A display device and a method of manufacturing the same

Abstract

The application discloses a display device and a preparation method thereof, and belongs to the technical field of display, which comprises a substrate layer, a passivation layer and an anode layer which are sequentially stacked on the substrate layer, the anode layer has a plurality of microcavity structures; a signal identification layer is located between two adjacent microcavity structures, and the side edge of the signal identification layer is overlapped with part of the side wall of the microcavity structure; and a flat layer is arranged on the upper surface of the signal identification layer, and the lower end surface of the flat layer penetrates the signal identification layer and the anode layer and is connected with the passivation layer. The display device in the application uses the signal identification layer to complete the separation between adjacent pixel units, provides a support structure, realizes the function of a pixel definition layer, avoids the process of using the pixel definition layer to control the undercut depth and angle in the conventional process, omits the pixel definition layer in the structure, forms a large-angle pixel light-emitting area on the microcavity structure, and greatly improves the display effect under the condition of ensuring low crosstalk between pixels.

Description

Technical Field

[0001] This invention belongs to the field of display technology, specifically relating to a display device and its manufacturing method. Background Technology

[0002] OLED (Organic Light Emitting Diode) is an organic thin-film electroluminescent device. It has the advantages of simple manufacturing process, low cost, high luminous efficiency and easy formation of flexible structure, and has become an important display technology today.

[0003] To improve OLED display performance, current OLED designs typically utilize the microcavity effect to enhance light emission. This is achieved by employing microcavity structures in each sub-pixel module of the display panel. While inorganic materials are generally suitable for forming microcavity structures on display panels, they cannot provide the anode potential required for OLED light emission. To ensure illumination, connections are usually established on the sides of the microcavity structure using perforations and ITO (indium tin oxide) bonding. However, perforations and ITO bonding reduce pixel aperture ratio, restrict pixel shape design, easily worsen viewing angle color shift, and exacerbate IR drop (voltage drop) as pixel size increases. Summary of the Invention

[0004] In view of one or more of the above-mentioned defects or improvement needs of the prior art, the present invention provides a display device to solve the problems of reduced pixel aperture ratio and limited pixel shape design caused by the inorganic layer structure in the existing display panel.

[0005] To achieve the above objectives, the present invention provides a display device comprising: A substrate layer, on which a passivation layer and an anode layer are stacked sequentially, the anode layer having multiple microcavity structures; the microcavity structures include protrusions and sidewalls; A signal recognition layer is located between two adjacent microcavity structures, and the side of the signal recognition layer overlaps a portion of the sidewall of the microcavity structure. A planarization layer is disposed on the upper surface of the signal recognition layer and between two adjacent microcavity structures. The lower end face of the planarization layer penetrates the signal recognition layer and the anode layer and is connected to the passivation layer.

[0006] As a further improvement of the present invention, the signal recognition layer overlaps the sidewall of the microcavity structure at a height lower than the height of the upper end surface of the flat layer, and the upper end surface and part of the sidewall of the microcavity structure together constitute the pixel light-emitting area.

[0007] As a further improvement of the present invention, the signal recognition layer is made of one of silicon nitride, titanium oxide, tungsten or molybdenum.

[0008] As a further improvement of the present invention, the microcavity structure is a transparent conductive inorganic microcavity structure.

[0009] As a further improvement of the present invention, the microcavity structure includes: A first indium tin oxide layer is disposed on the passivation layer; Multiple inorganic layers are disposed on the upper surface of the first indium tin oxide layer; A second indium tin oxide layer is deposited on the surface of each of the inorganic layers, the second indium tin oxide layer covers the surface of each of the inorganic layers, and the second indium tin oxide layer is connected to the first indium tin oxide layer.

[0010] As a further improvement of the present invention, it also includes a light-emitting layer, which includes a plurality of red light-emitting layers, a plurality of blue light-emitting layers and a plurality of green light-emitting layers. The red light-emitting layers, the blue light-emitting layers and the green light-emitting layers are respectively disposed in one-to-one correspondence with each of the inorganic layers, and the thickness of the red light-emitting layers, the blue light-emitting layers and the green light-emitting layers is different from that of the inorganic layers.

[0011] As a further improvement of the present invention, the light-emitting layer covers the upper surfaces of the anode layer, the planarization layer and the signal recognition layer.

[0012] The present invention also includes a method for manufacturing a display device, comprising the following steps: S1. Obtain the substrate layer, and deposit a passivation layer, an anode layer, and a signal recognition layer sequentially on the substrate layer; S2. Etch the anode layer and the signal recognition layer to give the anode layer a plurality of spaced microcavity structures; the microcavity structures include protrusions and sidewalls, and gaps are formed between adjacent microcavity structures, the gaps penetrating the signal recognition layer and the anode layer; S3. Deposit a planarization layer on the upper surface of the signal recognition layer within the gap and between adjacent microcavity structures; S4. Etch the signal recognition layer to form a preset gap chamfer on the signal recognition layer.

[0013] As a further improvement of the present invention, in step S1, depositing an anode layer on the substrate layer includes: A first indium tin oxide layer is prepared on the side of the passivation layer away from the substrate layer; An inorganic layer is prepared at intervals on the side of the first indium tin oxide layer away from the passivation layer, such that the thickness of the inorganic layer in different color pixel regions is different. A second indium tin oxide layer is prepared on the upper surface of the inorganic layer and the first indium tin oxide layer.

[0014] As a further improvement of the present invention, in step S2, the anode layer and the signal recognition layer are etched, including: The first indium tin oxide layer and the second indium tin oxide layer located between two adjacent inorganic layers are etched to obtain the gap that penetrates the first indium tin oxide layer and the second indium tin oxide layer; the microcavity structure includes the first indium tin oxide layer, the inorganic layer and the second indium tin oxide layer.

[0015] As a further improvement of the present invention, in step S3, a planarization layer is prepared on the upper surface of the signal recognition layer within the gap and between adjacent microcavity structures, including: A planarization layer is deposited on the substrate obtained in step S2; The planarization layer is etched to expose the signal recognition layer located at the protrusions and part of the sidewalls of the microcavity structure, and the lower end face of the planarization layer penetrates the signal recognition layer, the anode layer and connects to the passivation layer.

[0016] As a further improvement of the present invention, the preparation method also includes: S5. A light-emitting layer is prepared on the substrate obtained in step S4, and the light-emitting layer is broken at the chamfer formed by the signal recognition layer and the planarization layer.

[0017] As a further improvement of the present invention, the preset gap chamfer on the signal recognition layer in step S4 is controlled by controlling the anode profile and etching time.

[0018] The aforementioned improved technical features can be combined with each other as long as they do not conflict with each other.

[0019] In summary, the beneficial effects of the above-described technical solutions conceived by this invention compared with the prior art include: (1) The display device of the present invention adds a signal recognition layer between the planarization layer and the anode layer. The signal recognition layer is used as a puncture point to control the etching time and degree of the planarization layer. The signal recognition layer covers the surface of the anode layer so that the etching of the planarization layer will not affect the surface of the anode layer and will not affect the morphological characteristics of the anode layer. This allows the planarization layer to be directly etched to the set morphology without the need for an additional undercut process. At the same time, the signal recognition layer can directly form a preset gap chamfer between the signal recognition layer and the planarization layer by selecting a set etching gas and controlling the etching time, so as to reduce the degree of crosstalk between pixels and improve the display effect. In addition, the signal recognition layer separates adjacent pixel units and provides a support structure, which can replace the pixel definition layer. This avoids the process of using the pixel definition layer to control the undercut depth and angle in conventional processes. The pixel definition layer is omitted in the overall structure, simplifying the overall structure and manufacturing process of the display device. Furthermore, based on the etching settings of the signal recognition layer, the signal recognition layer can be etched to the sidewall of the microcavity structure to form a large-angle pixel light-emitting area on the microcavity structure. This significantly improves the display effect while ensuring low crosstalk between pixels.

[0020] (2) The method for fabricating the display device of the present invention deposits a signal recognition layer on the surface of the anode layer. When the anode layer and the signal recognition layer are etched apart, the signal recognition layer covers the surface of the anode layer, avoiding the influence of the etching process on the microcavity structure and ensuring that the morphology of the microcavity structure is not affected. At the same time, when the planarization layer is deposited and etched, the signal recognition layer can avoid the influence of etching on the anode layer, and can indicate the etching of the planarization layer by recognizing the signal recognition layer during the etching process, so as to obtain a planarization layer with set morphological characteristics, avoiding the need to modify the planarization layer by the undercut process in the future, omitting the pixel definition layer, and simplifying the fabrication process of the display device. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the overall structure of the display device in an embodiment of the present invention; Figure 2 This is a schematic diagram of the S1 fabrication structure in the fabrication method of the display device according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the S1 fabrication structure in the fabrication method of the display device according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the S2 fabrication structure in the fabrication method of the display device according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of the S3 deposition planarization layer in the fabrication method of the display device according to an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of the S3 etching planarization layer in the fabrication method of the display device according to an embodiment of the present invention; Figure 7This is a schematic diagram of the fabrication structure in step S4 of the fabrication method of the display device in this embodiment of the invention; Figure 8 This is a schematic diagram of the fabrication structure in step S5 of the fabrication method of the display device according to an embodiment of the present invention; Figure 9 This is a schematic flowchart of the manufacturing method of the display device according to an embodiment of the present invention.

[0022] In all the accompanying drawings, the same reference numerals denote the same technical features, specifically: 1. Substrate layer; 2. Passivation layer; 3. First indium tin oxide layer; 4. Inorganic layer; 5. Second indium tin oxide layer; 6. Signal recognition layer; 7. Planarization layer; 8. Light-emitting layer. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0024] In the description of this invention, it should be understood that, unless otherwise stated, the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0025] Furthermore, unless otherwise stated, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0026] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0027] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0028] Example: Please see Figure 1 The display device in a preferred embodiment of the present invention includes a substrate layer 1, on which a passivation layer 2 and an anode layer are stacked sequentially, and the anode layer has a plurality of microcavity structures; wherein the microcavity structure includes protrusions and sidewalls; a signal recognition layer 6, which is located between two adjacent microcavity structures, and the side of the signal recognition layer 6 overlaps with part of the sidewall of the microcavity structure; and a planarization layer 7, which is disposed on the upper surface of the signal recognition layer 6, between two adjacent microcavity structures, and the lower end face of the planarization layer 7 penetrates the signal recognition layer 6 and the anode layer and is connected to the passivation layer 2.

[0029] The display device of this invention adds a signal recognition layer 6 between the planarization layer 7 and the anode layer. The signal recognition layer 6 acts as a puncture point to control the etching time and extent of the planarization layer 7. The signal recognition layer 6 covers the surface of the anode layer, ensuring that the etching of the planarization layer 7 does not affect the surface of the anode layer or its morphological characteristics. This allows the planarization layer 7 to be directly etched to the desired morphology without the need for additional undercutting. Simultaneously, the signal recognition layer 6 can directly form a preset gap chamfer between the signal recognition layer and the planarization layer by selecting a specific etching gas and controlling the etching time, thereby reducing inter-pixel crosstalk. This improves the display effect. In addition, the signal recognition layer 6 separates adjacent pixel units and provides a support structure. It can replace the pixel definition layer and avoid the process of using the pixel definition layer to control the undercut depth and angle in conventional processes. The pixel definition layer is omitted in the overall structure, simplifying the overall structure and manufacturing process of the display device. Furthermore, based on the etching settings of the signal recognition layer 6, the signal recognition layer 6 can be etched to the sidewall of the microcavity structure to form a large-angle pixel light-emitting area on the microcavity structure. This significantly improves the display effect while ensuring low crosstalk between pixels.

[0030] Optionally, a passivation layer 2 is further provided between the substrate layer 1 and the anode layer, and the lower end of the planarization layer 7 is connected to the passivation layer 2. The passivation layer 2 can saturate dangling bond defects on the surface of the anode layer, reduce carrier traps, and improve the stability of the electrode.

[0031] Furthermore, as an optional embodiment of the present invention, the signal recognition layer 6 overlaps at a height lower than the upper surface of the planarization layer 7 at the sidewall of the microcavity structure. The upper surface of the microcavity structure and part of the sidewall together constitute the pixel light-emitting area. In this invention, the signal recognition layer 6 is located between the planarization layer 7 and the microcavity structure. After the planarization layer 7 is directly etched to a predetermined topology, the upper surface and sidewalls of the microcavity structure can be exposed by controlling the etching of the signal recognition layer 6. It is only necessary to ensure that the signal recognition layer 6 overlaps with the sidewall of the microcavity structure, thereby significantly increasing the pixel light-emitting area while reducing crosstalk between adjacent pixels.

[0032] Further, as an optional embodiment of the present invention, the signal recognition layer 6 is fabricated using one of silicon nitride, titanium oxide, tungsten, or molybdenum. Here, the signal recognition layer 6 is used to distinguish it from the anode layer to indicate the etching of the planarization layer 7; simultaneously, the signal recognition layer 6 can achieve a side-shielding effect to reduce optical crosstalk between pixel units. Optionally, when the signal recognition layer 6 is fabricated using silicon nitride, it mainly serves to separate the sides of the anode layer from the planarization layer 7, facilitating the etching of the planarization layer 7 to obtain the desired morphology. When the signal recognition layer 6 is fabricated using titanium oxide, tungsten, or molybdenum, in addition to guiding the etching of the planarization layer 7, it can also form a light-shielding structure on the sides of the microcavity structure, reducing optical crosstalk between adjacent pixel units. Furthermore, when different materials are used for the signal recognition layer 6, corresponding etching gases must be selected to specifically etch the signal recognition layer 6 without damaging the anode layer and the planarization layer 7, thereby obtaining the signal recognition layer 6 with the desired morphological characteristics.

[0033] Furthermore, as an optional embodiment of the present invention, the microcavity structure in the present invention is a transparent conductive inorganic microcavity structure. When the microcavity structure is an inorganic microcavity structure, an inorganic transparent material is embedded in the anode layer.

[0034] Further, as an optional embodiment of the present invention, the microcavity structure of the present invention includes a first indium tin oxide (ITO) layer 3 disposed on a passivation layer 2; an inorganic layer 4 disposed on the upper surface of the first ITO layer 3; and a second ITO layer 5 deposited on the surface of the inorganic layer 4, covering the surface of the inorganic layer 4, and connected to the first ITO layer 3 through gaps between the inorganic layers 4. In the present invention, the anode layer is formed by directly depositing the second ITO layer 5 on the inorganic layer 4, which avoids the conventional method of overlapping ITO structures on the surface of the inorganic layer 4, ensuring a good connection between the first ITO layer 3 and the second ITO layer 5, avoiding conventional drilling methods, and solving problems such as low pixel aperture ratio and restrictions on pixel shape design caused by overlapping processes.

[0035] Furthermore, as an optional embodiment of the present invention, the display device further includes a light-emitting layer 8, which comprises multiple red light-emitting layers, multiple blue light-emitting layers, and multiple green light-emitting layers. Each red, blue, and green light-emitting layer corresponds one-to-one with each inorganic layer 4, and the thickness of the corresponding inorganic layer 4 varies among the red, blue, and green light-emitting layers. Different colored light-emitting layers emit light at different wavelengths, requiring corresponding optical resonance effects to enhance specific wavelengths and suppress other wavelengths. Therefore, different colored light-emitting layers 8 need to be matched with inorganic layers 4 of different thicknesses to precisely control the emitted color. Adjusting the thickness of the inorganic layer 4 for different structural morphologies of the light-emitting layer 8 is a conventional design in the art, and the specific thickness parameters of the light-emitting layer 8 and the inorganic layer 4 will not be elaborated here.

[0036] Furthermore, as an optional embodiment of the present invention, the microcavity structure in the present invention is a metal oxide microcavity structure. When the microcavity structure is a metal oxide microcavity structure, the metal oxide embedded in the microcavity structure can be one of titanium dioxide, tantalum pentoxide, zirconium oxide, and zinc oxide.

[0037] As an optional embodiment of the present invention, the inorganic layer 4 is prepared using silicon nitride and / or silicon oxide compounds. The inorganic layer 4 is used to construct an optical resonant structure and to control the emission color. The silicon oxide compounds include silicon oxide, silicon monoxide, silicon dioxide, and silicon trioxide, all of which are commonly used inorganic dielectric materials suitable for preparing microcavity structures, and will not be described in detail here.

[0038] Optionally, the substrate 1 is a silicon-based structure.

[0039] As an optional embodiment of the present invention, the light-emitting layer 8 covers the upper surface of the anode layer, the planarization layer 7 and the signal recognition layer 6.

[0040] It is worth noting that the pixel unit in this invention refers to the light-emitting unit composed of an anode, a light-emitting layer 8, a microcavity structure, and a cathode.

[0041] As an optional embodiment of the present invention, an encapsulation layer is also provided on the side of the light-emitting layer 8 away from the anode layer. The encapsulation layer is used to isolate the above-mentioned light-emitting unit structure from the outside, so as to avoid the influence of water, oxygen and other substances in the environment on the devices in the display device.

[0042] Furthermore, as an optional embodiment of the present invention, the display device in the present invention is not limited to a single-layer OLED display device, but can also be a dual-layer OLED display device or a multi-layer OLED display device. When the display device is a dual-layer or multi-layer OLED display device, the stacking structure of the single-layer OLED display device in this application can be adjusted according to the structure of the dual-layer or multi-layer OLED display device.

[0043] Furthermore, the present invention also includes a method for manufacturing a display device, which comprises the following steps: S1. Obtain the substrate layer 1, and sequentially deposit the passivation layer 2, the anode layer, and the signal recognition layer 6 on the substrate layer 1; the resulting structure is as follows. Figure 3 As shown; S2. Etch the anode layer and signal recognition layer 6 to create multiple spaced microcavity structures in the anode layer. Each microcavity structure includes protrusions and sidewalls, with gaps forming between adjacent microcavity structures, penetrating both the signal recognition layer 6 and the anode layer. The resulting structure is as follows: Figure 4 As shown; S3. A planarization layer 7 is deposited on the upper surface of the signal recognition layer 6 within the gap and between adjacent microcavity structures; the resulting structure is as follows: Figure 6 As shown; S4. Etch the signal recognition layer 6 to form a preset gap chamfer on the signal recognition layer 6; the resulting structure is as follows. Figure 7 As shown.

[0044] The method for fabricating a display device in this invention involves depositing a signal recognition layer 6 on the surface of the anode layer. When the anode layer and the signal recognition layer 6 are etched apart, the signal recognition layer 6 remains on the surface of the anode layer, avoiding the influence of the etching process on the microcavity structure and ensuring that the morphology of the microcavity structure is not affected. Simultaneously, when the planarization layer 7 is deposited and etched, the signal recognition layer 6 avoids the influence of etching on the anode layer. Furthermore, by recognizing the signal recognition layer 6 during the etching process, the etching of the planarization layer 7 can be indicated, resulting in a planarization layer 7 with defined morphological characteristics. This avoids the need for subsequent modification of the planarization layer 7 using an undercut process, omits the pixel definition layer, and simplifies the fabrication process of the display device.

[0045] Further, as an optional embodiment of the present invention, step S1, depositing an anode layer on the substrate layer 1, includes: A first indium tin oxide layer 3 is prepared on the side of the passivation layer 2 away from the substrate layer 1; An inorganic layer 4 is prepared at intervals on the side of the first indium tin oxide layer 3 away from the passivation layer 2, such that the thickness of the inorganic layer 4 located in different color pixel regions is different; the structural schematic diagram obtained in this step is shown below. Figure 2 As shown; A second indium tin oxide layer 5 is prepared on the upper surface of the inorganic layer 4 and the first indium tin oxide layer 3.

[0046] The present invention uses a deposition method to directly form a second indium tin oxide layer 5 on the inorganic layer 4 to complete the connection of indium tin oxide around the inorganic layer 4. The second indium tin oxide deposition method avoids the problems of low pixel aperture ratio and limited pixel shape design caused by conventional drilling and overlapping structures.

[0047] Furthermore, as an optional embodiment of the present invention, in step S2, etching the anode layer and the signal recognition layer 6 includes: The first indium tin oxide layer 3 and the second indium tin oxide layer 5 located between two adjacent inorganic layers 4 are etched to obtain a gap that penetrates the first indium tin oxide layer 3 and the second indium tin oxide layer 5; the microcavity structure includes the first indium tin oxide layer 3, the inorganic layer 4 and the second indium tin oxide layer 5.

[0048] Further, in step S3, a planarization layer 7 is prepared on the upper surface of the signal recognition layer 6 within the gap and between adjacent microcavity structures, including: A planarization layer is deposited on the substrate obtained in step S2; the resulting structure is as follows Figure 5 As shown; The planarization layer 7 is etched to expose the signal recognition layer 6 located at the protrusions and part of the sidewalls of the microcavity structure, and the lower end face of the planarization layer 7 penetrates the signal recognition layer 6, the anode layer, and connects with the passivation layer 2; the resulting structure is as follows. Figure 6 As shown.

[0049] Furthermore, the method for manufacturing the display device in this invention also includes: S5. A light-emitting layer is fabricated on the substrate obtained in step S4, and the light-emitting layer is broken at the chamfer formed by the signal recognition layer and the planarization layer, resulting in the structure shown below. Figure 8 As shown. Here, "substrate" refers to a structure having a base layer, a passivation layer, an anode layer, a signal recognition layer, and a planarization layer.

[0050] Furthermore, as an optional embodiment of the present invention, the preset gap chamfer on the signal recognition layer 6 in step S4 is controlled by controlling the anode profile and etching time. The signal recognition layer 6 is etched using a specific etching gas selected according to the material, and a signal recognition layer 6 with a set morphology is obtained without affecting the anode layer and the planarization layer 7, thus omitting the subsequent undercutting process.

[0051] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A display device, characterized in that, include: A substrate layer, on which a passivation layer and an anode layer are stacked sequentially, the anode layer having multiple microcavity structures; the microcavity structures include protrusions and sidewalls; A signal recognition layer is located between two adjacent microcavity structures, and the side of the signal recognition layer overlaps a portion of the sidewall of the microcavity structure. A planarization layer is disposed on the upper surface of the signal recognition layer and between two adjacent microcavity structures. The lower end face of the planarization layer penetrates the signal recognition layer and the anode layer and is connected to the passivation layer.

2. The display device according to claim 1, characterized in that, The signal recognition layer overlaps the sidewall of the microcavity structure at a height lower than the height of the upper surface of the flat layer. The upper surface and part of the sidewall of the microcavity structure together constitute the pixel light-emitting area.

3. The display device according to claim 1, characterized in that, The signal recognition layer is made of one of silicon nitride, titanium oxide, tungsten, or molybdenum.

4. The display device according to any one of claims 1-3, characterized in that, The microcavity structure is a transparent, conductive, inorganic microcavity structure.

5. The display device according to claim 4, characterized in that, The microcavity structure includes: A first indium tin oxide layer is disposed on the passivation layer; An inorganic layer is disposed on the upper surface of the first indium tin oxide layer; A second indium tin oxide layer is deposited on the surface of each of the inorganic layers, the second indium tin oxide layer covers the surface of each of the inorganic layers, and the second indium tin oxide layer is connected to the first indium tin oxide layer.

6. The display device according to claim 5, characterized in that, It also includes a light-emitting layer, which includes multiple red light-emitting layers, multiple blue light-emitting layers and multiple green light-emitting layers. The red light-emitting layers, the blue light-emitting layers and the green light-emitting layers are respectively disposed in one-to-one correspondence with each of the inorganic layers, and the thickness of the red light-emitting layers, the blue light-emitting layers and the green light-emitting layers is different from that of the inorganic layers.

7. The display device according to claim 6, characterized in that, The light-emitting layer covers the upper surfaces of the anode layer, the planarization layer, and the signal recognition layer.

8. A method for manufacturing a display device, characterized in that, Includes the following steps: S1. Obtain the substrate layer, and deposit a passivation layer, an anode layer, and a signal recognition layer sequentially on the substrate layer; S2. Etch the anode layer and the signal recognition layer to give the anode layer a plurality of spaced microcavity structures; the microcavity structures include protrusions and sidewalls, and gaps are formed between adjacent microcavity structures, the gaps penetrating the signal recognition layer and the anode layer; S3. A planarization layer is prepared on the upper surface of the signal recognition layer within the gap and between adjacent microcavity structures; S4. Etch the signal recognition layer to form a preset gap chamfer on the signal recognition layer.

9. The method for manufacturing a display device according to claim 8, characterized in that, In step S1, an anode layer is deposited on the substrate layer, including: A first indium tin oxide layer is prepared on the side of the passivation layer away from the substrate layer; An inorganic layer is prepared at intervals on the side of the first indium tin oxide layer away from the passivation layer, such that the thickness of the inorganic layer in different color pixel regions is different. A second indium tin oxide layer is prepared on the upper surface of the inorganic layer and the first indium tin oxide layer.

10. The method for manufacturing a display device according to claim 9, characterized in that, In step S2, the anode layer and the signal recognition layer are etched, including: The first indium tin oxide layer and the second indium tin oxide layer located between two adjacent inorganic layers are etched to obtain the gap that penetrates the first indium tin oxide layer and the second indium tin oxide layer; the microcavity structure includes the first indium tin oxide layer, the inorganic layer and the second indium tin oxide layer.

11. The method for manufacturing a display device according to claim 8, characterized in that, In step S3, a planarization layer is prepared on the upper surface of the signal recognition layer within the gap and between adjacent microcavity structures, including: A planarization layer is deposited on the substrate obtained in step S2; The planarization layer is etched to expose the signal recognition layer located at the protrusions and part of the sidewalls of the microcavity structure, and the lower end face of the planarization layer penetrates the signal recognition layer, the anode layer and connects to the passivation layer.

12. The method for manufacturing a display device according to claim 8, characterized in that, The preparation method also includes: S5. A light-emitting layer is prepared on the substrate obtained in step S4, and the light-emitting layer is broken at the chamfer formed by the signal recognition layer and the planarization layer.

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