Method and apparatus for controlling the titanium-aluminum ratio in titanium-aluminum thin films

Abstract

This application provides a method and apparatus for controlling the titanium-aluminum ratio in a titanium-aluminum thin film. The method includes: acquiring multiple sets of first historical data, including the titanium-aluminum ratio of titanium-aluminum thin films formed under different argon flow rates; obtaining a first variation relationship between the argon flow rate and the titanium-aluminum ratio based on the titanium-aluminum ratio corresponding to the multiple sets of argon flow rates; obtaining a target argon flow rate based on the first variation relationship and a target titanium-aluminum ratio; and adjusting the argon flow rate to the target argon flow rate to adjust the titanium-aluminum ratio in the formed titanium-aluminum thin film accordingly. Based on the method provided in this application, the Ti / Al ratio can be controlled, allowing the Ti / Al ratio in the TiAl thin film to be maintained.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method and apparatus for controlling the titanium-aluminum ratio in a titanium-aluminum thin film. Background Technology

[0002] In the field of semiconductor technology, the desired film layer is typically deposited on a substrate using deposition equipment. For example, when depositing a titanium-aluminum thin film, the substrate is placed in a process chamber, and a titanium-aluminum thin film with a corresponding Ti / Al ratio is deposited on the substrate based on the Ti / Al ratio in the titanium-aluminum target (TiAl target). However, in actual production, as the usage time of the titanium-aluminum target increases, the Ti / Al ratio of the formed TiAl thin film gradually decreases linearly. Summary of the Invention

[0003] In a first aspect, this application provides a method for controlling the titanium-aluminum ratio in a titanium-aluminum thin film, comprising:

[0004] Obtain multiple sets of first historical data, including the titanium-aluminum ratio of the titanium-aluminum thin films formed under different argon flow rates;

[0005] Based on the titanium-aluminum ratio corresponding to multiple sets of argon flow rate values, the first relationship between the argon flow rate value and the titanium-aluminum ratio is obtained.

[0006] Based on the first variation relationship and the target titanium-aluminum ratio, the target argon flow rate value is obtained; and,

[0007] The argon flow rate is adjusted to the target argon flow rate to adjust the titanium-aluminum ratio in the formed titanium-aluminum film accordingly.

[0008] In one possible implementation, the first variation relationship is a linear relationship, and the method for obtaining the target argon flow rate value based on the first variation relationship and the target titanium-aluminum ratio includes:

[0009] Obtain the first slope of the first change relationship; and,

[0010] The target argon flow rate is determined based on the first slope and the target titanium-aluminum ratio.

[0011] In one possible implementation, the method for determining the target argon flow rate value based on the first slope and the target titanium-aluminum ratio includes:

[0012] Obtain any set of first historical data, including historical argon flow rate values ​​and corresponding historical titanium-aluminum ratios; and,

[0013] The target argon flow rate is obtained based on the first slope, the difference between the historical titanium-aluminum ratio and the target titanium-aluminum ratio, and the historical argon flow rate.

[0014] Secondly, this application provides a method for preparing a titanium-aluminum thin film, including determining a target flow rate of argon gas using the control method described above, so as to adjust the titanium-aluminum ratio in the formed titanium-aluminum thin film accordingly.

[0015] In one possible implementation, after obtaining the target argon flow rate value, the method further includes:

[0016] Acquire multiple sets of second historical data, including thin film deposition rates corresponding to different argon flow rates;

[0017] Based on the thin film deposition rate corresponding to multiple sets of argon flow rate values, a second relationship between the thin film deposition rate and the argon flow rate value is obtained.

[0018] Based on the target argon flow rate, the second variation relationship, and the target thickness of the expected titanium-aluminum thin film, the target deposition time is obtained; and,

[0019] Based on the target argon flow rate and the target deposition time, a titanium-aluminum thin film of the target thickness is deposited on the target wafer.

[0020] In one possible implementation, the second variation relationship is a linear relationship. A method for obtaining the target deposition time based on the target argon flow rate, the second variation relationship, and the target thickness of the expected titanium-aluminum film includes:

[0021] Obtain the second slope of the second change relationship;

[0022] Based on the second slope and the target argon flow rate, the corresponding target deposition rate is determined; and,

[0023] The target deposition time is determined based on the target deposition rate corresponding to the target thickness and the target argon flow rate.

[0024] In one possible implementation, the second variation relationship is linear, and the target deposition time is obtained according to the following formula:

[0025]

[0026] Where T0 is the target deposition time;

[0027] T1 represents the historical deposition time in the second historical data;

[0028] THK0 is the target thickness;

[0029] THK1 represents the historical thickness in the second historical data;

[0030] AR0 represents the target argon flow rate.

[0031] AR1 represents the historical argon flow rate value from the second historical data.

[0032] K2 is the second slope of the second change relationship.

[0033] In one possible implementation, the target flow rate of argon gas is determined using the control method described in any one of claims 1-6, so as to adjust the titanium-aluminum ratio in the formed titanium-aluminum thin film accordingly.

[0034] Thirdly, this application provides a device for controlling the titanium-aluminum ratio in a titanium-aluminum thin film, comprising:

[0035] The acquisition module is used to acquire multiple sets of first historical data, including the titanium-aluminum ratio of the titanium-aluminum thin film formed under different argon flow rates;

[0036] The processing module is configured to obtain a first relationship between argon flow rate and titanium-aluminum ratio based on the titanium-aluminum ratio corresponding to multiple sets of argon flow rate values, and to obtain a target argon flow rate value based on the first relationship and the target titanium-aluminum ratio; and,

[0037] An adjustment module is used to adjust the argon flow rate to the target argon flow rate. In one possible implementation, the acquisition module is further used to acquire multiple sets of second historical data, including thin film deposition rates corresponding to different argon flow rates;

[0038] The processing module is further configured to obtain a second relationship between the thin film deposition rate and the argon flow rate based on the thin film deposition rate corresponding to multiple sets of argon flow rate values, and to obtain a target deposition time based on the target argon flow rate value, the second relationship, and the target thickness of the expected titanium-aluminum thin film; and,

[0039] The adjustment module is also used to adjust the deposition time to the target deposition time.

[0040] Fourthly, this application provides an electronic device, including: a memory and a processor;

[0041] The memory stores computer-executed instructions;

[0042] The processor executes computer execution instructions stored in the memory, causing the processor to perform the method described above.

[0043] Fifthly, this application provides a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, are used to implement the method described above. Attached Figure Description

[0044] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0045] Figure 1 This is a schematic diagram illustrating the deposition of titanium-aluminum thin films on a wafer using a deposition equipment.

[0046] Figure 2 This is a schematic diagram illustrating the variation of the Ti / Al ratio as an example.

[0047] Figure 3 A schematic diagram illustrating the variation of the Ti / Al ratio across different kits cycles;

[0048] Figure 4 A flowchart illustrating the method for controlling the titanium-aluminum ratio in the titanium-aluminum thin film provided in this application;

[0049] Figure 5 This is a schematic diagram illustrating the first variation relationship between the Ti / Al ratio and the Ar flow rate value as an example.

[0050] Figure 6 A flowchart illustrating a method for obtaining a target argon flow rate value in the control method provided in this application;

[0051] Figure 7 This is a flowchart illustrating the method for obtaining the target argon flow rate value based on historical data in an embodiment of this application.

[0052] Figure 8 This is an example of obtaining the target argon flow rate value based on historical data;

[0053] Figure 9 A schematic flowchart of the method for forming a titanium-aluminum thin film of a target thickness based on a target deposition time in the preparation method of titanium-aluminum thin film provided in this application;

[0054] Figure 10 A schematic diagram illustrating the second variation relationship between thin film deposition rate and argon flow rate as an example;

[0055] Figure 11 A schematic flowchart illustrating the method for obtaining the target deposition time in the preparation method of the titanium-aluminum thin film provided in this application;

[0056] Figure 12 A schematic diagram of the structure of the device for controlling the titanium-aluminum ratio in the titanium-aluminum thin film provided in this application;

[0057] Figure 13 A schematic diagram of the structure of the electronic device provided in this application.

[0058] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0059] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application.

[0060] Figure 1 This is a schematic diagram of a scenario where a titanium aluminum thin film is deposited on a wafer using a deposition equipment. As described in the background art, when titanium aluminum (TiAl) thin films are deposited using titanium aluminum targets, the Ti / Al ratio of the formed TiAl thin film gradually decreases linearly with the increase of the usage time of the titanium aluminum (TiAl) target.

[0061] For example, you can refer to Figure 1 As shown, TiAl thin films can be deposited on a substrate using a deposition equipment. Figure 2 This is a schematic diagram illustrating the change in the Ti / Al ratio, as shown in the example. Figure 2 As shown, during the use of the same TiAl target, the Ti / Al ratio of the formed TiAl film gradually decreases linearly with the increase of the usage time.

[0062] One approach is to interrupt the continuous decrease in the Ti / Al ratio by increasing the replacement frequency of protective kits during the use of the same TiAl target. However, this still cannot completely prevent the problem of the continuous decrease in the Ti / Al ratio.

[0063] Figure 3 This is a schematic diagram illustrating the variation of the Ti / Al ratio within different kits cycles, as shown below. Figure 3 As shown, within the same kit's usage period, the Ti / Al ratio of the film formed when the kit is first put into use is relatively high. However, as the kit's usage time increases, the Ti / Al ratio in the TiAl film continues to decrease.

[0064] In the field of semiconductor technology, TiAl thin films are deposited and used as the work function layer of transistor devices to regulate the threshold voltage of the transistors. When the Ti / Al ratio in the TiAl thin film drifts, it leads to a deviation in the threshold voltage of the transistor device. Therefore, stabilizing the Ti / Al ratio in the TiAl thin film is a pressing problem to be solved in this field.

[0065] In response, this application provides a method for controlling the titanium-aluminum ratio in a titanium-aluminum thin film, comprising: obtaining multiple sets of different argon (Ar) flow rates and the corresponding Ti / Al ratio of the formed Ti / Al thin film to obtain a first variation relationship between the Ti / Al ratio and the Ar flow rate; obtaining a target Ar flow rate value based on the target Ar flow rate value and the first variation relationship; and adjusting the Ar flow rate value in the process chamber to the target Ar flow rate value so that the process chamber deposits a TiAl thin film with a target Ti / Al ratio on a target wafer based on the target Ar flow rate value.

[0066] This application achieves control over the Ti / Al ratio by adjusting the Ar flow rate in the process chamber, thereby depositing a TiAl thin film with a target Ti / Al ratio on the target wafer. This allows the Ti / Al ratio in the TiAl thin film to be maintained, extending the maintenance cycle life of the process chamber, reducing the number of kit maintenance cycles, and improving the uptime of the deposition equipment. When the TiAl thin film is used as the work function layer of an N-type metal-oxide-semiconductor (NMOS), it can improve the stability of the NMOS threshold voltage.

[0067] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0068] Figure 4 This is a flowchart illustrating the method for controlling the titanium-aluminum ratio in the titanium-aluminum thin film provided in this application, as shown below. Figure 4 As shown, the control method includes the following steps.

[0069] S401. Obtain multiple sets of first historical data, including the titanium-aluminum ratio of the titanium-aluminum thin film formed under different argon flow rates.

[0070] In some examples, when depositing TiAl thin films on wafers, for example, when processing is done in batches of wafers, the wafers that have already been processed can be used as historical wafers. The Ar flow rate value corresponding to the historical wafer during the processing and the Ti / Al ratio in the TiAl thin film formed on the historical wafer are used as a set of corresponding first historical data.

[0071] S402. Based on the titanium-aluminum ratio corresponding to multiple sets of argon flow rate values, obtain the first relationship between the argon flow rate value and the titanium-aluminum ratio.

[0072] In some examples, the wafer is placed in a process chamber, and argon (Ar) gas is introduced into the process chamber for TiAl film deposition. Based on first-historical data, the inventors discovered that the Ar flow rate affects the Ti / Al ratio of the TiAl film deposited on the wafer. Figure 5 This is a schematic diagram illustrating the first variation relationship between the Ti / Al ratio and the Ar flow rate, as shown in the example. Figure 5 As shown, the Ti / Al ratio in the TiAl film deposited on the wafer increases as the Ar flow rate decreases. Therefore, the Ti / Al ratio of the deposited TiAl film can be controlled by adjusting the Ar flow rate.

[0073] S403. Based on the first change relationship and the target titanium-aluminum ratio, the target argon flow rate value is obtained.

[0074] For example, it can be based on Figure 5 The first variation relationship shown yields the target argon flow rate corresponding to the target Ti / Al ratio.

[0075] In some examples, the target Ti / Al ratio can be a preset value, such as 0.4 to 0.7. Taking NMOS devices as an example, when the Ti / Al ratio of the TiAl thin film is controlled within the range of 0.4 to 0.7, the threshold voltage of the corresponding NMOS device can be maintained within a stable range, thereby ensuring the stable performance of the NMOS.

[0076] S404. Adjust the argon flow rate to the target argon flow rate to adjust the titanium-aluminum ratio in the formed titanium-aluminum film accordingly.

[0077] In other words, by adjusting the Ar flow rate into the process chamber to the target Ar flow rate, the Ti / Al ratio of the deposited TiAl film can be the preset target Ti / Al ratio.

[0078] Based on the method provided in this example, the Ti / Al ratio can be controlled by adjusting the Ar flow rate in the process chamber, thereby maintaining the Ti / Al ratio in the TiAl film. This can extend the maintenance cycle life of the process chamber, reduce the number of kit maintenance cycles, and improve the uptime of the deposition equipment. When the TiAl film is used as the work function layer of NMOS, it can improve the stability of the NMOS threshold voltage.

[0079] Optional, Figure 6 This is a flowchart illustrating a method for obtaining a target argon flow rate value in the control method provided in this application. As described above, in one example, the first relationship between the argon flow rate value and the titanium-aluminum ratio is linear. Based on this, as... Figure 6 As shown, the method for obtaining the target argon flow rate value may include the following steps.

[0080] S601, Obtain the first slope of the first change relationship.

[0081] The first slope can be calculated by comparing the change in Ar flow rate with the corresponding change in Ti / Al ratio. The magnitude of the first slope is obtained based on the correspondence between the actual measured Ar flow rate and the Ti / Al ratio in the TiAl film. For example, the obtained first slope is kept in the range of -500 to -650 and can be denoted as K1.

[0082] S602. Determine the target argon flow rate based on the first slope and the target titanium-aluminum ratio.

[0083] Optional, see reference Figure 7 As shown, S602 includes S701 and S702.

[0084] S701. Obtain any set of first historical data, including historical argon flow rate and corresponding historical titanium-aluminum ratio.

[0085] In one example, from multiple sets of first historical data obtained, one set of first historical data is arbitrarily selected. The selected first historical data includes historical Ar flow values ​​and corresponding historical Ti / Al ratios.

[0086] S702. The target argon flow rate is obtained based on the first slope, the difference between the historical titanium-aluminum ratio and the target titanium-aluminum ratio, and the historical argon flow rate.

[0087] In one example, Figure 8 This is an example of obtaining the target argon flow rate value based on historical data, as shown in the diagram. Figure 8As shown, if the Ar flow rate and Ti / Al ratio at point a are the historical Ar flow rate and historical Ti / Al ratio, respectively, and the Ar flow rate and Ti / Al ratio at point b are the target Ar flow rate and target Ti / Al ratio, respectively, then the target Ti / Al ratio is a preset value. Therefore, the corresponding Ti / Al change ΔTi / Al can be obtained based on the historical Ti / Al ratio and the target Ti / Al ratio. Multiplying ΔTi / Al by the first slope yields the Ar flow rate change ΔAr. The target Ar flow rate can be obtained by adding ΔAr to the historical Ar flow rate value.

[0088] Specifically, the target Ar flow rate can be obtained using the following formula:

[0089] AR0 = AR1 + K1*(RT1 - RT0)

[0090] If we denote the historical Ti / Al ratio as RT1 and the target Ti / Al ratio as RT0, then the difference between the historical Ti / Al ratio and the target Ti / Al ratio can be RT1 - RT0, which gives us ΔTi / Al. Multiplying ΔTi / Al by the first product gives K1*(RT1 - RT0), which gives us ΔAr. If we denote the historical Ar flow rate as AR1 and the target Ar flow rate as AR0, then adding AR1 to ΔAr gives us AR0. Based on the method provided in this example, the target Ar flow rate corresponding to the target Ti / Al ratio can be accurately obtained using the above formula.

[0091] This disclosure also provides a method for preparing a titanium-aluminum thin film, which can adjust the titanium-aluminum ratio in the deposited titanium-aluminum thin film using the control method described above.

[0092] A further proposed solution, after obtaining the target argon flow rate, also includes: acquiring the deposition time corresponding to the desired titanium-aluminum film thickness, in order to form a titanium-aluminum film of the expected thickness. (See reference...) Figure 9 As shown, a method for obtaining a target deposition time to form a titanium-aluminum thin film of the desired thickness may include the following steps.

[0093] S901. Obtain multiple sets of second historical data, including the thin film deposition rate corresponding to different argon flow rates.

[0094] In some examples, the Ar flow rate value corresponding to the fabrication process of the historical wafer and the film deposition rate of the TiAl thin film formed on the historical wafer are used as a set of corresponding second historical data.

[0095] S902. Based on the thin film deposition rate corresponding to multiple sets of argon flow rate values, a second relationship between the thin film deposition rate and the argon flow rate value is obtained.

[0096] In some examples, Figure 10 A schematic diagram illustrating the second variation relationship between thin film deposition rate and argon flow rate, as shown below. Figure 10 As shown, the deposition rate decreases with increasing Ar flow rate.

[0097] S903. Based on the target argon flow rate, the second variation relationship, and the target thickness of the expected titanium-aluminum thin film, the target deposition time is obtained.

[0098] In some examples, based on the target Ar flow rate value obtained above and the second variation relationship, the target rate corresponding to the target Ar flow rate value can be obtained. By comparing the target thickness of the expected titanium-aluminum thin film with the target rate, the corresponding target deposition time can be obtained.

[0099] S904. Based on the target argon flow rate and the target deposition time, deposit a titanium-aluminum thin film of the target thickness on the target wafer.

[0100] In some examples, the deposition time is adjusted to the target deposition time to deposit the target deposition time under the environment of the target Ar flow rate, thereby enabling the deposition of a TiAl film of the target thickness on the target wafer.

[0101] Figure 11 This is a schematic flowchart illustrating the method for obtaining the target deposition time in the preparation method of the titanium-aluminum thin film provided in this application. Figure 11 In the example, the second change relationship is a linear relationship, such as... Figure 11 As shown, the method for obtaining the target deposition time includes the following steps.

[0102] S1101, Obtain the second slope of the second change relationship.

[0103] In some examples, the second slope is the ratio of the change in deposition rate ΔV to the change in Ar flow rate ΔAr, and can be denoted as K2. Alternatively, the second slope can be obtained through linear fitting.

[0104] S1102. Determine the corresponding target deposition rate based on the second slope and the target argon flow rate.

[0105] S1103. Determine the target deposition time based on the target thickness and the target argon flow rate corresponding to the target deposition rate.

[0106] In some examples, the target thickness of the TiAl film can be a preset value, and the ratio of the preset target thickness to the obtained target deposition time yields the corresponding target deposition time. Based on the method provided in this example, the required deposition time at the target deposition rate can be accurately obtained through the second slope between the film deposition rate and the Ar flow rate.

[0107] Optionally, the target deposition time can also be obtained by combining historical data, for example, it can be obtained according to the following formula:

[0108]

[0109] Where T0 is the target deposition time;

[0110] T1 represents the historical deposition time in the second historical data;

[0111] THK0 is the target thickness;

[0112] THK1 represents the historical thickness in the second historical data;

[0113] AR0 represents the target argon flow rate.

[0114] AR1 represents the historical argon flow rate value from the second historical data.

[0115] K2 is the second slope of the second change relationship.

[0116] In some examples, one set of second historical data can be selected from the multiple sets mentioned above. This second historical data may include, for example, historical argon flow rate values, historical TiAl film thickness, and historical deposition time. The historical thickness can be denoted as THK1 (THK stands for Thickness), the historical deposition time as T1, and the historical argon flow rate value as AR1. The target thickness THK0 of the TiAl film can be a preset value, representing the target thickness of the TiAl film deposited on the target wafer. Based on the historical argon flow rate value AR1 and the target argon flow rate value AR0, the change in argon flow rate value (AR1-AR0) can be obtained.

[0117] Optionally, the target thickness of the TiAl thin film is The second slope is, for example, -0.01 to -0.02.

[0118] The DC voltage power used in the process cavity is, for example, 1000W to 2000W, and the radio frequency power is, for example, 2000W to 4500W.

[0119] Figure 12 This is a schematic diagram of the structure of the device for controlling the titanium-aluminum ratio in the titanium-aluminum thin film provided in this application, as shown below. Figure 12 As shown, it includes:

[0120] The acquisition module 121 is used to acquire multiple sets of first historical data, including the titanium-aluminum ratio of the titanium-aluminum thin film formed under different argon flow rates.

[0121] Processing module 122 is configured to obtain a first relationship between argon flow rate and titanium-aluminum ratio based on the titanium-aluminum ratio corresponding to multiple sets of argon flow rate values, and to obtain a target argon flow rate value based on the first relationship and the target titanium-aluminum ratio; and,

[0122] The adjustment module 123 is used to adjust the argon flow rate value to the target argon flow rate value.

[0123] Optionally, the acquisition module 131 is further configured to acquire multiple sets of second historical data, including thin film deposition rates corresponding to different argon flow rates; the processing module 132 is further configured to obtain a second variation relationship between the thin film deposition rate and the argon flow rate based on the thin film deposition rates corresponding to the multiple sets of argon flow rates, and to obtain a target deposition time based on the target argon flow rate, the second variation relationship and the target thickness of the expected titanium-aluminum thin film; and the adjustment module 133 is further configured to adjust the deposition time to the target deposition time.

[0124] The control device provided in this embodiment can execute the method provided in the above method embodiment. Its implementation principle and technical effect are similar, and will not be described in detail here.

[0125] Figure 13 A schematic diagram of the structure of the electronic device provided in this application. Figure 13 As shown, the electronic device 50 provided in this embodiment includes at least one processor 501 and a memory 502. Optionally, the device 50 further includes a communication component 503. The processor 501, memory 502, and communication component 503 are connected via a bus 504.

[0126] In a specific implementation, at least one processor 501 executes computer execution instructions stored in memory 502, causing at least one processor 501 to perform the above-described method.

[0127] The specific implementation process of processor 501 can be found in the above method embodiments, and its implementation principle and technical effect are similar. It will not be repeated here.

[0128] In the above embodiments, it should be understood that the processor can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), etc. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the method disclosed in this invention can be directly implemented by a hardware processor, or implemented by a combination of hardware and software modules within the processor.

[0129] The memory may include random access memory (RAM) and may also include non-volatile memory (NVM), such as at least one disk storage device.

[0130] The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. Buses can be categorized as address buses, data buses, control buses, etc. For ease of illustration, the buses shown in the accompanying drawings are not limited to a single bus or a single type of bus.

[0131] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described method.

[0132] This application also provides a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, implement the above-described method.

[0133] The aforementioned readable storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk. The readable storage medium can be any available medium accessible to a general-purpose or special-purpose computer.

[0134] An exemplary readable storage medium is coupled to a processor, enabling the processor to read information from and write information to the readable storage medium. Of course, the readable storage medium can also be a component of the processor. The processor and the readable storage medium can reside in an Application Specific Integrated Circuit (ASIC). Alternatively, the processor and the readable storage medium can exist as discrete components in the device.

[0135] The division of units is merely a logical functional division; in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces, devices, or units, and may be electrical, mechanical, or other forms.

[0136] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0137] In addition, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0138] If a function is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this invention, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0139] Those skilled in the art will understand that all or part of the steps of the above-described method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When executed, the program performs the steps of the above-described method embodiments; and the aforementioned storage medium includes various media capable of storing program code, such as ROM, RAM, magnetic disks, or optical disks.

[0140] Finally, it should be noted that other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein, and is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.

Claims

1. A method for controlling the titanium-aluminum ratio in a titanium-aluminum thin film, characterized in that, include: Obtain multiple sets of first historical data, including the titanium-aluminum ratio of the titanium-aluminum thin films formed under different argon flow rates; Based on the titanium-aluminum ratio corresponding to multiple sets of argon flow rate values, the first relationship between the argon flow rate value and the titanium-aluminum ratio is obtained. Based on the first change relationship and the target titanium-aluminum ratio, the target argon flow rate value is obtained; as well as, The argon flow rate is adjusted to the target argon flow rate to adjust the titanium-aluminum ratio in the formed titanium-aluminum film accordingly.

2. The control method according to claim 1, characterized by, The first relationship is linear. Based on the first relationship and the target titanium-aluminum ratio, the method for obtaining the target argon flow rate value includes: Obtain the first slope of the first change relationship; and, The target argon flow rate is determined based on the first slope and the target titanium-aluminum ratio.

3. The control method according to claim 2, characterized by, The method for determining the target argon flow rate value based on the first slope and the target titanium-aluminum ratio includes: Obtain any set of first historical data, including historical argon flow rate values ​​and corresponding historical titanium-aluminum ratios; and, The target argon flow rate is obtained based on the first slope, the difference between the historical titanium-aluminum ratio and the target titanium-aluminum ratio, and the historical argon flow rate.

4. A method for producing a titanium aluminum thin film, characterized by, include: The target flow rate of argon gas is determined using the control method described in any one of claims 1-3, so as to adjust the titanium-aluminum ratio in the formed titanium-aluminum thin film accordingly.

5. The preparation method according to claim 4, characterized in that, After obtaining the target argon flow rate, the following is also included: Acquire multiple sets of second historical data, including thin film deposition rates corresponding to different argon flow rates; Based on the thin film deposition rate corresponding to multiple sets of argon flow rate values, a second relationship between the thin film deposition rate and the argon flow rate value is obtained. Based on the target argon flow rate, the second variation relationship, and the target thickness of the expected titanium-aluminum thin film, the target deposition time is obtained; and, Based on the target argon flow rate and the target deposition time, a titanium-aluminum thin film of the target thickness is deposited on the target wafer.

6. The preparation method according to claim 5, characterized in that, The second variation relationship is linear. A method for obtaining the target deposition time based on the target argon flow rate, the second variation relationship, and the expected target thickness of the titanium-aluminum thin film includes: Obtain the second slope of the second change relationship; Based on the second slope and the target argon flow rate, the corresponding target deposition rate is determined; and, The target deposition time is determined based on the target deposition rate corresponding to the target thickness and the target argon flow rate.

7. The preparation method according to claim 5, characterized in that, The second relationship is a linear relationship, and the target deposition time is obtained according to the following formula: Where T0 is the target deposition time; T1 represents the historical deposition time in the second historical data; THK0 is the target thickness; THK1 represents the historical thickness in the second historical data; AR0 represents the target argon flow rate. AR1 represents the historical argon flow rate value from the second historical data. K2 is the second slope of the second change relationship.

8. A device for controlling the ratio of titanium to aluminum in a titanium aluminum film, comprising: a titanium source; an aluminum source; a substrate; and a controller for controlling the ratio of titanium to aluminum in the film. include: The acquisition module is used to acquire multiple sets of first historical data, including the titanium-aluminum ratio of the titanium-aluminum thin film formed under different argon flow rates; The processing module is configured to obtain a first relationship between argon flow rate and titanium-aluminum ratio based on the titanium-aluminum ratio corresponding to multiple sets of argon flow rate values, and to obtain a target argon flow rate value based on the first relationship and the target titanium-aluminum ratio; and, The adjustment module is used to adjust the argon flow rate to the target argon flow rate.

9. The control device of claim 8, wherein The acquisition module is also used to acquire multiple sets of second historical data, including thin film deposition rates corresponding to different argon flow rates. The processing module is further configured to obtain a second relationship between the thin film deposition rate and the argon flow rate based on the thin film deposition rate corresponding to multiple sets of argon flow rate values, and to obtain a target deposition time based on the target argon flow rate value, the second relationship, and the target thickness of the expected titanium-aluminum thin film; and, The adjustment module is also used to adjust the deposition time to the target deposition time.

10. A thin film deposition apparatus comprising: The control device as described in claim 8 or 9.

11. A computer device, comprising: include: Memory and processor; The memory stores computer-executed instructions; The processor executes computer execution instructions stored in the memory, causing the processor to perform the method as described in any one of claims 1-7.

12. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which, when executed by a processor, are used to implement the method as described in any one of claims 1-7.

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