Band-gap reference voltage source circuit and electronic equipment

Abstract

The utility model discloses a band-gap reference voltage source circuit and electronic equipment, which are applied to the field of integrated circuit design. Wherein the grid electrode of the first MOS tube is connected with the grid electrode of the second MOS tube, the grid electrode of the third MOS tube and the first end of the starting circuit; the source electrode of the first MOS tube is connected with the source electrode of the second MOS tube, the drain electrode of the third MOS tube, the second end of the starting circuit and the power supply end; the drain electrode of the first MOS tube is connected with the collector electrode of the first triode; the drain electrode of the second MOS tube is connected with the collector electrode of the second triode; the base electrode of the first triode is connected with the base electrode of the second triode and the source electrode of the third MOS tube; and the emitter of the first triode and the emitter of the second triode are connected with the third end of the starting circuit and are grounded. Therefore, the feedback circuit maintains the stability of the voltage value between the two triodes, and improves the power supply rejection ratio; meanwhile, the precision of the output voltage is improved, and the consumption cost is reduced.

Description

Technical Field

[0001] The utility model relates to the field of integrated circuit design, in particular to a bandgap reference voltage source circuit and electronic equipment. Background Art

[0002] The reference voltage source is one of the most basic analog units in integrated circuit design. It can provide a reference voltage that does not change with temperature or power supply voltage for other modules of the system. It is widely used in amplifiers, analog-to-digital converters, digital-to-analog converters, radio frequency, sensors and power management chips.

[0003] In recent years, the reference voltage source is usually a bandgap reference circuit with a bipolar transistor. Among them, there are degeneracy points in the bandgap reference circuit. Therefore, when the bandgap reference circuit is used, an additional startup circuit is required to eliminate the existence of the degeneracy point. In addition, the fluctuation of the power supply voltage will also affect the accuracy of the bandgap reference voltage. Therefore, an external linear regulator is required to supply power to the bandgap reference circuit separately to improve the power supply rejection ratio of the bandgap reference circuit. Based on this, the current traditional bandgap reference circuit is generally divided into an op amp bandgap reference circuit and an op amp-free bandgap reference circuit. Among them, the bandgap reference circuit with an op amp structure often uses the "virtual short" characteristic of the op amp itself to clamp the circuit, but its own op amp function will make the accuracy of the bandgap reference circuit output affected by the op amp offset voltage, and at the same time increase the complexity of the design, consume more power, and introduce new noise. The traditional bandgap reference circuit without an op amp structure clamps the circuit through a current mirror, thereby avoiding the use of an op amp, but due to the channel modulation effect of its own device, the output voltage accuracy of the bandgap reference circuit under this structure is not high, and the temperature coefficient is often large.

[0004] In view of the above technology, seeking a bandgap reference voltage source circuit is an urgent problem to be solved by those skilled in the art. Utility Model Content

[0005] The purpose of the utility model is to provide a bandgap reference voltage source circuit and electronic equipment, which can solve the problems of low precision, increased consumption and cost caused by the operational amplifier structure of the original bandgap reference circuit in the prior art, and can also solve the problem of low output voltage precision of the original bandgap reference circuit itself in the prior art.

[0006] In order to solve the above technical problems, the utility model provides a bandgap reference voltage source circuit, comprising: a start-up circuit and a bandgap reference circuit and a feedback circuit, wherein the bandgap reference circuit and the feedback circuit comprise: a first MOS tube, a second MOS tube, a third MOS tube, a first triode and a second triode; the first MOS tube, the second MOS tube, the first triode and the second triode constitute a bandgap reference circuit; the first MOS tube, the first triode and the third MOS tube constitute a feedback circuit;

[0007] The gate of the first MOS tube is connected to the gate of the second MOS tube, the gate of the third MOS tube and the first end of the startup circuit; the source of the first MOS tube is connected to the source of the second MOS tube, the drain of the third MOS tube, the second end of the startup circuit and the power supply end; the drain of the first MOS tube is connected to the collector of the first triode;

[0008] The drain of the second MOS tube is connected to the collector of the second triode;

[0009] The base of the first triode is connected to the base of the second triode and the source of the third MOS tube;

[0010] The emitter of the first transistor is connected to the emitter of the second transistor and the third end of the start-up circuit and is grounded.

[0011] Preferably, the bandgap reference circuit further comprises: a power supply circuit;

[0012] Wherein, the first end of the power circuit is connected to the source of the first MOS tube, and the second end of the power circuit is connected to the source of the second MOS tube;

[0013] The third end of the power circuit is connected to the fourth end of the power circuit, the drain of the third MOS tube, the second end of the start-up circuit and the power end.

[0014] Preferably, the power supply circuit comprises: a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube;

[0015] The gate of the fourth MOS tube, the gate of the fifth MOS tube, the gate of the sixth MOS tube, the gate of the seventh MOS tube and the drain of the seventh MOS tube are connected to the source of the second MOS tube as the second end of the power circuit;

[0016] The source of the fourth MOS tube is connected to the source of the fifth MOS tube, the second end of the startup circuit and the power supply end, wherein the source of the fourth MOS tube serves as the third end of the power supply circuit, and the source of the fifth MOS tube serves as the fourth end of the power supply circuit;

[0017] The drain of the fourth MOS tube is connected to the source of the sixth MOS tube;

[0018] The drain of the fifth MOS tube is connected to the source of the seventh MOS tube;

[0019] The drain of the sixth MOS tube is connected to the source of the first MOS tube as the first end of the power circuit.

[0020] Preferably, the bandgap reference circuit further comprises: a first resistor, a second resistor and a third resistor;

[0021] Wherein, the first end of the first resistor is connected to the base of the first transistor and the source of the third MOS transistor, and the second end of the first resistor is connected to the base of the second transistor;

[0022] The first end of the second resistor is connected to the emitter of the second transistor and the second end of the start-up circuit, and the second end of the second resistor is connected to the emitter of the first transistor and the first end of the third resistor;

[0023] A second terminal of the third resistor is grounded.

[0024] Preferably, the feedback circuit further includes: an eighth MOS tube;

[0025] The drain of the eighth MOS tube is connected to the gate of the third MOS tube, the gate of the first MOS tube, the gate of the second MOS tube and the first end of the startup circuit; the gate of the eighth MOS tube and the source of the eighth MOS tube are grounded.

[0026] Preferably, the feedback circuit further comprises: a first capacitor, a second capacitor and a fourth resistor;

[0027] Wherein, the first end of the first capacitor is connected to the first end of the second capacitor, the first end of the fourth resistor, the source of the third MOS tube and the base of the first transistor;

[0028] The second end of the first capacitor is connected to the second end of the second capacitor and the second end of the fourth resistor, and is grounded.

[0029] Preferably, the feedback circuit further comprises: a third capacitor;

[0030] The first end of the third capacitor is connected to the gate of the third MOS tube, the gate of the first MOS tube and the gate of the second MOS tube; the second end of the third capacitor is grounded.

[0031] Preferably, the startup circuit includes: a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a third triode and a fourth triode;

[0032] The source of the ninth MOS tube, the source of the tenth MOS tube and the source of the eleventh MOS tube are connected to the power supply terminal as the second end of the startup circuit; the gate of the ninth MOS tube is grounded; the drain of the ninth MOS tube is connected to the collector of the third triode, the base of the third triode and the base of the fourth triode;

[0033] The gate of the tenth MOS tube is connected to the gate of the eleventh MOS tube, the drain of the tenth MOS tube and the collector of the fourth transistor;

[0034] The drain of the eleventh MOS tube is connected to the gate of the first MOS tube, the gate of the second MOS tube and the gate of the third MOS tube as the second end of the startup circuit;

[0035] The emitter of the third transistor is grounded;

[0036] The emitter of the fourth transistor is connected to the emitter of the second transistor as the third end of the start-up circuit.

[0037] Preferably, the starting circuit further comprises: a fifth resistor;

[0038] The first end of the fifth resistor is connected to the drain of the ninth MOS transistor, and the second end of the fifth resistor is connected to the collector of the third triode, the base of the third triode and the base of the fourth triode.

[0039] In order to solve the above technical problems, the present application also provides an electronic device, comprising the above bandgap reference voltage source circuit

[0040] The utility model provides a bandgap reference voltage source circuit, comprising a start-up circuit, a bandgap reference circuit and a feedback circuit, wherein the bandgap reference circuit and the feedback circuit comprise: a first MOS tube, a second MOS tube, a third MOS tube, a first triode and a second triode; the first MOS tube, the second MOS tube, the first triode and the second triode constitute a bandgap reference circuit; the first MOS tube, the first triode and the third MOS tube constitute a feedback circuit; wherein the gate of the first MOS tube is connected with the gate of the second MOS tube, the gate of the third MOS tube and a first end of the start-up circuit; the source of the first MOS tube is connected with the source of the second MOS tube, the drain of the third MOS tube, the second end of the start-up circuit and a power supply end; the drain of the first MOS tube is connected with the collector of the first triode; the drain of the second MOS tube is connected with the collector of the second triode; the base of the first triode is connected with the base of the second triode and the source of the third MOS tube; the emitter of the first triode is connected with the emitter of the second triode and the third end of the start-up circuit and is grounded. It can be seen that in the present application, the feedback circuit maintains the stability of the voltage value between the first triode and the second triode, and improves the power supply rejection ratio; at the same time, the device in the feedback circuit is also used for clamping, and no other devices need to be set up, thereby simplifying the circuit. At the same time, the structure in the present application improves the output voltage accuracy and reduces the consumption cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the present utility model, the following is a brief introduction to the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0042] Figure 1 A bandgap reference voltage source circuit provided in an embodiment of the present application;

[0043] Figure 2 A power supply rejection ratio curve diagram provided in an embodiment of the present application. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of them. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the protection scope of the utility model.

[0045] The core of the utility model is to provide a bandgap reference voltage source circuit and electronic equipment.

[0046] In order to enable those skilled in the art to better understand the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0047] Figure 1 A bandgap reference voltage source circuit provided in an embodiment of the present application, as shown in the figure, includes: a startup circuit, a bandgap reference circuit and a feedback circuit, wherein the bandgap reference circuit and the feedback circuit include: a first MOS tube P1, a second MOS tube P2, a third MOS tube P3, a first triode Q1 and a second triode Q2; the first MOS tube P1, the second MOS tube P2, the first triode Q1 and the second triode Q2 constitute a bandgap reference circuit; the first MOS tube P1, the first triode Q1 and the third MOS tube P3 constitute a feedback circuit. The connection relationship of the circuit is as follows: the gate of the first MOS transistor P1 is connected to the gate of the second MOS transistor P2, the gate of the third MOS transistor P3 and the first end of the startup circuit; the source of the first MOS transistor P1 is connected to the source of the second MOS transistor P2, the drain of the third MOS transistor P3, the second end of the startup circuit and the power supply terminal VDD; the drain of the first MOS transistor P1 is connected to the collector of the first triode Q1; the drain of the second MOS transistor P2 is connected to the collector of the second triode Q2; the base of the first triode Q1 is connected to the base of the second triode Q2 and the source of the third MOS transistor P3; the emitter of the first triode Q1 is connected to the emitter of the second triode Q2 and the third end of the startup circuit, and is grounded.

[0048] In a specific embodiment, due to the existence of a degenerate point inside the original bandgap reference circuit, when the power supply is powered on, the transmission current on all branches inside the circuit may be zero, causing the bandgap reference circuit to fail to work properly. Therefore, the present application provides a novel bandgap reference voltage source circuit, in which a startup circuit is added to get rid of the degenerate state when the power supply is just powered on. Figure 1As shown in the figure, when the power supply end (VDD) is powered on, the gates of the first MOS transistor P1 and the second MOS transistor P2 are high voltage, so the bandgap reference circuit is not started at this time, and the current of each branch in the circuit is 0, then the circuit components in the startup circuit are turned on, and the current flows through the bandgap reference circuit, prompting the bandgap reference circuit to start. After the bandgap reference circuit is started, it means that the bandgap reference circuit is established, and at this time, the circuit components in the startup circuit are turned off, and the startup circuit exits the working state.

[0049] Among them, the first MOS transistor P1 and the second MOS transistor P2 in the bandgap reference circuit are mirror currents, and the sizes of the first MOS transistor P1 and the second MOS transistor P2 are the same, which ensures that the voltages at the collectors of the two transistors under the clamping action are the same, and in the process of selecting the size, in order to reduce the modulation effect of the channel length of the MOS transistor, the MOS transistor with a larger size is selected during the selection. In addition, in the bandgap reference circuit, the emitter areas of the first transistor Q1 and the second transistor Q2 are not equal, and the ratio is 1:8. On the basis of the bases of the first transistor Q1 and the second transistor Q2 being connected, the first transistor Q1 and the second transistor Q2 are respectively used as active loads of the mirror current source composed of the first MOS transistor P1 and the second MOS transistor P2, so the currents at the collectors of the two transistors are the same, but because the emitter area ratios of the first transistor Q1 and the second transistor Q2 are different, the actual current densities of the two transistors are not equal and are inversely proportional to the emitter area. Due to the different emitter current densities, the voltages corresponding to the two transistors are also different.

[0050] If the first transistor Q1 is regarded as a common-emitter amplifier with a resistive load, and the resistance of the first transistor Q1 is , the resistance load is , then the voltage gain of the first transistor Q1 is:

[0051] ;

[0052] in, is the voltage gain of the first transistor Q1, is the transconductance of the transistor. According to the formula, when When the voltage gain of the first MOS tube P1 and the third MOS tube P3 decreases, the voltage gain of the first transistor Q1 decreases. will decrease, which shows that it is a negative feedback relationship. Therefore, the feedback circuit is a negative feedback circuit. Figure 2 As shown, it is the power supply rejection ratio at 27°C; the horizontal axis is the rejection ratio; and the vertical axis is the gain.

[0053] It should be noted that the startup circuit of the above embodiment is only one possible implementation method, and the present application is not limited to only this implementation method, and can be set according to the needs of the user.

[0054] The bandgap reference voltage source circuit provided by the utility model comprises a start-up circuit and a bandgap reference circuit and a feedback circuit, wherein the bandgap reference circuit and the feedback circuit comprise: a first MOS tube P1, a second MOS tube P2, a third MOS tube P3, a first triode Q1 and a second triode Q2; the first MOS tube P1, the second MOS tube P2, the first triode Q1 and the second triode Q2 constitute a bandgap reference circuit; the first MOS tube P1, the first triode Q1 and the third MOS tube P3 constitute a feedback circuit; wherein the gate of the first MOS tube P1 is connected to the gate of the second MOS tube P2, the first triode Q1 and the second triode Q2; The gate of the three MOS transistors P3 is connected to the first end of the startup circuit; the source of the first MOS transistor P1 is connected to the source of the second MOS transistor P2, the drain of the third MOS transistor P3, the second end of the startup circuit and the power supply end; the drain of the first MOS transistor P1 is connected to the collector of the first triode Q1; the drain of the second MOS transistor P2 is connected to the collector of the second triode Q2; the base of the first triode Q1 is connected to the base of the second triode Q2 and the source of the third MOS transistor P3; the emitter of the first triode Q1 is connected to the emitter of the second triode Q2 and the third end of the startup circuit, and is grounded. It can be seen that in the present application, the feedback circuit maintains the stability of the voltage value between the first triode Q1 and the second triode Q2, and improves the power supply rejection ratio; and at the same time, the device in the feedback circuit is also used for clamping, and no other devices need to be set up, thereby simplifying the circuit and reducing the consumption cost.

[0055] On the basis of the above embodiment, as a preferred embodiment, the bandgap reference circuit further includes: a power supply circuit; wherein a first end of the power supply circuit is connected to the source of the first MOS transistor P1, and a second end of the power supply circuit is connected to the source of the second MOS transistor P2; a third end of the power supply circuit is connected to a fourth end of the power supply circuit, a drain of the third MOS transistor P3, a second end of the startup circuit and a power supply terminal VDD.

[0056] Among them, Figure 1As shown, the power supply circuit includes: a fourth MOS transistor P4, a fifth MOS transistor P5, a sixth MOS transistor P6 and a seventh MOS transistor P7. The connection relationship of the circuit is: the gate of the fourth MOS transistor P4, the gate of the fifth MOS transistor P5, the gate of the sixth MOS transistor P6, the gate of the seventh MOS transistor P7 and the drain of the seventh MOS transistor P7 are connected to the source of the second MOS transistor P2 as the second end of the power supply circuit; the source of the fourth MOS transistor P4 is connected to the source of the fifth MOS transistor P5, the second end of the start-up circuit and the power supply end, wherein the source of the fourth MOS transistor P4 is used as the third end of the power supply circuit, and the source of the fifth MOS transistor P5 is used as the fourth end of the power supply circuit; the drain of the fourth MOS transistor P4 is connected to the source of the sixth MOS transistor P6; the drain of the fifth MOS transistor P5 is connected to the source of the seventh MOS transistor P7; the drain of the sixth MOS transistor P6 is connected to the source of the first MOS transistor P1 as the first end of the power supply circuit.

[0057] In addition, Figure 1 As shown, the bandgap reference circuit also includes: a first resistor R1, a second resistor R2 and a third resistor R3. The connection relationship of the circuit is: the first end of the first resistor R1 is connected to the base of the first transistor Q1 and the source of the third MOS transistor P3, and the second end of the first resistor R1 is connected to the base of the second transistor Q2; the first end of the second resistor R2 is connected to the emitter of the second transistor Q2 and the second end of the start-up circuit, and the second end of the second resistor R2 is connected to the emitter of the first transistor Q1 and the first end of the third resistor R3; the second end of the third resistor R3 is grounded.

[0058] From the embodiments of the present application and the above embodiments, it can be known that the first MOS transistor P1 and the second MOS transistor P2 in the bandgap reference circuit are mirror currents, and the sizes of the first MOS transistor P1 and the second MOS transistor P2 are the same, which ensures that the voltages at the collectors of the two transistors under the clamping action are the same, and in the process of selecting the size, in order to reduce the modulation effect of the channel length of the MOS transistor, the MOS transistor with the larger size is selected during the selection. In addition, in the bandgap reference circuit, the emitter areas of the first transistor Q1 and the second transistor Q2 are not equal, and the ratio is 1:8. On the basis of the first transistor Q1 and the second transistor Q2 being connected to each other, the first transistor Q1 and the second transistor Q2 are respectively used as active loads of the mirror current source composed of the first MOS transistor P1 and the second MOS transistor P2, so the currents at the collectors of the two transistors are the same, but because the emitter area ratios of the first transistor Q1 and the second transistor Q2 are different, the actual current densities of the two transistors are not equal and are inversely proportional to the emitter area. Due to the different emitter current densities, the voltages between the two transistors are also not equal. The voltage difference corresponding to the two transistors is added to the first resistor R1, and the expression of the voltage difference is:

[0059] ;

[0060] in, is the voltage difference, is the proportionality coefficient, is the temperature coefficient, is the charge, is the current density corresponding to the first transistor Q1, is the current density corresponding to the second transistor Q2.

[0061] The current flowing through the third resistor R3 is the sum of the current flowing through the first transistor Q1 and the second transistor Q2. The currents of the two transistors are equal. Therefore, the current flowing through the third resistor R3 is twice the current flowing through the second resistor R2. The current flowing through the first transistor Q1, the current flowing through the second transistor Q2, and the voltage at the second resistor R2 are expressed as follows:

[0062] ;

[0063] ;

[0064] ;

[0065] The output of the reference voltage value (that is, the voltage at the first resistor R1) is presented on the base of the first transistor Q1 and the second transistor Q2, which is equal to the sum of the voltage of the first transistor Q1 and the voltage at the third resistor R3;

[0066] ;

[0067] in, is the current flowing through the first transistor Q1, is the current flowing through the second transistor Q2, is the voltage at the first resistor R1, is the voltage at the first transistor Q1, is the voltage at the third resistor R3.

[0068] According to the above formula, The first term in the formula has a negative temperature coefficient and the second term has a positive temperature coefficient, so the sum of the two terms has a zero temperature drift condition.

[0069] In summary, the structure inside the bandgap reference circuit provided by the present application has a negative temperature coefficient relationship and a positive temperature coefficient relationship, and when used in a certain ratio, the bandgap reference circuit can have a nearly zero temperature drift condition.

[0070] Based on the above embodiments, as a preferred embodiment, Figure 1As shown, the feedback circuit also includes: an eighth MOS transistor P8, a first capacitor C1, a second capacitor C2, a third capacitor C3 and a fourth resistor R4. The circuit connection relationship is as follows: the drain of the eighth MOS transistor P8 is connected to the gate of the third MOS transistor P3, the gate of the first MOS transistor P1, the gate of the second MOS transistor P2 and the first end of the start-up circuit; the gate of the eighth MOS transistor P8 and the source of the eighth MOS transistor P8 are grounded; the first end of the first capacitor C1 is connected to the first end of the second capacitor C2, the first end of the fourth resistor R4, the source of the third MOS transistor P3 and the base of the first triode Q1; the second end of the first capacitor C1 is connected to the second end of the second capacitor C2 and the second end of the fourth resistor R4, and is grounded; the first end of the third capacitor C3 is connected to the gate of the third MOS transistor P3, the gate of the first MOS transistor P1 and the gate of the second MOS transistor P2; the second end of the third capacitor C3 is grounded.

[0071] Since the traditional bandgap reference voltage source uses an operational amplifier to stabilize the circuit and improve the power supply rejection ratio, the high offset defect of the operational amplifier limits the further improvement of the power supply rejection ratio. And when the power supply voltage has a high-frequency AC interference signal, the output end of the amplifier will have a significant phase difference with the power supply voltage, resulting in a very low power supply rejection ratio of the voltage at the first resistor R1 at high frequencies. In order to avoid the defects of the amplifier, the present application uses the feedback circuit of the above structure to improve the power supply rejection ratio of the voltage at the first resistor R1 at low frequencies.

[0072] The starting circuit is also Figure 1 As shown, it includes: a ninth MOS transistor P9, a tenth MOS transistor P10, an eleventh MOS transistor P11, a third triode Q3, a fourth triode Q4 and a fifth resistor R5. The connection relationship is: the source of the ninth MOS transistor P9, the source of the tenth MOS transistor P10 and the source of the eleventh MOS transistor P11 are connected to the power supply terminal VDD as the second end of the startup circuit; the gate of the ninth MOS transistor P9 is grounded; the drain of the ninth MOS transistor P9 is connected to the collector of the third triode Q3, the base of the third triode Q3 and the base of the fourth triode Q4; the gate of the tenth MOS transistor P10 is connected to the gate of the eleventh MOS transistor P11, the drain of the tenth MOS transistor P10 and the collector of the fourth triode Q4; The drain of the eleventh MOS transistor P11 is connected to the gate of the first MOS transistor P1, the gate of the second MOS transistor P2 and the gate of the third MOS transistor P3 as the second end of the startup circuit; the emitter of the third triode Q3 is grounded; the emitter of the fourth triode Q4 is connected to the emitter of the second triode Q2 as the third end of the startup circuit; the first end of the fifth resistor R5 is connected to the drain of the ninth MOS transistor P9, and the second end of the fifth resistor R5 is connected to the collector of the third triode Q3, the base of the third triode Q3 and the base of the fourth triode Q4.

[0073] It should be noted that the specific structure of the power supply circuit, the specific structure of the startup circuit, the specific structure of the feedback circuit, and the specific structure of the bandgap reference circuit provided in the embodiment of the present application are only one possible implementation method, but are not limited to only this implementation method and can be set according to the needs of the user.

[0074] From the above embodiments, it can be known that the complete bandgap reference voltage source circuit includes: a first MOS transistor P1, a second MOS transistor P2, a third MOS transistor P3, a fourth MOS transistor P4, a fifth MOS transistor P5, a sixth MOS transistor P6, a seventh MOS transistor P7, an eighth MOS transistor P8, a ninth MOS transistor P9, a tenth MOS transistor P10, an eleventh MOS transistor P11, a first triode Q1, a second triode Q2, a third triode Q3, a fourth triode Q4, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1, a second capacitor C2, and a third capacitor C3. According to the above structure, the internal structure of the bandgap reference circuit in the complete bandgap reference voltage source circuit has a negative temperature coefficient relationship and a positive temperature coefficient relationship, and under a certain ratio, the bandgap reference circuit can have a condition of nearly zero temperature drift. At the same time, the internal structure of the bandgap reference circuit and the third MOS transistor P3 in the negative feedback circuit work together to improve the power supply rejection ratio of the bandgap reference circuit.

[0075] To solve the above technical problems, the present application also provides an electronic device, including the bandgap reference voltage source circuit described above. The embodiment of the sensor is the same as the above embodiment, and the present application will not repeat it here. At the same time, the sensor provided by the present application has the same beneficial effects as the bandgap reference voltage source circuit described above.

[0076] The above is a detailed introduction to a bandgap reference voltage source circuit and an electronic device provided by the utility model. The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the utility model, the utility model can also be improved and modified in a number of ways, and these improvements and modifications also fall within the scope of protection of the claims of the utility model.

[0077] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A bandgap reference voltage source circuit, characterized in that: include: A start-up circuit, a bandgap reference circuit, and a feedback circuit, wherein the bandgap reference circuit and the feedback circuit include: a first MOS tube, a second MOS tube, a third MOS tube, a first triode, and a second triode; the first MOS tube, the second MOS tube, the first triode, and the second triode constitute the bandgap reference circuit; the first MOS tube, the first triode, and the third MOS tube constitute the feedback circuit; The gate of the first MOS tube is connected to the gate of the second MOS tube, the gate of the third MOS tube and the first end of the startup circuit; the source of the first MOS tube is connected to the source of the second MOS tube, the drain of the third MOS tube, the second end of the startup circuit and the power supply end; the drain of the first MOS tube is connected to the collector of the first transistor; The drain of the second MOS tube is connected to the collector of the second triode; The base of the first transistor is connected to the base of the second transistor and the source of the third MOS transistor; The emitter of the first transistor is connected to the emitter of the second transistor and the third end of the start-up circuit, and is grounded.

2. The bandgap reference voltage source circuit according to claim 1, characterized in that: The bandgap reference circuit further includes: a power supply circuit; Wherein, the first end of the power circuit is connected to the source of the first MOS transistor, and the second end of the power circuit is connected to the source of the second MOS transistor; The third end of the power supply circuit is connected to the fourth end of the power supply circuit, the drain of the third MOS tube, the second end of the startup circuit and the power supply end.

3. The bandgap reference voltage source circuit according to claim 2, characterized in that: The power supply circuit comprises: a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube; The gate of the fourth MOS tube, the gate of the fifth MOS tube, the gate of the sixth MOS tube, the gate of the seventh MOS tube and the drain of the seventh MOS tube are connected to the source of the second MOS tube as the second end of the power circuit; The source of the fourth MOS tube is connected to the source of the fifth MOS tube, the second end of the startup circuit and the power supply end, wherein the source of the fourth MOS tube serves as the third end of the power supply circuit, and the source of the fifth MOS tube serves as the fourth end of the power supply circuit; The drain of the fourth MOS tube is connected to the source of the sixth MOS tube; The drain of the fifth MOS tube is connected to the source of the seventh MOS tube; The drain of the sixth MOS transistor is connected to the source of the first MOS transistor as the first end of the power circuit.

4. The bandgap reference voltage source circuit according to claim 1, characterized in that: The bandgap reference circuit further includes: a first resistor, a second resistor and a third resistor; Wherein, the first end of the first resistor is connected to the base of the first transistor and the source of the third MOS transistor, and the second end of the first resistor is connected to the base of the second transistor; The first end of the second resistor is connected to the emitter of the second transistor and the second end of the start-up circuit, and the second end of the second resistor is connected to the emitter of the first transistor and the first end of the third resistor; A second end of the third resistor is grounded.

5. The bandgap reference voltage source circuit according to claim 1, characterized in that: The feedback circuit further includes: an eighth MOS tube; The drain of the eighth MOS tube is connected to the gate of the third MOS tube, the gate of the first MOS tube, the gate of the second MOS tube and the first end of the startup circuit; the gate of the eighth MOS tube and the source of the eighth MOS tube are grounded.

6. The bandgap reference voltage source circuit according to claim 1, characterized in that: The feedback circuit further includes: a first capacitor, a second capacitor and a fourth resistor; The first end of the first capacitor is connected to the first end of the second capacitor, the first end of the fourth resistor, the source of the third MOS transistor and the base of the first transistor; The second end of the first capacitor is connected to the second end of the second capacitor and the second end of the fourth resistor, and is grounded.

7. The bandgap reference voltage source circuit according to claim 1, characterized in that: The feedback circuit further includes: a third capacitor; Wherein, a first end of the third capacitor is connected to the gate of the third MOS tube, the gate of the first MOS tube and the gate of the second MOS tube; and a second end of the third capacitor is grounded.

8. The bandgap reference voltage source circuit according to any one of claims 1 to 7, characterized in that: The startup circuit comprises: a ninth MOS tube, a tenth MOS tube, an eleventh MOS tube, a third triode and a fourth triode; The source of the ninth MOS tube, the source of the tenth MOS tube and the source of the eleventh MOS tube are connected to the power supply end as the second end of the startup circuit; the gate of the ninth MOS tube is grounded; the drain of the ninth MOS tube is connected to the collector of the third transistor, the base of the third transistor and the base of the fourth transistor; The gate of the tenth MOS tube is connected to the gate of the eleventh MOS tube, the drain of the tenth MOS tube and the collector of the fourth transistor; The drain of the eleventh MOS tube is connected to the gate of the first MOS tube, the gate of the second MOS tube and the gate of the third MOS tube as the second end of the startup circuit; The emitter of the third triode is grounded; The emitter of the fourth transistor serves as the third end of the startup circuit and is connected to the emitter of the second transistor.

9. The bandgap reference voltage source circuit according to claim 8, characterized in that: The startup circuit further includes: a fifth resistor; Among them, the first end of the fifth resistor is connected to the drain of the ninth MOS tube, and the second end of the fifth resistor is connected to the collector of the three triodes, the base of the third triode and the base of the fourth triode.

10. An electronic device, characterized in that: A bandgap reference voltage source circuit comprising any one of claims 1 to 9.

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