High-frequency surface acoustic wave atomization driver

Abstract

The utility model discloses a high-frequency surface acoustic wave atomization driver. In the high-frequency surface acoustic wave atomization driver, a voltage stabilization module carries out voltage stabilization and voltage reduction processing on an input power supply and then outputs a 5V voltage source; the MCU is electrically connected with the control panel and the frequency generator, the control panel transmits a control instruction to the MCU, and the MCU outputs a PWM signal to control the frequency generator to output a frequency signal; a frequency signal output by the frequency generator is transmitted to the high-frequency power amplifier for amplification processing, and the amplified frequency signal output by the high-frequency power amplifier drives the surface acoustic wave chip to operate for atomization. According to the utility model, the MCU is arranged to control the frequency generator to output high-frequency sine waves, and the MCU adjusts the output of radio frequency power by adjusting the PWM duty ratio; the high-frequency surface acoustic wave atomizer can output radio frequency power through amplification of an amplifier, can output sine waves with the power of 0-10 W and the frequency of 0-50 MHz, can drive various high-frequency surface acoustic wave atomizer chips, and can achieve miniaturization and generalization of products.

Description

Technical Field

[0001] The utility model belongs to the technical field of atomizers, in particular to a high-frequency surface acoustic wave atomization driver. Background Art

[0002] The atomizer controls the power output of the atomizer through a switch circuit to instantly heat the liquid to achieve an atomized state. However, the existing atomizers use resistance wires or ultrasonic waves, which are large in size and short in life.

[0003] As a new low-power atomization device that can atomize water, liquid medicine, glue, oil, etc., the surface acoustic wave atomization chip technology has made great progress in recent years. However, most of the drivers of surface acoustic wave atomizers can only output fixed sine waves for driving, and cannot be used for surface acoustic wave atomizer chips with multiple frequencies.

[0004] Now we design a high-frequency surface acoustic wave atomization driver, which outputs a 10W sine wave with a frequency of 0 to 50MHz and can be adjusted within the range to drive various frequency surface acoustic wave atomizer chips. Utility Model Content

[0005] The utility model aims to provide a high-frequency surface acoustic wave atomization driver, which outputs a high-frequency sine wave by setting an MCU to control a frequency generator; amplifies the frequency through an amplifier to achieve the output of radio frequency power, and can output a sine wave with a frequency of 0 to 50 MHz and a power of 0 to 10 W, thereby solving the driving problem of a surface acoustic wave atomizer.

[0006] In order to solve the above technical problems, the utility model is realized by the following technical solutions:

[0007] The utility model discloses a high-frequency surface acoustic wave atomization driver, comprising a power supply module for power supply, wherein the power supply module outputs direct current to a voltage stabilizing module, wherein the voltage stabilizing module performs voltage stabilization and voltage reduction processing on the input power supply and then outputs a 5V voltage source; an MCU, wherein the MCU is electrically connected to a control panel and a frequency generator respectively, wherein the control panel transmits a control instruction to the MCU, wherein the MCU outputs a PWM signal to control the frequency generator to output a frequency signal; wherein the frequency signal output by the frequency generator is transmitted to a high-frequency power amplifier for amplification processing, and the high-frequency power amplifier outputs the amplified frequency signal to drive a surface acoustic wave chip to operate for atomization.

[0008] As a preferred technical solution of the utility model, the power module adopts a lithium battery, and the lithium battery outputs a 12V DC voltage source to the voltage stabilizing module.

[0009] As a preferred technical solution of the utility model, the voltage stabilizing module includes a voltage stabilizing chip U3; the model of the voltage stabilizing chip U3 is LD1117; the input terminal VIN of the voltage stabilizing chip U3 is connected to a 12V voltage source, and the output terminal VOUT of the voltage stabilizing chip U3 outputs a 5V voltage source; the GND terminal of the voltage stabilizing chip U3 is grounded.

[0010] As a preferred technical solution of the utility model, the input terminal VIN of the voltage stabilizing chip U3 is connected to grounding capacitors C15, C14 and C2 respectively; the output terminal VOUT of the voltage stabilizing chip U3 is connected to grounding capacitors C12 and C13.

[0011] As a preferred technical solution of the utility model, the MCU adopts a chip U1 of model STM32F103, pin 15 of the chip U1 is connected to a 5V voltage source, and pins 11 and 17 of the chip U1 are grounded; pins 12 and 13 of the chip U1 are both connected to the first end of a series magnetic bead inductor B1, and the second end of the magnetic bead inductor B1 is connected to a 5V voltage source; the first end of the magnetic bead inductor B1 is also connected to a grounding capacitor C9; pin 30 of the chip U1 is connected in series with a resistor R10 and a light-emitting diode D1 to ground in sequence; pin 36 of the chip U1 outputs a PWM signal to a frequency generator.

[0012] As a preferred technical solution of the utility model, the frequency generator includes a chip U2 with a model number of AD9851; pins 6, 11, 18 and 23 of the chip U2 are all connected to a 5V voltage source, and pins 5, 10, 19 and 24 of the chip U2 are all grounded; pin 9 of the chip U2 is connected to a crystal oscillator; pin 12 of the chip U2 is connected to the drain of the MOS tube Q4, the source series resistor R22 of the MOS tube Q4 is grounded, and the gate series resistor R21 of the MOS tube Q4 is connected to pin 36 of the chip U1; pins 1-4 and 25-28 of the chip U2 are respectively connected to pins 43-47 and 2-4 of the chip U1; pin 21 of the chip U2 outputs a frequency signal to a high-frequency power amplifier.

[0013] As a preferred technical solution of the utility model, the high-frequency power amplifier includes an amplifier Q1 with a signal of AG603-89; pin 1 of the amplifier Q1 is connected in series with capacitor C23, inductor L3, L2, and L1 to pin 21 of chip U2 in sequence; pin 1 of the amplifier Q1 is also connected in series with resistor R5 to a 5V voltage source, and pin 1 of the amplifier Q1 is also connected in series with resistor R4 to ground; pin 2 of the amplifier Q1 is connected in series with resistor R6 to ground, and both ends of the resistor R6 are connected in parallel with capacitor C6; pin 3 of the amplifier Q1 is connected in series with inductor L5 and resistor R17 to a 12V voltage source in sequence, and pin 3 of the amplifier Q1 is also connected in series with resistor C28 to one end of the RF antenna base Z1, and the other end of the RF antenna base Z1 is grounded.

[0014] As a preferred technical solution of the utility model, the two ends of the resistor R21 are respectively connected to grounded capacitors C33 and C34; a capacitor C22 is connected in series between the drain and source of the MOS tube Q4.

[0015] As a preferred technical solution of the utility model, one end of the inductor L1 connected to pin 21 of the chip U2 is also connected to a grounding capacitor C17 and a grounding resistor R5; the other end of the inductor L1 is connected to a grounding capacitor C19; the middle connection point between the inductor L3 and the inductor L2 is connected to a grounding capacitor C20; the middle connection point between the inductor L3 and the capacitor C23 is connected to a grounding resistor R16; the middle connection point between the inductor L5 and the resistor R17 is connected to a grounding capacitor C27.

[0016] The utility model has the following beneficial effects:

[0017] The utility model outputs a high-frequency sine wave by setting an MCU to control the frequency generator, and the MCU adjusts the output of the radio frequency power by adjusting the PWM duty cycle; the output of the radio frequency power is achieved by amplifying the amplifier, and can output a 0-10W power, a 0-50MHz frequency sine wave, can drive a variety of high-frequency surface acoustic wave atomizer chips, and can realize the miniaturization and universalization of the product.

[0018] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for describing the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0020] Figure 1 It is a system block diagram of a high-frequency surface acoustic wave atomization driver;

[0021] Figure 2 This is the circuit diagram of the voltage stabilizing module;

[0022] Figure 3 Chip wiring diagram for MCU;

[0023] Figure 4 is the circuit diagram of the frequency generator;

[0024] Figure 5 This is the circuit diagram of the high frequency power amplifier;

[0025] Figure 6This is a circuit diagram of the button K1 of the second embodiment. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] Embodiment 1:

[0028] See also Figure 1-5 As shown, the utility model is a high-frequency surface acoustic wave atomization driver, including a power module and an MCU for power supply. After receiving the control instruction of the key, the MCU outputs a signal to control the clock frequency generator to output a radio frequency signal. The radio frequency signal is filtered through a low-pass filter and then amplified and outputted through a high-frequency power amplifier.

[0029] Specifically, the power module uses a lithium battery, which outputs a 12V DC voltage source to the voltage stabilizing module. The voltage stabilizing module stabilizes and steps down the input power supply and then outputs a 5V voltage source to power the entire device. The MCU is electrically connected to the control panel and the frequency generator respectively. The control panel transmits control instructions to the MCU, and the MCU outputs a PWM signal to control the frequency generator to output a frequency signal. The frequency signal output by the frequency generator is transmitted to the high-frequency power amplifier for amplification, and the high-frequency power amplifier outputs the amplified frequency signal to drive the surface acoustic wave chip to operate for atomization.

[0030] Specifically, Figure 2 As shown, the voltage stabilizing module includes a voltage stabilizing chip U3; the model of the voltage stabilizing chip U3 is LD1117; the input terminal VIN of the voltage stabilizing chip U3 is connected to a 12V voltage source, and the output terminal VOUT of the voltage stabilizing chip U3 outputs a 5V voltage source; the GND terminal of the voltage stabilizing chip U3 is grounded; the input terminal VIN of the voltage stabilizing chip U3 is respectively connected to grounding capacitors C15, C14 and C2; the output terminal VOUT of the voltage stabilizing chip U3 is connected to grounding capacitors C12 and C13.

[0031] Specifically, Figure 3 As shown, the MCU uses the STM32F103 chip U1, a 32-bit MCU microcontroller with an embedded ARM core, ARM Cortex TM-M3 processor is the latest generation of ARM processor for embedded systems. This driver uses this single chip as the main control, realizes key operation, screen display, controls the frequency output chip through the IIC interface, and outputs PWM duty cycle to adjust the output of RF power, and excites the high-frequency surface acoustic wave chip;

[0032] Pin 15 of chip U1 is connected to a 5V voltage source, and pins 11 and 17 of chip U1 are grounded; pins 12 and 13 of chip U1 are both connected to the first end of a series magnetic bead inductor B1, and the second end of the magnetic bead inductor B1 is connected to a 5V voltage source; the first end of the magnetic bead inductor B1 is also connected to a grounding capacitor C9; pin 30 of chip U1 is connected in series with resistor R10 and light-emitting diode D1 to ground in sequence; pin 36 of chip U1 outputs a PWM signal to a frequency generator.

[0033] Specifically, Figure 4 As shown, the frequency generator includes a chip U2 of model AD9851; AD9851 is used to output arbitrary frequency signals. As the RF excitation signal source. The direct frequency synthesizer produced by AD company has a maximum clock of 125MHz and adopts advanced CMOS technology. It is mainly composed of three parts: programmable DDS system, high-performance digital-to-analog converter (DAC) and high-speed comparator, which can realize full digital programming and control of frequency synthesis. The 6th, 11th, 18th and 23rd pins of chip U2 are all connected to the 5V voltage source, among which the 11th and 18th pins provide power for the internal analog circuit, and the 6th and 23rd pins provide power for the internal digital circuit; the 5th, 10th, 19th and 24th pins of chip U2 are all grounded; the 9th pin of chip U2 is the input end of the external crystal oscillator, with a maximum value of 125MHZ, and the 9th pin is connected to the crystal oscillator;

[0034] The 12th pin of the chip U2 is connected to the drain of the MOS tube Q4, the source of the MOS tube Q4 is connected in series with a resistor R22 to ground, and the gate of the MOS tube Q4 is connected in series with a resistor R21 to the 36th pin of the chip U1; the external resistor of the 12th pin of the chip U2 determines the current size of the output end of the device; the two ends of the resistor R21 are respectively connected to grounding capacitors C33 and C34; a capacitor C22 is connected in series between the drain and source of the MOS tube Q4;

[0035] Pins 7-8 of chip U2 are connected to pins 5-6 of chip U1, pin 7 of chip U2 is a control word loading clock, which is used to load parallel / serial frequency / phase control words, and pin 8 of chip U2 is a frequency update control, which updates the frequency according to the register on the rising edge; pins 1-4 and 25-28 of chip U2 are connected to pins 43-47 and 2-4 of chip U1 respectively; pin 21 of chip U2 outputs a frequency signal to a high-frequency power amplifier, and pin 20 of chip U2 is a complementary output of pin 21, and pin 20 of chip U2 is connected to a grounding resistor R2;

[0036] It is understandable that the signal after low-pass filtering is relatively small and cannot drive the surface acoustic wave load, so the output signal must be power amplified; specifically, Figure 5 As shown, the high-frequency power amplifier in the utility model includes an amplifier Q1 with a signal of AG603-89; the 1st pin of the amplifier Q1 is connected in series with a capacitor C23, an inductor L3, L2, and L1 to the 21st pin of the chip U2 in sequence; the 1st pin of the amplifier Q1 is also connected in series with a resistor R5 to a 5V voltage source, and the 1st pin of the amplifier Q1 is also connected in series with a resistor R4 to ground; the 2nd pin of the amplifier Q1 is connected in series with a resistor R6 to ground, and both ends of the resistor R6 are connected in parallel with the capacitor C6; the 3rd pin of the amplifier Q1 is connected in series with an inductor L5 and a resistor R17 to a 12V voltage source in sequence, and the amplifier Pin 3 of Q1 is also connected in series with resistor C28 to one end of the RF antenna base Z1, and the other end of the RF antenna base Z1 is grounded. The end of the inductor L1 connected to pin 21 of the chip U2 is also connected to a grounding capacitor C17 and a grounding resistor R5; the other end of the inductor L1 is connected to a grounding capacitor C19; the middle connection point between the inductor L3 and the inductor L2 is connected to a grounding capacitor C20; the middle connection point between the inductor L3 and the capacitor C23 is connected to a grounding resistor R16; the middle connection point between the inductor L5 and the resistor R17 is connected to a grounding capacitor C27.

[0037] Embodiment 2:

[0038] As a supplementary solution of a high-frequency surface acoustic wave atomization driver proposed by the utility model, Figure 6 As shown, the control panel includes a button K1, a first end of the button K1 is grounded, and a second end of the button K1 is connected in series with a resistor R1 to a 5V voltage source; the second end of the button K1 is also connected to pin 1 of the chip U1 for inputting a switch signal to the MCU.

[0039] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0040] The preferred embodiments of the utility model disclosed above are only used to help explain the utility model. The preferred embodiments do not describe all the details in detail, nor do they limit the utility model to the specific implementation methods described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the utility model, so that technicians in the relevant technical field can well understand and use the utility model. The utility model is limited only by the claims and their full scope and equivalents.

Claims

1. A high-frequency surface acoustic wave atomization driver, characterized in that: include A power supply module for power supply, the power supply module outputs direct current to the voltage stabilizing module, the voltage stabilizing module performs voltage stabilization and voltage reduction processing on the input power supply and then outputs a 5V voltage source; MCU, the MCU is electrically connected to the control panel and the frequency generator respectively, the control panel transmits control instructions to the MCU, and the MCU outputs a PWM signal to control the frequency generator to output a frequency signal; The frequency signal output by the frequency generator is transmitted to the high-frequency power amplifier for amplification processing, and the high-frequency power amplifier outputs the amplified frequency signal to drive the surface acoustic wave chip to operate for atomization.

2. A high-frequency surface acoustic wave atomization driver according to claim 1, characterized in that: The power module uses a lithium battery, and the lithium battery outputs a 12V DC voltage source to the voltage stabilizing module.

3. A high-frequency surface acoustic wave atomization driver according to claim 2, characterized in that: The voltage stabilizing module includes a voltage stabilizing chip U3; the model of the voltage stabilizing chip U3 is LD1117; The input terminal VIN of the voltage stabilizing chip U3 is connected to a 12V voltage source, and the output terminal VOUT of the voltage stabilizing chip U3 outputs a 5V voltage source; the GND terminal of the voltage stabilizing chip U3 is grounded.

4. A high-frequency surface acoustic wave atomization driver according to claim 3, characterized in that: The input terminal VIN of the voltage stabilizing chip U3 is connected to grounding capacitors C15, C14 and C2 respectively; the output terminal VOUT of the voltage stabilizing chip U3 is connected to grounding capacitors C12 and C13.

5. The high-frequency surface acoustic wave atomization driver according to claim 1, characterized in that: The MCU uses a chip U1 of model STM32F103, the 15th pin of the chip U1 is connected to a 5V voltage source, and the 11th pin and the 17th pin of the chip U1 are grounded; Pins 12 and 13 of the chip U1 are both connected to the first end of the series magnetic bead inductor B1, and the second end of the magnetic bead inductor B1 is connected to a 5V voltage source; the first end of the magnetic bead inductor B1 is also connected to a grounding capacitor C9; Pin 30 of the chip U1 is connected in series with a resistor R10 and a light emitting diode D1 to ground; and pin 36 of the chip U1 outputs a PWM signal to a frequency generator.

6. A high-frequency surface acoustic wave atomization driver according to claim 5, characterized in that: The frequency generator includes a chip U2 of model AD9851; the 6th, 11th, 18th and 23rd pins of the chip U2 are all connected to a 5V voltage source, the 5th, 10th, 19th and 24th pins of the chip U2 are all grounded; the 9th pin of the chip U2 is connected to a crystal oscillator; Pin 12 of the chip U2 is connected to the drain of the MOS tube Q4, a source series resistor R22 of the MOS tube Q4 is grounded, and a gate series resistor R21 of the MOS tube Q4 is connected to pin 36 of the chip U1; Pins 1-4 and 25-28 of the chip U2 are connected to pins 43-47 and 2-4 of the chip U1 respectively; pin 21 of the chip U2 outputs a frequency signal to a high-frequency power amplifier.

7. A high-frequency surface acoustic wave atomization driver according to claim 6, characterized in that: The high-frequency power amplifier includes an amplifier Q1 with a signal of AG603-89; the pin 1 of the amplifier Q1 is connected in series with capacitor C23, inductor L3, L2, L1 to the pin 21 of the chip U2 in sequence; the pin 1 of the amplifier Q1 is also connected in series with resistor R5 to a 5V voltage source, and the pin 1 of the amplifier Q1 is also connected in series with resistor R4 to ground; Pin 2 of the amplifier Q1 is connected in series with a resistor R6 which is grounded, and both ends of the resistor R6 are connected in parallel with a capacitor C6; Pin 3 of the amplifier Q1 is connected in series with the inductor L5 and the resistor R17 to a 12V voltage source in sequence, and pin 3 of the amplifier Q1 is also connected in series with the resistor C28 to one end of the RF antenna base Z1, and the other end of the RF antenna base Z1 is grounded.

8. The high-frequency surface acoustic wave atomization driver according to claim 6, characterized in that: The two ends of the resistor R21 are connected to grounding capacitors C33 and C34 respectively; A capacitor C22 is connected in series between the drain and source of the MOS transistor Q4.

9. The high-frequency surface acoustic wave atomization driver according to claim 7, characterized in that: One end of the inductor L1 connected to the pin 21 of the chip U2 is also connected to a grounding capacitor C17 and a grounding resistor R5; the other end of the inductor L1 is connected to a grounding capacitor C19; A grounding capacitor C20 is connected to the middle connection point between the inductor L3 and the inductor L2; a grounding resistor R16 is connected to the middle connection point between the inductor L3 and the capacitor C23; A grounding capacitor C27 is connected to an intermediate connection point between the inductor L5 and the resistor R17.

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