Reactor system with porous lift pins

Abstract

A reactor system can include a reaction chamber; and / or a pedestal disposed in the reaction chamber between an upper chamber and a lower chamber of the reaction chamber. The pedestal can include a substrate support surface; and / or a fluid path fluidically connecting the upper chamber and the lower chamber disposed through the pedestal and the substrate support surface. The lower chamber can include a lower chamber pressure greater than an upper chamber pressure of the upper chamber such that fluid flows from the lower chamber through the fluid path into the upper chamber. The pedestal can further include a pin hole disposed through the pedestal, and a lift pin can be disposed in the pin hole. The lift pin can include a porous material and / or a pin channel, the pin channel including a fluid path such that fluid flows through the lift pin.

Description

Technical Field

[0001] This disclosure generally relates to semiconductor processing or reactor systems, and more particularly to semiconductor reactor systems and components included therein, which prevent material deposition on undesired locations, such as reactor systems and / or substrates. Background Technology

[0002] A reaction chamber can be used to deposit various material layers onto a substrate. The substrate can be placed on a pedestal within the reaction chamber. Both the substrate and the pedestal can be heated to a desired substrate temperature setpoint. In an example substrate processing step, one or more reactant gases can pass over the heated substrate, causing a thin film of material to be deposited on the substrate surface. These layers can be fabricated into integrated circuits in subsequent deposition, doping, photolithography, etching, and other processes.

[0003] During operation of the reactor system, undesirable contaminants can accumulate on and / or the underside of the coated substrate (i.e., the surface of the substrate near the base) and / or the edges of the substrate. Therefore, devices and methods are desired to prevent deposition or contamination on the underside and / or edges of the substrate. Summary of the Invention

[0004] This synopsis is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the following detailed description of examples of this disclosure. This synopsis is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0005] In various examples, a reactor system is provided. In various examples, a reactor system may include: a reaction chamber; a base disposed within the reaction chamber, wherein the base is positioned between an upper chamber and a lower chamber included in the reaction chamber, wherein the base may include a pin hole disposed through the base such that the pin hole is in fluid communication with the upper and lower chambers, and allows fluid communication between the upper and lower chambers; and / or a lifting pin disposed in the pin hole. The lifting pin may include a pin body. The pin body may include a porous material configured to allow fluid to flow through the lifting pin between the upper and lower chambers. The upper chamber may be substantially fluid-tightly isolated from the lower chamber except through the pin hole in which the lifting pin is disposed. The lower chamber may include a lower chamber inlet through which fluid flows into the lower chamber. The lower chamber may include a lower chamber pressure, and the upper chamber may include an upper chamber pressure, wherein the lower chamber pressure may be greater than the upper chamber pressure, such that fluid flows from the lower chamber through the porous material in the lifting pin into the upper chamber. The porous material may include a sintered material.

[0006] The pin body may also include a solid portion surrounding a porous material. The solid portion of the pin body may be a solid sleeve. The porous material may be disposed within the solid sleeve. The lifting pin may include a pin head at the top of the pin body, wherein the pin head may include porous material. The pin head may be at least partially disposed within a pin hole in the base.

[0007] In various examples, the base may include a support surface configured to support a substrate. The support surface may include a base channel recessed into the base, which leads to the support surface and is in fluid communication with a pin hole. The base channel in the base may be configured to allow fluid to flow from the pin hole and through the base channel when the substrate is positioned on the support surface, such that the fluid flows beneath the substrate and is configured to purge contaminants from beneath the substrate.

[0008] In various examples, a lifting pin configured to be disposed in a base included in a reactor system may include a pin body comprising a porous material. The porous material may be configured to allow fluid flow through at least a portion of the pin length. The porous material may include a sintered material. The pin body may also include a solid portion surrounding the porous material. The solid portion of the pin body may be a solid sleeve in which the porous material may be disposed.

[0009] In various examples, a reactor system may include a reaction chamber; and / or a base disposed within the reaction chamber. The base may be disposed between an upper chamber and a lower chamber included in the reaction chamber. The base may include: a support surface configured to support a substrate; and / or a fluid path disposed through the base and the support surface. The fluid path may fluidly connect the upper and lower chambers. The lower chamber may include a lower chamber pressure, and the upper chamber may include an upper chamber pressure. The lower chamber pressure may be greater than the upper chamber pressure, causing fluid to flow from the lower chamber through the fluid path into the upper chamber. The base may also include a base channel recessed into the base through the support surface, leading to the support surface and fluidly connected to the fluid path. The base may also include a pin hole disposed through the base. The reactor system may also include a lifting pin disposed in the pin hole. The lifting pin may include a fluid path, allowing fluid to flow through the lifting pin. The lifting pin may include a porous material. The porous material may include the fluid path. The porous material may include a sintered material. The pin body may also include a solid portion surrounding the porous material.

[0010] For the purpose of outlining this disclosure and the advantages achieved relative to the prior art, certain objects and advantages of this disclosure have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular example of this disclosure. Therefore, for example, those skilled in the art will recognize that the examples disclosed herein may be implemented in a way that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0011] All these examples are intended to fall within the scope of this disclosure. These and other examples will become apparent to those skilled in the art from the following detailed description of some examples with reference to the accompanying drawings, and this disclosure is not limited to any particular example discussed. Attached Figure Description

[0012] Although the specification concludes with claims, which specifically point out and explicitly claim protection for examples considered to be of this disclosure, the advantages of the examples of this disclosure can be more readily determined from the description of certain examples when read in conjunction with the accompanying drawings. Elements having the same element number throughout the drawings are intended to be identical.

[0013] Figure 1 These are schematic diagrams of exemplary reactor systems based on various examples.

[0014] Figure 2A This is a schematic diagram of an exemplary reaction chamber having a base positioned at the lower part, according to various examples.

[0015] Figure 2B This is a schematic diagram of an exemplary reaction chamber having a base positioned in an elevated position, according to various examples.

[0016] Figure 3 This is a schematic diagram of another exemplary reaction chamber based on various examples.

[0017] Figure 4 A side view of the lifting pin is shown according to various examples.

[0018] Figure 5A A cross-sectional view of a portion of a lifting pin used in a reactor system, according to various examples, is shown.

[0019] Figure 5B A portion of a lifting pin for a reactor system is shown, according to various examples.

[0020] Figure 5C A cross-sectional view of the top of a lifting pin for a reactor system is shown, according to various examples.

[0021] Figure 6A A cross-sectional top view of a lifting pin for a reactor system comprising porous materials, according to various examples, is shown.

[0022] Figure 6B A cross-sectional perspective top view of lifting pins for reactor systems incorporating porous materials, according to various examples, is shown.

[0023] Figure 7 A cross-sectional perspective top view of another lifting pin for a reactor system including porous materials, according to various examples, is shown.

[0024] Figure 8 A cross-sectional perspective top view of another lifting pin for a reactor system including porous materials, according to various examples, is shown.

[0025] Figure 9 Exemplary porous materials with various media types and / or grades are shown according to various examples.

[0026] Figure 10 Methods for processing substrates in a reactor system are illustrated according to various examples. Detailed Implementation

[0027] The descriptions of the methods, structures, apparatuses, and systems provided below are merely exemplary and intended for illustrative purposes only. The following descriptions are not intended to limit the scope of this disclosure or the claims. Furthermore, the recitation of multiple examples having the described features is not intended to exclude other examples having additional features or other examples comprising different combinations of the described features. For example, various examples are set forth as embodiments and may be recited in the dependent claims. Unless otherwise stated, examples or components thereof may be combined or may be applied separately from each other. Methods may include the disclosed steps in any suitable and / or desired order or combination.

[0028] As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Unless otherwise stated, expressions such as “at least one of…” modify the entire column of elements when following an element in the column, and not necessarily any individual element in that column.

[0029] As used herein, the terms “comprising,” “including,” and variations thereof specify the presence of the stated feature, integer, step, process, component, and / or group thereof, but do not exclude the presence or addition of one or more other features, integers, steps, processes, components, and / or groups thereof. In this disclosure, the meaning of any definition does not necessarily exclude the common and customary meaning in some examples.

[0030] As used herein, the term “substrate” can refer to any one or more underlying materials on which devices, circuits or films can be formed.

[0031] As used herein, the term "atomic layer deposition" (ALD) can refer to a vapor-phase deposition process in which deposition cycles are performed in a processing chamber. Typically, during each cycle, a precursor is chemisorbed onto the deposition surface (e.g., a substrate surface or a previously deposited lower layer surface, such as material from a previous ALD cycle), forming a monolayer or sub-monolayer that is not readily reactive with another precursor (i.e., a self-limiting reaction). Subsequently, if desired, a reactant (e.g., another precursor or reactive gas) can be introduced into the processing chamber to convert the chemisorbed precursor into the desired material on the deposition surface. Typically, this reactant is capable of further reacting with the precursor. Furthermore, a purging step can be used during each cycle to remove excess precursor from the processing chamber and / or excess reactant and / or reaction byproducts from the processing chamber after the conversion of the chemisorbed precursor. Furthermore, as used herein, the term “atomic layer deposition” is also intended to include processes specified by related terms such as “chemical vapor deposition,” “atomic layer epitaxy” (ALE), molecular beam epitaxy (MBE), gas-source MBE or organometallic MBE, and chemical beam epitaxy when performed with alternating pulses of a precursor composition, a reactive gas, and a purge gas (e.g., an inert carrier gas).

[0032] As used herein, the term “chemical vapor deposition” can refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposition.

[0033] As used herein, the terms “membrane” and “thin film” can refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, “membrane” and “thin film” can include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and / or molecular clusters. “Membrane” and “thin film” can include materials or layers with pinholes, but still at least partially continuous.

[0034] As used herein, the term "contaminant" can refer to any unwanted material disposed within the reaction chamber that can affect the purity of the substrate disposed within the reaction chamber. The term "contaminant" can refer to, but is not limited to, unwanted deposits, metallic and non-metallic particles, impurities, and waste products disposed within the reaction chamber.

[0035] Reactor systems for ALD, CVD, etc., can be used in a variety of applications, including depositing and etching materials on substrate surfaces. In various examples, reactor system 50 may include a reaction chamber 4, a base 6 holding the substrate 30 during processing, a fluid distribution system 8 (e.g., spray nozzles) for distributing one or more reactants to the surface of the substrate 30, one or more reactant sources 10, 12, and / or carrier gas and / or purge gas sources 14, fluidly coupled to the reaction chamber 4 via lines 16-20 and valves or controllers 22-26. System 50 may also include a vacuum source 28 fluidly coupled to the reaction chamber 4.

[0036] Go to Figure 2A and 2B Examples of this disclosure may include reactor systems and methods that can be used to process substrates within reactor 100. In various examples, reactor 100 may include a reaction chamber 110 for processing substrates. In various examples, reaction chamber 110 may include an upper chamber 112 (i.e., a reaction space) and / or a lower chamber 114 (i.e., a lower subchamber), the upper chamber being configured to process one or more substrates. Lower chamber 114 may be configured to load and unload substrates from and / or to provide a pressure differential between lower chamber 114 and upper chamber 112.

[0037] In various examples, the upper chamber 112 and the lower chamber 114 can be separated by a base 130 disposed within the reaction chamber 110. In various examples, the upper chamber 112 and the lower chamber 114 can be substantially fluidly separated or isolated from each other. For example, the base 130 can substantially fluidly separate the upper chamber 112 and the lower chamber 114 by creating at least a partial seal (i.e., at least restricting fluid flow) between the base 130 and the chamber sidewall 111 of the reaction chamber 110 disposed near the outer surface 132 of the base 130. That is, the space 108 between the base 130 and the chamber sidewall 111 can be minimized or eliminated, such that there is little or no fluid movement between the base 130 and the chamber sidewall 111 (i.e., a substantial seal therebetween).

[0038] In various examples, to prevent or reduce fluid flow between the base 130 and the chamber sidewall 111, one or more sealing members (e.g., sealing member 129) may extend from the base 130 (e.g., from the outer surface 132 of the base) and / or from the chamber sidewall 111 of the reaction chamber 110 to another, thereby forming at least a partial seal (i.e., restricting or preventing fluid flow) between the base 130 and the chamber sidewall 111. Thus, the upper chamber 112 and the lower chamber 114 can be substantially sealed and isolated from each other. At least a partial seal between the upper chamber 112 and the lower chamber 114 may be desirable to prevent or reduce the entry and / or contact of precursor gases and / or other fluids used to process the substrate 150 into and / or contact the lower chamber 114 of the reaction chamber 110. For example, the precursor gas used to process the substrate in the upper chamber may include a corrosive deposition precursor that can contact the lower chamber 114, generating unwanted deposits / contaminants / particles that can be reintroduced into the upper chamber 112, thereby providing a source of contamination for the substrate disposed in the upper chamber.

[0039] In various examples, although the sealing member 129 extending between the base 130 and the chamber sidewall 111 of the reaction chamber 110 and / or the at least partial seal formed by the direct contact between the base 130 and the chamber sidewall 111 of the reaction chamber 110 can limit or substantially prevent fluid communication between the upper chamber 112 and the lower chamber 114 through the space 108, a small amount of precursor gas may still diffuse into the lower chamber 114, which may result in possible corrosion, unwanted deposits and contaminants in the lower chamber of the reactor system's reaction chamber.

[0040] In various examples, the base 130 may include one or more pin holes 137. Each pin hole 137 may extend from the top surface of the base 130 (e.g., a substrate support surface 135 on which the substrate 150 may be disposed for processing) through the base 130 to the bottom surface 136 of the base 130. The top surface of the base (e.g., the substrate support surface 135) may be the surface of the base 130 adjacent to the upper chamber 112 of the reaction chamber 110. The bottom surface 136 of the base may be the surface of the base 130 adjacent to the lower chamber 114 of the reaction chamber 110. Without a lifting pin in the pin hole 137, the upper chamber 112 and the lower chamber 114 may be in fluid communication with each other through the pin hole 137. That is, the pin hole 137 may be in fluid communication with both the upper chamber 112 and the lower chamber 114.

[0041] See also the various examples. Figure 3Reactor 300 may include components similar to those in reactor 100, including a reaction chamber 310 for processing substrates. In various examples, reaction chamber 310 (similar to reaction chamber 110) may include an upper chamber 312 (similar to upper chamber 112) and / or a lower chamber 314 (similar to lower chamber 114), the upper chamber being configured to process one or more substrates. Lower chamber 314 may be configured to load and unload substrates from and / or to provide a pressure differential between lower chamber 314 and upper chamber 312.

[0042] In various examples, the upper chamber 312 and the lower chamber 314 can be separated by a base 330 (similar to base 130) disposed in the reaction chamber 310. In various examples, the upper chamber 312 and the lower chamber 314 can be substantially fluidly separated or isolated from each other. For example, the base 330, the flow control ring 370, and / or the spacer 390 can fluidly separate the upper chamber 312 from the lower chamber 314 by creating at least a partial seal (i.e., at least restricting fluid flow) between the upper chamber 312 and the lower chamber 314 (e.g., the upper chamber 312 can be substantially sealed and isolated from the lower chamber 314). The flow control ring 370 can be coupled to a wall of the reaction chamber 310, and the spacer can be coupled to the base 330 such that, in response to the base being raised (e.g., via a base lift 304), the flow control ring 370 can at least form a seal with the spacer 390. The flow control ring 370 can be directly abutted against the spacer 390 to create a seal, and / or a sealing device 340 (e.g., an O-ring, a spring, etc.) can be disposed between the flow control ring 370 and the spacer 390 to create a seal. Therefore, the upper chamber 312 and the lower chamber 314 can be fluid-separated.

[0043] The base 330 may include a substrate support surface 335 on which a substrate 350 may be supported. The substrate support surface 335 may include one or more base channels 334 recessed therein (the base channel 334 may be a continuous or multiple separate channels). The base channel 334 may be disposed in and / or recessed into the base 330 and open to the substrate support surface 335 (e.g., such that the base channel 334 closes in response to the substrate 350 being disposed on the substrate support surface 335). The base channel 334 may cause the ridges 333 between the base channels 334 to contact and support the substrate 350 disposed on the substrate support surface 335. Therefore, only a portion of the substrate support surface 335 below the substrate 350 may contact the substrate 350 (e.g., 1% to 20% or 30% of the area of ​​the substrate support surface 335 below the substrate 350 may contact the substrate 350). The base channel 334 allows the back side of the substrate 350 (the side facing the base 330) to be exposed to the base channel 334.

[0044] In various examples, the base 330 may include one or more pin holes 337 (similar to pin holes 137). Each pin hole 337 may extend from the top surface of the base 330 (e.g., a substrate support surface 335 on which the substrate 350 may be disposed for processing) through the base 330 to the bottom surface 336 of the base 330. The top surface of the base (e.g., substrate support surface 135) may be the surface of the base 330 adjacent to the upper chamber 312 of the reaction chamber 310. The bottom surface 336 of the base may be the surface of the base 330 adjacent to the lower chamber 314 of the reaction chamber 310. Without a lifting pin in the pin hole 337, the upper chamber 312 and the lower chamber 314 may be in fluid communication with each other through the pin hole 337. That is, the pin hole 337 may be in fluid communication with both the upper chamber 312 and the lower chamber 314. The base channel 334 in the base 330 may be in fluid communication with the pin hole 337.

[0045] Reactor 300 may include lifting pins 299 (or other similar objects) that can be disposed in each pin hole 337 (e.g. Figure 2A and 2B (The lifting pin 200 in pin hole 137). Also refer to... Figure 4 Lifting pin 400 ( Figure 2A and 2B The example of the lifting pin 200 depicted in the image, and Figure 3 The lifting pin 299 in the pin 400 may include a lifting pin body 450 configured to span at least a portion of the pin hole 337 when disposed in the pin hole 337. The pin body 450 may include a cross-sectional shape complementary to the cross-sectional shape of the pin hole 337 (in a cross-section taken perpendicular to the length of the pin body 450). The pin body 450 may be defined by an outer pin surface 470. When the lifting pin 400 is disposed in the pin hole 337, at least a portion of the outer pin surface 470 is disposed near the pin hole surface defining the pin hole 337. In various examples, the outer pin surface 470 may form at least a partial seal with the pin hole surface, such that little or no fluid (e.g., liquid or gas) may pass between the outer pin surface 470 and the contact pin hole surface 439. That is, a substantial seal may exist between the lifting pin 400 and the pin hole surface.

[0046] In various examples, the lifter pin 400 may include a pin tip 410 opposite the pin bottom end 490, with the pin body 450 (and pin length) spanning therebetween. The pin tip 410 of the lifter pin 400 may include a pin head 420. The pin head 420 may be any suitable shape compared to the pin body 450. In various examples, the pin head 420 may include a cross-sectional shape identical to the cross-sectional shape of the pin body 450 (in a cross-section taken perpendicular to the length of the pin body 450). In various examples, the pin head 420 may include a cross-sectional shape having a surface area larger or smaller than that of the pin body 450 (in a cross-section taken perpendicular to the length of the pin body 450).

[0047] In an example where the pin head 420 has a larger surface area than the cross-sectional shape of the pin body 450, the pin hole 337 where the lift pin 400 is disposed may include a pin head hole 338 having a cross-sectional shape complementary to the cross-sectional shape of the pin head 420. The pin head 420 may be defined by a pin head outer surface 422. When the lift pin 400 (e.g., the lifting pin 400) is disposed in the pin hole 337, the pin head outer surface 422 may be disposed adjacent to the pin hole surface defining the pin head hole 338. In various examples, the pin head outer surface 422 may form at least a partial seal with the pin hole surface of the pin head hole 338 (i.e., restricting fluid flow between the pin head 420 and the pin hole surface of the pin head hole 338), such that little or no fluid (e.g., liquid or gas) may pass between the pin head 420 and the pin head hole 338 of the pin hole 337.

[0048] In various examples, the pin tip 410 may be configured to contact the substrate 350 to move the substrate 350 relative to the base 330. For example, the lifting pin 400 may move the substrate 350 up or down relative to the base 330 (i.e., increase or decrease the space between the substrate 350 and the base 330).

[0049] Refer again Figure 2A and Figure 2B The substrate 150 and the base 130 can move relative to each other. For example, in various examples, one or more lifting pins 400 (or Figure 2A and 2BThe lifting pin 200 shown can be configured to allow the substrate 150 to separate from the base 130 and to allow the substrate 150 to be positioned in contact with (i.e., supported by) the base 130. In various examples, the base 130 can be moved up or down, for example via a base lift 104, such that the base 130 moves relative to the substrate 150. In various examples, the lifting pin 200 can be moved up or down, for example via a lifting pin lift / platform 202, such that the substrate 150 moves relative to the base 130. In various examples, the base 130 and / or the lifting pin 200 can be stationary while the other is moving. In various examples, the base 130 and / or the lifting pin 200 can be configured to move relative to each other.

[0050] In various examples, the reactor system may include a base (e.g., base 130) comprising three pin holes (e.g., pin holes 137) (or any suitable number of pin holes), wherein corresponding lifting pins (e.g., lifting pins 400) are disposed in each pin hole. The pin holes may be spaced apart on or throughout the substrate support surface 135 in any suitable pattern (e.g., equidistantly spaced around the periphery of the substrate support surface 135, spaced apart by a pattern across the substrate support surface 135, etc.). The lifting pins may move uniformly up and down relative to the base (e.g., relative to the substrate support surface) to raise and lower the substrate (e.g., substrate 150). For example, the substrate may be raised to a processing position (i.e., a raised position) within the reaction space (e.g., upper chamber 112). Figure 2B The processing position shown is 106) and / or it is lowered to the loading position (i.e., the lower position) (e.g. Figure 2A (As shown in loading position 103). In various examples, the lifting pin can move while the base remains stationary, or the lifting pin can remain stationary while the base moves, to raise and lower the substrate relative to the base. In various examples, the lifting pin and the base can move to raise and lower the substrate relative to the base.

[0051] In various examples, the lifting pin 200 facilitates the removal of the substrate 150 from the reaction chamber 110, where the substrate 150 might otherwise adhere to the base 130 due to, for example, static friction between the substrate 150 and the base 130. The lifting pin 200 can facilitate the separation of the substrate 150 from the base 130 by moving the lifting pin 200 and / or the base 130 relative to each other.

[0052] In various examples, the substrate 150 may be positioned on the lifting pin 200 for loading and / or unloading from the reaction chamber 110. Positioning the substrate 150 on the lifting pin 200 facilitates loading or unloading of the substrate 150 from the reaction chamber 110, for example, through an opening 98 in the chamber sidewall 111.

[0053] In various examples, once the substrate 150 is positioned on the lifting pin 200, the substrate 150 can be moved from the loading position 103 to the processing position 106, during which the substrate 150 is received. In such embodiments, the pin tip and / or pin head (e.g., pin head 420) of the lifting pin 200 can be provided by a pin hole 137 ( Figure 3 The lifting pin 200 is received by the pin hole 337, so that the substrate 150 can directly contact the base 130. In various examples, the pin head of the lifting pin 200 can be supported by a portion of the pin hole 337 and / or the pin head hole 338 that is complementary to the portion of the pin head 420 in the radially outward region of the pin body 450. Thus, the lifting pin 200 can travel with the base 130 to the processing position 106, the lifting pin 200 being disposed in the pin hole 137 such that the pin tip (e.g., the pin tip 410 of the lifting pin 400) is flush with and / or below the substrate support surface 135.

[0054] In various examples, once the substrate 150 is positioned on the lifting pin 200, the lifting pin 200 can move downward relative to the base 130 and into the base 130 (e.g., upward via the base 130), such that the substrate 150 is received by the base 130 (i.e., thus placing the substrate 150 on the substrate support surface 135). In response, the pin tip (e.g., the pin tip 410 of the lifting pin 400) can be flush with and / or below the substrate support surface 135. The substrate 150 can then be processed within the reaction chamber.

[0055] In various examples, one or more lifting pins may include fluid paths through the respective lifting pins, allowing fluid to travel the length of the respective lifting pin. The fluid paths in the lifting pins may span the length of the lifting pins such that when the lifting pins are positioned in their respective pin holes in the base, both the upper and lower chambers of the reaction chamber are in fluid communication with the fluid paths via the lifting pins. Therefore, when the lifting pins are positioned in their respective pin holes, the fluid paths in the lifting pins may allow fluid communication between the upper and lower chambers. For example, the fluid paths included in the lifting element may span the length of the lifting pins, which is equal to or greater than the thickness of the base between the substrate support surface and the bottom surface of the base (e.g., so that gas can enter the fluid path in the lower chamber 114, flow through the lifting pin via the fluid path, and exit the fluid path into the upper chamber 112).

[0056] In various examples, the lift pin may include a porous material (e.g., in the pin body and / or pin head of the lift pin). The porous material may be configured to allow fluid to flow through the lift pin in a corresponding pin hole disposed in the base, and between the upper and lower chambers. That is, the porous material of the lift pin may include a fluid path fluidly connecting the upper and lower chambers. For example, Figure 3The lifting pin 299 may include a porous material (e.g., made entirely of a porous material). In various examples, a portion (or a portion of the length) of the lifting pin may include a porous material having a fluid path. Reference Figure 6A and 6B The lifting pin 600 (its cross-section is depicted) includes a pin body 650. The lifting pin 600 may have, for example... Figure 4 The lifting pin 400 is in its complete shape. The pin body 650 may include a solid portion 654 and a porous material 657. The solid portion 654 may be non-porous and may not allow fluid to pass through. The porous material 657 may be in a solid state (e.g., not a powder, etc.) and includes pores (e.g., including fluid paths) that allow fluid to pass through. The solid portion 654 may be a solid material sleeve surrounding the porous material 657. The porous material 657 may be disposed within the solid sleeve of the solid portion 654 (e.g., the solid portion 654 may at least partially or completely surround the porous material 657, for example, around the periphery of the cross-section of the lifting pin 600). The solid portion 654 may be open at both ends of the lifting pin (e.g., at the top and bottom ends), such that the porous material 657 is exposed at the ends of the solid portion 654. Thus, when the lifting pin 600 is disposed in the pin hole of the base, fluid can flow through the porous material 657 between the upper and lower chambers of the reactor (e.g., through the fluid paths passing through it). The solid portion 654 can facilitate contact (e.g., smooth contact) with the pin hole in the base, such that the movement of the lifting pin and / or the base relative to each other can be smooth and / or there is a substantial seal between the solid portion 654 and the pin hole surface in the base.

[0057] Figure 7 The cross-section of the lifting pin 700 is depicted. The lifting pin 700 may have, for example... Figure 4 The lifting pin 700 is in its complete shape. The lifting pin 700 may include a pin body 750. The pin body 750 may include a solid portion 754 (similar to solid portion 654 in FIG. 6) and a porous material 757 (similar to porous material 657 in FIG. 6). The porous material 757 may include a porous channel 760 disposed along at least a portion of the length of the lifting pin 700. The porous channel 760 may facilitate fluid flow through the porous material 757.

[0058] The cross-sectional shape of the lifting pin can be any suitable shape (e.g., circle, ellipse, square, rectangle, rhombus, triangle, hexagon, octagon, etc.). Figure 8 The cross-section of the lifting pin 800 is depicted. The lifting pin 800 may have, for example... Figure 4The lifting pin 400 has a complete shape. The lifting pin 800 may have a hexagonal cross-sectional shape. The lifting pin 800 may include a solid portion 854 and a porous material 857. The solid portion 854 may include a plurality of holes 860 disposed therethrough, at least a portion of the length of the lifting pin 800. The porous material 857 may be disposed in the holes 860. The porous material 857 in the holes 860 may facilitate fluid flow through the porous material 857.

[0059] The porous material included in the lift pin to facilitate fluid flow through it can include any suitable material, such as metals (e.g., elemental metals), metal alloys, metal oxides, ceramic materials, etc. For example, porous materials can include stainless steel, nickel, nickel alloys (e.g., Hastelloy), titanium, titanium alloys, chromium, chromium alloys, aluminum, aluminum alloys, alumina, aluminum nitride, boron nitride, zirconium oxide, silicon nitride, tricalcium phosphate, hydroxyapatite, zirconium-toughened alumina, alumina-toughened zirconium oxide, etc. In various examples, the lift pin material (e.g., porous material and / or solid material on the outer pin surface) configured to abut the base material when positioned in the base pin hole can include a material different from the base material. In various examples, the porous material can include a sintered material.

[0060] To form a lift pin (or a portion thereof) comprising sintered material, powdered and / or fibrous materials (e.g., any materials discussed herein, such as metals, metal alloys, metal oxides, ceramics, etc.) can be pressed together to form an object (e.g., a sheet or block of sintered material). The powdered and / or fibrous materials can be pressed under any suitable conditions, including any suitable temperature or pressure, and for any suitable duration to achieve an object comprising sintered material. The object comprising sintered material can be formed into any desired shape to form the lift pin (or a portion thereof). For example, the object comprising sintered material can be cut (e.g., by machining, laser cutting, etc.) to form the desired shape. In various examples, lift pins comprising porous materials can be formed by additive manufacturing (e.g., 3D printing, adhesive jetting, etc.).

[0061] In various examples, the powder and / or fibers used to form the porous lifting pins can include any suitable size. For example, the porous material can be formed from particles ranging in size from 0.2 to 100 dielectric (“dielectric” or other similar terms refer to particle sizes in micrometers), 0.2 to 5 dielectric, 0.5 to 5 dielectric, 5 to 100 dielectric, 5 to 20 dielectric, or 20 to 100 dielectric. Reference Figure 9For more compact or densely packed porous materials, relatively small powder sizes can be used, such as porous material 902 comprising 0.2 micrometers of media size. For relatively loosely packed or densely packed porous materials, relatively large powder sizes can be used, such as porous material 910 comprising 100 micrometers of media size. Porous materials 904, 906, and 908 depict other powder sizes of 0.5, 5, and 20 micrometers, respectively, to produce porous materials. Fiber material 912B (an enlarged view of fiber material 912A) can also be used to form porous materials, as discussed herein. In various examples, the pore size within the porous material can be any suitable size, such as 0.2 micrometers to 100 micrometers. The porosity of the porous material contained in the lifting pin can be 10-96%, 30-90%, 40-70%, or 50-60%.

[0062] like Figure 9 As shown, the spaces between porous materials (i.e., the pores within the porous material) provide significant space for fluid to travel through the lifting pins in the base (and thus between the upper and lower chambers of the reactor). Additionally, the relatively large surface area of ​​the porous material provides numerous sites where contaminants can be deposited and trapped. Therefore, fluid can pass through the porous material of the lifting pins, and the porous material can trap contaminants (e.g., fibrous material 912C and the contaminants trapped on it are shown).

[0063] In various examples, the fluid path within the lifting pin may include a pin channel configured to allow fluid to pass through the lifting pin between the upper and lower chambers of the reactor. (Reference) Figures 5A to 5C The lifting pin 500 may include a pin body 550. The pin body may include portions having a shape and size complementary to a corresponding pin hole in a base where the lifting pin 500 will be disposed. For example, the pin body 550 may include an upper body portion 553 having a shape complementary to the pin hole in the base and a lower body portion 556 having a smaller cross-sectional area than the upper body portion 553. A transition portion 558 may span between the upper body portion 553 and the lower body portion 556, thereby bridging the dimensional difference between them.

[0064] The lifting pin 500 may include a pin channel 560. The pin channel 560 may span in any suitable direction to facilitate the flow of fluid 504 through the lifting pin 500 and thus between the respective upper and lower chambers in the reactor. For example, the pin channel 560 may span linearly and parallel to the axis spanned by the pin body. In various examples, the pin channel may span between the pin tip and the pin bottom in any suitable configuration (e.g., in a non-linear path not parallel to the span of the pin body, in a serpentine, spiral, or any other desired configuration). In various examples, the pin channel may span sufficiently from the pin tip toward the pin bottom such that when the lifting pin is disposed in a corresponding pin hole in the base and the substrate is disposed on and in contact with the base, the upper and lower chambers are in fluid communication via the pin channel. In various examples, the pin channel may span from the pin tip (e.g., pin tip 410 of the lifting pin 400) to the pin bottom (e.g., pin bottom 490). In various examples, the pin channel 560 may extend from the pin tip 510 to the transition portion 558 of the pin body 550 (the channel 560 may open at the transition portion 558 of the pin body 550). The pin channel 560 may lead to the pin tip 510 (i.e., extend all the way through the pin head 520), and / or as... Figure 5C As shown, the pin channel 560 can change direction in the pin head 520 to lead to the outer surface 522 of the pin head.

[0065] The pin channel can include any suitable configuration. For example, the pin channel 560 can be completely enclosed within the lifting pin (within the cross-section of the lifting pin), or the pin channel can not be completely enclosed within the pin body of the lifting pin (for example, the pin channel can be open and recessed into the outer surface of the pin).

[0066] In various examples, refer to Figure 3 Except through fluid paths in the lifting pin (e.g., through porous material and / or pin channels in the lifting pin), the upper chamber 312 and lower chamber 314 can be substantially fluidly separated. (As used herein, "substantially fluid separation," "sealing," "substantially sealing," and / or other similar terms or phrases may mean complete fluid separation and / or sealing except for unintentional leakage). The flow rate and / or flow rate of fluid through fluid paths included in the lifting pin (e.g., from porous material and / or pin channels) can be adjusted by porosity (e.g., selecting less or more densely packed material for sintering, etc.) and / or pin channel size, shape, and / or path / route.

[0067] For further reference Figure 10The present disclosure illustrates a method 1000 for processing a substrate in a reaction chamber according to various embodiments. It should also be understood that the examples of this disclosure can be used in reaction chambers configured for a variety of deposition processes, including but not limited to ALD, CVD, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and physical vapor deposition (PVD). The examples of this disclosure can also be used in reaction chambers configured for processing a substrate with a reactive precursor, the processing of which may further include etching processes such as reactive ion etching (RIE), inductively coupled plasma etching (ICP), and electron cyclotron resonance etching (ECR).

[0068] In various examples, refer to Figure 2A , Figure 2B and Figure 10 The substrate 150 may be disposed within the reaction chamber 110 (step 1002). In various examples, the substrate 150 may be disposed directly on the substrate support surface 135 of the base 130. In various examples, the substrate 150 may be disposed on a lifting pin 200 protruding from the substrate support surface 135 of the base 130. In such examples, the lifting pin 200 and / or the base 130 may be movable relative to each other such that the pin tip is flush with or below the substrate support surface 135 of the base 130 (i.e., the pin tip 410 is at least partially disposed within the base 130), such that the substrate 150 is disposed directly on and in contact with the substrate support surface 135. In various examples, the lifting pin 200 may receive the substrate 150, and the base 130 may move upward while the lifting pin 200 remains stationary, such that the lifting pin 200 is recessed into the base 130 and the pin hole 137, and the base 130 receives the substrate 150 onto the substrate support surface 135 and positions the base 130 at the processing position 106 in the upper chamber 112.

[0069] In various examples, a pressure differential can be created between the upper chamber 112 and the lower chamber 114 (step 1004). A vacuum source 92 can be used to evacuate the reaction chamber 110 and / or the lower chamber 114. A flow controller 94 can be fluidly coupled to the lower chamber 114 via the lower chamber inlet to provide a fluid flow into the lower chamber 114, thereby increasing the pressure therein. The pressure in the upper chamber 112 can remain constant or increase at a rate less than the pressure in the lower chamber 114 (e.g., when the flow controller 94 allows fluid to flow into the lower chamber 114). Figure 3 As shown, the flow controller 394 can supply fluid flow to the lower chamber 314, thereby increasing the pressure therein relative to the upper chamber 312. The vacuum source 392 can be used to evacuate the upper chamber 312 and / or the lower chamber 314. (See again...) Figure 2A and Figure 2BThe upper chamber 112 may include upper chamber pressure, and the lower chamber 114 may include lower chamber pressure. Flow controller 94 (or any other suitable device) may make the lower chamber pressure greater than the upper chamber pressure.

[0070] The base 130 may include at least one pin hole 137 extending from the substrate support surface 135 across the base 130 to the base bottom surface 136 (or at least a portion thereof), each pin hole having a lifting pin 200 disposed therein. One or more of the lifting pins may include fluid paths therethrough. As discussed herein, the fluid paths may be included in a porous material of the lifting pin and / or in one or more pin channels disposed through the lifting pin. As discussed herein, the fluid paths in the lifting pins may span any suitable length of the pin body such that when the lifting pin 200 is disposed in the pin hole 137 of the base 130 and the pin tip is flush with or below the substrate support surface 135, the upper chamber 112 and the lower chamber 114 may be in fluid communication through the fluid paths through the lifting pin 200.

[0071] In response to the creation of a pressure differential between the upper chamber 112 and the lower chamber 114 (i.e., the upper chamber 112 has a lower pressure than the lower chamber 114), fluid can flow from the lower chamber 114 to the upper chamber 112 through a fluid path in the lift pin 200 (step 1006), for example, through the lift pin comprising a porous material and / or through pin channels in the lift pin. The fluid flow rate and / or flow rate through the lift pin can be any suitable and / or desired level, which can be adjusted based on the porous material used, the porosity of the porous material, and / or the size / configuration of the pin channels of the lift pin. For example, the flow rate through the lift pin can be 1-20 standard cubic centimeters per minute (sccm), 2-10 sccm, or about 5 sccm (where “about” means ±2 sccm). The fluid flowing through the lift pin 200 can pass under the substrate 150, thereby purging the space under the substrate 150 (e.g., between the base 130 and the substrate 150) (step 1008) and / or the space around the edge of the substrate 150. In various examples, reference is made temporarily. Figure 3The pin hole 337 and / or the fluid path via the lifting pin 299 can be in fluid communication with the base channel 334. Therefore, fluid can flow from the lower chamber 314, through the lifting pin 299, and through and along the base channel 334, beneath the substrate 350 disposed on the base 330, purging the underside and / or edges of the substrate 150. This can reduce or prevent contamination and / or deposition on the underside and / or edges of the substrate 150. Additionally, the pressure difference between the lower chamber 114 and the upper chamber 112, which has a higher pressure than the upper chamber 112, can cause any fluid leakage between the lower chamber 114 and the upper chamber 112, flowing from the lower chamber 114 to the upper chamber 112. Therefore, when fluid flows from the lower chamber 114 to the upper chamber 112, the flow of precursor gas and / or other materials from the upper chamber 112 to the lower chamber 114 can be at least partially suppressed or prevented.

[0072] In various examples, the steps of method 1000 (e.g., steps 1004-1008) for purging the underside (i.e., back side) and / or edges of substrate 150 on substrate support surface 135 can be applied throughout the substrate processing and / or at any suitable time and in any suitable manner. For example, the steps of method 1000 can be performed continuously before, during, and / or between deposition cycles. As another example, the steps of method 1000 can be performed before and / or during each deposition cycle (i.e., before and / or throughout each application of material through spray head 180, interrupted during drying / baking between deposition cycles to form the resulting layer on substrate 150).

[0073] In various examples, deposition cycles can be performed on substrate 150 until the desired chemical system for a layer of desired thickness is set on substrate 150. In response, substrate 150 can be removed from reaction chamber 110. For this purpose, pedestal 130 and / or lifting pin 200 can be moved relative to each other. For example, pedestal 130 can be moved downwards relative to lifting pin 200 within reaction chamber 110, and / or lifting pin 200 can be moved upwards relative to pedestal 130 within reaction chamber 110. Thus, substrate 150 can be raised away from substrate support surface 135 of pedestal 130 via lifting pin 200, which facilitates removal of substrate 150 from reaction chamber 110.

[0074] While exemplary embodiments of this disclosure are set forth herein, it should be understood that this disclosure is not limited thereto. For example, although reactor systems are described in conjunction with various specific configurations, this disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements may be made to the systems and methods described herein without departing from the spirit and scope of this disclosure.

[0075] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various systems, components and configurations disclosed herein, as well as any and all equivalents thereof.

Claims

1. A reactor system, comprising: Reaction chamber; A base is disposed within the reaction chamber, wherein the base is positioned between an upper chamber and a lower chamber included in the reaction chamber. The base includes a pin hole that passes through the base, allowing fluid communication between the pin hole and the upper and lower chambers; and also allowing fluid communication between the upper and lower chambers. A lifting pin is disposed in a pin hole, wherein the lifting pin includes a pin body comprising a porous material configured to allow fluid to flow through the lifting pin between an upper chamber and a lower chamber.

2. The reactor system of claim 1, wherein, Except through the pin hole in which the lifting pin is provided, the upper chamber is substantially fluid-tightly isolated from the lower chamber.

3. The reactor system of claim 1, wherein, The lower chamber includes a lower chamber inlet, through which fluid flows into the lower chamber.

4. The reactor system of claim 3, wherein, The lower chamber includes a lower chamber pressure, and the upper chamber includes an upper chamber pressure, wherein the lower chamber pressure is greater than the upper chamber pressure, causing fluid to flow from the lower chamber through the porous material in the lifting pin into the upper chamber.

5. The reactor system of claim 4, wherein, The base includes a support surface configured to support a substrate, wherein the support surface includes a base channel recessed into the base, which leads to the support surface and is in fluid communication with the pin hole.

6. The reactor system of claim 5, wherein, The base channel in the base is configured to allow fluid to flow from the pin hole and through the base channel when the substrate is disposed on the support surface, such that the fluid flows below the substrate and is configured to purge contaminants from below the substrate.

7. The reactor system of claim 1, wherein, The porous material includes sintered materials.

8. The reactor system of claim 1, wherein, The pin body also includes a solid portion surrounding the porous material.

9. The reactor system of claim 8, wherein, The solid part of the pin body is a solid sleeve, and the porous material is disposed in the solid sleeve.

10. The reactor system of claim 1, wherein, The lifting pin includes a pin head at the top of the pin body, wherein the pin head includes the porous material, and wherein the pin head is at least partially disposed in the pin hole of the base.

11. A lifting pin configured to be disposed in a base included in a reactor system, the lifting pin comprising: The pin body includes a porous material, wherein the porous material is configured to allow fluid to flow through at least a portion of the pin length.

12. The lift pin of claim 11, wherein, The porous material includes sintered materials.

13. The lift pin of claim 11, wherein, The pin body also includes a solid portion surrounding the porous material.

14. The lift pin of claim 11, wherein, The solid part of the pin body is a solid sleeve, and the porous material is disposed in the solid sleeve.

15. A reactor system comprising: Reaction chamber; as well as A base disposed in a reaction chamber, wherein the base is positioned between an upper chamber and a lower chamber included in the reaction chamber, and the base includes: Support surface, configured to support substrate; and A fluid path, which is configured to pass through the base and support surfaces, fluidly connects the upper and lower chambers. The lower chamber includes the lower chamber pressure, and the upper chamber includes the upper chamber pressure. The lower chamber pressure is greater than the upper chamber pressure, which causes the fluid to flow from the lower chamber through the fluid path into the upper chamber.

16. The reactor system of claim 15, wherein, The base also includes a base channel recessed into the base through the support surface, which leads to the support surface and is fluidly connected to the fluid path.

17. The reactor system of claim 15, wherein, The base also includes a pin hole through which the base is disposed, and the reactor system further includes a lifting pin disposed in the pin hole, wherein the lifting pin includes the fluid path, such that fluid flows through the lifting pin.

18. The reactor system of claim 17, wherein, The lift pin comprises a porous material, wherein the porous material comprises the fluid path.

19. The reactor system according to claim 18, wherein, The porous material comprises a sintered material.

20. The reactor system of claim 18, wherein, The pin body further comprises a solid portion surrounding the porous material.

Images