Silicon wafer side edge detection device and detection line

Abstract

The utility model relates to the technical field of silicon wafer production and detection, in particular to a silicon wafer side edge detection device and a detection line, which comprise a support, a detection mechanism and N conveying lines which are arranged below the support and are used for bearing silicon wafers, the detection mechanism comprises N + 1 cameras and optical lenses which are arranged right below the cameras, N is greater than or equal to 2, and N is greater than or equal to 1. The optical lens located between the conveying lines is a double-reflection prism and is provided with at least two cameras for reflecting silicon wafers on the two sides of the optical lens to the upper portion, and the optical lens located on the outer sides of the conveying lines is a single-reflection prism and is provided with at least one camera for reflecting silicon wafers on one side of the optical lens to the upper portion. According to the utility model, a corner imaging principle is utilized, left and right lateral collapse is integrated, the cost of a camera and the layout space of the whole device are reduced, and the problem that independent measurement sources and optical light sources cannot be deployed for detection because the distance between silicon wafers is too small is solved.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon wafer production detection, in particular to a silicon wafer side edge detection device and a detection line. Background Art

[0002] The manufacture of silicon wafers involves multiple steps, including raw material preparation, melting, injection, cutting, polishing, cleaning and testing. Before silicon wafers are made into battery cells, they need to undergo a series of defect tests, one of which requires testing the side edges of the silicon wafers. The conventional method is to deploy separate measurement sources and optical light sources on both sides of the silicon wafer for testing. This method not only has low detection efficiency, but also occupies a large space. For this reason, the utility model proposes a silicon wafer side detection device and detection line to optimize the detection process of the side edges of silicon wafers. Utility Model Content

[0003] In order to solve the above technical problems, the utility model provides a silicon wafer side detection device and detection line, in which silicon wafers are conveyed simultaneously by at least two conveyor lines, and a double reflection prism is arranged between the conveyor lines. For the two facing surfaces of the silicon wafers between the conveyor lines, the double reflection prism can be used to simultaneously reflect them to the same camera for detection, and the principle of corner imaging is used to integrate left and right side collapse.

[0004] In the first aspect, the present scheme provides a silicon wafer side detection device, including a bracket and a detection mechanism connected to the bracket, and also including N conveyor lines located below the bracket for carrying silicon wafers, the detection mechanism includes N+1 cameras and optical lenses located directly below each camera, wherein N≥2, and the optical lenses are used to refract light from the sides of the silicon wafer and reflect it to the camera, wherein the optical lenses located between the conveyor lines are double-reflection prisms, having at least two reflection surfaces to reflect the silicon wafers on both sides thereof to the camera above, and the optical lenses located outside the conveyor lines are single-reflection prisms, having at least one reflection surface to reflect the silicon wafers on one side thereof to the camera above.

[0005] The technical solution further defined in the utility model is:

[0006] Furthermore, the double reflection prism and the single reflection prism are located on the same horizontal plane, and the reflection surface of the double reflection prism and / or the single reflection prism forms an angle of forty-five degrees with the horizontal plane.

[0007] Furthermore, the double reflection prism and the single reflection prism are both triangular prisms in the form of isosceles right triangles.

[0008] Furthermore, it also includes a light source component that provides light source for silicon wafers on the conveyor line.

[0009] Furthermore, the light source assembly is mounted on a bracket and is located between the camera and the conveyor line.

[0010] Furthermore, the light source assembly includes a box body and a linear light source located in the box body.

[0011] Furthermore, a through slot is provided in the middle of the box body to provide a passage for reflected light, and two line light sources are provided and symmetrically arranged in the box body and tilted downward toward the silicon wafers on the conveyor line.

[0012] In a second aspect, the utility model further provides a detection line, comprising the silicon wafer side detection device described in any one of the first aspects, to achieve efficient detection of the silicon wafer side.

[0013] The beneficial effects of the utility model are as follows: the silicon wafer side detection device and the detection line having the same provided by the utility model simultaneously convey silicon wafers through at least two conveyor lines, and a double reflection prism is arranged between the conveyor lines. For the two facing surfaces of the silicon wafers between the conveyor lines, the double reflection prism can be used to simultaneously reflect to the same camera for detection, and the left and right side edges are integrated by utilizing the principle of corner imaging, thereby reducing the cost of the camera and the layout space of the entire device, and multiple groups of conveyor lines can be synchronously detected, thus solving the problem that the distance between silicon wafers is too small to deploy a separate measurement source and an optical light source for detection; in addition, the utility model arranges two linear light sources symmetrically in the box body, and the light path illuminates from multiple angles, which can more effectively distinguish the defect feature imaging from the silicon wafer itself, thereby greatly improving the detection efficiency. Compared with a single light source, the recognition and accuracy of the detection object are higher. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a schematic diagram of the structure of a silicon wafer side edge detection device in an embodiment of the utility model;

[0015] Figure 2 for Figure 1 Enlarged view of point A in the middle;

[0016] Figure 3 This is a schematic diagram of the front structure of the silicon wafer side edge detection device in the embodiment of the utility model;

[0017] Figure 4 This is a schematic diagram of the principle of the silicon wafer side edge detection device in the embodiment of the utility model;

[0018] Figure 5 This is a structural schematic diagram of a light source assembly in another embodiment of the utility model;

[0019] Figure 6 This is a schematic diagram of the light path of a light source assembly in another embodiment of the utility model;

[0020] Among them: 10, bracket; 20, detection mechanism; 21, first camera; 22, second camera; 23, third camera; 24, single reflection prism; 25, double reflection prism; 26, reflected light; 30, conveyor line; 40, light source assembly; 41, line light source; 50, silicon wafer. DETAILED DESCRIPTION

[0021] like Figure 1 As shown, a silicon wafer side detection device provided in this embodiment includes a bracket 10, and a detection mechanism 20 is connected to the bracket 10 to form a gate-type detection device. A light source assembly 40 is also connected to the bracket 10 directly below the detection mechanism 20 to provide a light source for the detection mechanism 20. There are two parallel conveying lines 30 located below the light source assembly 40 and the detection mechanism 20, both of which are used to convey silicon wafers 50. The distance between the silicon wafers 50 on the two conveying lines 30 is 18 mm, and the silicon wafers 50 on the conveying lines 30 pass through the detection mechanism 20 in sequence.

[0022] See also Figure 2 and Figure 3 The detection mechanism 20 in this embodiment is specifically installed on the bracket 10 through a mounting seat, and the first camera 21, the second camera 22 and the third camera 23 located at the same height are sequentially installed on the mounting seat. The detection mechanism 20 also includes two single reflection prisms 24 and a double reflection prism 25 installed on the two conveyor lines 30, wherein the double reflection prism 25 is located directly below the second camera 22, and the two single reflection prisms 24 are respectively located directly below the first camera 21 and the third camera 23. Figure 4 As shown, the double reflection prism 25 is located between the conveyor lines 30 to simultaneously reflect the opposite sides of the silicon wafers 50 on the two conveyor lines 30 to the camera, and the single reflection prism 24 is used to reflect the outer side of the silicon wafer 50 to the camera, so as to achieve the effect of using the double reflection prism 25 to simultaneously reflect the side edges of the two silicon wafers to the same camera for detection. This embodiment takes two conveyor lines 30 as an example. In other implementations, the conveyor lines 30 can be three or more, and the optical lenses between the conveyor lines 30 are all double reflection prisms 25, and the optical lenses on the outside of the conveyor lines 30 on both sides are all single reflection prisms 24.

[0023] It should be noted that, in the present embodiment, the double reflection prism 25 and the single reflection prism 24 are triangular prisms with isosceles right triangle cross-sections. The double reflection prism 25 reflects light from the horizontal direction through two reflection surfaces and refracts upward, and the single reflection prism 24 reflects light from the horizontal direction through one reflection surface and refracts upward. Their reflection surfaces are forty-five degrees to the horizontal plane, so that the refraction angles are both ninety degrees. In some other implementations, the shapes of the double reflection prism 25 and the single reflection prism 24 can also be changed to a certain extent, as long as each can reflect horizontal light upward to the camera.

[0024] In this embodiment, the light source assembly 40 is composed of a box body and a linear light source 41 loaded in the box body. A through notch is provided in the middle of the box body to provide a passage for the reflected light 26 .

[0025] In some other embodiments, Figure 5-6 As shown, taking a second camera 22 as an example, the light source assembly 40 is provided with two line light sources 41, which are symmetrically arranged in the box body and tilted downward at a certain angle toward the silicon wafer 50 on the conveyor line 30. The light path irradiates from multiple angles to more effectively distinguish the defect feature imaging from the silicon wafer itself, greatly improving the detection efficiency. Compared with a single light source, the light source assembly 40 of this embodiment has a higher recognition degree for the detection object, more accurate detection accuracy, better compatibility with products, and can also reduce interference factors such as color difference and impurities on the surface of the silicon wafer 50.

[0026] The utility model also provides a detection line for detecting data of each surface of the silicon wafer 50 . The detection line has the silicon wafer side edge detection device described in the above embodiment. The silicon wafer side edge detection device is installed on the detection line to specifically detect the side of the silicon wafer 50 .

[0027] In addition to the above embodiments, the present invention may also have other implementation modes; any technical solutions formed by equivalent replacement or equivalent transformation shall fall within the protection scope required by the present invention.

Claims

1. A silicon wafer side edge detection device, comprising a support (10) and a detection mechanism (20) connected to the support (10), characterized in that: It also includes N conveyor lines (30) located below the support (10) for carrying silicon wafers (50), the detection mechanism (20) including N+1 cameras and an optical lens located directly below each camera, wherein N≥2, and the optical lens is used to refract light from the side of the silicon wafer (50) and reflect it to the camera, wherein the optical lens located between the conveyor lines (30) is a double reflection prism (25) having at least two reflection surfaces for reflecting the silicon wafers (50) on both sides thereof to the camera above, and the optical lens located outside the conveyor line (30) is a single reflection prism (24) having at least one reflection surface for reflecting the silicon wafer (50) on one side thereof to the camera above.

2. The silicon wafer side edge detection device according to claim 1, characterized in that: The double reflection prism (25) and the single reflection prism (24) are located on the same horizontal plane, and the reflection surface of the double reflection prism (25) and / or the single reflection prism (24) forms an angle of forty-five degrees with the horizontal plane.

3. The silicon wafer side edge detection device according to claim 1, characterized in that: The double reflection prism (25) and the single reflection prism (24) are both triangular prisms in the form of isosceles right triangles.

4. The silicon wafer side edge detection device according to claim 1, characterized in that: It also includes a light source assembly (40) for providing a light source for the silicon wafer (50) on the conveying line (30).

5. The silicon wafer side edge detection device according to claim 4, characterized in that: The light source assembly (40) is mounted on the bracket (10) and is located between the camera and the conveyor line (30).

6. The silicon wafer side edge detection device according to claim 4, characterized in that: The light source assembly (40) comprises a box body and a linear light source (41) located in the box body.

7. The silicon wafer side edge detection device according to claim 6, characterized in that: A through notch is provided in the middle of the box body to provide a passage for reflected light. Two line light sources (41) are provided and symmetrically arranged in the box body and are simultaneously tilted downward toward the silicon wafer (50) on the conveyor line (30).

8. A detection line, characterized in that: The invention comprises a silicon wafer side edge detection device as claimed in any one of claims 1 to 7.

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