A method for manufacturing a back side SE structure battery
By employing a back-side SE structure cell fabrication method in the TOPCon structure, and replacing the poly layer in the non-metallic region with a silicon substrate and passivation film, combined with laser scanning to form a patterned mask, the parasitic absorption problem of doped polycrystalline silicon is solved, improving cell performance and reducing production costs.
CN122340929APending Publication Date: 2026-07-03CHANGZHOU SHICHUANG ENERGY CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHANGZHOU SHICHUANG ENERGY CO LTD
- Filing Date
- 2024-12-25
- Publication Date
- 2026-07-03
Smart Images
Figure CN122340929A_ABST
Abstract
This invention provides a method for fabricating a back-side SE structure solar cell. After depositing a tunneling oxide layer and a poly layer on the back side, the method uses a patterned mask to form a corresponding patterned POLO structure. The POLO structure is present only in the metallized regions, while the non-metallized regions consist only of a silicon substrate and a functional layer. This avoids the severe photoparasitic absorption problem caused by the poly layer in the non-metallized regions. Using this method, the PSG removal process can be integrated into the de-coating process, requiring only the addition of an HF bath before de-coating, thus reducing manufacturing costs.
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