Low-power-consumption power semiconductor module and power terminal

Abstract

The utility model relates to the technical field of power semiconductor modules, in particular to a low-power-consumption power semiconductor module and a power terminal, which comprises a power input part, a power transmission part and a power output part, and the input end and the output end of the power transmission part are respectively connected with the power input part and the power output part; the power transmission part is of a hollow structure; the wall thickness of the power transmission part is 1-2 mm. By adopting the scheme, on the premise of controlling the cost, the effective current sectional area of the power terminal can be enlarged, and the increase of effective resistance caused by a skin effect is reduced, so that the power loss is reduced, and the performance of the semiconductor module is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of power semiconductor modules, in particular to a low-power consumption power semiconductor module and a power terminal. Background Art

[0002] In the field of power electronics, power semiconductor modules are key components for achieving efficient conversion and control of electric energy, and their performance depends largely on the design and materials of power terminals (responsible for directing current from the external circuit into the module). In the prior art, the power terminals of power semiconductor modules are usually made of conductive materials such as copper or aluminum to provide good electrical and thermal conductivity. However, when current passes through these power terminals, due to the skin effect (skin effect: eddy currents caused by the magnetic field generated by the alternating current inside the conductor, these eddy currents generate a strong magnetic field near the surface of the conductor), the current tends to flow on the surface of the conductor, resulting in uneven distribution of current on the cross section of the terminal. This uneven current distribution leads to an increase in the effective resistance of the power terminal. The increase in effective resistance means an increase in power loss, which is unfavorable for power electronic devices that require high efficiency and high performance. In addition, as the frequency of the alternating current increases, the skin effect becomes more significant, resulting in greater power loss.

[0003] In order to transmit larger currents, power semiconductor modules in the prior art usually use larger conductor cross-sectional areas. However, the current density will still be significantly reduced at the center away from the surface. Therefore, conductors that transmit large AC currents are usually made into rectangular cross-sections instead of round or square to increase the surface area and reduce the influence of the skin effect. However, this design usually limits the thickness of the conductor to avoid excessive increase in power loss. The prior art also reduces the surface resistance and improves the AC resistance of the wire by silver or gold plating on the surface of the power terminal, but this solution will significantly increase the cost and is not conducive to cost control.

[0004] In summary, the power terminals of existing power modules are significantly affected by the skin effect, resulting in higher equivalent resistance and greater power loss, thereby reducing the overall performance of the module. Therefore, in view of the above technical problems, it is urgent to propose a low-power power semiconductor module and power terminal to reduce power loss and improve device performance. Utility Model Content

[0005] The utility model provides a low-power power semiconductor module and a power terminal, which can expand the effective current cross-sectional area of ​​the power terminal and reduce the increase of effective resistance due to the skin effect under the premise of controlling costs, thereby reducing power loss and improving the performance of the semiconductor module.

[0006] The utility model provides a basic solution 1:

[0007] A low-power consumption power terminal comprises a power input part, a power transmission part and a power output part, wherein an input end and an output end of the power transmission part are connected to the power input part and the power output part respectively;

[0008] The power transmission part is a hollow structure; the wall thickness of the power transmission part is 1 to 2 mm.

[0009] Furthermore, the power transmission part is a cylindrical power transmission part.

[0010] Furthermore, the diameter of the hollow cavity of the cylindrical power transmission part is 1 to 3 mm.

[0011] Furthermore, the input end and the output end of the power transmission part are fixedly connected to the power input part and the power output part respectively.

[0012] Furthermore, the power input part and the power transmission part, as well as the power transmission part and the power output part, are fixedly connected by welding.

[0013] Furthermore, the length of the power transmission portion is 21 to 24 mm.

[0014] Furthermore, the power transmission part is a square power transmission part.

[0015] Furthermore, the power transmission part is a twist-shaped power transmission part.

[0016] Furthermore, the surface of the power transmission part is plated with silver or gold.

[0017] The second basic solution provided by the utility model:

[0018] A low-power semiconductor module adopts the low-power terminal.

[0019] The principle and advantage of the utility model are: in this scheme, by designing the power transmission part as a hollow structure, a significant improvement in the performance of the semiconductor module is achieved. Specifically, the setting of the hollow structure can effectively suppress the skin effect, thereby optimizing the current distribution, increasing the effective cross-sectional area of ​​the power terminal through which the current passes, reducing the increase in effective resistance caused by the skin effect, and significantly reducing the power loss. In addition, this scheme takes into account the effect of the size of the hollow cavity on the skin effect suppression effect. A larger hollow cavity can better suppress the skin effect, but it will also increase the volume and weight of the power terminal, which may lead to an increase in the overall area and power consumption. Therefore, in order to balance the relationship between power loss reduction and terminal volume control, in this scheme, the wall thickness of the power transmission part is set between 1 and 2 mm. Not only does it ensure the effective reduction of power loss, but it also avoids the problem of increased volume and weight due to an excessively large hollow cavity.

[0020] In summary, the present solution can expand the effective current cross-sectional area of ​​the power terminal, reduce the increase in effective resistance due to the skin effect, and control the volume of the power terminal while reducing power loss, thereby improving the overall performance and efficiency of the semiconductor module. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a structural schematic diagram of a cylindrical power transmission part in an embodiment of a low-power consumption power terminal of the utility model.

[0022] Figure 2 It is a structural schematic diagram of a square power transmission part in an embodiment of a low-power power terminal of the utility model.

[0023] Figure 3 It is a structural schematic diagram of a twist-shaped power transmission part in an embodiment of a low-power power terminal of the utility model.

[0024] Figure 4 The figure is a schematic structural diagram of an embodiment of a low-power semiconductor module of the utility model. DETAILED DESCRIPTION

[0025] The following is further described in detail through specific implementation methods:

[0026] The symbols in the drawings of the specification include: a power input part 1 , a cylindrical power transmission part 2 , and a power output part 3 .

[0027] Embodiment 1:

[0028] A low power consumption power terminal, such as Figure 1 As shown, it includes a power input part 1, a power transmission part and a power output part 3. The input end and the output end of the power transmission part are respectively connected to the power input part 1 and the power output part 3. The surface of the power transmission part is plated with silver or gold. In this embodiment, in order to control the cost, the surface of the power transmission part is plated with silver.

[0029] Specifically, the input end and the output end of the power transmission part are fixedly connected to the power input part 1 and the power output part 3, respectively. In this embodiment, the power input part 1 and the power transmission part, and the power transmission part and the power output part 3 are fixedly connected by welding. In other embodiments of the present application, the power transmission part and the power output part 3 and the power input part 1 can also be integrally formed. When the power transmission part and the power input part 1 are integrally formed, the power output part 3 and the power transmission part are fixedly connected by welding. Similarly, when the power transmission part and the power input part 1 are integrally formed, the power input part 1 and the power transmission part are fixedly connected by welding. Among them, the power input part 1 is provided with two output ends, which are respectively connected to the input ends of the two power transmission parts DC+ and DC-, and the output ends of the two power transmission parts are respectively connected to two independent power output parts 3.

[0030] The power transmission part is a hollow structure, and the wall thickness of the power transmission part is 1 to 2 mm, and the length is 21 to 24 mm. The specific size is set according to actual needs. In this embodiment, a power transmission part with a wall thickness of 1.5 mm and a length of 22 mm is used. In this embodiment, the power transmission part is a cylindrical power transmission part 2, and the hollow cavity aperture of the cylindrical power transmission part 2 is 1 to 3 mm, specifically set to 1 mm. In other embodiments of the present application, the power transmission part can also be a square power transmission part, a twisted power transmission part, a triangular power transmission part, and a hexagonal power transmission part. Figure 2 , Figure 3 They are schematic diagrams of the structures of a square power transmission part and a twist-shaped power transmission part respectively.

[0031] The hollow structure in this solution can not only reduce stray inductance, but also reduce skin effect and power loss. Under the same current level (600A) and different voltage values, the loss comparison between the low-power power terminal in this embodiment and the existing power terminal is shown in Table 1.

[0032] Table 1 Schematic diagram of cylindrical power terminal loss

[0033]

[0034] At the same time, at the same power level, for example, 1200V / 600A, the loss is different when the inner diameter / aperture of the hollow cavity is different. The loss comparison of the power terminal under different inner diameters is shown in Table 2.

[0035]

[0036] It can be seen that the use of the hollow power terminal in this solution can expand the effective current cross-sectional area of ​​the power terminal, reduce the increase in effective resistance due to the skin effect, and control the volume of the power terminal while reducing power loss, thereby improving the overall performance and efficiency of the semiconductor module.

[0037] like Figure 4 As shown, a low-power semiconductor module adopts the low-power terminal.

[0038] The above are only embodiments of the utility model. The common sense such as the known specific structures and characteristics in the scheme is not described in detail here. The ordinary technicians in the relevant field know all the common technical knowledge in the technical field of the utility model before the application date or priority date, can obtain all the existing technologies in the field, and have the ability to apply the conventional experimental means before that date. The ordinary technicians in the relevant field can improve and implement this scheme in combination with their own abilities under the enlightenment given by this application. Some typical known structures or known methods should not become obstacles for ordinary technicians in the relevant field to implement this application. It should be pointed out that for the technicians in this field, without departing from the structure of the utility model, several deformations and improvements can be made, which should also be regarded as the protection scope of the utility model, which will not affect the effect of the implementation of the utility model and the practicality of the patent. The protection scope required by this application shall be based on the content of its claims, and the specific implementation methods and other records in the specification can be used to explain the content of the claims.

Claims

1. A low power consumption power terminal, characterized in that: It comprises a power input part, a power transmission part and a power output part, wherein the input end and the output end of the power transmission part are connected to the power input part and the power output part respectively; The power transmission part is a hollow structure; the wall thickness of the power transmission part is 1 to 2 mm.

2. The low power consumption power terminal according to claim 1, characterized in that: The power transmission part is a cylindrical power transmission part.

3. The low power consumption power terminal according to claim 2, characterized in that: The diameter of the hollow cavity of the cylindrical power transmission part is 1 to 3 mm.

4. The low power consumption power terminal according to claim 1, characterized in that: The input end and the output end of the power transmission part are fixedly connected to the power input part and the power output part respectively.

5. The low power consumption terminal according to claim 4, characterized in that: The power input part and the power transmission part, as well as the power transmission part and the power output part, are fixedly connected by welding.

6. The low power consumption power terminal according to claim 1, characterized in that: The length of the power transmission portion is 21 to 24 mm.

7. The low power consumption power terminal according to claim 1, characterized in that: The power transmission part is a square power transmission part.

8. The low power consumption terminal according to claim 1, characterized in that: The power transmission part is a twist-shaped power transmission part.

9. The low power consumption terminal according to any one of claims 1 to 8, characterized in that: The surface of the power transmission part is plated with silver or gold.

10. A low power semiconductor module, characterized in that: A low-power consumption power terminal as described in any one of claims 1 to 9 above is adopted.

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