Aluminum-based copper-plated electrode of an integrated circuit and method for manufacturing the same
By designing an oblique corrugated structure and an interlaced composite coating layer on the surface of the aluminum substrate, the problem of coating delamination and peeling caused by the difference in thermal expansion coefficients in aluminum-based copper-plated electrodes is solved, resulting in aluminum-based copper-plated electrodes with high reliability and excellent conductivity.
Patent Information
- Application Number
- CN202610374812.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-25
- Publication Date
- 2026-07-10
AI Technical Summary
Existing aluminum-based copper-plated electrodes are prone to delamination and peeling of the plating due to differences in thermal expansion coefficients during high-temperature welding and high-low temperature cycling, which affects conductivity and reliability and limits their application in high-reliability scenarios.
The aluminum substrate is designed with an oblique corrugated structure, and through the staggered distribution of composite coating layers, including copper and aluminum coatings, a vertically corresponding multi-layer structure is formed, which enhances the coating adhesion and disperses thermal expansion stress.
It effectively disperses thermal expansion stress, improves coating bonding strength, ensures conductivity and long-term reliability, and is suitable for high-reliability semiconductor devices.
Smart Images
Figure CN122373439A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor device technology, and in particular to an aluminum-based copper-plated electrode for integrated circuits and its preparation method. Background Technology
[0002] In the field of integrated circuits and discrete semiconductor devices, electrodes are core functional components that enable electrical conduction, signal transmission, and heat dissipation between chips and external circuits. Their material selection and structural design directly determine the conductivity, solderability, and long-term reliability of semiconductor devices. Currently, mainstream semiconductor electrodes in the industry generally use pure copper or copper alloys as the base material. These materials possess excellent conductivity and solderability, meeting the basic usage requirements of conventional semiconductor devices. With the semiconductor industry's trend towards cost reduction, efficiency improvement, and device lightweighting, the industry is gradually developing technologies to "replace copper with aluminum," attempting to use aluminum or aluminum alloys as the electrode base. By plating copper on the surface, the technology combines the low cost and lightweight advantages of the aluminum base with the high conductivity and easy solderability of the copper plating. Related aluminum-based copper-plated electrode technologies have already been piloted in some low-to-mid-range semiconductor devices.
[0003] The core defect that existing aluminum-based copper-plated electrode technology cannot overcome lies in the inherent difference in the coefficients of thermal expansion between aluminum and copper. The coefficient of linear expansion of aluminum is about 1.3-1.4 times that of copper. Throughout the entire life cycle of electrode high-temperature welding and device operation high and low temperature cycling, the aluminum substrate and copper plating will generate continuous interlayer shear stress due to the mismatch in the magnitude of thermal expansion and contraction. Existing conventional planar plating and single transition layer structures cannot effectively disperse and release this thermal stress, which easily leads to problems such as plating blistering, delamination, and peeling. This not only causes a sharp increase in electrode contact resistance and a significant decrease in conductivity, but may even lead to electrode open circuit and overall device failure. This core defect directly limits the large-scale application of aluminum-based copper-plated electrodes in high-reliability scenarios such as automotive and industrial applications, becoming a key bottleneck restricting the full implementation of "aluminum-for-copper" technology in the semiconductor electrode field. Summary of the Invention
[0004] The technical problem to be solved by the present invention is that the existing technology has the disadvantages of high contact resistance, low coating bonding strength, and easy coating peeling and cracking due to thermal expansion mismatch. To this end, we propose an aluminum-based copper-plated electrode for integrated circuits and its preparation method.
[0005] To achieve the above objectives, this application adopts the following technical solution: an aluminum-based copper-plated electrode for an integrated circuit, comprising an aluminum substrate, wherein a first copper plating layer and a first aluminum plating layer are disposed on the surface of the aluminum substrate as a first composite coating layer, the first copper plating layer and the first aluminum plating layer are separated, a second copper plating layer and a second aluminum plating layer are disposed on the upper surface of the first copper plating layer and the first aluminum plating layer as a second composite coating layer, the first copper plating layer and the second copper plating layer correspond to each other, the first aluminum plating layer and the second aluminum plating layer correspond to each other, and a third copper plating layer is disposed on the upper surface of the second copper plating layer and the second aluminum plating layer as a third composite coating layer.
[0006] Preferably, the aluminum substrate is the base structure of the electrode, and the surface of the plated area of the aluminum substrate has an oblique corrugated structure, with the corrugated structure's texture arranged along the diagonal direction of the electrode.
[0007] Preferably, the first composite coating layer is deposited on the corrugated structure surface of the aluminum substrate. The first composite coating layer includes a first copper plating layer and a first aluminum plating layer that are distributed in a checkerboard pattern. The first copper plating layer and the first aluminum plating layer are filled into the surface of the corrugated structure in a conformal manner.
[0008] Preferably, the second composite coating layer is deposited on the upper surface of the first composite coating layer. The second composite coating layer includes a second copper plating layer and a second aluminum plating layer that are arranged in a checkerboard pattern. The positions of the squares in the second copper plating layer and the second aluminum plating layer correspond to the positions of the squares in the lower first copper plating layer and the first aluminum plating layer. The first copper plating layer corresponds to the second copper plating layer, and the first aluminum plating layer corresponds to the second aluminum plating layer.
[0009] Preferably, the third copper plating layer is a full-coverage continuous plating layer, which completely covers the upper surface of the second composite plating layer and serves as the surface functional layer of the electrode.
[0010] A method for fabricating an aluminum-based copper-plated electrode for an integrated circuit includes the following steps: S1: Industrial pure aluminum is used as the aluminum substrate and cut to the preset size; S2: Chemical degreasing, alkaline etching, first water washing, acid pickling and brightening, and second water washing are performed on the aluminum substrate to remove oil, natural oxide film and impurities from the surface of the aluminum substrate. S3: Surface activation of the aluminum substrate after secondary water washing to remove residual oxide film and improve the surface activity of the aluminum substrate; S4: Deposit a metal transition layer on the surface of the activated aluminum substrate; S5: A first composite coating layer and a second composite coating layer are sequentially prepared on the surface of the transition layer; the first composite coating layer and the second composite coating layer include copper coating and aluminum coating arranged at intervals. S6: Deposit a full-coverage top copper coating on the surface of the second composite coating layer; S7: The plated electrode is subjected to three water washing, drying and low-temperature stabilization treatments in sequence to obtain the finished aluminum-based copper-plated electrode.
[0011] Preferably, after the substrate is prepared, a diagonal corrugated structure extending along the diagonal direction of the electrode is processed on the surface of the plated area of the aluminum substrate by chemical etching; the tooth height of the diagonal corrugated structure is 5-20μm, the tooth pitch is 20-50μm, and the angle between the texture and the side of the electrode is 45°.
[0012] Preferably, the etching solution used in the chemical etching process is a mixture of phosphoric acid, nitric acid, and acetic acid. The etching temperature is 20-30°C, the etching time is 1-3 minutes, and the etching is followed by rinsing with deionized water for 30-60 seconds.
[0013] Preferably, the chemical degreasing uses an alkaline degreasing solution, the degreasing temperature is 40-60℃, and the degreasing time is 5-10 min; the alkaline degreasing solution includes 30-50 g / L sodium hydroxide, 10-20 g / L sodium carbonate, 5-10 g / L sodium phosphate, and 1-3 g / L surfactant.
[0014] Preferably, the activation treatment uses a fluorine-containing activation solution, the activation temperature is 20-30℃, and the activation time is 1-3 min; the fluorine-containing activation solution includes 5-10 g / L ammonium hydrogen fluoride, 1-3 g / L citric acid, and the pH value is controlled at 4.0-5.5.
[0015] The technical effects and advantages of this invention are as follows: In this invention, the oblique corrugated structure design on the surface of the aluminum substrate and the blocky composite coating layer arranged vertically with the same material disperse and release the interlayer shear stress caused by the thermal expansion difference between aluminum and copper, thus solving the problem of coating delamination and peeling. At the same time, while significantly reducing raw material costs and achieving device lightweighting, it ensures excellent conductivity, welding performance and long-term reliability of the electrodes. It can be fully adapted to semiconductor device application scenarios with high reliability requirements, providing a stable and feasible technical solution for the large-scale and industrialized implementation of "aluminum replacing copper" technology in the field of semiconductor electrodes. Attached Figure Description
[0016] The disclosure of this invention is illustrated with reference to the accompanying drawings. It should be understood that the drawings are for illustrative purposes only and are not intended to limit the scope of protection of this invention. In the drawings, the same reference numerals are used to refer to the same parts: Figure 1 This is a three-dimensional structural diagram of the present invention; Figure 2 This is a top view of the structure of the present invention; Figure 3 This is an exploded structural diagram of the present invention; Figure 4 This is a schematic diagram of the single-stage aluminum plating process of the present invention; Figure 5 This is a schematic diagram of the aluminum-plated corrugated structure of the present invention; Figure 6 This is a schematic diagram of the secondary aluminum plating of the present invention; Figure 7 This is a schematic diagram of a single copper plating operation according to the present invention; Figure 8 This is a metallographic image of the copper plating layer on the aluminum substrate surface of the present invention; Figure 9 Metallographic image of the aluminum coating layer of the present invention Figure 10 This is a metallographic image of the copper plating layer of the present invention.
[0017] Legend: 1. Aluminum base; 2. First copper plating layer; 3. First aluminum plating layer; 4. Second copper plating layer; 5. Second aluminum plating layer; 6. Third copper plating layer. Detailed Implementation
[0018] It is readily understood that, based on the technical solution of this invention, those skilled in the art can propose various interchangeable structural methods and implementations without altering the essential spirit of the invention. Therefore, the following detailed embodiments and accompanying drawings are merely illustrative examples of the technical solution of this invention and should not be considered as the entirety of the invention or as limitations or restrictions on the technical solution of this invention.
[0019] Reference Figure 1-10As shown, the present invention provides a technical solution: an aluminum-based copper-plated electrode for an integrated circuit, comprising an aluminum substrate 1, which serves as the substrate structure for the electrode. The surface of the plating area of the aluminum substrate 1 has an oblique corrugated structure, with the corrugated structure's texture arranged along the diagonal direction of the electrode. A first copper plating layer 2 and a first aluminum plating layer 3 are disposed on the surface of the aluminum substrate 1, forming a first composite coating layer. The first composite coating layer is deposited on the corrugated structure surface of the aluminum substrate 1. The first composite coating layer includes the first copper plating layer 2 and the first aluminum plating layer 3 arranged in a checkerboard pattern, which are filled into the corrugated structure surface. The first copper plating layer 2 and the first aluminum plating layer 3 are separated. A second copper plating layer 4 and a second aluminum plating layer 5 are disposed on the upper surface of the first copper plating layer 2 and the first aluminum plating layer 3, forming a second composite coating layer. The first composite coating layer consists of a first copper plating layer 2 and a second copper plating layer 4, and a first aluminum plating layer 3 and a second aluminum plating layer 5. A second composite coating layer is deposited on the upper surface of the first composite coating layer. The second composite coating layer includes a second copper plating layer 4 and a second aluminum plating layer 5 arranged in a checkerboard pattern. The position of the squares of the second copper plating layer 4 and the second aluminum plating layer 5 corresponds to the position of the squares of the first copper plating layer 2 and the first aluminum plating layer 3 in the lower layer. The first copper plating layer 2 corresponds to the second copper plating layer 4, and the first aluminum plating layer 3 corresponds to the second aluminum plating layer 5. A third copper plating layer 6 is provided on the upper surface of the second copper plating layer 4 and the second aluminum plating layer 5 as a third composite coating layer. The third copper plating layer 6 is a full-coverage continuous coating. The third copper plating layer 6 completely covers the upper surface of the second composite coating layer and serves as the surface functional layer of the electrode.
[0020] A method for fabricating an aluminum-based copper-plated electrode for an integrated circuit includes the following steps: S1: Industrial pure aluminum is used as the aluminum substrate and cut to the preset size; S2: Chemical degreasing, alkaline etching, first water washing, acid pickling and brightening, and second water washing are performed on the aluminum substrate to remove oil, natural oxide film and impurities from the surface of the aluminum substrate. After the substrate is prepared, a diagonal corrugated structure extending along the diagonal of the electrode is processed on the surface of the plated area of the aluminum substrate by chemical etching. The tooth height of the diagonal corrugated structure is 5-20μm, the tooth pitch is 20-50μm, and the angle between the texture and the side of the electrode is 45°. The etching solution for chemical etching is a mixture of phosphoric acid, nitric acid and acetic acid. The etching temperature is 20-30℃ and the etching time is 1-3min. After etching, the substrate is rinsed with deionized water for 30-60s.
[0021] Chemical degreasing uses an alkaline degreasing solution with a degreasing temperature of 40-60℃ and a degreasing time of 5-10 minutes. The alkaline degreasing solution includes 30-50 g / L sodium hydroxide, 10-20 g / L sodium carbonate, 5-10 g / L sodium phosphate, and 1-3 g / L surfactant.
[0022] S3: Surface activation of the aluminum substrate after secondary water washing to remove residual oxide film and improve the surface activity of the aluminum substrate; S4: Deposit a metal transition layer on the surface of the activated aluminum substrate. The metal transition layer is a zinc layer with a thickness of 0.1-1μm. After the activation treatment is completed, there is no need to wash with water. The transition layer plating process in step S4 is directly entered within 30 seconds to avoid secondary oxidation of the aluminum substrate surface.
[0023] The activation treatment uses a fluorine-containing activation solution, with an activation temperature of 20-30℃ and an activation time of 1-3 minutes. The fluorine-containing activation solution includes 5-10 g / L ammonium hydrogen fluoride and 1-3 g / L citric acid, with the pH value controlled at 4.0-5.5.
[0024] S5: The first composite coating layer and the second composite coating layer are sequentially prepared on the surface of the transition layer. After the first composite coating layer is prepared, it is rinsed with deionized water for 30-60 seconds, dried with nitrogen, and then the second composite coating layer is prepared. The interval between the two coating layers shall not exceed 5 minutes. The first and second composite coating layers include copper and aluminum coatings arranged alternately. The first and second copper coatings are prepared using an acidic sulfate copper plating process. The plating solution includes 180-220 g / L copper sulfate pentahydrate, 50-70 g / L sulfuric acid, and 50-100 mg / L chloride ions. The plating temperature is 20-30℃ and the current density is 1-3 A / dm².
[0025] S6: Deposit a full-coverage top copper coating on the surface of the second composite coating layer with a coating thickness of 1-5μm. After the coating is completed, the surface roughness Ra of the top copper coating is ≤0.2μm.
[0026] S7: The plated electrode is subjected to three water washing, drying and low-temperature stabilization treatments in sequence to obtain the finished aluminum-based copper-plated electrode. The low-temperature stabilization treatment is carried out in a vacuum or nitrogen protective atmosphere at a temperature of 100-150℃ and a holding time of 1-2 hours. After the holding time is completed, the electrode is cooled to room temperature in the furnace to eliminate the internal stress of the plating layer.
[0027] In the fabrication process of copper-plated electrodes on aluminum substrates for integrated circuits, existing technologies directly plate copper onto the surface of aluminum plates. This process is prone to delamination and peeling due to the inherent differences in the properties of aluminum and copper, which in turn damages the conductive path of the electrode, reduces conductivity, and compromises long-term reliability. To address these issues, this invention employs the following technical solution and operating principle: First, the surface of the aluminum substrate 1 is treated to form an oblique corrugated microstructure in the plating area of the aluminum substrate 1. Then, the surface of the aluminum substrate 1 is subjected to a first coating treatment to form a first composite coating layer. During the coating process, a first aluminum layer 3 is deposited on the corrugated structure surface, and then a first copper layer 2 is deposited at intervals on the surface of the aluminum substrate 1. The first copper layer 2 is arranged in an independent square shape and uniformly, and the first aluminum layer 3 separates and fills the gaps between adjacent first copper layers 2. After the first coating is completed, a second coating process is performed to form a second composite coating layer: a second aluminum coating layer 5 is deposited on the upper surface of the first aluminum coating layer 3, and a second copper coating layer 4 is deposited on the upper surface of the first copper coating layer 2. By performing two corresponding coatings, the overall thickness of the functional coating is increased, ensuring the density and film quality of the coating. At the same time, the risk of delamination at the interface of heterogeneous materials is greatly reduced by the vertical corresponding bonding of coatings of the same material. Among them, the design of the oblique corrugated structure on the surface of the aluminum substrate 1 can provide the aluminum substrate with directional deformation and extension space when the substrate is heated and expanded. At the same time, the oblique texture constrains the deformation direction and evenly disperses the interlayer shear stress caused by the difference in thermal expansion coefficients of aluminum and copper, thereby reducing the coating delamination problem caused by thermal expansion and contraction cycles from the root. After the second coating is completed, a third coating process is performed. A third copper coating 6 is deposited on the entire surface of the second copper coating 4 and the second aluminum coating 5. Through the full-coverage coating, the inner aluminum coating is isolated from the outside air and moisture, thus preventing the aluminum material from oxidizing and failing. Furthermore, the coating adopts a block-shaped, spaced-out design. The aluminum substrate 1, the first aluminum plating layer 3, and the second aluminum plating layer 5 are all made of aluminum, while the first copper plating layer 2, the second copper plating layer 4, and the third copper plating layer 6 are all made of copper. The lower surface of the third copper plating layer 6 is perfectly matched to the upper surface of the second composite coating layer, achieving a tight, gapless fit. Since the first copper plating layer 2 and the second copper plating layer 4, as well as the first aluminum plating layer 3 and the second aluminum plating layer 5, are deposited vertically and correspondingly of the same material, the coating interface has strong adhesion and high bonding strength. This not only significantly reduces the probability of heterogeneous interface delamination failure but also forms a vertically penetrating, low-resistance conductive path, ensuring the conductivity of the electrode. Regarding the heterogeneous material interface between the first copper plating layer 2 and the aluminum substrate 1, by designing the first copper plating layer 2 as an independent small block structure, the area of a single heterogeneous interface is significantly reduced. At the same time, the strong bonding system of the same material formed by the surrounding continuous first aluminum plating layer 3 and the aluminum substrate 1 creates a constraint and limit, further significantly reducing the risk of interface delamination between the first copper plating layer 2 and the aluminum substrate 1.
[0028] Working principle: Aluminum-based materials are used to replace traditional pure copper electrode materials, which reduces the cost of electrode raw materials from the source and enables lightweight design of semiconductor devices. At the same time, the oblique corrugated structure set on the surface of the aluminum substrate 1 along the diagonal of the electrode transforms the planar bonding between the aluminum substrate and the coating layer into a three-dimensional mechanical interlocking bonding. While significantly increasing the interlayer bonding area, it can simultaneously offset the thermal expansion stress in the X and Y directions. The overall tensile force generated by the thermal expansion of the aluminum substrate is transformed into a small elastic slip on the corrugated oblique surface, which evenly disperses and releases the interlayer shear stress caused by the difference in thermal expansion coefficients of aluminum and copper, thus avoiding the problem of coating cracking and peeling failure caused by stress concentration from the source.
[0029] During the coating preparation process, a first composite coating layer, a second composite coating layer, and a third copper coating layer 6 are sequentially deposited on the corrugated surface of the aluminum substrate 1. The first composite coating layer consists of a first copper coating layer 2 and a first aluminum coating layer 3 arranged in a checkerboard pattern. The second composite coating layer consists of a second copper coating layer 4 and a second aluminum coating layer 5 arranged in a checkerboard pattern. The first copper coating layer 2 and the second copper coating layer 4 are vertically aligned, as are the first aluminum coating layer 3 and the second aluminum coating layer 5. This structure, on the one hand, forms a continuous low-resistivity copper-based conductive pillar penetrating the electrode thickness through the vertically aligned copper coating layers, ensuring... The overall conductivity of the barrier electrode is close to that of a pure copper electrode, which fully meets the requirements of ohmic contact and high current conduction of integrated circuit devices. On the other hand, the vertically corresponding arrangement of the same material plating layers significantly reduces the risk of delamination at the interface of heterogeneous materials, ensuring the long-term stability of the plating bonding. Finally, the third copper plating layer 6 completely covers the surface of the second composite coating layer, which not only completely solves the industry pain points of easy oxidation and poor solderability of pure aluminum electrodes, improving the device soldering yield, but also forms a dense protective barrier to isolate external corrosive media. At the same time, it forms a complete three-dimensional conductive network with the lower copper-based conductive pillars, further optimizing the uniformity and stability of the electrode conductivity.
[0030] In the supporting preparation process, the oil and natural oxide film on the surface of the aluminum substrate 1 are thoroughly removed through chemical degreasing, alkaline etching, and acid pickling brightening processes, exposing a fresh active aluminum surface. Then, the ultra-thin oxide film generated after the pretreatment is further removed through activation treatment, and uniformly distributed active sites are formed on the surface of the aluminum substrate. Combined with the process design of no water washing after activation and rapid entry into the transition layer plating, the secondary oxidation of the aluminum surface is effectively avoided. Then, the bonding bridge between the aluminum substrate and the copper plating layer is built by depositing a metal transition layer, which completely solves the inherent defect of poor direct bonding between aluminum and copper.
[0031] Ultimately, through the coordinated efforts of the entire process and structural design, the industry pain points of existing aluminum-based copper-plated electrodes, such as easy peeling of the plating, high contact resistance, and insufficient reliability in long-term use, are comprehensively resolved.
[0032] The technical scope of this invention is not limited to the content described above. Those skilled in the art can make various modifications and variations to the above embodiments without departing from the technical concept of this invention, and all such modifications and variations should fall within the protection scope of this invention.
Claims
1. An aluminum-based copper-plated electrode for an integrated circuit, characterized in that, The material includes an aluminum substrate. A first copper plating layer and a first aluminum plating layer are formed on the surface of the aluminum substrate as a first composite coating layer. The first copper plating layer and the first aluminum plating layer are separated. A second copper plating layer and a second aluminum plating layer are formed on the upper surface of the first copper plating layer and the first aluminum plating layer as a second composite coating layer. The first copper plating layer and the second copper plating layer correspond to each other. The first aluminum plating layer and the second aluminum plating layer correspond to each other. A third copper plating layer is formed on the upper surface of the second copper plating layer and the second aluminum plating layer as a third composite coating layer.
2. The aluminum-based copper-plated electrode for the integrated circuit according to claim 1, characterized in that: The aluminum substrate is the base structure of the electrode, and the surface of the plated area of the aluminum substrate has an oblique corrugated structure, with the corrugated structure pattern arranged along the diagonal direction of the electrode.
3. The aluminum-based copper-plated electrode for the integrated circuit according to claim 1, characterized in that: The first composite coating layer is deposited on the corrugated structure surface of the aluminum substrate. The first composite coating layer includes a first copper plating layer and a first aluminum plating layer that are distributed in a checkerboard pattern. The first copper plating layer and the first aluminum plating layer are filled into the surface of the corrugated structure in a conformal manner.
4. The aluminum-based copper-plated electrode for the integrated circuit according to claim 1, characterized in that: The second composite coating layer is deposited on the upper surface of the first composite coating layer. The second composite coating layer includes a second copper plating layer and a second aluminum plating layer that are distributed in a checkerboard pattern. The positions of the squares of the second copper plating layer and the second aluminum plating layer correspond to the positions of the squares of the lower first copper plating layer and the first aluminum plating layer. The first copper plating layer corresponds to the second copper plating layer, and the first aluminum plating layer corresponds to the second aluminum plating layer.
5. The aluminum-based copper-plated electrode for the integrated circuit according to claim 1, characterized in that: The third copper plating layer is a full-coverage continuous plating film, which completely covers the upper surface of the second composite plating film layer and serves as the surface functional layer of the electrode.
6. The method for preparing an aluminum-based copper-plated electrode for an integrated circuit according to any one of claims 1-5, characterized in that: Includes the following steps: S1: Industrial pure aluminum is used as the aluminum substrate and cut to the preset size; S2: Chemical degreasing, alkaline etching, first water washing, acid pickling and brightening, and second water washing are performed on the aluminum substrate to remove oil, natural oxide film and impurities from the surface of the aluminum substrate. S3: Surface activation of the aluminum substrate after secondary water washing to remove residual oxide film and improve the surface activity of the aluminum substrate; S4: Deposit a metal transition layer on the surface of the activated aluminum substrate; S5: A first composite coating layer and a second composite coating layer are sequentially prepared on the surface of the transition layer; the first composite coating layer and the second composite coating layer include copper coating and aluminum coating arranged at intervals. S6: Deposit a full-coverage top copper coating on the surface of the second composite coating layer; S7: The plated electrode is subjected to three water washing, drying and low-temperature stabilization treatments in sequence to obtain the finished aluminum-based copper-plated electrode.
7. The method for preparing an aluminum-based copper-plated electrode for an integrated circuit according to claim 6, characterized in that: After the substrate is prepared, a diagonal corrugated structure extending along the diagonal direction of the electrode is processed on the surface of the plated area of the aluminum substrate by chemical etching; the tooth height of the diagonal corrugated structure is 5-20μm, the tooth pitch is 20-50μm, and the angle between the texture and the side of the electrode is 45°.
8. The method for preparing an aluminum-based copper-plated electrode for an integrated circuit according to claim 7, characterized in that: The etching solution used in the chemical etching process is a mixture of phosphoric acid, nitric acid, and acetic acid. The etching temperature is 20-30℃, the etching time is 1-3 minutes, and after etching, the sample is rinsed with deionized water for 30-60 seconds.
9. The method for preparing an aluminum-based copper-plated electrode for an integrated circuit according to claim 6, characterized in that: The chemical degreasing uses an alkaline degreasing solution, with a degreasing temperature of 40-60℃ and a degreasing time of 5-10 minutes. The alkaline degreasing solution includes 30-50 g / L sodium hydroxide, 10-20 g / L sodium carbonate, 5-10 g / L sodium phosphate, and 1-3 g / L surfactant.
10. The method for preparing an aluminum-based copper-plated electrode for an integrated circuit according to claim 6, characterized in that: The activation treatment uses a fluorine-containing activation solution, with an activation temperature of 20-30℃ and an activation time of 1-3 minutes; the fluorine-containing activation solution includes 5-10 g / L ammonium hydrogen fluoride, 1-3 g / L citric acid, and a pH value controlled at 4.0-5.5.