Anode substrate for real RGB and light-emitting device
By introducing cutting structures and isolation structures in the anode substrate of the OLED display, combining the photoresal process to remove excess materials, solving the problem of the effect of color filter in the existing technology and the high cost of FMM costs and poor quality. Production with higher quality luminous devices.
Patent Information
- Application Number
- CN202420997802.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-10
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2034-05-10
AI Technical Summary
In the colorization technology of existing OLED displays, the use of color filters will affect the luminous efficiency and brightness. The RGB pixels emit light independently due to the need for fine metal mask plates (FMMs), resulting in high production costs and poor quality.
Provide an anode substrate for Real RGB, including cutting structure, isolation structure, and anode structure. Remove excess materials through the photoresistic process to achieve the production of luminous devices without FMM.
It reduces production costs, improves product quality, and avoids the problem and deviation of accuracy when using FMM.
Smart Images
Figure CN222424633U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of light-emitting device manufacturing, in particular to an anode substrate and a light-emitting device for real RGB. Background Art
[0002] The colorization of OLED display is mainly achieved by color filter technology. This technology uses white light OLED combined with color filters. First, a white light OLED device is prepared, and then the three primary colors are obtained through color filters. The three primary colors are combined to achieve color display, but the use of color filters will seriously affect the luminous efficiency and brightness. It is also possible to use the method of independent RGB pixel emission. This method uses a fine metal mask plate, namely FMM, during the evaporation process. However, the production cost of FMM is too high and is not suitable for mass production. Secondly, the precision required by FMM is too high, which is easy to cause deviations, resulting in poor quality of the produced chips. Utility Model Content
[0003] The purpose of the utility model is to provide an anode substrate and a light-emitting device for real RGB, so as to solve the problems existing in the above-mentioned prior art, reduce production costs and improve product quality.
[0004] To achieve the above purpose, the utility model provides the following solutions:
[0005] The utility model provides an anode substrate for real RGB, comprising: a cutting structure, an isolation structure and a substrate with the anode structure, at least part of the isolation structure is arranged on the substrate between two adjacent anode structures, the anode structure is used to arrange a primary color film layer, the isolation structure is arranged on an end surface away from the substrate with a cutting structure, the edge of the cutting structure extends beyond the isolation structure, the portion of the isolation structure corresponding to the cathode is made of a conductive material, and the cutting structure is transparent.
[0006] Preferably, the cutting structure is a platform structure, and a large end is connected to the top surface of the isolation structure.
[0007] Preferably, the isolation structure includes a PDL layer, an inorganic layer and a metal layer in sequence along a direction away from the substrate; the PDL layer covers the edge of the anode structure on its peripheral side.
[0008] The utility model also provides a light-emitting device, comprising: the anode substrate for real RGB as described above; and a primary color film layer, a cathode layer and a packaging film sequentially arranged on the anode structure.
[0009] Compared with the prior art, the utility model has achieved the following technical effects:
[0010] The anode substrate for real RGB provided by the utility model has a cut-off structure thereon that can make the deposited base color film layer discontinuous when depositing the material layer, which makes it easy to remove excess material using a photolithography process. Therefore, the solution provided by the utility model can realize the production of light-emitting devices without FMM. Therefore, the utility model can reduce production costs and improve product quality. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0012] Figure 1 A schematic structural diagram of an anode substrate for real RGB provided in an embodiment of the utility model;
[0013] Figure 2 A schematic diagram of the structure of the light emitting device provided by the embodiment of the utility model
[0014] Figure 3 to Figure 23 This is a product schematic diagram corresponding to Step 1 to Step 21 in the light-emitting device manufacturing method provided in an embodiment of the utility model.
[0015] In the figure: 1-anode substrate for real RGB; 11-substrate; 12-anode structure; 13-cut-off structure; 14-metal layer; 15-inorganic layer; 16-PDL layer; 17-isolation structure; 2-primary color film layer; 3-cathode; 4-packaging film; 5-OC layer; 6-CG layer. DETAILED DESCRIPTION
[0016] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0017] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.
[0018] The utility model embodiment provides an anode substrate 1 for real RGB, such as Figure 1As shown, it includes: a cutting structure 13, an isolation structure 17 and a substrate 11 with an anode structure 12, at least part of the isolation structure 17 is arranged on the substrate 11 between two adjacent anode structures 12, the anode structure 12 is used to set the primary color film layer 2, the isolation structure 17 is provided with the cutting structure 13 on the end surface away from the substrate 11, the edge of the cutting structure 13 extends beyond the isolation structure 17, the isolation structure 17 corresponding to the cathode 3 is made of conductive material, and the cutting structure 13 is transparent.
[0019] The isolation structure 17 is used to isolate adjacent primary color film layers 2 and to conduct the cathode 3 .
[0020] The cutting structure 13 is made of a transparent material to ensure that light can pass through the cutting structure 13 during the exposure process to react with the photoresist; the cutting structure 13 can be a non-conductive insulating material such as SIO, SIN, or a conductive metal oxide such as ITO, FTO, etc.
[0021] The anode substrate 1 for real RGB provided by the utility model can make the base color film layer 2 discontinuous after deposition when the material layer is deposited, which makes it easy to remove excess material by using a photolithography process. Therefore, the solution provided by the utility model can realize the production of light-emitting devices without FMM. Therefore, the utility model can reduce production costs and improve product quality.
[0022] In order to improve the cutting effect, in some embodiments, the cutting structure 13 is a terrace structure, and the large end is connected to the top surface of the isolation structure 17. The cutting structure 13 is terrace-shaped and has an edge capable of cutting the evaporated material.
[0023] In some embodiments, the isolation structure 17 includes a PDL layer 16 , an inorganic layer 15 , and a metal layer 14 in sequence along a direction away from the substrate 11 ; the PDL layer 16 wraps around the edge of the anode structure 12 on its own side to better isolate the adjacent primary color film layer 2 .
[0024] The utility model also provides a light emitting device, such as Figure 2 As shown, it includes: an anode substrate 1 for real RGB as described in the above embodiment; and a primary color film layer 2, a cathode layer 3 and a packaging film 4 which are sequentially arranged on the anode structure 12.
[0025] The primary color film layer 2 includes an R film layer, a G film layer, and a B film layer, namely a red film layer, a green film layer, and a blue film layer.
[0026] In some embodiments, an OC layer and a CG layer are also included.
[0027] The present invention also provides a method for manufacturing a light emitting device, comprising:
[0028] Step 1: preparing the anode substrate 1 for real RGB as described in the above embodiment;
[0029] Step 2: depositing a primary color film layer, a cathode layer and a packaging film layer of the first color on the substrate in sequence;
[0030] Step 3: using a photolithography process to remove the base color film layer, cathode layer and packaging film layer at positions other than the first color position;
[0031] Step 4: manufacturing a second color primary color film layer and a third color primary color film layer; wherein the manufacturing method of the second color primary color film layer and the third color primary color film layer is the same as that of the first color primary color film layer;
[0032] Step 5: Make OC layer 5 and CG layer 6. OC layer 5 is overcoater, which plays a role of protection and flattening; CG layer 6 is coverglass, which plays a role of protection.
[0033] Specifically, step one includes:
[0034] depositing a PDL layer on a substrate;
[0035] The PDL layer is etched by photolithography; the remaining PDL layer covers the edge of the anode structure on its peripheral side;
[0036] The isolation structure layer and the cutting structure layer are grown, wherein the first layer of the isolation structure layer is an inorganic layer; the second layer is a metal layer; and the third layer is a transparent material layer;
[0037] The isolation structure layer and the cutting structure layer are etched by photolithography to form an isolation structure and a cutting structure.
[0038] Step three includes:
[0039] A photoresist protection layer is formed on the encapsulation film layer at the first color position by using a yellow light process;
[0040] The primary color film layer of the first color, the cathode layer and the packaging film layer other than the photoresist protection layer are etched.
[0041] More specifically,
[0042] Step 1: PDL layer growth, such as Figure 3 As shown; generally, CVD (vapor chemical deposition) is used to grow SIO or SIN materials; or a method of coating organic materials is used.
[0043] Step 2: PDL layer patterning - yellow light; use yellow light patterning solution, such as Figure 4 shown.
[0044] Step 3: PDL layer patterning - etching, using the above-mentioned photoresist as a mask, through the etching process, to obtain the following Figure 5 The structure shown in the figure. The PDL should cover the edge of the Anode (anode structure).
[0045] Step 4: Isolate the structure and cut off the growth of the structure, such as Figure 6 As shown in the figure, the first layer is inorganic, such as SIO, SIN; the second layer is metal, using W, Mo and other metals with stable chemical properties in the air (the choice of metal: stable in the air, conducive to production; and no chemical reaction with the subsequent cathode metal material); the third layer is transparent material, such as SIO, SIN, SION and other inorganics, or ITO and other transparent conductive oxides. This layer has no requirements for conductivity, but must be transparent.
[0046] Step 5: Isolation structure and cutting structure graphics - yellow light, such as Figure 7 As shown, a yellow light patterning scheme was used.
[0047] Step 6: Isolation structure and cutting structure patterning - etching, using the above-mentioned photoresist as a mask, through the etching process, to obtain the following Figure 8 The structure shown.
[0048] The top transparent cutting structure layer must extend beyond the middle metal layer. The extended length must ensure that the OLED organic material is cut off during the subsequent evaporation process.
[0049] Step 7: Evaporation of the first color OLED organic material, such as Fig. 9 As shown, the isolation structure and the cut-off structure make the organic material discontinuous.
[0050] Step 8: The cathode film of the first color OLED is formed, such as Fig.10 As shown, it can be a thermal evaporation method or a sputtering method, but both methods must ensure that a good ohmic contact is formed with the metal layer in the isolation structure.
[0051] Step 9: The first color OLED device is encapsulated and protected as a whole. Fig.11 As shown, the method for forming the encapsulation film includes CVD, ALD, etc., and the film quality can be a single-layer film or a stacked-layer film, including SIO, SIN, Al2O3, etc.
[0052] The key point is to be able to bypass the cut-off structure and completely cover the top cathode of the OLED device.
[0053] Step 10: Leave the second and third color OLED positions empty, such as Fig.12As shown, using a yellow light scheme, the first color is protected with photoresist and the remaining areas are left blank.
[0054] Step 11: Leave the second and third color OLED positions empty, such as Fig.13 As shown, the second and third color OLED positions are removed to the Anode using an etching scheme.
[0055] Part of the metal layer in the middle of the isolation structure must be exposed.
[0056] Step 12: Evaporation of the second color OLED organic material, such as Fig.14 As shown, the isolation structure makes the organic material discontinuous.
[0057] Step 13: The cathode of the second color OLED is formed into a film, such as Fig.15 As shown, it can be a thermal evaporation method or a sputtering method, but both methods must ensure good ohmic contact with the metal in the middle of the isolation structure.
[0058] The thickness can be adjusted according to the needs of the device of that color and does not have to be the same as the first color.
[0059] Step 14: The second color OLED device is encapsulated and protected as a whole, such as Fig.16 As shown, the method for forming the encapsulation film includes CVD, ALD, etc., and the film quality can be a single-layer film or a stacked-layer film, including SIO, SIN, Al2O3, etc.
[0060] The key point is to bypass the cutting structure and completely cover the cathode on the top layer of the OLED device.
[0061] Step 15: Leave the first and third color OLED positions empty, such as Fig.17 As shown, a yellow light scheme is used, the second color is protected with photoresist, and the remaining areas are left blank.
[0062] Step 16: Leave the first and third color OLED positions empty, such as Fig.18 As shown, an etching scheme is used to remove the material at the first color position to the interface layer of the first color, and the third color OLED position is removed to the Anode.
[0063] The metal part in the middle of the isolation structure must be exposed.
[0064] Step 17: Evaporation of the third color OLED organic material, such as Fig.19 As shown, between the anodes, the isolation structure makes the organic material discontinuous.
[0065] Step 18: The cathode of the third color OLED is formed into a film, such as Fig. 20 As shown, it can be a thermal evaporation method or a sputtering method, but both methods must ensure good ohmic contact with the metal in the middle of the isolation structure.
[0066] The thickness can be adjusted according to the needs of the color device and does not have to be the same as the first and second colors.
[0067] Step 19: The third color OLED device is encapsulated and protected as a whole. Fig.21 As shown, the method for forming the encapsulation film includes CVD, ALD, etc., and the film quality can be a single-layer film or a stacked-layer film, including SIO, SIN, Al2O3, etc.
[0068] The key point is to bypass the transparent layer that exceeds the I-shaped layer and completely cover the Cathode on the top layer of the OLED device.
[0069] Step 20: Leave the first and second color OLED positions empty. Fig. 22 As shown, a yellow light scheme is used, the third color is protected with photoresist, and the remaining areas are left blank.
[0070] Step 21: Leave the first and second color OLED positions empty. Fig.23 As shown, an etching scheme is used to remove the material at the first and second color locations to the interface layer of the first and second colors.
[0071] The present invention uses specific examples to illustrate the principle and implementation of the present invention. The above examples are only used to help understand the method and core idea of the present invention. At the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in the specific implementation and application scope. In summary, the content of this specification should not be understood as limiting the present invention.
Claims
1. An anode substrate for real RGB, characterized in that: include: A cutting structure, an isolation structure and a substrate with an anode structure, at least part of the isolation structure is arranged on the substrate between two adjacent anode structures, the anode structure is used to set the primary color film layer, the isolation structure is provided with a cutting structure on the end surface away from the substrate, the edge of the cutting structure extends beyond the isolation structure, the part of the isolation structure corresponding to the cathode is made of conductive material, and the cutting structure is transparent.
2. The anode substrate for real RGB according to claim 1, characterized in that: The cutting structure is a platform structure, and a large end is connected to the top surface of the isolation structure.
3. The anode substrate for real RGB according to claim 1, characterized in that: The isolation structure includes a PDL layer, an inorganic layer and a metal layer in sequence along a direction away from the substrate; the PDL layer covers the edge of the anode structure on its peripheral side.
4. A light emitting device, characterized in that: include: The anode substrate for real RGB according to any one of claims 1 to 3; as well as A base color film layer, a cathode layer and a packaging film are sequentially arranged on the anode structure.