Double-thermocouple temperature detection and control structure

Abstract

The utility model relates to the technical field of semiconductor annealing, and discloses a double-thermocouple temperature detection and control structure, which comprises a vacuum cavity, mounting bases are fixedly mounted on two sides of the bottom of the vacuum cavity, a feeding device is arranged on the right side of the vacuum cavity, and a detection device is arranged on the left side of each mounting base. According to the structure for detecting and controlling the temperature through the double thermocouples, the inner cavity of the vacuum cavity is heated through the detection device, then the silicon wafer is annealed, the silicon wafer is conveyed into the vacuum cavity through the feeding device to be annealed, the vacuum cavity door is installed and limited through the guide rod, and the temperature of the vacuum cavity door is controlled. The sliding of the vacuum cavity door is facilitated, the silicon wafer is placed through the arrangement of the quartz substrate frame, the silicon wafer is conveniently conveyed into the vacuum cavity, the temperature is detected through the arrangement of the thermocouple, the temperature calibration is facilitated, and the silicon wafer is heated and annealed.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor annealing, in particular to a structure for double thermocouple detection and temperature control. Background Art

[0002] Semiconductor materials and devices require a variety of process treatments during the production process, and rapid annealing is one of the common processes in the semiconductor front-end process.

[0003] At present, rapid annealing furnaces mostly use tungsten-halogen lamp heating. This heating method is to quickly raise the tungsten-halogen lamp to a high temperature, and then perform a thermal annealing process on the silicon wafer. However, the tungsten-halogen lamp is often a certain distance away from the surface of the silicon wafer, and the temperature of the silicon wafer surface is difficult to control accurately. There are certain problems with the annealing effect and efficiency, and the annealing of the silicon wafer may not meet the requirements.

[0004] In order to solve the above problems, we made improvements and proposed a structure with double thermocouple detection and temperature control. Utility Model Content

[0005] The purpose of the utility model is to provide a structure for detecting and controlling temperature with double thermocouples to solve the problems raised in the above background technology.

[0006] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0007] A double thermocouple detection and temperature control structure, comprising a vacuum chamber, mounting bases are fixedly mounted on both sides of the bottom of the vacuum chamber, a feeding device is arranged on the right side of the vacuum chamber, and a detection device is arranged on the left side of the mounting base;

[0008] The feeding device includes two guide rods inserted into the vacuum chamber, a vacuum chamber door fixedly installed on the right side of the guide rods, a quartz substrate rack fixedly installed on the left side of the vacuum chamber door, and four thermocouples arranged on the top of the quartz substrate rack. The quartz substrate rack penetrates into the interior of the vacuum chamber.

[0009] As a further solution of the utility model: two locking cylinders are fixedly installed on the right side of the vacuum chamber, and the output ends of the locking cylinders are rotatably connected to the clamping rods through bearings.

[0010] As a further solution of the utility model: a thermocouple sealing assembly is arranged on the right side of the vacuum chamber door, and the thermocouple passes through the vacuum chamber door through the thermocouple sealing assembly and extends to the right side of the vacuum chamber door.

[0011] As a further solution of the utility model: a handle is fixedly installed on the right side of the vacuum chamber door, and the handle is located at the bottom of the thermocouple sealing assembly.

[0012] As a further solution of the utility model: the detection device includes a mounting plate fixedly installed on the left side of the vacuum chamber by bolts, a quartz sleeve inserted into the mounting plate, a halogen tungsten lamp arranged inside the quartz sleeve, and an armored thermocouple arranged inside the quartz sleeve, and the armored thermocouple is located below the halogen tungsten lamp.

[0013] As a further solution of the utility model: an upper quartz partition is fixedly installed in the inner cavity of the vacuum chamber, and the top of the upper quartz partition is in contact with the bottom of the quartz sleeve.

[0014] As a further solution of the utility model: a protective cover is fixedly installed on the right side of the mounting plate, and the halogen tungsten lamp tube is inserted and arranged inside the protective cover.

[0015] As a further solution of the utility model: the outer side of the quartz sleeve is provided with a sealing component, the sealing component penetrates into the interior of the mounting plate, the outer side of the sealing component is provided with a fixing component, and the sealing component is fixedly connected to the quartz sleeve through the fixing component.

[0016] Compared with the prior art, the beneficial effects of the utility model are:

[0017] 1. The utility model realizes installation and fixing of the vacuum chamber by setting the installation base, annealing of the silicon wafer by setting the vacuum chamber, heating of the inner cavity of the vacuum chamber by setting the detection device, and further annealing of the silicon wafer, and sending the silicon wafer to the inside of the vacuum chamber for annealing by setting the feeding device, and installation and limiting of the vacuum chamber door by setting the guide rod to facilitate the sliding of the vacuum chamber door, placing the silicon wafer by setting the quartz substrate rack to facilitate sending the silicon wafer to the inside of the vacuum chamber, and temperature detection by setting the thermocouple to facilitate temperature calibration and realize heating and annealing of the silicon wafer.

[0018] 2. The utility model realizes installation of the quartz sleeve by setting the installation plate, and at the same time realizes sealing of the left side of the vacuum chamber, realizes installation of the upper quartz partition by setting the quartz sleeve, realizes accommodation of the halogen tungsten lamp and the armored thermocouple by setting the quartz sleeve, realizes heating of the inner cavity of the vacuum chamber by setting the halogen tungsten lamp, realizes monitoring of the temperature inside the vacuum chamber and controlling the temperature of the halogen tungsten lamp by the cooperation between the armored thermocouple and the thermocouple, so that the temperature can reach the required level and the silicon wafer can be annealed quickly. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of a partial cross-section of a structure for detecting and controlling temperature with double thermocouples;

[0020] Figure 2A schematic diagram of a top view of a structure for detecting and controlling temperature with double thermocouples;

[0021] Figure 3 This is a schematic diagram of the equiaxial cross-section structure of a structure with double thermocouples for detecting and controlling temperature.

[0022] In the figure: 1. vacuum chamber; 2. feeding device; 201. vacuum chamber door; 202. thermocouple sealing assembly; 203. thermocouple; 204. handle; 205. quartz substrate rack; 206. locking cylinder; 207. guide rod; 208. clamping rod; 3. detection device; 301. upper quartz partition; 302. fixing assembly; 303. sealing assembly; 304. halogen tungsten lamp; 305. armored thermocouple; 306. quartz sleeve; 307. protective cover; 308. mounting plate; 4. mounting base. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the implementation mode of the utility model clearer, the technical solution in the implementation mode of the utility model will be clearly and completely described below in conjunction with the drawings in the implementation mode of the utility model. Obviously, the implementation mode described is a part of the implementation mode of the utility model, not all the implementation modes. Based on the implementation mode of the utility model, all other implementation modes obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0024] Example

[0025] See also Figure 1 , 2 and 3, a structure for detecting and controlling temperature with double thermocouples, comprising a vacuum chamber 1, mounting bases 4 are fixedly mounted on both sides of the bottom of the vacuum chamber 1, a feeding device 2 is arranged on the right side of the vacuum chamber 1, and a detection device 3 is arranged on the left side of the mounting base 4;

[0026] The feeding device 2 includes two guide rods 207 inserted into the inside of the vacuum chamber 1, a vacuum chamber door 201 fixedly installed on the right side of the guide rods 207, a quartz substrate rack 205 fixedly installed on the left side of the vacuum chamber door 201, and four thermocouples 203 arranged on the top of the quartz substrate rack 205. The quartz substrate rack 205 penetrates into the interior of the vacuum chamber 1.

[0027] Two locking cylinders 206 are fixedly installed on the right side of the vacuum chamber 1. The output end of the locking cylinder 206 is rotatably connected to a clamping rod 208 through a bearing. The vacuum chamber door 201 is pulled through the cooperation between the locking cylinder 206 and the clamping rod 208 to achieve a sealed connection between the vacuum chamber door 201 and the right side of the vacuum chamber 1, thereby achieving a sealed connection between the feeding device 2 and the vacuum chamber 1 to facilitate heating and annealing of the silicon wafer.

[0028] A thermocouple sealing assembly 202 is provided on the right side of the vacuum chamber door 201. The thermocouple 203 passes through the vacuum chamber door 201 through the thermocouple sealing assembly 202 and extends to the right side of the vacuum chamber door 201. The sealing between the thermocouple 203 and the vacuum chamber door 201 is achieved by the setting of the thermocouple sealing assembly 202. A handle 204 is fixedly installed on the right side of the vacuum chamber door 201. The handle 204 is located at the bottom of the thermocouple sealing assembly 202. The setting of the handle 204 facilitates the pulling of the vacuum chamber door 201, and facilitates the withdrawal of the guide rod 207 from the inside of the vacuum chamber 1 to facilitate the removal of the annealed silicon wafer.

[0029] See also Figure 1 , 2 3, a double thermocouple detection and control temperature structure, the detection device 3 includes a mounting plate 308 fixedly mounted on the left side of the vacuum chamber 1 by bolts, a quartz sleeve 306 inserted in the mounting plate 308, a halogen tungsten lamp 304 arranged in the quartz sleeve 306, and an armored thermocouple 305 arranged in the quartz sleeve 306. The armored thermocouple 305 is located below the halogen tungsten lamp 304. The quartz sleeve 306 is installed by the installation of the mounting plate 308, and the left side of the vacuum chamber 1 is controlled at the same time. The side is sealed, the upper quartz partition 301 is installed through the quartz sleeve 306, the halogen tungsten lamp 304 and the armored thermocouple 305 are accommodated through the quartz sleeve 306, the inner cavity of the vacuum chamber 1 is heated through the halogen tungsten lamp 304, and the temperature inside the vacuum chamber 1 is monitored and the temperature of the halogen tungsten lamp 304 is controlled through the cooperation between the armored thermocouple 305 and the thermocouple 203, so that the temperature can reach the required temperature and the silicon wafer can be annealed quickly.

[0030] An upper quartz partition 301 is fixedly installed in the inner cavity of the vacuum chamber 1, and the top of the upper quartz partition 301 contacts the bottom of the quartz sleeve 306. The upper quartz partition 301 is provided to support and block the quartz sleeve 306. A protective cover 307 is fixedly installed on the right side of the mounting plate 308. The halogen tungsten lamp tube 304 is inserted inside the protective cover 307. The protective cover 307 is provided to install and fix the halogen tungsten lamp tube 304 and the left side of the armored thermocouple 305, and protect the halogen tungsten lamp tube 304 and the armored thermocouple 305 at the same time.

[0031] The outer side of the quartz sleeve 306 is provided with a sealing component 303, and the sealing component 303 extends into the interior of the mounting plate 308. The outer side of the sealing component 303 is provided with a fixing component 302, and the sealing component 303 is fixedly connected to the quartz sleeve 306 through the fixing component 302. The connection between the halogen tungsten lamp tube 304 and the armored thermocouple 305 relative to the mounting plate 308 is achieved through the cooperation between the fixing component 302 and the sealing component 303, and at the same time, the sealing between the halogen tungsten lamp tube 304 and the armored thermocouple 305 relative to the mounting plate 308 is increased.

[0032] The working principle of the utility model is as follows: the silicon wafer to be annealed is placed on the top of the quartz substrate rack 205 and the thermocouple 203 is located at the bottom of the silicon wafer. After the placement is completed, the vacuum chamber door 201 is pushed to move to the left under the guidance of the guide rod 207, and the quartz substrate rack 205 and the silicon wafer are simultaneously made to penetrate into the interior of the vacuum chamber 1. After the movement is completed, the locking cylinder 206 is used to push the clamping rod 208 to move to the left side of the vacuum chamber door 201. After the clamping rod 208 is rotated to one side of the vacuum chamber door 201, the locking cylinder 206 is used to pull the clamping rod 208 to move to the left and squeeze the vacuum chamber door 201 to achieve the sealing between the vacuum chamber door 201 and the vacuum chamber 1. After the sealing is completed, the halogen tungsten lamp 304 is turned on to heat the interior of the vacuum chamber 1. At the same time, the heat generated by the halogen tungsten lamp 304 is monitored by the armored thermocouple 305, and the temperature of the bottom of the silicon wafer is monitored by the thermocouple 203. The temperature data monitored by the thermocouple 203 and the armored thermocouple 305 can be compared to perform temperature cascade control or temperature calibration control to accurately control the process temperature of the silicon wafer rapid annealing. After the annealing is completed, the locking cylinder 206 pushes the clamping rod 208 to move to the right so that the clamping rod 208 is separated from the right side of the vacuum chamber door 201, and the clamping rod 208 is rotated to separate the clamping rod 208 from the right side of the vacuum chamber door 201. The vacuum chamber door 201 and the quartz substrate rack 205 are pulled to the right by the handle 204 to take out the annealed silicon wafer on the top of the quartz substrate rack 205.

[0033] What is described above is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A structure for detecting and controlling temperature with double thermocouples, comprising a vacuum chamber (1), characterized in that: A mounting base (4) is fixedly mounted on both sides of the bottom of the vacuum chamber (1), a feeding device (2) is arranged on the right side of the vacuum chamber (1), and a detection device (3) is arranged on the left side of the mounting base (4); The feeding device (2) comprises two guide rods (207) inserted into the interior of the vacuum chamber (1), a vacuum chamber door (201) fixedly mounted on the right side of the guide rods (207), a quartz substrate rack (205) fixedly mounted on the left side of the vacuum chamber door (201), and four thermocouples (203) arranged on the top of the quartz substrate rack (205); the quartz substrate rack (205) penetrates into the interior of the vacuum chamber (1).

2. A double thermocouple detection and temperature control structure according to claim 1, characterized in that: Two locking cylinders (206) are fixedly mounted on the right side of the vacuum chamber (1), and the output ends of the locking cylinders (206) are rotatably connected to a clamping rod (208) via a bearing.

3. A double thermocouple detection and temperature control structure according to claim 1, characterized in that: A thermocouple sealing component (202) is arranged on the right side of the vacuum chamber door (201), and the thermocouple (203) passes through the vacuum chamber door (201) via the thermocouple sealing component (202) and extends to the right side of the vacuum chamber door (201).

4. A double thermocouple detection and temperature control structure according to claim 3, characterized in that: A handle (204) is fixedly mounted on the right side of the vacuum chamber door (201), and the handle (204) is located at the bottom of the thermocouple sealing assembly (202).

5. A double thermocouple detection and temperature control structure according to claim 1, characterized in that: The detection device (3) comprises a mounting plate (308) fixedly mounted on the left side of the vacuum chamber (1) by means of bolts, a quartz sleeve (306) inserted into the mounting plate (308), a halogen tungsten lamp (304) disposed inside the quartz sleeve (306), and an armored thermocouple (305) disposed inside the quartz sleeve (306), wherein the armored thermocouple (305) is located below the halogen tungsten lamp (304).

6. A double thermocouple detection and temperature control structure according to claim 5, characterized in that: An upper quartz partition plate (301) is fixedly mounted in the inner cavity of the vacuum chamber (1), and the top of the upper quartz partition plate (301) is in contact with the bottom of the quartz sleeve (306).

7. A double thermocouple detection and temperature control structure according to claim 5, characterized in that: A protective cover (307) is fixedly mounted on the right side of the mounting plate (308), and the halogen tungsten lamp tube (304) is inserted into the interior of the protective cover (307).

8. The structure of double thermocouple detection and temperature control according to claim 5, characterized in that: The outer side of the quartz sleeve (306) is provided with a sealing component (303), and the sealing component (303) penetrates into the interior of the mounting plate (308). The outer side of the sealing component (303) is provided with a fixing component (302), and the sealing component (303) is fixedly connected to the quartz sleeve (306) through the fixing component (302).

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