Feeding mechanism and crystal bar drawing device
By designing a feeding mechanism for silicon rod drawing device, the separate addition of dopants is realized, solving the problem of dopants volatilizing at high temperatures, and improving the resistivity stability and quality control ability of silicon rods.
Patent Information
- Application Number
- CN202420180316.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-24
- Publication Date
- 2025-03-04
- Estimated Expiration
- 2034-01-24
AI Technical Summary
The existing dopant addition method causes dopant to volatilize during the high-temperature melting process, resulting in unstable resistivity of the silicon rod, and it is difficult to control the mass of the silicon rod.
A feeding mechanism is designed, including a barrel and a carrier, with a sealed receiving cavity provided in the carrier, and a feeding port is provided on the side wall of the barrel. The carrier can be added to the barrel through the feeding port and added to the crucible through the barrel to achieve separate addition of dopants.
By adding dopants separately, the dopants are avoided volatilization at high temperatures, ensuring that the resistivity of the silicon rod matches the theoretical goal, and improving the quality control capability of the silicon rod.
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Figure CN222557126U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of photovoltaic processing technology, and specifically relates to a feeding mechanism and a crystal rod pulling device. Background Art
[0002] RCZ (repeated crystal pulling) is a major method for preparing silicon rods. Its main feature is that raw materials can be added to the crucible after each silicon rod is pulled. There is no need to wait for cooling, stopping, dismantling, and reloading before adding raw materials. It has a high efficiency of crystal rod pulling. Due to the requirements of crystal rod resistivity, a certain amount of dopant needs to be added to the polysilicon raw material during the process of pulling the crystal rod to change the resistivity of the silicon rod.
[0003] In the existing technology, dopants are usually mixed with polysilicon raw materials first, so that the dopants can be added to the crucible together with the polysilicon raw materials, and then the high-temperature melting is carried out. However, since dopants are highly volatile at high temperatures, during the high-temperature melting process, a large amount of dopants may not enter the molten silicon due to volatilization, but be taken out of the furnace by the low-pressure protective atmosphere, resulting in a serious deviation in the dopant concentration in the molten silicon, making it difficult to obtain silicon rods that match the theoretical target design resistivity, which is not conducive to the quality control of the silicon rods. Utility Model Content
[0004] The present application aims to provide a feeding mechanism and a crystal rod pulling device to solve the problem that the existing dopant adding method is not conducive to the quality control of silicon rods.
[0005] In order to solve the above technical problems, this application is implemented as follows:
[0006] In a first aspect, the present application discloses a feeding mechanism, which comprises: a barrel and a carrier; wherein:
[0007] The carrier is provided with a containing cavity, and the containing cavity is used to contain the additive;
[0008] A feeding port is arranged on the side wall of the barrel, and the feeding port is used to add the carrier into the barrel.
[0009] Optionally, the barrel comprises a barrel body and a bottom plate; wherein,
[0010] The cylinder comprises a first end and a second end which are arranged in opposite directions along the axial direction;
[0011] The bottom plate is movably connected to the second end of the barrel, so that the barrel can be switched between a storage state and a discharge state. In the storage state, the bottom plate is connected to the second end of the barrel, and the bottom plate and the barrel are enclosed to form a storage space for accommodating the carrier. In the discharge state, the bottom plate is separated from the barrel, so that the carrier can be discharged from the bottom plate.
[0012] The feeding port is arranged on the side wall of the cylinder, and the distance between the feeding port and the second end meets a preset range.
[0013] Optionally, the preset range is 50-300 mm.
[0014] Optionally, the barrel further comprises a connecting rod, wherein the connecting rod is connected to the bottom plate and passes through the barrel body, and at least partially extends from the first end of the barrel body to the outside of the barrel body.
[0015] Optionally, the shape of the feeding port includes at least one of a polygon, a circle and an ellipse.
[0016] Optionally, the feeding port is circular in shape, and has a diameter of 80-200 mm.
[0017] Optionally, the carrier is spherical or cylindrical in shape.
[0018] Optionally, the carrier includes a carrier body and a sealing cover, wherein the sealing cover is detachably connected to the carrier body, and the sealing cover and the carrier body can enclose to form the accommodating cavity.
[0019] Optionally, the carrier is made of silicon-based material.
[0020] In a second aspect, the present application further discloses a crystal rod pulling device, characterized in that the crystal rod pulling device comprises: a furnace body and any one of the above-mentioned feeding mechanisms; wherein,
[0021] The furnace body is provided with a main operating chamber and a sub-chamber located on the top of the main operating chamber, the feeding mechanism is arranged in the main operating chamber and / or the sub-chamber, or the feeding mechanism is arranged on the side of the furnace body and can at least partially extend into the furnace body.
[0022] In an embodiment of the present application, the feeding mechanism can be used in a silicon rod drawing device. Specifically, the feeding mechanism can be used to separately add additives such as dopants to the crucible of the silicon rod drawing device. The feeding mechanism may include a barrel and a carrier, and a sealed accommodating cavity is provided in the carrier, and the additive can be placed in the carrier. A feeding port is provided on the side wall of the barrel, and the carrier can be added into the barrel through the feeding port, and then added into the crucible through the barrel to achieve the separate addition of the dopant. In this way, during the drawing process of the crystal rod, the dopant can be separately added to the crucible through the feeding mechanism at an appropriate stage according to actual needs, avoiding the current process of adding the dopant, in which the dopant is added together with the silicon material, resulting in the volatilization of the dopant. In this way, a silicon rod matching the theoretical target design resistivity can be obtained, which is beneficial to the quality control of the silicon rod.
[0023] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0025] Figure 1 It is a structural schematic diagram of a feeding mechanism described in an embodiment of the present application;
[0026] Figure 2 yes Figure 1 A schematic structural diagram of the feeding mechanism from another angle shown;
[0027] Figure 3 It is one of the structural schematic diagrams of a cylinder described in the application embodiment;
[0028] Figure 4 This is the second structural schematic diagram of a cylinder described in the application embodiment;
[0029] Figure 5 This is the third structural schematic diagram of a cylinder described in the application embodiment;
[0030] Figure 6 yes Figure 5 The detailed structural diagram of the cylinder A position shown;
[0031] Figure 7 It is a structural schematic diagram of a silicon rod drawing device described in an embodiment of the present application;
[0032] Figure numerals: 10 - barrel, 100 - feeding port, 101 - barrel body, 102 - bottom plate, 103 - connecting rod, 104 - top plate, 105 - first flange, 106 - second flange, 11 - carrier, 20 - furnace body, 201 - main operating room, 202 - auxiliary room, 203 - lifting mechanism, 204 - buckle, 205 - furnace cover, 21 - crucible, 30 - feeding mechanism. DETAILED DESCRIPTION
[0033] The embodiments of the utility model will be described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the utility model, and cannot be understood as limiting the utility model. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.
[0034] The term "first" or "second" in the specification and claims of this application may include one or more of the features explicitly or implicitly. In the description of this utility model, unless otherwise specified, "multiple" means two or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / " generally means that the objects connected before and after are in an "or" relationship.
[0035] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
[0036] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0037] The embodiment of the present application provides a feeding mechanism, which can be used in a crystal rod pulling device. Specifically, the feeding mechanism can be used to add additives into the crucible of the crystal rod pulling device. The additives can be dopants, impurity removers, etc. This application only takes the additives as dopants as an example for explanation, and other types of additives can be implemented by reference.
[0038] Reference Figure 1 , showing a schematic diagram of the structure of a feeding mechanism described in an embodiment of the present application, referring to Figure 2 , showing Figure 1 The schematic diagram of the structure of the feeding mechanism from another angle is shown in FIG. Figure 1 and Figure 2 As shown, the feeding mechanism may specifically include: a barrel 10 and a carrier 11; wherein a sealed accommodating cavity is provided in the carrier 11, and the accommodating cavity can be used to accommodate the added material; a feeding port 100 is provided on the side wall of the barrel 10, and the feeding port 100 can be used to add the carrier into the barrel 10.
[0039] In the embodiment of the present application, the feeding mechanism can be used in a silicon rod drawing device. Specifically, the feeding mechanism can be used to separately add additives such as dopants to the crucible of the silicon rod drawing device. The feeding mechanism may include a barrel 10 and a carrier 11. The carrier 11 is provided with a sealed accommodating cavity, and the additive can be placed in the carrier 11. A feeding port 100 is provided on the side wall of the barrel 10. The carrier 11 can be added into the barrel 10 through the feeding port 100, and added to the crucible through the barrel 10 to achieve the separate addition of the dopant. In this way, during the drawing process of the crystal rod, the dopant can be separately added to the crucible through the feeding mechanism at an appropriate stage according to actual needs, avoiding the current process of adding the dopant, in which the dopant is added together with the silicon material, resulting in the volatilization of the dopant. In this way, a silicon rod matching the theoretical target design resistivity can be obtained, which is beneficial to the quality control of the silicon rod.
[0040] In a specific application, after determining the weight of the dopant to be added, the operator can place the weighed dopant in the carrier 11 under the premise of high-purity hygienic work to ensure the sealing of the dopant pair to avoid volatilization caused by exposure of the dopant and avoid contamination of the dopant dispersion. Then, the carrier 11 is added to the barrel 10 from the feeding port 100 on the side wall of the barrel 10. Since the feeding port 100 is set on the side wall of the barrel 10, the distance between the feeding port 100 and the bottom of the barrel 10 is small. Therefore, in the process of adding the carrier 11 to the barrel 10, the potential energy of the carrier 11 containing the dopant is small, and the impact on the bottom of the barrel 10 is correspondingly small. In this way, the rupture of the carrier 11 and the bottom of the barrel 10 due to impact can be avoided, and double protection of the carrier 11 and the bottom of the barrel 10 can be achieved.
[0041] like Figure 1 and Figure 2 As shown, the barrel 10 comprises: a barrel 101 and a bottom plate 102; wherein the barrel 101 comprises a first end and a second end which are arranged in an axial direction away from each other, the first end may be the top end of the barrel 101, and the second end may be the bottom end of the barrel 101. The bottom plate 102 is movably connected to the second end of the barrel 101, so that the barrel 10 can be switched between a storage state and a discharge state. In the storage state, the bottom plate 102 is connected to the second end of the barrel 101, and the bottom plate 102 and the barrel 101 are enclosed to form a storage space for accommodating the carrier 11. In the discharge state, the bottom plate 102 is separated from the barrel 101, so that the carrier 11 can be discharged from the bottom plate 102; the feeding port 100 is arranged on the side wall of the barrel 101, and the distance between the feeding port 100 and the second end meets the preset range.
[0042] In a specific application, the carrier 11 can be added into the barrel 10 in the storage state, and in the process of adding the carrier 11 into the barrel 10 through the feeding port 100, the carrier 11 can naturally fall onto the bottom plate 102 of the barrel 10. Then, after the barrel 10 is dropped as a whole to a suitable position, the bottom plate 102 can be separated from the barrel 101, and after losing the shielding of the barrel 101, the carrier 11 can fall from the bottom plate 102 into the silicon liquid in the crucible, and the dopant in the carrier 11 is doped into the silicon liquid.
[0043] Optionally, the carrier 11 is spherical or cylindrical in shape, so that the carrier 11 can quickly fall from the bottom plate 102 into the crucible in the unloading state, thereby preventing the carrier 11 from melting due to staying on the bottom plate 102 for a long time.
[0044] It should be noted that the drawings of the present application only show the case where the carrier 11 is cylindrical. In actual applications, those skilled in the art can set the carrier 11 to be cylindrical or spherical according to actual needs, and the embodiments of the present application do not limit this.
[0045] In some optional embodiments of the present application, the carrier 11 includes a carrier body and a blocking cover, wherein the blocking cover is detachably connected to the carrier body, and the blocking cover and the carrier body can enclose the accommodating cavity. In a specific application, the blocking cover can be first removed from the carrier body to place the dopant into the carrier body, and then the blocking cover can be installed on the carrier body to form a sealed accommodating cavity to achieve sealed protection for the dopant.
[0046] Optionally, the material of the carrier 11 is a silicon-based material, so that after the carrier 11 and the dopant are added to the silicon liquid in the crucible, the carrier 11 can be melted in the silicon liquid under a high temperature environment and fused with the silicon liquid, and the dopant is exposed and melted into the silicon liquid accordingly. In this way, the introduction of new impurities can be avoided, and the dopant can be doped into the silicon liquid.
[0047] For example, the silicon-based material may include but is not limited to at least one of a single crystal silicon material and a polycrystalline silicon material, which is not limited in the embodiments of the present application.
[0048] Reference Figures 3 to 6 , shows a schematic diagram of the structure of a cylinder described in an embodiment of the present application, such as Figure 3 As shown, the feed port 100 is disposed on the barrel 101, and the distance D between the feed port 100 and the second end meets the preset range, which is 50-300 mm. In this way, the carrier 11 loaded with dopants can be placed in the barrel 10, and since the position of the feed port 100 is higher than the bottom of the barrel 10, the carrier 11 can be prevented from falling from the feed port 100 to the outside of the barrel 101 during use.
[0049] In practical applications, when the distance D between the center of the feed port 100 and the bottom of the barrel 10 is less than 50 mm, the carrier 11 is likely to leak out of the feed port 100. When the distance D between the center of the feed port 100 and the bottom of the barrel 10 is greater than 300 mm, due to the large height difference between the feed port 100 and the bottom of the barrel 10, the gravitational potential energy is converted into kinetic energy during the process of loading the carrier 11 into the barrel 10, which will cause the structural integrity of the carrier 11 and the bottom of the barrel 10 to have the risk of impact rupture.
[0050] For example, the distance D between the center of the feeding port 100 and the bottom of the barrel 10 can be 50 mm, 80 mm, 165 mm, 231 mm or 300 mm, etc., which is not limited in the embodiments of the present application.
[0051] Optionally, the shape of the feeding port 100 may include at least one of a polygon, a circle, and an ellipse. The embodiment of the present application does not specifically limit the shape of the feeding port 100.
[0052] In a specific application, the shape of the feed port 100 may preferably be a circular or elliptical shape without sharp corners, so as to avoid stress concentration at the sharp corners and reduce the service life of the barrel 10 .
[0053] Optionally, the feeding port 100 is circular in shape, and the diameter of the feeding port 100 is 80-200 mm, so as to facilitate the operation of feeding through the feeding barrel 10 while avoiding a major impact on the structure of the barrel body 101 .
[0054] In practical applications, when the diameter of the feed port 100 is less than 80 mm, it is not convenient for operators to add the carrier 11 to the feed port 100 due to the small diameter of the feed port 100, and the feeding efficiency is low. When the diameter of the feed port 100 is greater than 200 mm, the diameter of the feed port 100 is too large, which greatly damages the structural strength of the cylinder 101 itself and greatly reduces the structural stability of the cylinder 101.
[0055] In practical applications, the barrel 10 described in the embodiment of the present application can be processed separately, or it can be modified from the existing barrel 10 for adding silicon-based materials, and the implementation methods are relatively rich.
[0056] Optionally, the barrel 10 may further include a connecting rod 103, which is connected to the bottom plate 102 and passes through the barrel 101, and at least partially extends from the first end of the barrel 101 to the outside of the barrel 101. When the feeding mechanism is used in the crystal ingot pulling device, the connecting rod 103 may be connected to a lifting mechanism in the crystal ingot pulling device, so as to drive the bottom plate 102 to rise and fall under the drive of the lifting mechanism, so as to achieve connection or separation between the bottom plate 102 and the barrel 101.
[0057] like Figure 2As shown, the barrel 10 may further include a top plate 104, which is openably connected to the first end of the barrel 101. In practical applications, when the top plate 104 is open, additives can be added to the barrel 101 through the top plate 104, or the additives can be taken out of the barrel 101. A first flange 105 may be provided outside the first end of the barrel 101, and the first flange 105 may be used to support the installation of the top plate 104. A second flange 106 may be provided in the middle area of the barrel 101, and the second flange 106 may be used to abut against the limiting mechanism in the silicon rod drawing device to achieve separation of the barrel 101 from the bottom plate 102.
[0058] In summary, the feeding mechanism described in the embodiment of the present application can at least include the following advantages:
[0059] In an embodiment of the present application, the feeding mechanism can be used in a silicon rod drawing device. Specifically, the feeding mechanism can be used to separately add additives such as dopants to the crucible of the silicon rod drawing device. The feeding mechanism may include a barrel and a carrier, and a sealed accommodating cavity is provided in the carrier, and the additive can be placed in the carrier. A feeding port is provided on the side wall of the barrel, and the carrier can be added into the barrel through the feeding port, and then added into the crucible through the barrel to achieve the separate addition of the dopant. In this way, during the drawing process of the crystal rod, the dopant can be separately added to the crucible through the feeding mechanism at an appropriate stage according to actual needs, avoiding the current process of adding the dopant, in which the dopant is added together with the silicon material, resulting in the volatilization of the dopant. In this way, a silicon rod matching the theoretical target design resistivity can be obtained, which is beneficial to the quality control of the silicon rod.
[0060] Reference Figure 7 , shows a schematic structural diagram of a silicon rod drawing device according to an embodiment of the present application, such as Figure 7 As shown, the silicon rod drawing device may specifically include: a furnace body 20 and the feeding mechanism 30 described in any of the above embodiments; the furnace body 20 may include a main operating chamber 201 and a sub-chamber 202 located at the top of the main operating chamber 201, and the feeding mechanism 30 may be arranged in the main operating chamber 201 and / or the sub-chamber 202 according to the above needs, or the feeding mechanism 30 may also be arranged on the side of the furnace body 20 and may at least partially extend into the furnace body 20.
[0061] It should be noted that, in a specific application, the position of the feeding mechanism 30 can be set according to actual needs to perform the feeding operation from the top or side of the furnace body 20. Figure 7As shown, the feeding mechanism 30 can be arranged in the auxiliary chamber 202, or the feeding mechanism 30 can be arranged in the furnace cover 205 at the top of the main operation chamber 201, so as to feed from the top of the furnace body 20. For another example, the feeding mechanism 30 can be arranged on the side of the furnace body 20 and at least partially extend into the furnace body 20, so as to feed from the side of the furnace body 20. The specific position of the feeding mechanism 30 is not limited in the present application.
[0062] like Figure 7 As shown, a crucible 21 may be provided in the main operating chamber 201, and the crucible 21 may be used to contain silicon materials; a lifting mechanism 203 is provided in the auxiliary chamber 202, and the feeding mechanism 30 is connected to the lifting mechanism 203, and the lifting mechanism 203 may be used to drive the feeding mechanism 30 to rise and fall, so that the feeding mechanism 30 switches between a material storage state and a material unloading state. In actual applications, a buckle 204 may be provided on the lifting mechanism 203 for connecting with the feeding mechanism 30.
[0063] In a specific application, the silicon rod pulling device can be a single crystal furnace. After the weight of the dopant to be added has been determined, the operator weighs the required mass of dopant and loads it into the carrier 11 of the feeding mechanism 30 under the premise of high purity and sanitation, and seals the carrier 11. Then the barrel 10 and the carrier 11 containing the dopant can be transported to the single crystal furnace together.
[0064] Next, the connecting rod 103 connected to the bottom plate 102 on the barrel 10 can be connected to the buckle 204 in the auxiliary chamber 202 of the single crystal furnace. At this time, under the action of gravity, the barrel 101 of the barrel 10 can be connected to the bottom plate 102, that is, the barrel 10 can be in a storage state. At this time, the carrier 11 loaded with dopants can be placed from the feeding port 100 onto the bottom plate 102 of the barrel 10. Then, the lifting mechanism 203 can be used to lift the barrel 10 into the auxiliary chamber 202. After confirming the timing of adding the dopant, the lifting mechanism 203 can be used to drive the barrel 10 to descend. When the barrel 10 descends to a certain position, the second flange 106 outside the barrel 10 will abut against the limiting mechanism on the single crystal furnace, limiting the barrel 101 from continuing to descend, but the connecting rod 103 and the bottom plate 102 can continue to descend. In this way, the bottom plate 102 is separated from the lower edge of the barrel 101 to form an opening, that is, the barrel 10 is switched to the unloading state, and the carrier 11 originally on the bottom plate 102 falls into the silicon liquid under the action of gravity. Finally, the effective addition of dopants is achieved, the evaporation time of dopants in molten silicon is shortened, and the subsequent temperature adjustment, welding, seeding, shoulder placement and equal diameter finishing operations are performed according to the CZ single crystal silicon production process steps.
[0065] In the embodiment of the present application, since the dopant can be added separately, during the process of pulling the crystal rod, the dopant can be added separately to the crucible 21 through the feeding mechanism 30 at an appropriate stage according to actual needs, thereby avoiding a large amount of volatilization caused by the dopant being added together with the silicon material. In this way, a silicon rod matching the theoretical target design resistivity can be obtained, which is beneficial to the quality control of the silicon rod.
[0066] In actual applications, compared with the operation of adding the dopant and the silicon-based raw material into the crucible 21 at the same time and melting them together, the embodiment of the present application can use the feeding mechanism 30 to add the dopant separately after the silicon-based raw material is melted into silicon liquid, thereby shortening the evaporation time of the dopant in the molten silicon, reducing the mass loss of the dopant, reducing the amount of dopant used, and facilitating the control of the quality of the silicon rod.
[0067] In another embodiment of the present application, the furnace body 20 further includes a furnace cover 205 , which is provided with an opening for accommodating a feeding mechanism 30 , and the feeding mechanism 30 can add dopants or silicon materials to the crucible 21 in the furnace body 20 through the opening on the furnace cover 205 .
[0068] A large number of tests have proved that, taking the production of large-size M10 / G12 product specifications and head resistivity of 2Ω·cm±0.1 silicon rods as an example, 100 production outputs were statistically analyzed. Using the feeding mechanism 30 of the present application to add dopants separately after molten silicon, the resistance hit pass rate of the silicon rods is >90% or more. In the traditional operation of adding dopants and silicon-based raw materials at the same time and melting them together, the resistance hit pass rate of the silicon rods is only about 72%. The technical solution described in the embodiment of the present application can greatly improve the resistivity pass rate of silicon rods, which is beneficial to controlling the quality of crystal rods.
[0069] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0070] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.
Claims
1. A feeding mechanism, characterized in that: The feeding mechanism comprises: a barrel and a carrier; wherein, The carrier is provided with a containing cavity, and the containing cavity is used to contain the additive; A feeding port is arranged on the side wall of the barrel, and the feeding port is used to add the carrier into the barrel.
2. The feeding mechanism according to claim 1, characterized in that: The barrel comprises a barrel body and a bottom plate; wherein, The cylinder comprises a first end and a second end which are arranged in opposite directions along the axial direction; The bottom plate is movably connected to the second end of the cylinder; The feeding port is arranged on the side wall of the cylinder, and the distance between the feeding port and the second end meets a preset range.
3. The feeding mechanism according to claim 2, characterized in that: The preset range is 50-300 mm.
4. The feeding mechanism according to claim 2, characterized in that: The barrel further includes a connecting rod, which is connected to the bottom plate and penetrates the barrel body and at least partially extends from the first end of the barrel body to the outside of the barrel body.
5. The feeding mechanism according to claim 1, characterized in that: The shape of the feeding port includes at least one of a polygon, a circle and an ellipse.
6. The feeding mechanism according to claim 1, characterized in that: The feeding port is circular in shape, and has a diameter of 80-200 mm.
7. The feeding mechanism according to claim 1, characterized in that: The carrier is in a spherical or cylindrical shape.
8. The feeding mechanism according to claim 1, characterized in that: The carrier includes a carrier body and a blocking cover, wherein the blocking cover is detachably connected to the carrier body, and the blocking cover and the carrier body can be enclosed to form the accommodating cavity.
9. The feeding mechanism according to claim 1, characterized in that: The material of the carrier is silicon-based material.
10. A crystal rod pulling device, characterized in that: The crystal rod pulling device comprises: a furnace body, and a feeding mechanism according to any one of claims 1 to 9; wherein, The furnace body includes a main operating chamber and a secondary chamber located on the top of the main operating chamber, and the feeding mechanism is arranged in the main operating chamber and / or the secondary chamber, or the feeding mechanism is arranged on the side of the furnace body and at least partially extends into the furnace body.