Etching solution with high etching rate selection ratio as well as preparation method and application of etching solution
By preparing an etchant containing organic acids, inorganic acids, oxidants, and additives with a high etch rate selectivity, the problems of color residue and insufficient etch rate in existing etchants are solved, achieving fast etch rate, high selectivity, and good etch uniformity, thus improving the imaging quality of semiconductor display panels.
Patent Information
- Application Number
- CN202610409095.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-31
- Publication Date
- 2026-07-07
AI Technical Summary
Existing etching solutions may produce a light blue color, which cannot guarantee that the TFT-array will be free of color residue after etching. Furthermore, the etching rate and selectivity are insufficient, affecting the imaging effect of the semiconductor display panel.
A high etching rate selectivity etching solution is used, which contains organic acid, inorganic acid, oxidant, nitrate and additives. By adjusting the charge distribution on the metal surface and forming a protective film, excessive etching is inhibited. The etching solution is clear and colorless, and the component ratio is 5-10 parts organic acid, 60-80 parts inorganic acid, 8-15 parts oxidant, 1-2 parts nitrate, 1-2 parts additives and 5-15 parts pure water.
It achieves clear and colorless etching solution, fast etching rate, high selectivity, and good etching uniformity, avoids metal layer shrinkage, and improves the imaging effect of semiconductor display panels.