High-frequency oscillation field source device high-durability anti-aging structure

By adding a flexible damping buffer layer at the bottom of the piezoelectric ceramic oscillator and depositing a low-stress flexible film on the inner wall of the cavity, combined with silicon-based lightweight control, the problems of lattice fatigue and material aging of high-frequency oscillation devices are solved, extending the equipment life and maintaining the stability of field wave output.

CN122437513APending Publication Date: 2026-07-21宋伟光
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
宋伟光
Filing Date
2026-04-27
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

High-frequency oscillating devices in field computing computers are prone to lattice fatigue, resonant point shift, and sensitivity decay. High-frequency field reflection within the cavity leads to localized stress concentration and material aging. Existing anti-aging structures cannot simultaneously ensure device durability and field wave output.

Method used

A flexible damping buffer layer is added to the bottom of the piezoelectric ceramic oscillator, and an elastic encapsulation structure is adopted on the outside. The inner wall of the cavity is coated with a low-stress flexible transition film and filled with a low-pressure inert buffer medium. The sub-resonant point of the field source device is controlled by silicon-based lightweight scheduling to avoid high-frequency oscillation loss.

Benefits of technology

This technology reduces high-frequency oscillation fatigue and material aging, extends equipment lifespan, and improves overall durability and operational stability without affecting field wave output performance.

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Abstract

The application discloses a high-durability anti-aging structure of a high-frequency oscillation field source device, which is characterized by field source damping buffering, cavity low-stress coating and dynamic field state stable amplitude triple design, disperses high-frequency oscillation stress, softens field wave reflection impact, avoids peak high-intensity oscillation, comprehensively reduces piezoelectric material fatigue and cavity aging, and prolongs the service life of the whole machine. The structure does not affect the field operation performance, is simple to install, has low mass production cost, solves the problems of poor durability and easy aging of the high-frequency field source device, and is suitable for long-term continuous stable work of equipment.
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Description

Technical Field

[0001] This invention relates to the field of durable design technology for piezoelectric high-frequency oscillating devices, and specifically to a high-durability, anti-aging structure for a high-frequency oscillation field source device for a field computing computer. Background Technology

[0002] Field source devices in field computing computers use piezoelectric ceramics to operate at high frequency. Long-term high-frequency mechanical vibration can easily cause lattice fatigue, resonant point shift, and sensitivity decay, affecting the lifespan of the equipment. High-frequency field reflection within the cavity can easily cause local stress concentration, material aging, and coating loss. Existing anti-aging structures are complex and cannot be adapted to the operating characteristics of field source devices, making it difficult to improve durability without affecting the field wave output. Summary of the Invention

[0003] Purpose of the invention This invention provides a high-durability and anti-aging structure for a high-frequency oscillation field source device, which reduces high-frequency oscillation fatigue, decreases cavity material aging, and extends the overall service life of the device without affecting the field wave output performance. Technical solution A high-durability and anti-aging structure for a high-frequency oscillation field source device includes a vibration-resistant structure for the field source device, a buffer structure on the inner wall of the cavity, and a dynamic field-state amplitude stabilization module. Anti-vibration structure of field source device: A flexible damping buffer layer is added to the bottom of the piezoelectric ceramic oscillator, and an elastic encapsulation structure is adopted on the outside to disperse the high-frequency mechanical oscillation stress, avoid local stress concentration, reduce piezoelectric material lattice fatigue, and prevent resonance point shift and sensitivity attenuation. Cavity inner wall buffer structure: The inner wall of the cavity is coated with a low-stress flexible transition coating and filled with a low-pressure inert buffer medium to soften the impact of field wave reflection, reduce the scouring loss of the cavity material by the high-frequency field, and delay the aging and peeling of the inner wall coating. Dynamic field-state amplitude stabilization module: Through silicon-based lightweight scheduling, it controls the sub-resonant point operation of the field source device to avoid full-power peak oscillation. After startup, it automatically stabilizes the amplitude to the standard operating field strength, reducing long-term high-intensity high-frequency oscillation losses. This structure does not affect the purity of the field wave output or the computing performance. It achieves comprehensive anti-aging from three aspects: materials, structure, and control, and greatly improves the overall durability and lifespan of the machine. Beneficial effects Comprehensively reduce high-frequency oscillation mechanical fatigue and material aging, and extend the service life of devices; It does not affect the field wave output performance and calculation accuracy, ensuring the stability of equipment operation; Simple structure, no need to modify the core architecture, easy to install, and low mass production cost; Dynamic amplitude stabilization control balances computational performance and durability, making it suitable for long-term continuous operation; The cavity buffer design reduces field wave reflection loss and improves field stability.

Claims

1. A high-durability, anti-aging structure for a high-frequency oscillation field source device, characterized in that, It includes the vibration-resistant structure of the field source device, the buffer structure of the inner wall of the cavity, and the dynamic field state amplitude stabilization module.

2. The structure according to claim 1, characterized in that, The field source device is equipped with a flexible damping buffer layer and elastic packaging to disperse the mechanical stress of high-frequency oscillation.

3. The structure according to claim 1, characterized in that, The inner wall of the cavity is coated with a low-stress transition film, and the cavity is filled with a low-pressure inert buffer medium.

4. The structure according to claim 1, characterized in that, By controlling the sub-resonant point of the piezoelectric ceramic, dynamic field amplitude stabilization can be achieved, reducing peak oscillation loss.

5. The structure according to claim 1, characterized in that, The anti-aging structure does not affect the field wave output and computing performance.