Vacuum chucking wafer table and control method

Abstract

The application belongs to the technical field of semiconductor and provides a vacuum adsorption wafer table and a control method. The wafer table comprises a wafer table base body including a first table surface and a second table surface, the first table surface is attached to a wafer, and the second table surface is attached to a machine table; a first annular adsorption area is arranged on the first table surface; a second annular adsorption area is arranged on the first table surface, and the diameter of the first annular adsorption area is greater than that of the second annular adsorption area; the first annular adsorption area and the second annular adsorption area are both in communication with an air duct in the wafer table base body; a plurality of sensing parts are uniformly distributed at positions close to the edge of the second table surface of the wafer table base body; and a plurality of temperature control parts are uniformly distributed on the side surface of the wafer table base body. The application realizes rapid adsorption, stable clamping and uniform stress on the wafer by optimizing the adsorption structure and air duct layout, and reduces thermal deformation in the processing process by cooperating with temperature control, so as to ensure wafer processing precision and also meet the requirement of rapid wafer loading and unloading in the wafer processing process while ensuring wafer surface shape precision.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a vacuum adsorption wafer stage and its control method. Background Technology

[0002] In the semiconductor chip manufacturing process, wafers need to complete a number of ultra-high precision processing steps such as coating, exposure, etching, and deposition. The processing yield, dimensional accuracy, and production stability of the above core processes directly depend on the wafer stage's clamping and positioning accuracy, adsorption stability, and wafer surface shape retention effect. As the core carrier and positioning component for wafer processing, the wafer stage's performance is a fundamental core condition for ensuring the precision manufacturing of semiconductor chips.

[0003] Currently, vacuum adsorption wafer stage is the mainstream equipment for fixing wafers in semiconductor processes. Its working principle mainly relies on the rigid bonding between the wafer and the wafer stage surface to form a vacuum sealed space. The wafer is fixed by vacuum negative pressure, providing a stable, flat and controllable processing reference surface for various precision processing steps of the wafer. It can effectively meet the basic positioning and fixing requirements of conventional wafer processing and is the most widely used wafer support structure in current semiconductor mass production lines.

[0004] As semiconductor manufacturing processes continue to advance towards greater precision and miniaturization, the requirements for chip processing accuracy are constantly increasing. Simultaneously, the demands for efficiency in automated production lines are constantly rising. The technical limitations of existing conventional vacuum adsorption wafer stages are becoming increasingly apparent, making them unsuitable for the production needs of high-end semiconductors. Currently, conventional wafer stages mostly employ gas channel structures with uniform adsorption over the entire surface or localized point adsorption, which have several drawbacks in practical applications: Firstly, traditional adsorption structures cannot simultaneously meet the requirements of rapid wafer loading and unloading and high-precision stable clamping. Either the clamping accuracy is low, which cannot match the high-precision operation requirements of automated machines, resulting in poor wafer processing accuracy; or the vacuum adsorption and stabilization time is extended to ensure clamping stability, further restricting the increase in production line capacity.

[0005] Secondly, traditional adsorption methods are prone to causing uneven stress on the wafer. The negative pressure force of conventional adsorption structures is concentrated in a local area of ​​the wafer, which cannot achieve uniform stress on the entire surface of the wafer. During precision processing, this can easily cause local deformation and warping of the wafer, resulting in surface distortion problems. This directly affects key process indicators such as wafer processing uniformity, exposure alignment accuracy, and etching depth consistency, significantly reducing wafer processing accuracy and product yield.

[0006] Third, uneven stress on the wafer can lead to wafer positioning misalignment and loose clamping during processing, causing production problems such as processing defects and wafer breakage. At the same time, the local stress concentration caused by uneven stress will exacerbate the stress deviation on the wafer stage, indirectly affecting the service life of the equipment and the stability of the process.

[0007] In addition, the existing wafer stage vacuum adsorption structure cannot accurately match the ring-shaped force characteristics of the wafer, and the uniformity of the stage bonding and negative pressure adsorption is insufficient. Coupled with the influence of temperature fluctuations during the processing, the wafer surface accuracy error is further amplified, making it difficult to meet the mass production processing requirements of high-end semiconductor chips that require ultra-high precision, high stability, and high efficiency.

[0008] It should be noted that the above description does not necessarily constitute prior art. Summary of the Invention

[0009] This invention provides a vacuum adsorption wafer stage and control method to solve the defects of low wafer loading and unloading efficiency, unstable clamping, uneven force, and poor surface accuracy in the prior art.

[0010] According to a first aspect of the present invention, a vacuum adsorption wafer stage includes: a wafer stage substrate, the wafer stage substrate including a first stage surface and a second stage surface, the first stage surface being bonded to a wafer, and the second stage surface being bonded to a machine platform; a first annular adsorption region disposed on the first stage surface; a second annular adsorption region disposed on the first stage surface, wherein the diameter of the first annular adsorption region is larger than the diameter of the second annular adsorption region; a plurality of sensing units evenly distributed near the edge of the second stage surface of the wafer stage substrate; a plurality of temperature control units evenly distributed on the side surface of the wafer stage substrate, the sensing units being connected; a machine platform, wherein the second stage surface of the wafer stage substrate is bonded to the machine platform to form a sealed chamber; a first vacuum channel disposed on the machine platform and connected to the sealed chamber; a second vacuum channel disposed on the machine platform and connected to the first annular adsorption region; and a third vacuum channel disposed on the machine platform and connected to the second annular adsorption region; wherein the first annular adsorption region and the second annular adsorption region are both connected to air channels within the wafer stage substrate.

[0011] According to one embodiment of the present invention, a plurality of first vacuum holes are evenly distributed circumferentially within the first annular adsorption region; a first annular air channel is provided within the wafer substrate; wherein the first annular air channel is located within the projection region of the first annular adsorption region along a first direction and communicates with the first vacuum holes.

[0012] Specifically, this embodiment provides an implementation method for the first annular adsorption region.

[0013] According to one embodiment of the present invention, it further includes: a first air inlet, disposed on the second platform and communicating with the first annular air passage.

[0014] Specifically, this embodiment provides an implementation of a first air inlet.

[0015] According to one embodiment of the present invention, a plurality of second vacuum holes and a plurality of third vacuum holes are evenly distributed circumferentially within the second annular adsorption region, and the annular diameter formed by connecting the plurality of second vacuum holes is larger than the annular diameter formed by connecting the plurality of third vacuum holes; a second annular air channel and a third annular air channel are provided within the wafer abutment substrate; wherein the second annular air channel and the third annular air channel are both disposed within the projection region of the second annular adsorption region along a first direction, and the second annular air channel communicates with the second vacuum holes, and the third annular air channel communicates with the third vacuum holes.

[0016] Specifically, this embodiment provides an implementation method for the second annular adsorption region.

[0017] According to one embodiment of the present invention, it further includes: a second air inlet, disposed on the second platform; and a connecting air channel, disposed in the wafer platform substrate and connected to the second annular air channel and the third annular air channel respectively; wherein the second air inlet is connected to the connecting air channel.

[0018] Specifically, this embodiment provides an implementation of a second air inlet and a connecting air passage.

[0019] According to one embodiment of the present invention, it further includes: a cooling circulating water channel, which is coiled between the first annular air channel and the second annular air channel, and between the second annular air channel and the third annular air channel; wherein the cooling circulating water channel includes an inlet and an outlet, and the inlet and the outlet are disposed in the same circumferential area.

[0020] Specifically, this embodiment provides an implementation method for a cooling circulating water channel.

[0021] According to one embodiment of the present invention, the inlet and the outlet are arranged in the same radial direction.

[0022] Specifically, this embodiment provides an implementation method for an inlet and an outlet.

[0023] According to one embodiment of the present invention, it further includes: a first sealing ring disposed on the first platform, and its projection along the first direction surrounds the outside of the first annular adsorption area; and / or, a second sealing ring disposed on the second platform, and its projection along the first direction surrounds the outside of the first annular adsorption area, wherein at least a portion of the projection of the first vacuum pores in the first direction is located outside the second sealing ring.

[0024] Specifically, this embodiment provides an implementation of a first sealing ring and / or a second sealing ring.

[0025] According to one embodiment of the present invention, it further includes: a defoaming ring disposed on the first platform, wherein the diameter of the defoaming ring is larger than the diameter of the first annular adsorption region.

[0026] Specifically, this embodiment provides an implementation of a defoaming ring.

[0027] According to one embodiment of the present invention, it further includes: a first clearance hole and a second clearance hole, wherein the first clearance hole is disposed on the first table surface and the second clearance hole is disposed on the second table surface and corresponds to the first clearance hole; and / or, a plurality of first positioning holes and a plurality of second positioning holes, wherein the plurality of first positioning holes are disposed on the first table surface and the plurality of second positioning holes are disposed on the second table surface.

[0028] Specifically, this embodiment provides an implementation of a first clearance hole and a second clearance hole, as well as a first positioning hole and a second positioning hole.

[0029] A method for controlling the above-described vacuum adsorption wafer stage according to a second aspect of the present invention includes: Mount the wafer stage substrate onto the machine tool; The vacuum system is activated, and the sealed chamber between the second stage and the machine is evacuated through the first vacuum channel, thus fixing the wafer stage to the machine. After the robotic arm transfers the wafer to the first surface of the wafer stage, it forms an adsorption and fixation of the wafer in the first annular adsorption area through a second vacuum channel and a third vacuum channel in the second annular adsorption area.

[0030] According to one embodiment of the present invention, the adsorption and fixation of the wafer by the second vacuum channel in the first annular adsorption region and the third vacuum channel in the second annular adsorption region specifically includes: A negative pressure is formed at part of the second vacuum pores and the third vacuum pores in the second annular adsorption area through the third vacuum channel, thereby performing the first vacuum adsorption on the wafer. After the wafer is vacuum adsorbed in the third vacuum channel, it is vacuum adsorbed a second time in the first annular adsorption region through the second vacuum channel.

[0031] Specifically, this embodiment provides an implementation method in which the wafer is adsorbed and fixed by forming a first annular adsorption region and a second annular adsorption region through a second vacuum channel and a second vacuum channel.

[0032] According to one embodiment of the present invention, it further includes: During the wafer fabrication process, cooling water enters the wafer stage substrate through the water channel inlet and flows out through the water channel outlet to dissipate heat from the wafer. Multiple sensors continuously acquire temperature parameters of the wafer stage and determine control strategies for multiple temperature control units based on these parameters.

[0033] Specifically, this embodiment provides an implementation method for determining a control strategy for multiple temperature control units based on temperature parameters.

[0034] According to one embodiment of the present invention, the plurality of sensing units continuously acquire temperature parameters of the wafer stage, and determine a control strategy for the plurality of temperature control units based on the temperature parameters, specifically including: Based on the temperature parameters, temperature anomaly information of the wafer stage is obtained, and a first abnormal region and a second abnormal region of the wafer stage identified by the temperature anomaly information are determined. The first abnormal region is a temperature abnormal decrease region, and the second abnormal region is a temperature abnormal increase region. When the temperature anomaly information indicates that the local temperature of the wafer stage is lower than the temperature threshold, all temperature control units within the first abnormal area are determined based on the first abnormal area indicated by the temperature anomaly information, and the corresponding temperature control unit is activated to perform heating adjustment on the first abnormal area according to the temperature requirements of the wafer fabrication process. When the temperature anomaly information indicates that the local temperature of the wafer stage is higher than the temperature threshold, based on the second abnormal region indicated by the temperature anomaly information and the wafer fabrication process, all the temperature control units and corresponding cooling circulation channels within the second abnormal region are determined, the temperature control units are activated to perform cooling adjustment on the second abnormal region, and the cooling water flow rate in the cooling circulation channels is increased.

[0035] Specifically, this embodiment provides another implementation method for determining a control strategy for multiple temperature control units based on temperature parameters.

[0036] The above-mentioned one or more technical solutions of the present invention have at least one of the following technical effects: The vacuum adsorption wafer stage provided by the present invention achieves rapid adsorption, stable clamping and uniform force on the wafer by optimizing the adsorption structure and gas channel layout of the vacuum wafer stage, adapting to the rapid loading and unloading requirements in the wafer processing process, while ensuring the wafer surface accuracy.

[0037] Understandably, by employing a ring-shaped adsorption structure, this invention achieves rapid adsorption and degassing of wafers, adapting to the rapid loading and unloading requirements in wafer processing and improving production efficiency. It also ensures uniform force on the wafer surface, effectively avoiding warping and surface distortion caused by excessive local adsorption force, and ensuring the basic positioning accuracy of wafer processing.

[0038] Furthermore, by forming vacuum adsorption through independent air channels on the mating side of the wafer stage and the wafer, and between the wafer stage and the machine, the two are independent of each other, avoiding mutual interference of adsorption forces.

[0039] Furthermore, the present invention also provides a method for controlling a wafer stage. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of the assembly relationship between the wafer stage and the machine provided by the present invention, and the wafer adsorption.

[0042] Figure 2 This is a schematic diagram of the front structure of the vacuum adsorption wafer stage provided by the present invention.

[0043] Figure 3 This is one of the schematic diagrams of the internal structure of the wafer abutment substrate provided by the present invention.

[0044] Figure 4 This is a schematic diagram of the reverse side structure of the vacuum adsorption wafer stage provided by the present invention.

[0045] Figure 5 This is the second schematic diagram of the internal structure of the wafer stage substrate provided by the present invention.

[0046] Figure 6 This is a schematic diagram showing the arrangement of the sensing unit and the temperature control unit of the vacuum adsorption wafer stage provided by the present invention.

[0047] Figure 7 This is one of the flowcharts illustrating the control method for the vacuum adsorption wafer stage provided by the present invention.

[0048] Figure 8 This is the second flowchart illustrating the control method for the vacuum adsorption wafer stage provided by the present invention.

[0049] Figure label: 100. Wafer stage substrate; 110. First mesa; 111. First bump; 112. First clearance hole; 113. First positioning hole; 120. Second mesa; 121. Second bump; 122. First air inlet; 123. Second air inlet; 124. Second clearance hole; 125. Second positioning hole; 130. First annular adsorption area; 131. First vacuum hole; 132. Second vacuum hole; 133. Third vacuum hole; 140. Second annular adsorption area; 150. First annular air channel; 160. Second annular air channel; 170. Third annular air channel; 180. Connecting air channel; 190. Cooling circulation channel; 191. Water inlet; 192. Water outlet; 200. First sealing ring; 300. Second sealing ring; 400. Defoaming ring; 500. Sensor Department; 600. Temperature Control Department; 700. Machine tool; 710. First vacuum passage; 720. Second vacuum passage; 730. Cooling water inlet passage; 740. Cooling water outlet passage; 750. Third vacuum passage; 800, wafer; N: First direction. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0051] In the description of the embodiments of the present invention, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0052] In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly specified. In the description of the embodiments of this application, the term "and / or" is merely a description of the relationship between associated objects, indicating that three relationships can exist. For example, B1 and / or B2 can represent: B1 existing alone, B1 and B2 existing simultaneously, and B2 existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following associated objects have an "or" relationship. The following is combined Figures 1 to 8 The technical solution of the present invention will be described in detail below.

[0053] It should be noted that, Figures 1 to 6 If there are lines pointing to locations in the attached drawing with circles or arrows at the ends, it indicates that the current indication is a virtual component, such as a hole, slot, or plane.

[0054] In some specific embodiments of the present invention, such as Figures 1 to 6 As shown, this solution provides a vacuum adsorption wafer stage, including: a wafer stage substrate 100, the wafer stage substrate 100 including a first mesa 110 and a second mesa 120, the first mesa 110 being bonded to a wafer 800, and the second mesa 120 being bonded to a machine tool 700; a first annular adsorption region 130 disposed on the first mesa 110; a second annular adsorption region 140 disposed on the first mesa 110, and the diameter of the first annular adsorption region 130 being larger than the diameter of the second annular adsorption region 140; wherein, both the first annular adsorption region 130 and the second annular adsorption region 140 are connected to an air channel within the wafer stage substrate 100; and a plurality of sensing units 500 evenly distributed on the wafer stage substrate 100. The second platform 120 is located near the edge; multiple temperature control units 600 are evenly distributed on the side of the wafer stage substrate 100 and connected to the sensing unit 500; the machine platform 700 is formed by the second platform 120 of the wafer stage substrate 100 being attached to the machine platform 700; a first vacuum channel 710 is disposed on the machine platform 700 and connected to the sealed chamber; a second vacuum channel 720 is disposed on the machine platform 700 and connected to the first annular adsorption area 130; a third vacuum channel 750 is disposed on the machine platform 700 and connected to the second annular adsorption area 140; wherein, the first annular adsorption area 130 and the second annular adsorption area 140 are both connected to the air channels in the wafer stage substrate 100.

[0055] It should be noted that at least two annular adsorption areas are provided on the wafer stage substrate 100, so that the wafer 800 can be subjected to more uniform force and higher surface accuracy during clamping. Furthermore, the first annular adsorption area 130 and the second annular adsorption area 140 are both connected to the air channel in the wafer stage substrate 100, which can achieve independent adjustment of adsorption and improve the efficiency of wafer 800 loading and unloading.

[0056] In a possible embodiment, the first annular adsorption region 130 is located near the edge of the wafer stage substrate 100. During the wafer 800 mounting process, the second annular adsorption region 140 surrounds the wafer 800 contact surface to adsorb the wafer 800, thereby achieving rapid circumferential clamping of the wafer 800 and ensuring the initial adhesion between the wafer 800 and the substrate. The first annular adsorption region 130 is used to achieve uniform adsorption on the surface of the wafer 800 after the initial adhesion is achieved by the adsorption of the wafer 800 in the second annular adsorption region 140, thereby avoiding wafer 800 warping caused by uneven local force.

[0057] In a possible embodiment, the wafer stage substrate 100 is made of a hard material (such as microcrystalline glass or ceramic) with high modulus and low coefficient of thermal expansion to ensure the structural stability and positional accuracy of the substrate itself, and to provide a reliable foundation for the installation and processing of various components and flow channels.

[0058] Furthermore, this application adopts an annular adsorption air channel structure, which, compared to traditional full-area adsorption and point adsorption structures, offers a faster vacuum negative pressure response and a smoother ventilation and depressurization process, precisely adapting to the high-speed operation rhythm of the semiconductor automated machine 700. During the wafer 800 mounting process, the annular air channel can quickly establish a stable negative pressure, rapidly completing the wafer 800 bonding and fixing; during the wafer unmounting process, it can quickly depressurize and break the vacuum, efficiently completing the wafer 800 unloading, effectively shortening the operation time of wafer 800 mounting and unmounting, avoiding the problems of delayed negative pressure stabilization and depressurization in traditional structures, significantly improving the overall production efficiency of wafer 800 processing, and adapting to the needs of large-scale, automated semiconductor mass production.

[0059] Furthermore, the annular adsorption structure of this application can form a uniform, closed-loop negative pressure adsorption force around the edge of the wafer 800, completely changing the drawbacks of traditional local adsorption with concentrated and uneven force. The annular adsorption mode can uniformly wrap the force-bearing area of ​​the wafer 800, making the overall force of the wafer 800 balanced and eliminating the problem of local stress concentration. At the same time, the closed-loop negative pressure adsorption structure has a more uniform clamping force and stronger stability, which can effectively avoid problems such as positioning displacement, loosening, and warping during wafer 800 processing, greatly improving the stability and reliability of wafer clamping and fixing, and providing a stable operating foundation for various precision processing procedures.

[0060] Furthermore, this embodiment provides an implementation of the sensing unit 500 and the temperature control unit 600. By adopting a multi-point layout of the sensing unit 500 and the temperature control unit 600, real-time, accurate and uniform control of the surface temperature of the wafer stage is achieved, which greatly improves the temperature control accuracy and temperature uniformity, effectively solves the technical problem of local temperature deviation in the prior art, and provides a reliable guarantee for the ultra-high precision processing of the wafer 800 from the temperature dimension.

[0061] In a possible embodiment, the temperature control unit 600 includes an edge heating plate disposed on the side of the wafer stage substrate 100 and a center heating plate disposed on the wafer stage substrate 100, the center heating plate being disposed on the second stage surface 120.

[0062] In a possible embodiment, multiple sets of high-precision temperature sensors are installed in the water channel area of ​​the wafer stage substrate 100. The sensors are evenly distributed below and on the sides of the wafer 800 to achieve real-time, multi-point, and global monitoring of the wafer stage surface temperature. Multiple sets of electric heating modules linked to the temperature sensors are installed at the edge and bottom of the wafer stage. Both the temperature sensors and the electric heating modules are electrically connected to an external temperature control host. When the sensors detect that the local temperature is too low, the electric heating module in the corresponding area automatically starts to perform precise zoned temperature compensation. When the local temperature is detected to be too high, the temperature control host activates the cooling water circulation system to increase the cooling water flow in the corresponding area, achieving rapid heat dissipation and ensuring the uniformity and stability of the wafer stage surface temperature.

[0063] It should be noted that this invention achieves closed-loop precise temperature control by using multi-point global temperature monitoring, zoned electric heating compensation, and dynamic linkage adjustment of cooling water flow, thus ensuring temperature uniformity and realizing closed-loop temperature compensation.

[0064] It should be noted that the upper surface of the instrument 700 mates with the wafer stage, forming a sealed chamber between the wafer stage and the instrument 700. The sealed chamber is mainly formed by the second platform 120 of the frustum base, the upper surface of the instrument 700, and the second sealing ring 300. The instrument 700 is also provided with a first vacuum channel 710 connected to the sealed chamber to achieve the formation of a vacuum environment in the sealed chamber. The first vacuum channel 710 and the air channels connected to the first annular adsorption area 130 and the second annular adsorption area 140 on the wafer stage are set independently to avoid mutual interference of adsorption forces.

[0065] Furthermore, the internal gas inlet of the wafer stage substrate 100 is adapted to the vacuum system of the machine 700, and a quick-connect interface is set to improve the response speed of wafer loading and unloading on the wafer 800, and realize rapid adsorption and degassing.

[0066] Specifically, this embodiment provides an implementation of a second vacuum channel 720. The second vacuum channel 720 set on the machine 700 is directly connected to the first annular adsorption area 130 and the second annular adsorption area 140. The gas path connection is short and smooth, the vacuum transmission resistance is small, the negative pressure establishment and pressure relief response speed is fast, and the wafer loading and unloading efficiency of the 800 is effectively improved.

[0067] In some possible embodiments of the present invention, it further includes: a cooling water inlet channel 730, which is disposed on the machine 700 and connected to the inlet 191 of the cooling circulation channel 190 of the wafer stage; and a cooling water outlet channel 740, which is disposed on the machine 700 and connected to the outlet 192 of the cooling circulation channel 190 of the wafer stage.

[0068] Specifically, this embodiment provides an implementation of a cooling water inlet channel 730 and a cooling water outlet channel 740. The inlet and outlet channels built into the machine 700 are directly connected to the wafer stage cooling circulation channel 190, ensuring smooth water path connection, low water flow resistance, stable cooling water circulation, and continuous high-efficiency temperature control.

[0069] Furthermore, the water system is integrated inside the machine 700 with a neat and compact layout, eliminating the need for additional external piping, simplifying the overall structure, reducing assembly difficulty, and facilitating daily inspection and maintenance. At the same time, the water circulation system is independently deployed and does not interfere with the vacuum channel, which can stably remove the heat generated by the wafer stage operation, suppress temperature fluctuations, prevent the wafer 800 from deforming due to temperature rise, and ensure processing accuracy and process stability.

[0070] In a possible embodiment, the cooling water is ultrapure water.

[0071] In some possible embodiments of the present invention, it further includes: a plurality of first bumps 111, evenly distributed on a first platform 110, for bonding with a wafer 800; and a plurality of second bumps 121, evenly distributed on a second platform 120, for bonding with a machine tool 700.

[0072] Specifically, this embodiment provides an implementation of a first bump portion 111 and a second bump portion 121. By providing a plurality of first bump portions 111 on the first platform 110, the plurality of first bump portions 111 are used to bond with the wafer 800. The first bump portions 111 are precision ground and polished to ensure surface accuracy. At the same time, the bump structure can reduce the contact gap and contact area with the wafer 800, thereby reducing contact contamination.

[0073] Furthermore, the second platform 120 is the mating surface between the wafer stage and the machine tool 700. The second protrusion 121 facilitates the alignment and adjustment of the wafer stage and the machine tool 700, and can also cooperate with the second sealing ring 300 to form a sealed chamber, thereby realizing the vacuum adsorption and fixation of the wafer stage itself on the machine tool 700.

[0074] It should be noted that the first stage 110 is provided with evenly distributed first protrusions 111 that contact the wafer 800. The multi-point support reduces the contact area between the wafer 800 and the stage, reduces friction and adsorption stress on the contact surface, and makes the force on the wafer 800 more evenly distributed. This effectively avoids local pressure deformation of the wafer 800 and ensures the overall surface accuracy of the wafer 800. The second stage 120 is provided with evenly distributed second protrusions 121 that achieve multi-point contact with the machine tool 700. This optimizes the overall assembly stress state of the wafer stage, improves the stability and positioning reliability of the wafer stage on the machine tool 700, and reduces shaking and offset during operation. Both sets of protrusions are evenly distributed, and the support force is distributed in a regular and balanced manner. This not only improves the overall stability of wafer clamping and bearing, but also reduces the problems of vacuum decompression and airflow obstruction caused by large-area contact, and helps to improve the smoothness of wafer 800 loading and unloading operations.

[0075] In some possible embodiments of the present invention, a plurality of first vacuum holes 131 are evenly distributed circumferentially within the first annular adsorption region 130; a first annular air channel 150 is provided within the wafer stage substrate 100; wherein, the first annular air channel 150 is located within the projection area of ​​the first annular adsorption region 130 along the first direction N, and communicates with the first vacuum holes 131.

[0076] Specifically, this embodiment provides an implementation of a first annular adsorption region 130, in which a plurality of first vacuum holes 131 are provided to achieve adsorption of wafer 800 in the first annular adsorption region 130.

[0077] Furthermore, the first annular adsorption area 130 is circumferentially distributed with multiple first vacuum holes 131, which, together with the first annular air channels 150 set in the same projection area below and interconnected, can form a uniform annular negative pressure field. The negative pressure acts synchronously along the circumference of the wafer 800, and the wafer 800 is subjected to balanced force as a whole, effectively avoiding local stress concentration, preventing the wafer 800 from warping and deformation, and ensuring surface accuracy. The annular air channels and the annular adsorption area are arranged vertically and vertically, with short air paths and smooth airflow, and faster vacuum establishment and depressurization speeds, which can shorten the wafer 800 loading and unloading time, adapt to the high-speed operation requirements of automated production lines, and improve production efficiency.

[0078] It should be noted that the connection between the first annular air passage 150 and the first vacuum hole 131 can be understood as the first vacuum hole 131 being formed on the first platform 110 and connected to the first annular air passage 150 through other air passages, and the first annular air passage 150 being provided with corresponding air holes.

[0079] In some possible embodiments of the present invention, a first air inlet 122 is provided on the second platform 120 and communicates with the first annular air passage 150.

[0080] Specifically, this embodiment provides an implementation of a first air inlet 122. The first air inlet 122 is configured to connect with the first annular air passage 150, thereby forming a vacuum negative pressure adsorption in the first annular adsorption zone 130.

[0081] In some possible embodiments of the present invention, a plurality of second vacuum holes 132 and a plurality of third vacuum holes 133 are evenly distributed circumferentially within the second annular adsorption region 140, and the annular diameter formed by the connection of the plurality of second vacuum holes 132 is larger than the annular diameter formed by the connection of the plurality of third vacuum holes 133; a second annular air channel 160 and a third annular air channel 170 are provided within the wafer stage substrate 100; wherein, the second annular air channel 160 and the third annular air channel 170 are both located within the projection area of ​​the second annular adsorption region 140 along the first direction N, and the second annular air channel 160 is connected to the second vacuum holes 132, and the third annular air channel 170 is connected to the third vacuum holes 133.

[0082] Specifically, this embodiment provides an implementation of a second annular adsorption region 140. The second annular adsorption region 140 is provided with two sets of annular pores of different diameters, which are respectively connected to the independent second annular air channel 160 and the third annular air channel 170, forming an inner and outer double-layer annular negative pressure adsorption structure. The pressure can be controlled independently in different zones, and the adsorption force is clearly layered, further optimizing the force distribution of the wafer 800, completely avoiding the problem of local stress concentration, and effectively maintaining the surface accuracy of the wafer 800.

[0083] In some possible embodiments of the present invention, the invention further includes: a second air inlet 123 disposed on the second platform 120; and a connecting air passage 180 disposed within the wafer stage substrate 100 and connected to the second annular air passage 160 and the third annular air passage 170, respectively; wherein the second air inlet 123 is connected to the connecting air passage 180.

[0084] Specifically, this embodiment provides a second air inlet 123 and a connecting air passage 180. The second annular air passage 160 and the third annular air passage 170 are connected through the second air inlet 123 and the connecting air passage 180, so as to realize centralized air supply and unified pressure control of the dual-ring air passage, simplify the overall air passage layout, reduce the number of external pipes, and reduce structural complexity.

[0085] Furthermore, a single air intake can simultaneously provide negative pressure to two sets of annular vents, resulting in better synchronization of vacuum establishment and depressurization. The negative pressure output is balanced and stable, ensuring that the suction force of the inner and outer annular adsorption zones is coordinated and consistent, further optimizing the uniformity of force on the wafer 800.

[0086] In some possible embodiments of the present invention, it further includes: a cooling circulation channel 190, which is coiled between the first annular air passage 150 and the second annular air passage 160, and between the second annular air passage 160 and the third annular air passage 170; wherein the cooling circulation channel 190 includes an inlet 191 and an outlet 192, and the inlet 191 and the outlet 192 are disposed in the same circumferential area.

[0087] Specifically, this embodiment provides an implementation of a cooling circulation channel 190. By optimizing the cooling circulation channel 190 inside the vacuum wafer stage, the heat exchange area is increased and the heat exchange efficiency of the flow channel is improved. At the same time, combined with the temperature compensation design of the vacuum wafer stage, precise control of temperature changes during the process is achieved, thermal distortion is reduced, and the temperature uniformity of the wafer stage surface and the entire wafer 800 is ensured, thus guaranteeing the processing accuracy of the wafer 800 from the temperature dimension.

[0088] In a possible embodiment, the cooling circulation channel 190 adopts a serpentine layout, with the flow channel covering the entire projected area of ​​the wafer 800 mating surface to maximize the heat exchange area.

[0089] In a possible embodiment, the inlet 191 and outlet 192 of the cooling circulation channel 190 are symmetrically arranged, which can flexibly adjust the flow rate of cooling water according to the heat dissipation requirements of different processing processes, greatly improve the heat exchange efficiency, and can quickly and efficiently dissipate the heat generated during the wafer 800 processing, effectively reducing the thermal distortion rate of the wafer stage and wafer 800.

[0090] In a possible embodiment, the cooling circulation channel 190 is connected to an external ultrapure water cooling circulation system, continuously supplying ultrapure water for heat exchange to ensure the stability of heat dissipation. The walls of the air channel and the water channel are staggered to avoid heat conduction interference between them, ensuring the independence of adsorption and heat dissipation functions.

[0091] In a possible embodiment, in order to ensure the machining accuracy of the internal flow channels of the wafer stage substrate 100, the wafer stage substrate 100 can adopt a "separate machining of upper and lower parts + precision sealing" scheme to complete the machining of the flow channels. This manufacturing scheme first divides the wafer stage substrate 100 into an upper substrate and a lower substrate through precision milling or other processes, and machines the air channels, water channels and sealing grooves respectively. Then, the two substrates are sealed together to form a complete built-in flow channel structure.

[0092] In some possible embodiments of the present invention, the inlet 191 and the outlet 192 are arranged in the same radial direction.

[0093] Specifically, this embodiment provides an implementation of an inlet 191 and an outlet 192. The inlet 191 and the outlet 192 are located on the same circumference and in the same radial direction. The pipeline routing is regular and uniform, which simplifies the layout of external water circuits, reduces assembly difficulty, and facilitates pipeline layout, inspection and maintenance. The inlet and outlet 192 are concentrated in position, the water flow is smooth and the flow resistance is small, the cooling water circulation efficiency is high, the temperature control response is fast, and the wafer stage temperature can be maintained stably for a long time, effectively improving the overall operational stability of the semiconductor process.

[0094] In some possible embodiments of the present invention, it further includes: a first sealing ring 200 disposed on the first platform 110 and projected along the first direction N around the outside of the first annular adsorption area 130; and / or, a second sealing ring 300 disposed on the second platform 120 and projected along the first direction N around the outside of the first annular adsorption area 130.

[0095] Specifically, this embodiment provides an implementation of a first sealing ring 200 and / or a second sealing ring 300. The first sealing ring 200 is arranged around the outside of the first annular adsorption area 130, which can effectively seal the adsorption area, reduce the infiltration of external air, ensure the stability of the negative pressure in the annular adsorption area, improve the reliability of vacuum adsorption, and avoid the wafer clamping loosening due to air leakage.

[0096] In a possible embodiment, the second sealing ring 300 is arranged outside the second protrusion 121 of the second stage 120, which can enhance the sealing effect of the contact surface between the wafer stage and the machine 700, further block external airflow interference, and maintain constant internal pressure of the air passage.

[0097] In some possible embodiments of the present invention, it further includes: a defoaming ring 400 disposed on the first platform 110, wherein the diameter of the defoaming ring 400 is larger than the diameter of the first annular adsorption region 130.

[0098] Specifically, this embodiment provides an implementation of a debubbling ring 400. The debubbling ring 400 is disposed on the first mesa 110 and has a diameter larger than the first annular adsorption area 130. It can gradually remove the air between the wafer 800 and the mesa during the wafer 800 bonding process, effectively avoid bubble residue, and ensure the process stability of wafer processing.

[0099] In some possible embodiments of the present invention, it further includes: a first clearance hole 112 and a second clearance hole 124, wherein the first clearance hole 112 is disposed on the first platform 110 and the second clearance hole 124 is disposed on the second platform 120 and corresponds to the first clearance hole 112; and / or, a plurality of first positioning holes 113 and a plurality of second positioning holes 125, wherein the plurality of first positioning holes 113 are disposed on the first platform 110 and the plurality of second positioning holes 125 are disposed on the second platform 120.

[0100] Specifically, this embodiment provides a first clearance hole 112 and a second clearance hole 124, as well as a first positioning hole 113 and a second positioning hole 125. The first clearance hole 112 and the second clearance hole 124, which are arranged vertically, can avoid interference from external mechanisms, ejector pins and other components, reserve space for the wafer 800 to be loaded and unloaded, ensure smooth wafer loading and unloading process, and avoid damage to the wafer 800 and equipment from component collisions.

[0101] Furthermore, the first positioning hole 113 and the second positioning hole 125 are respectively arranged on the first platform 110 and the second platform 120, which can realize the precise alignment between the wafer 800, the wafer stage and the matching machine 700, improve the positioning accuracy during assembly and use, and prevent deviation.

[0102] In a possible embodiment, the first clearance hole 112 and the second clearance hole 124 are used to allow the E-Pin rod to pass.

[0103] Figure 7 and Figure 8 These are schematic diagrams of one and two of the control methods for the vacuum adsorption wafer stage provided by this invention, as shown in the following figures. Figures 1 to 8 As shown, the method includes the following: Install the wafer stage substrate 100 onto the machine 700; The vacuum system is activated, and the sealed chamber between the second stage 120 and the machine 700 is evacuated through the first vacuum channel 710, and the wafer stage is fixed on the machine 700. After the robotic arm transfers the wafer 800 to the first stage 110 of the wafer stage, it forms an adsorption and fixation of the wafer 800 in the first annular adsorption area 130 through the second vacuum channel 720 and the second annular adsorption area 140 through the third vacuum channel 750.

[0104] It should be noted that the process involves first evacuating the sealed chamber to lock and fix the wafer stage, and then evacuating the adsorption area to fix the wafer 800. The process is carried out step by step with a clear and orderly logic, which avoids the wafer stage from shifting during the operation and ensures the stability of the overall positioning reference.

[0105] In some possible embodiments of the present invention, the wafer 800 is adsorbed and fixed in the first annular adsorption region 130 by the second vacuum channel 720 and the second annular adsorption region 140 by the third vacuum channel 750, specifically including: The third vacuum channel 750 forms a negative pressure at the second vacuum hole 132 and the third vacuum hole 133 in the second annular adsorption region 140, thereby performing the first vacuum adsorption on the wafer 800. After the wafer 800 is vacuum adsorbed in the third vacuum channel 750, the wafer 800 is vacuum adsorbed a second time in the first annular adsorption region 130 through the second vacuum channel 720.

[0106] Specifically, this embodiment provides an implementation method for adsorbing and fixing the wafer 800 in the first annular adsorption region 130 and the second annular adsorption region 140 through the second vacuum channel 720 and the third vacuum channel 750. It adopts a two-stage stepwise vacuum adsorption. The second vacuum channel 750 first completes the initial adsorption, and then the second vacuum channel 720 achieves full adsorption. The negative pressure is gradually applied, which effectively avoids the warping and deformation of the wafer 800 caused by the instantaneous strong negative pressure impact, and ensures the surface accuracy of the wafer 800. The two vacuum channels are divided into different groups of air holes, and the air paths are clearly divided and do not interfere with each other. The order of negative pressure application is controllable, which can make the wafer 800 gradually and tightly adhere to the mesa, smoothly expel the gap air, reduce the residual air bubbles, and realize the independent control of the first vacuum hole 131, the second vacuum hole 132 and the third vacuum hole 133 to achieve the initial adhesion and adsorption of the wafer 800.

[0107] Furthermore, the graded adsorption method allows the force on the wafer 800 to gradually become balanced from local to overall, resulting in a smooth clamping transition, which greatly improves the reliability of adsorption and fixation and prevents the wafer 800 from shifting or misaligning.

[0108] In some possible embodiments of the present invention, it further includes: During the wafer 800 fabrication process, cooling water enters the wafer stage substrate 100 through the water channel inlet and flows out through the water channel outlet to dissipate heat from the wafer 800. Multiple sensors 500 continuously acquire temperature parameters of the wafer stage and determine control strategies for multiple temperature control units 600 based on these parameters.

[0109] Specifically, this embodiment provides an implementation method for determining the control strategy of multiple temperature control units 600 based on temperature parameters. The cooling water circulates and can remove the heat generated by the wafer 800 and the wafer stage operation in real time, so as to achieve continuous heat dissipation and temperature control, avoid local heat accumulation that could cause thermal deformation of the wafer 800, and ensure surface accuracy.

[0110] In some possible embodiments of the present invention, multiple sensing units 500 continuously acquire temperature parameters of the wafer stage, and determine control strategies for multiple temperature control units 600 based on the temperature parameters, specifically including: Based on temperature parameters, temperature anomaly information of the wafer stage is obtained, and the first and second anomaly regions of the wafer stage identified by the temperature anomaly information are determined. The first anomaly region is the temperature anomaly decrease region, and the second anomaly region is the temperature anomaly increase region. When the local temperature of the wafer stage marked by the temperature anomaly information is lower than the temperature threshold, based on the first abnormal area marked by the temperature anomaly information, all temperature control units 600 within the first abnormal area are identified, and according to the temperature requirements of the wafer 800 fabrication process, the corresponding temperature control unit 600 is activated to perform heating adjustment on the first abnormal area. When the local temperature of the wafer stage marked by the temperature anomaly information exceeds the temperature threshold, based on the second abnormal region marked by the temperature anomaly information and the wafer 800 fabrication process, all temperature control units 600 and corresponding cooling circulation channels 190 within the second abnormal region are identified. The temperature control units 600 are then activated to perform cooling regulation on the second abnormal region, and the cooling water flow rate in the cooling circulation channels 190 is increased.

[0111] Specifically, this embodiment provides another implementation method for determining the control strategy of multiple temperature control units 600 based on temperature parameters. This enables precise differentiation between low-temperature and high-temperature abnormal areas of the wafer stage, locating fault areas, providing data support for differentiated temperature control, and precisely controlling the temperature by zone and category. This achieves temperature balance across the entire wafer stage, eliminates wafer deformation and processing deviations caused by temperature differences, and ensures wafer surface accuracy and process consistency.

[0112] It should be noted that the temperature sensor 500 monitors the surface temperature of the wafer stage in real time, and combined with the precise zonal compensation of the temperature control unit 600 and the dynamic adjustment of the cooling water flow, the closed-loop precise temperature control is achieved, ensuring the temperature uniformity and stability of the wafer stage and wafer 800 throughout the entire wafer 800 processing. After the process is completed, the vacuum system is degassed, and the adsorption components are quickly de-adsorbed, enabling the wafer 800 to be quickly unloaded.

[0113] Furthermore, for the first abnormal area with low temperature, the corresponding temperature control unit 600 is activated to perform heating compensation, quickly restoring the temperature to the process standard range and avoiding the impact of low temperature on processing stability.

[0114] Furthermore, for the second abnormal area with excessively high temperature, the temperature control unit 600 is activated simultaneously to cool down the area and the cooling water flow is increased. This dual heat dissipation control results in rapid cooling response and significant temperature control effect, effectively suppressing local heat accumulation.

[0115] In some embodiments, the wafer stage substrate 100 is provided with a plurality of cooling circulation channels 190, each cooling circulation channel 190 being provided with an independent cooling water inlet and outlet, i.e., a plurality of independent inlets 191 and a plurality of outlets 192. By setting up a plurality of cooling circulation channels 190, the cooling water flow rate in the first abnormal region and the second abnormal region can be adjusted, thereby achieving temperature control of the first abnormal region and the second abnormal region.

[0116] In some embodiments, a cooling circulation channel 190 is provided inside the wafer stage substrate 100. In this case, multiple sensors 500 continuously obtain temperature parameters of the wafer stage. Based on the temperature parameters, they obtain temperature anomaly information of the wafer stage, determine whether the wafer stage temperature is too high or too low, and then adjust the temperature by adjusting the temperature of the cooling water entering the wafer stage substrate 100 and the temperature control unit 600.

[0117] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "method," "specific method," or "some methods," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or method is included in at least one embodiment or method of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or method. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or methods. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or methods described in this specification, as well as the features of different embodiments or methods.

[0118] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A vacuum adsorption wafer stage, characterized in that, include: A wafer stage substrate (100) includes a first mesa (110) and a second mesa (120), wherein the first mesa (110) is bonded to a wafer (800) and the second mesa (120) is bonded to a machine platform (700); The first annular adsorption area (130) is disposed on the first platform (110); The second annular adsorption region (140) is disposed on the first platform (110), and the diameter of the first annular adsorption region (130) is larger than the diameter of the second annular adsorption region (140). Multiple sensors (500) are evenly distributed on the second platform (120) near the edge; Multiple temperature control units (600) are evenly distributed on the side of the wafer stage substrate (100) and connected to the sensing unit (500); The machine tool (700) has a second platform (120) of the wafer stage substrate (100) attached to the machine tool (700) to form a sealed chamber; A first vacuum passage (710) is provided on the machine base (700) and connected to the sealed chamber; The second vacuum channel (720) is disposed on the machine (700) and connected to the first annular adsorption zone (130); The third vacuum channel (750) is disposed on the machine (700) and connected to the second annular adsorption zone (140); The first annular adsorption region (130) and the second annular adsorption region (140) are both connected to the gas channels in the wafer substrate (100).

2. The vacuum adsorption wafer stage according to claim 1, characterized in that, Multiple first vacuum pores (131) are evenly distributed along the circumference of the first annular adsorption region (130). The wafer stage substrate (100) is provided with a first annular gas channel (150). The first annular air passage (150) is disposed in the projection area of ​​the first annular adsorption area (130) along the first direction (N) and is connected to the first vacuum hole (131). It also includes: a first air inlet (122), which is disposed on the second platform (120) and communicates with the first annular air passage (150).

3. The vacuum adsorption wafer stage according to claim 2, characterized in that, The second annular adsorption region (140) is evenly distributed with a plurality of second vacuum pores (132) and a plurality of third vacuum pores (133) along the circumferential direction. The annular diameter formed by the connection of the plurality of second vacuum pores (132) is larger than the annular diameter formed by the connection of the plurality of third vacuum pores (133). The wafer stage substrate (100) is provided with a second annular air channel (160) and a third annular air channel (170). The second annular air passage (160) and the third annular air passage (170) are both located within the projection area of ​​the second annular adsorption region (140) along the first direction (N), and the second annular air passage (160) is connected to the second vacuum vent (132), and the third annular air passage (170) is connected to the third vacuum vent (133).

4. The vacuum adsorption wafer stage according to claim 3, characterized in that, Also includes: The second air inlet (123) is provided on the second table surface (120); A connecting gas channel (180) is disposed within the wafer stage substrate (100) and is connected to the second annular gas channel (160) and the third annular gas channel (170) respectively; The second air inlet (123) is connected to the connecting air passage (180).

5. A vacuum adsorption wafer stage according to claim 4, characterized in that, Also includes: A cooling circulation channel (190) is coiled and arranged between the first annular air passage (150) and the second annular air passage (160), and between the second annular air passage (160) and the third annular air passage (170); The cooling circulation channel (190) includes an inlet (191) and an outlet (192), which are located in the same circumferential area.

6. A vacuum adsorption wafer stage according to any one of claims 3 to 5, characterized in that, Also includes: A first sealing ring (200) is disposed on the first platform (110) and its projection along the first direction (N) surrounds the outside of the first annular adsorption area (130); And / or, a second sealing ring (300) is disposed on the second platform (120) and its projection along the first direction (N) surrounds the outside of the first annular adsorption area (130); And / or, a defoaming ring (400) is disposed on the first platform (110), and the diameter of the defoaming ring (400) is larger than the diameter of the first annular adsorption region (130).

7. A vacuum adsorption wafer stage according to any one of claims 1 to 5, characterized in that, Also includes: A first clearance hole (112) and a second clearance hole (124) are provided on the first platform (110) and the second clearance hole (124) is provided on the second platform (120) and corresponds to the first clearance hole (112). And / or, a plurality of first positioning holes (113) and a plurality of second positioning holes (125), wherein the plurality of first positioning holes (113) are disposed on the first table surface (110) and the plurality of second positioning holes (125) are disposed on the second table surface (120).

8. A method for controlling a vacuum adsorption wafer stage according to any one of claims 1 to 7, characterized in that, include: The wafer stage substrate (100) is mounted onto the machine (700); The vacuum system is activated, and the sealed chamber between the second stage (120) and the machine base (700) is evacuated through the first vacuum channel (710), and the wafer stage is fixed on the machine base (700). After the robotic arm transfers the wafer (800) to the first stage (110) of the wafer stage, it forms an adsorption and fixation of the wafer (800) in the first annular adsorption area (130) through the second vacuum channel (720) and the second annular adsorption area (140) through the third vacuum channel (750).

9. The method for controlling a vacuum adsorption wafer stage according to claim 8, characterized in that, The adsorption and fixation of the wafer (800) through the second vacuum channel (720) in the first annular adsorption region (130) and the third vacuum channel (750) in the second annular adsorption region (140) specifically includes: The third vacuum channel (750) creates a negative pressure at part of the second vacuum hole (132) and the third vacuum hole (133) in the second annular adsorption region (140), thereby performing the first vacuum adsorption on the wafer (800); After the wafer (800) is vacuum adsorbed in the third vacuum channel (750), the wafer (800) is vacuum adsorbed a second time in the first annular adsorption region (130) through the second vacuum channel (720).

10. A method for controlling a vacuum adsorption wafer stage according to claim 8 or 9, characterized in that, Also includes: During the wafer (800) fabrication process, cooling water enters the wafer stage substrate (100) from the water channel inlet and flows out from the water channel outlet to dissipate heat from the wafer (800); Multiple sensors (500) continuously acquire temperature parameters of the wafer stage, and based on the temperature parameters, acquire temperature anomaly information of the wafer stage, and determine a first abnormal region and a second abnormal region of the wafer stage identified by the temperature anomaly information, wherein the first abnormal region is a temperature abnormal decrease region and the second abnormal region is a temperature abnormal increase region. When the temperature anomaly information indicates that the local temperature of the wafer stage is lower than the temperature threshold, based on the first abnormal area indicated by the temperature anomaly information, all the temperature control units (600) within the first abnormal area are determined, and according to the temperature requirements of the wafer (800) fabrication process, the corresponding temperature control unit (600) is activated to perform heating adjustment on the first abnormal area. When the temperature anomaly information indicates that the local temperature of the wafer stage is higher than the temperature threshold, based on the second abnormal region indicated by the temperature anomaly information and the wafer (800) fabrication process, all the temperature control units (600) and the corresponding cooling circulation channels (190) within the second abnormal region are determined, the temperature control units (600) are activated to perform cooling regulation on the second abnormal region, and the cooling water flow rate in the cooling circulation channels (190) is increased.

Images