Pedestal and vapor deposition device
By setting up multiple substrate lifting mechanisms and insulation plates for large-area substrates in semiconductor manufacturing, adjusting the height and distance of the heater, the deposition effect problems caused by the lack of support and high thermal expansion of the substrate edges are solved, and the uniformity and process of the deposited film are achieved. stability.
Patent Information
- Application Number
- CN202420053789.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-09
- Publication Date
- 2024-12-27
- Estimated Expiration
- 2034-01-09
AI Technical Summary
In the existing semiconductor manufacturing, as the size of large-area substrate increases, the lack of support on the edge of the substrate leads to poor deposition effect, and the base of the high-thermal expansion material will deform at the PECVD process temperature, affecting the deposition effect.
By setting a plurality of substrate lifting mechanisms in the edge area of the base, the height of the heater and the distance from the upper electrode are adjusted, and the thermal expansion is adapted to the thermal expansion by using the thermal insulation plate and the ball head surface structure to ensure the parallelism between the heater and the upper electrode surface.
The uniformity and deposition effect of the deposited film are improved, and process problems caused by sagging edges and thermal expansion of the substrate are avoided.
Smart Images
Figure CN222250968U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductor manufacturing, in particular to a flat panel display supporting component. Background Art
[0002] Flat panel displays are panel screens made of electronic devices, used for television screens or computer screens. Flat panel displays are usually manufactured on large area substrates. Large area substrates are usually thin plates made of glass, polymer materials or other materials. Semiconductor device structures are deposited on large area substrates through a series of steps. Plasma enhanced chemical vapor deposition (PECVD) is a known process for deposition. In recent years, flat panel displays and large area substrates have increased significantly in size. Currently, the size of large area substrates has increased to about 2.5mх3m (or larger). The base used to support the large area substrate usually heats the large area substrate to enhance the deposition effect. However, the existing substrate support device for supporting the base only has a support rod at the center of the substrate to support the base and control the lifting and lowering of the base. When the size of the substrate is further increased, it is bound to lead to a lack of support at the edge of the substrate, causing the edge of the substrate to sag, thereby causing the gap between the substrate and the gas shower plate to change and the change in parallelism, and ultimately resulting in poor deposition effect. In addition, the base is usually made of a material with a high thermal expansion coefficient, and the process temperature of the PECVD process is usually 200-450°C. At this temperature, the base will be deformed outward in the horizontal direction due to heat, further affecting the deposition effect of the process.
[0003] It is to be understood that the above statements merely provide background technology related to the present invention and do not necessarily constitute prior art. Utility Model Content
[0004] Based on the above-mentioned technical problems, the purpose of the utility model is to provide a base, by adjusting the position of the substrate lifting mechanism in the corresponding area of the base, thereby adjusting the height of the heater in the area and the distance from the upper electrode, thereby ensuring the parallelism between the upper surface of the heater and the lower surface of the upper electrode, and ensuring the uniformity of the deposited film.
[0005] In order to achieve the above object, the utility model is implemented through the following technical solutions:
[0006] The utility model provides a base, comprising: a heater, an insulation board is arranged below the heater, the insulation board comprises a central area and an edge area, at least four substrate lifting mechanisms support the edge area of the insulation board, the first end of each substrate lifting mechanism is connected to the insulation board, the second end of each substrate lifting mechanism is connected to a driving mechanism, the first end of each substrate lifting mechanism comprises a first ball head surface, and the insulation board comprises a groove matching the first ball head surface.
[0007] Optionally, a plurality of grooves are provided on the lower surface of the insulation board in directions extending from the centroid of the lower surface of the insulation board toward the region where each substrate lifting mechanism is connected to the insulation board.
[0008] Optionally, the lower surface of the insulation board is square, and a plurality of grooves are arranged on the lower surface of the insulation board in directions extending from the centroid of the lower surface of the insulation board to respective corners of the lower surface of the insulation board.
[0009] Optionally, a central support mechanism is provided in the central area, a first end of the central support mechanism is fixedly connected to the insulation board, and a second end of the central support mechanism is connected to a driving mechanism.
[0010] Optionally, the second end of each substrate lifting mechanism includes a second spherical head surface.
[0011] Optionally, the lower surfaces of the heater and the insulation board are square, and the area of the lower surface of the heater is not less than 2m*2m.
[0012] Optionally, the lower surface of the heater is square, and the edge area is an area with a width less than 0.5 m from each side of the lower surface of the insulation board.
[0013] Optionally, the distance between the area where each substrate lifting mechanism is connected to the insulation board and the first side and the second side of the lower surface of the insulation board is 0.2-0.5 m.
[0014] Optionally, the heater and the insulation plate are further provided with through holes for accommodating lifting pins.
[0015] Optionally, an auxiliary heater is further provided around the periphery of the area where each substrate lifting mechanism is connected to the heater.
[0016] The utility model also provides a vapor deposition device, which includes an upper electrode, a reaction area surrounded by a chamber side wall and a lower chamber wall, and the base. A first bellows is arranged between each substrate lifting mechanism and the lower chamber wall, and a second bellows is arranged between the central support mechanism and the lower chamber wall.
[0017] Optionally, the central supporting mechanism is made of conductive material.
[0018] Optionally, the central supporting mechanism includes a grounding unit connected to the lower cavity wall.
[0019] Optionally, a plurality of grounding plates are disposed on the periphery of the base, a first end of a plurality of the grounding plates is connected to the heater, and a second end of a plurality of the grounding plates is connected to the lower cavity wall.
[0020] Optionally, a heating cable connected to a heating wire in the heater is provided in the central support mechanism.
[0021] Optionally, the base further comprises a lifting pin, an end of which can be embedded in the upper surface of the heater.
[0022] Compared with the prior art, the utility model has the following advantages:
[0023] The base provided by the utility model adjusts the position of the substrate lifting mechanism corresponding to the edge area of the base, thereby adjusting the height of the heater in this area and the distance from the upper electrode, thereby ensuring the parallelism between the upper surface of the heater and the lower surface of the upper electrode.
[0024] The base plate lifting mechanism of the utility model has a ball head surface, and the ball head surface slides in the groove of the heat insulation board to adapt to the lateral displacement of the heat insulation board caused by thermal expansion. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 It is a structural schematic diagram of the base of the utility model when it is in the process position;
[0026] Figure 2 It is a structural schematic diagram of the utility model when the base is in the film transmission position;
[0027] Figure 3 It is a top view of the base of the utility model;
[0028] Figure 4 It is a cross-sectional schematic diagram of the connection position between the substrate lifting mechanism and the insulation board of the utility model;
[0029] Figure 5 An embodiment of the lower surface of the insulation board of the utility model;
[0030] Figure 6 This is another embodiment of the lower surface of the insulation board of the present invention. DETAILED DESCRIPTION
[0031] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0032] It should be noted that, in this article, the terms "include", "comprises", "has" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "includes..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.
[0033] It should be noted that the drawings are all in a very simplified form and use inaccurate ratios, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present utility model.
[0034] like Figure 1 As shown, a vapor deposition device 100 provided by the utility model is provided. The vapor deposition device 100 includes an upper electrode 101, a reaction area surrounded by a chamber side wall 102 and a lower chamber wall 103. The upper electrode 101 includes a gas shower plate, which is connected to an external gas source and is used to supply reaction gas to the reaction area. A film transfer port 104 is provided on the chamber side wall 102, which is used to transfer the substrate to be processed into the reaction area and to transfer the processed substrate out of the reaction area. A base is arranged opposite to the upper electrode 101, and the base includes a heater 105. The upper surface of the heater 105 is used to support the substrate. The material of the substrate can be, for example, glass, polymer, etc., and the upper surface of the heater 105 is roughly parallel to the lower surface of the upper electrode 101. The heater 105 is provided with a plurality of through holes for accommodating a plurality of ejector pins 107. A power source is coupled to the upper electrode 101 to provide RF power to the upper electrode 101, thereby generating an electric field between the upper electrode 101 and the heater 105, so that the gas between the upper electrode 101 and the heater 105 forms plasma. The frequency of RF may be 13.56 MHz. In one embodiment, the power source may also be coupled to the heater 105.
[0035] The base is supported by at least four substrate lifting mechanisms 112. The first end of each substrate lifting mechanism 112 is connected to the heater 105, and the second end of each substrate lifting mechanism is connected to the first driving mechanism 113. The first driving mechanism 113 is a vertical brake, and the substrate lifting mechanism 112 is driven to rise through the first driving mechanism 113, thereby driving the heater 105 to rise.
[0036] Specifically, the heater 105 includes a central area and an edge area surrounding the central area, at least four substrate lifting mechanisms 112 support the edge area of the heater 105 , and a first end of each substrate lifting mechanism 112 is connected to the heater 105 .
[0037] Specifically, Figure 1 The heater 105 is shown in the process position, that is, the position in which the chemical vapor deposition process is performed. The heater 105 is driven upward to the process position by the substrate lifting mechanism 112, and the gap between the substrate supported by the heater 105 and the upper electrode 101 is the process gap. At this time, the upper end of the ejector pin 107 is embedded in the through hole provided on the upper surface of the heater 105, and is driven upward by the heater 105, and the upper surface of the ejector pin 107 is lower than or flat with the upper surface of the heater 105.
[0038] Figure 2 The heater 105 is shown in the film transfer position, that is, the position where the substrate is transferred into / out of the vapor deposition device 100. At this time, the heater 105 is lowered to the film transfer position, and the ejector pin 107 is also lowered along with the heater 105 until its lower end contacts the lower chamber cover 103. At this time, the upper end of the ejector pin 107 lifts the substrate, and the substrate is transferred into / out of the reaction area through the film transfer port 104 by a robotic arm provided in the transfer chamber connected to the vapor deposition device 100.
[0039] When the heater 105 is in Figure 1 When the process position is shown, it is necessary to ensure the parallelism between the upper surface of the heater 105 and the lower surface of the upper electrode 101 to ensure the uniformity of the plasma distribution during the process, thereby ensuring the uniformity of the thin film deposition. At the same time, it is necessary to control the size of the process gap between the substrate supported by the heater 105 and the upper electrode 101 to ensure the uniformity of the thin film deposition during the process. However, the existing substrate support device for supporting the base only sets a support rod at the center position of the substrate to support the base. The support rod is connected to an external driving mechanism to drive the base to rise. This structure cannot flexibly adjust the distance between the substrate and the upper electrode in a specific area, nor can it solve the problem of sagging of the edge area of the substrate caused by an overly large substrate.
[0040] In the utility model, the heater 105 includes a central area and an edge area surrounding the central area, and at least four substrate lifting mechanisms 112 are arranged in the edge area of the heater 105. The lower surface of the heater is square, and the area of the lower surface of the heater is not less than 2m*2m. In some embodiments, the four substrate lifting mechanisms 112 are respectively arranged near the four corners of the heater 105. When the heater 105 has sagging edges, the height of the heater 105 in the area and the distance from the upper electrode 101 are adjusted by adjusting the position of the substrate lifting mechanism 112 in the corresponding area, thereby ensuring the parallelism between the upper surface of the heater 105 and the lower surface of the upper electrode 101.
[0041] Furthermore, since a plurality of substrate lifting mechanisms 112 are provided, the area where the heater 105 contacts the substrate lifting mechanism 112 may become a cold area. To compensate for this uneven temperature, a circle of auxiliary heaters 301 ( Figure 3 ).
[0042] The process temperature of the PECVD process is usually 200-450°C, and the heater 105 will inevitably expand due to the heat at this temperature. The heater 105, which is usually made of aluminum material, will expand outward by about ten millimeters at this temperature. At this time, the four substrate lifting mechanisms provided at the edge area of the heater 105 as a supporting mechanism will also be driven outward by the thermal expansion of the heater 105, causing the substrate lifting mechanism to tilt and possibly forming scratches on the heater 105, affecting the use of the heater 105. In order to offset the negative impact of thermal expansion, an insulation plate 106 is also provided under the heater 105. The insulation plate 106 can be made of ceramic materials such as alumina, zirconia or porous ceramics, or can be made of materials such as quartz. The first end of each substrate lifting mechanism 112 is connected to the insulation plate 106 to support the insulation plate 106 and the heater 105. Please refer to Figure 3, the insulation board 106 includes a central area and an edge area corresponding to the heater 105, and at least four substrate lifting mechanisms are arranged in the edge area of the insulation board 106. In some embodiments, the lower surface of the insulation board 106 is square, and the distance d between the area where each substrate lifting mechanism 112 is connected to the insulation board 106 and the first side A and the second side B of the lower surface of the insulation board ranges from 0.2 to 0.5 m. In some other embodiments, multiple substrate lifting mechanisms 112 can also be arranged at other positions except near the four corners, and multiple substrate lifting mechanisms 112 are arranged in the edge area of the insulation board 106, and the edge area is an area with a width less than 1 / 3 of the corresponding side length from each side of the lower surface of the insulation board 106. Optionally, the edge area is an area with a width less than 0.5 m from each side of the lower surface of the insulation board. When the heater 105 droops at its edges, the height of the heater 105 and the distance from the upper electrode in the corresponding area are adjusted by adjusting the position of the substrate lifting mechanism 112 to ensure the parallelism between the upper surface of the heater 105 and the lower surface of the upper electrode.
[0043] Furthermore, the first end of each substrate lifting mechanism 112 is movably connected to the insulation board 106. Figure 4 The first end of each substrate lifting mechanism 112 includes a first ball head surface 401, and the insulation board 106 includes a groove 402 matching the first ball head surface 401. The first ball head surface 401 can slide in the groove 402. When the insulation board 106 expands outward due to heat, the first ball head surface 401 of each substrate lifting mechanism 112 slides in the groove 402 of the insulation board 106 to adapt to the lateral displacement caused by the thermal expansion of the insulation board 106. The second end of each substrate lifting mechanism 112 includes a second ball head surface, which is connected to the driving mechanism 113.
[0044] A plurality of grooves 402 are provided on the lower surface of the insulation plate 106 in directions extending from the centroid of the lower surface of the insulation plate 106 toward the region where each substrate lifting mechanism 112 is connected to the insulation plate 106 .
[0045] In some embodiments, the lower surface of the insulation board 106 is square, and the four substrate lifting mechanisms 112 are respectively disposed near the four corners of the insulation board 106. A plurality of grooves are disposed on the lower surface of the insulation board 106 in directions extending from the centroid of the lower surface of the insulation board 106 to the respective corners of the lower surface of the insulation board 106. The grooves may be, for example, Figure 5The first groove 5021 and the second groove 5022 are arranged in the directions extending along the diagonal line of the lower surface of the insulation board. In some other embodiments, the grooves may also be, for example, Figure 6 The third groove 6021, the fourth groove 6022, the fifth groove 6023 and the sixth groove 6024 are shown. The third to sixth grooves are arranged in directions extending from the centroid of the lower surface of the insulation board 106 to the corners of the lower surface of the insulation board. The cross section of the groove can be, for example, a curved surface, a spherical surface, a hyperboloid or an elliptical surface, which matches the first ball head surface 401 of the substrate lifting mechanism 112. When the insulation board 106 and the heater 105 expand due to heat, the first ball head surface 401 of each substrate lifting mechanism 112 slides in the groove, and its sliding direction is the extension direction of each groove to absorb the maximum thermal expansion of the connection between the substrate lifting mechanism 112 and the insulation board 106.
[0046] In some embodiments, the substrate lifting mechanism 112 may also be set at other positions of the edge area of the insulation plate 106. Accordingly, a plurality of grooves are set on the lower surface of the insulation plate 106 in directions extending from the centroid of the lower surface of the insulation plate 106 to the area where each substrate lifting mechanism 112 is connected to the insulation plate 106.
[0047] When the substrate lifting mechanism 112 slides in the groove to absorb thermal expansion, the height of the heater 105 at the corresponding position will inevitably decrease. At this time, by adjusting the vertical distance of the substrate lifting mechanism 112 in the corresponding area of the insulation board 106, the height of the heater 105 in this area and the distance from the upper electrode are adjusted, thereby ensuring the parallelism between the upper surface of the heater 105 and the lower surface of the upper electrode.
[0048] A central support mechanism 108 is disposed in the central area of the insulation board 106, and a first end of the central support mechanism 108 is fixedly connected to the insulation board 106. A second end of the central support mechanism 108 is connected to a second drive mechanism 110, and the second drive mechanism 110 is a vertical brake, through which the base is driven to rise or fall.
[0049] A first bellows 111 is provided between each substrate lifting mechanism 112 and the lower chamber wall 103, and a second bellows 109 is provided between the central support mechanism 108 and the lower chamber wall. The first bellows 111 and the second bellows 109 can be made of stainless steel, aluminum or aluminum alloy, or copper with good electrical conductivity.
[0050] In some embodiments, the central support mechanism 108 is made of a conductive material and is directly grounded through the central support mechanism 108. In some other embodiments, the central support mechanism 108 includes a grounding unit connected to the lower cavity wall 103 and is grounded through the grounding unit. In some other embodiments, a plurality of grounding plates are disposed on the periphery of the base, a plurality of first ends of the grounding plates are connected to the heater 105, and a plurality of second ends of the grounding plates are connected to the lower cavity wall 103. A heating cable connected to the heating wire in the heater 105 is also disposed in the central support mechanism 108.
[0051] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.
Claims
1. A base, characterized in that: include: A heater, wherein an insulation plate is arranged below the heater, the insulation plate includes a central area and an edge area, at least four substrate lifting mechanisms support the edge area of the insulation plate, the first end of each substrate lifting mechanism is connected to the insulation plate, the second end of each substrate lifting mechanism is connected to a driving mechanism, the first end of each substrate lifting mechanism includes a first ball head surface, and the lower surface of the insulation plate includes a groove matching the first ball head surface.
2. The base according to claim 1, characterized in that A plurality of grooves are arranged on the lower surface of the insulation board in directions extending from the centroid of the lower surface of the insulation board toward the area where each substrate lifting mechanism is connected to the insulation board.
3. The base according to claim 2, characterized in that The lower surface of the insulation board is square, and a plurality of grooves are arranged on the lower surface of the insulation board in directions extending from the centroid of the lower surface of the insulation board to the corners of the lower surface of the insulation board.
4. The base according to claim 1, characterized in that The central area is provided with a central support mechanism, a first end of the central support mechanism is fixedly connected to the insulation board, and a second end of the central support mechanism is connected to a driving mechanism.
5. The base according to claim 1, characterized in that The second end of each substrate lifting mechanism includes a second ball head surface.
6. The base according to claim 4, characterized in that The lower surfaces of the heater and the insulation board are square, and the area of the lower surface of the heater is not less than 2m*2m.
7. The base according to claim 4, characterized in that The lower surface of the insulation board is square, and the edge area is an area with a width less than 0.5 m from each side of the lower surface of the insulation board.
8. The base according to claim 7, characterized in that The distance between the area where each substrate lifting mechanism is connected to the insulation board and the first side and the second side of the lower surface of the insulation board is 0.2-0.5 m.
9. The base according to claim 8, characterized in that The heater and the insulation plate are also provided with through holes for accommodating lifting pins.
10. The base according to claim 9, characterized in that An auxiliary heater is also arranged at the periphery of the area where each substrate lifting mechanism is connected to the heater.
11. A vapor deposition device, comprising an upper electrode, a reaction area surrounded by a chamber side wall and a lower chamber wall, characterized in that: It also includes a base as described in any one of claims 4 to 10, a first bellows is arranged between each substrate lifting mechanism and the lower cavity wall, and a second bellows is arranged between the central support mechanism and the lower cavity wall.
12. The vapor deposition apparatus according to claim 11, characterized in that: The central supporting mechanism is made of conductive material.
13. The vapor deposition apparatus according to claim 11, characterized in that: The central supporting mechanism comprises a grounding unit connected to the lower cavity wall.
14. The vapor deposition apparatus according to claim 11, characterized in that: A plurality of grounding plates are arranged on the periphery of the base, a plurality of first ends of the grounding plates are connected to the heater, and a plurality of second ends of the grounding plates are connected to the lower cavity wall.
15. The vapor deposition apparatus according to claim 11, characterized in that: A heating cable connected to the heating wire in the heater is arranged in the central support mechanism.
16. The vapor deposition apparatus according to claim 11, characterized in that: The base further includes a lifting pin, an end of which can be engaged with an upper surface of the heater.