A silicon-based OLED display device and a preparation method and application thereof

Abstract

This invention provides a silicon-based OLED display device, its fabrication method, and its application. The fabrication method includes the following steps: providing a pixel substrate, comprising a silicon substrate and a plurality of pixel anodes disposed on the silicon substrate; sequentially fabricating a hole transport region, a light-emitting layer, an electron transport region, and a cathode on the pixel substrate to obtain an OLED device; fabricating an encapsulation layer on the cathode of the OLED device to obtain an encapsulated device; and subjecting the pixel gaps of the encapsulated device to ultraviolet irradiation treatment to obtain a silicon-based OLED display device. The hole transport region comprises a hole transport material with the structure shown in Formula I, which undergoes a photochemical reaction after ultraviolet irradiation treatment, causing a change in conductivity, thereby reducing current crosstalk between pixels and giving the silicon-based OLED display device a better display effect. The fabrication method requires no complex procedures, is simple in process, and is suitable for large-scale applications.

Description

Technical Field

[0001] This invention belongs to the field of display technology, specifically relating to a silicon-based OLED display device, its fabrication method, and its application. Background Technology

[0002] Organic Light-Emitting Diode (OLED) technology uses silicon chips as a substrate. Compared with traditional AMOLED display technology, silicon-based OLED microdisplays have smaller pixel sizes and higher integration, which can meet the performance requirements of near-eye display products. It has broad application prospects in current virtual reality (VR) and augmented reality (AR) products.

[0003] In the fabrication of silicon-based microdisplays, white OLEDs are typically deposited in the anode display area using vapor deposition, combined with a color filter to form a full-color display. Because the organic material in the anode display area is deposited using a common mask, there is continuity between the OLEDs of the anode pixels, leading to lateral crosstalk issues. Furthermore, the lateral conductivity of P-doped materials further exacerbates current crosstalk between pixels, affecting the purity of RGB colors and impacting the product's color gamut.

[0004] CN117042484A discloses a silicon-based OLED display panel for improving optical crosstalk, including a substrate and anodes spaced apart thereon, a pixel definition layer disposed between adjacent anodes, and a light-emitting layer covering the anodes and pixel definition layers. The light-emitting layer on the pixel definition layer is disconnected from the light-emitting layer on the anode. In the fabrication of this silicon-based OLED display panel, the anodes are fabricated by Halftone etching and over-etching processes to form an anode with an undercut profile, causing the pixel definition layer to be concave at the edge of the anode. Alternatively, by fabricating a thicker anode with a concave center, a stepped pixel definition layer is formed, causing the light-emitting layer to break, thus solving the problem of lateral crosstalk. CN214477464U discloses an anti-crosstalk OLED display panel structure, including a driving circuit layer, a sub-pixel definition layer, a light-emitting layer, a cathode film layer, and an encapsulation layer arranged sequentially from the inside out. The driving circuit layer includes a substrate and multiple anodes disposed thereon. A sub-pixel definition layer and / or a disconnection isolation region are disposed between two adjacent anodes. A disconnection isolation region is disposed between two sub-pixel definition layers. This enables automatic disconnection of the light-emitting layer and cathode film layer in some areas, reduces the transmission path of lateral current, and improves electrical crosstalk.

[0005] In existing silicon-based OLED display panels, crosstalk issues are typically addressed by breaking the light-emitting layer. However, this method leads to a more complex overall structure and fabrication process, requiring more sophisticated manufacturing techniques and posing significant challenges for large-scale applications. Therefore, developing a simpler method to improve lateral crosstalk in silicon-based OLEDs is a pressing issue in this field. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the present invention aims to provide a silicon-based OLED display device, its fabrication method, and its applications. By employing a specific hole transport material, which undergoes a photochemical reaction after ultraviolet irradiation, its conductivity changes, thereby reducing current crosstalk between pixels and resulting in a better display effect for the silicon-based OLED display device. The fabrication method requires no complex procedures, is simple in process, and is suitable for large-scale applications.

[0007] To achieve this objective, the present invention employs the following technical solution: In a first aspect, the present invention provides a method for fabricating a silicon-based OLED display device, the method comprising the following steps: A pixel substrate is provided, the pixel substrate including a silicon substrate and a plurality of pixel anodes disposed on the silicon substrate; the gap between any two adjacent pixel anodes is a pixel gap; An OLED device is obtained by sequentially fabricating a hole transport region, an emissive layer, an electron transport region, and a cathode on the pixel substrate; the hole transport region includes a hole transport material with the structure shown in Formula I. Formula I; An encapsulation layer is fabricated on the cathode of the OLED device to obtain an encapsulated device; The pixel gaps of the packaged device are subjected to ultraviolet irradiation to obtain the silicon-based OLED display device.

[0008] This invention employs a hole transport material with the structure shown in Formula I, which undergoes a photochemical reaction under ultraviolet light irradiation, altering the material's energy level structure and reducing its charge transport capability. By subjecting the pixel gaps of the packaged device to ultraviolet irradiation, the hole transport material located in these gaps undergoes a photochemical reaction, changing its conductivity and increasing its resistance. This improves current crosstalk between pixels, resulting in a silicon-based OLED display device with high color purity and better display performance. The fabrication method of this invention does not require complex instruments and / or processes, has high compatibility with existing silicon-based OLED processes, is simple, and does not complicate the device structure, making it suitable for large-scale applications.

[0009] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The purpose and beneficial effects of the present invention can be better achieved and realized through the following preferred technical solutions.

[0010] As a preferred embodiment of the present invention, the hole transport region includes a hole transport layer, an optional hole injection layer, and an optional electron blocking layer; the hole transport layer includes a hole transport material with the structure shown in Formula I.

[0011] As a preferred embodiment of the present invention, the hole transport layer further includes a P-type doped material.

[0012] As a preferred embodiment of the present invention, the mass content of the P-type doped material in the hole transport layer is 0.1-10%.

[0013] As a preferred embodiment of the present invention, the thickness of the hole transport layer is 100-150 nm.

[0014] As a preferred embodiment of the present invention, the thickness of the light-emitting layer is 5-60 nm.

[0015] As a preferred embodiment of the present invention, the electron transport region includes an electron transport layer, an optional electron injection layer, and an optional hole blocking layer.

[0016] As a preferred embodiment of the present invention, the thickness of the cathode is 1-20 nm.

[0017] As a preferred embodiment of the present invention, the ultraviolet irradiation treatment method includes: A photomask is disposed on one side of the encapsulation layer of the encapsulation device. The photomask includes an opening area, which is aligned with the pixel gap. The packaged device is treated with an ultraviolet irradiation device, so that ultraviolet light passes through the opening area to irradiate the pixel gap, thereby obtaining a silicon-based OLED display device.

[0018] As a preferred embodiment of the present invention, the wavelength of the ultraviolet irradiation is 360-370 nm.

[0019] As a preferred embodiment of the present invention, the power of the ultraviolet irradiation is 10-80%.

[0020] As a preferred embodiment of the present invention, the ultraviolet irradiation time is 10-300 s.

[0021] In a second aspect, the present invention provides a silicon-based OLED display device, which is prepared by the preparation method described in the first aspect.

[0022] Thirdly, the present invention provides a display device, the display device comprising the silicon-based OLED display device as described in the second aspect.

[0023] Fourthly, the present invention provides a method for improving lateral crosstalk in a silicon-based OLED display device, the method comprising: fabricating a silicon-based OLED display device using the fabrication method described in the first aspect.

[0024] Compared with the prior art, the present invention has at least the following beneficial effects: The method for fabricating a silicon-based OLED display device provided by this invention employs a hole transport material with a specific structure. After ultraviolet irradiation, this material undergoes a photochemical reaction, altering the conductivity of the material located between pixels and increasing its resistance. This effectively reduces current crosstalk between pixels, resulting in a silicon-based OLED display device with high color purity and better display performance. The fabrication method of this invention has high compatibility with existing silicon-based OLED processes, is simple, and does not complicate the device structure, making it suitable for large-scale applications. Attached Figure Description

[0025] Figure 1 This is a schematic diagram illustrating the fabrication method of the silicon-based OLED display device provided in Example 1; Among them, 1-pixel anode, 2-OLED organic layer, 3-metal cathode, 4-encapsulation layer, 5-pixel gap, and 6-photomask. Detailed Implementation

[0026] To facilitate understanding of the present invention, specific embodiments are provided to further illustrate the technical solution of the present invention. Those skilled in the art should understand that the embodiments are merely illustrative of the present invention and should not be considered as specific limitations thereof.

[0027] The terms “comprising,” “including,” “having,” “containing,” or any other variations thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, step, method, or apparatus that includes the listed elements is not necessarily limited to those elements, but may also include other elements not expressly listed or elements inherent to such a composition, step, method, or apparatus. Unless otherwise stated, singular terms may include plural forms and should not be construed as having a quantity of one.

[0028] In this invention, features specified as "first" and "second" may explicitly or implicitly include one or more of these features, used to distinguish and describe features, without any order or emphasis. In the description of this invention, unless otherwise stated, "multiple" means two or more.

[0029] In this invention, the terms "upper," "lower," "inner," "outer," "vertical," and "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. They should not be construed as limitations on this invention.

[0030] In this invention, unless otherwise explicitly specified and limited, terms such as "connected," "linked," "installed," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meanings of the above terms within this invention according to the specific circumstances.

[0031] In silicon-based microdisplays, white OLEDs are deposited in the anode display area and paired with color filters to form a full-color display. Since the organic material in the anode display area is deposited using a common mask, there is continuity between the OLED pixels. The lateral conductivity of the P-type doped material further causes current crosstalk between pixels, affecting the purity of RGB colors and thus the product's color gamut.

[0032] To address the aforementioned technical problems, one specific embodiment of the present invention provides a method for fabricating a silicon-based OLED display device, the method comprising the following steps: A pixel substrate is provided, the pixel substrate including a silicon substrate and a plurality of pixel anodes disposed on the silicon substrate; the gap between any two adjacent pixel anodes is a pixel gap; An OLED device is obtained by sequentially fabricating a hole transport region, an emissive layer, an electron transport region, and a cathode on the pixel substrate; the hole transport region includes a hole transport material with the structure shown in Formula I. Formula I; An encapsulation layer is fabricated on the cathode of the OLED device to obtain an encapsulated device; The pixel gaps of the packaged device are subjected to ultraviolet irradiation to obtain the silicon-based OLED display device.

[0033] This invention reveals that the hole transport material with the structure shown in Formula I exhibits photoreactivity. Since the wavelength of ultraviolet light is shorter than that of visible light and the photons have higher energy, the chemical bond energy of the hole transport material corresponds to the energy of the ultraviolet photons. Upon absorbing ultraviolet light, it undergoes a photochemical reaction, altering the material's energy level structure and reducing its charge transport capability. This invention utilizes ultraviolet irradiation to treat the pixel gaps of the packaged device, causing the hole transport material located in the pixel gaps to undergo a photochemical reaction. This alters the material's conductivity, increases its resistance, and significantly reduces current crosstalk between pixels. The resulting silicon-based OLED display device possesses high color purity and color gamut, achieving excellent display performance. The fabrication method of this invention does not require complex instruments and processes, is well-matched to existing silicon-based OLED manufacturing processes, has a simple fabrication process, and does not complicate the device structure, making it suitable for large-scale applications.

[0034] In this invention, the pixel substrate includes a silicon substrate and a plurality of pixel anodes disposed on the silicon substrate. The silicon substrate can be monocrystalline silicon. This invention does not impose any particular limitation on the preparation method of the pixel substrate; any pixel substrate known in the art that can be used in silicon-based OLED display devices is applicable to this invention.

[0035] In this invention, the methods for preparing the hole transport region, the light-emitting layer, the electron transport region, and the cathode are not specifically limited. Any method known in the art that can form the hole transport region, the light-emitting layer, the electron transport region, and the cathode is applicable to this invention.

[0036] For example, the hole transport region, light-emitting layer, electron transport region, and cathode are prepared by vapor deposition, such as common mask vapor deposition.

[0037] In a preferred embodiment, the hole transport region includes a hole transport layer, an optional hole injection layer, and an optional electron blocking layer; the hole transport layer includes a hole transport material with the structure shown in Formula I.

[0038] Optionally, the hole transport region includes a hole injection layer located between the hole transport layer and the pixel anode.

[0039] Optionally, the hole transport region includes an electron blocking layer located between the hole transport layer and the light-emitting layer.

[0040] In a preferred embodiment, the hole transport layer further includes a P-type doped material.

[0041] In a preferred embodiment, the mass content of the P-type doped material in the hole transport layer is 0.1-10%, for example, it can be 0.2%, 0.5%, 0.8%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5.5%, 6%, 6.5%, 7%, 7.5%, 8%, 8.5%, 9%, or 9.5%, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0042] Preferably, the P-type dopant is an organic P-type dopant and / or an inorganic P-type dopant, including but not limited to: tungsten oxide, molybdenum oxide, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), 7,7,8,8-tetracyano-p-benzoquinone dimethane (TCNQ), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-p-benzoquinone dimethane (F4-TCNQ), and 1,3,4,5,7,8-hexafluoro-tetracyano-dimethyl-p-naphthoquinone (F6-TNAP).

[0043] In a preferred embodiment, the thickness of the hole transport layer is 100-150 nm, for example, it can be 105 nm, 110 nm, 115 nm, 120 nm, 125 nm, 130 nm, 135 nm, 140 nm or 145 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0044] In a preferred embodiment, the thickness of the light-emitting layer is 5-60 nm, for example, it can be 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm or 55 nm, and specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but 15-50 nm is preferred.

[0045] In this invention, the light-emitting layer can employ different light-emitting technologies such as fluorescent electroluminescence, phosphorescent electroluminescence, and thermally activated delayed fluorescence. The light-emitting layer comprises a host material and a luminescent dye (also known as a "guest material" or "doped material"); depending on the technology, the luminescent dye includes phosphorescent dyes, fluorescent dyes, thermally activated delayed fluorescence dyes, etc. This invention does not impose specific limitations on the host material or luminescent dye of the light-emitting layer; any materials known in the art that can be used in OLED light-emitting layers are applicable to this invention.

[0046] In a preferred embodiment, the electron transport region includes an electron transport layer, an optional electron injection layer, and an optional hole blocking layer.

[0047] Optionally, the electron transport region includes an electron injection layer located between the electron transport layer and the cathode.

[0048] Optionally, the electron transport region includes a hole blocking layer located between the electron transport layer and the light-emitting layer.

[0049] In a preferred embodiment, the thickness of the electron transport layer is 5-80 nm, for example, it can be 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm or 75 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0050] In this invention, the electron transport region (electron transport layer) uses an electron transport material that easily receives electrons from the cathode and transfers the received electrons to the light-emitting layer. This invention does not impose any special limitations on the electron transport material; any electron transport material known in the art that can be used in OLEDs is applicable to this invention.

[0051] For example, the electron transport material includes any one or a combination of at least two of the following: metal complexes of hydroxyquinoline derivatives (e.g., Alq3, BAlq), triazole derivatives, triazine derivatives, imidazole derivatives, oxadiazole derivatives, thiadiazole derivatives, quinoxaline derivatives, phenanthroline derivatives, and silicon-based compound derivatives.

[0052] In a preferred embodiment, the thickness of the cathode is 1-20 nm, for example, it can be 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 12 nm, 14 nm, 15 nm, 16 nm or 18 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but preferably 5-15 nm.

[0053] This invention does not impose any special limitations on the cathode material; any material known in the art that can be used for OLED cathodes is applicable to this invention.

[0054] For example, the cathode is a metal cathode, the material of which is for example including but not limited to: any one or at least two of Al, Mg, Ag, Yb, Ca, Mg-Ag, Al-Li, and Mg-In.

[0055] This invention does not impose any special limitations on the material of the encapsulation layer. Any material known in the art that can be used for OLED encapsulation layers is applicable to this invention.

[0056] In a preferred embodiment, the ultraviolet irradiation treatment method includes: A photomask is disposed on one side of the encapsulation layer of the encapsulation device. The photomask includes an opening area, which is aligned with the pixel gap. The packaged device is treated with an ultraviolet irradiation device, so that ultraviolet light passes through the opening area to irradiate the pixel gap, thereby obtaining a silicon-based OLED display device.

[0057] For example, the ultraviolet irradiation device is the ultraviolet irradiation device of a lithography machine.

[0058] Optionally, the ultraviolet irradiation device includes a micron-level alignment device (alignment accuracy ≤ 0.2 μm).

[0059] In a preferred embodiment, the wavelength of the ultraviolet irradiation is 360-370 nm, for example, it can be 361 nm, 362 nm, 363 nm, 364 nm, 365 nm, 366 nm, 367 nm, 368 nm or 369 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0060] In a preferred embodiment, the power of the ultraviolet irradiation is 10-80%, for example, it can be 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70% or 75%, and specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0061] In a preferred embodiment, the ultraviolet irradiation time is 10-300 s, for example, it can be 20 s, 30 s, 40 s, 50 s, 60 s, 80 s, 100 s, 120 s, 140 s, 150 s, 160 s, 180 s, 200 s, 220 s, 240 s, 250 s, 260 s or 280 s, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0062] Another specific embodiment of the present invention provides a silicon-based OLED display device, which is prepared by the preparation method provided in the foregoing specific embodiments.

[0063] Another specific embodiment of the present invention provides a display device, the display device including the silicon-based OLED display device provided in the foregoing specific embodiments.

[0064] Another specific embodiment of the present invention provides a method for improving lateral crosstalk in a silicon-based OLED display device, the method comprising: fabricating a silicon-based OLED display device using the fabrication method provided in the foregoing specific embodiments.

[0065] The silicon-based OLED display device and its fabrication method of the present invention will be described in detail below using the following embodiments as examples, but the silicon-based OLED display device and its fabrication method are not limited to the following embodiments.

[0066] Example 1 A silicon-based OLED display device and its fabrication method are disclosed, wherein a schematic diagram of the fabrication method is shown below. Figure 1 As shown, 1 represents the pixel anode; 2 represents the organic layer of the OLED, including a hole transport layer, an emissive layer and an electron transport layer arranged sequentially; 3 represents the metal cathode; 4 represents the encapsulation layer; 5 represents the pixel gap between two adjacent pixel anodes; and 6 represents the photomask.

[0067] The preparation method includes the following steps: (1) A pixel substrate is provided, the pixel substrate including a silicon substrate and a plurality of pixel anodes disposed on the silicon substrate; the gap between any two adjacent pixel anodes is a pixel gap; (2) The hole transport material and P-type doped material (F4-TCNQ, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinone dimethyl ether) of the pixel substrate structure shown in step (1) are vapor-deposited to make the mass content of the P-type doped material 3% to obtain a hole transport layer with a thickness of 130 nm. (3) A light-emitting layer with a thickness of 30 nm is prepared by vapor deposition on the hole transport layer obtained in step (2). The host material of the light-emitting layer is CBP (4,4'-bis(9-carbazole)biphenyl) and the guest material is Ir(ppy)3 (tris(2-phenylpyridine)iridium). (4) TPBi (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene) is deposited on the light-emitting layer obtained in step (3) to prepare an electron transport layer with a thickness of 30 nm; (5) A metal cathode (Mg:Ag, magnesium-silver alloy) with a thickness of 12 nm is deposited on the electron transport layer obtained in step (4) to obtain an OLED device; (6) The OLED device obtained in step (5) is encapsulated with a thin film to form an encapsulation layer, thereby obtaining an encapsulated device; (7) A photomask is provided on one side of the encapsulation layer of the encapsulation device obtained in step (6). The photomask includes an opening area. The opening area is aligned with the pixel gap using a micron-level alignment device (alignment accuracy ≤ 0.2 μm). The encapsulation device is treated with an ultraviolet irradiation device so that ultraviolet light passes through the opening area to irradiate the pixel gap. The ultraviolet light wavelength of the ultraviolet irradiation is 365 nm, the power is 20%, and the irradiation time is 180 s. This changes the conductivity of the hole transport material in the pixel gap, thus obtaining the silicon-based OLED display device (monochrome blue light device).

[0068] The test was conducted using a Keithley 2400 power supply with a test current of 0.9 mA. The voltage before and after UV irradiation was measured. The test results showed that the voltage before UV irradiation (i.e., the packaged device) was 4.55 V, and the voltage of the silicon-based OLED display device after UV irradiation was 4.68 V. This indicates that UV irradiation changes the conductivity of the hole transport material located between pixels, increases the resistance, and thus reduces current crosstalk between pixels.

[0069] Example 2 A silicon-based OLED display device and its fabrication method, the fabrication method comprising the following steps: (1) A pixel substrate is provided, the pixel substrate including a silicon substrate and a plurality of pixel anodes disposed on the silicon substrate; the gap between any two adjacent pixel anodes is a pixel gap; (2) The hole transport material and P-type doped material (F4-TCNQ) of the structure shown in the pixel substrate obtained in step (1) are vapor-deposited, so that the mass content of the P-type doped material is 3%, and a hole transport layer with a thickness of 130 nm is obtained. (3) A light-emitting layer with a thickness of 30 nm is prepared by vapor deposition on the hole transport layer obtained in step (2). The host material of the light-emitting layer is CBP and the guest material is Ir(ppy)3. (4) TPBi is deposited on the light-emitting layer obtained in step (3) to prepare an electron transport layer with a thickness of 30 nm; (5) A metal cathode (Mg:Ag) with a thickness of 12 nm is deposited on the electron transport layer obtained in step (4) to obtain an OLED device; (6) The OLED device obtained in step (5) is encapsulated with a thin film to form an encapsulation layer, thereby obtaining an encapsulated device; (7) A photomask is provided on one side of the encapsulation layer of the encapsulation device obtained in step (6). The photomask includes an opening area. The opening area is aligned with the pixel gap using a micron-level alignment device (alignment accuracy ≤ 0.2 μm). The encapsulation device is treated with an ultraviolet irradiation device so that ultraviolet light passes through the opening area to irradiate the pixel gap. The ultraviolet light wavelength of the ultraviolet irradiation is 365 nm, the power is 50%, and the irradiation time is 180 s. This changes the conductivity of the hole transport material in the pixel gap, thus obtaining the silicon-based OLED display device (monochrome blue light device).

[0070] The voltage before and after ultraviolet irradiation was tested using the same method as in Example 1. The test results showed that the voltage before ultraviolet irradiation (i.e., the encapsulated device) was 4.56 V, and the voltage of the silicon-based OLED display device after ultraviolet irradiation was 4.92 V. This indicates that ultraviolet irradiation changes the conductivity of the hole transport material located between pixels, increases the resistance, and reduces current crosstalk between pixels.

[0071] Comparative Example 1 A silicon-based OLED display device and its fabrication method are disclosed. The difference between the fabrication method and Example 1 is that the hole transport material in step (2) is 4,4'-bis(9-carbazole)biphenyl ( Other materials, process steps and parameters are the same as in Example 1.

[0072] The voltage before and after ultraviolet irradiation was tested using the same method as in Example 1. The test results showed that the voltage of the silicon-based OLED display device before (i.e., the encapsulated device) and after ultraviolet irradiation did not change significantly, indicating that ultraviolet irradiation did not change the conductivity. It can be seen that the use of 4,4'-bis(9-carbazole)biphenyl as hole transport material in Comparative Example 1 cannot change the conductivity under ultraviolet irradiation, and therefore cannot solve the problem of current crosstalk between pixels.

[0073] The present invention has been illustrated through the above embodiments, but the present invention is not limited to the above process steps, that is, it does not mean that the present invention must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions of the raw materials used in the present invention, additions of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for fabricating a silicon-based OLED display device, characterized in that, The preparation method includes the following steps: A pixel substrate is provided, the pixel substrate including a silicon substrate and a plurality of pixel anodes disposed on the silicon substrate; the gap between any two adjacent pixel anodes is a pixel gap; An OLED device is obtained by sequentially fabricating a hole transport region, an emissive layer, an electron transport region, and a cathode on the pixel substrate; the hole transport region includes a hole transport material with the structure shown in Formula I. Equation I; An encapsulation layer is fabricated on the cathode of the OLED device to obtain an encapsulated device; The pixel gaps of the packaged device are subjected to ultraviolet irradiation to obtain the silicon-based OLED display device.

2. The preparation method according to claim 1, characterized in that, The hole transport region includes a hole transport layer, an optional hole injection layer, and an optional electron blocking layer; the hole transport layer includes a hole transport material with the structure shown in Formula I.

3. The preparation method according to claim 2, characterized in that, The hole transport layer also includes a P-type doped material; Preferably, the mass content of the P-type doped material in the hole transport layer is 0.1-10%.

4. The preparation method according to claim 2 or 3, characterized in that, The thickness of the hole transport layer is 100-150 nm.

5. The preparation method according to any one of claims 1-4, characterized in that, The thickness of the light-emitting layer is 5-60 nm; And / or, the electron transport region includes an electron transport layer, an optional electron injection layer, and an optional hole blocking layer; And / or, the thickness of the cathode is 1-20 nm.

6. The preparation method according to any one of claims 1-5, characterized in that, The ultraviolet irradiation treatment method includes: A photomask is disposed on one side of the encapsulation layer of the encapsulation device. The photomask includes an opening area, which is aligned with the pixel gap. The packaged device is treated with an ultraviolet irradiation device, so that ultraviolet light passes through the opening area to irradiate the pixel gap, thereby obtaining a silicon-based OLED display device.

7. The preparation method according to any one of claims 1-6, characterized in that, The wavelength of the ultraviolet irradiation is 360-370 nm; And / or, the power of the ultraviolet irradiation is 10-80%; And / or, the duration of the ultraviolet irradiation is 10-300 s.

8. A silicon-based OLED display device, characterized in that, The silicon-based OLED display device is prepared by the preparation method described in any one of claims 1-7.

9. A display device, characterized in that, The display device includes the silicon-based OLED display device as described in claim 8.

10. A method for improving lateral crosstalk in silicon-based OLED display devices, characterized in that, The method includes: preparing a silicon-based OLED display device using the preparation method described in any one of claims 1-7.

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