Semiconductive shielding material, method of making and use thereof, and cable
By introducing components such as matrix resin, carbon black, and nickel-plated graphite into the semiconductive shielding material, a stable composite conductive network is constructed, which solves the problems of easy fracture and small molecule migration under stress in traditional materials, and achieves long-term stability of resistivity and improved anti-migration ability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ELECTRIC POWER RES INST CHINA SOUTHERN POWER GRID CO LTD
- Filing Date
- 2026-06-08
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional semiconductive shielding materials used in ultra-high voltage cables are prone to breakage of the conductive network under stress such as bending and thermal expansion, leading to increased resistivity. Furthermore, the migration of small molecules may cause catastrophic failures, resulting in insufficient anti-migration and stress resistance properties.
By using a matrix resin, carbon black, nickel-plated graphite, dispersant, plasticizer, antioxidant, and crosslinking agent, and controlling the composition and dosage of each component, a highly stable composite conductive network is constructed. The sheet-like structure of the nickel-plated graphite forms a physical barrier layer, which synergistically enhances the effect, ensures stable resistivity, and extends the migration path of small molecules.
It significantly improves the conductivity, anti-migration properties, and stress resistance of semiconductive shielding materials, ensuring long-term resistivity stability, avoiding electric field distortion, and meeting the long-term operation requirements of ultra-high voltage cables.
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