Silicon wafer alignment method, apparatus and master

By using sensors to detect light signals to determine the relative position of the silicon wafer and the photomask, and combining this with the initial deviation correction to align the silicon wafer, the problem of exposure end deviation caused by silicon wafer slippage in the lithography machine is solved, thus achieving accurate silicon wafer positioning and improving lithography precision.

CN122410909APending Publication Date: 2026-07-17SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO LTD
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Patent Information

Application Number
CN202510073139.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-16
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In a lithography machine, the silicon wafer may slip during the process from the measurement end to the exposure end, resulting in a horizontal deviation at the exposure end. Existing technologies cannot effectively solve this problem.

Method used

A standard wafer equipped with a sensor is used. Light is controlled to pass through the photomask and illuminate the standard wafer and the workpiece stage. The relative positions of the workpiece stage and the photomask, as well as the standard wafer and the photomask, are determined when the sensor detects the strongest light signal. Combined with the initial position deviation, the position deviation between the silicon wafer to be aligned and the workpiece stage is calculated and corrected.

Benefits of technology

This effectively avoids deviations in the silicon wafer at the exposure end, ensures accurate positioning of the silicon wafer and the workpiece stage, and improves the precision of the photolithography process.

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Abstract

The application relates to the field of photoetching, and discloses a silicon wafer alignment method, a device and a standard wafer. The method comprises the following steps: when a standard wafer is moved from a measuring end to an exposure end along a workpiece table of a photoetching machine, controlling light to be irradiated to the standard wafer and the workpiece table through a photo mask; determining the relative position of the workpiece table and the photo mask; determining the relative position of the standard wafer and the photo mask; determining the relative position of the standard wafer and the workpiece table according to the relative position of the workpiece table and the photo mask and the relative position of the standard wafer and the photo mask; determining the position deviation of the standard wafer and the workpiece table according to the initial position deviation of the standard wafer at the measuring end and the workpiece table and the relative position of the standard wafer and the workpiece table; determining the position deviation of a to-be-aligned silicon wafer and the workpiece table based on the position deviation, and aligning the to-be-aligned silicon wafer. The method obtains the position deviation of the standard wafer and the workpiece table by means of the standard wafer, and then aligns the to-be-aligned silicon wafer based on the position deviation, so that the to-be-aligned silicon wafer can be prevented from generating deviation at the exposure end.
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