A silicon carbide powder and a method for producing the same, and a semi-insulating silicon carbide

By utilizing the axial temperature gradient formed by flowing gas in an induction synthesis furnace, the problems of low purity and high cost of high-purity silicon carbide powder have been solved, achieving efficient preparation and cost reduction of high-purity silicon carbide powder and promoting its large-scale application.

CN122355296APending Publication Date: 2026-07-10CHENGDU ZHONGWEI CRYSTAL MATERIALS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CHENGDU ZHONGWEI CRYSTAL MATERIALS CO LTD
Filing Date
2026-06-09
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

High-purity silicon carbide powder has low purity and high cost, making it difficult to achieve large-scale, high-quality preparation with existing technologies, and the domestic supply chain lacks self-sufficiency.

Method used

A split synthesis method is adopted, which utilizes the flow of gas to form an axial temperature gradient in the induction synthesis furnace. The mixed gas of He and H2 forms a gas distribution zone in the vertical direction, and the raw materials are split step by step to control the removal of impurities and prepare high-purity and N-type silicon carbide powder.

Benefits of technology

This technology has achieved a purity of 99.99995% for high-purity silicon carbide powder, reduced the cost to below 5,000 yuan/kg, simplified the preparation process, lowered investment costs, and promoted the large-scale production of high-purity silicon carbide powder.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention discloses a silicon carbide powder and its preparation method, as well as semi-insulating silicon carbide, relating to the field of semiconductor technology. The preparation method includes placing a mixture of silicon powder and carbon powder in a reaction apparatus and performing pre-calcination under flowing gas conditions. After pre-calcination, the powder is synthesized in a flowing gas atmosphere with staged pressure variation to obtain silicon carbide powder. In an environment with an axial temperature gradient, the flowing gas causes the raw materials to be gradually divided in the reaction apparatus, forming a gas distribution zone. This results in the purity of the powder in the crucible gradually increasing from bottom to top, with high-purity silicon carbide powder obtained at the top and N-type silicon carbide powder obtained in the middle. This preparation method is simple and easy to operate, significantly reducing investment costs. This preparation method effectively solves the problems of low purity and high cost of high-purity silicon carbide powder, achieving a purity of over 99.99995% in the synthesized silicon carbide powder; it is beneficial for promoting the large-scale, high-quality preparation of high-purity silicon carbide powder.
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