Miniaturized low-loss isolation ring assembly applied to X-band broadband
By adopting an embedded microstrip isolated loop assembly design in the X-band frequency multiplication isolation loop assembly, combined with thin-film sputtering circuit and rotary magnetite substrate, the problem of large size and difficult integration is solved, and miniaturization, large broadband and low Lossed isolated loop assembly improves productivity and device power resistance and reliability.
Patent Information
- Application Number
- CN202420185176.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-25
- Publication Date
- 2024-12-20
- Estimated Expiration
- 2034-01-25
AI Technical Summary
The existing X-band frequency doubling isolation ring components are large in size and are not easy to integrate, making it difficult to achieve the needs of miniaturization, large broadband and low loss.
The embedded microstrip isolation ring assembly is adopted, including the lower magnetic circuit, rotary magnetite substrate, film sputtering circuit, dielectric and permanent magnet. It is connected through thin-film lithography technology and welding, and the dual Y circuit structure and outer conductor film layer are set. A resonant cavity is formed to achieve signal transmission.
It realizes simple structure, light weight and easy assembly, improves production efficiency, reduces device height and loss, expands bandwidth, enhances device power resistance and reliability, and achieves miniaturization and ultra-wideband low loss.
Smart Images

Figure CN222214440U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of isolation ring components, in particular to a broadband miniaturized low-loss isolation ring component applied to an X-band. Background Art
[0002] Microwave ferrite isolation circulator is an important high-frequency device, which has been widely used in microwave communication. Its main application is in the radio frequency transceiver system, which mainly uses the gyromagnetic material to produce gyromagnetic properties under the combined action of the external microwave magnetic field and the constant DC magnetic field, so that the electromagnetic waves propagating in the gyromagnet rotate in polarization, thereby realizing the unidirectional transmission of high-frequency signal energy; at the same time, by utilizing the non-reciprocity of the transmission of its port, it can be used as a duplex transceiver application to connect the antenna and the transceiver link, that is, through the function of the isolation circulator, the transceiver and the transceiver can be realized with only one pair of antennas. With the rapid development of microwave communication technology, a large number of radio frequency circuits are developing in the direction of miniaturization, wide bandwidth and low loss.
[0003] The utility model is mainly used to improve the antenna transmission and reception sharing, inter-stage isolation, and optimize system matching on the basis of realizing miniaturization, wide bandwidth, and low loss. Summary of the invention
[0004] The utility model aims to provide a novel microstrip isolation ring component with the advantages of wide bandwidth, miniaturization and low loss, in order to solve the technical problems that an X-band frequency doubling isolation ring component adopts an embedded strip line method, is large in size and difficult to integrate.
[0005] In order to achieve the above-mentioned invention object, the present invention provides the following technical solutions:
[0006] A broadband miniaturized low-loss isolation ring assembly for use in the X-band comprises a lower magnetic circuit, a gyromagnetic ferrite substrate, a thin film sputtering circuit, a first medium, a first permanent magnet, a second permanent magnet, a second medium and a resistor;
[0007] The gyromagnetic ferrite substrate is sputtered with a thin film sputtering circuit by thin film photolithography technology, the lower magnetic circuit is connected to the gyromagnetic ferrite substrate by welding, the first medium and the second medium are respectively bonded to the gyromagnetic ferrite, and the first permanent magnet, the second permanent magnet and the medium are connected by bonding;
[0008] The lower magnetic circuit is made of pure iron material, with a coating layer on the surface, and is L-shaped and arranged at a right angle;
[0009] The lower magnetic circuit and the gyromagnetic ferrite substrate are connected by welding, and the polished surface of the gyromagnetic ferrite substrate is provided with double Y-section circuit input and output by sputtering, and the gyromagnetic ferrite substrate is used as the center and the other double Y-section circuit input and output are provided in a mirror image;
[0010] The thin film sputtering circuit includes an extended port, an interconnect inductor, a core circuit integration, a distributed capacitor array, and a buffer junction capacitor;
[0011] The thin film sputtering circuit adopts a double Y circuit structure and is symmetrically arranged. The single small Y is for the transmission of microwave signals. The microwave signal input and output terminals, the microwave signal output terminal, and the microwave signal interconnection port are arranged at an angle of 120 degrees, and symmetrical section LC circuits are respectively arranged on the left and right sides of the lower part of the interconnection inductor;
[0012] The single-section large Y is an LC circuit of a distributed capacitance array, which is evenly set at an angle of 120 degrees. The double Y-section circuit is mirrored and expanded with the lower edge connection of the section LC circuit as the point, and a common port and an extended port are set. The extended port is connected to a resistor;
[0013] The surface layer and bottom layer of the thin film sputtering circuit are respectively provided with an outer conductor thin film layer and an inner conductor thin film layer, and a resonant cavity is formed based on the Faraday effect and ferromagnetic resonance effect of the gyromagnetic ferrite substrate and the first permanent magnet and the second permanent magnet.
[0014] Compared with the prior art, the beneficial effects of the utility model are:
[0015] 1. The utility model is applied to an X-band broadband miniaturized low-loss isolation ring assembly, including a lower magnetic circuit, a gyromagnetic ferrite substrate, a thin film sputtering circuit, a dielectric and a permanent magnet and a resistor; it has a simple structure, light weight, easy assembly, and improved production efficiency;
[0016] 2. The utility model is applied to the X-band broadband miniaturized low-loss isolation ring assembly. The lower magnetic circuit is made of a pure iron material, a coating layer is arranged on the surface, and an L-shaped right-angle arrangement is arranged. The right-angle port can be placed with a resistor or other absorbing material, which can increase the power resistance and reliability of the device;
[0017] 3. The utility model is applied to the X-band broadband miniaturized low-loss isolation ring component. The gyromagnetic ferrite substrate is made of composite powder sintered at high temperature to form a round rod-shaped ferrite hair. After cutting, grinding and polishing, a 0.2-0.6mm gyromagnetic ferrite substrate is finally formed, which can effectively reduce the overall height of the device and make the device miniaturized.
[0018] 4. The utility model is applied to the X-band broadband miniaturized low-loss isolation ring assembly. The outer conductor film layer and the inner conductor film layer are respectively arranged on the surface and bottom of the thin film sputtering circuit. Based on the Faraday effect and ferromagnetic resonance effect of the gyromagnetic ferrite substrate and the permanent magnet, a resonant cavity is formed, which can effectively obtain the transmission of signals, reduce losses, and make the device tend to be miniaturized.
[0019] 5. The utility model is applied to the X-band broadband miniaturized low-loss isolation ring assembly. The thin film sputtering circuit adopts a double Y circuit structure symmetrically arranged. The single small Y is for the transmission of microwave signals. The microwave signal input and output ends, microwave signal output ends, and microwave signal interconnection ports are arranged at an angle of 120 degrees. Symmetrical section LC circuits are arranged on the left and right sides of the lower part of the interconnection inductor. Such a design can reduce the size of the device and effectively improve the bandwidth and miniaturization requirements of the device.
[0020] 6. The utility model is a thin film sputtering circuit, which is sputtered on a spin magnetic ferrite substrate by thin film photolithography technology. The sputtered thin film circuit adopts a double Y circuit structure. The large Y is a multi-stage impedance matching LC circuit. The secondary impedance matching is a straight line, which is a section of trapezoidal strip line. The sizes of the third, fourth and fifth level impedance matching are getting smaller and smaller, which can achieve ultra-wideband and low loss of isolated ring components. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 This is a schematic diagram of the structure of the utility model applied to the X-band broadband miniaturized low-loss isolation ring assembly;
[0022] Figure 2 It is a schematic diagram of the structure explosion of the utility model applied to the X-band broadband miniaturized low-loss isolation ring assembly;
[0023] Figure 3 The utility model is a schematic diagram of a thin film sputtering circuit applied to an X-band broadband miniaturized low-loss isolation ring component.
[0024] Explanation of the serial numbers in the figure: 1. Lower magnetic circuit; 2. Square gyromagnetic ferrite substrate; 3. Thin film sputtering circuit; 4. First medium; 5. First permanent magnet; 6. Second permanent magnet; 7. Second medium; 8. Resistance; 3-1. Extension port; 3-2. Mutual inductance; 3-3. Core circuit integration; 3-4. Distributed capacitor array; 3-5. Buffer nodule capacitor. DETAILED DESCRIPTION
[0025] The following is a further description in conjunction with the accompanying drawings and specific implementations.
[0026] The technical solution of the present utility model will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present utility model, rather than all of the embodiments.
[0027] The components of the embodiments of the present invention generally described and shown in the drawings herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention.
[0028] Based on the embodiments of the present utility model, all other embodiments obtained by ordinary technicians in the field without making any creative work shall fall within the scope of protection of the present utility model.
[0029] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
[0030] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0031] Figure 1-Figure 3 As shown: a broadband miniaturized low-loss isolation ring component used in the X-band, including a lower magnetic circuit 1, a square gyromagnetic ferrite substrate 2, a thin film sputtering circuit 3, a first medium 4, a first permanent magnet 5, a second permanent magnet 6, a second medium 7, an electric 8, an extension port 3-1, an interconnect inductor 3-2, a core circuit integration 3-3, a distributed capacitor array 3-4, and a buffer nodule capacitor 3-5.
[0032] The circuit is sputtered on the gyromagnetic ferrite substrate by thin film lithography technology, the lower magnetic circuit and the gyromagnetic ferrite substrate are welded and connected, the medium and the gyromagnetic ferrite are bonded and connected, and the permanent magnet and the medium are connected by bonding. There are fewer parts and the process is simple, which ensures the stability and firmness of the structure and is conducive to enhancing the reliability of the device.
[0033] The lower magnetic circuit is made of a pure iron material, a coating layer is arranged on the surface, and an L-shaped right-angle arrangement is provided. A resistor or other wave-absorbing material can be placed at the right-angle port, which can increase the power resistance of the device.
[0034] The spin-magnetic ferrite substrate 2 adopts a square spin-magnetic ferrite substrate; the circuit is sputtered on the spin-magnetic ferrite substrate by thin film photolithography technology, and the thin film sputtering circuit 3 adopts a double Y circuit structure symmetrically arranged, the single small Y is for the transmission of microwave signals, and the microwave signal input and output ends, the microwave signal output end, and the microwave signal interconnection port are arranged at an angle of 120 degrees, and symmetrical section LC circuits are arranged on the left and right sides of the lower part of the interconnection inductor, and the corresponding nodule distribution is adjusted according to the requirements of technical specifications; the single large Y is an LC circuit of a distributed capacitance array, which is evenly arranged at an angle of 120 degrees, and the double Y section circuit is mirrored and expanded with the lower edge connection of the section LC circuit as the point, and a common port and an extension port are arranged, and the extension port is connected to a resistor or other electronic components.
[0035] The surface layer and bottom layer of the thin film sputtering circuit are respectively provided with an outer conductor thin film layer and an inner conductor thin film layer, and a resonant cavity is formed based on the Faraday effect and ferromagnetic resonance effect of the gyromagnetic ferrite substrate and the permanent magnet, which can effectively obtain signal transmission, reduce loss, and make the device tend to be miniaturized.
[0036] The gyromagnetic ferrite substrate is formed by high-temperature sintering of composite powder to form a round rod-shaped ferrite bristle, which is then cut, ground and polished to finally form a 0.2-0.6 mm gyromagnetic ferrite substrate.
[0037] The lower magnetic circuit and the gyromagnetic ferrite substrate are connected by welding, and the double Y-section circuit input and output are arranged on the polished surface of the gyromagnetic ferrite substrate by sputtering, and the remaining double Y-section circuit input and output are arranged in a mirror image with the gyromagnetic ferrite substrate as the center.
[0038] The lower magnetic circuit of the utility model is made of pure iron material and is welded with a square gyromagnetic ferrite substrate to increase the tensile and bending strength of the gyromagnetic ferrite and form a magnetization circuit with a permanent magnet, so that the magnetization of the isolation circulator is more uniform.
[0039] The utility model is applied to an X-band broadband miniaturized low-loss isolation annular component, comprising a lower magnetic circuit, a gyromagnetic ferrite substrate, a thin film sputtering circuit, a dielectric and a permanent magnet and a resistor; the utility model has the advantages of simple structure, light weight, easy assembly and improved production efficiency.
[0040] The utility model is applied to an X-band broadband miniaturized low-loss isolation ring component. The lower magnetic circuit adopts a pure iron material, a coating layer is arranged on the surface, and an L-shaped right-angle arrangement is provided. A resistor or other absorbing material can be placed at the right-angle port, which can increase the power resistance and reliability of the device.
[0041] The utility model is applied to the X-band broadband miniaturized low-loss isolation ring component. The gyromagnetic ferrite substrate is made of composite powder sintered at high temperature to form a round rod-shaped ferrite hair core. After cutting, grinding and polishing, a 0.2-0.6mm gyromagnetic ferrite substrate is finally formed, which can effectively reduce the overall height of the device and make the device miniaturized.
[0042] The utility model is applied to the X-band broadband miniaturized low-loss isolation ring component. The outer conductor film layer and the inner conductor film layer are respectively arranged on the surface and bottom layers of the thin film sputtering circuit. Based on the Faraday effect and ferromagnetic resonance effect of the gyromagnetic ferrite substrate and the permanent magnet, a resonant cavity is formed, which can effectively obtain the transmission of signals, reduce losses, and make the device tend to be miniaturized.
[0043] The utility model is applied to an X-band broadband miniaturized low-loss isolation ring component. The thin film sputtering circuit adopts a double Y circuit structure symmetrically arranged. The single-section small Y is for the transmission of microwave signals. The microwave signal input and output ends, the microwave signal output end, and the microwave signal interconnection port are arranged at an angle of 120 degrees. Symmetrical section LC circuits are respectively arranged on the left and right sides of the lower part of the interconnection inductor. Such a design can reduce the size of the device and can effectively improve the requirements of the device bandwidth and miniaturization.
[0044] The utility model discloses a thin film sputtering circuit, which is sputtered on a spin magnet ferrite substrate by thin film photolithography technology. The sputtered thin film circuit adopts a double Y circuit structure. The large Y is a multi-stage impedance matching LC circuit. The secondary impedance matching is a straight line, which is a section of a ladder strip line. The sizes of the third, fourth and fifth impedance matching are getting smaller and smaller, which can realize ultra-wideband and low loss of the isolation ring component.
[0045] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace part or all of the technical structures therein with equivalents. These modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the utility model.
Claims
1. Applied to X-band broadband miniaturized low-loss isolation ring components, characterized by: It includes lower magnetic circuit (1), gyromagnetic A ferrite substrate (2), a thin film sputtering circuit (3), a first medium (4), a first permanent magnet (5), a second permanent magnet (6), a second medium (7), and a resistor (8); The gyromagnetic ferrite substrate (2) is sputtered with a thin film sputtering circuit (3) by thin film photolithography technology, the lower magnetic circuit (1) and the gyromagnetic ferrite substrate (2) are welded and connected, the first medium (4) and the second medium (7) are respectively bonded and connected to the gyromagnetic ferrite, and the first permanent magnet (5), the second permanent magnet (6) and the medium are connected by bonding; The lower magnetic circuit (1) is made of pure iron material, with a coating layer provided on the surface, and is arranged at a right angle in an L-shape; The lower magnetic circuit (1) and the gyromagnetic ferrite substrate (2) are connected by welding, and the double Y-section circuit input and output are arranged on the polished surface of the gyromagnetic ferrite substrate by sputtering, and the other double Y-section circuit input and output are arranged in a mirror image with the gyromagnetic ferrite substrate as the center; The thin film sputtering circuit (3) comprises an extended port (3-1), an interconnect inductor (3-2), a core circuit integration (3-3), a distributed capacitor array (3-4), and a buffer nodule capacitor (3-5); The thin film sputtering circuit (3) is symmetrically arranged with a double Y circuit structure, a single small Y is used for the transmission of microwave signals, a microwave signal input and output end, a microwave signal output end, and a microwave signal interconnection port are arranged at an angle of 120 degrees, and symmetrical section LC circuits are respectively arranged on the left and right sides of the lower part of the interconnection inductor (3-2); A single-section large Y is an LC circuit with a distributed capacitance array, which is evenly arranged at an angle of 120 degrees. A double-Y section circuit is mirror-arranged and expanded with the lower edge connection of the section LC circuit as a point, and a common port and an extended port (3-1) are set. The extended port (3-1) is connected to a resistor (8); The thin film sputtering circuit (3) has an outer conductor thin film layer and an inner conductor thin film layer on the surface and bottom respectively, and forms a resonant cavity based on the Faraday effect and ferromagnetic resonance effect of the gyromagnetic ferrite substrate (2) and the first permanent magnet (5) and the second permanent magnet (6).
