Film thickness automatic detection device and solar cell production equipment

Abstract

The utility model relates to a film thickness automatic detection device and solar cell production equipment. The film thickness automatic detection device comprises a loading mechanism, an identification mechanism, a sampling mechanism and a detection mechanism. The loading mechanism is used for loading coated silicon wafers and detection sample wafers, the identification mechanism is used for detecting refractive indexes of the coated silicon wafers and the detection sample wafers on the loading mechanism, identifying the detection sample wafers according to different refractive indexes of the coated silicon wafers and the detection sample wafers and obtaining position information of the detection sample wafers, and the sampling mechanism is used for picking up the detection sample wafers according to the position information. The detection sample is conveyed to the detection mechanism, and the detection mechanism is used for detecting the thickness of a film layer on the detection sample. According to the film thickness automatic detection device and the solar cell production equipment, automatic identification, pickup and automatic detection of the detection sample can be realized, manpower is saved, the detection sample can be detected in time, and the production efficiency can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaics, in particular to an automatic film thickness detection device and solar cell production equipment. Background Art

[0002] In the production process of solar cells, it is necessary to detect the thickness of the film layer deposited on the silicon wafer. For example, for heterojunction cells, in order to obtain high efficiency, the PVD process parameters used for silicon wafers of different areas and thicknesses are also different, and the thickness of the plated TCO film (transparent conductive film) will vary with the different PVD process parameters. For example, the thickness of the TCO film plated on a silicon wafer with a thickness of 130μm is generally 105nm, and the thickness of the TCO film plated on a silicon wafer with a thickness of 110μm is generally 95nm. Therefore, it is necessary to monitor the thickness of the film layer on the silicon wafer and adjust the process in time to ensure the normal film thickness.

[0003] The traditional film thickness detection method is to place a 0.33mm thick glass sheet and a silicon wafer to be coated on a carrier, which is then loaded through the coating machine and stopped at the unloading station. The staff opens the safety door and takes the coated glass sheet as a test sample. During this process, the staff is required to record the movement of the carrier. However, this detection method is labor-intensive and is not conducive to improving production efficiency. Utility Model Content

[0004] Based on this, it is necessary to provide an automatic film thickness detection device and a solar cell production equipment to solve the problem that the traditional film thickness detection method consumes manpower.

[0005] A film thickness automatic detection device comprises a loading mechanism, an identification mechanism, a sampling mechanism and a detection mechanism;

[0006] The loading mechanism is used to load coated silicon wafers and test samples, the identification mechanism is used to detect the refractive index of the coated silicon wafer and the test sample on the loading mechanism, and identify the test sample according to the difference in refractive index between the coated silicon wafer and the test sample, and obtain the position information of the test sample, the sampling mechanism is used to pick up the test sample according to the position information, and send the test sample to the testing mechanism, and the testing mechanism is used to detect the thickness of the film layer on the test sample.

[0007] In one embodiment, the loading mechanism has a plurality of hollow loading areas distributed in an array.

[0008] In one embodiment, the identification mechanism includes a laser scanner.

[0009] In one of the embodiments, there are multiple laser scanners, and the multiple laser scanners are arranged side by side.

[0010] In one embodiment, the sampling mechanism includes a first picking component, a second picking component, a sample storage component, a first conveying component and a second conveying component; the first picking component is used to pick up the detection sample on the loading mechanism and send it to the sample storage component, the second picking component is used to separate the detection sample on the sample storage component into a positive film sample and a back film sample, and send the positive film sample and the back film sample to the first conveying component and the second conveying component respectively, and the first conveying component and the second conveying component are used to convey the positive film sample and the back film sample to the detection mechanism respectively.

[0011] In one embodiment, the second picking component includes a reversible mechanical arm and a suction component, and the suction component is disposed on the reversible mechanical arm.

[0012] In one embodiment, the detection mechanism includes an ellipsometer.

[0013] In one embodiment, the automatic film thickness detection device also includes a recovery and conveying mechanism and a film layer cleaning mechanism, wherein the recovery and conveying mechanism is used to send the detection sample detected by the detection mechanism to the film layer cleaning mechanism, and the film layer cleaning mechanism is used to clean the film layer on the detection sample.

[0014] In one embodiment, the film removal mechanism includes a cleaning tank.

[0015] A solar cell production device comprises a coating device and an automatic film thickness detection device as described in any one of the above embodiments, wherein the automatic film thickness detection device is used to detect the thickness of a film layer coated by the coating device.

[0016] Compared with the traditional solution, the above-mentioned film thickness automatic detection device and solar cell production equipment have the following beneficial effects:

[0017] The above-mentioned automatic film thickness detection device and solar cell production equipment detect the refractive index of the test coated silicon wafer and the test sample on the loading mechanism through the identification mechanism. Since the coated silicon wafer and the test sample are different, the test sample can be identified, and then the position information of the test sample can be obtained. The sampling mechanism picks up the test sample according to the position information and sends it to the detection mechanism for thickness detection. The above-mentioned automatic film thickness detection device and solar cell production equipment can realize automatic identification, picking up and automatic detection of the test sample, saving manpower, and the test sample can also be detected in time, which is conducive to improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of a partial structure of an automatic film thickness detection device according to an embodiment;

[0019] Figure 2 for Figure 1 Another partial structural schematic diagram of the film thickness automatic detection device shown;

[0020] Figure 3 for Figure 1 The structural schematic diagram of the identification mechanism in the film thickness automatic detection device shown;

[0021] Figure 4 for Figure 1 Another partial structural schematic diagram of the automatic film thickness detection device shown.

[0022] Description of reference numerals:

[0023] 100, automatic film thickness detection device; 110, loading mechanism; 111, hollow loading area; 120, identification mechanism; 121, laser scanner; 122, mounting seat; 130, sampling mechanism; 131, first picking component; 132, second picking component; 1322, reversible mechanical arm; 1324, adsorption component; 133, sample storage component; 134, first conveying component; 135, second conveying component; 150, detection mechanism; 151, ellipsometer; 152, detection platform; 153, mass spectrometer; 160, bracket; 170, recovery and conveying mechanism; 171, third picking component; 1712, lifting slide rail; 1714, telescopic arm; 1716, suction cup; 172, third conveying component; 180, film layer removal mechanism; 190, recovery and storage mechanism; 20, detection sample; 21, positive film sample; 22, back film sample. DETAILED DESCRIPTION

[0024] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0026] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0027] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0028] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0029] In the process of solar cell production, it is necessary to test the thickness of the film deposited on the silicon wafer. During coating, the glass wafer and the silicon wafer to be coated are passed through the coating machine together. After the silicon wafer is coated, the coated silicon wafer is obtained. After the glass wafer is coated, the test sample is obtained. The film thickness on the test sample is tested to obtain the film thickness on the coated silicon wafer.

[0030] The utility model provides an automatic film thickness detection device, which can automatically identify a detection sample and detect the thickness of the film layer on the sample.

[0031] Combination Figure 1 and Figure 2 As shown, an automatic film thickness detection device 100 according to an embodiment includes a loading mechanism 110 , an identification mechanism 120 , a sampling mechanism 130 and a detection mechanism 150 .

[0032] The loading mechanism 110 is used to load the coated silicon wafers and the test samples 20. The coated silicon wafers and the test samples 20 are arranged on the loading mechanism 110 in an array distribution manner, for example.

[0033] The identification mechanism 120 is used to detect the refractive index of the test coated silicon wafer and the test sample 20 on the loading mechanism 110. Since the refractive index of the coated silicon wafer is different from that of the test sample 20, for example, the refractive index of the coated silicon wafer is 2.3, and the refractive index of the test sample 20 is 1.47-1.7, the identification mechanism 120 can identify the test sample 20 according to the difference in the refractive index between the coated silicon wafer and the test sample 20, and then can obtain the position information of the test sample 20.

[0034] The sampling mechanism 130 is used to pick up the test sample 20 according to the position information and send the test sample 20 to the testing mechanism 150. The testing mechanism 150 is used to detect the thickness of the film layer on the test sample 20.

[0035] like Figure 1 As shown, in some examples, the loading mechanism 110 has a plurality of hollow loading areas 111 distributed in an array. The plurality of hollow loading areas 111 are distributed in a 6×9 array, for example. The coated silicon wafers and the test samples 20 are arranged in an array distribution on the loading mechanism 110 .

[0036] like Figure 3 As shown, in some examples, the identification mechanism 120 includes a laser scanner 121 .

[0037] Optionally, the number of laser scanners 121 is not limited to only one, and there may be multiple, for example, 2 to 20. Multiple laser scanners 121 are provided to be responsible for detecting different areas. Figure 3 As shown, a plurality of laser scanners 121 are disposed together on a mounting base 122 .

[0038] In some examples, multiple laser scanners 121 are arranged side by side. For example, the arrangement direction of the multiple laser scanners 121 is perpendicular to the travel direction of the loading mechanism 110. More specifically, the multiple laser scanners 121 are arranged side by side along a first direction, and the loading mechanism 110 travels along a second direction, and the first direction is perpendicular to the second direction. Further, the number of laser scanners 121 is consistent with the number of rows or columns of the hollow loading area 111 on the loading mechanism 110, for example, the number of laser scanners 121 is 9, and the number of columns of the hollow loading area 111 is also 9.

[0039] In addition, the laser scanner 121 may also be configured to be movable, for example, the mounting base 122 for mounting the laser scanner 121 may be movably connected to the bracket 160. Furthermore, the arrangement direction of the plurality of laser scanners 121 is perpendicular to the moving direction of the laser scanner 121.

[0040] When coating the front and back of the silicon wafer at the same time, two glass sheets can be stacked and coated on both sides together with the silicon wafer. The test sample 20 obtained by coating can be separated into a front film sample 21 and a back film sample 22, which are used to detect the thickness of the front film layer and the thickness of the back film layer respectively.

[0041] like Figure 1 and Figure 2 As shown, in some examples, the sampling mechanism 130 includes a first picking component 131, a second picking component 132, a sample storage component 133, a first conveying component 134, and a second conveying component 135. The first picking component 131 is used to pick up the test sample 20 on the loading mechanism 110 and send it to the sample storage component 133.

[0042] The second picking component 132 is used to separate the detection sample 20 on the sample storage component 133 into the positive film sample 21 and the back film sample 22. For example, the second picking component 132 separates the detection sample 20 into the positive film sample 21 and the back film sample 22 by controlling the adsorption force. The second picking component 132 is also used to send the positive film sample 21 and the back film sample 22 to the first conveying component 134 and the second conveying component 135 respectively. The first conveying component 134 and the second conveying component 135 are used to respectively convey the positive film sample 21 and the back film sample 22 to the detection mechanism 150.

[0043] like Figure 2 As shown, in some examples, the second picking component 132 includes a reversible mechanical arm 1322 and a suction piece 1324, and the suction piece 1324 is disposed on the reversible mechanical arm 1322. The reversible mechanical arm 1322 is turned over by a rotating shaft to turn over the back film sample 22 so that the coated layer faces upward for subsequent detection.

[0044] In some examples, first conveying member 134 and / or second conveying member 135 are conveyor belts.

[0045] like Figure 2 and Figure 4 As shown, in some examples, the detection mechanism 150 includes an ellipsometer 151. The ellipsometer 151 can detect the thickness of the micro-nano film layer.

[0046] In some examples, the detection mechanism 150 includes a detection platform 152. The detection platform 152 is used to place the detection sample 20 for film thickness detection. Further, the detection platform 152 has adsorption holes to fix the detection sample 20 by vacuum adsorption.

[0047] In some examples, the detection mechanism 150 includes a mass spectrometer 153, and the mass spectrometer 153 is connected to the ellipsometer 151. After being refracted multiple times by the mass spectrometer 153, the detection light source is input into the ellipsometer 151 for detection.

[0048] like Figure 2 and Figure 4 As shown, in some examples, the automatic film thickness detection device 100 further includes a recycling conveying mechanism 170 and a film layer removing mechanism 180. The recycling conveying mechanism 170 is used to send the detection sample 20 detected by the detection mechanism 150 to the film layer removing mechanism 180, and the film layer removing mechanism 180 is used to remove the film layer on the detection sample 20. In this way, the automatic film thickness detection device 100 can automatically remove the film layer plated on the detection sample 20, and the obtained glass piece can be recycled to reduce costs.

[0049] like Figure 4 As shown, in some examples, the recovery conveying mechanism 170 includes a third picking component 171. Further, the recovery conveying mechanism 170 also includes a third conveying component 172. The third picking component 171 is used to convey the test sample 20 detected by the detection mechanism 150 to the third conveying component 172, and the third conveying component 172 is used to convey the test sample 20 to the film layer removing mechanism 180.

[0050] In some examples, the third picking component 171 includes a lifting rail 1712 , a telescopic arm 1714 , and a suction cup 1716 . The telescopic arm 1714 slidably cooperates with the lifting rail 1712 , and the suction cup 1716 is disposed on the telescopic arm 1714 .

[0051] In some examples, third conveying member 172 is a conveyor belt.

[0052] The film layer removal mechanism 180 includes a cleaning tank. The cleaning tank is used to contain a cleaning liquid. For the removal of the TCO film layer, the cleaning liquid may be, for example, a mixed solution of nitric acid and hydrofluoric acid. The concentration of nitric acid is, for example, 14 mol / L to 17 mol / L, the concentration of hydrofluoric acid is, for example, 26 mol / L to 29 mol / L, and the mass ratio of nitric acid to hydrofluoric acid is, for example, 2:1. After the glass sheet is obtained by pickling, water may also be used as a cleaning liquid to wash the glass sheet.

[0053] Furthermore, in some examples, the automatic film thickness detection device 100 further includes a drying mechanism (not shown in the figure). In these examples, the recovery and conveying mechanism 170 is also used to convey the cleaned glass sheet to the drying mechanism, which is used to dry the glass sheet.

[0054] Furthermore, in some examples, the automatic film thickness detection device 100 further includes a recycling and storage mechanism 190. In these examples, the recycling and conveying mechanism 170 is also used to convey the glass sheets to the recycling and storage mechanism 190 for storage for reuse.

[0055] Furthermore, the utility model also provides a solar cell production device.

[0056] A solar cell production device according to an embodiment includes a coating device and any of the above-mentioned automatic film thickness detection devices 100. The automatic film thickness detection device 100 is used to detect the thickness of the film layer coated by the coating device.

[0057] The working process of the solar cell production equipment of one embodiment is as follows:

[0058] At the loading place of the coating device, the silicon wafer to be coated and two glass sheets are placed on the loading mechanism 110 by mechanical suction cups, and the silicon wafer to be coated and the glass sheets are arranged in an array. The loading mechanism 110 enters the coating device for double-sided coating to obtain coated silicon wafers and test samples 20.

[0059] At the unloading point of the coating device, the loading mechanism 110 loads the coated silicon wafer and the test sample 20 and moves along the second direction. A plurality of laser scanners 121 are arranged side by side along a first direction perpendicular to the second direction. During the movement of the loading mechanism 110, the coated silicon wafer and the test sample 20 are scanned to obtain the refractive index. Since the coated silicon wafer is different from the test sample 20, the test sample 20 can be identified based on the difference in the refractive index between the coated silicon wafer and the test sample 20, and then the position information of the test sample 20 can be obtained.

[0060] The first picking component 131 picks up the test sample 20 according to the position information of the test sample 20 and sends it to the sample storage component 133. The second picking component 132 separates the test sample 20 on the sample storage component 133 into the positive film sample 21 and the back film sample 22 by controlling the adsorption force, and sends the positive film sample 21 and the back film sample 22 to the first conveying component 134 and the second conveying component 135 respectively. The first conveying component 134 and the second conveying component 135 convey the positive film sample 21 and the back film sample 22 to the detection platform 152 respectively. The ellipsometer 151 detects the film thickness of the positive film sample 21 and the back film sample 22.

[0061] The recovery conveying mechanism 170 delivers the test sample 20 tested by the testing mechanism 150 to the film layer removing mechanism 180, and removes the film layer on the test sample 20 through acid washing and water washing. Subsequently, the recovery conveying mechanism 170 delivers the cleaned glass sheet to the drying mechanism for drying, and then delivers it to the recovery storage mechanism 190 for storage.

[0062] The above-mentioned automatic film thickness detection device 100 and solar cell production equipment have the following technical advantages:

[0063] 1. Automatic identification, picking up and automatic testing of the test sample 20 can be realized, which saves manpower and avoids the safety risks caused by the need for personnel to enter the machine to operate. The test sample 20 can be tested in time, which is conducive to improving production efficiency.

[0064] 2. The different refractive indices between the coated silicon wafer and the test sample 20 are used to identify the test sample 20. When loading, the glass sheet can be placed arbitrarily and is no longer limited to a single position. The arbitrary placement of the glass sheet is conducive to more accurate monitoring of the film thickness and convenient monitoring of the film thickness change.

[0065] 3. The film layer of the test sample 20 that has completed the test is automatically removed, and the glass piece can be recycled and reused, thereby reducing production costs.

[0066] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0067] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims, and the description can be used to interpret the content of the claims.

Claims

1. A film thickness automatic detection device (100), characterized in that: It comprises a loading mechanism (110), an identification mechanism (120), a sampling mechanism (130) and a detection mechanism (150); The loading mechanism (110) is used to load the coated silicon wafer and the test sample (20); the identification mechanism (120) is used to detect the refractive index of the coated silicon wafer and the test sample (20) on the loading mechanism (110), and identify the test sample (20) according to the difference in refractive index between the coated silicon wafer and the test sample (20), and obtain the position information of the test sample (20); the sampling mechanism (130) is used to pick up the test sample (20) according to the position information, and send the test sample (20) to the testing mechanism (150); the testing mechanism (150) is used to detect the thickness of the film layer on the test sample (20).

2. The automatic film thickness detection device (100) according to claim 1, characterized in that: The loading mechanism (110) has a plurality of hollow loading areas (111) distributed in an array.

3. The automatic film thickness detection device (100) according to claim 1 or 2, characterized in that: The identification mechanism (120) comprises a laser scanner (121).

4. The automatic film thickness detection device (100) according to claim 3, characterized in that: There are multiple laser scanners (121), and the multiple laser scanners (121) are arranged side by side.

5. The automatic film thickness detection device (100) according to claim 1, 2 or 4, characterized in that: The sampling mechanism (130) comprises a first picking-up component (131), a second picking-up component (132), a sample storage component (133), a first conveying component (134) and a second conveying component (135); the first picking-up component (131) is used to pick up the detection sample (20) on the loading mechanism (110) and send it to the sample storage component (133); the second picking-up component (132) is used to separate the detection sample (20) on the sample storage component (133) into a positive film sample (21) and a back film sample (22), and send the positive film sample (21) and the back film sample (22) to the first conveying component (134) and the second conveying component (135) respectively; the first conveying component (134) and the second conveying component (135) are used to convey the positive film sample (21) and the back film sample (22) to the detection mechanism (150) respectively.

6. The automatic film thickness detection device (100) according to claim 5, characterized in that: The second picking component (132) comprises a reversible mechanical arm (1322) and a suction piece (1324), wherein the suction piece (1324) is arranged on the reversible mechanical arm (1322).

7. The automatic film thickness detection device (100) according to claim 1, 2, 4 or 6, characterized in that: The detection mechanism (150) comprises an ellipsometer (151).

8. The automatic film thickness detection device (100) according to claim 1, 2, 4 or 6, characterized in that: The automatic film thickness detection device (100) further comprises a recovery and conveying mechanism (170) and a film layer cleaning mechanism (180), wherein the recovery and conveying mechanism (170) is used to convey the detection sample (20) detected by the detection mechanism (150) to the film layer cleaning mechanism (180), and the film layer cleaning mechanism (180) is used to clean the film layer on the detection sample (20).

9. The automatic film thickness detection device (100) according to claim 8, characterized in that: The film layer cleaning mechanism (180) comprises a cleaning tank.

10. A solar cell production equipment, characterized in that: It comprises a film coating device and an automatic film thickness detection device (100) according to any one of claims 1 to 9, wherein the automatic film thickness detection device (100) is used to detect the thickness of a film layer coated by the film coating device.

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