A 3-bit all-logic parallel operation terahertz superstructure device

Abstract

The present application relates to the technical field of terahertz wave modulation, and discloses a 3-bit full-logic parallel operation terahertz superstructure device, which comprises M*N superatoms arranged in a periodic array, wherein the superatom comprises a substrate, a silicon film, a first metal split-line resonator, a second metal split-line resonator, a first metal split-ring resonator, a second metal split-ring resonator, a third metal split-ring resonator and a fourth metal split-ring resonator; the present application can not only realize super-wideband parallel 3-bit basic logic operation, but also can provide a potential computing platform for multi-dimensional terahertz applications such as information encryption and large-capacity communication.

Description

Technical Field

[0001] This invention relates to the field of terahertz wave modulation technology, specifically to a terahertz meta-device with 3-bit fully parallel logic operation. Background Technology

[0002] With the accelerated advancement of digital transformation, the contradiction between real-time processing of massive amounts of data and the performance bottlenecks of traditional computing architectures is becoming increasingly prominent. However, traditional electronic computing architectures may still face physical limitations in speed and capacity for decades to come. In recent years, photonic systems have become a research hotspot due to their sub-nanosecond ultrafast response characteristics, multidimensional parallel processing capabilities, and low heat dissipation. As a key complement to electronic and photonic systems, the optoelectronic computing paradigm achieves heterogeneous integration and multidimensional parallel processing at the physical layer, demonstrating broad application prospects in diverse fields such as wireless communication encryption, holographic imaging, and adaptive computing.

[0003] As a core component of computing systems, the performance of logic devices plays a crucial role in enhancing the computing power of information processing platforms. To explore optimal optoelectronic synergy mechanisms, research on logic devices in the microwave and visible light bands has flourished in recent years. Various devices based on switching diodes, heterojunctions, graphene, and two-dimensional molybdenum disulfide have emerged. However, microwave logic devices are limited by wavelength-dependent physical size constraints and limited spectral resources, while visible light band devices are hampered by energy efficiency bottlenecks caused by material absorption losses. The terahertz (THz) band (0.1-10 THz), with its high transparency, sub-millimeter wavelength, and wide bandwidth, can achieve low-loss signal processing, which not only facilitates device miniaturization but also supports ultra-high capacity transmission. Simultaneously, the rapidly developing metasurface technology, through customized subwavelength structure arrays, enables the manipulation of electromagnetic responses using various resonant modes, such as Lorentz resonance (LR), electromagnetically induced transparency (EIT) resonance, and bound states in the continuous domain. These resonant modes can precisely control multidimensional information parameters, including amplitude, phase, polarization state, and frequency, thus providing more flexible control dimensions. Therefore, logic devices based on terahertz metasurfaces hold promise for building logic computing architectures that achieve high integration density and multifunctionality.

[0004] Meanwhile, thanks to advancements in dynamic materials such as phase change materials, two-dimensional materials, and photoactive materials, breakthroughs have been achieved in terahertz logic devices with real-time controllability and multifunctionality. Numerous studies have integrated multiple 2-bit basic logic units into these devices using hybrid excitation methods and tunable materials. However, functional expansion relies on the synergistic effects of multiple tunable materials or multi-physics fields, leading to an exponential increase in system complexity. In multidimensional data processing, the cascading of multiple 2-bit basic logic units inevitably introduces device complexity and signal crosstalk. Furthermore, most existing schemes have narrow operating bandwidths, limiting their potential in large-scale parallel processing, multifunctional integration compatibility, and functional robustness. Summary of the Invention

[0005] To address the aforementioned shortcomings in existing technologies, this invention provides a terahertz meta-device with 3-bit fully parallel logic operation, which solves the problems of high system complexity, device complexity and signal interference caused by multi-dimensional data processing, and low compatibility or functional stability of parallel processing and multi-functional integration in existing meta-devices.

[0006] To achieve the above-mentioned objectives, the technical solution adopted by this invention is as follows: A terahertz meta-device with 3-bit fully parallel logic operation includes: M×N superatoms arranged in a periodic array, each superatom comprising a substrate, a silicon thin film, a first metal split-line resonator, a second metal split-line resonator, a first metal split-ring resonator, a second metal split-ring resonator, a third metal split-ring resonator, and a fourth metal split-ring resonator. A silicon thin film is disposed on the upper surface of the substrate; The first and second metal split-ring resonators are centrally symmetrically arranged on the upper surface of the silicon thin film, and the third and fourth metal split-ring resonators are centrally symmetrically arranged on the upper surface of the silicon thin film. The first and second metal split-line resonators are arranged perpendicularly to each other on the upper surface of the silicon thin film. The first and second metal split-line resonators are distributed in the gap between the first, second, third, and fourth metal split-ring resonators. A split gap is provided at the symmetrical center point of the first and second metal split-line resonators. Metal protrusions are provided at both ends of the split gap of each metal split-line resonator. Splitting ports are provided on the sides of the first metal split-ring resonator and the second metal split-ring resonator facing the first metal split-line resonator, and splitting ports are provided on the sides of the third metal split-ring resonator and the fourth metal split-ring resonator facing the second metal split-line resonator.

[0007] The present invention has the following beneficial effects: The terahertz meta-device proposed in this invention is a compact, ultra-wideband, and wideband parallel terahertz logic device. It can not only realize a variety of 3-bit basic logic operations in ultra-wideband parallel mode, but also achieve an effective balance between complex data processing and miniaturization, scalability, and ease of operation. At the same time, it provides a highly promising computing platform for multi-dimensional terahertz applications such as information encryption and high-capacity communication. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the superatomic structure of a terahertz meta-device with 3-bit fully parallel logic operation proposed in this invention. Figure 2 This is a schematic diagram of the structure of a terahertz meta-device with 3-bit fully parallel logic operation proposed in this invention; Figure 3 This is a schematic diagram of the dynamic resonance spectral response under X-polarized wave incidence in the embodiment; Figure 4 This is a schematic diagram of the dynamic resonance spectral response under Y-polarized wave incidence in the embodiment; Figure 5 This is a schematic diagram illustrating the dynamic control of the total loss of mode I and mode II as the silicon conductivity increases (σ=0, 400, 1000, 1500 S / m) in the embodiment. Figure 6 This is a schematic diagram illustrating the dynamic control of the total loss of mode III and mode IV in the embodiment as the silicon conductivity increases (σ=0, 400, 1000, 1500 S / m). Figure 7 This is a schematic diagram of the static analysis of the multipole structure of the independent structure and the complete metallic structure of the III mode under X-polarized wave excitation (σ=0) in the example. Figure 8 This is a schematic diagram of the static analysis of the multipole structure of the IV mode under Y-polarized wave excitation (σ=0). Figure 9 In the examples, the III and IV modes ( and The far-field scattering intensity of ) and the complete metallic structure ( or A schematic diagram of dynamic comparative analysis; Figure 10 This is a schematic diagram showing the variation of the terahertz time-domain signal amplitude of the pure silicon film with optical pump flux and time in the embodiment. Figure 11 This is a schematic diagram of four logic input signals (000-011) generated in the 0.1-1.8THz frequency range under Y-polarized wave excitation in the polarization-pump-time modulation of the three-dimensional control architecture, as an example. Figure 12 This is a schematic diagram of four logic input signals (100-111) generated in the 0.1-1.8THz frequency range under X-polarized wave excitation in the polarization-pump-time modulation of the three-dimensional control architecture, as an example. Figure 13 This is the truth table of the 3-bit logic operation NAND in the embodiment, and its corresponding test and simulation diagram; Figure 14 This is the truth table of the 3-bit logical operation OR in the embodiment, and its corresponding test and simulation diagram; Figure 15 This is the truth table of the 3-bit logic operation NOR in the embodiment, and its corresponding test and simulation diagram; Figure 16 This is the truth table of the 3-bit logic operation XNOR in the embodiment, and its corresponding test and simulation diagram; Figure 17 This is the truth table of the 3-bit logic operation XOR in the embodiment, and its corresponding test and simulation diagram; Figure 18 This is a truth table of the 3-bit logical operation AND in the embodiment, and its corresponding test and simulation diagram. Detailed Implementation

[0009] The specific embodiments of the present invention are described below to enable those skilled in the art to understand the present invention. However, it should be understood that the present invention is not limited to the scope of the specific embodiments. For those skilled in the art, various changes are obvious as long as they are within the spirit and scope of the present invention as defined and determined by the appended claims. All inventions utilizing the concept of the present invention are protected.

[0010] like Figures 1-2 As shown, a terahertz meta-device with 3-bit fully parallel logic operation includes: M×N superatoms arranged in a periodic array, each superatom comprising a substrate, a silicon thin film, a first metal split-line resonator, a second metal split-line resonator, a first metal split-ring resonator, a second metal split-ring resonator, a third metal split-ring resonator, and a fourth metal split-ring resonator.

[0011] In this embodiment, M and N are both positive integers greater than 1. The substrate is selected as highly transparent sapphire, the silicon thin film is selected as silicon, and the first metal split-line resonator, second metal split-line resonator, first metal split-ring resonator, second metal split-ring resonator, third metal split-ring resonator, and fourth metal split-ring resonator are all selected as gold. The arrangement of the substrate, silicon thin film, first metal split-line resonator, second metal split-line resonator, first metal split-ring resonator, second metal split-ring resonator, third metal split-ring resonator, and fourth metal split-ring resonator is as follows: Figure 1 As shown, specifically: A silicon thin film is disposed on the upper surface of the substrate.

[0012] The first and second metal split-ring resonators are centrally symmetrically arranged on the upper surface of the silicon thin film, as are the third and fourth metal split-ring resonators.

[0013] The first and second metal split-line resonators are arranged perpendicularly to each other on the upper surface of the silicon thin film. The first and second metal split-line resonators are distributed in the gaps between the first, second, third, and fourth metal split-ring resonators. A split gap is provided at the symmetrical center point of the first and second metal split-line resonators. Metal protrusions are provided at both ends of the split gap of each metal split-line resonator.

[0014] Splitting ports are provided on the sides of the first metal split-ring resonator and the second metal split-ring resonator facing the first metal split-line resonator, and splitting ports are provided on the sides of the third metal split-ring resonator and the fourth metal split-ring resonator facing the second metal split-line resonator.

[0015] Specifically, both the first and second metal split-ring resonators are rectangular and the same size, with a hollow internal structure.

[0016] Specifically, the third and fourth metal split-ring resonators are both square and the same size, with a hollow internal structure.

[0017] Specifically, the splitting apertures of the first, second, third, and fourth metal split-ring resonators are the same.

[0018] Specifically, the metal protrusions at both ends of the split gap of each metal split-line resonator are of the same size.

[0019] In this embodiment, as Figure 1 As shown, the transverse periodicity of the superatoms is The longitudinal period is The side lengths of the third and fourth metal split-ring resonators, as well as the lateral side lengths of the first and second metal split-ring resonators, are all... The longitudinal side lengths of the first and second metal split-ring resonators are: The length of the metal bulge of the first metal split-line resonator to one end of the first metal split-line resonator near the edge of the superatom is... The length of the metal bulge of the second metal split-line resonator to one end of the second metal split-line resonator near the edge of the superatom is... The dimensions of the splitting apertures of the first, second, third, and fourth metal split-ring resonators are: Furthermore, the linewidths of the first metal split-line resonator, the second metal split-line resonator, the first metal split-ring resonator, the second metal split-ring resonator, the third metal split-ring resonator, and the fourth metal split-ring resonator are all... .

[0020] Therefore, the invention constructs as follows Figure 1 The superatom shown can realize various broadband parallel logic operations. This superatom is an anisotropic structure with multiple resonances exhibiting different bandwidth electromagnetic modulation characteristics, including Lorentz resonance (LR) and electromagnetically induced transparency (EIT) resonance. The selection of Lorentz resonance (LR) and EIT resonance stems from their excellent broadband spectral coverage capabilities, specifically as follows... Figure 3 As shown, under X-polarized wave excitation, the first metal wire resonator, together with the first and second metal split-ring resonators, excites two modes (mode I and mode II), which couple to produce electromagnetically induced transparent resonance; simultaneously, the third and fourth metal split-ring resonators generate a single mode (mode III), forming a broadband Lorentz resonance covering 1.0-1.8 THz; similarly, as Figure 4 As shown, under Y-polarized wave excitation, the second metal wire resonator activates mode IV, generating Lorentz resonance in the range of 0.5-1.0 THz.

[0021] In this embodiment, a special structure is adopted to achieve the dynamic modulation function: a 600 nm thick single-crystal silicon thin film is epitaxially grown on a 500 μm thick sapphire substrate and integrated below a patterned metal structure; when pump light with a wavelength of 800 nm and a photon energy of ~1.55 eV irradiates the meta-device constructed in this invention, valence band electrons in the silicon material are excited to the conduction band, and the number of charge carriers can reach a peak within a picosecond timescale. This characteristic determines the electromagnetic scattering characteristics of photoelectron resonance; it is worth mentioning that this photoexcitation intensity is directly related to the flux of the pump light.

[0022] Meanwhile, in the three-resonance mode dynamic modulation model (0.1-1.8 THz), this embodiment simulates the effect of carrier concentration by changing the conductivity of silicon, thereby reflecting its dynamic change process. In this process, because the material parameters directly affect the non-radiative losses of each mode in the system, the total loss composed of non-radiative losses and radiative losses is... It is also subject to dynamic regulation by the conductivity of silicon; such as Figure 5 and 6 As shown, with the increase of silicon conductivity (σ=0, 400, 1000, 1500S / m), the total loss of all modes is dynamically regulated.

[0023] Furthermore, to further verify the independence of the three resonances in the meta-device constructed in this invention during static and dynamic operation, the underlying physical mechanism was investigated. Specifically, the far-field scattering intensity, including contributions from electric dipoles (ED), magnetic dipoles (MD), electric quadrupoles (EQ), magnetic quadrupoles (MQ), and toroidal dipoles (TD), was analyzed using the multipole decomposition method. Therefore, the specific formula for calculating the multipole moment of each resonator in Cartesian coordinates is as follows:

[0024]

[0025]

[0026]

[0027]

[0028] in, Represents electric dipole moment, Represents magnetic dipole moment, Represents the toroidal dipole moment. Represents the electric quadrupole moment. Represents the magnetic quadrupole moment. , Representing position vector and current density, respectively. Represents the imaginary unit. Represents angular frequency. This represents the speed of light in a vacuum. , All of these represent directions, corresponding to the X, Y, and Z directions in the Cartesian coordinate system. , These represent the position vectors at... , Components in direction, , They represent the current density at... , Components in direction, , These represent the vector product and scalar product of the position vector and the current density, respectively. , The vector products of position vector and current density are respectively represented in... , Components in direction.

[0029] Then, based on the multipole moments of each resonator in the Cartesian coordinate system, the far-field scattering intensity of the multipole moments in the Cartesian coordinate system is calculated, and the formula is as follows:

[0030]

[0031]

[0032]

[0033]

[0034] in, This represents the scattering intensity corresponding to the electric dipole moment. This represents the scattering intensity corresponding to the magnetic dipole moment. This represents the scattering intensity corresponding to the ring dipole moment. This represents the scattering intensity corresponding to the electric quadrupole moment. This represents the scattering intensity corresponding to the magnetic quadrupole moment.

[0035] like Figures 7-8As shown, a static comparative analysis of the three resonances generated by the meta-device constructed in this invention was first performed. Under X-polarized wave excitation conditions (σ=0), multipole analysis of the III-mode structure and the complete metallic structure showed that electromagnetically induced transparent resonance (modes I-II) and Lorentz resonance (mode III) are dominated by ED in their respective frequency bands, and the non-overlapping spectra confirmed their independence. Similarly, under Y-polarized wave excitation conditions (σ=0), the Lorentz resonance (mode IV) also exhibits ED dominance and spectral isolation characteristics. During dynamic modulation, this embodiment also performed a quantitative dynamic comparative analysis of the far-field scattering intensity of ED that dominates each resonance mode. Figure 9 As shown, at the corresponding center frequency point ( THz and At THz, the far-field scattering intensity of the ED corresponding to the resonance generated by the independent structure of the III or IV mode is almost completely consistent with the scattering intensity of the complete metal structure; as the photoconductivity increases, the trend of change remains completely synchronized; at this time, the realization of this broadband multi-resonance mode dynamic modulation provides a solid physical basis for the meta-device constructed in this invention to have broadband parallel 3-bit logic function with multi-dimensional input and multi-functional output.

[0036] Therefore, this embodiment successfully constructed a polarization-coded channel (channel 1). Based on this, utilizing the ultrafast optical carrier relaxation characteristics of photoactive silicon under optical pumping, two additional dynamic modulation dimensions were developed to realize the 3-bit input of the terahertz meta-device, including an optical pump flux-coded channel (channel 2) and a time-domain coded channel (channel 3), specifically: First, a second channel is introduced for the optically driven logic meta-device; such as... Figure 10 As shown, the amplitude of the terahertz time-domain signal in the silicon film exhibits a significant dependence on the optical pump flux, which fully demonstrates its sensitivity to optical pump intensity. More importantly, the introduction of a third channel extends the computational architecture to a three-dimensional input. Based on this, the time-sensitive characteristics of carriers in the pure silicon thin film are further analyzed—this characteristic enables 3-bit logic operations without increasing system complexity. Specifically, the relaxation process of silicon material exhibits a clear two-stage characteristic: during the rising edge dynamic process, the modulation depth gradually increases with time and reaches its peak at the steady state. This result reveals a significant difference in modulation depth within the time domain, providing a physical basis for the selection of the third channel time node. Considering unavoidable experimental errors, based on the results, the 2 ps at the rising edge is defined as "TST", and the 8 ps at the steady state is defined as "SST".

[0037] Therefore, by combining polarization decoupling capability with the independent programmability of optical pump energy flux and time response in silicon thin films, 3-bit ultrafast optically driven logic devices supporting broadband parallel operation can be realized. The 3-bit encoding method systematically assigns the following parameters: X / Y polarization corresponds to "1" / "0", high / low pump flux (450 / 22 μJ / cm²) corresponds to "1" / "0", SST / TST (8 / 2 ps) corresponds to "1" / "0", and generates eight logic inputs (000-111) in the 0.1-1.8 THz frequency band; as shown... Figure 11 As shown, at the Y-polarized incident wave (“0”), different logic inputs produce significant spectral modulation characteristics; at logic input 000 (low optical pump flux and TST), the spectrum exhibits obvious Lorentz resonance; when converted to logic input 001 (low optical pump flux and SST), the Lorentz resonance in the spectral response is significantly attenuated because some photogenerated carriers are excited and stabilized; furthermore, at logic input 010 (high optical pump flux and TST), photogenerated carriers begin to be excited, suppressing the resonance phenomenon; however, since the carrier concentration is in the SST state, only a small number of carriers are excited, and its suppression effect is even slightly weaker than that of logic input 001; when logic input 011 (high optical pump flux and SST), a large number of photogenerated carriers in the silicon thin film are further released and reach a steady state, resulting in a significant decrease in broadband transmittance and the complete disappearance of all resonance modes; similarly, as Figure 12 As shown, under the action of X-polarized incident wave ("1"), its spectral response also exhibits a similar modulation phenomenon.

[0038] Based on Fourier transform analysis of the time-domain signal, eight logic inputs can achieve complete reconstruction of the 0.1-1.8 terahertz wide-spectrum response within a single measurement cycle, thereby decoupling the transmission amplitude across the entire frequency band. This function supports six independent 3-bit logic operations simultaneously on six different frequency bands by setting preset logic thresholds. In this embodiment, the input and output variables are defined as: polarization state (P), optical pump flux state (F), time state (T), and logic output state (A). To more intuitively demonstrate the relative changes of these eight logic inputs, each logic operation uses the transmission amplitude of the specified input state as the normalized threshold within its corresponding operating bandwidth. This threshold division method can be called the adaptive threshold method. Compared with the traditional fixed threshold method, this method can not only maintain relative amplitude differences over a wider operating frequency range to reduce the misclassification rate, but also independently evaluate the relative amplitude relationship within each operating bandwidth. This design effectively reduces the risk of misclassification caused by signal leakage or crosstalk between adjacent frequency bands, thereby significantly improving the reliability of system operation.

[0039] like Figures 13-15As shown, it represents the 3-bit logic operations of the ultrafast broadband parallel optical drive logic device in this embodiment: NAND, OR, and NOR, which includes the truth table of the 3-bit logic operations NAND, OR, and NOR and their corresponding test and simulation results.

[0040] Among them, the three basic logic operations, NAND, OR, and NOR, can be implemented for all eight logic inputs within the specified frequency band; for example... Figure 13 As shown, within the 0.1-0.54 THz range, the transmission amplitude under logic input 111 is significantly lower than that under all other logic inputs; this differentiated response assigns a logic output state of "0" to logic input 111, while the logic output state under the other logic inputs is "1", thus realizing the "NAND" logic operation; similarly, as Figure 14 As shown, within the range of 0.71-0.86 THz, the transmission amplitude of logic input 000 is lower than that of all other logic inputs, resulting in an output state of "0", while the logic output state of the other logic inputs is "1", conforming to the "OR" logic operation; as Figure 15 As shown, within the range of 1.09-1.78 THz, the transmission amplitude under logic input 000 is higher than that under all other logic inputs, making its output state "1", while the logic output state under the other logic inputs is "0", thus realizing the "NOR" logic operation.

[0041] like Figures 16-18 As shown, it represents the 3-bit logic operations of the ultrafast broadband parallel optical drive logic device in this embodiment: XNOR, XOR, and AND, which includes the truth table of the 3-bit logic operations XNOR, XOR, and AND and their corresponding test and simulation results.

[0042] The XNOR, XOR, and AND logic operations are implemented through combinations of logic formulas under specific input conditions: when F=0, the XNOR logic operation is triggered within the range of 0.61-0.64 THz, as shown below. Figure 16 As shown, the transmission amplitude corresponding to logic inputs 000 and 101 is significantly higher than that corresponding to 001 and 100. Therefore, the logic output state for inputs 001 / 100 is "0", while the logic output state for other inputs is "1", verifying the expected logic operation effect. Simultaneously, within the range of 0.84-0.93 THz, as... Figure 17 As shown, when P=1, the transmission amplitude of logic inputs 101 and 110 is significantly higher than that of logic inputs 100 and 111, making the logic output state of inputs 101 / 110 "1", while the logic output state of the other logic inputs is "0", thus realizing the "XOR" logic operation; similarly, as Figure 18As shown, within the range of 1.41-1.46 THz, when P=1, the transmission amplitude of logic input 111 is higher than that of other inputs. The logic output state of input 111 is "1", while the logic output state of the other logic inputs is "0", thus realizing the AND logic operation. It is worth noting that AND and NOR logic operations can be implemented simultaneously within the range of 1.41-1.46 THz, demonstrating the potential of this invention to improve frequency resource utilization in spectrum reuse. Therefore, this embodiment can implement all 3-bit basic logic operations in parallel within the range of 0.1-1.8 THz.

[0043] Therefore, based on the terahertz meta-device constructed in this invention, the amplitude of the terahertz wave is modulated by changing the resonant mode, thereby constructing a variety of broadband parallel 3-bit basic logic operation methods, namely, the ultra-wideband computing method based on the terahertz meta-device. This method can realize eight logic inputs by constructing a novel three-dimensional physical control mechanism. By comparing the transmission amplitude under eight logic inputs, various 3-bit basic logic operations can be executed in parallel in the ultra-wideband frequency band of 0.1-1.8 THz, with a bandwidth utilization rate of up to 179%. At the same time, with the help of a simple non-contact excitation method of optical pumping, all logic operations can be completed in as little as 8 ps. This provides a feasible solution to the inherent contradiction between computing speed, parallel processing capability and system complexity in traditional architectures.

[0044] In summary, the terahertz meta-device with 3-bit fully parallel logic proposed in this invention is a compact, ultra-wideband, and wideband parallel terahertz logic device. It can not only realize a variety of 3-bit basic logic operations in ultra-wideband parallel mode, but also achieve an effective balance between complex data processing and miniaturization, scalability, and ease of operation. At the same time, it provides a highly promising computing platform for multi-dimensional terahertz applications such as information encryption and high-capacity communication.

[0045] Specific embodiments have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this invention. Therefore, the content of this specification should not be construed as a limitation of this invention.

[0046] Those skilled in the art will recognize that the embodiments described herein are intended to help the reader understand the principles of the invention, and should be understood that the scope of protection of the invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical teachings disclosed in this invention without departing from the spirit of the invention, and these modifications and combinations are still within the scope of protection of this invention.

Claims

1. A terahertz meta-device with 3-bit fully parallel logic operation, characterized in that, include: M×N superatoms are arranged in a periodic array. The superatoms include a substrate, a silicon thin film, a first metal split-line resonator, a second metal split-line resonator, a first metal split-ring resonator, a second metal split-ring resonator, a third metal split-ring resonator, and a fourth metal split-ring resonator. A silicon thin film is disposed on the upper surface of the substrate; The first and second metal split-ring resonators are centrally symmetrically arranged on the upper surface of the silicon thin film, and the third and fourth metal split-ring resonators are centrally symmetrically arranged on the upper surface of the silicon thin film. The first and second metal split-line resonators are arranged perpendicularly to each other on the upper surface of the silicon thin film. The first and second metal split-line resonators are distributed in the gap between the first, second, third, and fourth metal split-ring resonators. A split gap is provided at the symmetrical center point of the first and second metal split-line resonators. Metal protrusions are provided at both ends of the split gap of each metal split-line resonator. Splitting ports are provided on the sides of the first metal split-ring resonator and the second metal split-ring resonator facing the first metal split-line resonator, and splitting ports are provided on the sides of the third metal split-ring resonator and the fourth metal split-ring resonator facing the second metal split-line resonator.

2. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 1, characterized in that, Both the first and second metal split-ring resonators are rectangular and the same size, with a hollow internal structure.

3. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 1, characterized in that, The third and fourth metal split-ring resonators are both square and the same size, with a hollow internal structure.

4. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 1, characterized in that, The first, second, third, and fourth metal split-ring resonators have the same splitting aperture size.

5. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 1, characterized in that, The metal protrusions at both ends of the split gap of each metal split-line resonator are of the same size.

6. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 1, characterized in that, The silicon thin film uses gold.

7. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 1, characterized in that, The first metal split-line resonator, the second metal split-line resonator, the first metal split-ring resonator, the second metal split-ring resonator, the third metal split-ring resonator, and the fourth metal split-ring resonator are all made of gold.

8. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 1, characterized in that, The formula for calculating the multipole moment of each resonator in Cartesian coordinates is as follows: in, Represents electric dipole moment, Represents magnetic dipole moment, Represents the toroidal dipole moment. Represents the electric quadrupole moment. Represents the magnetic quadrupole moment. , Representing position vector and current density, respectively. Represents the imaginary unit. Represents angular frequency. This represents the speed of light in a vacuum. , All of these represent directions, corresponding to the X, Y, and Z directions in the Cartesian coordinate system. , These represent the position vectors at... , Components in direction, , They represent the current density at... , Components in direction, , These represent the vector product and scalar product of the position vector and the current density, respectively. , The vector products of position vector and current density are respectively represented in... , Components in direction.

9. The terahertz meta-device with 3-bit fully parallel logic operation according to claim 8, characterized in that, The formula for calculating the scattering intensity of the multipole moment in Cartesian coordinates is: in, This represents the scattering intensity corresponding to the electric dipole moment. This represents the scattering intensity corresponding to the magnetic dipole moment. This represents the scattering intensity corresponding to the ring dipole moment. This represents the scattering intensity corresponding to the electric quadrupole moment. This represents the scattering intensity corresponding to the magnetic quadrupole moment.

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