Half-bridge power module with double-sided heat dissipation

By setting an integrated conductive metal sheet on the frame of the half-bridge power module for heat dissipation, the problem of low heat dissipation efficiency in the double-sided heat dissipation setting in the prior art is solved, and a more efficient heat dissipation effect is achieved.

CN222673023UActive Publication Date: 2025-03-25CHONGQING CLOUDCHILD TECH CO LTD
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Patent Information

Application Number
CN202420707486.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-04-08
Publication Date
2025-03-25
Estimated Expiration
2034-04-08

AI Technical Summary

Technical Problem

When the existing half-bridge power module is set up on both sides, the two S poles of the upper and lower bridge arms need to be partitioned for heat dissipation, resulting in low heat dissipation efficiency.

Method used

A half-bridge power module with double-sided heat dissipation is designed. By setting a first mounting area and a second mounting area on one side of the frame, and an integrated conductive metal sheet is attached to the other side of the frame for heat dissipation, the integrated heat dissipation of the upper and lower bridge arms is realized.

Benefits of technology

It effectively reduces the internal resistance of the product, reduces heat generation, increases the heat dissipation area, improves the heat dissipation efficiency, and improves the overall heat dissipation effect.

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Abstract

The utility model discloses a double-sided heat dissipation half-bridge power module. The module comprises a frame, a first chip and a second chip. A first mounting area, a second mounting area and an output area are arranged on one surface of the frame, a D pole of the first chip is mounted on the first mounting area, and an S pole of the second chip is mounted on the second mounting area; the first chip, the second chip and the output end of the output area are connected through a conductive metal sheet; a conductive metal sheet is attached to the other face of the frame and used for heat dissipation. According to the utility model, the D pole of the first chip and the S pole of the second chip are correspondingly attached to the first surface-mount area and the second surface-mount area, and the first chip, the second chip and the output area are connected by using the integrated conductive metal sheet, so that the internal resistance of a product can be effectively reduced, the heat dissipation area is increased, and the heat dissipation efficiency is improved; and an integrated conductive metal sheet is also attached to the other surface of the frame, so that the overall heat dissipation effect of the power half-bridge module can be improved.
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Description

Technical Field

[0001] The utility model relates to the technical field of power modules, in particular to a half-bridge power module with double-sided heat dissipation. Background Art

[0002] A power module is a power semiconductor device formed by connecting and packaging power chips such as IGBT and MOSFET according to corresponding circuits and packaging forms. Its main function is to control the current and voltage of power equipment, achieve efficient operation of power equipment, protect power equipment from damage such as overcurrent and overvoltage, and improve the reliability and safety of power equipment. During the operation of the power module, the module temperature is prone to overheating, which will affect the normal operation of the power module.

[0003] Power modules can be divided into half-bridge power modules, full-bridge power modules and H-bridge power modules. Half-bridge power modules are widely used in small power, inverter, motor drive and other fields due to their low cost and simple structure.

[0004] In the existing half-bridge power module, in order to ensure the normal heat dissipation of the half-bridge power module, such as Figure 1-2 As shown in the figure, the D poles of the chips in the half-bridge power module are all attached to the frame, and the upper bridge S pole and the lower bridge D pole bridge arm are connected by aluminum wire or copper sheet. This setting method increases the contact resistance of the solder joints at the connection, increases the internal resistance, and increases the loss. If double-sided heat dissipation is used, because the S poles of the chips are facing upward, two conductive metal sheets are attached to the front of the frame to dissipate the heat. The two S poles of the upper and lower bridge arms need to be dissipated in different areas, such as Figure 3 As shown in the figure, the heat dissipation area is not maximized. Figure 1-Figure 3 shown.

[0005] In the process of implementing the present utility model, the inventors found that there are at least the following problems in the prior art:

[0006] In the existing half-bridge power module, if double-sided heat dissipation is configured, the two S poles of the upper and lower bridge arms need to be cooled in separate areas, resulting in low heat dissipation efficiency. Utility Model Content

[0007] The purpose of the utility model is to provide a half-bridge power module with double-sided heat dissipation to solve the technical problem that the two S poles of the upper and lower bridge arms in the half-bridge power module in the prior art need to be zoned for heat dissipation, resulting in low heat dissipation efficiency. The preferred technical solution among the many technical solutions provided by the utility model can produce many technical effects as described below.

[0008] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0009] The utility model provides a double-sided heat dissipation half-bridge power module, comprising: a frame, a first chip and a second chip;

[0010] A first mounting area, a second mounting area and an output area are provided on one surface of the frame, the D pole of the first chip is mounted on the first mounting area, and the S pole of the second chip is mounted on the second mounting area; the first chip, the second chip and the output end of the output area are connected by a conductive metal sheet;

[0011] The conductive metal sheet is attached to the other side of the frame for heat dissipation;

[0012] The conductive metal sheet is an integrated conductive metal sheet.

[0013] Preferably, the first mounting area includes a first mounting position, a G1 pin and two VDD pins;

[0014] The first mounting position and the two VDD pins are an integrated structure, and the first chip is mounted on the first mounting position;

[0015] The G1 pin is spaced apart from the first mounting position on the same side, and the first chip is connected to the G1 pin via wire bonding.

[0016] Preferably, the second mounting area includes a second mounting position, a G2 pin and two S2 pins;

[0017] The second mounting position and the two S2 pins are an integrated structure, and the second chip is mounted on the second mounting position;

[0018] The G2 pin and the second mounting position are spaced apart on the same side, and the second chip is connected to the G2 pin via wire bonding.

[0019] Preferably, a G-pole notch is provided on the second mounting position, and when the S-pole of the second chip faces downward, it can be installed aligned with the G-pole notch.

[0020] Preferably, a solder joint is provided at the G pole notch, and the second chip is wire-bonded to the G2 pin via the solder joint.

[0021] Preferably, the G-pole gap is a gap formed after half etching.

[0022] Preferably, the output end of the output region includes two V pins, and the two V pins are integrally connected;

[0023] The first chip and the second chip are bridged with the two V pins through the conductive metal sheet;

[0024] The two V pins are used for power output.

[0025] Preferably, the metal in the conductive metal sheet is copper, aluminum or silver.

[0026] Preferably, the half-bridge power module further comprises a packaging body, and the packaging body is used to plastic-encapsulate the frame, the first chip and the second chip;

[0027] The packaging body is an epoxy plastic packaging body;

[0028] The first chip and the second chip are MOSFETs.

[0029] Preferably, the width of the packaged half-bridge power module is in the range of 4-9 mm, the length is in the range of 5-10 mm, and the depth is in the range of 1-2 mm.

[0030] Implementing one of the above technical solutions of the utility model has the following advantages or beneficial effects:

[0031] In the utility model, the D pole of the first chip and the S pole of the second chip are correspondingly mounted on the first mounting area and the second mounting area, and an integrated conductive metal sheet is used to connect the first chip, the second chip and the output area, which can effectively reduce the internal resistance of the product, reduce heat generation, increase the heat dissipation area, and improve the heat dissipation efficiency. An integrated conductive metal sheet is also mounted on the other side of the frame, which can improve the overall heat dissipation effect of the power half-bridge module. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0033] Figure 1 is a schematic diagram of using welding wires for connection in the prior art;

[0034] Figure 2 is a schematic diagram of the prior art using a conductive metal sheet for connection;

[0035] Figure 3 It is a front view schematic diagram of using a metal sheet to dissipate heat when double-sided heat dissipation is adopted in the prior art;

[0036] Figure 4 It is a schematic diagram of the overall structure of the back side of the frame in the embodiment of the utility model;

[0037] Figure 5 It is a schematic diagram of the front structure after packaging in an embodiment of the utility model.

[0038] In the figure: 1. frame; 11. first mounting area; 111. first mounting position; 12. second mounting area; 121. second mounting position; 122. G-pole notch; 123. connection area; 13. output area; 2. first chip; 3. second chip; 4. conductive metal sheet; 5. lead; 6. package body. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solutions and advantages of the utility model clearer, the various exemplary embodiments to be described below will refer to the corresponding drawings, which constitute a part of the exemplary embodiments, wherein various exemplary embodiments that may be used to implement the utility model are described. Unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation methods described in the following exemplary embodiments do not represent all implementation methods consistent with the present disclosure. It should be understood that they are only examples of processes, methods, and devices that are consistent with some aspects of the utility model disclosed as detailed in the attached claims, and other embodiments may also be used, or the embodiments listed herein may be modified in structure and function without departing from the scope and essence of the utility model.

[0040] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", etc. indicate the orientation or position relationship based on the drawings, which is only for the convenience of describing the utility model and simplifying the description, rather than indicating or implying that the elements referred to must have a specific orientation, be constructed and operated in a specific orientation. The terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. The term "multiple" means two or more. The terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, an integral connection, a mechanical connection, an electrical connection, a communication connection, a direct connection, an indirect connection through an intermediate medium, and can be the internal connection of two elements or the interaction relationship between two elements. The term "and / or" includes any and all combinations of one or more related listed items. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to the specific circumstances.

[0041] In order to illustrate the technical solution of the present invention, a specific embodiment is provided below, in which only the parts related to the embodiment of the present invention are shown.

[0042] Example:

[0043] like Figure 4-5As shown, the utility model provides a double-sided heat dissipation half-bridge power module, including: a frame 1, a first chip 2 and a second chip 3; a first mounting area 11, a second mounting area 12 and an output area 13 are arranged on one side of the frame 1, the D pole of the first chip 2 is mounted on the first mounting area 11, and the S pole of the second chip 3 is mounted on the second mounting area 12; the output ends of the first chip 2, the second chip 3 and the output area 13 are connected by a conductive metal sheet 4; a conductive metal sheet 4 is mounted on the other side of the frame 1 for heat dissipation; the conductive metal sheet 4 is an integrated conductive metal sheet 4. It should be noted that the first chip 2 and the second chip 3 in this embodiment are preferably MOSFET power chips, and IGBT power chips and / or FRD power chips can also be selected.

[0044] Specifically, if Figure 4 As shown, the first chip 2 and the second chip 3 are both mounted on the frame 1. On one side of the frame 1, a first mounting area 11 and a second mounting area 12 for mounting the first chip 2 and the second chip 3 are correspondingly provided. The first chip 2 and the second chip 3 are mounted separately on the frame 1, which is convenient for mounting and subsequent connection. It should be noted that the D pole of the first chip 2 is mounted on the first mounting area 11 by solder welding, and the S pole of the second chip 3 is mounted on the second mounting area 12 by solder welding. The first chip 2 and the second chip 3 are reversely mounted, which is different from the existing ones, in which the D pole is mounted on the frame 1. By mounting the first chip 2 and the second chip 3 reversely on the frame, the conductive metal sheet 4 can be integrated. By mounting the first chip 2 and the second chip 3 reversely, the internal resistance of the product can be effectively reduced, and the heat can be reduced, while also reducing the current inductance.

[0045] After the first chip 2 and the second chip 3 are correspondingly mounted on the first mounting area 11 and the second mounting area 12, a conductive metal sheet 4 is needed to connect the first chip 2, the second chip 3 and the output end on the output area 13. In addition to the connection function, the conductive metal sheet 4 here can also dissipate heat during the use of the power module. The setting of the conductive metal sheet 4 integrates the heat dissipation of the upper and lower bridge arms, increases the heat dissipation area, and improves the heat dissipation efficiency.

[0046] The frame 1 includes two surfaces. The above description is about the specific situation that the first chip 2 and the second chip 3 are arranged on one surface of the frame 1. The following description is about the specific situation of the other surface of the frame 1. A whole conductive metal sheet 4 is directly attached to the other surface of the frame 1, which is also used for heat dissipation. The arrangement of the conductive metal sheets 4 on both sides of the frame 1 can achieve double-sided heat dissipation, improve heat dissipation efficiency, and maximize the heat dissipation area.

[0047] It should be noted that the conductive metal sheets 4 disposed on both sides of the frame 1 are all integrated conductive metal sheets.

[0048] In the utility model, the first chip 2 and the second chip 3 are reversely pasted on the frame 1, so that the D pole of the first chip 2 and the S pole of the second chip 3 are correspondingly pasted on the first mounting area 11 and the second mounting area 12, and then the first chip 2, the second chip 3 and the output area 13 are connected using an integrated conductive metal sheet 4, which can effectively reduce the internal resistance of the product, reduce heat generation, increase the heat dissipation area, and improve the heat dissipation efficiency. In addition, an integrated conductive metal sheet 4 is also pasted on the other side of the frame 1, realizing double-sided heat dissipation, improving the overall heat dissipation effect of the power half-bridge module, and improving the reliability of the device.

[0049] As an optional implementation, Figure 4 As shown, the first mounting area 11 includes a first mounting position 111, a G1 pin and two VDD pins; the first mounting position 111 and the two VDD pins are an integrated structure, and the first chip 2 is mounted on the first mounting position 111; the G1 pin and the first mounting position 111 are spaced apart on the same side, and the first chip 2 and the G1 pin are bonded and connected via a wire 5.

[0050] Specifically, the first mounting area 11 is an installation area on the frame 1, and the first mounting area 11 includes a first mounting position 111, a G1 pin and two VDD pins. The first mounting position 111 is set to facilitate the installation of the first chip 2, and the first chip 2 can be directly set at the first mounting position 111. The two VDD pins are set above the frame 1, and the first mounting position 111 and the two VDD pins are integrally formed. After the first chip 2 is mounted on the first mounting position 111, it is directly electrically connected to the two VDD pins. It should be noted that the two VDD pins are drain pins. When the MOSFET used in the half-bridge module is an N-channel, the VDD drain pin is used to power the first chip 2 and the second chip 3; when the MOSFET used in the half-bridge module is a P-channel, VDD is a power output pin, and the S2 pin is used to power the first chip 2 and the second chip 3.

[0051] G1 is set below the frame 1, and the G1 pin is spaced apart on the same side as the first mounting position 111. After the first chip 2 is mounted on the first mounting position 111, the lead 5 is needed to bond the first chip 2 and the G1 pin to ensure the electrical connection between the first chip 2 and the G1 pin.

[0052] As an optional embodiment, the second mounting area 12 includes a second mounting position 121, a G2 pin and two S2 pins; the second mounting position 121 and the two S2 pins are an integral structure, and the second chip 3 is mounted on the second mounting position 121; the G2 pin and the second mounting position 121 are spaced apart on the same side, and the second chip 3 is bonded to the G2 pin via a wire 5.

[0053] Specifically, the second mounting area 12 is another mounting area on the frame 1, and has the same structure as the first mounting area 11. The first mounting area 11 is arranged on the left side of the frame 1, and the second mounting area 12 is arranged on the right side of the frame 1. The second mounting area 12 includes a second mounting position 121, a G2 pin and two S2 pins. The second mounting position 121 is provided to facilitate the installation of the second chip 3, and the second chip 3 can be directly arranged at the second mounting position 121. The two S2 pins are arranged above the frame 1, and the second mounting position 121 and the two S2 pins are integrally formed, and the second chip 3 is mounted on the second mounting position 121 by soldering. It should be noted that the two S2 pins are used for the input or output of the module current (when the MOSFET is an N-channel, S2 is the power output; when the MOSFET is a P-channel, S2 is the power input).

[0054] G2 is set below the frame 1, and the G2 pin is spaced apart from the second mounting position 121. After the second chip 3 is mounted on the second mounting position 121, the lead 5 is required to bond the second chip 3 and the G2 pin to ensure the electrical connection between the second chip 3 and the G1 pin.

[0055] As an optional implementation, Figure 4 As shown, a G-pole notch 122 is provided on the second mounting position 121. When the S-pole of the second chip 3 faces downward, it can be installed aligned with the G-pole notch 122. A soldering point is provided at the G-pole notch 122, and the second chip 3 is bonded to the G2 pin lead 5 through the soldering point.

[0056] Specifically, the second chip 3 mounted on the second mounting position 121 needs to be connected to the G2 pin. Since the present embodiment is a half-bridge power chip, the connection method between the second chip 3 and the G2 pin is different from the connection method between the first chip 2 and the G1 pin. The following is a detailed description: A G-pole notch 122 is provided at a position close to the G2 pin on the second mounting position 121. When the second chip 3 needs to be mounted on the second mounting position 121, the second chip 3 only needs to be aligned with the G-pole notch 122 with the S pole facing downward. The setting of the G-pole notch 122 facilitates the placement of the second chip 3; since the G-pole notch 122 is provided on the second mounting position 121, a solder joint needs to be provided on the G-pole notch 122 to facilitate the connection between the second chip 3 and the G2 pin. The second chip 3 and the G2 pin are bonded and connected via a lead 5. It should be noted that the G-pole notch 122 is actually a notch formed after the upper half of the frame 1 is etched.

[0057] In this embodiment, when the power module is powered on, current is input from the two VDD pins, passes through the D pole and S pole of the first chip in sequence, then passes through the conductive metal sheet to the D pole of the second chip, then to the S pole of the second chip, and finally to the S2 pin.

[0058] As an optional implementation, the output end of the output region 13 includes two V pins, and the two V pins are connected as one; the first chip 2 and the second chip 3 are bridged with the two V pins through a conductive metal sheet 4; and the two V pins are used for power output.

[0059] Specifically, the output area 13 is set between the G1 pin and the G2 pin, and the output area 13 includes two V pins. After the first chip 2 and the second chip 3 are respectively mounted on the first mounting position 111 and the second mounting position 121, the conductive metal sheet 4 will bridge the first chip 2, the second chip 3 and the two V pins, thereby achieving electrical connection and enabling the power module to dissipate heat during operation, thereby improving heat dissipation efficiency.

[0060] As an optional implementation, the metal in the conductive metal sheet 4 is copper, aluminum or silver. Specifically, the conductive metal sheet 4 is used to conduct electricity and dissipate heat. In this embodiment, the conductive metal sheet 4 is preferably a copper sheet.

[0061] As an optional implementation, Figure 5 As shown, the half-bridge power module also includes a package 6, which is used to plastic-encapsulate the frame 1, the first chip 2 and the second chip 3; the package 6 is an epoxy plastic package. The width range of the half-bridge power module after packaging is 4-9mm, the length range is 5-10mm, and the depth range is 1-2mm. The width of the half-bridge power module in this embodiment is preferably 5mm, the length is preferably 6mm, and the depth is 1mm. The overall size after packaging is 5mm×6mm×1mm.

[0062] It should be noted that if Figure 4 As shown, connection areas 123 are provided on both the first mounting area 11 and the second mounting area 12. After the epoxy plastic package completes the encapsulation of the frame 1, the first chip 2 and the second chip 3, the connection areas 123 on the first mounting area 11 and the second mounting area 12 will be exposed outside the epoxy plastic package, which is convenient for the subsequent installation of the half-bridge power module on the PCB board and ensures the stability of the installation of the half-bridge power module on the PCB board.

[0063] The embodiment is only a special case and does not indicate that the present invention is implemented in such a way.

[0064] The above description is only the preferred embodiment of the present invention. Those skilled in the art will appreciate that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. In addition, under the guidance of the present invention, these features and embodiments may be modified to adapt to specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application belong to the protection scope of the present invention.

Claims

1. A double-sided heat dissipation half-bridge power module, characterized in that: include: A frame (1), a first chip (2) and a second chip (3); A first mounting area (11), a second mounting area (12) and an output area (13) are provided on one surface of the frame (1); the D pole of the first chip (2) is mounted on the first mounting area (11), and the S pole of the second chip (3) is mounted on the second mounting area (12); the first chip (2), the second chip (3) and the output end of the output area (13) are connected via a conductive metal sheet (4); The conductive metal sheet (4) is attached to the other surface of the frame (1) for heat dissipation; The conductive metal sheet (4) is an integrated conductive metal sheet.

2. A double-sided heat dissipation half-bridge power module according to claim 1, characterized in that: The first mounting area (11) includes a first mounting position (111), a G1 pin and two VDD pins; The first mounting position (111) and the two VDD pins are an integrated structure, and the first chip (2) is mounted on the first mounting position (111); The G1 pin and the first mounting position (111) are arranged at a distance from each other on the same side, and the first chip (2) and the G1 pin are bonded and connected via a wire (5).

3. A double-sided heat dissipation half-bridge power module according to claim 1, characterized in that: The second mounting area (12) comprises a second mounting position (121), a G2 pin and two S2 pins; The second mounting position (121) and the two S2 pins are an integrated structure, and the second chip (3) is mounted on the second mounting position (121); The G2 pin and the second mounting position (121) are arranged at a distance from each other on the same side, and the second chip (3) is bonded to the G2 pin via a wire (5).

4. A double-sided heat dissipation half-bridge power module according to claim 3, characterized in that: The second mounting position (121) is provided with a G-pole notch (122), and when the S-pole of the second chip (3) faces downward, it can be aligned with the G-pole notch (122) for mounting.

5. A double-sided heat dissipation half-bridge power module according to claim 4, characterized in that: A soldering point is provided at the G-pole notch (122), and the second chip (3) is bonded and connected to the G2 pin lead (5) via the soldering point.

6. A double-sided heat dissipation half-bridge power module according to claim 4, characterized in that: The G-pole notch (122) is a notch formed after half etching.

7. A double-sided heat dissipation half-bridge power module according to claim 1, characterized in that: The output end of the output region (13) comprises two V pins, and the two V pins are integrally connected; The first chip (2) and the second chip (3) are bridged to the two V pins via the conductive metal sheet (4); The two V pins are used for power output.

8. A double-sided heat dissipation half-bridge power module according to claim 1, characterized in that: The metal in the conductive metal sheet (4) is copper, aluminum or silver.

9. A double-sided heat dissipation half-bridge power module according to any one of claims 1 to 8, characterized in that: The half-bridge power module further comprises a packaging body (6), wherein the packaging body (6) is used to plastic-encapsulate the frame (1), the first chip (2) and the second chip (3); The packaging body (6) is an epoxy plastic packaging body; The first chip (2) and the second chip (3) are MOSFETs.

10. A half-bridge power module with double-sided heat dissipation according to claim 9, characterized in that: The width of the packaged half-bridge power module is in the range of 4-9 mm, the length is in the range of 5-10 mm, and the depth is in the range of 1-2 mm.