Galvanometer device and MEMS galvanometer integrated products

Abstract

The present application provides a galvanometer device and a MEMS galvanometer integrated product, wherein the galvanometer device comprises: a frame, comprising a fixed structure and a movable frame connected to the fixed structure via a slow-rotating shaft beam; a reflector, connected to the movable frame via a fast-rotating shaft beam; a sensor component, comprising a first sensor element arranged corresponding to the slow-rotating shaft beam, and / or a second sensor element arranged corresponding to the fast-rotating shaft beam; a stress isolation structure, comprising a stress isolation groove arranged on the outer side of the slow-rotating shaft beam, for isolating stress transmission in a direction perpendicular to the extension direction of the stress isolation groove.

Description

Technical Field

[0001] The present application relates to the field of micro-opto-mechanical-mechanical technology, and in particular to a galvanometer device and a MEMS galvanometer integrated product. Background Art

[0002] A micro electro mechanical system (MEMS) galvanometer is a device made with MEMS technology, in which the reflector deflects according to a certain rule under the action of a driver. Currently, MEMS galvanometers are widely used in many fields, such as optical communication, laser projection, 3D imaging, laser radar, etc.

[0003] In existing galvanometer devices, the deflection angle detection of the reflector is usually tested using a piezoresistive sensor. The piezoresistive sensor is integrated near the torsion axis through the MEMS process. When the galvanometer is working, the stress on the torsion axis changes accordingly. The piezoresistive sensor detects the stress change and obtains the working angle of the galvanometer. However, when the galvanometer is packaged, the packaging material is usually different from the chip material, and there is a difference in their thermal expansion coefficients, which will cause thermal stress caused by the mismatch of thermal expansion coefficients, which will affect the performance of the piezoresistive sensor, resulting in inaccurate detection of the deflection angle of the reflector, and further affect the overall working performance of the galvanometer device. Utility Model Content

[0004] In order to solve the existing technical problems, the present application provides a galvanometer device and a MEMS galvanometer integrated product with more accurate detection and control of mirror deflection and improved working performance.

[0005] In a first aspect, the present application provides a galvanometer device, comprising:

[0006] A frame, comprising a fixed structure and a movable frame connected to the fixed structure via a slow-rotating shaft beam;

[0007] A reflector, connected to the movable frame via a fast-rotating shaft beam;

[0008] A sensing assembly, comprising a first sensing element arranged corresponding to the slow-rotating shaft beam, and / or a second sensing element arranged corresponding to the fast-rotating shaft beam;

[0009] The stress isolation structure comprises a stress isolation groove arranged on the outer side of the slow-rotating shaft beam, and is used to isolate the stress transmission in the direction perpendicular to the extension direction of the stress isolation groove.

[0010] In a second aspect, the present application provides a MEMS galvanometer integrated product, including the galvanometer device described in any embodiment of the present application;

[0011] The MEMS galvanometer integrated product is one of the following: an optical communication system, a laser radar system, a laser projection system, and a three-dimensional imaging system.

[0012] The galvanometer device provided in the above embodiment is used to isolate stress transfer in the direction perpendicular to the extension direction of the stress isolation groove by setting a stress isolation groove on the outer side of the slow-rotating shaft beam, thereby reducing or eliminating the influence of thermal stress caused by the mismatch of thermal expansion coefficients due to the different packaging materials of the galvanometer device and the chip material on the accuracy of the sensor component in detecting the deflection angle of the reflector, thereby obtaining a high-precision detection signal of the deflection angle of the reflector, and the detection of the deflection angle of the reflector is more accurate, and the control of the deflection angle of the reflector can also be more accurate, thereby improving the overall working performance of the galvanometer device.

[0013] In the above embodiments, the MEMS galvanometer integrated product and the corresponding galvanometer device embodiments belong to the same concept, and thus have the same technical effects as the various galvanometer device embodiments, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 Schematic diagram of the structure of a galvanometer device in one embodiment.

[0015] Figure 2 for Figure 1 A schematic diagram of a rear perspective view of the galvanometer device shown.

[0016] Figure 3 FIG. 4 is a schematic diagram showing the position of a piezoresistive sensor element in an embodiment.

[0017] Figure 4 Schematic diagram of the structure of a galvanometer device in another embodiment.

[0018] Figure 5 Schematic diagram of the structure of a galvanometer device in another embodiment.

[0019] Figure 6 Schematic diagram of the structure of a galvanometer device in yet another embodiment.

[0020] Component Symbols:

[0021] Frame 10, movable frame 11, fixed structure 12, coil 15, sensor assembly 20, first sensor element 21, second sensor element 22, reflector 30, slow-rotating shaft beam 40, first connecting end 41, second connecting end 42, main beam portion 43, fast-rotating shaft beam 50, beam body 51, center beam 511, extension beam 512, transition connecting end 52, stress isolation structure 60, transverse integral groove 61, first direction isolation groove 62, second direction isolation groove 63, first reinforcement section 71, second reinforcement section 72, third reinforcement section 73, fourth reinforcement section 74. DETAILED DESCRIPTION

[0022] The technical solution of the utility model is further elaborated in detail below in conjunction with the accompanying drawings and specific embodiments of the specification.

[0023] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0024] In the following description, the expression "some embodiments" is involved, which describes a subset of all possible embodiments. It should be noted that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict.

[0025] In the following description, the terms "first, second, third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first, second, third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0026] See also Figure 1 , a galvanometer device provided in one embodiment of the present application, the galvanometer device includes: a frame 10, including a fixed structure 12 and a movable frame 11 connected to the fixed structure 12 through a slow-rotating shaft beam 40; a reflector 30, connected to the movable frame 11 through a fast-rotating shaft beam 50; a sensor component 20, including a first sensor element 21 arranged corresponding to the slow-rotating shaft beam 40, and / or a second sensor element 22 arranged corresponding to the fast-rotating shaft beam 50; a stress isolation structure 60, including a stress isolation groove arranged on the outer side of the slow-rotating shaft beam 40, for isolating stress transfer in a direction perpendicular to the extension direction of the stress isolation groove.

[0027] The galvanometer device also includes a driver. According to different driver types, the galvanometer device can be generally divided into electrostatic drive, electromagnetic drive, piezoelectric drive, and electrothermal drive. Under the action of the driver, the movable frame 11 twists around the axis of the slow-rotating shaft beam 40, and the reflector 30 is connected to the movable frame 11, and the reflector 30 can twist around the axis of the slow-rotating shaft beam 40 together with the movable frame 11; at the same time, under the action of the driver, the movable frame 11 twists around the axis of the fast-rotating shaft 50, driving the reflector 30 to twist around the axis of the fast-rotating shaft beam 50; in this way, the reflector 30 can be twisted in a first direction (such as the y-axis direction) with the slow-rotating shaft beam 40 as the axis and in a second direction (such as the x-axis direction) with the fast-rotating shaft beam 50 as the axis, respectively. The reflector 30 deflects in the first direction and the second direction at a predetermined frequency and deflection angle, respectively, to reverse the direction of the optical path or adjust the deflection angle of the optical path, and adjust the direction of the incident light beam.

[0028] In this embodiment, the driver includes a coil 15 disposed on the movable frame 11 and a magnet group (not shown) disposed below the frame 10. The coil 15 is disposed on the upper surface of the movable frame 11, and is subjected to electromagnetic force in the magnetic field after being energized, driving the movable frame 11 and the reflective mirror 30 to twist around the axis of the slow-rotating shaft beam 40 and the axis of the fast-rotating shaft beam 50, respectively.

[0029] Among them, the first sensor element 21 is set corresponding to the slow-rotating shaft beam 40, and is used to detect the deflection angle of the slow-rotating shaft beam 40. The second sensor element 22 is set corresponding to the fast-rotating shaft beam 50, and is used to detect the deflection angle of the fast-rotating shaft beam 50. The sensor assembly 20 may only include the first sensor element 21, in which case the galvanometer device mainly detects the deflection angle of the slow-rotating shaft beam 40 through the first sensor element 21, so as to improve the deflection control accuracy of the slow-rotating shaft beam 40 and thus improve the accuracy of the light path adjustment of the reflector 30; or only include the second sensor element 22, in which case the galvanometer device mainly detects the deflection angle of the fast-rotating shaft beam 50 through the second sensor element 22, so as to improve the deflection control accuracy of the fast-rotating shaft beam 50 and thus improve the accuracy of the light path adjustment of the reflector 30; it may also include the first sensor element 21 and the second sensor element 22 at the same time, in which case the galvanometer device can improve the accuracy of the light path adjustment of the reflector 30 by respectively detecting the deflection angles of the slow-rotating shaft beam 40 and the fast-rotating shaft beam 50.

[0030] In the above embodiment, a stress isolation groove is provided on the outer side of the slow-rotating shaft beam 40 to isolate the stress transfer in the direction perpendicular to the extension direction of the stress isolation groove, thereby reducing or eliminating the influence of the thermal stress caused by the mismatch of thermal expansion coefficients due to the different packaging materials of the galvanometer device and the chip materials on the accuracy of the sensor component 20 in detecting the deflection angle of the reflector 30, thereby obtaining a high-precision detection signal of the deflection angle of the reflector 30, and the detection of the deflection angle of the reflector 30 is more accurate, and thus the control of the deflection angle of the reflector 30 can also be more accurate, thereby improving the overall working performance of the galvanometer device.

[0031] Optionally, the slow-rotating shaft beam 40 includes a first connecting end 41 connected to the movable frame 11, a main beam portion 43 extending inwardly from the first connecting end 41 to form a plurality of parallel straight line segments, and a second connecting end 42 connecting the main beam portion 43 to the fixed structure 12. The plurality of straight line segments are arranged parallel to each other and spaced apart, and the starting point where the first connecting end 41 is connected to the movable frame 11 and the ending point where the second connecting end 42 is connected to the fixed structure 12 are both located on the axis of the slow-rotating shaft beam 40.

[0032] In this embodiment, the first connection end 41 and the second connection end 42 are respectively in a straight line shape, wherein, in the slow-rotating shaft beam 40, at least one straight line segment is aligned with the connection point of the fixed structure 12 and is located on the axis of the slow-rotating shaft beam 40. Among the multiple straight line segments of the slow-rotating shaft beam 40, one straight line segment is set to coincide with the axis of the slow-rotating shaft beam 40, so that the multiple straight line segments of the slow-rotating shaft beam 40 form a symmetrical state, and the slow-rotating shaft beam 40 including the first connection end 41 and the second connection end 42 is in a centrally symmetrical state as a whole, which is more conducive to improving the control of the torsion angle accuracy of the slow-rotating shaft beam 40.

[0033] Optionally, the first connecting end 41 and the second connecting end 42 are respectively located on opposite sides of the axis of the slow-rotating shaft beam 40, and the first sensor element 21 is disposed at the end of the second connecting end 42 and on the axis of the slow-rotating shaft beam 40. In this embodiment, the first sensor element 21 is disposed at the portion where the second connecting end 42 is connected to the fixed structure 12. The slow-rotating shaft beam 40 includes two, which are symmetrically disposed on opposite sides of the fixed structure 12 and between the movable frame 11, and the axes of the two slow-rotating shaft beams 40 are located on the same straight line. The first sensor element 21 can be disposed only corresponding to one of the slow-rotating shaft beams 40 to detect the torsion angle of the slow-rotating shaft beam 40.

[0034] Optionally, the fast-rotating axis beam 50 includes a beam body 51 and a transition connection end 52 connected to the reflector 30, the beam body 51 includes a central beam 511 and an extension beam 512 bent and extended from the central beam 511 to opposite sides, and the width of the transition connection end 52 is equal to the width of the beam body 51. The beam body 51 of the fast-rotating axis beam 50 is a serpentine shape formed by the central beam 511 and the extension beam 512, and the width of the transition connection end 52 at the connection between the serpentine-shaped beam body 51 and the reflector 30 is designed to be substantially equal to the width of the beam body 51, which can effectively reduce the dynamic deformation of the connection between the reflector 30 and the fast-rotating axis beam 50, and improve the mirror surface utilization rate of the reflector 30. In this embodiment, the design of the larger width of the transition connection end 52 in the fast-rotating axis beam 50 improves the mirror surface utilization rate of the reflector 30, which is conducive to reducing the overall size of the chip.

[0035] It should be noted that the width design of the transition connection end 52 of the fast-rotating axis beam 50 can be used to set a reinforcement structure on the back of the transition connection end 52 to further enhance the connection strength between the reflector 30 and the fast-rotating axis beam 50 and reduce the influence of dynamic deformation on the deflection angle precision control of the reflector 30. Figure 2In an optional example, the reinforcement structure includes a first reinforcement section 71 and a second reinforcement section 72 respectively arranged at the transition connection ends 52 of the two fast-turning shaft beams 50, and a third reinforcement section 73 and a fourth reinforcement section 74 connected between the opposite ends of the first reinforcement section 71 and the second reinforcement section 72. The third reinforcement section 73 and the fourth reinforcement section 74 are respectively formed into a curved shape at the connection with the first reinforcement section 71 and the second reinforcement section 72. In this way, the protrusion at the connection between the reflector 30 and the transition connection end 52 can be avoided, so that the third reinforcement section 73 and the fourth reinforcement section 74 can be as close to the opposite sides of the reflector 30 as possible, thereby increasing the area covered by the overall reinforcement structure on the back side of the reflector 30 and reducing the dynamic deformation of the mirror surface 30.

[0036] Optionally, in each fast-turning axis beam 50, the width of the central beam 511 is greater than the width of the extension beam 512. The central beam 511 is located on the axis of the fast-turning axis beam 50. Under the action of the driving force, the reflector 30 twists around the fast-turning axis beam 50, specifically, the reflector 30 twists around the central beam 511 in the fast-turning axis beam 50 as the axis. The design of widening the width of the central beam 511 is conducive to improving the reliability of the torsion of the reflector 30 around the fast-turning axis beam 50. Among them, the extension beam 512 is symmetrically arranged relative to the central beam 511. The symmetrical fast-turning axis beam 50 is conducive to improving the balance of the torsion of the reflector 30 around the fast-turning axis beam 50. At the same angle, the maximum stress generated on the fast-turning axis beam 50 is smaller, and the working angle of the reflector 30 can be larger. Among them, the number of extension beams 512 located on different sides of the central beam 511 can be one or more, and the widths of different extension beams 512 can also be the same or different. In the present embodiment, the fast-turn axis beam 50 is formed as a whole into a serpentine shape in which the width of the central beam 511 located on the rotation axis is relatively large and the width of the extended beam 512 symmetrically distributed relative to the central beam 511 is relatively small. The structure of multiple straight line segments of unequal widths in the fast-turn axis beam 50 can improve the reliability of the fast-turn axis beam 50 in supporting the torsion of the reflector 30 along its axial direction.

[0037] There are two fast-rotating axis beams 50, which are symmetrically arranged on the other two opposite sides of the fixed structure 12 and respectively connected between the movable frame 11 and the reflector 30. The axes of the two fast-rotating axis beams 50 are located on the same straight line. The second sensor element 22 can be arranged corresponding to only one of the fast-rotating axis beams 50 to detect the real-time torsion angle of the fast-rotating axis beam 50. In this embodiment, the second sensor element 22 is arranged on the end of the central beam 511 of the fast-rotating axis beam 50 away from the reflector 30.

[0038] Optionally, the first sensing element 21 and the second sensing element 22 are both piezoresistive sensors. For the sake of ease of description, they are respectively referred to as the first piezoresistive sensor and the second piezoresistive sensor. The first piezoresistive sensor is located on the axis of the slow-rotating shaft beam 40, and is used to detect the stress change of the slow-rotating shaft beam 40 in torsion, output the corresponding amplitude, and detect the real-time deflection angle of the slow-rotating shaft beam 40; the second piezoresistive sensor is located on the axis of the fast-rotating shaft beam 50, and is used to detect the stress change of the fast-rotating shaft beam 50 in torsion, output the corresponding amplitude, and detect the real-time deflection angle of the fast-rotating shaft beam 50; in this way, the slow-axis deflection angle and the fast-axis deflection angle are respectively determined by the outputs of the first piezoresistive sensor and the second piezoresistive sensor, thereby realizing the motion control of the reflector 30 in two vertical directions.

[0039] See also Figure 3 In an optional example, the piezoresistive sensor is an N-type piezoresistive sensor prepared on a P-type substrate. Along the crystal direction

[100] , the expression of the relative change rate of resistance R under stress can be obtained:

[0040]

[0041] σ x : stress in x direction, σ y : y-direction stress, σ xy : In-plane shear stress, π 11 , π 12 Piezoresistive coefficient tensor component, when the angle between the piezoresistive sensor and the crystal direction

[100] is 45°, the "±" in the above formula 1 is positive, and the angle between the piezoresistive sensor and the crystal direction

[100] is 135°, and the "±" in the above formula 1 is negative. The output of the Wheatstone bridge is related to the axial stress and shear stress in the x and y directions. When the reflector 30 is twisted, shear stress is generated, and the greater the deflection angle, the greater the shear stress, and the greater the bridge output. The thermal stress caused by thermal expansion will generate axial force in the x and y directions, causing the output of the Wheatstone bridge to drift. The greater the temperature change, the greater the drift. In the embodiment of the present application, a stress isolation structure 60 is provided at the end of the slow-rotating shaft beam 40. The stress caused by the mismatch of the thermal expansion coefficients between the packaging material and the chip material when the galvanometer device is packaged is reduced by the stress isolation structure 60, so as to avoid affecting the performance of the piezoresistive sensor.

[0042] In some embodiments, see Figure 4The stress isolation groove includes a transverse integral groove 61 disposed on the outer side of the end of the slow-rotating shaft beam 40 away from the connection with the movable frame 11, that is, close to the connection between the slow-rotating shaft beam 40 and the fixed structure 12. The extension direction of the transverse integral groove 61 is the same as the width direction of the slow-rotating shaft beam 40, and the length of the transverse integral groove 61 is greater than or equal to the width of the slow-rotating shaft beam 40. Among them, the transverse integral groove 61 is as close to the end of the slow-rotating shaft beam 40 as possible. In this embodiment, the distance between the transverse integral groove 61 and the end of the slow-rotating shaft beam 40 is less than the width of the slow-rotating shaft beam 40, which can reduce the axial stress in the direction perpendicular to the transverse integral groove 61 caused by the mismatch of the thermal expansion coefficients of the packaging material and the chip material when the galvanometer device is packaged. For ease of description and understanding, Figure 4 Taking the shown orientation as an example, the length direction of the transverse integral groove 61 is the x-axis direction, and the direction perpendicular to the transverse integral groove 61 is the y-axis direction. The transverse integral groove 61 can isolate the transmission of stress in the y-axis direction, and the stress on the piezoresistive sensor in the y-axis direction is reduced, thereby reducing the influence of thermal stress on the output of the piezoresistive sensor, thereby reducing the change in the zero-position output of the piezoresistive sensor in the entire temperature range.

[0043] Optionally, the stress isolation groove further includes a vertical isolation groove provided at the connection between the slow-rotating shaft beam 40 and the fixed structure 12, or includes a combination of a vertical isolation groove and a transverse isolation groove provided at the connection between the slow-rotating shaft beam 40 and the fixed structure 12. In some embodiments, refer to Figure 5 The stress isolation groove includes a first direction isolation groove 62, which is used to reduce the axial stress in the second direction perpendicular to the first direction; the first direction isolation groove 62 includes two vertical grooves respectively arranged on opposite sides of the first sensor element 21, and the distance between the vertical grooves is greater than the width of the second connecting section 42 of the slow-rotating shaft beam 40. In this embodiment, the vertical groove is connected to the groove width corresponding to the outermost straight section of the main beam portion 43, and is as close to the first sensor element 21 as possible, which can reduce the axial stress in the direction perpendicular to the vertical groove caused by the mismatch of the thermal expansion coefficients of the packaging material and the chip material when the galvanometer device is packaged. For ease of description and understanding, Figure 5 Taking the shown orientation as an example, the length direction of the vertical groove is the y-axis direction, and the interval between the two vertical grooves is the x-axis direction. The vertical groove can isolate the transmission of stress in the x-axis direction, and the stress on the piezoresistive sensor in the x-axis direction is reduced, thereby reducing the influence of thermal stress on the output of the piezoresistive sensor, thereby reducing the change in the zero-position output of the piezoresistive sensor in the entire temperature range.

[0044] Optional, see Figure 6The stress isolation groove also includes a second direction isolation groove 63, which is used to reduce the axial stress in the first direction perpendicular to the second direction; the second direction isolation groove 63 includes a transverse groove located outside the end of the vertical groove away from the slow-rotating shaft beam 40 and away from the first connecting end 41, that is, close to the connection between the slow-rotating shaft beam 40 and the fixed structure 12, and the length of the transverse groove is greater than or equal to the distance between the vertical grooves. Figure 6 Taking the shown orientation as an example, the transverse groove is located at the end of the vertical groove away from the slow-rotating shaft beam 40, and the length direction of the transverse groove is the x-axis direction. The transverse groove and the vertical groove are arranged in a circumferential manner on the outside of the first sensor element 21. This can simultaneously reduce the axial stress in the x-axis direction and the y-axis direction caused by the mismatch in the thermal expansion coefficients of the packaging material and the chip material when the galvanometer device is packaged, reduce the influence of thermal stress on the output of the piezoresistive sensor, and reduce the change in the zero-position output of the piezoresistive sensor in the entire temperature range.

[0045] In general, the galvanometer device provided in the embodiments of the present application has at least the following characteristics:

[0046] First, adding a stress isolation structure 60 at the end of the slow-rotating shaft beam 40 can effectively reduce the axial stress generated in the piezoresistive area due to the mismatch of the thermal expansion coefficient and reduce the drift of the piezoresistive sensor.

[0047] Second, the fast-rotating shaft beam 50 adopts a symmetrical composite beam with different beam widths, which can effectively reduce the maximum stress of the torsion shaft, make the stress evenly distributed on the beam, and avoid stress concentration.

[0048] Third, the slow-rotating shaft beam 40 adopts a serpentine beam comprising multiple parallel straight segments, and the straight segment at the connection with the movable frame 11 is located at the axis of the torsion axis. This can not only reduce the stress on the beam, but also avoid the piezoresistive sensor from generating additional output due to the torsional movement of the movable frame 11 around the slow-rotating shaft beam 40.

[0049] Optionally, on the other hand, an embodiment of the present application provides a MEMS galvanometer integrated product, comprising the galvanometer device of any of the aforementioned embodiments, wherein the MEMS galvanometer integrated product is a product that includes a galvanometer device and is widely used in different fields such as optical communication, laser projection, three-dimensional imaging, and lidar, and may be one of the following: optical communication system, lidar system, laser projection system, three-dimensional imaging system.

[0050] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A galvanometer device, characterized in that: include: A frame, comprising a fixed structure and a movable frame connected to the fixed structure via a slow-rotating shaft beam; A reflector, connected to the movable frame via a fast-rotating shaft beam; A sensing assembly, comprising a first sensing element arranged corresponding to the slow-rotating shaft beam, and / or a second sensing element arranged corresponding to the fast-rotating shaft beam; The stress isolation structure comprises a stress isolation groove arranged on the outer side of the slow-rotating shaft beam, and is used to isolate the stress transmission in the direction perpendicular to the extension direction of the stress isolation groove.

2. The galvanometer device according to claim 1, characterized in that: The slow-rotating shaft beam includes a first connection end connected to a movable frame, a main beam portion extending inwardly from the first connection end to form a plurality of parallel straight line segments, and a second connection end connecting the main beam portion to a fixed structure.

3. The galvanometer device according to claim 2, characterized in that: In the slow-rotating shaft beam, the straight line segment aligned with the connection point of the fixed structure is located on the axis of the slow-rotating shaft beam.

4. The galvanometer device according to claim 3, characterized in that: The first connection end and the second connection end are respectively located on opposite sides of the axis of the slow-rotating shaft beam, and the first sensor element is arranged at the end of the second connection end and is located on the axis of the slow-rotating shaft beam.

5. The galvanometer device according to claim 4, characterized in that: The stress isolation groove comprises a first direction isolation groove, which is used to reduce the axial stress in a second direction perpendicular to the first direction; The first-direction isolation groove includes two vertical grooves respectively arranged on two opposite sides of the first sensing element, and the distance between the vertical grooves is greater than the width of the second connecting end.

6. The galvanometer device according to claim 5, characterized in that: The stress isolation groove further includes a second direction isolation groove for reducing the axial stress in a first direction perpendicular to the second direction; The second-direction isolation groove comprises a transverse groove located outside an end of the vertical groove away from the first connection end, and the length of the transverse groove is greater than or equal to the distance between the vertical grooves.

7. The galvanometer device according to claim 1, characterized in that: The stress isolation groove includes a transverse integral groove arranged on the outer side of one end of the slow-rotating shaft beam away from the connection with the movable frame, the extension direction of the transverse integral groove is the same as the width direction of the slow-rotating shaft beam, and the length of the transverse integral groove is greater than or equal to the width of the slow-rotating shaft beam.

8. The galvanometer device according to claim 1, characterized in that: The fast-rotating shaft beam includes a beam body and a transition connection end connected to the reflector; The beam body includes a central beam and extended beams that are bent and extended from the central beam to opposite sides, and the width of the transition connection end is equal to the width of the beam body.

9. The galvanometer device according to claim 8, characterized in that: The width of the central beam is greater than the width of the extended beam; and / or, The expansion beams are arranged symmetrically with respect to the central beam; and / or, The number of the extended beams located on different sides of the central beam is one or more, and the widths of different extended beams are the same or different.

10. A MEMS galvanometer integrated product, characterized in that: comprising a galvanometer device as claimed in any one of claims 1 to 9; The MEMS galvanometer integrated product is one of the following: an optical communication system, a laser radar system, a laser projection system, and a three-dimensional imaging system.

Images