Laminated zero-dimensional material filtering structure and spectrum chip

Abstract

The utility model provides a laminated zero-dimensional material filtering structure and a spectrum chip. The laminated zero-dimensional material filtering structure comprises a first filtering layer and a second filtering layer, wherein the first filtering layer comprises a plurality of first filtering structures; the second light filtering layer comprises a zero-dimensional material film, the thickness of the zero-dimensional material film ranges from 0.1 nm to 100 nm, the zero-dimensional material film is arranged on one side of the first light filtering layer, a plurality of second light filtering structures are formed on the zero-dimensional material film, the plurality of second light filtering structures and the plurality of first light filtering structures are arranged in a one-to-one correspondence mode, and the thickness of the zero-dimensional material film ranges from 0.1 nm to 100 nm. The wavelength ranges of light allowed to pass through by the first light filtering structure and the opposite second light filtering structure are partially overlapped, and the zero-dimensional material film is an element simple substance film or an element compound film or a mixture film. According to the laminated zero-dimensional material filtering structure, fine light splitting is realized, narrowband purer light can be obtained, and the filtering effect is improved.

Description

Technical Field

[0001] The present application relates to the technical field of optical filtering structures, and in particular to a stacked zero-dimensional material optical filtering structure and a spectral chip. Background Art

[0002] At present, the mainstream approach to the filter structure of CMOS spectral chips is to stack N layers of dielectric films. Each layer of dielectric film contains different material components (such as a compound of a rare metal), and the thickness of each layer of dielectric film is also different. By adjusting the material composition and thickness of the dielectric film, as well as the order of up and down arrangement, a filter structure that only allows light of a specific wavelength to pass is obtained.

[0003] In the related art, in order to narrow the wavelength range of light allowed to pass through the filter structure, two or more layers of dielectric films are usually stacked together, resulting in a larger thickness of the filter structure. Utility Model Content

[0004] The embodiments of the present application provide a stacked zero-dimensional material filter structure and a spectrum chip, which can improve the technical problem of the large thickness of the filter structure.

[0005] In a first aspect, an embodiment of the present application provides a stacked zero-dimensional material filter structure, comprising:

[0006] A first filter layer, wherein the first filter layer comprises a plurality of first filter structures;

[0007] The second filter layer includes a zero-dimensional material film, the thickness of the zero-dimensional material film is between 0.1nm and 100nm, the zero-dimensional material film is arranged on one side of the first filter layer, the zero-dimensional material film forms a plurality of second filter structures, the plurality of second filter structures are arranged one by one opposite to the plurality of first filter structures, wherein the wavelength ranges of light allowed to pass through by the first filter structure and the corresponding second filter structure partially overlap, and the zero-dimensional material film is an element single substance film, an element compound film, or a mixture film.

[0008] In one embodiment, the stacked zero-dimensional material filtering structure includes at least one third filtering layer, and the third filtering layer is arranged on the side of the second filtering layer away from the first filtering layer. The third filtering layer includes a plurality of third filtering structures, and the plurality of third filtering structures are arranged one by one opposite to the plurality of second filtering structures. The first filtering structure and the corresponding second filtering structure are used to pass optical signals in a first wavelength range, and the third filtering structure opposite to the second filtering structure is used to pass optical signals in a second wavelength range, and the first wavelength range and the second wavelength range partially overlap.

[0009] In one embodiment, the first light filtering structure and the second light filtering structure are made of the same material, and have different thicknesses.

[0010] In one embodiment, the first light filtering structure and the second light filtering structure are made of different materials, and the first light filtering structure and the second light filtering structure have the same thickness.

[0011] In one embodiment, the first light filtering structure and the second light filtering structure are made of different materials and have different thicknesses.

[0012] In one embodiment, the zero-dimensional material film is disposed on one side of the first filter layer by deposition or plating.

[0013] In one embodiment, the first filter layer is formed with a plurality of optical channels, and the first filter layer comprises:

[0014] A substrate, wherein a plurality of optical channel regions are provided on the surface of the substrate, and the plurality of optical channel regions correspond one to one to the plurality of optical channels;

[0015] A first filter structure is provided at each of the optical channel regions. The thicknesses of the first filter structures are different, and the thickness of the first filter structures ranges from 0.1 nm to 100 nm.

[0016] In one embodiment, the zero-dimensional material film is disposed in the optical channel region by deposition or plating.

[0017] In one embodiment, the zero-dimensional material film has a thickness of 2nm-15nm.

[0018] In a second aspect, an embodiment of the present application provides a spectral chip, comprising the above-mentioned stacked zero-dimensional material filtering structure.

[0019] Beneficial effects of the embodiments of the present application:

[0020] In the embodiment of the present application, by using one of the first filter structure and the second filter structure to perform preliminary filtering on the light, and using the other of the first filter structure and the second filter structure to perform secondary filtering on the light, the wavelength range of the obtained light is further narrowed, and double filtering of the light by the first filter layer and the second filter layer is achieved, and fine spectrometry is achieved, and a narrow band of purer light can be obtained, thereby improving the filtering effect. At the same time, since the thickness of a single layer of elemental simple substance and / or elemental compound is smaller than that of the dielectric film, compared with the stacked dielectric film filter structure in the related art, while ensuring that the zero-dimensional material thickness of the multiple second filter structures is different, the overall thickness of the second filter layer is reduced, and the thickness of the stacked zero-dimensional material filter structure can be effectively reduced. Moreover, the second filter layer can be formed by depositing or plating the zero-dimensional material on the surface of the first filter layer, thereby simplifying the processing process of the stacked zero-dimensional material filter structure and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 This is one of the flow charts of the method for preparing the stacked zero-dimensional material filter structure provided in the embodiments of the present application;

[0023] Figure 2 This is the second flow chart of the method for preparing the stacked zero-dimensional material filter structure provided in the embodiment of the present application;

[0024] Figure 3 This is the third flow chart of the method for preparing the stacked zero-dimensional material filter structure provided in the embodiment of the present application;

[0025] Figure 4 is a schematic diagram of the structure of the first filter layer provided in an embodiment of the present application, wherein a larger number in the figure indicates a larger thickness of the element single substance film or element compound film at that position;

[0026] Figure 5 is a schematic structural diagram of a first filter layer provided in an embodiment of the present application;

[0027] Figure 6 This is the fourth flow chart of the method for preparing the stacked zero-dimensional material filter structure provided in the embodiment of the present application;

[0028] Figure 7 It is a structural schematic diagram of a stacked zero-dimensional material filtering structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the directional words such as "upper" and "lower" used generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inside" and "outside" refer to the outline of the device.

[0030] Combine the following Figures 1 to 7 The stacked zero-dimensional material filter structure and spectrum chip of the present application are described.

[0031] According to the embodiment of the first aspect of the present application, Figure 6 , the preparation method of the stacked zero-dimensional material filter structure includes:

[0032] Step 401, obtaining a first filter layer 10, wherein the first filter layer 10 is provided with a plurality of first filter structures;

[0033] It can be understood that each first filter structure forms a corresponding optical channel, that is, the first filter structure can filter light, and only light within a specific wavelength range can pass through the first filter structure.

[0034] Exemplarily, the multiple first filter structures are different, that is, the multiple first filter structures correspond to different optical channels, and the wavelength ranges of light allowed to pass through by the multiple first filter structures are different.

[0035] Step 402: depositing a zero-dimensional material on the surface of the first filter layer 10 to form a second filter layer 20, wherein the second filter layer 20 comprises a plurality of second filter structures, the thickness of the second filter structures is between 0.1 nm and 100 nm, the plurality of second filter structures are arranged opposite to the plurality of first filter structures one by one, and the zero-dimensional material comprises a single substance of at least one element and / or a compound of at least one element;

[0036] The wavelength ranges of light allowed to pass through by the first light filtering structure and the second light filtering structure formed on the surface of the first light filtering structure partially overlap.

[0037] It is understandable that the zero-dimensional material is deposited on the surface of the first filter layer 10 , a certain thickness of the zero-dimensional material is formed on the surface of the first filter layer 10 , and the certain thickness of the zero-dimensional material constitutes the second filter layer 20 .

[0038] When zero-dimensional material is deposited on the surface of the first filter layer 10, the second filter structure is arranged opposite to the first filter structure one by one, that is, zero-dimensional material is deposited on the surface of the first filter structure to form the second filter structure, so that the first filter structure and the second filter structure overlap.

[0039] Among them, since the thickness of the single layer of elemental simple substance and / or elemental compound is at the nanometer level, the present application can adjust the thickness of the filter structure composed of the elemental simple substance and / or elemental compound at the nanometer level, and thus can reduce the thickness of the second filter structure while ensuring that the thickness of the elemental simple substance and / or elemental compound of the plurality of second filter structures are different, so that the thickness of the second filter structure can be between 0.1 nm and 100 nm, and thus is significantly different from the dielectric film filter structure, so that the thickness of the second filter structure of the present application will be less than the thickness of the dielectric film filter structure.

[0040] It can be understood that the thickness of the element single substance and / or element compound of the same second filter structure is the same, which ensures the filtering performance of the element single substance and / or element compound formed in the same second filter structure.

[0041] It can be understood that the zero-dimensional material includes a simple substance of at least one element and / or a compound of at least one element, which means that the zero-dimensional material can be at least one of a simple substance of an element, a compound of an element, and a mixture.

[0042] Exemplarily, the thicknesses of the plurality of second filter structures of the second filter layer 20 may be the same or different. In other words, the wavelength ranges of the light allowed to pass through by the plurality of second filter structures may be the same or different.

[0043] According to the method for preparing the stacked zero-dimensional material filter structure of the embodiment of the present application, the second filter layer 20 is formed by depositing a zero-dimensional material on the surface of the first filter layer 10, and the multiple second filter structures of the second filter layer 20 are arranged one by one opposite to the multiple first filter structures of the first filter layer 10, that is, the second filter structure is stacked on the surface of the first filter structure, and the first filter structure and the second filter structure filter the light together. Since the wavelength range of the light allowed to pass by the first filter structure and the second filter structure opposite to the first filter structure partially overlap, the wavelength range of the light will gradually narrow after passing through the first filter structure and the second filter structure. That is, the present application can use one of the first filter structure and the second filter structure to perform preliminary filtering on the light, and use the other of the first filter structure and the second filter structure to perform secondary filtering on the light, so that the wavelength range of the obtained light is further narrowed, and the double filtering of the light by the first filter layer 10 and the second filter layer 20 is realized, and fine spectrometry is realized, and a narrow band of purer light can be obtained, which improves the filtering effect. At the same time, the second filter layer 20 is formed by depositing zero-dimensional materials. Compared with the method of stacking dielectric films in the related art, since the single layer thickness of elemental simple substances and / or elemental compounds is smaller than that of dielectric films, the thickness of zero-dimensional materials of different second filter structures can be adjusted on a smaller scale, thereby reducing the overall thickness of the second filter layer 20 while ensuring that the thickness of the zero-dimensional materials of multiple second filter structures are different, which can effectively reduce the thickness of the stacked zero-dimensional material filter structure. The second filter layer 20 can be formed by depositing or plating the zero-dimensional material on the surface of the first filter layer 10, which simplifies the processing process of the stacked zero-dimensional material filter structure and improves production efficiency.

[0044] It is understandable that the light may enter the first filter structure first, or may enter the second filter structure first.

[0045] Exemplarily, when light first enters the first filter structure, the first filter structure will filter the light, and only light within the wavelength range allowed by the first filter structure can enter the second filter structure. Assuming that the wavelength range of light allowed by the first filter structure is A, and the wavelength range of light allowed by the second filter structure is B, when light within the wavelength range A enters the second filter structure, the wavelength range of light exiting the second filter structure is at the intersection of the wavelength range A and the wavelength range B, that is, the second filter structure is used to further filter the light passing through the first filter structure, so that the wavelength range of the obtained light is further narrowed.

[0046] It can be understood that at least two second filter layers 20 can be formed on the surface of the first filter layer 10, and the second filter structures of different second filter layers 20 allow different wavelength ranges of light to pass through, that is, the light can be filtered three times or more, and the wavelength range of the light can be further limited.

[0047] Specifically, the thickness of the zero-dimensional material of each filter layer is between 0.1 nm and 100 nm.

[0048] In one embodiment of the present application, a zero-dimensional material is deposited on the surface of the first filter layer 10, including:

[0049] The zero-dimensional material is deposited at different times on the surfaces of different first filter structures to form second filter structures with different thicknesses on the surfaces of the plurality of first filter structures.

[0050] It is understandable that by depositing zero-dimensional materials at different times on the surfaces of different first filter structures, zero-dimensional materials of different thicknesses are formed on the surfaces of different first filter structures, so that different second filter structures allow different wavelength ranges of light to pass through.

[0051] Specifically, the wavelength range of light allowed to pass through each second filter structure of the second filter layer 20 can be determined according to the wavelength range of light allowed to pass through each first filter structure of the first filter layer 10 and the required wavelength range of light.

[0052] In one embodiment of the present application, after a zero-dimensional material is deposited on the surface of the first filter layer 10 to form the second filter layer 20, the method includes:

[0053] A zero-dimensional material is deposited on the surface of the second filter layer 20 to form a third filter layer 30, wherein the third filter layer 30 includes a plurality of third filter structures, and the plurality of third filter structures are arranged one by one opposite to the plurality of second filter structures, wherein the wavelength range of light allowed to pass through by the first filter structure and the second filter structure opposite to the first filter structure is a first range, and the wavelength range of light allowed to pass through by the third filter structure opposite to the second filter structure is a second range, and the first range and the second range partially overlap.

[0054] It can be understood that after forming the second filter layer 20, if the light needs to be further filtered, a zero-dimensional material can be deposited on the surface of the second filter layer 20, that is, a zero-dimensional material can be deposited on the surface of the second filter structure to form a third filter structure, so that multiple first filter structures, multiple second filter structures and multiple third filter structures are arranged one by one, so that the first filter structure, the second filter structure and the third filter structure are stacked together. When the light passes through the first filter structure and the second filter structure, the wavelength range of the light is the first range value, and then the light is incident on the third filter structure. The third filter structure can filter the light, and the third filter structure only allows light with a wavelength range of the second range to pass through. The wavelength range of the light passing through the third filter structure is the overlapping range of the first range and the second range, and thus light with a narrower wavelength range can be obtained.

[0055] In one embodiment of the present application, the target thickness of the zero-dimensional material on the surface of each first filter structure is arranged in order from small to large as B1, B2, B3, ..., B n , depositing a zero-dimensional material on the surface of the first filter layer 10, including:

[0056] Depositing a zero-dimensional material with a thickness of B1 on the surface of the first filter layer 10;

[0057] A first filter structure mask corresponding to the thickness of B1;

[0058] Deposit B on the surface of the substrate i -B i-1 Zero-dimensional material of thickness, where 2≤i≤n;

[0059] To B i A first filter structure mask corresponding to a thickness, wherein i≤n-1;

[0060] Repeatedly deposit B on the surface of the substrate i -B i-1 Thickness of zero-dimensional material steps and B i The first filter structure mask step corresponding to the thickness until B n The surface of the first filter structure corresponding to the thickness is deposited with B n Thickness of zero-dimensional material.

[0061] It can be understood that, according to the wavelength range of the light finally required and the wavelength range of the light allowed to pass through the first filter structure, the target thickness of the zero-dimensional material to be deposited on the surface of the first filter structure can be determined, and the target thickness of the zero-dimensional material to be deposited on the surface of each first filter structure is arranged in order from large to small: B1, B2, B3, ..., B n .

[0062] When depositing the zero-dimensional material on the surface of the first filter layer 10, a layer of zero-dimensional material with a thickness of B1 is first deposited on the entire surface. At this time, the surface of the first filter structure with a target thickness of B1 has been deposited with a zero-dimensional material with a thickness of B1, that is, the surface of the first filter structure with a target thickness of B1 has completed the deposition of the zero-dimensional material. Then, the surface of the first filter structure corresponding to the thickness of B1 is masked to avoid the subsequent deposition of the zero-dimensional material affecting the surface of the first filter structure corresponding to the thickness of B1. i -B i-1 The zero-dimensional material of thickness, i increases from 2 to n in sequence, that is, firstly, a zero-dimensional material of thickness B2-B1 is deposited on the surface of the first filter layer 10. Since the zero-dimensional material of thickness B1 has been deposited on the surface of the first filter layer 10, then at this time, B2-B1+B1, that is, a zero-dimensional material of thickness B2 is deposited on the surface of the first filter layer 10, indicating that at this time, the surface of the first filter structure with a target thickness of B2 has been deposited with a zero-dimensional material of thickness B2, and the deposition work on the surface of the first filter structure corresponding to the thickness of B2 has been completed. Then, the surface of the first filter structure corresponding to the thickness of B2 is masked to avoid affecting the surface of the first filter structure corresponding to the thickness of B2 when the zero-dimensional material is deposited. And so on, until the target thickness is B2, the zero-dimensional material of thickness B2 has been deposited on the surface of the first filter structure corresponding to the thickness of B2. n The surface of the first filter structure is deposited with B n Thickness of zero-dimensional material.

[0063] It can be understood that when the target thickness B n The surface of the first filter structure is deposited with B n When the zero-dimensional material has a thickness of 100,000,000, it means that the stacked zero-dimensional material filter structure has been completed and no further zero-dimensional material deposition will be performed. n The surface of the first filter structure having a thickness corresponding to that of the first filter structure is masked.

[0064] In one embodiment of the present application, Figure 1 , obtaining a first filter layer 10, comprising:

[0065] Step 101, obtaining a substrate 1, wherein a plurality of optical channel regions are provided on the surface of the substrate 1, and the plurality of optical channel regions correspond one to one to the plurality of optical channels of the stacked zero-dimensional material filter structure;

[0066] It can be understood that the surface of the substrate 1 is provided with a plurality of optical channel regions, each of which corresponds to an optical channel of a stacked zero-dimensional material filter structure. The surface of the substrate 1 is divided into a plurality of optical channel regions, so that the corresponding first filter structure is formed in different optical channel regions, and then a filter layer having a plurality of optical channels is formed on the surface of the substrate 1.

[0067] It can be understood that the surface of the substrate 1 is provided with multiple optical channel areas, which can be formed by providing corresponding dividing lines on the surface of the substrate 1, or the surface of the substrate 1 can be divided into multiple areas at the operating end without directly providing dividing lines on the surface of the substrate 1.

[0068] Step 102: depositing a zero-dimensional material on the surface of substrate 1, wherein the zero-dimensional material includes a simple substance of at least one element and / or a compound of at least one element, and the deposition times in different optical channel regions are different to form a first filtering structure with different thicknesses in multiple optical channel regions, and the thickness of the first filtering structure is between 0.1 nm and 100 nm.

[0069] It can be understood that after obtaining a substrate 1 having multiple optical channel regions, different times of zero-dimensional materials are deposited at different optical channel regions, thereby forming zero-dimensional materials of different thicknesses at multiple optical channel regions. The zero-dimensional material at each optical channel region can play a filtering role, and zero-dimensional materials of different thicknesses allow different light to pass through, that is, zero-dimensional materials of different thicknesses correspond to different central wavelengths of optical channels. In other words, by depositing zero-dimensional materials at the optical channel region, a first filtering structure can be formed at the optical channel region, that is, a first filtering structure can be constructed on the surface of the substrate 1.

[0070] Specifically, since the thickness of a single layer of elemental simple substance and / or elemental compound is at the nanometer scale, the present application can adjust the thickness of the filter structure composed of elemental simple substance and / or elemental compound at the nanometer scale, thereby reducing the thickness of the first filter structure while ensuring that the thickness of the elemental simple substance and / or elemental compound in multiple optical channel regions is different, so that the thickness of the first filter structure can be between 0.1nm and 100nm.

[0071] It can be understood that the thickness of the element single substance and / or element compound in the same optical channel region is the same, which ensures the filtering performance of the element single substance and / or element compound formed in the optical channel region.

[0072] Exemplarily, the zero-dimensional material includes a simple substance of at least one element and / or a compound of at least one element, which means that the zero-dimensional material can be at least one of a simple substance of an element, a compound of an element, and a mixture.

[0073] According to the method for preparing the stacked zero-dimensional material filter structure of the embodiment of the present application, by depositing the zero-dimensional material at the optical channel region of the substrate 1, the zero-dimensional material at each optical channel region constitutes a first filter structure, and the first filter structures formed at all the optical channel regions together constitute the first filter layer 10. By controlling the number of depositions at different optical channel regions, while the zero-dimensional material is deposited at all the optical channel regions of the substrate 1, the thickness of the zero-dimensional material at multiple optical channel regions is different, and thus first filter structures with different central wavelengths of optical channels can be formed at multiple optical channel regions. The present application forms a first filter structure by depositing zero-dimensional material to replace the use of stacked dielectric films to form a filter unit in the related art. Since the single layer thickness of the element single substance and / or element compound is smaller than the dielectric film, the thickness of the zero-dimensional material corresponding to different first filter structures can be adjusted on a smaller scale, thereby reducing the overall thickness of the first filter layer 10 while ensuring that the thickness of the zero-dimensional material of multiple first filter structures is different, which can effectively reduce the thickness of the stacked zero-dimensional material filter structure. The first filter structure can be formed by arranging the zero-dimensional material in the optical channel area by deposition or plating, which simplifies the processing process of the first filter structure and improves production efficiency.

[0074] It can be understood that since the present application forms the first filter structure by depositing elemental simple substances and / or elemental compounds, the thickness of the obtained first filter structure is nanometer-level. Compared with the dielectric film filter structure in the related art, the thickness of the first filter structure of the present application is smaller.

[0075] In one embodiment of the present application, Figure 3 , depositing a zero-dimensional material on the surface of substrate 1, comprising:

[0076] Step 301, obtaining the central wavelength of each optical channel;

[0077] Step 302: Determine the target thickness of the zero-dimensional material at each optical channel region based on the central wavelength of each optical channel;

[0078] Step 303 : depositing elemental simple substances and / or elemental compounds on the surface of substrate 1 based on the target thickness of the zero-dimensional material at each optical channel region.

[0079] It is understandable that when depositing zero-dimensional material on the surface of substrate 1, the central wavelength of each optical channel will be obtained first, and the target thickness of the zero-dimensional material at the optical channel area corresponding to the optical channel can be determined based on the central wavelength of the optical channel. Then, based on the target thickness of the zero-dimensional material corresponding to the optical channel area, elemental simple substances and / or elemental compounds are deposited on the surface of substrate 1 to form elemental simple substances and / or elemental compounds with target thickness in the optical channel area. This embodiment can accurately form zero-dimensional materials of different thicknesses in different optical channel areas by depositing elemental simple substances and / or elemental compounds on the surface of substrate 1 according to the target thickness of the zero-dimensional material corresponding to each optical channel area.

[0080] It can be understood that based on the target thickness of the zero-dimensional material in each optical channel area, the number of depositions corresponding to each optical channel area can be determined, and the deposition of elemental substances and / or elemental compounds can be controlled according to the number of depositions, so that elemental substances and / or elemental compounds with corresponding target thicknesses can be accurately formed in each optical channel area.

[0081] It can be understood that zero-dimensional materials of different thicknesses correspond to different central wavelengths of optical channels, and thus the thickness of the zero-dimensional material can be determined according to the required central wavelength of the optical channel.

[0082] In one embodiment of the present application, the target thickness of the zero-dimensional material at each optical channel region is arranged in ascending order as T1, T2, T3, ..., T n , depositing a zero-dimensional material on the surface of substrate 1, comprising:

[0083] Depositing a zero-dimensional material with a thickness of T1 on the surface of substrate 1;

[0084] Mask the optical channel area corresponding to T1 thickness;

[0085] T is deposited on the surface of substrate 1. i -T i-1 Zero-dimensional material of thickness, where 2≤i≤n;

[0086] To T i Optical channel area mask corresponding to thickness, where i≤n-1;

[0087] Repeatedly deposit T on the surface of substrate 1 i -T i-1 Thickness of zero-dimensional material steps and T i The thickness of the optical channel area corresponds to the mask step until T n The optical channel area corresponding to the thickness is deposited with T n Thickness of zero-dimensional material.

[0088] It can be understood that the target thickness of the zero-dimensional material to be deposited in each optical channel region can be determined according to the central wavelength of the optical channel corresponding to each optical channel region, and the target thickness of the zero-dimensional material to be deposited in each optical channel region is arranged in order from large to small: T1, T2, T3, ..., T n .

[0089] When depositing zero-dimensional material on the surface of substrate 1, first deposit a layer of zero-dimensional material with a thickness of T1 on the surface of the entire substrate 1. At this time, zero-dimensional material with a thickness of T1 has been deposited in the optical channel area with a target thickness of T1, that is, the deposition of zero-dimensional material has been completed in the optical channel area with a target thickness of T1. Then, mask the optical channel area corresponding to the thickness of T1 to avoid affecting the optical channel area corresponding to the thickness of T1 when the zero-dimensional material is subsequently deposited. Then, T1 is deposited on the surface of substrate 1. i -T i-1 The thickness of zero-dimensional material, i increases from 2 to n successively, that is, firstly, a zero-dimensional material with a thickness of T2-T1 is deposited on the surface of substrate 1. Since a zero-dimensional material with a thickness of T1 has been deposited on the surface of substrate 1, at this time, T2-T1+T1, i.e., a zero-dimensional material with a thickness of T2 is deposited on the surface of substrate 1. This means that at this time, a zero-dimensional material with a thickness of T2 has been deposited in the optical channel area with a target thickness of T2, and the deposition work in the optical channel area corresponding to the thickness of T2 has been completed. Then, the optical channel area corresponding to the thickness of T2 is masked to avoid the influence of the thickness deposition of zero-dimensional material on the optical channel area corresponding to the thickness of T2. And so on, until the target thickness is T n The optical channel area is deposited with T n Thickness of zero-dimensional material.

[0090] It can be understood that when the target thickness T n The optical channel area is deposited with T n When the zero-dimensional material has a thickness of 100,000,000, it means that the stacked zero-dimensional material filter structure has been completed and no further zero-dimensional material deposition will be performed. n The optical channel area corresponding to the thickness is masked.

[0091] In one embodiment of the present application, Figure 2 , obtaining a first filter layer 10, comprising:

[0092] Step 201, obtaining a substrate 1, wherein a plurality of optical channel regions are provided on the surface of the substrate 1, and the plurality of optical channel regions correspond one-to-one to the plurality of optical channels of the stacked zero-dimensional material filter structure;

[0093] It can be understood that the surface of the substrate 1 is provided with a plurality of optical channel regions, each of which corresponds to an optical channel of a stacked zero-dimensional material filter structure. The surface of the substrate 1 is divided into a plurality of optical channel regions, so that corresponding filter units are formed in different optical channel regions later, thereby forming a filter structure with a plurality of optical channels on the surface of the substrate 1.

[0094] It can be understood that the surface of the substrate 1 is provided with multiple optical channel areas, which can be formed by providing corresponding dividing lines on the surface of the substrate 1, or the surface of the substrate 1 can be divided into multiple areas at the operating end without directly providing dividing lines on the surface of the substrate 1.

[0095] Step 202, coating a zero-dimensional material film 2 on the surface of the substrate 1, wherein the zero-dimensional material film 2 includes a single substance of at least one element and / or a compound of at least one element;

[0096] It can be understood that in order to make multiple optical channel areas correspond to multiple optical channels one by one, the thickness of the zero-dimensional material film 2 to be plated at the multiple optical channel areas is different. Since the thickness of the zero-dimensional material film 2 corresponding to different optical channels is different, the thickness of the zero-dimensional material film 2 plated on the surface of the substrate 1 must be greater than or equal to the maximum thickness of the zero-dimensional material film 2 to be plated at the multiple optical channel areas, so as to facilitate the subsequent etching of multiple different thickness areas on the zero-dimensional material film 2.

[0097] Step 203 , etching the zero-dimensional material film 2 to form first filter structures with different thicknesses in a plurality of optical channel regions, wherein the thickness of the first filter structures is between 0.1 nm and 100 nm.

[0098] It can be understood that the zero-dimensional material film 2 on the surface of the substrate 1 is etched to reduce the thickness of the zero-dimensional material film 2 in multiple optical channel areas, so that the thickness of the zero-dimensional material film 2 in each optical channel area is at the required target thickness, so that a first filtering structure can be formed in each optical channel area. Since the thickness of the element single substance and / or element compound in different optical channel areas is different, the optical channels corresponding to different optical channel areas are also different, thereby forming a multi-channel filtering layer on the surface of the substrate 1.

[0099] It is understandable that the zero-dimensional material films 2 corresponding to multiple or all optical channel regions may be etched simultaneously, or the zero-dimensional material film 2 corresponding to one of the optical channel regions may be etched separately.

[0100] Exemplarily, the zero-dimensional material film 2 may be an element single substance film or an element compound film or a mixture film.

[0101] Specifically, a layer of zero-dimensional material film 2 is plated on the surface of substrate 1, and then the zero-dimensional material film 2 is etched to obtain element single substance and / or element compound of different thicknesses in different optical channel regions. When etching the zero-dimensional material film 2, only a layer of element single substance and / or element compound on the surface of the zero-dimensional material film 2 can be etched, that is, compared with the dielectric film in the related art, the present application can adjust the thickness of the zero-dimensional material film 2 on a smaller scale, thereby ensuring that the thickness of the zero-dimensional material film 2 in multiple optical channel regions is different while reducing the overall thickness of the first filter layer 10, which can effectively reduce the thickness of the stacked zero-dimensional material filter structure, and the first filter structure can be formed by etching the zero-dimensional material film 2, which simplifies the processing process of the first filter structure and improves production efficiency.

[0102] In one embodiment of the present application, etching the zero-dimensional material film 2 includes:

[0103] Get the center wavelength of each optical channel;

[0104] determining a target thickness of the zero-dimensional material at a region of each optical channel based on a central wavelength of each optical channel;

[0105] Based on the target thickness of the zero-dimensional material at each optical channel region, the zero-dimensional material film 2 is etched.

[0106] It is understandable that when etching the zero-dimensional material film 2, the central wavelength of each optical channel will be obtained first, and the target thickness of the zero-dimensional material at the optical channel region corresponding to the optical channel can be determined based on the central wavelength of the optical channel. Then, based on the target thickness of the zero-dimensional material corresponding to the optical channel region, the zero-dimensional material film 2 is etched to form zero-dimensional materials with corresponding target thicknesses at different optical channel regions. This embodiment etches the zero-dimensional material film 2 based on the target thickness of the zero-dimensional material corresponding to each optical channel region, so that zero-dimensional materials with different thicknesses can be accurately formed at different optical channel regions.

[0107] It can be understood that based on the target thickness of the zero-dimensional material in each optical channel area, the number of etching times and / or etching depth corresponding to each optical channel area can be determined. By controlling the etching of the zero-dimensional material film 2 according to the number of etching times and / or etching depth, a zero-dimensional material of the corresponding target thickness can be accurately formed in each optical channel area.

[0108] It can be understood that zero-dimensional materials of different thicknesses correspond to different central wavelengths of optical channels, and thus the thickness of the zero-dimensional material can be determined according to the required central wavelength of the optical channel.

[0109] In one embodiment of the present application, etching the zero-dimensional material film 2 includes:

[0110] Based on the target thickness of the zero-dimensional material at each optical channel region, the zero-dimensional material film 2 at each optical channel region is etched in sequence.

[0111] It can be understood that when etching the zero-dimensional material film 2, according to the target thickness of the zero-dimensional material corresponding to one of the optical channel regions, the zero-dimensional material film 2 at the optical channel region is etched, and the zero-dimensional material film 2 at the optical channel region is etched to the target thickness, thereby completing the processing of the optical channel region, and a corresponding filter unit can be obtained at the optical channel region, and the filter unit is formed with an optical channel corresponding to the optical channel region. Similarly, according to the target thickness of the zero-dimensional material corresponding to other optical channel regions, the zero-dimensional material film 2 at other optical channel regions is etched in turn to obtain zero-dimensional materials of corresponding target thicknesses at other optical channel regions.

[0112] In one embodiment of the present application, the target thickness of the zero-dimensional material at each optical channel region is arranged in order from large to small as A1, A2, A3, ..., A n , etching the zero-dimensional material film 2, including:

[0113] Mask the optical channel area corresponding to the thickness of A1;

[0114] The zero-dimensional material film 2 is etched to A m Thickness, where 2≤m≤n

[0115] A m The optical channel area mask corresponding to the thickness, where m≤n-1;

[0116] Repeat the etching of the zero-dimensional material film 2 to A m Thickness step and pair A m The optical channel area mask step corresponding to the thickness is performed until A n The zero-dimensional material film 2 at the optical channel region corresponding to the thickness is etched to A n thickness.

[0117] It can be understood that the target thickness of the zero-dimensional material to be deposited at each optical channel region can be determined according to the central wavelength of the optical channel corresponding to each optical channel region, and the target thickness of the zero-dimensional material to be deposited at each optical channel region is arranged in order from large to small: A1, A2, A3, ... A n .

[0118] When etching the zero-dimensional material film 2, mask the optical channel area corresponding to the A1 thickness, i.e., the maximum thickness, and then etch the zero-dimensional material film 2 to A2 thickness. At this time, the etching of the zero-dimensional material film 2 at the optical channel area with the target thickness of A2 has been completed, i.e., the construction of the filter unit at the optical channel area with the target thickness of A2 has been completed, and the optical channel area corresponding to the A2 thickness is masked to prevent subsequent etching from affecting the optical channel area corresponding to the A2 thickness. By analogy, the etching from A2 to A2 is completed in sequence. m Construction of the filter unit at the optical channel area of ​​thickness.

[0119] It is understandable that after completing the m After etching the zero-dimensional material film 2 at the optical channel region corresponding to the thickness, there is no need to m The optical channel area corresponding to the thickness is masked.

[0120] It can be understood that before masking the optical channel area corresponding to the thickness of A1, it is determined whether the thickness of the zero-dimensional material film 2 at the optical channel area corresponding to the thickness of A1 is equal to A1. If the thickness of the zero-dimensional material film 2 at the optical channel area corresponding to the thickness of A1 is greater than A1, the zero-dimensional material film 2 is first etched to the thickness of A1. If the thickness of the zero-dimensional material film 2 at the optical channel area corresponding to the thickness of A1 is equal to A1, the optical channel area corresponding to the thickness of A1 is directly masked.

[0121] In one embodiment of the present application, a zero-dimensional material film 2 is deposited on the surface of a substrate 1, comprising:

[0122] obtaining a target thickness of the zero-dimensional material at a plurality of optical channel regions;

[0123] Determine a maximum value of target thicknesses of the zero-dimensional material at a plurality of optical channel regions as A;

[0124] A zero-dimensional material film 2 with a thickness of A is deposited on the surface of the substrate 1.

[0125] It can be understood that the target thickness of the zero-dimensional material required in each optical channel region is first obtained, the maximum thickness A is determined from the target thicknesses of all optical channel regions, and then a zero-dimensional material film 2 with a thickness of A is plated on the surface of the substrate 1. At this time, the thickness of the zero-dimensional material film 2 on the substrate 1 is the same as the target thickness of the optical channel region with the largest target thickness, indicating that the construction of the filter unit has been completed in the optical channel region with a target thickness of A, and there is no need to etch the optical channel region with a target thickness of A, which simplifies the process flow and improves production efficiency.

[0126] In one embodiment of the present application, etching the zero-dimensional material film 2 includes:

[0127] Mask the optical channel area with target thickness A;

[0128] The zero-dimensional material film 2 at the optical channel region where the target thickness is less than A is etched.

[0129] It can be understood that, since the thickness of the zero-dimensional material film 2 plated on the substrate 1 is A, there is no need to etch the optical channel region with a target thickness of A, and the optical channel region with a target thickness of A is directly masked to avoid the subsequent etching operation from affecting it. Then, the zero-dimensional material film 2 at the optical channel region with a target thickness less than A is etched, reducing the step of etching the optical channel region with a target thickness of A.

[0130] According to an embodiment of the second aspect of the present application, Figure 7 , the stacked zero-dimensional material filter structure includes:

[0131] A first filter layer 10, the first filter layer 10 includes a plurality of first filter structures;

[0132] The second filter layer 20 includes a zero-dimensional material film, the thickness of the zero-dimensional material film is between 0.1nm and 100nm, the zero-dimensional material film is arranged on one side of the first filter layer 10, and the zero-dimensional material film forms a plurality of second filter structures, and the plurality of second filter structures are arranged one by one opposite to the plurality of first filter structures, wherein the wavelength ranges of light allowed to pass through by the first filter structure and the corresponding second filter structure partially overlap, and the zero-dimensional material film is an element single substance film, an element compound film, or a mixture film.

[0133] According to the stacked zero-dimensional material filter structure of the present application, the zero-dimensional material film is disposed on the surface of the first filter layer 10 to form the second filter layer 20, and the second filter structure is stacked on the surface of the first filter structure, so that the first filter structure and the second filter structure can filter the light together. That is, the present application uses one of the first filter structure and the second filter structure to perform preliminary filtering on the light, and uses the other of the first filter structure and the second filter structure to perform secondary filtering on the light, so that the wavelength range of the obtained light is further narrowed, and double filtering of the light by the first filter layer 10 and the second filter layer 20 is achieved, and fine light separation is achieved, and a narrow band of purer light can be obtained, thereby improving the filtering effect. At the same time, since the thickness of a single layer of elemental simple substance and / or elemental compound is smaller than that of the dielectric film, compared with the stacked dielectric film filter structure in the related art, the overall thickness of the second filter layer 20 is reduced while ensuring that the thicknesses of the zero-dimensional materials of the multiple second filter structures are different, which can effectively reduce the thickness of the stacked zero-dimensional material filter structure, and the second filter layer 20 can be formed by depositing or plating the zero-dimensional material on the surface of the first filter layer 10, which simplifies the processing process of the stacked zero-dimensional material filter structure and improves production efficiency.

[0134] It can be understood that the thickness of the zero-dimensional material film is set between 0.1nm and 100nm, so that the zero-dimensional material film filter structure of the present application is obviously different from the dielectric film filter structure, and the thickness of the second filter structure of the present application will be smaller than the thickness of the dielectric film filter structure.

[0135] In one embodiment of the present application, Figure 7 The stacked zero-dimensional material filter structure includes at least one third filter layer 30, which is arranged on the side of the second filter layer 20 away from the first filter layer 10. The third filter layer 30 includes a plurality of third filter structures, and the plurality of third filter structures are arranged one by one opposite to the plurality of second filter structures. The first filter structure and the corresponding second filter structure are used to pass the optical signal in the first wavelength range, and the third filter structure opposite to the second filter structure is used to pass the optical signal in the second wavelength range, and the first wavelength range and the second wavelength range partially overlap.

[0136] It can be understood that the multiple first filter structures, the multiple second filter structures and the multiple third filter structures are arranged one by one relative to each other, so that the first filter structure, the second filter structure and the third filter structure are stacked together. When the light passes through the first filter structure and the second filter structure, the wavelength range of the light is a first range value, and then the light is incident on the third filter structure. The third filter structure can filter the light, and the third filter structure only allows light with a wavelength range of the second range to pass through. Then, the wavelength range of the light passing through the third filter structure is the overlapping range of the first range and the second range, and thus light with a narrower wavelength range can be obtained.

[0137] Exemplarily, the material of the first filter layer 10 is, for example, single element copper, and its thickness is, for example, 1 nm; the second filter layer 20 is, for example, single element silver, and its thickness is, for example, 4 nm; the third filter layer 30 is, for example, single element gold, and its thickness is, for example, 0.6 nm.

[0138] In one embodiment of the present application, the first filter structure and the second filter structure are made of the same material, and have different thicknesses, which ensure that the first filter structure and the second filter structure allow different wavelength ranges of light to pass through.

[0139] In one embodiment of the present application, the first light filtering structure and the second light filtering structure are made of different materials, and the first light filtering structure and the second light filtering structure have the same thickness.

[0140] It can be understood that the different materials ensure that the wavelength ranges of light allowed to pass through by the first filter structure and the second filter structure are different.

[0141] In one embodiment of the present application, the first filter structure and the second filter structure are made of different materials and have different thicknesses, so that the wavelength ranges of light allowed to pass through by the first filter structure and the second filter structure are different.

[0142] In one embodiment of the present application, the zero-dimensional material film is disposed on one side of the first filter layer 10 by deposition or plating.

[0143] It can be understood that the element single substance and / or element compound is disposed on the first filter layer 10 by deposition or plating to form the zero-dimensional material film 2, and the thickness of the zero-dimensional material film 2 at different first filter structures can be made different by controlling the number of deposition or plating at different first filter structures. Compared with the dielectric film filter structure in the related art, the present application simplifies the processing process and improves the production efficiency by arranging the element single substance and / or element compound at the optical channel area by deposition or plating.

[0144] In one embodiment of the present application, Figure 4 The first filter layer 10 is formed with a plurality of optical channels, and the first filter layer 10 includes:

[0145] A substrate 1, wherein a plurality of optical channel regions are provided on the surface of the substrate 1, and the plurality of optical channel regions correspond to the plurality of optical channels one by one;

[0146] A first filter structure is provided at each optical channel region. The thicknesses of the first filter structures are different, and the thickness of the first filter structures ranges from 0.1 nm to 100 nm.

[0147] Specifically, the first filtering structure is composed of a zero-dimensional material film, that is, a zero-dimensional material film 2 is provided in each optical channel area, and the thickness of the zero-dimensional material film 2 in multiple optical channel areas is different. The thickness of the zero-dimensional material film 2 is between 0.1nm and 100nm. The zero-dimensional material film 2 is an element single substance film or an element compound film or a mixture film.

[0148] According to the stacked zero-dimensional material filter structure of the present application, a zero-dimensional material film 2 is provided at the optical channel region of the substrate 1, and a first filter structure is constructed at the optical channel region using the zero-dimensional material film 2, and the thickness of the zero-dimensional material film 2 at multiple optical channel regions is different, and the center wavelength of the optical channel of the first filter structure formed by the zero-dimensional material film 2 of different thicknesses is also different, that is, different first filter structures are constructed using the zero-dimensional material film 2 at multiple optical channel regions, so that the stacked zero-dimensional material filter structure has multiple channels. The present application sets a zero-dimensional material film 2 on the surface of the substrate 1, and constructs the first filter structure using the zero-dimensional material film 2. Compared with the construction of the filter structure using the dielectric film in the related art, since the thickness of the single-layer element single substance and / or element compound will be smaller than the dielectric film, while ensuring that the thickness of the zero-dimensional material film 2 at multiple optical channel regions is different, the overall thickness of the first filter layer 10 can be effectively reduced, so that the thickness of the stacked zero-dimensional material filter structure will be smaller than the thickness of the filter structure in the related art.

[0149] It is understood that the mixture film includes at least one element and / or at least one element compound.

[0150] In one embodiment of the present application, the zero-dimensional material film 2 is disposed in the optical channel region by deposition or plating.

[0151] It can be understood that the element single substance and / or element compound is disposed in the optical channel region by deposition or plating to form the zero-dimensional material film 2, and the thickness of the zero-dimensional material film 2 in different optical channel regions can be made different by controlling the number of deposition or plating in different optical channel regions. And compared with the dielectric film filter structure in the related art, the present application simplifies the processing process of the first filter structure and improves the production efficiency by disposing the element single substance and / or element compound in the optical channel region by deposition or plating.

[0152] In one embodiment of the present application, Figure 5 The first filter layer 10 includes an R channel, a G channel and a B channel, and the thicknesses of the zero-dimensional material film 2 at the optical channel regions corresponding to the R channel, the G channel and the B channel are all different.

[0153] It can be understood that by constructing the filter units corresponding to the R channel, the G channel and the B channel using the zero-dimensional material film 2, the thickness of the filter units corresponding to the R channel, the G channel and the B channel can be effectively reduced.

[0154] Specifically, the first filter layer 10 includes at least two G channels, and the thickness of the zero-dimensional material film 2 at the optical channel regions corresponding to the two G channels is the same.

[0155] It can be understood that by using the stacked zero-dimensional material filter structure of this embodiment to form a display device, the thickness of the filter structure of the display device can be effectively reduced.

[0156] In one embodiment of the present application, the thickness of the zero-dimensional material film 2 in each optical channel region is different.

[0157] It can be understood that the thickness of the zero-dimensional material film 2 at each optical channel area is set to be different, so that the number of optical channels of the stacked zero-dimensional material filtering structure is the same as the number of optical channel areas, thereby ensuring the number of optical channels of the stacked zero-dimensional material filtering structure.

[0158] In one embodiment of the present application, multiple optical channel regions are distributed in sequence along the thickness of the zero-dimensional material film 2 from large to small.

[0159] It can be understood that when a zero-dimensional material film 2 is formed in multiple optical channel areas, since the thicknesses of the zero-dimensional material films 2 corresponding to the multiple optical channel areas are distributed in sequence from large to small, the zero-dimensional material films 2 can be arranged in sequence for the multiple optical channel areas in order of thickness, which is beneficial to the processing of the optical channel areas and improves production efficiency.

[0160] In one embodiment of the present application, the surface of the substrate 1 is provided with at least two rows and at least two columns of optical channel areas.

[0161] It can be understood that two or more rows of optical channel areas are provided on the surface of the substrate 1, and two or more columns of optical channel areas are provided, so that the surface of the substrate 1 is provided with at least four optical channel areas distributed in an array, and a zero-dimensional material film 2 of corresponding thickness can be provided at each optical channel area to form a corresponding first filtering structure, so that the stacked zero-dimensional material filtering structure is a multi-channel filtering structure.

[0162] In one embodiment of the present application, the thickness of the zero-dimensional material film 2 is 2 nm-15 nm.

[0163] It can be understood that the thickness of the zero-dimensional material film 2 is between 2nm and 15nm. The thickness of the zero-dimensional material film 2 in the area that does not pass through the optical channel may be different, but the overall thickness of the entire zero-dimensional material film 2 on the substrate 1 is between 2nm and 15nm. Compared with the filtering structure formed by stacking dielectric films in the related art, the thickness of the first filtering structure of the present application is only about one thousandth of its thickness.

[0164] In one embodiment of the present application, the zero-dimensional material films 2 at multiple optical channel regions are integrally formed.

[0165] It can be understood that the zero-dimensional material films 2 at different optical channel regions are integrally formed, which improves the overall stability of the first filter layer 10 .

[0166] In one embodiment of the present application, the element is, for example, one of gold, silver and copper.

[0167] In one embodiment of the present application, the thickness of the zero-dimensional material film 2 in the same optical channel region is the same.

[0168] It can be understood that the zero-dimensional material films 2 in the same optical channel region together constitute a first filtering structure, and setting the thickness of the zero-dimensional material films 2 in the same optical channel region to be the same ensures the stability of the optical performance of the first filtering structure.

[0169] According to an embodiment of the fourth aspect of the present application, the spectral chip includes the above-mentioned stacked zero-dimensional material filtering structure.

[0170] According to the spectrum chip of the present application, by using one of the first filter structure and the second filter structure to perform preliminary filtering on the light, and using the other of the first filter structure and the second filter structure to perform secondary filtering on the light, the wavelength range of the obtained light is further narrowed, and double filtering of the light by the first filter layer 10 and the second filter layer 20 is achieved, and fine spectrometry is achieved, and a narrow band of purer light can be obtained, thereby improving the filtering effect. At the same time, since the thickness of a single layer of elemental simple substance and / or elemental compound is smaller than that of a dielectric film, compared with the stacked dielectric film filter structure in the related art, while ensuring that the zero-dimensional material thicknesses of the multiple second filter structures are different, the overall thickness of the second filter layer 20 is reduced, and the thickness of the stacked zero-dimensional material filter structure can be effectively reduced. Moreover, the second filter layer 20 can be formed by depositing or plating the zero-dimensional material on the surface of the first filter layer 10, thereby simplifying the processing process of the stacked zero-dimensional material filter structure and improving production efficiency.

[0171] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A stacked zero-dimensional material filter structure, characterized in that: include: A first filter layer, wherein the first filter layer comprises a plurality of first filter structures; The second filter layer includes a zero-dimensional material film, the thickness of the zero-dimensional material film is between 0.1nm and 100nm, the zero-dimensional material film is arranged on one side of the first filter layer, the zero-dimensional material film forms a plurality of second filter structures, the plurality of second filter structures are arranged one by one opposite to the plurality of first filter structures, wherein the wavelength ranges of light allowed to pass through by the first filter structure and the corresponding second filter structure partially overlap, and the zero-dimensional material film is an element single substance film, an element compound film, or a mixture film.

2. The stacked zero-dimensional material filter structure according to claim 1, characterized in that: The stacked zero-dimensional material filtering structure includes at least one third filtering layer, and the third filtering layer is arranged on the side of the second filtering layer away from the first filtering layer. The third filtering layer includes a plurality of third filtering structures, and the plurality of third filtering structures are arranged one by one opposite to the plurality of second filtering structures. The first filtering structure and the corresponding second filtering structure are used to pass optical signals within a first wavelength range, and the third filtering structure opposite to the second filtering structure is used to pass optical signals within a second wavelength range, and the first wavelength range and the second wavelength range partially overlap.

3. The stacked zero-dimensional material filter structure according to claim 1, characterized in that: The first light filtering structure and the second light filtering structure are made of the same material, and have different thicknesses.

4. The stacked zero-dimensional material filter structure according to claim 1, characterized in that: The first light filtering structure and the second light filtering structure are made of different materials, and the first light filtering structure and the second light filtering structure have the same thickness.

5. The stacked zero-dimensional material filter structure according to claim 1, characterized in that: The first light filtering structure and the second light filtering structure have different materials and thicknesses.

6. The stacked zero-dimensional material filter structure according to any one of claims 1 to 5, characterized in that: The zero-dimensional material film is disposed on one side of the first filter layer by deposition or plating.

7. The stacked zero-dimensional material filter structure according to any one of claims 1 to 5, characterized in that: The first filter layer is formed with a plurality of optical channels, and the first filter layer comprises: A substrate, wherein a plurality of optical channel regions are provided on the surface of the substrate, and the plurality of optical channel regions correspond one to one to the plurality of optical channels; A first filter structure is provided at each of the optical channel regions. The thicknesses of the first filter structures are different, and the thickness of the first filter structures ranges from 0.1 nm to 100 nm.

8. The stacked zero-dimensional material filter structure according to claim 7, characterized in that: The zero-dimensional material film is disposed in the optical channel region by deposition or plating.

9. The stacked zero-dimensional material filter structure according to any one of claims 1 to 5, characterized in that: The thickness of the zero-dimensional material film is 2nm-15nm.

10. A spectral chip, characterized in that: It comprises the stacked zero-dimensional material filter structure as described in any one of claims 1 to 9.

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