A solid-state RF wideband amplifier capable of digital power information acquisition

By designing a solid-state RF bandwidth amplifier including a multi-stage amplifier unit, a voltage-regulating power supply unit, an output detection unit and a microcontroller display unit, the problem that the solid-state RF bandwidth amplifier cannot visually observe digital information and generate control signals is solved, and digital power information acquisition and control signal generation are realized.

CN222706476UActive Publication Date: 2025-04-01SHANGHAI PINYU ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202421385464.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-17
Publication Date
2025-04-01
Estimated Expiration
2034-06-17

AI Technical Summary

Technical Problem

The existing solid-state RF bandwidth amplifiers are inconvenient for visual observation of their digital information, resulting in the inability to generate the control signals required by the system.

Method used

A solid-state RF bandwidth amplifier including a first-stage, a second-stage and a third-stage amplification unit, a voltage-regulating power unit, an output detection unit and a microcontroller display unit are designed. Through these units, the input signal is subjected to radio frequency amplification and power amplification, and the voltage and current information are sampled, converted into a fully digital signal, processed and displayed to generate a control signal.

Benefits of technology

The digital power information acquisition and control signal generation of solid-state radio frequency bandwidth amplifiers is realized, and the problem that the control signal cannot be visually observed and generated in the prior art is solved.

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Abstract

The utility model provides a solid-state RF bandwidth amplifier capable of digital power information acquisition, comprising: a first-stage amplification unit, a second-stage amplification unit, a third-stage amplification unit, a voltage-stabilized power supply unit, the voltage-stabilized power supply unit having an AC / DC module and a DC / DC module electrically connected in sequence to supply power to the first-stage amplification unit, the second-stage amplification unit, and the third-stage amplification unit, a first output detection unit, the input end of the first output detection unit is communicatively connected to the first-stage amplification unit for current and voltage information sampling; a second output detection unit, the input end of the second output detection unit is communicatively connected to the third-stage amplification unit for current and voltage information sampling; and a single-chip display unit, which processes and displays the sampling information of the output end of the first output detection unit and the second output detection unit. The present application can obtain digital power information, generate the control signal required by the system, and complete the function of the entire system.
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Description

Technical Field

[0001] The utility model relates to the technical field of bandwidth amplifier devices, in particular to a solid-state radio frequency bandwidth amplifier capable of collecting digital power information. Background Art

[0002] With the requirement of fast frequency switching in modern shortwave broadcast transmitters, wideband amplifiers are generally used at the front end of the RF system of large and medium-sized shortwave broadcast transmitters. Such wideband amplifiers are power amplifiers. Since they have no tuning components, the operation is simplified, creating conditions for fast frequency switching. However, the existing solid-state RF broadband amplifiers are not convenient for visually observing the digital information of the solid-state RF broadband amplifiers, and thus are not convenient for generating the control signals required by the system.

[0003] Therefore, there is an urgent need to propose a solid-state RF bandwidth amplifier that can collect digital power information, so as to solve the technical problem that the current solid-state RF bandwidth amplifier is not convenient for visually observing the digital information of the solid-state RF bandwidth amplifier, and thus is not convenient for generating the control signal required by the system. Utility Model Content

[0004] Aiming at the technical problem that the solid-state radio frequency bandwidth amplifier in the prior art is not convenient for visually observing the digital information of the solid-state radio frequency bandwidth amplifier, and thus is not convenient for generating the control signal required by the system, the utility model proposes a solid-state radio frequency bandwidth amplifier capable of digitally collecting power information.

[0005] In a preferred embodiment of the present utility model, a solid-state radio frequency bandwidth amplifier capable of digitally collecting power information is provided, and the solid-state radio frequency bandwidth amplifier comprises:

[0006] A first-stage amplifying unit, wherein an input terminal of the first-stage amplifying unit inputs a carrier signal processed by a preprocessing unit and generated by a frequency synthesizer;

[0007] A second-stage amplifying unit, wherein an input end of the second-stage amplifying unit is communicatively connected to an output end of the first-stage amplifying unit;

[0008] A third-stage amplifying unit, wherein the input end of the third-stage amplifying unit is communicatively connected to the output end of the second-stage amplifying unit, and the output end of the third-stage amplifying unit outputs a signal processed by the solid-state RF bandwidth amplifier;

[0009] A voltage-stabilized power supply unit, the voltage-stabilized power supply unit having an AC / DC module and a DC / DC module electrically connected in sequence, the input end of the AC / DC module inputting 220V alternating current, the input end of the DC / DC module connected to the output end of the AC / DC module, the output end of the AC / DC module outputting 28V direct current, the output end of the DC / DC module being electrically connected to the first-stage amplification unit, the second-stage amplification unit, and the third-stage amplification unit, respectively, to supply power to the first-stage amplification unit, the second-stage amplification unit, and the third-stage amplification unit;

[0010] A first output detection unit, wherein an input end of the first output detection unit is communicatively connected to the first-stage amplification unit to perform current and voltage information sampling;

[0011] A second output detection unit, wherein the input end of the second output detection unit is communicatively connected to the third-stage amplification unit to perform current and voltage information sampling;

[0012] The single-chip display unit is respectively connected to the output end of the first output detection unit and the output end of the second output detection unit for communication, so as to process and display the sampling information of the output end of the first output detection unit and the output end of the second output detection unit.

[0013] Preferably, the preprocessing is to increase the carrier signal generated by the frequency synthesizer through an automatic gain controller.

[0014] Preferably, the first-stage amplifying unit is composed of a 2N3866 transistor, a BLW84 transistor and an MRF141G dual MOS field effect amplifier tube connected in sequence.

[0015] Preferably, the second-stage amplifying unit is two MRF433 transistors.

[0016] Preferably, the third-stage amplification unit is two PT9780 transistors.

[0017] Preferably, the output end of the third-stage amplification unit outputs a signal gain of 35 dB after being processed by the solid-state RF bandwidth amplifier, and the output power is 200 W.

[0018] Preferably, the first output detection unit and the second output detection unit respectively include a sampling data A / D conversion module, a digital multiplication module and a digital filtering module.

[0019] Preferably, the single-chip microcomputer model of the single-chip microcomputer display unit is STC12C5A32S2, which includes a central processing unit module and a memory module.

[0020] Preferably, the solid-state radio frequency bandwidth amplifier capable of digitally acquiring power information further comprises a cooling unit, and the cooling unit comprises a fan and an aluminum heat sink.

[0021] Preferably, the number of fans is no less than 2.

[0022] Compared with the prior art, the utility model can achieve the following beneficial effects:

[0023] The solid-state RF bandwidth amplifier capable of digitizing power information acquisition of the present application can perform RF amplification, RF driving power amplification, and push-pull gain on the input signal through the first-stage amplification unit, the second-stage amplification unit, and the third-stage amplification unit, and can control the output power to be 200 W. In addition, the voltage is directly sampled by the first output detection unit and the second output detection unit, and the sampling current is directly transmitted to the STC12C5A32S2 single-chip microcomputer for A / D conversion into a full digital signal, and then the STC12C5A32S2 single-chip microcomputer is programmed to realize digital multiplication and filtering, thereby obtaining digitized power information, and generating the control signal required by the system, completing the function of the entire system. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The preferred implementation scheme will be described below in a clear and understandable manner with reference to the accompanying drawings to further illustrate the above-mentioned characteristics, technical features, advantages and their implementation methods.

[0025] Figure 1 A solid-state radio frequency bandwidth amplifier capable of digitally acquiring power information in one embodiment of the utility model is shown. DETAILED DESCRIPTION

[0026] The various aspects of the utility model are further described in detail below.

[0027] Unless otherwise defined or indicated, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein can be applied to the present invention.

[0028] Unless otherwise clearly specified and limited, the "or" mentioned in the present invention includes the relationship of "and". The "and" is equivalent to the Boolean logic operator "AND", the "or" is equivalent to the Boolean logic operator "OR", and "AND" is a subset of "OR".

[0029] It is to be understood that although the terms "first", "second", etc. may be used herein to describe different elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, the first element may be referred to as the second element without departing from the teachings of the present invention.

[0030] In the present invention, the terms “mainly composed of” and “consisting of” are included in the terms “containing”, “including” or “comprising”.

[0031] Unless otherwise clearly specified and limited, the terms "connected", "connected" and "connection" in the present invention should be understood in a broad sense, for example, it can be a fixed connection, or it can be connected through an intermediary medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0032] For example, if an element (or component) is referred to as being on, coupled to, or connected to another element, the element may be directly formed on, coupled to, or connected to the other element, or there may be one or more intervening elements between them. In contrast, if the expressions "directly on," "directly coupled to," and "directly connected to" are used herein, then no intervening elements are indicated. Other words used to describe the relationship between elements should be similarly interpreted, such as "between" and "directly between," "attached" and "directly attached," "adjacent" and "directly adjacent," and the like.

[0033] It should also be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The words "inner" and "outer" used refer to directions toward or away from the geometric center of a particular component, respectively. It can be understood that these terms are used here to describe the relationship of one element, layer or region relative to another element, layer or region as shown in the drawings. In addition to the orientations described in the drawings, these terms should also include other orientations of the device.

[0034] Other aspects of the present invention will be apparent to those skilled in the art from the disclosure herein.

[0035] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the specific implementation methods of the utility model will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings and other implementation methods can be obtained based on these drawings without creative work.

[0036] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application. The drawings only show the components related to the present application and are not drawn according to the number, shape and size of the components in actual implementation. The type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated. For example, the thickness of the components in the drawings may be exaggerated for the sake of clarity.

[0037] Example 1

[0038] As attached Figure 1 As shown, the utility model realizes a solid-state radio frequency bandwidth amplifier capable of digital power information acquisition, and the solid-state radio frequency bandwidth amplifier comprises:

[0039] A first-stage amplifying unit 3, wherein an input end of the first-stage amplifying unit 3 inputs a carrier signal processed by a preprocessing unit and generated by a frequency synthesizer;

[0040] A second-stage amplifying unit 4, wherein an input end of the second-stage amplifying unit 4 is communicatively connected to an output end of the first-stage amplifying unit 3;

[0041] A third-stage amplifying unit 5, wherein the input end of the third-stage amplifying unit 5 is communicatively connected to the output end of the second-stage amplifying unit 4, and the output end of the third-stage amplifying unit 5 outputs a signal processed by the solid-state RF bandwidth amplifier;

[0042] A voltage-stabilized power supply unit, the voltage-stabilized power supply unit having an AC / DC module 1 and a DC / DC module 2 electrically connected in sequence, the input end of the AC / DC module 1 inputting 220V alternating current, the input end of the DC / DC module 2 connected to the output end of the AC / DC module 1, the output end of the AC / DC module 1 outputting 28V direct current, the output end of the DC / DC module 2 electrically connected to the first-stage amplification unit 3, the second-stage amplification unit 4, and the third-stage amplification unit 5, respectively, to supply power to the first-stage amplification unit 3, the second-stage amplification unit 4, and the third-stage amplification unit 5;

[0043] A first output detection unit 6, wherein the input end of the first output detection unit 6 is communicatively connected to the first-stage amplification unit 3 to perform current and voltage information sampling;

[0044] A second output detection unit 8, wherein the input end of the second output detection unit 8 is communicatively connected to the third-stage amplification unit 5 to perform current and voltage information sampling;

[0045] The single-chip display unit 7 is communicatively connected to the output end 6 of the first output detection unit and the output end of the second output detection unit 8, respectively, so as to process and display the sampling information of the output end 6 of the first output detection unit and the output end of the second output detection unit 8.

[0046] As a preferred implementation, the preprocessing is to gain the carrier signal generated by the frequency synthesizer through an automatic gain controller.

[0047] As a preferred embodiment, the first-stage amplifier unit 3 is composed of a 2N3866 transistor, a BLW84 transistor, and a dual MOS field-resistance power amplifier tube of MRF141G connected in sequence. The BLW84 transistor is a single-tube common-emitter class A power amplifier, which is characterized by a sufficiently high cut-off frequency, a sufficiently large power, good linearity, suitable input and output impedance characteristics, strong load adaptability, and good heat dissipation performance. The dual MOS field-resistance power amplifier tube is a class A and B tube push-to-disconnect amplifier circuit, and its maximum output power is 300W. The present disclosure is set to 200W. This setting makes the residual margin larger, so it is arranged to avoid damaging the above components when the standing wave is relatively large.

[0048] It should be noted that the 2N3866 transistor uses a medium-power single-tube common-emitter Class A high-frequency power amplifier circuit with an operating current of approximately 30mA. It has the characteristics of high cut-off frequency and large gain.

[0049] As a preferred implementation, the second-stage amplifying unit 4 is two MRF433 transistors.

[0050] As a preferred implementation, the third-stage amplification unit 5 is two PT9780 transistors.

[0051] As a preferred implementation, the output end of the third-stage amplification unit 5 outputs a signal with a gain of 35 dB and an output power of 200 W after being processed by the solid-state RF bandwidth amplifier.

[0052] As a preferred implementation, the first output detection unit 6 and the second output detection unit 8 each include a sampling data AC / DC conversion module, a digital multiplication module and a digital filtering module.

[0053] As a preferred implementation, the single-chip display unit 7 has a single-chip microcomputer model of STC12C5A32S2, which includes a central processing unit module and a memory module.

[0054] As a preferred embodiment, the solid-state radio frequency bandwidth amplifier capable of digitally acquiring power information further comprises a cooling unit, and the cooling unit comprises a fan and an aluminum heat sink.

[0055] As a preferred implementation, the number of fans is no less than 2.

[0056] The solid-state RF bandwidth amplifier capable of digitizing power information acquisition of the present application can perform RF amplification, RF driving power amplification, and push-pull gain on the input signal through the first stage amplification unit, the second stage amplification unit, and the third stage amplification unit, and can control the output power to be 200 W. In addition, the voltage is directly sampled by the first output detection unit and the second output detection unit, and the sampling current is directly transmitted to the STC12C5A32S2 single-chip microcomputer for AC / DC conversion to a full digital signal, and then the STC12C5A32S2 single-chip microcomputer is programmed to realize digital multiplication and filtering, thereby obtaining digitized power information, and generating the control signal required by the system, completing the function of the entire system.

[0057] Based on this application, it should be understood by those skilled in the art that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number and aspect described herein can be used to implement the device and / or practice the method. In addition, other structures and / or functionalities other than one or more of the aspects described herein can be used to implement this device and / or practice this method.

[0058] It should be noted that the above embodiments can be freely combined as needed. The above is only a preferred implementation of the utility model. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the utility model, and these improvements and modifications should also be regarded as the protection scope of the utility model.

[0059] All documents mentioned in this utility model are cited as references in this application, just as each document is cited as reference separately. In addition, it should be understood that after reading the above content of this utility model, those skilled in the art can make various changes or modifications to this utility model, and these equivalent forms also fall within the scope defined by the claims attached to this application.

Claims

1. A solid-state RF bandwidth amplifier capable of digital power information acquisition, characterized in that: The solid-state radio frequency bandwidth amplifier capable of digital power information acquisition comprises: A first-stage amplifying unit, wherein an input terminal of the first-stage amplifying unit inputs a carrier signal processed by a preprocessing unit and generated by a frequency synthesizer; A second-stage amplifying unit, wherein an input end of the second-stage amplifying unit is communicatively connected to an output end of the first-stage amplifying unit; A third-stage amplifying unit, wherein the input end of the third-stage amplifying unit is communicatively connected to the output end of the second-stage amplifying unit, and the output end of the third-stage amplifying unit outputs a signal processed by the solid-state RF bandwidth amplifier; A voltage-stabilized power supply unit, the voltage-stabilized power supply unit having an AC / DC module and a DC / DC module electrically connected in sequence, the input end of the AC / DC module inputting 220V alternating current, the input end of the DC / DC module connected to the output end of the AC / DC module, the output end of the AC / DC module outputting 28V direct current, the output end of the DC / DC module being electrically connected to the first-stage amplification unit, the second-stage amplification unit, and the third-stage amplification unit, respectively, to supply power to the first-stage amplification unit, the second-stage amplification unit, and the third-stage amplification unit; A first output detection unit, wherein an input end of the first output detection unit is communicatively connected to the first-stage amplification unit to perform current and voltage information sampling; A second output detection unit, wherein the input end of the second output detection unit is communicatively connected to the third-stage amplification unit to perform current and voltage information sampling; The single-chip display unit is respectively connected to the output end of the first output detection unit and the output end of the second output detection unit for communication, so as to process and display the sampling information of the output end of the first output detection unit and the output end of the second output detection unit.

2. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 1, characterized in that: The preprocessing is to gain the carrier signal generated by the frequency synthesizer through an automatic gain controller.

3. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 2, characterized in that: The first-stage amplification unit is composed of a 2N3866 transistor, a BLW84 transistor and an MRF141G dual MOS field effect power amplifier tube connected in sequence.

4. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 3, characterized in that: The second stage amplification unit is two MRF433 transistors.

5. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 4, characterized in that: The third-stage amplification unit is two PT9780 transistors.

6. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 5, characterized in that: The output end of the third-stage amplification unit outputs a signal with a gain of 35 dB and an output power of 200 W after being processed by the solid-state RF bandwidth amplifier.

7. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 6, characterized in that: The first output detection unit and the second output detection unit respectively include a sampling data A / D conversion module, a digital multiplication module and a digital filtering module.

8. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 7, characterized in that: The single-chip display unit has a single-chip microcomputer model of STC12C5A32S2, which includes a central processing unit module and a memory module.

9. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 8, characterized in that: The solid-state radio frequency bandwidth amplifier capable of digitally collecting power information further comprises a cooling unit, which comprises a fan and an aluminum heat sink.

10. A solid-state RF bandwidth amplifier capable of digital power information acquisition as claimed in claim 9, characterized in that: The number of fans is no less than 2.