Light emitting diode and method for manufacturing light emitting diode
By employing a ring-shaped first electrode and concentrically arranged circular second electrodes in a light-emitting diode, combined with a current blocking layer and a current spreading layer, the problems of low light extraction efficiency and easy aging caused by current concentration are solved, achieving higher luminous efficiency and longer service life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-22
- Publication Date
- 2026-08-04
AI Technical Summary
In existing light-emitting diodes, the current is concentrated in the area between the first electrode and the second electrode, making this area the main light-emitting area, occupying 80% of the area of the top surface of the step, while the other 20% of the area has low light emission efficiency and is prone to aging, affecting its service life.
The first electrode, which adopts a ring-shaped design, and the second electrode, which is concentrically arranged in a circular shape, combined with a current blocking layer and a current spreading layer, ensures uniform current distribution and avoids current concentration.
It improves the luminous efficiency and lifespan of LEDs, increases the light output efficiency of the top surface area of the step, avoids aging problems caused by current concentration, and extends the service life.
Smart Images
Figure CN122514101A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode and a method for manufacturing a light-emitting diode. Background Technology
[0002] Light-emitting diodes (LEDs) are small semiconductor devices that emit light and are widely used in displays, lighting, and other fields.
[0003] The related technology provides a light-emitting diode, including: an epitaxial structure, a first electrode and a second electrode, wherein the epitaxial structure has a step on one side, and the first electrode and the second electrode are respectively disposed on the bottom surface and the top surface of the step.
[0004] However, in the LED with the above structure, the current is mostly concentrated in the area between the first electrode and the second electrode. This area is also the main light-emitting area of the LED, accounting for 80% of the total area of the top surface of the step. The other 20% area has low light emission efficiency, and this main light-emitting area is prone to aging, affecting its service life. Summary of the Invention
[0005] This disclosure provides a light-emitting diode (LED) and a method for manufacturing an LED, which can increase the luminous efficiency and lifespan of the LED. The technical solution is as follows: On one hand, a light-emitting diode is provided, the light-emitting diode comprising: an epitaxial structure, a first electrode, and a second electrode; The extension structure includes a stepped structure, which includes a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface; The first electrode is electrically connected to the bottom surface of the step, and the second electrode is electrically connected to the top surface of the step; The bottom surface of the step is an annular region arranged along the edge of the extension structure, and the first electrode is an annular electrode located on the bottom surface of the step.
[0006] Optionally, the annular region is a circular region, and the first electrode is a circular electrode.
[0007] Optionally, the annular region and the annular electrode are arranged concentrically.
[0008] Optionally, the second electrode is a circular electrode, and the first electrode and the second electrode are arranged concentrically.
[0009] Optionally, the light-emitting diode further includes: a current blocking layer and a current spreading layer; The current blocking layer and the current spreading layer are located on the top surface of the step, and the current spreading layer covers the current blocking layer; The second electrode passes through the first through-hole of the current spreading layer and is electrically connected to the top surface of the step.
[0010] Optionally, the current blocking layer is a ring structure that surrounds the first through hole.
[0011] On the other hand, a light-emitting diode (LED) and a method for manufacturing an LED are provided, the method comprising: An extensional structure is fabricated, the extensional structure including a stepped structure, the stepped structure including a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface, the step bottom surface being an annular region arranged along the edge of the extensional structure; A first electrode and a second electrode are fabricated. The first electrode is electrically connected to the bottom surface of the step, and the second electrode is electrically connected to the top surface of the step. The first electrode is a ring-shaped electrode located on the bottom surface of the step.
[0012] Optionally, the annular region is a circular region, and the first electrode is a circular electrode.
[0013] Optionally, the annular region and the annular electrode are arranged concentrically.
[0014] Optionally, the second electrode is a circular electrode, and the first electrode and the second electrode are arranged concentrically.
[0015] Optionally, the method further includes: Before fabricating the first electrode and the second electrode, a current blocking layer and a current spreading layer are fabricated, the current blocking layer and the current spreading layer are located on the top surface of the step, and the current spreading layer covers the current blocking layer; The second electrode passes through the first through-hole of the current spreading layer and is electrically connected to the top surface of the step.
[0016] Optionally, the current blocking layer is a ring structure that surrounds the first through hole.
[0017] The beneficial effects of the technical solutions provided in this disclosure are: In this embodiment, the epitaxial structure has a stepped bottom surface with an annular region, and then an annular first electrode is disposed in the annular region. Since the current in a light-emitting diode (LED) is mostly concentrated in the top surface region of the step between the first and second electrodes, and the first electrode adopts an annular design, this region can fill the entire top surface of the step, thereby improving the light extraction efficiency of the entire top surface region. Furthermore, this design avoids the problem of easy aging of the light-emitting area caused by current concentration. Therefore, this solution can increase the luminous efficiency and lifespan of the LED. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a cross-sectional view of a light-emitting diode provided in an embodiment of this disclosure; Figure 2 This is a top view of a light-emitting diode provided in an embodiment of this disclosure; Figure 3 This is a flowchart illustrating a method for manufacturing a light-emitting diode according to an embodiment of the present disclosure; Figure 4 This is a flowchart of another method for manufacturing a light-emitting diode provided in this embodiment of the present disclosure; Figure 5 This is a schematic diagram of the current distribution of a light-emitting diode structure provided by related technologies; Figure 6 This is a schematic diagram of the current distribution of the light-emitting diode structure provided in the embodiments of this disclosure; Figure 7 This is a schematic diagram comparing the luminous efficacy of light-emitting diodes provided by related technologies and the light-emitting diode structures provided in the embodiments of this disclosure; Figure 8 This is a schematic diagram comparing the aging of light-emitting diodes provided by related technologies and the light-emitting diode structures provided in the embodiments of this disclosure.
[0020] The attached figures are labeled as follows: 100: Substrate; 101: First semiconductor layer; 102: Active layer; 103: Second semiconductor layer; 10: Epitaxial structure; 20: Current blocking layer; 30: Current spreading layer; 40: First electrode; 50: Second electrode; 60: Passivation layer; 301: First via; 120: Step structure; 121: Step bottom surface; 122: Step top surface; 123: Step sidewall. Detailed Implementation
[0021] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0022] Figure 1 A cross-sectional view of a light-emitting diode provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting diode includes: an epitaxial structure 10, a first electrode 40, and a second electrode 50.
[0023] The extension structure 10 includes a step structure 120, which includes a step bottom surface 121, a step top surface 122, and a step sidewall 123 connecting the step bottom surface 121 and the step top surface 122.
[0024] The first electrode 40 is electrically connected to the bottom surface 121 of the step, and the second electrode 50 is electrically connected to the top surface 122 of the step.
[0025] Figure 2 This is a top view of a light-emitting diode provided in an embodiment of the present disclosure. Figure 1 for Figure 2 Cross-sectional view at the dashed line A-A'.
[0026] See Figure 1 and Figure 2 The bottom surface 121 of the step is an annular region arranged along the edge of the extension structure 10, and the first electrode 40 is an annular electrode located on the bottom surface 121 of the step.
[0027] In this embodiment, the epitaxial structure has a stepped bottom surface with an annular region, and then an annular first electrode is disposed in the annular region. Since the current in a light-emitting diode (LED) is mostly concentrated in the top surface region of the step between the first and second electrodes, and the first electrode adopts an annular design, this region can fill the entire top surface of the step, thereby improving the light extraction efficiency of the entire top surface region. Furthermore, this design avoids the problem of easy aging of the light-emitting area caused by current concentration. Therefore, this solution can increase the luminous efficiency and lifespan of the LED.
[0028] In one implementation of this disclosure, the bottom surface 121 of the step is an annular region, and the first electrode 40 is an annular electrode.
[0029] In this implementation, the circular design not only fits the circular LED chip, but is also simple to manufacture; moreover, the circular shape facilitates current diffusion and avoids current concentration.
[0030] In one example, the annular region and the annular electrode are arranged concentrically.
[0031] Accordingly, the second electrode can be arranged at the center of the concentric ring.
[0032] For example, the second electrode 50 is a circular electrode, and the first electrode 40 and the second electrode 50 are arranged concentrically.
[0033] In this implementation, the concentric arrangement described above can maximize the uniformity of current diffusion, thereby ensuring uniform light emission and avoiding the problem of current concentration.
[0034] In this implementation, the concentric arrangement ensures that the current path from the second electrode to the first electrode is the same at all positions, thus ensuring uniform current distribution and promoting uniform brightness.
[0035] In other examples, the annular region and the annular electrode are arranged eccentrically.
[0036] In other implementations of the embodiments of this disclosure, the bottom surface 121 of the step and the first electrode 40 can be other annular shapes, such as rectangular rings, elliptical rings, etc.
[0037] See you again Figure 1 The light-emitting diode further includes: a current blocking layer 20 and a current spreading layer 30; The current blocking layer 20 and the current spreading layer 30 are located on the top surface 122 of the step, and the current spreading layer 30 covers the current blocking layer 20. The second electrode 50 passes through the first through hole 301 of the current spreading layer 30 and is electrically connected to the top surface 122 of the step.
[0038] In this implementation, a portion of the second electrode contacts the surface of the current spreading layer to facilitate current spreading. The light-emitting diode provided in this embodiment is a front-mounted product, and the second electrode is small in size, resulting in insufficient adhesion to the current spreading layer. If the entire second electrode contacts the surface of the current spreading layer, there is a risk of electrode detachment. Therefore, the second electrode passes through the first through-hole and connects to the top surface of the step of the epitaxial structure. The surface adhesion of the epitaxial structure is large, and this design can prevent electrode detachment.
[0039] like Figure 1 As shown, the current blocking layer 20 has a ring structure, which surrounds the first through hole 301.
[0040] In some examples, both the current blocking layer 20 and the current spreading layer 30 are annular structures, which are also arranged concentrically with the annular first electrode.
[0041] In other examples, the current blocking layer 20 and the current spreading layer 30 can be other ring shapes, such as rectangular rings, elliptical rings, etc.
[0042] like Figure 1 As shown, the cross-section of the second electrode 50 in the direction perpendicular to the top surface of the step is T-shaped.
[0043] like Figure 1 As shown, the epitaxial structure 10 includes a first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103. The first semiconductor layer 101, the active layer 102, and the second semiconductor layer 103 are stacked sequentially, with the bottom surface of the step located on the first semiconductor layer 101 and the top surface of the step located on the second semiconductor layer 103.
[0044] like Figure 1 As shown, the light-emitting diode also includes a substrate 100, and the first semiconductor layer 101, the active layer 102 and the second semiconductor layer 103 are sequentially stacked on the surface of the substrate 100.
[0045] like Figure 1 As shown, the light-emitting diode also includes a passivation layer 60, which covers the current spreading layer, the first electrode, and the second electrode, and exposes the first electrode and the second electrode.
[0046] In this embodiment of the disclosure, the substrate 100 can be any one of a sapphire substrate, a Si substrate, a SiC substrate, etc., and this embodiment of the disclosure does not limit it.
[0047] For example, substrate 100 is a sapphire substrate.
[0048] The thickness of the substrate 100 can be 3~200μm, for example, 200μm.
[0049] In this embodiment of the disclosure, the first semiconductor layer 101 can be an N-type semiconductor layer, the active layer 102 is a multi-quantum well layer, and the second semiconductor layer 103 can be a P-type semiconductor layer.
[0050] For example, the first semiconductor layer 101 is an N-type GaN layer, the active layer is an InGaN / GaN layer, and the second semiconductor layer 103 is a P-type GaN layer.
[0051] In other examples, the first semiconductor layer 101 is a P-type semiconductor layer, the active layer 102 is a multi-quantum-well layer, and the second semiconductor layer 103 is an N-type semiconductor layer.
[0052] In this embodiment, the current blocking layer 20 can be SiO2. x Layers where x is greater than 0, for example, current blocking layer 20 is a SiO2 layer.
[0053] The thickness of the current blocking layer 20 can be 0.01~6μm, for example, 2μm.
[0054] In this embodiment of the disclosure, the current spreading layer 30 may be an indium tin oxide (ITO) layer.
[0055] The thickness of the current spreading layer 30 can be 0.01~100μm, for example, 10μm.
[0056] In this embodiment of the disclosure, the passivation layer 60 can be one or a combination of two of SiO2 and Si3N4.
[0057] The thickness of the passivation layer 60 can be 0.01~1000μm, for example, 100μm.
[0058] In this embodiment of the disclosure, the first electrode 40 and the second electrode 50 can be one or more stacked materials selected from Cr, Al, Ti, Ni, Pt, and Au.
[0059] For example, the first electrode 40 and the second electrode 50 are Cr / Al / Ti / Ni / Pt / Au stacked electrodes.
[0060] The thicknesses of each sublayer in Cr / Al / Ti / Ni / Pt / Au can be, in order: 30nm / 1000nm / 40nm / 1000nm / 1000nm / 10000nm.
[0061] See Figure 2 The structure provided in this embodiment can be composed of multiple annular rings. For example, the first electrode 40, the step bottom surface 121, the current blocking layer 20, the current spreading layer 30, and the passivation layer 60 are all annular rings, and these annular rings are all concentrically arranged.
[0062] The passivation layer 60 includes two annular portions, with an annular through hole between the two annular portions, and the annular through hole is opened on the surface of the first electrode.
[0063] Of course, the above film structure is only an example, and in other embodiments, the light-emitting diode may include more or fewer film layers. Furthermore, the above film material is only an example; the materials of each film layer can be selectively set, and this disclosure does not limit this.
[0064] Figure 3 This is a flowchart illustrating a method for manufacturing a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 3 The method includes the following steps: S21. Fabricate an extension structure, the extension structure including a step structure, the step structure including a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface, the step bottom surface being an annular area arranged along the edge of the extension structure.
[0065] S22. Fabricate a first electrode and a second electrode, wherein the first electrode is electrically connected to the bottom surface of the step and the second electrode is electrically connected to the top surface of the step, and the first electrode is an annular electrode located on the bottom surface of the step.
[0066] In this embodiment, the epitaxial structure has a stepped bottom surface with an annular region, and then an annular first electrode is disposed in the annular region. Since the current in a light-emitting diode (LED) is mostly concentrated in the top surface region of the step between the first and second electrodes, and the first electrode adopts an annular design, this region can fill the entire top surface of the step, thereby improving the light extraction efficiency of the entire top surface region. Furthermore, this design avoids the problem of easy aging of the light-emitting area caused by current concentration. Therefore, this solution can increase the luminous efficiency and lifespan of the LED.
[0067] Figure 4 A flowchart illustrating another method for fabricating a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 4 The method includes the following steps: S31. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on a substrate.
[0068] In this embodiment of the disclosure, the substrate can be any one of sapphire substrate, Si substrate, SiC substrate, etc., and this embodiment of the disclosure does not limit it.
[0069] For example, the substrate is a sapphire substrate.
[0070] The thickness of the substrate can be 3~200μm, for example, 200μm.
[0071] In one example, step S31 includes: The first step is to grow the first semiconductor layer.
[0072] The first semiconductor layer is an N-type GaN layer.
[0073] An N-type GaN layer was grown on the substrate surface using a metal-organic chemical vapor deposition (MOCVD) system.
[0074] In the embodiments disclosed herein, the above-mentioned semiconductor layer can be grown using a Veeco K465i or C4 or RB MOCVD equipment or an AIXTRON metal-organic chemical vapor deposition equipment. High-purity H2 (hydrogen), high-purity N2 (nitrogen), or a mixture of high-purity H2 and high-purity N2 is used as the carrier gas; high-purity NH3 is used as the N source; trimethylgallium (TMGa) and triethylgallium (TEGa) are used as gallium sources; trimethylindium (TMIn) is used as the indium source; silane (SiH4) is used as the N-type dopant; trimethylaluminum (TMAl) is used as the aluminum source; and magnesium pyrocene (CP2Mg) is used as the P-type dopant.
[0075] The second step is to grow the active layer.
[0076] For example, an InGaN / GaN layer is grown on the surface of an N-type GaN layer using an MOCVD device.
[0077] The third step is to grow a second semiconductor layer.
[0078] For example, an MOCVD device is used to grow a P-type GaN layer on the surface of an InGaN / GaN layer.
[0079] S32. The first semiconductor layer, the active layer and the second semiconductor layer stacked in sequence are patterned to form a stepped structure.
[0080] In one example, step S32 includes: An etching technique is used to pattern the first semiconductor layer and the active layer to form a stepped structure. The stepped structure includes a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface.
[0081] In this structure, the bottom surface of the step is located in the first semiconductor layer, and the top surface of the step is located in the second semiconductor layer.
[0082] The bottom surface of the step is an annular region arranged along the edge of the extended structure.
[0083] Among them, the etching technology can be inductively coupled plasma (ICP) etching technology.
[0084] In one implementation of this disclosure, the bottom surface of the step is an annular region.
[0085] In other implementations of this disclosure, the bottom surface of the step can be other annular shapes, such as rectangular rings, elliptical rings, etc.
[0086] S33. A current blocking layer is formed on the surface of the second semiconductor layer.
[0087] The current blocking layer is located on the top surface of the step and has a ring structure.
[0088] In one example, step S33 includes: SiO2 was deposited using an electron beam evaporation device. x Thin film, x > 0; for SiO x The thin film is patterned to obtain the current blocking layer.
[0089] The growth temperature during vapor deposition is 100℃~500℃.
[0090] For example, the current blocking layer is a SiO2 layer.
[0091] Through the above-described patterning process, the current blocking layer forms a ring structure.
[0092] In some examples, the current blocking layer is a ring structure, which is also arranged concentrically with the ring of the first electrode.
[0093] In other examples, the current blocking layer can be other ring shapes, such as rectangular rings, elliptical rings, etc.
[0094] S34. A current spreading layer is formed on the surface of the current blocking layer and the second semiconductor layer.
[0095] The current spreading layer is located on the top surface of the step, the current spreading layer covers the current blocking layer, the current spreading layer has a first through hole, and the annular current blocking layer surrounds the first through hole.
[0096] In one example, step S34 includes: A current-spreading thin film is deposited using an electron beam evaporation apparatus; the current-spreading thin film is then patterned to obtain the current-spreading layer.
[0097] In this embodiment of the disclosure, the current spreading layer is an indium tin oxide (ITO) layer.
[0098] The thickness of the current spreading layer can be 0.01~100μm, for example, 10μm.
[0099] Through the above-described patterning process, the current spreading layer forms a ring structure.
[0100] In some examples, the current spreading layer is a ring structure, which is also arranged concentrically with the ring of the first electrode.
[0101] In other examples, the current spreading layer can be other ring shapes, such as rectangular rings, elliptical rings, etc.
[0102] S35, Fabricate the first and second electrodes.
[0103] The first electrode is connected to the first semiconductor layer, and the second electrode is connected to the current spreading layer and the second semiconductor layer.
[0104] The second electrode passes through a first via in the current spreading layer and is electrically connected to the second semiconductor layer. The first electrode is an annular electrode located at the bottom of the step.
[0105] In one example, step S35 includes: The first electrode is fabricated on the stepped surface of the stepped structure using magnetron sputtering or electron beam evaporation, and the second electrode is fabricated on the surface of the current spreading layer.
[0106] The temperature for manufacturing the electrodes can be from 100℃ to 400℃, and annealing is performed after the electrodes are manufactured.
[0107] In this embodiment of the disclosure, the first electrode and the second electrode can be one or more stacks of Cr, Al, Ti, Ni, Pt, and Au.
[0108] For example, the first electrode and the second electrode are Cr / Al / Ti / Ni / Pt / Au stacked electrodes.
[0109] The thicknesses of each sublayer in Cr / Al / Ti / Ni / Pt / Au can be, in order: 30nm / 1000nm / 40nm / 1000nm / 1000nm / 10000nm.
[0110] In one implementation of this disclosure, the first electrode is a ring electrode.
[0111] In one example, the annular region and the annular electrode are arranged concentrically.
[0112] Accordingly, the second electrode can be arranged at the center of the concentric ring.
[0113] For example, the second electrode 50 is a circular electrode, and the first electrode 40 and the second electrode 50 are arranged concentrically.
[0114] In this implementation, the concentric arrangement described above can maximize the uniformity of current diffusion, thereby ensuring uniform light emission and avoiding the problem of current concentration.
[0115] In other examples, the annular region and the annular electrode are arranged eccentrically.
[0116] In other implementations of the embodiments of this disclosure, the first electrode may be other annular shapes, such as rectangular rings, elliptical rings, etc.
[0117] For example, the cross-section of the second electrode in the direction perpendicular to the top surface of the step is T-shaped.
[0118] S36. Create a passivation layer.
[0119] The passivation layer covers the current spreading layer, the first electrode, and the second electrode.
[0120] In one example, step S36 includes: A passivation layer film is fabricated using plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) techniques; the passivation layer film is patterned to form vias corresponding to the first electrode and the second electrode, respectively.
[0121] For example, an etching technique is used to etch the passivation layer film to form vias corresponding to the first electrode and the second electrode, respectively.
[0122] In this embodiment of the disclosure, the passivation layer may be one or a combination of two of SiO2 and Si3N4.
[0123] The thickness of the passivation layer can be 0.01~1000μm, for example, 100μm.
[0124] Optionally, the method may further include grinding, polishing, and dicing the light-emitting diode wafer to obtain a light-emitting diode chip.
[0125] Figure 5 This is a schematic diagram of the current distribution of a light-emitting diode structure provided by related technologies. Figure 6 This is a schematic diagram of the current distribution of the light-emitting diode structure provided in the embodiments of this disclosure. For example... Figure 5 and 6 As shown, in related light-emitting diodes, the current is mostly concentrated in the area between the first electrode 40 and the second electrode 50, accounting for 80% of the total area of the top surface of the step. In the light-emitting diode structure of this embodiment, the first electrode 40 is annular, which distributes the current across the entire top surface of the step, thereby increasing the luminous efficiency and lifespan of the light-emitting diode. It should be noted that the small circles shown in the figure represent electrons, and the electron distribution indicates the degree of current concentration.
[0126] Figure 7 This is a schematic diagram comparing the luminous efficacy of light-emitting diodes (LEDs) provided by related technologies and those provided in the embodiments of this disclosure. Figure 7 The dashed lines represent embodiments of this disclosure, and the solid lines represent related technologies.
[0127] based on Figure 7 It can be seen that the luminous efficacy of the light-emitting diode structure provided in this embodiment is significantly higher than that of the light-emitting diodes provided in related technologies.
[0128] Wherein, luminous efficacy = brightness / (voltage) (Current), in percentage. The luminous efficacy of the light-emitting diode structure provided in this disclosure is 30% higher than that of light-emitting diodes provided in related technologies.
[0129] Figure 8 This is a schematic diagram comparing the aging of light-emitting diodes provided by related technologies and the light-emitting diode structures provided in the embodiments of this disclosure. Figure 8 The dashed lines represent embodiments of this disclosure, and the solid lines represent related technologies.
[0130] based on Figure 8 It can be seen that the anti-aging performance of the light-emitting diode structure provided in this embodiment is significantly better than that of the light-emitting diodes provided in related technologies.
[0131] The LEDs were aged in the laboratory for 3000 hours under normal temperature and load conditions for comparison. The LEDs provided in this embodiment exhibit an average light decay of 7.5%, while LEDs provided in related technologies exhibit an average light decay of 20%. The anti-aging performance of the LEDs provided in this embodiment is far superior to that of LEDs provided in related technologies.
[0132] If the LED is scrapped due to 8% light decay, and the usage time under test conditions is converted to normal conditions at a ratio of 1:10, then the lifespan of the LED provided in this embodiment is extended by 15,000 hours, greatly improving the LED's service life.
[0133] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. A light emitting diode, characterized by, The light-emitting diode includes: an epitaxial structure (10), a first electrode (40), and a second electrode (50); The extension structure (10) includes a step structure (120), which includes a step bottom surface (121), a step top surface (122), and a step sidewall (123) connecting the step bottom surface (121) and the step top surface (122). The first electrode (40) is electrically connected to the bottom surface (121) of the step, and the second electrode (50) is electrically connected to the top surface (122) of the step; The bottom surface (121) of the step is an annular region arranged along the edge of the extension structure (10), and the first electrode (40) is an annular electrode located on the bottom surface (121) of the step.
2. The light emitting diode of claim 1, wherein, The annular region is a circular region, and the first electrode (40) is a circular electrode.
3. The light emitting diode of claim 2, wherein, The annular region and the annular electrode are arranged concentrically.
4. The light-emitting diode according to claim 2, characterized in that, The second electrode (50) is a circular electrode, and the first electrode (40) and the second electrode (50) are arranged concentrically.
5. The light-emitting diode according to any one of claims 1 to 4, characterized in that, The light-emitting diode further includes: a current blocking layer (20) and a current spreading layer (30); The current blocking layer (20) and the current spreading layer (30) are located on the top surface (122) of the step, and the current spreading layer (30) covers the current blocking layer (20). The second electrode (50) is electrically connected to the top surface (122) of the step through the first through hole (301) of the current spreading layer (30); The current blocking layer (20) is a ring structure, which surrounds the first through hole (301).
6. A method for manufacturing a light-emitting diode, characterized in that, The method includes An extensional structure is fabricated, the extensional structure including a stepped structure, the stepped structure including a step bottom surface, a step top surface, and a step sidewall connecting the step bottom surface and the step top surface, the step bottom surface being an annular region arranged along the edge of the extensional structure; A first electrode and a second electrode are fabricated. The first electrode is electrically connected to the bottom surface of the step, and the second electrode is electrically connected to the top surface of the step. The first electrode is a ring-shaped electrode located on the bottom surface of the step.
7. The method according to claim 6, characterized in that, The annular region is a circular region, and the first electrode is a circular electrode.
8. The method according to claim 7, characterized in that, The annular region and the annular electrode are arranged concentrically.
9. The method according to claim 8, characterized in that, The second electrode is a circular electrode, and the first electrode and the second electrode are arranged concentrically.
10. The method according to any one of claims 6 to 9, characterized in that, The method further includes: Before fabricating the first electrode and the second electrode, a current blocking layer and a current spreading layer are fabricated, the current blocking layer and the current spreading layer are located on the top surface of the step, and the current spreading layer covers the current blocking layer; The second electrode passes through the first through-hole of the current spreading layer and is electrically connected to the top surface of the step; The current blocking layer has a ring structure, which surrounds the first through hole.