Simulation method for response of energy selective surface to high power electromagnetic wave
By combining a time-domain solver with a Diode device model and CST Microwave Studio software, an energy-selective surface model was constructed, solving the problem that existing technologies cannot accurately simulate the nonlinear response of energy-selective surfaces and realizing real-time response simulation under high-power electromagnetic waves.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- UNIV OF ELECTRONICS SCI & TECH OF CHINA
- Filing Date
- 2026-03-27
- Publication Date
- 2026-06-30
AI Technical Summary
Existing technologies are insufficient to accurately characterize the time-domain propagation of energy selective surfaces under high-power electromagnetic waves and the dynamic changes in the device's induced voltage. Traditional simulation methods cannot accurately simulate its nonlinear response process.
The PIN diode was modeled using a time-domain solver and a Diode device model, and then simulated using CST Microwave Studio software. An energy selective surface model was constructed, including a cross-shaped patch and a dielectric substrate structure, and electromagnetic wave excitation sources and boundary conditions were set.
Real-time simulation of the response of energy selective surfaces under high-power electromagnetic waves was achieved, improving simulation accuracy and iteration speed.
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Figure CN122311097A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of electromagnetic functional materials simulation technology, and provides a simulation method for the response of energy selective surfaces to high-power electromagnetic waves. Background Technology
[0002] In the field of electronic information, the interference and damage of strong electromagnetic environments such as high-power microwaves and nuclear electromagnetic pulses to precision electronic equipment and systems are becoming increasingly prominent. Energy selective surfaces (ESS), as artificial electromagnetic structures that combine frequency selectivity and energy threshold response characteristics, have become the core application solution in the field of strong electromagnetic protection. Their design, performance optimization and engineering implementation are highly dependent on accurate electromagnetic simulation analysis methods.
[0003] The design of existing energy selective surfaces relies on nonlinear devices such as PIN diodes to achieve energy threshold regulation. Their operating characteristics are determined by multiple factors, including the equivalent circuit parameters of the device, the unit structure size, the incident wave angle, the finite arrangement in actual engineering, and structural deformation. Traditional simulation methods (which treat PIN diodes as equivalent capacitors and resistors) can only perform approximate simulations of the structure, making it difficult to accurately characterize the time-domain propagation law of electromagnetic waves, the dynamic changes of the device induced voltage, and the nonlinear response process of the structure under actual operating conditions. Summary of the Invention
[0004] To address the problems in the prior art, this application proposes a simulation method for the response of energy selective surfaces to high-power electromagnetic waves. This method uses a time-domain solver and a diode device model to solve the problem that PIN diodes cannot respond to electromagnetic wave energy in simulation.
[0005] To achieve the above objectives, the present invention provides the following technical solution:
[0006] A simulation method for the response of energy-selective surfaces to high-power electromagnetic waves includes the following steps:
[0007] Step 1: Model the energy selective surface using CST Microwave Studio software. The bottom is on the XOY plane. The energy selective surface unit consists of a cross-shaped patch and a dielectric substrate.
[0008] Step 2: Adjust the energy selective surface unit so that two of its edges are parallel to the X-axis, then array them in the X-axis and Y-axis directions respectively, and then merge them to obtain the energy selective surface model;
[0009] Step 3: Use CST Microwave Studio software to model the shielding box. The bottom is on the XOY plane. First, create a cuboid with PEC as the ideal conductor material as the main body of the shielding box. The center of the shielding box and the center of the energy selection surface are on the same Z-axis, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Then, create a cuboid with PEC as the main body of the internal space. The center of the internal space and the center of the energy selection surface are on the same Z-axis, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Next, select the shielding box and use the Boolean subtraction operation BooleanSubtract. Then select the internal space and press ENTER to complete the modeling of the shielding box.
[0010] Step 4: Set the electromagnetic wave excitation source, boundary conditions, and field monitor in CST Microwave Studio software.
[0011] As a preferred embodiment, the energy selective surface unit has a cross-shaped patch structure whose center overlaps with the center of the dielectric substrate structure, the cross arms of the cross patch are parallel to the edge of the dielectric substrate, and the bottom of the cross patch is attached to the top of the dielectric substrate.
[0012] As a preferred method, the cross arm length l of the energy selective surface cross patch structure is 8mm-9mm, the cross structure width w is 0.5mm-1mm, the cross structure thickness h1 is 0.02mm-0.05mm, and the material is PEC or pure copper.
[0013] As a preferred embodiment, the thickness h2 of the dielectric substrate structure is 0.05mm-0.5mm, the side length d of the dielectric substrate is 9.5mm-10.5mm, and the material is microfiber reinforced polytetrafluoroethylene composite material.
[0014] As a preferred method, the energy selective surface unit is adjusted so that two of its sides are parallel to the X-axis, and then arrayed with a length of 10mm in the X-axis and Y-axis directions respectively. The Boolean addition operation is used to merge all the cross-shaped patch units with the dielectric substrate respectively, and the resulting energy selective surface model has a side length of 50mm to 200mm.
[0015] As a preferred embodiment, the shielding box has a rectangular hollow structure. The wall thickness of the metal shielding box is uniformly set to 5mm, and the length of the shielding box is l. p The width of the shielding box is 50mm-200mm. p The thickness of the shielding box is 50mm-200mm. p The diameter is 100mm-400mm, and its overall material is PEC, an ideal electrical conductor; of the six sides of the shielding box, one side is an open side and the other five sides are closed sides, forming a space with a single-sided opening and a hollow interior.
[0016] As a preferred approach, the size of the energy selection surface model is between 50mm*50mm*0.05mm (length*width*height) and 200mm*200mm*0.05mm.
[0017] As a preferred approach, a diode model is established at the center of the adjacent cross arms of all adjacent cross patches, where R = 0.8Ω and C = 1.7e-13F.
[0018] As a preferred method, the electromagnetic wave excitation source is selected as a plane wave, the plane wave field strength is 1000 V / m, the simulation frequency is 4.9-5.1 GHz, the elevation angle is 0°, and the azimuth angle is 0°; the X and Y axis boundary conditions are set to open boundaries, and the Z axis boundary condition is open boundaries with added space; the field monitor is set to electric field E-field monitor, and the type is selected as Time.
[0019] Compared with the prior art, the present invention has the following advantages:
[0020] 1. This invention uses a diode device model to model PIN diodes, which solves the problem that diodes cannot generate a real-time response to incident wave energy in simulation.
[0021] 2. This invention uses the commonly used software CST for simulation, which has low requirements for modeling and fast iteration speed. Attached Figure Description
[0022] Figure 1 This is a simulation model diagram in an embodiment of the present invention;
[0023] Figure 2 This is a front view of the model of the energy selective surface unit of the present invention;
[0024] Figure 3 This is a side view of the model of the energy selective surface unit of the present invention;
[0025] Figure 4 This is a diagram of the energy-selective surface model of the present invention;
[0026] Figure 5 This is a model diagram of the shielding box of the present invention;
[0027] Figure 6 This is a diagram showing the diode loading position of the present invention. Detailed Implementation
[0028] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0029] Example 1
[0030] A simulation method for the response of energy-selective surfaces to high-power electromagnetic waves includes the following steps:
[0031] Step 1: Model the energy selective surface using CST Microwave Studio software. The bottom is on the XOY plane. The energy selective surface unit consists of a cross-shaped patch and a dielectric substrate.
[0032] Step 2: Adjust the energy selective surface unit so that two of its edges are parallel to the X-axis, then array them in the X-axis and Y-axis directions respectively, and then merge them to obtain the energy selective surface model;
[0033] Step 3: Use CST Microwave Studio software to model the shielding box. The bottom is on the XOY plane. First, create a cuboid with PEC as the ideal conductor material as the main body of the shielding box. The center of the shielding box and the center of the energy selection surface are on the same Z-axis, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Then, create a cuboid with PEC as the main body of the internal space. The center of the internal space and the center of the energy selection surface are on the same Z-axis, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Next, select the shielding box and use the Boolean subtraction operation BooleanSubtract. Then select the internal space and press ENTER to complete the modeling of the shielding box.
[0034] Step 4: Set the electromagnetic wave excitation source, boundary conditions, and field monitor in CST Microwave Studio software.
[0035] Specifically, in the preferred embodiment, the center of the energy selective surface unit is an overlap of the center of the cross-shaped patch structure and the center of the dielectric substrate structure, the cross arms of the cross patch are parallel to the edge of the dielectric substrate, and the bottom of the cross patch is attached to the top of the dielectric substrate.
[0036] Specifically, the preferred cross-shaped structure of the energy selective surface cross patch has an arm length l of 8mm-9mm, a cross structure width w of 0.5mm-1mm, a cross structure thickness h1 of 0.02mm-0.05mm, and is made of PEC or pure copper.
[0037] Specifically, the preferred dielectric substrate structure has a thickness h2 of 0.05mm-0.5mm, a side length d of 9.5mm-10.5mm, and is made of microfiber reinforced polytetrafluoroethylene composite material.
[0038] Specifically, the energy selective surface unit is adjusted so that two of its sides are parallel to the X-axis, and then arrayed with a length of 10mm in the X-axis and Y-axis directions respectively. The Boolean addition operation is used to merge all the cross-shaped patch units with the dielectric substrate respectively, and the resulting energy selective surface model has a side length of 50mm to 200mm.
[0039] Specifically, preferably, the shielding box has a rectangular hollow structure, and the wall thickness of the metal shielding box is uniformly set to 5mm, with a length of l. p The width of the shielding box is 50mm-200mm. p The thickness of the shielding box is 50mm-200mm. p The diameter is 100mm-400mm, and its overall material is PEC, an ideal electrical conductor; of the six sides of the shielding box, one side is an open side and the other five sides are closed sides, forming a space with a single-sided opening and a hollow interior.
[0040] Specifically, the preferred size of the energy selection surface model is between 50mm*50mm*0.05mm (length*width*height) and 200mm*200mm*0.05mm.
[0041] Specifically, preferably, a diode model is established at the center of the adjacent cross arms of all adjacent cross patches, where R=0.8Ω and C=1.7e-13F.
[0042] Specifically, the preferred electromagnetic excitation source is a plane wave with a field strength of 1000 V / m, a simulation frequency of 4.9-5.1 GHz, an elevation angle of 0°, and an azimuth angle of 0°. The X and Y axis boundary conditions are set to open boundaries, and the Z axis boundary condition is an open boundary with added space. The field monitor is set to an electric field E-Field monitor, and the type is selected as Time.
[0043] Example 2
[0044] like Figure 1 As shown, the simulation method for the response of energy-selective surfaces to high-power electromagnetic waves includes the following steps:
[0045] Step 1: As Figure 2 , 3As shown, the energy selective surface was modeled using CST Microwave Studio software, with its bottom on the XOY plane. The energy selective surface unit consists of a cross-shaped patch and a dielectric substrate. The cross-shaped patch is made of PEC, and the dielectric substrate is made of Rogers RT5880 (lossy), with parameters set as l=8.6mm, w=0.6mm, h1=0.035mm, h2=0.128mm, and d=10mm. The center of the cross-shaped patch overlaps with the center of the dielectric substrate, the cross arms of the cross-shaped patch are parallel to the edge of the dielectric substrate, and the bottom of the cross-shaped patch is attached to the top of the dielectric substrate.
[0046] Step Two: As Figure 4 As shown, the energy selective surface unit is adjusted so that two of its edges are parallel to the X-axis, and then arrayed with a length of 10mm in both the X and Y axes. All cross-shaped patch units are merged using the Boolean addition operation and named solid1; then all dielectric substrates are merged and named solid2. Combining solid1 and solid2 yields the energy selective surface model.
[0047] Step 3: As Figure 5 As shown, the shielding box was modeled using CST Microwave Studio software, with its bottom on the XOY plane. First, a model was created using PEC, an ideal electrical conductor, with dimensions (length l of the shielding box). p *Width of shielding box (w) p *Shielding box thickness h p A 105mm*105mm*205mm cuboid is used as the main body of the shielding box. The center of the shielding box and the center of the energy selection surface are on the same Z-axis, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Next, a 100mm*100mm*200mm cuboid of PEC material is created as the main body of the internal space. The center of the internal space is on the same Z-axis as the center of the energy selection surface, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Then, the shielding box is selected and Boolean subtraction is applied. The internal space is then selected, and ENTER is pressed to complete the modeling of the shielding box with a wall thickness of 5mm.
[0048] Step Four: As Figure 6 As shown, select the center of the adjacent cross arms of all adjacent cross patches, and create a Diode model in LumpedElement, where the resistance value is 0.8Ω and the capacitance value is 1.7e-13F.
[0049] Step 5: In the CST settings, select plane wave as the electromagnetic excitation source, with a plane wave field strength of 1000V / m, a simulation frequency of 4.9-5.1 GHz, an elevation angle of 0°, and an azimuth angle of 0°; set the X and Y axis boundary conditions to open, and the Z axis boundary condition to open (add space); set the field monitor to electric field E-Field monitor, and select Time as the type.
[0050] Step Six: Click Start Calculation, which is the simulation method for the response of energy-selective surfaces to high-power electromagnetic waves.
[0051] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A simulation method for the response of energy-selective surfaces to high-power electromagnetic waves, characterized in that... Includes the following steps: Step 1: Model the energy selective surface using CST Microwave Studio software. The bottom is on the XOY plane. The energy selective surface unit consists of a cross-shaped patch and a dielectric substrate. Step 2: Adjust the energy selective surface unit so that two of its edges are parallel to the X-axis, then array them in the X-axis and Y-axis directions respectively, and then merge them to obtain the energy selective surface model; Step 3: Use CST Microwave Studio software to model the shielding box. The bottom is on the XOY plane. First, create a cuboid with PEC as the ideal conductor material as the main body of the shielding box. The center of the shielding box and the center of the energy selection surface are on the same Z-axis, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Then, create a cuboid with PEC as the main body of the internal space. The center of the internal space and the center of the energy selection surface are on the same Z-axis, and the top surface of the cuboid is flush with the top surface of the energy selection surface. Next, select the shielding box and use the Boolean subtraction operation BooleanSubtract. Then select the internal space and press ENTER to complete the modeling of the shielding box. Step 4: Set the electromagnetic wave excitation source, boundary conditions, and field monitor in CST Microwave Studio software.
2. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, The energy selective surface unit has a cross-shaped patch structure whose center overlaps with the center of the dielectric substrate structure. The cross arms of the cross patch are parallel to the edge of the dielectric substrate, and the bottom of the cross patch is attached to the top of the dielectric substrate.
3. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, The cross arm length l of the energy selection surface cross patch structure is 8mm-9mm, the cross structure width w is 0.5mm-1mm, and the cross structure thickness h1 is 0.02mm-0.05mm. The material is PEC or pure copper.
4. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, The thickness h2 of the dielectric substrate structure is 0.05mm-0.5mm, the side length d of the dielectric substrate is 9.5mm-10.5mm, and the material is micro-glass fiber reinforced polytetrafluoroethylene composite material.
5. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, Adjust the energy selective surface unit so that two of its sides are parallel to the X-axis, and then array them with a length of 10mm in the X-axis and Y-axis directions respectively. Use Boolean Add to merge all the cross-shaped patch units with the dielectric substrate. The resulting energy selective surface model has a side length of 50mm to 200mm.
6. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, The shielding box has a rectangular hollow structure. The wall thickness of the metal shielding box is uniformly set at 5mm, and the length of the shielding box is l. p The width of the shielding box is 50mm-200mm. p The thickness of the shielding box is 50mm-200mm. p The diameter is 100mm-400mm, and its overall material is PEC, an ideal electrical conductor; of the six sides of the shielding box, one side is an open side and the other five sides are closed sides, forming a space with a single-sided opening and a hollow interior.
7. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, The size of the energy-selective surface model ranges from 50mm*50mm*0.05mm (length*width*height) to 200mm*200mm*0.05mm.
8. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, At the center of the adjacent cross arms of all adjacent cross-shaped patches, a diode model is established, where R = 0.8Ω and C = 1.7e-13F.
9. The simulation method for the response of an energy-selective surface to high-power electromagnetic waves according to claim 1, characterized in that, The electromagnetic wave excitation source is selected as a plane wave, the plane wave field strength is 1000 V / m, the simulation frequency is 4.9-5.1 GHz, the elevation angle is 0°, and the azimuth angle is 0°. The X and Y axis boundary conditions are set to open boundaries, and the Z axis boundary condition is open boundaries with added space. The field monitor is set to electric field E-field monitor, and the type is selected as Time.