Lamp tube and heating system

Abstract

The utility model provides a lamp tube and a heating system, the lamp tube comprises a shell and a lamp filament, the shell is divided into a first part and a second part along a separation line in the horizontal direction, the outer surface of the first part is provided with at least one layer of reflecting film, and the infrared light reflectivity of the reflecting film is not lower than 95%. The heating system uses a lamp tube group formed by the lamp tubes and is used for heating wafers. According to the lamp tube, the heating energy efficiency can be improved, the temperature rising speed of a heating system is high, temperature control is uniform, the RTP annealing efficiency can be improved, and cost is reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and more particularly to a rapid thermal processing annealing device, and more particularly to a lamp tube and a heating system. Background Art

[0002] In the process of integrated circuit manufacturing, RTP (Rapid Thermal Processing) annealing process is a very important process, which can be used for activating ion implantation impurities, making high-quality SiO2 film layers, metal silicide formation and other processes. The rapid heating ability of RTP annealing process is very critical. At the same time, RTP annealing process requires that the temperature distribution of the entire wafer surface is uniform during the heating process. Traditional RTP annealing equipment generally uses lamp tube radiation heat source to heat the wafer monolithically. At the same time, the energy of the light is irradiated on the gold-plated inner wall of the heating cavity, and the wafer is heated by diffuse reflection of the gold-plated layer on the inner wall. This heating method is relatively expensive; there will be energy loss when the light is irradiated on the surface of the metal cavity, and the light source utilization rate is low; considering that the wafer will be affected by factors such as the field of view factor of the lamp group, gas convection and heat conduction during the heating process, these factors will cause the temperature of the edge of the wafer to be lower than the center temperature.

[0003] Therefore, a heating system is needed to solve the problems of high cost, energy loss and low light source utilization of the heating system in the prior art. Utility Model Content

[0004] An embodiment of the present application provides a lamp tube, comprising a shell and a filament, wherein the shell is divided into a first part and a second part along a horizontal dividing line, wherein a reflective film is arranged on the outer surface of the first part, the reflective film is at least one layer, and the reflectivity of the reflective film to infrared light is not less than 95% of the lamp tube.

[0005] In some embodiments, the cross-sectional shape of the first portion is parabolic, the cross-sectional shape of the second portion is semicircular, and the shell opening of the first portion and the shell opening of the second portion are completely butted against each other.

[0006] In some embodiments, the filament is a cylindrical spiral, the circle of the cylindrical spiral cross section of the filament is located above the dividing line of the shell and tangent to the dividing line, and the center of the cylindrical spiral cross section of the filament is located at the focus of the parabola.

[0007] In some embodiments, the diameter of the cylindrical spiral cross-section of the filament is d, the diameter of the junction between the first portion and the second portion is a, and 1.1d≤a≤3d.

[0008] In some embodiments, the reflective film material includes a transparent conductive film, a multi-layer dielectric interference film, or a multi-layer dielectric metal interference film.

[0009] A heating system, used for rapid thermal processing annealing equipment, comprises a lamp tube group, wherein the lamp tube group is composed of a plurality of lamp tubes described in any one of the above items, and is used for heating a wafer.

[0010] In some embodiments, the heating system also includes: a first cavity, used to accommodate the wafer, including a top plate and a bottom plate respectively arranged opposite to the first surface and the second surface of the wafer, the top plate and the bottom plate respectively include a smooth outer surface and a rough inner surface, the outer surface makes the transmittance of infrared light not less than 90%, and the roughness Ra of the inner surface is greater than 0.2nm, the lamp tube group is respectively arranged on the outer side of the top plate and the bottom plate, and the second part of the lamp tube is close to the first cavity; a second cavity, the first cavity and the lamp tube group are arranged in the second cavity.

[0011] In some embodiments, the lamp tubes of the lamp tube group are arranged parallel to the plane where the wafer is located, and the multiple lamp tubes in the lamp tube group outside the top plate are arranged in an orthogonal direction to the multiple lamp tubes in the lamp tube group outside the bottom plate.

[0012] In some embodiments, a bracket is disposed in the first cavity for supporting the wafer.

[0013] In some embodiments, the top plate, the bottom plate, and the bracket are made of quartz, and the second cavity is made of metal.

[0014] In some embodiments, anti-reflection films are respectively disposed on the outer surfaces of the top plate and the bottom plate, the anti-reflection films are resistant to high temperatures of at least 300 degrees Celsius, and the anti-reflection films make the transmittance of the top plate and the bottom plate to infrared light exceed 99%.

[0015] In some embodiments, the number of layers of the antireflection film is at least one.

[0016] In some embodiments, the lamp tubes of the lamp tube group are arranged parallel to the plane where the wafer is located.

[0017] The lamp tube of the present application includes a shell and a filament, which is used as a heating source. The shell has a parabolic first part and a semicircular second part. The first part is coated with a reflective film. The infrared light radiated by the filament is reflected by the reflective film to the surface of the wafer to be heated, which reduces the amount of electrical energy required to maintain the filament at a specified temperature and improves the efficiency of the lamp tube. The outer surface of the top plate and the bottom plate of the first cavity of the heating system of the present application is smooth, and the inner surface is rough, so that the first cavity increases the diffuse scattering function, so that the infrared light emitted by the lamp tube group passes through the first cavity to reach the surface of the heated wafer and is evenly distributed. The uniform distribution of light on the surface of the heated wafer is achieved by reflecting light, so that the wafer is evenly heated, which can reduce energy loss, improve the low utilization rate of the light source, and reduce the cost of the heating system. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.

[0019] in:

[0020] Figure 1 It is a schematic diagram of a heating system;

[0021] Figure 2 yes Figure 1 A schematic diagram of the heating light path of the heating system shown;

[0022] Figure 3 is a schematic diagram of a single lamp tube according to some embodiments of the present application;

[0023] Figure 4 is a schematic diagram of heating light according to some embodiments of the present application;

[0024] Figure 5 is a schematic diagram of a heating system according to some embodiments of the present application;

[0025] Figure 6 is a schematic diagram of a first cavity according to some embodiments of the present application;

[0026] Figure 7 The first part of the lamp is shown in several states according to some embodiments of the present application.

[0027] intention;

[0028] Figure 8 It is a schematic diagram comparing the heating effects of the heating system before improvement and the heating system of the present application. DETAILED DESCRIPTION

[0029] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.

[0030] like Figure 1 and Figure 2 The figure shows a schematic diagram of a heating system of a rapid thermal processing annealing device and Figure 1 Schematic diagram of the heating light path of the heating system shown. The heating system includes an internal quartz cavity 11 and an external metal cavity 12. Lamp tube groups (for example, a lamp tube group composed of multiple lamp tubes 13) are arranged above and below the quartz cavity 11, and a quartz support rack 15 for placing a wafer 14 is arranged inside the quartz cavity 11. The upper and lower lamp tube groups are used to quickly heat the wafer 14 located in the middle of the quartz cavity 11 to achieve a rapid temperature increase. The inner surface of the metal cavity 12 is plated with a gold-plated layer 121, and the surface of the gold-plated layer 121 is subjected to an appropriate roughening process to ensure the reflection of light, randomize the light path, and make the radiation of light evenly distributed on the entire wafer 14. Reference Figure 2 The lamp tube 13 includes a lamp tube 131 and a filament 132. The cross-sections of the lamp tube 131 and the filament 132 are both circular, and the lamp tubes 131 and the lamp tubes 131 are concentric. The cost of this heating system is high, and the light of the lamp tube 13 irradiates the surface of the metal cavity 12, which will cause energy loss and low light source utilization.

[0031] Therefore, the present application embodiment provides Figure 3 A lamp tube 233 is shown, and reference is made to Figure 4In some embodiments, each lamp tube 233 includes a shell 2331 and a filament 2332. The shell 2331 is divided into a first part 23311 and a second part 23312 along a dividing line 2333 in the horizontal direction. A reflective film 23313 is provided on the outer surface of the first part 23311. The reflective film 23313 is at least one layer, and the reflective rate of the reflective film 23313 to infrared light is not less than 95%. The reflective film 23313 is a multi-layer film designed to allow visible light to pass through but reflect the emitted infrared light. The outer surface of the first part 23311 is coated or plated with a reflective film 23313. The reflective film 23313 is required to be resistant to high temperatures of 300°C and have an infrared light reflectivity of more than 95%. The infrared light radiated by the filament 2332 is reflected by the reflective film 23313 to the surface of the wafer 20 to be heated, reducing the electrical energy required to maintain the filament 2332 at a specified temperature, thereby improving the efficiency of the lamp tube 233. In some embodiments, the shell 2331 of the lamp tube 233 is made of quartz glass, the material of the reflective film 23313 is silver, the temperature resistance range reaches 600° C.-800° C., and the reflectivity reaches 95%-99%.

[0032] In some embodiments, the material of the reflective film 23313 may also include Ta2O5, SiO2, and TiO2. It should be noted that the material of the reflective film 23313 is not limited to the listed materials. In some embodiments, the reflective film 23313 may be made of materials such as transparent conductive film, multilayer dielectric interference film, and multilayer dielectric metal interference film. The material of the reflective film 23313 is required to be able to withstand high temperatures of 300°C and above, and the infrared light reflectivity is 95% and above. The reflective film materials include transparent conductive film, multilayer dielectric interference film, and multilayer dielectric metal interference film. The number of layers of the reflective film 23313 is not limited, and the specific number of layers can be set according to different reflective film materials to meet process requirements. In some embodiments, the reflective film materials include transparent conductive film, multilayer dielectric interference film, and multilayer dielectric metal interference film. Specifically, the material of the reflective film 23313 may include a combination of these materials. The multilayer reflective film combination may be affected by the following factors, such as the film thickness of the reflective film, shear stress, interfacial tension between polymer layers, interfacial adhesion between polymer melt and channel wall, and various combinations of these factors. Taking the multilayer dielectric metal interference film as the material of the reflective film 23313 as an example, the multilayer metal dielectric interference film may include a metal layer and a dielectric layer. The dielectric layer may include several layers of reflective films, and the several layers of reflective films may be a combination of a low refractive index material reflective film and a high refractive index material reflective film. It should be noted that the high refractive index material and the low refractive index material are only used to indicate the relative relationship between the refractive index of the two types of refractive index materials.

[0033] In some embodiments, the cross-sectional shape of the first portion 2331 of the lamp housing is parabolic, the cross-sectional shape of the second portion 2332 is semicircular, and the housing opening of the first portion 2331 and the housing opening of the second portion 2332 are completely butted against each other. Figure 3 The special-shaped lamp tube shown in the figure has a first portion 23311 whose cross section is set to be a parabola, which can make the reflected infrared light parallel light.

[0034] In some embodiments, the filament 2332 is in a cylindrical spiral shape, the circular shape of the cylindrical spiral cross section of the filament 2332 is located above the dividing line of the housing 2331 and is tangent to the dividing line 2333, and the center of the cylindrical spiral cross section of the filament 2332 is located at the focus of the parabola. The center of the cross section of the filament 2332 coincides with the focus of the parabola of the first part of the housing, so that the light emitted by the filament 2332 is reflected by the inner wall of the first part 23311 of the housing to form a parallel light beam.

[0035] refer to Figure 4 In some embodiments, the diameter of the cylindrical spiral cross-section of the filament 2332 is d, and the diameter of the joint between the first part 23311 and the second part 23312 is a, 1.1d≤a≤3d. The diameter of the joint between the parabola of the first part 23311 of the shell and the second part 23312 is a, 1.1d≤a≤3d. Because the reflectivity of the reflective film 23313 depends to a large extent on the angle and distance at which the infrared light is incident on the reflective film 23313, the effective range of infrared light reflection can be obtained by setting the range of the diameter a of the joint between the parabola of the first part 2331 and the semicircular of the second part 23312. Among them, Figure 4 In (a), the outer surface of the filament 2332 is tangent to the inner surface of the first part 23311. This is an extreme case, so the diameter a of the joint is set to be slightly larger than the diameter d of the filament 2332 (i.e. ≥1.1d) to leave a gap between the outer surface of the filament 2332 and the inner surface of the first part 23311 for infrared light to pass through. Figure 4 (c) is the state when a≤3d, Figure 4 (b) is the diameter of the joint and the length is between Figure 4 (a) and Figure 4 The state between (c) Figure 4 (b) and Figure 4 The size of the lamp tube 233 is not limited and can be set according to actual production requirements.

[0036] The present application also provides a heating system 100, referring to Figure 5 and Figure 6As shown, in some embodiments, the embodiment of the present application provides a heating system 100 for rapid thermal processing annealing equipment, including a lamp tube group 23, the lamp tube group 23 is composed of a plurality of lamp tubes 233, and is used to heat the wafer. The heating system 100 also includes: a first cavity 21 and a second cavity 22. The first cavity 21 is used to accommodate the wafer 20, and includes a top plate 211 and a bottom plate 212 respectively arranged opposite to the first surface 201 and the second surface 202 of the wafer 20, the top plate 211 and the bottom plate 212 respectively include a smooth outer surface and a rough inner surface, the outer surface makes the transmittance of infrared light not less than 90%, and the roughness Ra of the inner surface is greater than 0.2nm, and the second part 23312 of the lamp tube is close to the first cavity 21; the lamp tube group is respectively arranged on the outer side of the top plate 211 and the bottom plate 212; the first cavity 21 and the lamp tube group 23 are arranged in the second cavity 22.

[0037] Specifically, the top plate 211 of the first cavity 21 has a smooth outer surface 2111 and a rough inner surface 2112, and the bottom plate 212 has a smooth outer surface 2121 and a rough inner surface 2122. The smooth outer surface allows the infrared light emitted by the lamp tube group 23 to better penetrate the top plate 211 and the bottom plate 212 to reach the surface of the wafer 20. The RTP annealing equipment is provided with a temperature measurement system (not shown), which adopts a non-contact measurement method of an infrared sensor. In some embodiments, the roughness Ra of the inner surface 2122 is set at 0.2nm to 0.3nm, which will not affect the temperature measurement accuracy and promote the uniformity of the surface temperature of the wafer 20. A lamp group 231 composed of lamp tubes 233 is arranged on the outside of the top plate 211 of the first cavity 21, and a lamp group 232 composed of lamp tubes 233 is arranged on the outside of the bottom plate 212. The second part 23312 of the lamp tube 233 is close to the first cavity 21 relative to the first part 23311. The shape, material and size of the first cavity 21 can be selected and adjusted as needed, as long as they can meet the heat treatment requirements of the heated wafer 20. The top plate 211 and the bottom plate 212 of the first cavity of the heating system have smooth outer surfaces and rough inner surfaces, so that the first cavity 21 has a diffuse scattering function, ensuring that the infrared light emitted by the lamp group passes through the first cavity 21 and reaches the surface of the wafer 20 with uniform distribution. The uniform distribution of light on the surface of the wafer 20 is achieved by light reflection, so that the wafer 20 is evenly heated.

[0038] In some embodiments, a bracket 24 is provided in the first cavity 21 for carrying the wafer 20. The top plate 211, the bottom plate 212 and the bracket 24 are made of quartz, and the second cavity 22 is made of metal. The first cavity 21 is made of quartz, and the transmittance of infrared light is up to 92%. The structure and size of the bracket 24 can be selected and adjusted according to the production process requirements of the wafer 20 to be heated, as long as it can meet the requirements of placing the wafer 20 and performing heat treatment.

[0039] like Figure 6 As shown, in some embodiments, an anti-reflection film 213 is respectively provided on the outer surface of the top plate 211 and the bottom plate 212, and the anti-reflection film 213 is resistant to a high temperature of at least 300 degrees Celsius, and the anti-reflection film 213 makes the infrared light transmittance of the top plate 211 and the bottom plate 212 exceed 99%. In view of the problem that the temperature at the edge of the wafer 20 is lower than the center temperature, the top plate 211 and the bottom plate 212 of the first cavity 21 are provided with a smooth outer surface and a rough inner surface, which increases the diffuse scattering function and ensures that the light reaching the surface of the wafer 20 through the first cavity 21 is evenly distributed. At the same time, a layer of anti-reflection film 213 is plated (or coated) on the outer surface 2111 of the top plate 211 and the outer surface 2122 of the bottom plate 212, respectively, which can further improve the utilization rate of the heating light source. Taking the case where the material of the first cavity 21 is quartz, the transmittance of the first cavity 21 to infrared light is up to 92% without the anti-reflection film 213, and the transmittance of the first cavity 21 to infrared light is up to 99.98% after the anti-reflection film 213 is provided. The material of the anti-reflection film 213 is a combination of one or more materials such as titanium dioxide (TiO2), zinc sulfide (ZnS), ytterbium fluoride (YbF3), silicon dioxide (SiO2), barium fluoride (BaF2), zinc selenide (ZnSe), etc., and the high temperature resistance range is 300°C to 1000°C. It should be noted that the anti-reflection film 213 is not limited to the materials listed above.

[0040] In some embodiments, the number of layers of the anti-reflection film 213 is at least one. In certain cases, the more layers of the anti-reflection film, the better the anti-reflection effect. In some embodiments, a combination of anti-reflection films with different refractive indices can be used, for example, a multilayer anti-reflection film with high and low refractive indices. The number of layers of the anti-reflection film 213 can be set according to the actual production process requirements. The key to obtaining a better wide-band anti-reflection effect is to select reasonable structural parameters so that it can form a stable equivalent refractive index system with a gradual distribution from the incident medium to the substrate material. At this time, it can be equivalent to a multilayer thin film system with a slowly gradually distributed refractive index.

[0041] In some embodiments, the lamp tubes 233 of the lamp tube group outside the top plate 211 and the bottom plate 212 are arranged in two rows, the lamp tubes 233 of the lamp tube group are arranged parallel to the plane where the wafer 20 is located, and the multiple lamp tubes in the lamp tube group outside the top plate 211 are arranged in an orthogonal direction to the multiple lamp tubes in the lamp tube group outside the bottom plate 212. The lamp tube group 23 includes a first lamp tube group 231 and a second lamp tube group 232, and the first lamp tube group 231 and the second lamp tube group 232 are respectively composed of a plurality of lamp tubes 233. The lamp tube 233 can be a halogen lamp. The first lamp tube group 231 is arranged above the outside of the top plate 211, and the second lamp tube group 232 is arranged below the outside of the bottom plate 212. The lamp tubes of the first lamp tube group 231 and the lamp tubes of the second lamp tube group 232 are arranged orthogonally to each other and parallel to the surface of the wafer 20, so that the light irradiated on the wafer 20 can be more uniform.

[0042] Figure 7 As can be seen, the filament 2332 is closer to the first part 23311 of the shell than the second part 23312 of the shell. A part of the infrared light radiated by the filament 2332 directly irradiates the surface of the wafer 20, and the other part is reflected by the parabolic reflective layer 23313 and irradiates the surface of the wafer 20 in parallel. Since the inner wall reflection surface of the first part 23311 is a parabola, when the light source (i.e., the center of the filament 2332) is located at the focus of the parabola, the emitted light is reflected by the inner wall reflection surface of the first part 23311 to form a parallel light beam. Therefore, a better reflection effect can be achieved without gold plating on the inner surface of the second cavity 22, which improves the production efficiency of the annealing process and reduces the production cost.

[0043] Figure 8 : is a schematic diagram comparing the heating effects before improvement and in this application. Figure 8 (a) is the heating effect before improvement. Figure 8 Middle (b) is the heating effect of this application. Figure 8 (a) shows that the temperature control of the surface of the wafer 20 to be heated is not uniform before the improvement. Figure 8 As shown in (b), after improvement according to the embodiment of the present application, the temperature of the surface of the wafer 20 to be heated is evenly controlled.

[0044] The lamp tube 233 of the present application is configured with a shell 2331 as a parabolic first part 23311 and a semicircular second part 23312, and a reflective film 23313 is coated on the outside of the first part 23311, so that the infrared light radiated by the filament 2332 is reflected by the reflective film 23313 to the surface of the wafer to be heated, thereby greatly improving the heating efficiency of the lamp tube 233. The heating system of the present application uses the aforementioned lamp tube as a heating source, and by respectively configuring a smooth outer surface and a rough inner surface on the top plate 211 and the bottom plate 212 of the first cavity 21 of the heating system, and respectively adding an anti-reflective film 213 on the outer surfaces of the top plate 211 and the bottom plate 212, the technical effect of uniformly controlling the temperature of the surface of the wafer 20 to be heated is achieved.

[0045] The beneficial effects that may be brought about by the embodiments of the present application include but are not limited to: using a special lamp tube shape to achieve a reflection effect, setting a reflective film on the first part of the lamp tube so that part of the infrared light radiated by the filament is directly reflected to the surface of the wafer to be heated. Setting anti-reflection films on the top plate and the bottom plate of the first cavity respectively improves the utilization rate of the light source and the uniformity of the wafer surface temperature, and by changing the surface structure of the top plate and the bottom plate of the first cavity of the heating system, the production efficiency of the RTP annealing process is improved and the production cost is reduced.

[0046] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.

[0047] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.

[0048] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.

[0049] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.

[0050] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

[0051] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0052] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0053] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in this application.

Claims

1. A lamp tube, characterized in that: It comprises a shell and a filament, wherein the shell is divided into a first part and a second part along a horizontal dividing line, wherein a reflective film is arranged on the outer surface of the first part, the reflective film is at least one layer, and the reflectivity of the reflective film to infrared light is not less than 95%.

2. The lamp tube according to claim 1, characterized in that: The cross-sectional shape of the first part is parabolic, the cross-sectional shape of the second part is semicircular, and the shell opening of the first part and the shell opening of the second part are completely butted against each other.

3. The lamp tube according to claim 2, characterized in that: The filament is in a cylindrical spiral shape, the circle of the cylindrical spiral cross section of the filament is located above the dividing line of the shell and tangent to the dividing line, and the center of the cylindrical spiral cross section of the filament is located at the focus of the parabola.

4. The lamp tube according to claim 3, characterized in that: The diameter of the cylindrical spiral cross section of the filament is d, the diameter of the junction between the first part and the second part is a, 1.1d≤a≤3d.

5. The lamp tube according to claim 1, characterized in that: The reflective film material is a transparent conductive film, a multi-layer dielectric interference film or a multi-layer dielectric metal interference film.

6. A heating system for rapid thermal processing annealing equipment, characterized in that: The invention comprises a lamp tube group, wherein the lamp tube group is composed of a plurality of lamp tubes according to any one of claims 1 to 5 and is used for heating a wafer.

7. The heating system according to claim 6, characterized in that The system further comprises: A first cavity is used to accommodate the wafer, comprising a top plate and a bottom plate respectively arranged opposite to the first surface and the second surface of the wafer, the top plate and the bottom plate respectively comprising a smooth outer surface and a rough inner surface, the outer surface makes the transmittance of infrared light not less than 90%, and the roughness Ra of the inner surface is greater than 0.2nm, the lamp tube group is respectively arranged on the outer side of the top plate and the bottom plate, and the second part of the lamp tube is close to the first cavity; A second cavity, wherein the first cavity and the lamp tube group are arranged in the second cavity.

8. The heating system according to claim 7, characterized in that: The lamp tubes of the lamp tube group are arranged parallel to the plane where the wafer is located, and the multiple lamp tubes in the lamp tube group outside the top plate are arranged in an orthogonal direction to the multiple lamp tubes in the lamp tube group outside the bottom plate.

9. The heating system according to claim 7, characterized in that: A bracket is arranged in the first cavity for carrying the wafer.

10. The heating system according to claim 9, characterized in that The top plate, the bottom plate and the bracket are made of quartz, and the second cavity is made of metal.

11. The heating system according to claim 7, characterized in that: Anti-reflection films are respectively arranged on the outer surfaces of the top plate and the bottom plate. The anti-reflection films can withstand a high temperature of at least 300 degrees Celsius, and the anti-reflection films make the infrared light transmittance of the top plate and the bottom plate exceed 99%.

12. The heating system according to claim 11, characterized in that The number of layers of the antireflection film is at least one.

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