Method for depositing a silicon oxide thin film on a semiconductor substrate and method for manufacturing a semiconductor device comprising the method
By using amine-based fluorocarbons as inhibitors and combining physical and chemical adsorption techniques, the problems of long process time and uneven surface adsorption in the existing technology of regional selective atomic layer deposition have been solved, and high-precision silicon oxide thin film deposition has been achieved, which is suitable for the fabrication of semiconductor devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SK MATERIALS CO LTD
- Filing Date
- 2024-10-17
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies using self-assembled monolayer (SAM) inhibitors for region-selective atomic layer deposition suffer from problems such as long processing times, uneven surface adsorption, and difficulty in achieving ultra-precision semiconductor devices.
Using amine-based fluorocarbons as inhibitors, selective atomic layer deposition of silicon oxide thin films is achieved by physical and chemical adsorption onto semiconductor substrates, combined with the removal of inhibitors by purge gas.
This technology improves the selectivity and process efficiency of thin film deposition, enabling high-precision silicon oxide thin film deposition, which is suitable for the fabrication of semiconductor devices such as dynamic random access memory (DRAM), static random access memory (SRAM), and NAND flash memory.
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Figure CN122423352A_ABST