Oxide thin film transistor, method of manufacturing, and hydrogen and oxygen control method

Abstract

The application provides an oxide thin film transistor, a preparation method and a hydrogen-oxygen regulation method, and belongs to the technical field of semiconductor devices. The light response composite reversible layer can store hydrogen ions and oxygen ions, release hydrogen ions under the action of visible light, and release oxygen ions under the action of ultraviolet light. The photocatalytic transition layer is arranged between the light response composite reversible layer and the oxide channel layer, directionally transports the hydrogen ions released by the light response composite reversible layer to the oxide channel layer under the action of visible light, and directionally transports the oxygen ions released by the light response composite reversible layer to the oxide channel layer under the action of ultraviolet light. The light emission array layer is arranged on the other side of the oxide channel layer, emits visible light to the photocatalytic transition layer and the light response composite reversible layer, and also emits ultraviolet light to the photocatalytic transition layer and the light response composite reversible layer. Through the application, the selective release, directional transportation and storage of hydrogen ions and oxygen ions are realized, and the problem that the traditional structure cannot realize hydrogen-oxygen bidirectional regulation is solved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor device technology, and particularly relates to an oxide thin film transistor, its fabrication method, and a hydrogen-oxygen regulation method. Background Technology

[0002] Indium gallium zinc oxide (In-Ga-Zn-O, IGZO) thin-film transistors (TFTs) are widely used in flexible displays and wearable electronics due to their advantages such as high mobility, low power consumption, and good uniformity. Hydrogen ions (H+) in IGZO TFTs... + ) and oxygen ions (O²) - The concentration and distribution of TFTs directly determine the core electrical properties of TFTs, such as threshold voltage, mobility, and on / off ratio. This is the core technical path for regulating the operating state of devices and improving service stability.

[0003] However, in the traditional structure of IGZO TFT, the regulation of hydrogen and oxygen can only achieve unidirectional regulation of a single hydrogen ion or a single oxygen ion, and cannot achieve bidirectional regulation of hydrogen and oxygen. Summary of the Invention

[0004] The purpose of this application is to provide an oxide thin-film transistor, its fabrication method, and a hydrogen-oxygen control method, aiming to solve the problem that the traditional structure of IGZO TFT cannot achieve bidirectional hydrogen-oxygen control.

[0005] This application provides an oxide thin-film transistor, comprising: Oxide channel layer; A photoresponsive composite reversible layer is disposed on one side of the oxide channel layer to store hydrogen ions and oxygen ions, and to release hydrogen ions under visible light and oxygen ions under ultraviolet light; the photoresponsive composite reversible layer is a composite film layer with oxygen storage function and hydrogen storage function. A photocatalytic transition layer is disposed between the photoresponsive composite reversible layer and the oxide channel layer, for directionally transporting hydrogen ions released by the photoresponsive composite reversible layer to the oxide channel layer under visible light, and directionally transporting oxygen ions released by the photoresponsive composite reversible layer to the oxide channel layer under ultraviolet light. A light-emitting array layer is disposed on the other side of the oxide channel layer and is used to emit visible light to the photocatalytic transition layer and the photoresponsive composite reversible layer. The light-emitting array layer is also used to emit ultraviolet light to the photocatalytic transition layer and the photoresponsive composite reversible layer.

[0006] In some embodiments, the oxide thin-film transistor further includes: An electrical detection film layer is disposed between the oxide channel layer and the photocatalytic transition layer, and is used as a sensing electrode to pick up changes in electrical signals at the interface of the oxide channel layer and output an induced current.

[0007] In some embodiments, the oxide thin-film transistor further includes: A light-transparent flexible substrate, wherein the light-emitting array layer is disposed on the surface of the thin film stack region of the light-transparent flexible substrate; The core control module is located on the surface of the non-thin film stacked region of the light-transmitting flexible substrate; The core control module is electrically connected to the electrical detection film and is used to determine the threshold voltage based on the induced current.

[0008] In some embodiments, the core control module is also electrically connected to the optical emitting array layer and is used to control the optical emitting array layer to emit visible light to the photoresponse composite reversible layer when the threshold voltage is less than a first preset voltage.

[0009] In some embodiments, the core control module is also electrically connected to the light emitting array layer and is used to control the light emitting array layer to emit ultraviolet light to the photoresponsive composite reversible layer when the threshold voltage is greater than the second preset voltage.

[0010] In some embodiments, the light emitting array layer includes: A light-emitting diode array is disposed on the surface of the thin film stacked region of the light-transmitting flexible substrate. The core control module is connected to the light-emitting diode array and is used to control the light-emitting diode array to emit visible light and ultraviolet light. An array insulating layer is disposed on the surface of the thin film stack region of the light-transmitting flexible substrate, and the array insulating layer covers the light-emitting diode array.

[0011] In some embodiments, the oxide thin-film transistor further includes: A light-transmitting gate layer is disposed on the surface of the array insulating layer away from the light-transmitting flexible substrate; A gate insulating layer is disposed on the surface of the array insulating layer away from the light-transmitting flexible substrate, and the gate insulating layer covers the light-transmitting gate layer; The oxide channel layer is disposed on the surface of the gate insulating layer away from the light-transmitting gate layer.

[0012] In some embodiments, the oxide thin-film transistor further includes: A light-transmitting electrode layer is disposed on the surface of the photoresponsive composite reversible layer away from the photocatalytic transition layer, and the light-transmitting electrode layer is in ohmic contact with the oxide channel layer; A light-transmitting drain layer is disposed at a distance from the light-transmitting light-transmitting drain layer on the surface of the photoresponsive composite reversible layer away from the photocatalytic transition layer, and the light-transmitting drain layer is in ohmic contact with the oxide channel layer.

[0013] This application provides a method for fabricating an oxide thin-film transistor, comprising: Provides a light-emitting array layer; An oxide channel layer is fabricated on one side of the light-emitting array layer; A transparent metal oxide film with photocatalytic activity is deposited on the side of the oxide channel layer away from the light-emitting array layer to obtain a photocatalytic transition layer; A composite film layer with oxygen storage and hydrogen storage functions is spin-coated on the side of the photocatalytic transition layer away from the oxide channel layer to obtain a photoresponsive composite reversible layer.

[0014] The photoresponsive composite reversible layer is used to store hydrogen ions and oxygen ions, and releases hydrogen ions under visible light and oxygen ions under ultraviolet light. The photocatalytic transition layer is used to directionally transport hydrogen ions released by the photoresponsive composite reversible layer to the oxide channel layer under visible light, and to directionally transport oxygen ions released by the photoresponsive composite reversible layer to the oxide channel layer under ultraviolet light. The light-emitting array layer is used to emit visible light to the photocatalytic transition layer and the photoresponsive composite reversible layer, and is also used to emit ultraviolet light to the photocatalytic transition layer and the photoresponsive composite reversible layer.

[0015] This application provides a hydrogen-oxygen regulation method, which performs hydrogen-oxygen regulation based on any one of the oxide thin-film transistors described in the above embodiments. The method includes: Send visible light trigger signals and / or ultraviolet light trigger signals to the light emitting array layer; The light-emitting array layer emits visible light and / or ultraviolet light to the photocatalytic transition layer and the photoresponsive composite reversible layer according to the visible light trigger signal and / or ultraviolet light trigger signal; The photoresponsive composite reversible layer responds to visible light and / or ultraviolet light, releasing hydrogen ions and / or oxygen ions; The photocatalytic transition layer responds to visible and / or ultraviolet light to directionally transport hydrogen and / or oxygen ions to the oxide channel layer.

[0016] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: The oxide channel layer serves as the switching and conduction carrier channel for the oxide thin-film transistor. A photoresponsive reversible layer is disposed on one side of the oxide channel layer, possessing both oxygen and hydrogen storage functions. It is photoexcited, releasing hydrogen ions under visible light and oxygen ions under ultraviolet light. Simultaneously, the photoresponsive reversible layer can automatically capture hydrogen and oxygen ions from the surrounding environment when not exposed to light, thus storing these ions.

[0017] The photocatalytic transition layer, exhibiting high photocatalytic activity, is positioned between the photoresponsive composite reversible layer and the oxide channel layer. It lowers the hydrogen ion transport barrier under visible light and the oxygen ion transport barrier under ultraviolet light, thus constructing a directional ion transport channel. Through the photocatalytic transition layer, hydrogen and oxygen ions released from the photoresponsive composite reversible layer can be directionally transported along the interface to the oxide channel layer, avoiding disordered diffusion losses of hydrogen and oxygen ions.

[0018] A light-emitting array layer is disposed on the other side of the oxide channel layer, emitting wavelengths covering the ultraviolet and visible light bands. Visible light emitted by the light-emitting array layer passes through the oxide channel layer and the photocatalytic transition layer, and is incident on the photoresponsive reversible layer, exciting it to release hydrogen ions. The hydrogen ions released by the photoresponsive reversible layer are then injected into the oxide channel layer through the photocatalytic transition layer. As donors, hydrogen ions increase the number of charge carriers, causing a negative shift in the threshold voltage Vth of the oxide thin-film transistor, thus lowering the threshold voltage of the oxide thin-film transistor.

[0019] Ultraviolet light emitted from the light-emitting array layer passes through the oxide channel layer and the photocatalytic transition layer, and is incident on the photoresponsive reversible layer, exciting it to release oxygen ions. These oxygen ions are then injected into the oxide channel layer via the photocatalytic transition layer. The oxygen ions repair lattice oxygen vacancies, acting as acceptor compensation, which reduces charge carriers and causes a positive shift in the threshold voltage Vth of the oxide thin-film transistor, thus increasing the threshold voltage of the oxide thin-film transistor.

[0020] Furthermore, the photoresponsive reversible layer in the oxide thin-film transistor provided in this application can store hydrogen and oxygen ions, thus achieving the storage of hydrogen and oxygen ions. Visible and ultraviolet light emitted from the light-emitting array layer in the oxide thin-film transistor provided in this application respectively excite the photoresponsive reversible layer to release hydrogen and oxygen ions, which are then directionally transported to the oxide channel layer via the photocatalytic transition layer, achieving the release of hydrogen and oxygen ions. Therefore, the oxide thin-film transistor provided in this application can be reversibly controlled in real time to achieve selective release, directional transport, and storage of hydrogen and oxygen ions, solving the problem that the traditional structure of IGZO TFTs cannot achieve bidirectional hydrogen and oxygen control.

[0021] Furthermore, the photoresponsive composite reversible layer in the oxide thin-film transistor provided in this application can store hydrogen and oxygen ions without requiring an external operating voltage or high-temperature triggering. Simultaneously, visible and ultraviolet light emitted from the light-emitting array layer in the oxide thin-film transistor provided in this application excites the photoresponsive composite reversible layer to release hydrogen and oxygen ions. These released hydrogen and oxygen ions are then directionally transported to the oxide channel layer via a photocatalytic transition layer, again without requiring an external operating voltage or high-temperature triggering. Therefore, the oxide thin-film transistor provided in this application requires no external operating voltage or high-temperature triggering throughout the entire process, significantly reducing device power consumption, optimizing the interface structure to reduce ion transport resistance, and improving photoresponse speed and cycle life. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or exemplary technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 Schematic cross-sectional view of oxide thin-film transistors in some embodiments provided in this application; Figure 2 Top view of oxide thin film transistor and schematic diagram of TFT equivalent circuit in some embodiments provided in this application; Figure 3 A schematic diagram illustrating the steps of the method for fabricating oxide thin-film transistors in some embodiments provided in this application; Figure 4 The following are schematic diagrams illustrating the steps of the hydrogen-oxygen regulation method in some embodiments provided in this application. Detailed Implementation

[0024] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0025] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0026] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0027] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. Additionally, in the embodiments of this application, the terms "first" and "second" are used to distinguish identical or similar items that have substantially the same function and effect. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or order of execution, and that "first" and "second" do not necessarily imply difference.

[0028] In the description of this application, unless otherwise stated, " / " indicates that the objects before and after it are in an "or" relationship. For example, A / B can mean A or B. "And / or" in this application is merely a description of the relationship between the related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone, where A and B can be singular or plural. Furthermore, in the description of this application, unless otherwise stated, "multiple" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0029] IGZO, as a core material of amorphous oxide semiconductors, relies on oxygen vacancy-dominated electron transport for conductivity, combined with the orbital overlap mechanism inherent in amorphous structures, to achieve high carrier mobility and stable conductivity. In the traditional structure of IGZO TFTs, hydrogen ions (H+)... + ) and oxygen ions (O²) - The regulation of hydrogen ions and oxygen ions mostly adopts a single storage layer structure, which can only realize the unidirectional storage and release of hydrogen ions or oxygen ions, and cannot achieve bidirectional regulation of hydrogen and oxygen.

[0030] Furthermore, in the traditional structure of IGZO TFTs, the hydrogen and oxygen ion regulation of the IGZO TFT is usually fixed during the film preparation process, making it impossible to perform targeted regulation later. This leaves no room for trial and error during the engineering fabrication process, resulting in significant waste and irreversibility. Moreover, after threshold voltage Vth drift occurs due to the fabrication process or aging, complex peripheral compensation circuits are required to correct the TFT characteristics.

[0031] For the above issues, please refer to Figure 1 This application provides an oxide thin-film transistor. The oxide thin-film transistor includes an oxide channel layer 10, a photoresponsive reversible layer 20, a photocatalytic transition layer 30, and a light-emitting array layer 40. The photoresponsive reversible layer 20 is disposed on one side of the oxide channel layer 10 and is used to store hydrogen ions and oxygen ions, releasing hydrogen ions under visible light and releasing oxygen ions under ultraviolet light. The photoresponsive reversible layer 20 is a composite film layer with both oxygen and hydrogen storage functions.

[0032] A photocatalytic transition layer 30 is disposed between the photoresponsive reversible composite layer 20 and the oxide channel layer 10. It is used for the directional transport of hydrogen ions released from the photoresponsive reversible composite layer 20 to the oxide channel layer 10 under visible light and for the directional transport of oxygen ions released from the photoresponsive reversible composite layer 20 to the oxide channel layer 10 under ultraviolet light. A light-emitting array layer 40 is disposed on the other side of the oxide channel layer 10 and is used to emit visible light to the photocatalytic transition layer 30 and the photoresponsive reversible composite layer 20. The light-emitting array layer 40 is also used to emit ultraviolet light to the photocatalytic transition layer 30 and the photoresponsive reversible composite layer 20.

[0033] In this embodiment, the oxide channel layer 10 serves as the switching and conducting carrier channel for the oxide thin-film transistor. A photoresponsive reversible layer 20 is disposed on one side of the oxide channel layer 10, possessing both oxygen and hydrogen storage functions. It is photoexcited, releasing hydrogen ions under visible light and oxygen ions under ultraviolet light. Simultaneously, the photoresponsive reversible layer 20 can automatically capture hydrogen and oxygen ions from the surrounding environment when not exposed to light, thus storing hydrogen and oxygen ions.

[0034] The photocatalytic transition layer 30, possessing high photocatalytic activity, is positioned between the photoresponsive composite reversible layer 20 and the oxide channel layer 10. It lowers the hydrogen ion transport barrier under visible light and the oxygen ion transport barrier under ultraviolet light, thus constructing a directional ion transport channel. Through the photocatalytic transition layer 30, hydrogen and oxygen ions released from the photoresponsive composite reversible layer 20 can be directionally transported along the interface to the oxide channel layer 10, avoiding disordered diffusion losses of hydrogen and oxygen ions.

[0035] A light-emitting array layer 40 is disposed on the other side of the oxide channel layer 10, emitting wavelengths covering the ultraviolet and visible light bands. Visible light emitted by the light-emitting array layer 40 passes through the oxide channel layer 10 and the photocatalytic transition layer 30, and is incident on the photoresponsive reversible layer 20, exciting it to release hydrogen ions. The hydrogen ions released by the photoresponsive reversible layer 20 are then injected into the oxide channel layer 10 through the photocatalytic transition layer 30. As donors, hydrogen ions increase the number of charge carriers, causing a negative shift in the threshold voltage Vth of the oxide thin-film transistor, thus reducing the threshold voltage of the oxide thin-film transistor.

[0036] Ultraviolet light emitted from the light-emitting array layer 40 passes through the oxide channel layer 10 and the photocatalytic transition layer 30, and is incident on the photoresponsive reversible layer 20, exciting the photoresponsive reversible layer 20 to release oxygen ions. The oxygen ions released by the photoresponsive reversible layer 20 are then injected into the oxide channel layer 10 through the photocatalytic transition layer 30. The oxygen ions can repair lattice oxygen vacancies, playing an acceptor compensation role, which can reduce the number of charge carriers, causing a positive shift in the threshold voltage Vth of the oxide thin-film transistor, thus increasing the threshold voltage of the oxide thin-film transistor.

[0037] Furthermore, the photoresponsive reversible layer 20 in the oxide thin-film transistor provided in this application can store hydrogen and oxygen ions, thus achieving the storage of hydrogen and oxygen ions. Visible light and ultraviolet light emitted by the light-emitting array layer 40 in the oxide thin-film transistor provided in this application respectively excite the photoresponsive reversible layer 20 to release hydrogen and oxygen ions, which are then directionally transported to the oxide channel layer 10 via the photocatalytic transition layer 30, achieving the release of hydrogen and oxygen ions. Therefore, the oxide thin-film transistor provided in this application can be reversibly controlled to achieve selective release, directional transport, and storage of hydrogen and oxygen ions, solving the problem that the traditional structure of IGZO TFTs cannot achieve bidirectional hydrogen and oxygen control.

[0038] Furthermore, the photoresponsive composite reversible layer 20 in the oxide thin-film transistor provided in this application can store hydrogen and oxygen ions without requiring an external operating voltage or high-temperature triggering. Simultaneously, visible and ultraviolet light emitted from the light-emitting array layer 40 in the oxide thin-film transistor provided in this application excites the photoresponsive composite reversible layer 20 to release hydrogen and oxygen ions. These released hydrogen and oxygen ions are then directionally transported to the oxide channel layer 10 via the photocatalytic transition layer 30, again without requiring an external operating voltage or high-temperature triggering. Therefore, the oxide thin-film transistor provided in this application requires no external operating voltage or high-temperature triggering throughout the entire process, significantly reducing device power consumption, optimizing the interface structure to reduce ion transport resistance, and improving photoresponse speed and cycle life.

[0039] In some embodiments, the oxide channel layer 10 is made of IGZO. The thickness of the oxide channel layer 10 is 25 nm to 40 nm. The general chemical formula of IGZO is (In₂O₃)x(Ga₂O₃)y(ZnO)₁ x IGZO, with a cation ratio of In:Ga:Zn = 1:1:1, is sensitive to both hydrogen and oxygen vacancies. The conductivity of IGZO stems from its unique atomic structure and electron orbital distribution. At room temperature, IGZO is amorphous (a-IGZO), lacking long-range atomic order but possessing localized short-range ordered regions, thus avoiding the carrier scattering problem caused by grain boundaries in crystalline semiconductors.

[0040] IGZO conductivity depends on the ns orbitals (n≥4) of the metal cations and the In³⁺. + 5s orbit, Ga³ + 4s orbital and Zn² + The 4s orbitals of IGZO have a large orbital radius and are spherical. Even in amorphous structures, the ns orbitals of adjacent metal ions can effectively overlap to form continuous conductive channels, which is the key reason why the mobility of IGZO is much higher than that of amorphous silicon (a-Si).

[0041] IGZO has a bandgap of approximately 3.0 to 3.5 eV, classifying it as a wide bandgap semiconductor. The conduction band bottom of IGZO is formed by the 5s orbitals of In, and the valence band top is formed by the 2p orbitals of O. The Fermi level (E_F) position can be tuned by the oxygen vacancy concentration, exhibiting n-type conductivity. The core of IGZO's conductivity lies in the carrier generation and transport mechanism. Electrons are the primary carriers in IGZO, and the entire conduction process consists of two steps: carrier generation and carrier transport, both related to material defects and electronic state characteristics.

[0042] In IGZO, the charge carriers (electrons) primarily originate from oxygen vacancies (V_O). This is illustrated through the IGZO TFT equivalent circuit. Figure 2As shown, the gate layer voltage modulates the carrier concentration in the conductive channel through the field effect. When the gate layer voltage is positive (which can also be understood as a positive gate voltage), the gate electric field causes the energy band at the interface between IGZO and the gate insulating layer 820 to bend, the Fermi level shifts above the mobility edge, and a high-concentration electron conductive channel is formed in the interface region, turning the device on. When the gate layer voltage is zero or negative (which can also be understood as a negative gate voltage), the electric field disappears, the electron concentration in the conductive channel decreases, the device turns off, and the leakage current is extremely low. For IGZO TFT devices, hydrogen ions and oxygen ions have a significant impact on the electrical properties of the IGZO film. Hydrogen ions typically act as donors, increasing the number of carriers and causing a negative shift in the threshold voltage Vth of the thin-film transistor. Oxygen ions can repair lattice oxygen vacancies, acting as acceptor compensation, reducing the number of carriers and causing a positive shift in the threshold voltage Vth of the thin-film transistor. Therefore, by adjusting the injection or extraction of hydrogen and oxygen ions, the core characteristics of IGZO TFTs, such as mobility and on / off ratio, can be controlled.

[0043] In some embodiments, the thickness of the photocatalytic transition layer 30 is 5 nm to 8 nm. The photocatalytic transition layer 30 is a transparent metal oxide semiconductor with photocatalytic activity, including but not limited to titanium dioxide (TiO2), zinc oxide (ZnO), tin oxide (SnO2), vanadium-doped titanium dioxide, nitrogen-doped titanium dioxide, and their composite structures.

[0044] In some embodiments, the photoresponsive composite reversible layer 20 is composed of an oxygen storage functional material and a hydrogen storage functional material. The oxygen storage functional material includes, but is not limited to, zinc oxide quantum dots (ZnO quantum dots), TiO2-based nanomaterials, SnO2-based oxygen vacancy materials, and Ga2O3-based materials. The hydrogen storage functional material includes, but is not limited to, poly(3-hexylthiophene) (P3HT), polyfluorene (PF), p-phenylene vinylene (PPV) derivatives, thermally activated delayed fluorescence (TADF) small molecule doped polymers, and polythiophene-based conjugated polymers.

[0045] In some embodiments, the photoresponsive composite reversible layer 20 is a composite layer of zinc oxide quantum dots (ZnO quantum dots) and poly(3-hexylthiophene) (P3HT). Both ZnO and P3HT exhibit specific storage and photoresponsive release characteristics for oxygen and hydrogen, respectively, and possess advantages such as energy level matching, uniform film formation, and good interfacial compatibility. The ZnO quantum dots have a size of 5 nm to 10 nm. The mass ratio of ZnO quantum dots to P3HT is 3:7, and the thickness is 40 nm to 60 nm. The surface of the ZnO quantum dots is rich in intrinsic oxygen vacancies, which specifically adsorb oxygen atoms, responsible for oxygen ion (O2) ionization. 2-P3HT stores hydrogen atoms through the specific adsorption of hydrogen atoms via the thiophene ring molecular chain, and is responsible for hydrogen ion (H+) storage. + Storage. ZnO quantum dots and P3HT, two functional sites with extremely high chemoselectivity and no cross-adsorption interference, naturally achieve the directional storage of hydrogen and oxygen ions. The photoresponsive composite reversible layer 20 achieves a storage saturation time of less than or equal to 10 seconds for hydrogen and oxygen ions, without external triggering, enabling automatic and directional storage of hydrogen and oxygen ions. Therefore, the photoresponsive composite reversible layer 20 can autonomously achieve the directional capture and stable storage of hydrogen and oxygen ions under conditions of room temperature, no light, zero bias voltage, and no external manual operation.

[0046] In oxide thin-film transistors (TFTs) operating at room temperature, without external light, and under zero bias, the photoresponsive composite reversible layer 20 automatically captures hydrogen and oxygen ions from the surrounding environment using its own chemical adsorption properties. These hydrogen and oxygen ions are self-supplied by the device's closed-loop system, requiring no external gas source or manual intervention. During the thin-film deposition, annealing, and spin-coating processes of the oxide TFT, trace amounts of bound water and oxygen-containing functional groups remain on the surfaces of the substrate, organic polymer films, inorganic oxide films, and in the interlayer gaps. At room temperature, these trace water molecules spontaneously dissociate, continuously providing active hydrogen and oxygen ions to the photoresponsive composite reversible layer 20. Trace amounts of air and water vapor remain within the TFT's encapsulation cavity, slowly diffusing to the film interfaces to continuously replenish hydrogen and oxygen ions, ensuring long-term cyclic storage requirements. Therefore, under room temperature, no light, and zero bias conditions, the hydrogen and oxygen ions captured by the photoresponsive composite reversible layer 20 originate from water vapor and air inside the device's encapsulation cavity, as well as residual bound water and oxygen-containing functional groups on the surfaces of the various functional films.

[0047] In some embodiments, the photocatalytic transition layer 30 is made of anatase titanium dioxide, which has advantages such as a matched ion transport barrier, high photocatalytic activity, and good interface compatibility, effectively promoting the transport of hydrogen ions and cations and reducing interface defects. The photocatalytic transition layer 30 can reduce the transport barrier of hydrogen ions and cations by greater than or equal to 0.3 eV, significantly improving the ion migration rate and ensuring a fast light-controlled response. The photocatalytic transition layer 30 can also fill the interface voids between the oxide channel layer 10 and the photoresponsive composite reversible layer 20, reducing the interface defect density to less than or equal to 10¹. 0 cm - ², reducing ion capture losses due to defects and improving ion transport efficiency and cycle stability. The photocatalytic transition layer 30 can also connect the oxide channel layer 10 and the photoresponsive composite reversible layer 20, adapting to flexible bending deformation and avoiding interlayer delamination and cracking.

[0048] Furthermore, the photocatalytic transition layer 30 enables the construction of continuous and stable vertical interface transport channels, constraining the directional movement of hydrogen and oxygen ions along the vertical direction of the film layer, preventing lateral diffusion and disordered dispersion of ions, and ensuring precise injection of hydrogen and oxygen ions into the oxide channel layer 10. Thus, the photocatalytic transition layer 30 is the core connecting functional layer for photo-controlled ion regulation of oxide thin-film transistors, possessing multiple functions such as photocatalytic activation, barrier reduction, directional ion transport, and interface defect passivation.

[0049] Thus, the P3HT molecules in the photoresponsive reversible layer 20 undergo photo-induced oxidation upon exposure to visible light, resulting in the directional breakage of the thiophene ring structure and the rapid release of stored hydrogen ions (H+). + Hydrogen ions (H+) + Under the catalytic action of the photocatalytic transition layer 30, the transport barrier is lowered, and hydrogen ions are directionally injected into the oxide channel layer 10 along the interface to fill internal oxygen vacancies, thereby reducing the threshold voltage of the oxide thin-film transistor. Throughout the visible light response process, the photoresponse time is less than or equal to 50 ms, and hydrogen ions (H+)... + The release efficiency is greater than or equal to 92%.

[0050] In the photoresponsive composite reversible layer 20, oxygen vacancies on the surface of ZnO quantum dots are excited by ultraviolet light, and electronic transitions break the adsorption equilibrium, rapidly releasing stored oxygen ions (O2). 2- Oxygen ions (O) 2- The oxygen ions (O2) are accelerated to transport through the photocatalytic transition layer 30 and directionally injected into the oxide channel layer 10, increasing the oxygen vacancy concentration inside the oxide channel layer 10 and raising the threshold voltage of the oxide thin-film transistor. Throughout the entire ultraviolet light response process, the photoresponse time is less than or equal to 30 ms, and the oxygen ion concentration is high. 2- The release efficiency is greater than or equal to 95%.

[0051] In some embodiments, the oxide thin-film transistor further includes an electrical sensing film 50. The electrical sensing film 50 is disposed between the oxide channel layer 10 and the photocatalytic transition layer 30, and is used as a sensing electrode to pick up changes in electrical signals at the interface of the oxide channel layer 10 and output a sense current.

[0052] In this embodiment, the electrical detection film 50 is integrated between the photocatalytic transition layer 30 and the oxide channel layer 10, making full-area contact with the oxide channel layer 10 to form an in-situ distributed sensing electrode. This is equivalent to integrating a set of distributed in-situ sensing electrodes inside the oxide thin-film transistor, enabling real-time signal acquisition. Furthermore, the electrical detection film 50 achieves interlayer embedded non-invasive sensing and parallel electrical signal coupling sampling without damaging the main device structure of the oxide thin-film transistor or interfering with its normal operation.

[0053] During the operation of the oxide thin-film transistor, the weak leakage current generated at the interlayer interface of the oxide channel layer 10 is conducted to the electrical detection film layer 50 through interface coupling. Furthermore, the electrical detection film layer 50, in conjunction with an external weak current sampling circuit, can capture the leakage current value and fluctuation changes in real time.

[0054] The core control module 70 controls the peripheral circuit to apply a small, low-frequency scanning voltage to the transparent gate layer 810. The current response signal of the oxide channel layer 10 is acquired in real time by the electrical probe film layer 50. Combined with the current change threshold voltage, the real-time threshold voltage of the oxide thin film transistor can be accurately calculated, realizing in-situ dynamic monitoring.

[0055] In some embodiments, the materials of the electrical detection film 50 include, but are not limited to, aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO), graphene, carbon nanotube films, and poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS).

[0056] In some embodiments, the electrical detection film 50 is made of transparent aluminum-doped zinc oxide (AZO) with a thickness of less than or equal to 4 nm. It is in a high-resistivity state when there is no light, thus not interfering with the normal operation of the device and causing no electrical interference. The electrical detection film 50 has advantages such as high transmittance, low resistance, interface matching with the transition layer, and no interference with the device's transmission characteristics. The electrical detection film 50 acts as a sensing electrode to pick up changes in the interface electrical signal of the oxide channel layer 10 and outputs an induced current to assist in the real-time monitoring of electrical parameters such as threshold voltage, leakage current, and mobility.

[0057] In some embodiments, the oxide thin-film transistor further includes a light-transmitting flexible substrate 60 and a core control module 70. A light-emitting array layer 40 is disposed on the surface of the thin-film stacked region of the light-transmitting flexible substrate 60. The core control module 70 is disposed on the surface of the non-thin-film stacked region of the light-transmitting flexible substrate 60. The core control module 70 is electrically connected to an electrical detection film layer 50 and is used to determine a threshold voltage based on the induced current.

[0058] In this embodiment, the light-transmitting flexible substrate 60 serves as the substrate supporting the thin-film stacked structure. It not only provides support but also allows light to pass through and blocks moisture intrusion. The thin-film stacked region of the light-transmitting flexible substrate 60 can be understood as the region where film layers are sequentially stacked along the vertical direction of the film layers, or as the functional region of an oxide thin-film transistor, supporting nanoscale optical, semiconductor, and conductive functional structures. The non-thin-film stacked region of the light-transmitting flexible substrate 60 can be understood as the region without stacked film layers, or as the non-functional region of an oxide thin-film transistor.

[0059] The core control module 70 is disposed on the surface of the non-thin film stack region of the transparent flexible substrate 60, and is not embedded inside the thin film stack, so it does not affect the function of each film layer in the thin film stack region. The electrical detection film layer 50 acts as a sensing electrode to pick up changes in electrical signals at the interface of the oxide channel layer 10 and outputs an induced current to the core control module 70. The core control module 70 is electrically connected to the electrical detection film layer 50, enabling it to receive the induced current signal and determine the threshold voltage of the oxide thin film transistor based on the induced current.

[0060] In some embodiments, the core control module 70 is electrically connected to the electrical detection film layer 50, and is used to determine leakage current and mobility based on the induced current. Leakage current and mobility serve as auxiliary state determination parameters. The threshold voltage, leakage current, and mobility work together to achieve full-dimensional device monitoring, fault classification, and lifespan warning.

[0061] Leakage current can help distinguish the causes of threshold voltage drift, thus accurately avoiding erroneous control. There are two core causes of threshold voltage drift: one is an imbalance between the storage and release of hydrogen and oxygen ions, and the other is leakage current abnormality caused by increased defects at the membrane interface and / or membrane aging, which belongs to non-ion imbalance. By combining leakage current analysis, the fault type can be accurately distinguished, avoiding blind triggering of photocontrol and improving control accuracy.

[0062] Due to prolonged bending, exposure to light, and cyclic operation, the mobility of devices will irreversibly decline. By monitoring the mobility, the transmission performance degradation state of oxide thin-film transistors can be dynamically assessed, the remaining lifespan can be determined, and early warning can be provided.

[0063] When regulating the light-emitting array layer 40, the core control module 70 uses the threshold voltage as the control basis and distinguishes whether the threshold drift is caused by ion imbalance, interface leakage, or film defects based on the leakage current. Mobility is used to evaluate the transmission performance of the oxide channel layer 10 and the degree of device aging in real time. Therefore, by electrically connecting the core control module 70 to the electrical detection film layer 50, and determining the threshold voltage, leakage current, and mobility based on the induced current, a multi-parameter linkage monitoring system can be realized. This system can dynamically optimize the light control duration and intensity to adapt to the device regulation requirements of different aging states.

[0064] In some embodiments, the light-transmitting flexible substrate 60 may be a light-transmitting flexible PI substrate with a thickness of 50 μm to 75 μm, a light transmittance greater than or equal to 90%, and a coefficient of thermal expansion less than or equal to 20 × 10⁻⁶. -6 / ℃. The flexible bending radius of the light-transmitting substrate 60 is less than or equal to 5mm, and it remains free of cracks and film peeling even after being bent thousands of times.

[0065] The light-transmitting flexible substrate 60 is made of a flexible transparent polymer material, including but not limited to polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyurethane (PU), and elastomer copolymers.

[0066] In some embodiments, the light-transmitting flexible substrate 60 is polyimide (PI), which has excellent heat resistance, dimensional stability, high light transmittance and bending resistance, and is highly compatible with the low-temperature film formation process in the subsequent preparation process.

[0067] In some embodiments, the core control module 70 is also electrically connected to the light emitting array layer 40 and is used to control the light emitting array layer 40 to emit visible light to the light-response composite reversible layer 20 when the threshold voltage is less than the first preset voltage.

[0068] In this embodiment, the core control module 70 is electrically connected to the electrical detection film layer 50 and determines the threshold voltage based on the induced current. In some embodiments, the normal range of the threshold voltage is -1.1V to -0.5V, with a drift threshold of ±0.25V. The first preset voltage is set to -1.1V - 0.25V = -1.35V. Furthermore, the core control module 70 compares the threshold voltage with the first preset voltage. When the threshold voltage is less than the first preset voltage, indicating a low threshold voltage, the core control module 70 controls the light emitting array layer 40 to emit visible light to the photoresponsive composite reversible layer 20, thereby exciting the photoresponsive composite reversible layer 20 to release hydrogen ions (H+). + ) to regulate.

[0069] In some embodiments, the core control module 70 is also electrically connected to the light emitting array layer 40 and is used to control the light emitting array layer 40 to emit ultraviolet light to the photoresponse composite reversible layer 20 when the threshold voltage is greater than the second preset voltage.

[0070] In this embodiment, the second preset voltage and the first preset voltage can be set according to the actual application scenario and can vary with the oxide thin-film transistor. This application does not impose specific limitations. In some embodiments, the second preset voltage is set to -0.5V + 0.25V = -0.25V. The core control module 70 judges the threshold voltage and the second preset voltage. When the threshold voltage is greater than the second preset voltage, it indicates that the threshold voltage is too high. The core control module 70 controls the light emitting array layer 40 to emit ultraviolet light to the photoresponsive composite reversible layer 20 to excite the photoresponsive composite reversible layer 20 to release oxygen ions (O²⁻). - ) to regulate.

[0071] Through hydrogen ions (H + ) and oxygen ions (O²) -After adjustment, when the threshold voltage meets the normal range, the core control module 70 controls the light emitting array layer 40 to turn off, stopping the illumination. The photoresponsive reversible composite layer 20 then automatically recaptures hydrogen ions (H+) from the surrounding environment. + ) and oxygen ions (O²) - ), quickly complete storage reset, and realize hydrogen ion (H) + ) and oxygen ions (O²) - A reversible loop for storing and releasing data.

[0072] Therefore, the oxide thin-film transistor provided in this application, through the dual-functional interface structure of the photoresponsive composite reversible layer 20 and the photocatalytic transition layer 30, and combined with the hierarchical triggering mechanism of visible and ultraviolet light emitted by the light-emitting array layer 40, achieves bidirectional selective storage, directional transport, and precise release of hydrogen and oxygen ions. Furthermore, the automatic linkage between electrical detection and light modulation is achieved through the electrical detection film layer 50 and the core control module 70, enabling automatic performance monitoring and automatic adjustment and repair without manual triggering, perfectly adapting to the application requirements of flexible, low-power, and long-term stable use. Thus, the oxide thin-film transistor provided in this application integrates detection, control, and light triggering into a unified structure, achieving self-monitoring, self-repair, and self-regulation of device performance without manual operation or external equipment.

[0073] In some embodiments, the core control module 70 employs a low-power microcontroller unit (MCU), which is a miniature discrete microdevice, independently integrated. The core control module 70 is electrically connected to the electrical detection film layer 50 and the optical emission array layer 40, and is responsible for signal reception, computational judgment, and trigger control. The core control module 70 operates at a voltage less than or equal to 1.8V, and its overall power consumption is less than or equal to 5μW, meeting the requirements of low-power devices.

[0074] In some embodiments, the light-emitting array layer 40 includes a light-emitting diode array 410 and an array insulating layer 420. The light-emitting diode array 410 is disposed on the surface of the thin film stacked region of the light-transmitting flexible substrate 60. The core control module 70 is connected to the light-emitting diode array 410 and is used to control the light-emitting diode array 410 to emit visible light and ultraviolet light. The array insulating layer 420 is disposed on the surface of the thin film stacked region of the light-transmitting flexible substrate 60 and covers the light-emitting diode array 410.

[0075] In this embodiment, the light-emitting diode array 410 can be understood as an array formed by multiple light-emitting diodes. The core control module 70 is connected to the light-emitting diode array 410 and can control multiple visible light diodes 411 and multiple ultraviolet light diodes 412 to emit visible light and ultraviolet light. The array insulating layer 420 is disposed on the surface of the thin film stacked region of the light-transmitting flexible substrate 60 and covers the light-emitting diode array 410, thus providing insulation and preventing electrical short circuits.

[0076] In some embodiments, the array insulating layer 420 is made of aluminum oxide (Al2O3) with a thickness of 2nm to 4nm, specifically 3nm. This not only avoids electrical short circuits but also does not affect the device's light transmittance and flexible bending performance.

[0077] In some embodiments, the diodes in the light-emitting diode array 410 can be miniature light-emitting diodes (LEDs) or miniature organic light-emitting diodes (Organic Light-emitting Diodes). Light-emitting diodes (LEDs), including OLEDs, micro / nano laser devices, quantum dot light-emitting devices, inorganic ultraviolet LEDs, and visible LEDs, etc. The emission band of the LED array 410 covers the 250nm to 350nm ultraviolet light and the 400nm to 600nm visible light bands as needed. The type of diodes in the LED array 410 can be determined based on luminous efficiency, device lifetime, flexibility, and process compatibility.

[0078] In some embodiments, the light-emitting diode array 410 employs miniature inorganic ultraviolet light-emitting diodes 412 and miniature inorganic visible light-emitting diodes 411, such as... Figure 1 As shown. The individual device size of the miniature inorganic ultraviolet light-emitting diode 412 and the miniature inorganic visible light-emitting diode 411 is less than or equal to 10 μm, and the total thickness is less than or equal to 15 nm.

[0079] Multiple miniature inorganic ultraviolet light-emitting diodes 412 and multiple miniature inorganic visible light-emitting diodes 411 are alternately arranged on the surface of the thin film stacked region of the light-transmitting flexible substrate 60. This configuration offers advantages such as fast response speed, low power consumption, long lifespan, stable spectrum, bend resistance, and strong compatibility with flexible thin film processes. It can simultaneously cover both 250nm to 350nm ultraviolet light and 400nm to 600nm visible light bands, meeting the light control requirements of this device. The visible light intensity ranges from 100W / cm² to 200mW / cm², and the ultraviolet light intensity ranges from 80W / cm² to 150mW / cm².

[0080] In some embodiments, the wavelength of visible light is 450 nm, and the intensity of visible light is 150 mW / cm². The wavelength of ultraviolet light is 300 nm, and the intensity of ultraviolet light is 120 mW / cm². The visible and ultraviolet light emitted by the LED array 410 can penetrate all the front film layers with low loss and accurately illuminate the photoresponsive composite reversible layer 20. No external operating voltage or high-temperature triggering is required throughout the process; control is achieved through photo-triggered activation, thus reducing overall power consumption.

[0081] In some embodiments, the oxide thin-film transistor further includes a transparent gate layer 810 and a gate insulating layer 820. The transparent gate layer 810 is disposed on the surface of the array insulating layer 420 away from the transparent flexible substrate 60. The gate insulating layer 820 is disposed on the surface of the array insulating layer 420 away from the transparent flexible substrate 60, and the gate insulating layer 820 covers the transparent gate layer 810. The oxide channel layer 10 is disposed on the surface of the gate insulating layer 820 away from the transparent gate layer 810.

[0082] In this embodiment, the transparent gate layer 810 can be made of transparent conductive oxide, metal nanowire, conductive polymer or composite transparent conductive structure, including but not limited to indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), silver nanowire (AgNW), copper nanowire (CuNW), poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) and its composite structure.

[0083] The gate insulating layer 820 can be made of transparent inorganic insulating material or organic or inorganic composite insulating material, including but not limited to alumina (Al2O3), silicon oxide (SiO2), and silicon nitride (SiN). x Hafnium oxide (HfO2), tantalum oxide (Ta2O5), zirconium oxide (ZrO2), polyimide polymer insulating layers and their stacked structures.

[0084] In some embodiments, the light-transmitting gate layer 810 is made of indium tin oxide (ITO) material, which has the characteristics of low sheet resistance, high light transmittance, good density, excellent adhesion to flexible substrate, and mature process that is easy to mass-produce.

[0085] In some embodiments, the thickness of the light-transmitting gate layer 810 is 100 nm to 130 nm, and the sheet resistance is less than or equal to 10 Ω / m. 2 The light transmittance is greater than or equal to 85%, and the adhesion is greater than or equal to 4BASTM D3359, demonstrating excellent film adhesion. During bending, the light-transmitting grid layer 810 is not prone to peeling or detachment.

[0086] In some embodiments, the gate insulating layer 820 is made of alumina (Al2O3) material with a thickness of 70 nm to 100 nm. The leakage current of the gate insulating layer 820 is less than or equal to 10 Nm. -9 A / cm², breakdown voltage greater than or equal to 80V, light transmittance greater than or equal to 90%, interface defect density less than or equal to 10¹¹ cm² - ² It possesses high density, low interface defects, low leakage current, and excellent ultrathin film formation properties, and the subsequent preparation method has a moderate preparation process temperature, making it suitable for flexible substrates.

[0087] In some embodiments, the oxide thin-film transistor further includes a light-transmitting electrode layer 910 and a light-transmitting drain layer 920. The light-transmitting electrode layer 910 is disposed on the surface of the photoresponsive composite reversible layer 20 away from the photocatalytic transition layer 30, and the light-transmitting electrode layer 910 is in ohmic contact with the oxide channel layer 10.

[0088] The light-transmitting drain layer 920 and the light-transmitting source layer 910 are disposed at intervals on the surface of the photoresponsive composite reversible layer 20 away from the photocatalytic transition layer 30, and the light-transmitting drain layer 920 is in ohmic contact with the oxide channel layer 10.

[0089] In this embodiment, the light-transmitting electrode layer 910 and the light-transmitting drain electrode layer 920 can be made of transparent conductive oxide, metal nanowires, conductive polymers or composite transparent conductive structures, including but not limited to indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), silver nanowires (AgNW), copper nanowires (CuNW), poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) and their composite structures.

[0090] The light-transmitting electrode layer 910 and the light-transmitting drain layer 920 serve as metal electrodes, achieving ohmic contact with the oxide channel layer 10. The light-transmitting electrode layer 910 and the light-transmitting drain layer 920 serve as the current input and output terminals of the oxide thin-film transistor, forming ohmic contact with the oxide channel layer 10 for transmitting drive current.

[0091] In some embodiments, the light-transmitting electrode layer 910 and the light-transmitting drain electrode layer 920 are made of indium tin oxide (ITO) material, with a thickness of 100 nm to 130 nm and a contact resistance of less than or equal to 10 Nm. -4 Ω·cm, sheet resistance less than or equal to 10Ω / m 2 The light transmittance is greater than or equal to 85%.

[0092] Please see Figure 3 This application provides a method for fabricating an oxide thin-film transistor, comprising: Step S110: Provide the optical emission array layer 40; Step S120: An oxide channel layer 10 is prepared on one side of the light emitting array layer 40; Step S130: Deposit a transparent metal oxide film layer with photocatalytic activity on the side of the oxide channel layer 10 away from the light emitting array layer 40 to obtain the photocatalytic transition layer 30. In step S140, a composite film layer with oxygen storage and hydrogen storage functions is spin-coated on the side of the photocatalytic transition layer 30 away from the oxide channel layer 10 to obtain a photoresponsive composite reversible layer 20.

[0093] Among them, the photoresponsive composite reversible layer 20 is used to store hydrogen ions and oxygen ions, and releases hydrogen ions under visible light and oxygen ions under ultraviolet light. The photocatalytic transition layer 30 is used to directionally transport hydrogen ions released by the photoresponsive composite reversible layer 20 to the oxide channel layer 10 under visible light, and to directionally transport oxygen ions released by the photoresponsive composite reversible layer 20 to the oxide channel layer 10 under ultraviolet light. The light-emitting array layer 40 is used to emit visible light to the photocatalytic transition layer 30 and the photoresponsive composite reversible layer 20, and is also used to emit ultraviolet light to the photocatalytic transition layer 30 and the photoresponsive composite reversible layer 20.

[0094] In this embodiment, in step S110, the description of the light-emitting array layer 40 can be found in the descriptions in the above embodiments. In step S120, the description of the oxide channel layer 10 can be found in the descriptions in the above embodiments. In step S130, the description of the photocatalytic transition layer 30 can be found in the descriptions in the above embodiments. In step S140, the description of the photoresponsive composite reversible layer 20 can be found in the descriptions in the above embodiments.

[0095] In some embodiments, prior to step S110, the method for fabricating an oxide thin-film transistor further includes: Step S101: Provide a transparent flexible film layer of 50μm to 75μm, introduce high-purity argon gas into the plasma chamber, ionize it to form argon plasma under RF power conditions of 200W to 300W, bombard the surface of the transparent flexible film layer with argon plasma, and control the treatment time to 3min to 5min to prepare a light-transmitting flexible substrate 60.

[0096] In this embodiment, in step S101, by bombarding the transparent flexible film layer with argon plasma, the surface roughness of the prepared light-transmitting flexible substrate 60 can be optimized, thereby improving the adhesion of the film layer.

[0097] In some embodiments, step S110, providing the light emitting array layer 40, includes: Step S111: Using micro-nano printing and thin film deposition technology, a film layer is prepared on the surface of the thin film stacked region of the light-transmitting flexible substrate 60, and the film formation region is patterned by photolithography patterning process to prepare the light-emitting diode array 410. In step S112, an aluminum oxide thin film is deposited on the surface of the thin film stacked region of the light-transmitting flexible substrate 60 and the surface of the light-emitting diode array 410 to prepare the array insulating layer 420.

[0098] In this embodiment, aluminum oxide film layers are deposited on both the surface of the thin film stacked region of the light-transmitting flexible substrate 60 and the surface of the light-emitting diode array 410. This can also be understood as the global deposition of aluminum oxide film layers, so that the prepared array insulating layer 420 covers the light-emitting diode array 410, achieving electrical isolation.

[0099] In some embodiments, after step S112, depositing an aluminum oxide thin film on the surface of the thin film stack region of the light-transmitting flexible substrate 60 and the surface of the light-emitting diode array 410 to prepare the array insulating layer 420, the method for preparing the oxide thin film transistor further includes: Step S113: At room temperature, an indium tin oxide thin film is prepared on the surface of the array insulating layer 420 by magnetron sputtering, and the indium tin oxide thin film is photolithographically patterned to prepare a transparent gate layer 810. In step S114, an aluminum oxide thin film is deposited on the surface of the transparent gate layer 810 and the surface of the array insulating layer 420 using atomic layer deposition (ALD) to prepare the gate insulating layer 820.

[0100] In some embodiments, step S120, which involves fabricating an oxide channel layer 10 on one side of the light-emitting array layer 40, includes: Step S121: On the surface of the gate insulating layer 820, an IGZO target with an In, Ga, and Zn atomic ratio of 1:1:1 is used to magnetron sputter a film in an atmosphere with an argon (Ar) to oxygen (O2) volume ratio of 9:1, and the film is annealed at a temperature of 200°C to 250°C for 30 to 40 minutes to prepare an oxide channel layer 10.

[0101] In this embodiment, after annealing in step S121, the grain size is uniform, resulting in a mobility of oxide channel layer 10 greater than or equal to 15 cm² / (V·s) and an on / off ratio greater than or equal to 10. 8 .

[0102] In some embodiments, after step S121, the method for fabricating an oxide thin-film transistor further includes: In step S122, an aluminum-doped zinc oxide (AZO) thin film is deposited on the surface of the oxide channel layer 10 using a magnetron sputtering process, and the aluminum-doped zinc oxide (AZO) thin film is patterned by photolithography to prepare an electrical detection film layer 50.

[0103] In some embodiments, after step S122, in step S130, a transparent metal oxide film layer with photocatalytic activity is deposited on the side of the oxide channel layer 10 away from the light-emitting array layer 40 to obtain a photocatalytic transition layer 30, including: Step S131: Using the ALD process, an anatase phase titanium dioxide thin film is deposited on the surface of the electrical detection film layer 50 to prepare the photocatalytic transition layer 30.

[0104] In some embodiments, after step S131, in step S140, a composite film layer with oxygen storage and hydrogen storage functions is spin-coated on the side of the photocatalytic transition layer 30 away from the oxide channel layer 10 to obtain a photoresponsive composite reversible layer 20, including: Step S141: Using a solution spin-coating process, a composite film of ZnO quantum dots and P3HT is spin-coated on the surface of the photocatalytic transition layer 30 to prepare a photoresponsive composite reversible layer 20.

[0105] In some embodiments, after step S141, the method for fabricating an oxide thin-film transistor further includes: In step S142, at room temperature, an indium tin oxide (ITO) thin film is deposited on the surface of the photoresponsive composite reversible layer 20 using magnetron sputtering. The ITO thin film is then patterned using photolithography and etching processes to form an ohmic contact between the patterned ITO thin film and the oxide channel layer 10, thereby preparing the light-transmitting electrode layer 910 and the light-transmitting drain layer 920.

[0106] In some embodiments, after step S142, the method for fabricating an oxide thin-film transistor further includes: In step S143, leads and pads are prepared on the surface of the non-thin film stacked area of ​​the light-transmitting flexible substrate 60, and the core control module 70 is bound to the pads by a micro flip-chip bonding process or a flexible conductive adhesive bonding process, and electrically connected to the light-emitting diode array 410 and the electrical detection film layer 50 by the leads.

[0107] The oxide thin-film transistor (OTTFT) fabrication method provided in this application produces an OTFT with a bottom-gate top-contact flexible structure, including a transparent flexible substrate 60, a light-emitting diode array 410, an array insulating layer 420, a transparent gate layer 810, a gate insulating layer 820, an oxide channel layer 10, an electrical detection film layer 50, a photocatalytic transition layer 30, a photoresponsive composite reversible layer 20, a transparent source electrode layer 910, a transparent drain layer 920, and a core control module 70. The OTFT provided in this application integrates the light-emitting diode array 410, the electrical detection film layer 50, and the core control module 70, forming a light-controlled device with integrated structure and function. All functional films in the OTFT provided in this application are wide-bandgap transparent optical materials, with transmittance greater than or equal to 85% in the 250nm-350nm ultraviolet light and 400nm-600nm visible light bands, exhibiting no significant light absorption or loss. Furthermore, all the films in the oxide thin-film transistor provided in this application are nanoscale ultrathin films, with a maximum thickness of no more than 130 nm, resulting in extremely low scattering and attenuation losses. The array insulating layer 420 and the electrical detection film layer 50 are ultrathin films that do not obstruct the light path, ensuring that light reaches the target layer efficiently and stably triggers the photoinduced ion release reaction.

[0108] The oxide thin-film transistor provided in this application was tested and found that the oxide thin-film transistor had a cycle count of 300 times or more, a threshold voltage drift of less than or equal to ±0.1V after cycling, a photoresponse speed attenuation of 5% or more, and no significant attenuation in electrical performance and light transmittance after 1000 bending cycles.

[0109] Please see Figure 4 This application provides a hydrogen-oxygen regulation method, which performs hydrogen-oxygen regulation based on the oxide thin-film transistor in any of the above embodiments. The method includes: Step S210: Send a visible light trigger signal and / or an ultraviolet light trigger signal to the light emitting array layer 40; In step S220, the light emitting array layer 40 emits visible light and / or ultraviolet light to the photocatalytic transition layer 30 and the photoresponsive composite reversible layer 20 according to the visible light trigger signal and / or ultraviolet light trigger signal. In step S230, the photoresponsive composite reversible layer 20 responds to visible light and / or ultraviolet light, releasing hydrogen ions and / or oxygen ions; In step S240, the photocatalytic transition layer 30 responds to visible light and / or ultraviolet light to directionally transport hydrogen ions and / or oxygen ions to the oxide channel layer 10.

[0110] In this embodiment, the descriptions of steps S210, S220, S230, and S240 can be found in the descriptions in the above embodiments. The hydrogen-oxygen control method provided in this application requires no external gate voltage and no high-temperature triggering.

[0111] In step S210, the core control module 70 sends a visible light trigger signal and / or an ultraviolet light trigger signal to the light emitting array layer 40. In step S220, the light emitting array layer 40 emits visible light and / or ultraviolet light to the photocatalytic transition layer 30 and the photoresponsive composite reversible layer 20 according to the visible light trigger signal and / or the ultraviolet light trigger signal.

[0112] In the photoresponsive reversible composite layer 20, P3HT molecules undergo photo-induced oxidation upon photoexcitation, resulting in the directional breakage of the thiophene ring structure and the rapid release of stored hydrogen ions. Under the catalytic action of the photocatalytic transition layer 30, the hydrogen ions lower the transport barrier and are directionally injected into the oxide channel layer 10 along the interface, filling oxygen vacancies inside the oxide channel layer 10 and reducing the device threshold voltage.

[0113] In the photoresponsive composite reversible layer 20, oxygen vacancies on the ZnO quantum dot surface are photoexcited, and electron transitions break the adsorption equilibrium, rapidly releasing stored oxygen ions. These oxygen ions are then accelerated through the photocatalytic transition layer 30 and directionally injected into the oxide channel layer 10, increasing the oxygen vacancy concentration inside the active layer and raising the device threshold voltage.

[0114] In some embodiments, prior to step S210, the hydrogen-oxygen regulation method further includes: Step S201: The electrical detection film layer 50 detects the change in electrical signal at the interface of the oxide channel layer 10 and outputs an induced current. Step S202: Obtain the induced current and determine the threshold voltage based on the induced current; Step S203: When the threshold voltage is less than the first preset voltage, a visible light trigger signal is sent to the light emitting array layer 40; Step S204: When the threshold voltage is greater than the second preset voltage, send an ultraviolet light trigger signal to the light emitting array layer 40.

[0115] In this embodiment, the descriptions of steps S201, S202, S203, and S204 can be found in the descriptions in the above embodiments.

[0116] In some embodiments, after step S240, the hydrogen-oxygen regulation method further includes: Step S250: Execute steps S201 and S202. When the threshold voltage meets the normal range, control the optical emission array layer 40 to turn off. Step S260, the photoresponsive composite reversible layer 20 recaptures hydrogen ions (H+) from the surrounding environment.+ ) and oxygen ions (O²) - ), complete the storage reset.

[0117] In this embodiment, the descriptions of steps S250 and S260 can be found in the descriptions in the above embodiments.

[0118] The oxide thin-film transistor, fabrication method, and hydrogen-oxygen modulation method provided in this application realize the storage and release of light-controlled bidirectional hydrogen and oxygen ions, solving the problems of harsh triggering conditions, high power consumption, poor flexibility, single modulation, and poor cycle stability in traditional technologies, and filling the technological gap of flexible low-power light-controlled IGZO devices.

[0119] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0120] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0121] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0122] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0123] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0124] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0125] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. An oxide thin-film transistor, characterized in that, include: Oxide trench layer (10); A photoresponsive composite reversible layer (20) is disposed on one side of the oxide channel layer (10) for storing hydrogen ions and oxygen ions, and releasing hydrogen ions under visible light and releasing oxygen ions under ultraviolet light; the photoresponsive composite reversible layer (20) is a composite film layer with oxygen storage function and hydrogen storage function. A photocatalytic transition layer (30) is disposed between the photoresponsive composite reversible layer (20) and the oxide channel layer (10) for directional transport of hydrogen ions released by the photoresponsive composite reversible layer (20) to the oxide channel layer (10) under visible light and for directional transport of oxygen ions released by the photoresponsive composite reversible layer (20) to the oxide channel layer (10) under ultraviolet light. A light-emitting array layer (40) is disposed on the other side of the oxide channel layer (10) for emitting visible light to the photocatalytic transition layer (30) and the photoresponsive composite reversible layer (20). The light-emitting array layer (40) is also used to emit ultraviolet light to the photocatalytic transition layer (30) and the photoresponsive composite reversible layer (20).

2. The oxide thin-film transistor as claimed in claim 1, characterized in that, The oxide thin-film transistor further includes: An electrical detection film (50) is disposed between the oxide channel layer (10) and the photocatalytic transition layer (30) and is used as a sensing electrode to pick up the electrical signal change at the interface of the oxide channel layer (10) and output an induced current.

3. The oxide thin-film transistor as described in claim 2, characterized in that, The oxide thin-film transistor further includes: A light-transmitting flexible substrate (60) is provided, wherein the light-emitting array layer (40) is disposed on the surface of the thin film stack region of the light-transmitting flexible substrate (60); The core control module (70) is disposed on the surface of the non-thin film stacked region of the light-transmitting flexible substrate (60); The core control module (70) is electrically connected to the electrical detection film (50) and is used to determine the threshold voltage based on the induced current.

4. The oxide thin-film transistor as described in claim 3, characterized in that, The core control module (70) is also electrically connected to the light emitting array layer (40) and is used to control the light emitting array layer (40) to emit visible light to the light-response composite reversible layer (20) when the threshold voltage is less than the first preset voltage.

5. The oxide thin-film transistor as claimed in claim 3, characterized in that, The core control module (70) is also electrically connected to the light emitting array layer (40) and is used to control the light emitting array layer (40) to emit ultraviolet light to the photoresponse composite reversible layer (20) when the threshold voltage is greater than the second preset voltage.

6. The oxide thin-film transistor according to any one of claims 3 to 5, characterized in that, The optical emission array layer (40) includes: A light-emitting diode array (410) is disposed on the surface of the thin film stacked region of the light-transmitting flexible substrate (60) and connected to the core control module (70) for controlling the light-emitting diode array (410) to emit visible light and ultraviolet light; An array insulating layer (420) is disposed on the surface of the thin film stack region of the light-transmitting flexible substrate (60), and the array insulating layer (420) covers the light-emitting diode array (410).

7. The oxide thin-film transistor as claimed in claim 6, characterized in that, The oxide thin-film transistor further includes: A light-transmitting gate layer (810) is disposed on the surface of the array insulating layer (420) away from the light-transmitting flexible substrate (60); A gate insulating layer (820) is disposed on the surface of the array insulating layer (420) away from the light-transmitting flexible substrate (60), and the gate insulating layer (820) covers the light-transmitting gate layer (810); The oxide channel layer (10) is disposed on the surface of the gate insulating layer (820) away from the light-transmitting gate layer (810).

8. The oxide thin-film transistor as claimed in claim 6, characterized in that, The oxide thin-film transistor further includes: A light-transmitting electrode layer (910) is disposed on the surface of the photoresponsive composite reversible layer (20) away from the photocatalytic transition layer (30), and the light-transmitting electrode layer (910) is in ohmic contact with the oxide channel layer (10); A light-transmitting drain layer (920) is disposed at a distance from the light-transmitting light-transmitting drain layer (910) on the surface of the photoresponsive composite reversible layer (20) away from the photocatalytic transition layer (30), and the light-transmitting drain layer (920) is in ohmic contact with the oxide channel layer (10).

9. A method for fabricating an oxide thin-film transistor, characterized in that, include: Provides an optical emission array layer (40); An oxide channel layer (10) is prepared on one side of the light emitting array layer (40). A transparent metal oxide film with photocatalytic activity is deposited on the side of the oxide channel layer (10) away from the light emission array layer (40) to obtain a photocatalytic transition layer (30). A composite film layer with oxygen storage and hydrogen storage functions is spin-coated on the side of the photocatalytic transition layer (30) away from the oxide channel layer (10) to obtain a photoresponsive composite reversible layer (20). The photoresponsive composite reversible layer (20) is used to store hydrogen ions and oxygen ions, and releases hydrogen ions under visible light and oxygen ions under ultraviolet light. The photocatalytic transition layer (30) is used to directionally transport hydrogen ions released by the photoresponsive composite reversible layer (20) to the oxide channel layer (10) under visible light and to directionally transport oxygen ions released by the photoresponsive composite reversible layer (20) to the oxide channel layer (10) under ultraviolet light. The light-emitting array layer (40) is used to emit visible light to the photocatalytic transition layer (30) and the photoresponsive composite reversible layer (20), and is also used to emit ultraviolet light to the photocatalytic transition layer (30) and the photoresponsive composite reversible layer (20).

10. A method for regulating hydrogen and oxygen, characterized in that, Hydrogen-oxygen modulation based on an oxide thin-film transistor as described in any one of claims 1 to 8, the method comprising: Send visible light trigger signals and / or ultraviolet light trigger signals to the light emitting array layer (40); The light-emitting array layer (40) emits visible light and / or ultraviolet light to the photocatalytic transition layer (30) and the photoresponsive composite reversible layer (20) according to the visible light trigger signal and / or ultraviolet light trigger signal. The photoresponsive composite reversible layer (20) responds to visible light and / or ultraviolet light, releasing hydrogen ions and / or oxygen ions; The photocatalytic transition layer (30) responds to visible light and / or ultraviolet light to directionally transport hydrogen ions and / or oxygen ions to the oxide channel layer (10).

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