Radio frequency amplification circuit

Abstract

The utility model discloses a radio frequency amplification circuit, and the circuit comprises an active bias circuit which is connected between a first end and a second end of the amplification circuit, and outputs a first bias voltage; a first end of the amplification circuit receives a first bias voltage, receives a radio frequency input signal from an input end of the radio frequency amplification circuit, and outputs a radio frequency output signal from an output end of the radio frequency amplification circuit; the turn-off control circuit is connected between the output end of the radio frequency amplification circuit and the grounding end of the radio frequency amplification circuit, is also connected with the control end of the radio frequency amplification circuit and is used for receiving the control signal and providing a second bias voltage for the amplification circuit so as to control the turn-on or turn-off of the amplification circuit; when the control signal is a first level, the amplification circuit is turned off, and when the control signal is a second level, the amplification circuit is turned on, and the radio frequency input signal is amplified and output as a radio frequency output signal. The radio frequency amplification circuit adopts the turn-off control circuit to directly control the turn-on and turn-off of the amplification circuit, and is simple in circuit structure, small in size, low in cost, high in gain and low in noise.

Description

Technical Field

[0001] The utility model relates to the field of integrated circuits, and in particular to a radio frequency amplification circuit. Background Art

[0002] In recent years, with the rapid development of wireless communication technology, RF integrated circuits are increasingly showing requirements for high performance, low power consumption and low cost. As the first-stage circuit in the wireless terminal receiver, the main function of the low-noise RF amplifier (RF LNA, Radio Frequency Low Noise Amplifier) ​​is to receive weak signals from the antenna for amplification and reduce noise introduction. RF low noise amplifiers can be widely used in base stations, wireless infrastructure and other scenarios that require low power consumption, low noise and high performance. In the TDD (Time Division Duplexing) time division duplexing system of wireless transceivers, RF low noise amplifiers are usually required to operate using the power on / off function to save DC power consumption.

[0003] Conventional amplifiers that do not have a shutdown function work continuously when the power is turned on. In TDD time division duplex operation, an RF single-pole double-throw switch circuit is required to select the on-off state of the amplifier circuit. For example, a single-pole double-throw switch circuit is cascaded at the input / output end of the amplifier circuit, and the single-pole double-throw switch circuit controls the conduction or disconnection of the input to output path to switch the working mode. However, this structure uses more components and the chip layout area is larger, which makes the chip cost higher and not easy to integrate. In addition, the switch circuit will have a certain insertion loss in the on state, which reduces the gain of the system link and will also cause the system noise and output power to deteriorate to a certain extent. Utility Model Content

[0004] In view of the above, the purpose of the utility model is to provide a radio frequency amplifier circuit that does not require a single-pole double-throw switch, and adopts a shutdown control circuit to directly control the conduction and shutdown of the amplifier circuit to solve the problems in the prior art.

[0005] According to one aspect of the utility model, a radio frequency amplifier circuit is provided, comprising: an input end of the radio frequency amplifier circuit, an output end of the radio frequency amplifier circuit, a control end of the radio frequency amplifier circuit, and a ground end of the radio frequency amplifier circuit; an active bias circuit connected between a first end and a second end of the amplifier circuit, the active bias circuit outputting a first bias voltage; an amplifier circuit receiving a radio frequency input signal from the input end of the radio frequency amplifier circuit, the first end of the amplifier circuit receiving the first bias voltage, and outputting a radio frequency output signal from the output end of the radio frequency amplifier circuit; and a shutdown control circuit, the shutdown control circuit being connected between the output end of the radio frequency amplifier circuit and the ground end of the radio frequency amplifier circuit. The shutdown control circuit is also connected to the control end of the RF amplifier circuit and receives a control signal, and the shutdown control circuit provides a second bias voltage to the amplifier circuit to control the on or off of the amplifier circuit; when the control signal received by the shutdown control circuit is a first level, the shutdown control circuit shuts down the amplifier circuit, and the RF amplifier circuit does not amplify the RF input signal; when the control signal received by the shutdown control circuit is a second level, the shutdown control circuit turns on the amplifier circuit, the RF amplifier circuit amplifies the RF input signal, and the RF output signal output by the RF amplifier circuit is an amplified signal of the RF input signal.

[0006] Optionally, the RF amplifying circuit further includes: an output matching circuit, which provides a power supply voltage at the power supply end of the RF amplifying circuit to the second end of the amplifying circuit; the output matching circuit realizes conjugate impedance matching to reduce power loss of the RF output signal.

[0007] Optionally, the RF amplifying circuit further includes: an input matching circuit, through which the RF input signal is provided to the first end of the amplifying circuit; the input matching circuit reduces noise of the RF input signal.

[0008] Optionally, the output matching circuit is connected to the outside of the output end of the radio frequency amplification circuit.

[0009] Optionally, the RF amplifying circuit further includes a power supply terminal of the RF amplifying circuit, and the output matching circuit is connected between the power supply terminal of the RF amplifying circuit, the second terminal of the amplifying circuit and the output terminal of the RF amplifying circuit.

[0010] Optionally, the input matching circuit is connected to the outside of the input end of the radio frequency amplification circuit.

[0011] Optionally, the input matching circuit is connected between an input end of the radio frequency amplifying circuit and a first end of the amplifying circuit.

[0012] Optionally, the shutdown control circuit includes: a first resistor and a second resistor connected in series, the first end of the first resistor is connected to the second end of the amplifier circuit, the second end of the second resistor is connected to the ground terminal of the amplifier circuit, the second end of the first resistor is connected to the first end of the second resistor, and the connection node between the first resistor and the second resistor is a first node; a first transistor, the first transistor is connected between the first node and the ground terminal of the RF amplifier circuit; the control end of the first transistor receives the control signal, and the first node outputs the second bias voltage.

[0013] Optionally, the first transistor is an enhancement type field effect transistor.

[0014] Optionally, the first transistor is a depletion-type field effect transistor.

[0015] Optionally, the shutdown control circuit also includes: a first capacitor connected between the first node and the ground terminal of the RF amplification circuit; and a third resistor, a first end of the third resistor is connected to the control terminal of the first transistor, and a second end of the third resistor receives the control signal.

[0016] Optionally, the first level of the control signal is a high level, and the second level of the control signal is a low level.

[0017] Optionally, the first level of the control signal is a high level, and the second level of the control signal is a negative voltage.

[0018] Optionally, the amplifier circuit includes: a second transistor, a first end of the second transistor is connected to the ground end of the RF amplifier circuit, and a control end of the second transistor serves as the first end of the amplifier circuit and receives the first bias voltage; and a third transistor, a first end of the third transistor is connected to the second end of the second transistor, and the second end of the third transistor serves as the second end of the amplifier circuit, and the control end of the third transistor receives the second bias voltage.

[0019] Optionally, the second transistor and the third transistor form a common source and common gate structure, and the gate sizes of the second transistor and the third transistor are different or the same.

[0020] Optionally, the active bias circuit includes: a fourth resistor, a first end of the fourth resistor is connected to the second end of the amplifier circuit; a fifth resistor, a first end of the fifth resistor is connected to the second end of the fourth resistor, and the second end of the fifth resistor is connected to the first end of the amplifier circuit; and a fourth transistor, a first end of the fourth transistor is connected to the ground terminal of the RF amplifier circuit, a second end of the fourth transistor is connected to the second end of the fourth resistor, and a control end of the fourth transistor is connected to the first end of the fifth resistor.

[0021] Optionally, the input matching circuit includes: a second capacitor, a first end of which receives the RF input signal; and a first inductor, a first end of which is connected to a second end of the second capacitor, and a second end of which is connected to a first end of the amplifier circuit.

[0022] Optionally, the output matching circuit includes: a second inductor, a first end of which is connected to a power supply terminal of the RF amplifying circuit, and a second end of which is connected to a second end of the amplifying circuit; and a third capacitor, a first end of which is connected to the second end of the second inductor, and a second end of which outputs the RF output signal.

[0023] Optionally, the radio frequency amplification circuit is a single integrated chip.

[0024] The radio frequency amplifier circuit of the embodiment of the utility model is amplified by the amplifier circuit, and the working state of the amplifier circuit is controlled by the shutdown control circuit. The shutdown control circuit has a shutdown bias function and can adjust the bias operating point of the amplifier circuit, and select the amplifier circuit to work in the gain mode or the shutdown mode. Therefore, there is no need to set up a single-pole double-throw switch separately, fewer devices are used, and it is easy to integrate into a single chip, which has the advantages of small size, low cost, and easy to use and operate. And it will not introduce the insertion loss of the radio frequency switch, eliminating the problem of noise coefficient deterioration caused by the radio frequency switch, so it has higher gain and lower noise characteristics.

[0025] Furthermore, when the shutdown control circuit controls the RF amplifier circuit to work in the shutdown mode, the amplifier circuit is directly shut down and is in a non-operating state, so it has lower power consumption and higher isolation, and the shutdown function can make the system-level response faster and safer, while reducing power consumption and cost, providing an additional layer of protection for the chip to prevent high current from damaging the chip circuit. The low-noise RF amplifier circuit with shutdown function is particularly suitable for the application of TDD time division duplex communication system.

[0026] Furthermore, the radio frequency amplifier circuit achieves low noise and high gain characteristics in a required operating frequency band through an input matching circuit and an output matching circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings.

[0028] Figure 1 A schematic block diagram of a radio frequency amplification circuit according to a first embodiment of the utility model is shown.

[0029] Figure 2 A schematic circuit diagram of a radio frequency amplification circuit according to a first embodiment of the utility model is shown.

[0030] Figure 3 A schematic block diagram of a radio frequency amplification circuit according to a second embodiment of the present utility model is shown.

[0031] Figure 4 A schematic circuit diagram of a radio frequency amplification circuit according to a second embodiment of the utility model is shown.

[0032] Figure 5 A schematic circuit diagram of a radio frequency amplification circuit according to a third embodiment of the utility model is shown.

[0033] Figure 6 Schematic waveform diagrams of various signals when the radio frequency amplifying circuit according to the first embodiment and the second embodiment of the utility model works in the gain mode are shown.

[0034] Figure 7 Schematic waveform diagrams of various signals when the radio frequency amplifying circuit according to the first embodiment and the second embodiment of the utility model works in the shutdown mode are shown.

[0035] Figure 8 A schematic waveform diagram of various signals when the radio frequency amplification circuit according to the third embodiment of the utility model works in a gain mode is shown.

[0036] Fig. 9 A schematic waveform diagram of various signals when the radio frequency amplification circuit according to the third embodiment of the utility model works in the shutdown mode is shown.

[0037] Fig.10 A waveform comparison diagram of the power supply current when the radio frequency amplifier circuit according to the first to third embodiments of the utility model operates in a gain mode and a shutdown mode is shown. DETAILED DESCRIPTION

[0038] Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, the same elements are represented by the same or similar reference numerals. For the sake of clarity, the various parts in the accompanying drawings are not drawn to scale.

[0039] Unless explicitly stated otherwise, throughout the specification and claims, the term “comprise” or variations such as “include” or “comprising”, etc., will be understood to include the stated elements or components but not to exclude other elements or components.

[0040] The term "coupled" or "connected" or "connected" in the specification includes both direct connection and indirect connection. Indirect connection is a connection through an intermediate medium, such as a connection through an electrically conductive medium, which may have parasitic inductance or parasitic capacitance; indirect connection may also include connection through other active or passive devices on the basis of achieving the same or similar functional purpose, such as connection through circuits or components such as switches and follower circuits. In addition, in the present invention, words such as "first" and "second" are mainly used to distinguish one technical feature from another technical feature, and do not necessarily require or imply that there is a certain actual relationship, quantity or order between these technical features.

[0041] Figure 1 A schematic block diagram of a radio frequency amplification circuit according to a first embodiment of the utility model is shown.

[0042] like Figure 1 As shown, the low-noise RF amplifier circuit 100 with a shutdown function of this embodiment is a single integrated chip, which may include multiple pins, such as an IN pin, an OUT pin, a VDD pin, a CTR pin, and a GND pin. The IN pin is the input end of the RF amplifier circuit, which is used to receive the RF input signal RFin, and the OUT pin is the output end of the RF amplified signal, which is used to output the RF output signal RFout. The GND pin is the ground terminal of the RF amplifier circuit, which is connected to the reference ground, and the VDD pin is the power supply end of the RF amplifier circuit, which provides the power supply voltage VDD. The CTR pin is the control end of the RF amplifier circuit, which is used to receive the control signal Vctrl and provide it to the inside of the chip. The chip of the RF amplifier circuit 100 integrates an input matching circuit 140, an amplifier circuit 110, an active bias circuit 120, a shutdown control circuit 130, and an output matching circuit 150.

[0043] The input matching circuit 140 is connected between the input terminal IN of the RF amplifier circuit and the first terminal of the amplifier circuit 110, and the RF input signal RFin is provided to the first terminal of the amplifier circuit 110 via the input matching circuit 140. Specifically, the input terminal of the input matching circuit 140 is the input terminal IN of the RF amplifier circuit, and the output terminal of the input matching circuit 140 is connected to the first terminal of the amplifier circuit 110, and the noise of the RF input signal RFin is reduced by minimum noise impedance matching, and the RF input signal RFin is transmitted to the amplifier circuit 110 after performing signal processing such as noise reduction. Similarly, the output matching circuit 150 is connected between the power supply terminal VDD of the RF amplifier circuit, the second terminal of the amplifier circuit 110, and the output terminal OUT of the RF amplifier circuit, and provides the power supply voltage VDD to the second terminal of the amplifier circuit 110, and performs signal processing on the RF output signal RFout output by the amplifier circuit 110. Specifically, the output end of the output matching circuit 150 is the output end OUT of the RF amplifier circuit, and the input end of the output matching circuit 150 is connected to the second end of the amplifier circuit 110. The output matching circuit 150 is used to achieve conjugate impedance matching, reduce the power loss of the RF output signal RFout, and enable the RF amplifier circuit to achieve good gain through conjugate impedance matching.

[0044] The amplifier circuit 110 is also connected to the active bias circuit 120, the shutdown control circuit 130 and the ground terminal GND of the RF amplifier circuit respectively. Specifically, the amplifier circuit 110 receives the RF input signal RFin from the input terminal IN of the RF amplifier circuit, amplifies the RF input signal RFin into the RF output signal RFout in the on state, and outputs the RF output signal RFout from the output terminal OUT of the RF amplifier circuit. The active bias circuit 120 is connected between the first terminal and the second terminal of the amplifier circuit 110, and the active bias circuit 120 outputs the first bias voltage VB, and the first terminal of the amplifier circuit 110 receives the first bias voltage VB. The shutdown control circuit 130 is connected between the output terminal OUT of the RF amplifier circuit (the input terminal of the output matching circuit 150) and the ground terminal GND of the RF amplifier circuit. The shutdown control circuit 130 is also connected to the control terminal CTR of the RF amplifier circuit and receives the control signal Vctrl. The shutdown control circuit 130 is also connected to the amplifier circuit 110 and provides a second bias voltage VA to the amplifier circuit 110 to control the amplifier circuit 110 to be turned on or off.

[0045] The active bias circuit 120 provides a stable DC operating point for the amplifier circuit 110, that is, provides a stable first bias voltage VB, and can effectively reduce the influence of process fluctuations and temperature changes on the current. The shutdown control circuit 130 can provide a variable second bias voltage VA for the amplifier circuit 110, so that according to the active bias circuit 120 and the shutdown control circuit 130, the RF amplifier circuit 100 can be selected to operate in a gain mode or a shutdown mode. When the control signal Vctrl received by the shutdown control circuit 130 is a first level, the shutdown control circuit 130 shuts down the amplifier circuit 110, the RF amplifier circuit 100 is in the shutdown mode, the amplifier circuit 110 does not work, does not amplify the RF input signal RFin, and the output terminal OUT of the RF amplifier circuit has almost no signal fluctuation. When the control signal Vctrl received by the shutdown control circuit 130 is at the second level, the shutdown control circuit 130 turns on the amplifier circuit 110, the RF amplifier circuit 100 is in the gain mode, and the amplifier circuit 110 operates normally to amplify the RF input signal RFin. The RF output signal RFout output by the RF amplifier circuit 100 is an amplified signal of the RF input signal RFin.

[0046] Compared with the traditional amplifier circuit with a single-pole double-throw switch circuit, the radio frequency amplifier circuit of the utility model does not need to set up an additional single-pole double-throw switch, so it will not introduce the insertion loss of the radio frequency switch, and eliminates the problem of noise coefficient deterioration introduced by the cascaded radio frequency switch circuit, so it has higher gain and lower noise characteristics. In addition, there is no need for a single-pole double-throw switch to switch in the circuit structure, and the switching function can be realized only by the shutdown control circuit integrated inside the radio frequency amplifier circuit. The circuit structure is simple, uses fewer devices, and is easy to integrate into a single chip. It has the advantages of small size, low cost, and easy to use and easy to operate. At the same time, the input matching circuit and the output matching circuit can be combined to achieve low noise and high gain characteristics in the required working frequency band.

[0047] Figure 2 A schematic circuit diagram of a radio frequency amplification circuit according to a first embodiment of the utility model is shown.

[0048] like Figure 2 As shown, the input matching circuit 140 includes a second capacitor C2 and a first inductor L1, the second capacitor C2 is a DC blocking capacitor, and the first inductor L1 is a matching inductor. The first end of the second capacitor C2 is connected to the input terminal IN of the RF amplifier circuit as the input terminal of the input matching circuit 140, the second end of the second capacitor C2 is connected to the first end of the first inductor L1, and the second end of the first inductor L1 is connected to the first end of the amplifier circuit 110 as the output terminal of the input matching circuit 140. The input matching circuit 140 realizes low noise characteristics through minimum noise impedance matching at the input terminal IN of the RF amplifier circuit.

[0049] The output matching circuit 150 includes a second inductor L2 and a third capacitor C3, wherein the second inductor L2 is a matching inductor and the third capacitor C3 is a DC blocking capacitor. The first end of the second inductor L2 is connected to the power supply terminal VDD of the RF amplifier circuit to receive the power supply voltage VDD, and the second end of the second inductor L2 is connected to the first end of the third capacitor C3 and the second end of the amplifier circuit 110. The second end of the third capacitor C3 is connected to the output terminal OUT of the RF amplifier circuit as the output terminal of the output matching circuit 150. The output matching circuit 150 outputs the RF output signal RFout at the output terminal OUT of the RF amplifier circuit, and enables the RF amplifier circuit 100 to achieve good gain through conjugate impedance matching.

[0050] The amplifier circuit 110 may be a common source and common gate structure composed of two transistors of different sizes. The amplifier circuit 110 includes, for example, a second transistor M2 and a third transistor M3, wherein the second transistor M2 is a common source transistor, the third transistor M3 is a common gate transistor, and the gate sizes of the second transistor M2 and the third transistor M3 may be different or the same. The first end of the second transistor M2 is connected to the ground terminal GND of the radio frequency amplifier circuit, and the control end of the second transistor M2 serves as the first end of the amplifier circuit 110 and receives the first bias voltage VB. The first end of the third transistor M3 is connected to the second end of the second transistor M2, the second end of the third transistor M3 serves as the second end of the amplifier circuit 110, and the control end of the third transistor M3 receives the second bias voltage VA. The first end of the transistor may be a source, the second end may be a drain, and the control end may be a gate. Then the source of the second transistor M2 is grounded, its gate serves as the first end of the amplifier circuit 110, and its drain is connected to the source of the third transistor M3. The gate of the third transistor M3 is connected to the shutdown control circuit 130, and its drain serves as the second end of the amplifier circuit 110. In this embodiment, a common source and common gate structure is adopted. Compared with a common source circuit, the common source and common gate has better input-output isolation, can reduce the Miller effect, and has high output impedance, which is conducive to achieving high gain. The gate bias voltages of the second transistor M2 and the third transistor M3 are provided by the active bias circuit 120 and the shutdown control circuit 130 respectively.

[0051] The active bias circuit 120 includes a fourth resistor R4, a fifth resistor R5 and a fourth transistor M4. The first end of the fourth resistor R4 is connected to the second end of the amplifier circuit 110, and the connection node between the first end of the fourth resistor R4 and the second end of the third transistor M3 is a node C. The first end of the fifth resistor R5 is connected to the second end of the fourth resistor R4, and the second end of the fifth resistor R5 is connected to the first end of the amplifier circuit 110, and the first bias voltage VB is provided to the gate of the second transistor M2. The first end of the fourth transistor M4 is connected to the ground terminal GND of the radio frequency amplifier circuit, the second end of the fourth transistor M4 is connected to the second end of the fourth resistor R4, and the control end of the fourth transistor M4 is connected to the first end of the fifth resistor R5. The first end, the second end and the control end of the fourth transistor M4 are the source, the drain and the gate, respectively. Therefore, the source of the fourth transistor M4 is grounded, and its gate is connected to its drain, one end of the fourth resistor R4 and one end of the fifth resistor R5, respectively, the other end of the fifth resistor R5 is connected to the first end of the amplifier circuit 110, and the other end of the fourth resistor R4 is connected to the second end of the amplifier circuit 110. The first end of the amplifier circuit 110 can be regarded as an input end, and the second end of the amplifier circuit 110 can be regarded as an output end. By adjusting the width-to-length ratio of the gate of the fourth transistor M4 in the active bias circuit 120 and the resistance values ​​of the fourth resistor R4 and the fifth resistor R5, a stable DC operating point can be provided for the second transistor M2, and the influence of process fluctuations and temperature changes on the current can be effectively reduced. Specifically, when the active bias circuit 120 is working, the gate and drain of the fourth transistor M4 are short-circuited, and the drain-source voltage of the fourth transistor is equal to the gate-source voltage, and is greater than the difference between the gate-source voltage and the threshold voltage, that is, Vds4=Vgs4>Vgs4-Vth. The fourth transistor M4 is turned on and works in the saturation region, and the current generated is I4, then the first bias voltage VB=Vgs4=VDD-R4*I4, which can provide a stable first bias voltage VB. Therefore, there is no current in the gate of the second transistor M2, and the fifth resistor R5 does not divide the voltage. The fifth resistor R5 is used to isolate the active bias circuit 120 from the amplifier circuit 110 to prevent the AC signal path of the RF amplifier circuit 100 and the DC path of the active bias circuit 110 from affecting each other.

[0052] The shutdown control circuit 130 may include, for example, a first resistor R1 and a second resistor R2 connected in series between the second end of the amplifier circuit 110 and the ground terminal GND of the radio frequency amplifier circuit, and the common node of the first resistor R1 and the second resistor R2 is a first node A. The shutdown control circuit 130 also includes a first transistor M1 connected between the first node A and the ground terminal GND of the radio frequency amplifier circuit, the control end of the first transistor M1 receives the control signal Vctrl, and the first node A between the first resistor R1 and the first transistor M1 outputs a second bias voltage VA. The shutdown control circuit 130 may also include a third resistor R3 and a first capacitor C1. In this embodiment, the first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4 can all be radio frequency field effect transistors. The first end of the transistor can be regarded as a source, the second end of the transistor can be regarded as a drain, and the control end of the transistor can be regarded as a gate. The first end of the first resistor R1 is connected to the output end of the amplifier circuit 110, that is, connected to the node C, and can receive the voltage provided via the second inductor L2. The second end of the first resistor R1 is respectively connected to the gate of the third transistor M3 in the amplifier circuit 110, the first end of the second resistor R2, the first end of the first capacitor C1, and the drain of the first transistor M1. The second end of the second resistor R2 is grounded, the second end of the first capacitor C1 is grounded, the source of the first transistor M1 is grounded, the gate of the first transistor M1 is connected to the first end of the third resistor R3, and the second end of the third resistor R3 receives the control voltage Vctrl. The shutdown control circuit 130 mainly changes the switching state of the first transistor M1 through the control voltage Vctrl applied by the external DC power supply, thereby changing the gate bias voltage VA of the third transistor M3, and selecting to implement the gain mode or the shutdown mode, and saving power consumption when switching to the shutdown mode. In addition, the third resistor R3 is used to suppress the gate current of the first transistor M1, and the first capacitor C1 acts as a bypass capacitor.

[0053] In this embodiment, the first transistor M1 is an enhancement field effect transistor, and the level state of the control signal Vctrl includes a first level and a second level, the first level is, for example, a high level, and the second level is, for example, a low level. When the shutdown control circuit 130 receives a high-level control signal Vctrl, the first transistor M1 is turned on, the second bias voltage VA is pulled down to a low level, and the low-level second bias voltage VA is input to the amplifier circuit 110 to shut down the amplifier circuit 110. At this time, the circuit is in a shutdown mode, the amplifier circuit 110 does not work, and there is almost no signal fluctuation at the output end OUT of the RF amplifier circuit. When the shutdown control circuit 130 receives a low-level control signal Vctrl, the first transistor M1 is turned off, and the high-level second bias voltage VA is output through the first resistor R1 and the second resistor R2 to turn on the amplifier circuit 110. At this time, the circuit is in a gain mode, the amplifier circuit 110 works normally, and the signal is amplified. The amplitude of the signal at the output end OUT of the RF amplifier circuit is N times the amplitude of the signal at the input end IN of the RF amplifier circuit.

[0054] Specifically, the working principle of the RF amplifier circuit 100 of this embodiment is as follows: an external DC power supply provides an operating voltage to the RF amplifier circuit 100 through the power supply terminal VDD of the RF amplifier circuit, and the RF input signal RFin received by the antenna is input from the input terminal IN of the RF amplifier circuit, and enters the low-noise amplifier circuit 110 through the input matching circuit 140 composed of the DC blocking capacitor C2 and the matching inductor L1. The input terminal of the amplifier circuit 110 is the gate of the second transistor M2, and the RF signal is output and amplified by the drain of the third transistor M3 through the amplifier circuit composed of the second transistor M2 and the third transistor M3, and the amplified RF output signal RFout is output from the output terminal OUT of the RF amplifier circuit through the output matching inductor L2 and the DC blocking capacitor C3. When the control signal Vctrl is in a low level state, the first transistor M1 is turned off, and the second bias voltage VA of the gate of the third transistor M3 is obtained by dividing the first resistor R1 and the second resistor R2, and is greater than the turn-on voltage of the third transistor M3, and the third transistor M3 works normally and is in a gain mode. In the gain mode, the amplifier circuit 110 works normally, and the gain is GM, then Vout = GM*VFin. When the control signal Vctrl is in a high level state, the first transistor M1 is turned on, the second resistor R2 is approximately short-circuited, the second bias voltage VA of the gate of the third transistor M3 is less than the turn-on voltage of the third transistor M3, the third transistor M3 cannot work normally, and the RF amplifier circuit is in the shutdown mode. In the shutdown mode, the amplifier circuit 110 does not work, there is no output, and the signal at the output end of the RF amplifier circuit is almost zero.

[0055] The second bias voltage VA of the gate of the third transistor M3 can be adjusted by the shutdown control circuit 130 to realize the shutdown function of the amplifier circuit 110. In the entire RF low-noise amplifier circuit with shutdown function, the size of the transistor and the size of other control circuit components, bias components, and input-output matching circuit components are determined after comprehensive consideration of various indicators such as the operating frequency, gain, and noise of the entire circuit. Through the subsequent layout design and reasonable layout, the chip area can be reduced and the cost can be reduced.

[0056] The prior art provides a radio frequency amplifier circuit with a single-pole double-throw switch circuit, because a switch circuit is set outside the amplifier to switch between the gain mode and the shutdown mode. The switch circuit only controls the signal transmission path at the input and output ends of the amplifier to be cut off. In this case, the amplifier still works normally and still generates a large current. The radio frequency amplifier circuit of this embodiment integrates a shutdown control circuit inside the radio frequency amplifier circuit. The shutdown control circuit directly acts on the amplifier circuit to control the gate bias voltage of the amplifier circuit to control the conduction and shutdown of the transistor. In the shutdown mode, the amplifier circuit does not work, so no large current is generated, which saves power consumption. At the same time, an additional layer of protection is provided for the amplifier chip to prevent continuous high current from damaging the chip circuit. At the same time, integrating the shutdown control circuit inside the radio frequency amplifier circuit can simplify the application circuit design, reduce the devices used in the application circuit, reduce costs, and reduce circuit size.

[0057] Figure 3 A schematic block diagram of a radio frequency amplification circuit according to a second embodiment of the present utility model is shown.

[0058] like Figure 3 As shown, the low-noise RF amplifier circuit 100 with a shutdown function of this embodiment is a single integrated chip, which may include multiple pins, such as an IN pin, an OUT pin, a CTR pin and a GND pin. The IN pin is the input end of the RF amplifier circuit, which is used to receive the RF input signal RFin, and the OUT pin is the output end of the RF amplified signal, which is used to output the RF output signal RFout. The GND pin is the ground terminal of the RF amplifier circuit, which is connected to the reference ground. The CTR pin is the control terminal of the RF amplifier circuit, which is used to receive the control signal Vctrl and provide it to the inside of the chip. The RF amplifier circuit 100 has an amplifier circuit 110, an active bias circuit 120 and a shutdown control circuit 130 integrated inside the chip. The connection mode and signal transmission between the amplifier circuit 110, the active bias circuit 120 and the shutdown control circuit 130 and the connection relationship between the various pins of the chip are the same as those in the first embodiment, and will not be repeated here.

[0059] The difference between this embodiment and the first embodiment is that, in this embodiment, the input matching circuit 140 and the output matching circuit 150 are both connected to the outside of the chip. The output matching circuit 150 is connected to the outside of the output terminal OUT of the RF amplifier circuit. The output matching circuit 150 provides the power supply voltage VDD of the power supply terminal of the RF amplifier circuit to the second end of the amplifier circuit 110 through the output terminal OUT of the RF amplifier circuit, and the output end of the output matching circuit 150 is used to output the RF output signal RFout. The output matching circuit 150 is used to achieve conjugate impedance matching and reduce the power loss of the RF output signal RFout. The input matching circuit 140 is connected to the outside of the input terminal IN of the RF amplifier circuit, and the RF input signal RFin is provided to the first end of the amplifier circuit 110 via the input matching circuit 140. The input matching circuit 140 is used to reduce the noise of the RF input signal RFin.

[0060] Figure 4 A schematic circuit diagram of a radio frequency amplification circuit according to a second embodiment of the utility model is shown.

[0061] like Figure 4 As shown, the input matching circuit 140 of this embodiment includes a second capacitor C2 and a first inductor L1, the second capacitor C2 is a DC blocking capacitor, and the first inductor L1 is a matching inductor. The first end of the second capacitor C2 receives the RF input signal RFin, the second end of the second capacitor C2 is connected to the first end of the first inductor L1, and the second end of the first inductor L1 is used as the output end of the input matching circuit 140, connected to the input end IN of the RF amplifier circuit, and also connected to the first end of the amplifier circuit 110. The output matching circuit 150 includes a second inductor L2 and a third capacitor C3, the second inductor L2 is a matching inductor, and the third capacitor C3 is a DC blocking capacitor. The first end of the second inductor L2 is connected to the power supply end to receive the power supply voltage VDD, and the second end of the second inductor L2 is connected to the first end of the third capacitor C3, the output end OUT of the RF amplifier circuit, and the second end of the amplifier circuit 110. The second end of the third capacitor C3 is used as the output end of the output matching circuit 150 to output the RF output signal RFout.

[0062] The amplifier circuit 110 may be a common source and common gate structure composed of two transistors of different sizes. The amplifier circuit 110, for example, includes a second transistor M2 and a third transistor M3, wherein the second transistor M2 is a common source transistor, the third transistor M3 is a common gate transistor, and the gate sizes of the second transistor M2 and the third transistor M3 may be different or the same. The active bias circuit 120 includes a fourth resistor R4, a fifth resistor R5 and a fourth transistor M4. The shutdown control circuit 130 may, for example, include a first resistor R1 and a second resistor R2 connected in series between the second end of the amplifier circuit 110 and the ground terminal GND of the radio frequency amplifier circuit, and the common node of the first resistor R1 and the second resistor R2 is a first node A. The shutdown control circuit 130 also includes a first transistor M1 connected between the first node A and the ground terminal GND of the radio frequency amplifier circuit, the control end of the first transistor M1 receives a control signal Vctrl, and the first node A between the first resistor R1 and the first transistor M1 outputs a second bias voltage VA. The shutdown control circuit 130 may also include a third resistor R3 and a first capacitor C1. In this embodiment, the connection relationship, signal transmission relationship and working principle between the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5 and the capacitor C1 inside the chip can be exactly the same as those in the first embodiment and will not be repeated here.

[0063] Figure 5 A schematic circuit diagram of a radio frequency amplification circuit according to a third embodiment of the utility model is shown.

[0064] like Figure 5 As shown, the radio frequency amplifier circuit 100 of this embodiment can be used together with the first embodiment ( Figure 1 and Figure 2 ) has the same structure as the RF amplifier circuit of the first embodiment, and the 5 ports and 5 internally integrated modules included in the RF amplifier circuit 100 are also the same as those in the first embodiment, and will not be repeated here. The RF amplifier circuit 100 is a fully integrated single chip. The only difference between this embodiment and the first embodiment is that, in this embodiment, the first transistor M1 in the shutdown control circuit 130 is a depletion-type field effect transistor, and the depletion-type field effect transistor can be the opposite of the type of the enhancement-type field effect transistor in the first embodiment. Correspondingly, the control signal Vctrl is also different from the first embodiment. Figure 5In this embodiment, the level state of the control signal Vctrl includes a first level and a second level, the first level of the control signal Vctrl is a high level, and the second level of the control signal Vctrl is a negative voltage. Then, when the control signal Vctrl received by the shutdown control circuit 130 is at the first level, the first transistor M1 is turned on, the shutdown control circuit 130 turns off the amplifier circuit 110, and the RF amplifier circuit 100 does not amplify the RF input signal RFin; when the control signal Vctrl received by the shutdown control circuit 130 is at the second level, the first transistor M1 is turned off, the shutdown control circuit 130 turns on the amplifier circuit 110, the RF amplifier circuit 100 amplifies the RF input signal RFin, and the RF output signal RFout output by the RF amplifier circuit 100 is an amplified signal of the RF input signal RFin.

[0065] Figure 6 Schematic waveform diagrams of various signals when the radio frequency amplifying circuit according to the first embodiment and the second embodiment of the utility model works in the gain mode are shown.

[0066] Figure 6 The first and second embodiments are shown in Figure 1-Figure 4 ), a first bias voltage VB, a second bias voltage VA, a radio frequency input signal RFin, and a radio frequency output signal RFout in a gain mode of RF amplifier circuit 100. The horizontal axis represents time, and the unit is, for example, nanosecond ns, and the vertical axis represents voltage, and the unit is, for example, volt V. The external DC power supply provides a 5V power supply voltage to the radio frequency amplifier circuit 100 through the power supply terminal VDD of the radio frequency amplifier circuit, and the active bias circuit 120 provides a stable operating voltage, i.e., the first bias voltage VB, to the gate of the second transistor M2 through the 5V power supply voltage. Another external DC power supply provides a low level (0V, second level) or high level (5V, first level) control signal Vctrl to the radio frequency amplifier circuit 100 through the control terminal CTR of the radio frequency amplifier circuit.

[0067] like Figure 6As shown, taking the signal fluctuation within 1.1ns as an example, the control signal Vctrl is a second level of a low level, such as 0V, then the first transistor M1 of the enhancement field effect transistor is turned off, and the first resistor R1 and the second resistor R2 provide a second bias voltage VA by voltage division, and the second bias voltage VA is relatively high, for example, fluctuating around 3.5V-4V (for example, varying between 3.6V-3.8V). The first bias voltage VB is provided by the active bias circuit 120 and is stable at around 0.5V (for example, fluctuating between 440mV-540mV). Thus, the RF amplifier circuit 100 operates in the gain mode, and the RF input signal RFin is a signal with a relatively small amplitude, for example, fluctuating between -40mV and 40mV. The RF amplifier circuit 100 amplifies the relatively small signal, and the amplified RF output signal RFout fluctuates between -0.5V and 0.5V, and the amplitude of the signal is greatly expanded.

[0068] Figure 7 Schematic waveform diagrams of various signals when the radio frequency amplifying circuit according to the first embodiment and the second embodiment of the utility model works in the shutdown mode are shown.

[0069] Figure 7 The first and second embodiments are shown in Figure 1-Figure 4 ), a schematic waveform diagram of a control signal Vctrl, a first bias voltage VB, a second bias voltage VA, an RF input signal RFin, and an RF output signal RFout in the shutdown mode of the RF amplifier circuit 100. The horizontal axis represents time, and the unit is, for example, nanoseconds ns, and the vertical axis represents voltage, and the unit is, for example, volts V. The external DC power supply provides a 5V power supply voltage to the RF amplifier circuit 100 through the power supply terminal VDD of the RF amplifier circuit, and the active bias circuit 120 provides a stable operating voltage, i.e., the first bias voltage VB, to the gate of the second transistor M2 through the 5V power supply voltage. Another external DC power supply provides a low-level (0V) or high-level (5V) control signal Vctrl to the RF amplifier circuit 100 through the control terminal CTR of the RF amplifier circuit.

[0070] like Figure 7 As shown, taking the signal fluctuation within 1.1ns as an example, the control signal Vctrl is at a first high level, for example, 5V, then the first transistor M1 of the enhancement field effect transistor is turned on, providing a second bias voltage VA of a lower voltage, and the second bias voltage VA is less than the turn-on voltage of the third transistor M3, for example Figure 7The second bias voltage VA can be stabilized at about 0.2V. The first bias voltage VB is provided by the active bias circuit 120 and is stabilized at about 0.5V (for example, fluctuating between 440mV-540mV). Thus, the RF amplifier circuit 100 operates in the shutdown mode, and the RF input signal RFin is a signal with a small amplitude, for example, fluctuating between -40mV and 40mV. The RF amplifier circuit 100 cannot amplify the small signal, so the RF output signal RFout fluctuates around 0V.

[0071] Figure 8 A schematic waveform diagram of various signals when the radio frequency amplification circuit according to the third embodiment of the utility model works in a gain mode is shown.

[0072] Figure 8 A third embodiment is shown in Figure 5 ) in the gain mode of FIG. 1 . The horizontal axis represents time, and the unit is, for example, nanosecond ns, and the vertical axis represents voltage, and the unit is, for example, volt V. The external DC power supply provides a 5V power supply voltage to the RF amplifier circuit 100 through the power supply terminal VDD of the RF amplifier circuit, and the active bias circuit 120 provides a stable operating voltage, i.e., the first bias voltage VB, to the gate of the second transistor M2 through the 5V power supply voltage. Another external DC power supply provides a control signal Vctrl of a second level (negative voltage, such as -1V) or a first level (high level, such as 5V) to the RF amplifier circuit 100 through the control terminal CTR of the RF amplifier circuit.

[0073] like Figure 8 As shown, taking the signal fluctuation within 1.1ns as an example, the control signal Vctrl is the second level, that is, a negative voltage, for example, -1V. Then the first transistor M1 of the depletion field effect transistor is turned off, and the first resistor R1 and the second resistor R2 provide a second bias voltage VA by voltage division. The second bias voltage VA is relatively high, for example, fluctuating around 3.5V-4V (for example, varying between 3.6V-3.8V). The first bias voltage VB is provided by the active bias circuit 120 and is stable at around 0.5V (for example, fluctuating between 440mV-540mV). Thus, the RF amplifier circuit 100 operates in the gain mode, and the RF input signal RFin is a signal with a smaller amplitude, for example, fluctuating between -40mV and 40mV. The RF amplifier circuit 100 amplifies the smaller signal, and the amplified RF output signal RFout fluctuates between -0.5V and 0.5V, and the amplitude of the signal is greatly expanded.

[0074] Fig. 9A schematic waveform diagram of various signals when the radio frequency amplification circuit according to the third embodiment of the utility model works in the shutdown mode is shown.

[0075] Fig. 9 A third embodiment is shown in Figure 5 ), a schematic waveform diagram of a control signal Vctrl, a first bias voltage VB, a second bias voltage VA, a radio frequency input signal RFin, and a radio frequency output signal RFout in the shutdown mode of the RF amplifier circuit 100. The horizontal axis represents time, and the unit is, for example, nanoseconds ns, and the vertical axis represents voltage, and the unit is, for example, volts V. The external DC power supply provides a 5V power supply voltage to the RF amplifier circuit 100 through the power supply terminal VDD of the RF amplifier circuit, and the active bias circuit 120 provides a stable operating voltage, i.e., the first bias voltage VB, to the gate of the second transistor M2 through the 5V power supply voltage. Another external DC power supply provides a control signal Vctrl of a second level (negative voltage, such as -1V) or a first level (high level, such as 5V) to the RF amplifier circuit 100 through the control terminal CTR of the RF amplifier circuit.

[0076] like Fig. 9 As shown, taking the signal fluctuation within 1.1ns as an example, the control signal Vctrl is a first high level, such as 5V, and the first transistor M1 of the depletion field effect transistor is turned on to provide a second bias voltage VA with a lower voltage. The second bias voltage VA is less than the turn-on voltage of the third transistor M3, for example Fig. 9 The second bias voltage VA can be stabilized at about 0.2V. The first bias voltage VB is provided by the active bias circuit 120 and is stabilized at about 0.5V (for example, fluctuating between 440mV-540mV). Thus, the RF amplifier circuit 100 operates in the shutdown mode, and the RF input signal RFin is a signal with a small amplitude, for example, fluctuating between -40mV and 40mV. The RF amplifier circuit 100 cannot amplify the small signal, so the RF output signal RFout fluctuates around 0V.

[0077] Fig.10 A waveform comparison diagram of the power supply current when the radio frequency amplifier circuit according to the first to third embodiments of the utility model operates in a gain mode and a shutdown mode is shown.

[0078] Fig.10 The horizontal axis represents time, and the unit is, for example, nanoseconds ns. The vertical axis represents current, and the unit is, for example, milliamperes mA. The power supply current is, for example, the working current on the power supply terminal VDD.

[0079] Combination Figure 6 , Figure 8 and Fig.10 When the control signal Vctrl is at the second level, the circuit works in the gain mode, and the voltage waveforms of the signals are as follows: Figure 6 or Figure 8 As shown. At this time, the second bias voltage VA of the gate of the third transistor M3 is greater than its turn-on voltage, and the third transistor M3 works normally. In this gain mode, the power supply terminal VDD will generate a large operating current Ion, and Ion is the current on the VDD power supply. At this time, Ion fluctuates between 50mA-80mA, for example, between 58mA and 73mA.

[0080] Combination Figure 7 , Fig. 9 and Fig.10 When the control signal Vctrl is at the first level, the circuit works in the shutdown mode, and the voltage waveforms of the signals are as follows: Figure 7 or Fig. 9 As shown. At this time, the second bias voltage VA of the gate of the third transistor M3 is less than its turn-on voltage, and the third transistor M3 cannot work normally and has no amplification effect. In this shutdown mode, the power supply terminal VDD generates a very small shutdown current Ioff, and Ioff is the current on the VDD power supply. At this time, Ioff is, for example, about 2.6mA-2.8mA, which is almost zero.

[0081] In summary, the low-noise RF amplifier circuit with a shutdown function disclosed in the embodiment of the utility model is a fully integrated single chip, which reduces the chip area and cost. The circuit is composed of two transistors of different sizes to form a common source and common gate structure for amplifying signals. At the same time, a shutdown control circuit is integrated on a single chip, which has a shutdown bias function and can adjust the bias operating point of the amplifier circuit to select the amplifier to work in gain mode or shutdown mode. When the amplifier works in shutdown mode, it has lower power consumption and higher isolation, and the shutdown function can make the system-level response faster and safer, while reducing power consumption and cost. Provide an additional layer of protection for the chip to prevent high current from damaging the chip circuit. The low-noise RF amplifier circuit with a shutdown function is particularly suitable for application in TDD time division duplex communication systems. Moreover, the RF amplifier circuit of this embodiment achieves low noise and high gain characteristics in the required operating frequency band through an input matching circuit and an output matching circuit.

[0082] The embodiments of the present utility model are as described above, and these embodiments do not describe all the details in detail, nor do they limit the utility model to the specific embodiments described. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the utility model, so that technicians in the relevant technical field can make good use of the utility model and the modified use based on the utility model. The scope of protection of the utility model shall be based on the scope defined by the claims of the utility model.

Claims

1. A radio frequency amplifier circuit, characterized in that: include: An input end of a radio frequency amplifier circuit, an output end of a radio frequency amplifier circuit, a control end of a radio frequency amplifier circuit, and a ground end of a radio frequency amplifier circuit; An active bias circuit connected between the first terminal and the second terminal of the amplifier circuit, wherein the active bias circuit outputs a first bias voltage; an amplifier circuit, receiving a radio frequency input signal from an input terminal of the radio frequency amplifier circuit, receiving the first bias voltage at a first terminal of the amplifier circuit, and outputting a radio frequency output signal from an output terminal of the radio frequency amplifier circuit; as well as, A shutdown control circuit, wherein the shutdown control circuit is connected between the output terminal of the radio frequency amplifying circuit and the ground terminal of the radio frequency amplifying circuit, the shutdown control circuit is also connected to the control terminal of the radio frequency amplifying circuit and receives a control signal, and the shutdown control circuit provides a second bias voltage to the amplifying circuit to control the on or off of the amplifying circuit; When the control signal received by the shutdown control circuit is at a first level, the shutdown control circuit shuts down the amplifier circuit, and the radio frequency amplifier circuit does not amplify the radio frequency input signal; When the control signal received by the shutdown control circuit is at the second level, the shutdown control circuit turns on the amplifier circuit, the RF amplifier circuit amplifies the RF input signal, and the RF output signal output by the RF amplifier circuit is an amplified signal of the RF input signal.

2. The radio frequency amplifier circuit according to claim 1, characterized in that: Also includes: an output matching circuit, wherein the output matching circuit provides a power supply voltage at a power supply terminal of the radio frequency amplifying circuit to a second terminal of the amplifying circuit; The output matching circuit realizes conjugate impedance matching and reduces the power loss of the radio frequency output signal.

3. The radio frequency amplifier circuit according to claim 1, characterized in that: Also includes: An input matching circuit, wherein the radio frequency input signal is provided to the first end of the amplifying circuit via the input matching circuit; The input matching circuit reduces noise of the RF input signal.

4. The radio frequency amplifier circuit according to claim 2, characterized in that: The output matching circuit is connected to the outside of the output end of the radio frequency amplifying circuit.

5. The radio frequency amplifier circuit according to claim 2, characterized in that: The radio frequency amplifying circuit also includes a power supply terminal of the radio frequency amplifying circuit, and the output matching circuit is connected between the power supply terminal of the radio frequency amplifying circuit, the second terminal of the amplifying circuit and the output terminal of the radio frequency amplifying circuit.

6. The radio frequency amplification circuit according to claim 3, characterized in that: The input matching circuit is connected to the outside of the input end of the radio frequency amplifying circuit.

7. The radio frequency amplification circuit according to claim 3, characterized in that: The input matching circuit is connected between the input end of the radio frequency amplifying circuit and the first end of the amplifying circuit.

8. The radio frequency amplifier circuit according to any one of claims 1 to 3, characterized in that: The shutdown control circuit comprises: a first resistor and a second resistor connected in series, wherein a first end of the first resistor is connected to a second end of the amplifier circuit, a second end of the second resistor is connected to a ground terminal of the amplifier circuit, a second end of the first resistor is connected to a first end of the second resistor, and a connection node between the first resistor and the second resistor is a first node; A first transistor is connected between the first node and a ground terminal of the radio frequency amplifying circuit; a control terminal of the first transistor receives the control signal, and the first node outputs the second bias voltage.

9. The radio frequency amplification circuit according to claim 8, characterized in that: The first transistor is an enhancement mode field effect transistor.

10. The radio frequency amplification circuit according to claim 8, characterized in that: The first transistor is a depletion-type field effect transistor.

11. The radio frequency amplification circuit according to claim 8, characterized in that: The shutdown control circuit further includes: a first capacitor connected between the first node and a ground terminal of the radio frequency amplifying circuit; and A third resistor, wherein a first end of the third resistor is connected to the control end of the first transistor, and a second end of the third resistor receives the control signal.

12. The radio frequency amplification circuit according to claim 9, characterized in that: The first level of the control signal is a high level, and the second level of the control signal is a low level.

13. The radio frequency amplification circuit according to claim 10, characterized in that: The first level of the control signal is a high level, and the second level of the control signal is a negative voltage.

14. The radio frequency amplification circuit according to any one of claims 1 to 3, characterized in that: The amplifying circuit comprises: a second transistor, wherein a first terminal of the second transistor is connected to a ground terminal of the radio frequency amplifying circuit, and a control terminal of the second transistor serves as a first terminal of the amplifying circuit and receives the first bias voltage; and A third transistor, wherein a first end of the third transistor is connected to the second end of the second transistor, the second end of the third transistor serves as the second end of the amplifier circuit, and a control end of the third transistor receives the second bias voltage.

15. The radio frequency amplification circuit according to claim 14, characterized in that: The second transistor and the third transistor form a common source and common gate structure, and the gate sizes of the second transistor and the third transistor are different or the same.

16. The radio frequency amplification circuit according to any one of claims 1 to 3, characterized in that: The active bias circuit comprises: a fourth resistor, a first end of the fourth resistor being connected to the second end of the amplifying circuit; a fifth resistor, a first end of the fifth resistor being connected to the second end of the fourth resistor, and a second end of the fifth resistor being connected to the first end of the amplifying circuit; and A fourth transistor, wherein a first end of the fourth transistor is connected to the ground end of the radio frequency amplification circuit, a second end of the fourth transistor is connected to the second end of the fourth resistor, and a control end of the fourth transistor is connected to the first end of the fifth resistor.

17. The radio frequency amplifying circuit according to claim 3, characterized in that: The input matching circuit comprises: a second capacitor, wherein a first end of the second capacitor receives the RF input signal; A first inductor, wherein a first end of the first inductor is connected to a second end of the second capacitor, and a second end of the first inductor is connected to a first end of the amplifier circuit.

18. The radio frequency amplifying circuit according to claim 2, characterized in that: The output matching circuit comprises: a second inductor, wherein a first end of the second inductor is connected to a power supply end of the radio frequency amplifying circuit, and a second end of the second inductor is connected to a second end of the amplifying circuit; and A third capacitor, wherein a first end of the third capacitor is connected to the second end of the second inductor, and a second end of the third capacitor outputs the RF output signal.

19. The radio frequency amplification circuit according to any one of claims 1 to 3, characterized in that: The radio frequency amplification circuit is a single integrated chip.

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