A terahertz amplitude modulator based on graphene-huygens super surface

By integrating graphene-Huygens metasurface design, the contradiction between modulation depth and bandwidth in graphene metasurface terahertz amplitude modulators is resolved, achieving high modulation depth, wide bandwidth, low loss and high speed modulation, meeting the needs of 6G communication and real-time imaging, simplifying device structure and reducing cost.

CN122362706APending Publication Date: 2026-07-10NANJING UNIV OF POSTS & TELECOMM
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV OF POSTS & TELECOMM
Filing Date
2026-06-05
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

Existing graphene metasurface terahertz amplitude modulators suffer from the contradiction between modulation depth and operating bandwidth, the free space impedance matching problem of transmission modulators, the RC delay limitation caused by significant parasitic capacitance, and the complexity of device structure, which cannot meet the requirements of 6G ultra-wideband communication and real-time imaging.

Method used

By adopting an integrated design of graphene-Huygens metasurface, the electric dipole unit and modulation electrode are integrated, and the Huygens principle and multi-mode overlap mechanism are combined to achieve ultra-wideband low-loss modulation and GHz-level high-speed modulation rate, simplifying the device structure and reducing parasitic parameters.

Benefits of technology

A terahertz amplitude modulator with ultra-wide bandwidth, high modulation depth, low insertion loss, and high modulation rate has been realized, which can meet the needs of ultra-high-speed communication and real-time imaging. The device has a simple structure, low cost, and is easy to integrate.

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Abstract

This application belongs to the field of terahertz technology and artificial electromagnetic metamaterials, and discloses a terahertz amplitude modulator based on a graphene-Huygens metasurface. It consists of a periodically arranged two-dimensional array of modulation cell units. From top to bottom, a first metal layer, a first dielectric layer, a patterned metal electrode layer, a graphene layer, a second dielectric layer, and a second metal layer are sequentially arranged. The first metal layer is attached to the upper surface of the first dielectric layer, and the patterned metal electrode layer is located on the lower surface of the first dielectric layer, forming electrical contact with the graphene layer below, serving as the source and drain. The second metal layer is attached to the lower surface of the second dielectric layer. A gate voltage is applied through the first metal layer to dynamically control the Fermi level of the graphene layer. The second metal layer and the first metal layer cooperate to satisfy the Huygens electromagnetic dipole matching condition. This application innovatively achieves an integrated design of the gate and the metasurface electric resonant unit, while simplifying the device structure, reducing parasitic parameters, and improving integration density.
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