Power module based on metal-oxide-semiconductor field effect transistor

Abstract

The utility model discloses a power module based on a metal-oxide-semiconductor field effect transistor, which is applied to the field of semiconductor devices, an insulating heat conduction structure comprises an insulating heat conduction sheet and heat conduction glue arranged on the surfaces of the two sides of the insulating heat conduction sheet, and the thermal resistance of the insulating heat conduction structure is smaller than that of a printed circuit board. The heat-conducting glue located on one side of the insulating heat-conducting fin is attached to the heat dissipation structure, the heat-conducting glue located on the other side of the insulating heat-conducting fin is attached to the top of the metal-oxide-semiconductor field effect transistor, and the metal-oxide-semiconductor field effect transistor is connected with the printed circuit board through a pin. According to the technical scheme of the utility model, the metal-oxide-semiconductor field-effect transistor with the top heat dissipation packaging function is adopted, and the heat-conducting glue, the insulating heat-conducting sheet, the heat-conducting glue and the heat dissipation structure are sequentially attached to the top heat dissipation area of the metal-oxide-semiconductor field-effect transistor in the direction opposite to the metal-oxide-semiconductor field-effect transistor. Heat generated by the metal-oxide-semiconductor field effect transistor is conducted to the heat dissipation structure for heat dissipation, the thermal resistance of a heat conduction path of the metal-oxide-semiconductor field effect transistor is reduced, and meanwhile the insulativity of the heat conduction structure is guaranteed.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor devices, in particular to a power module based on a metal oxide semiconductor field effect transistor. Background Art

[0002] The metal oxide semiconductor field effect transistor in the power module will generate high heat when working. In order to ensure the stable operation of the device, it is necessary to dissipate the heat generated by the metal oxide semiconductor field effect transistor in time to avoid the metal oxide semiconductor field effect transistor core temperature being too high and causing damage to the electronic components. The metal oxide semiconductor field effect transistor is currently bonded to the printed circuit board and connected to the heat dissipation structure through the printed circuit board, but this method has a larger heat transfer path and is not conducive to heat dissipation.

[0003] Therefore, how to provide a power module with a short heat transfer path and high heat dissipation efficiency is a problem that needs to be solved urgently by those skilled in the art. Utility Model Content

[0004] In view of the above, the purpose of the utility model is to provide a power module based on metal oxide semiconductor field effect transistors to solve the problem that the power module based on metal oxide semiconductor field effect transistors in the prior art needs to transfer the heat generated by the metal oxide semiconductor field effect transistors to the heat dissipation structure through a printed circuit board, and the thermal resistance in the heat transfer path is large and the heat dissipation efficiency is low.

[0005] In order to solve the above technical problems, the utility model provides a power module based on metal oxide semi-conductor field effect transistor, comprising:

[0006] A top heat dissipation packaged MOSFET, a printed circuit board, a heat dissipation structure and an insulating thermal conductive structure;

[0007] The insulating heat-conducting structure comprises an insulating heat-conducting sheet and heat-conducting glue arranged on both sides of the insulating heat-conducting sheet; the thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board;

[0008] The thermally conductive adhesive on one side of the insulating thermally conductive sheet is bonded to the heat dissipation structure, and the thermally conductive adhesive on the other side of the insulating thermally conductive sheet is bonded to the top of the metal oxide semi-conductive transistor;

[0009] The metal oxide semi-field effect transistor is connected to the printed circuit board through pins.

[0010] Optionally, the insulating heat-conducting sheet is a ceramic sheet.

[0011] Optionally, the thermally conductive adhesives are all curing thermally conductive adhesives.

[0012] Optionally, the thermally conductive adhesives are all thermally conductive silicone rubber.

[0013] Optionally, the thickness of the thermally conductive silica gel is 0.1 mm-0.15 mm.

[0014] Optionally, the heat dissipation structure is a water-cooled heat dissipation structure;

[0015] The water-cooling heat dissipation structure includes a water-cooling plate adhered to the heat-conducting adhesive, and a cooling water channel formed on a side of the water-cooling plate facing away from the heat-conducting adhesive.

[0016] Optionally, a groove for accommodating overflow of the thermally conductive adhesive is provided on a surface of the water cooling plate on one side close to the thermally conductive adhesive.

[0017] Optionally, the groove is an annular groove;

[0018] The water cooling plate comprises a heat conduction area surrounded by the inner side of the annular groove and an edge area located outside the annular groove, and a surface of the water cooling plate in the heat conduction area is higher than a surface of the water cooling plate in the edge area.

[0019] Optionally, the water-cooling plate is an aluminum alloy water-cooling plate.

[0020] It can be seen that the power module based on metal oxide semi-conductor field effect transistor provided by the utility model includes a metal oxide semi-conductor field effect transistor with top heat dissipation package, a printed circuit board, a heat dissipation structure and an insulating heat-conducting structure. The insulating heat-conducting structure includes an insulating heat-conducting sheet and a thermally conductive adhesive arranged on both sides of the insulating heat-conducting sheet. The thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board. The thermally conductive adhesive located on one side of the insulating heat-conducting sheet is bonded to the heat dissipation structure, and the thermally conductive adhesive located on the other side of the insulating heat-conducting sheet is bonded to the top of the metal oxide semi-conductor field effect transistor. The metal oxide semi-conductor field effect transistor is connected to the printed circuit board through pins. The embodiment of the utility model adopts a metal oxide semi-conductor field effect transistor with a top heat dissipation package, adheres the top heat dissipation area of ​​the metal oxide semi-conductor field effect transistor to a thermally conductive adhesive, and sequentially adheres an insulating thermally conductive sheet, a thermally conductive adhesive and a heat dissipation structure, so that the heat generated by the metal oxide semi-conductor field effect transistor is conducted to the heat dissipation structure for heat dissipation by utilizing the structure formed by adhering the thermally conductive adhesive, the insulating thermally conductive sheet and the thermally conductive adhesive, thereby reducing the thermal resistance of the heat conduction path of the metal oxide semi-conductor field effect transistor, and at the same time utilizing the insulating thermally conductive sheet to ensure the insulation of the thermally conductive structure, thereby preventing the metal oxide semi-conductor field effect transistor from being damaged or failed. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0022] Figure 1A schematic diagram of the structure of a power module based on a metal oxide semi-conductor field effect transistor provided in an embodiment of the utility model;

[0023] Figure 2 A schematic diagram of the structure of another power module based on a metal oxide semiconductor field effect transistor provided in an embodiment of the utility model;

[0024] Figure 3 A schematic diagram of the structural position relationship in a power module based on a metal oxide semiconductor field effect transistor provided by an embodiment of the utility model;

[0025] Figure 4 A schematic diagram of a power module based on a metal oxide semiconductor field effect transistor provided in an embodiment of the utility model after assembly is completed;

[0026] Figures 1 to 4 In the figure, the reference numerals are described as follows:

[0027] 1-a circuit board with a top-heat-dissipating packaged metal oxide semi-conductor field effect transistor, 10-a top-heat-dissipating packaged metal oxide semi-conductor field effect transistor, 20-a printed circuit board;

[0028] 30-heat dissipation structure, 31-water cooling plate, 311-groove, 32-cooling water channel;

[0029] 41-insulating thermal conductive sheet, 411-ceramic sheet, 42-thermal conductive glue, 421-curing thermal conductive silicone. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0031] The metal oxide semiconductor field effect transistor in the power module will generate high heat when working. In order to ensure the stable operation of the device, it is necessary to dissipate the heat generated by the metal oxide semiconductor field effect transistor in time to avoid the metal oxide semiconductor field effect transistor core temperature being too high and causing damage to the electronic components. Existing heat dissipation methods for metal oxide semiconductor field effect transistors include:

[0032] (1) The metal oxide semiconductor field effect transistor is directly attached to the surface of the PCB (printed circuit board). The printed circuit board is made of FR4 (a composite material of glass fiber and epoxy resin). Several copper holes are opened in the PCB corresponding to the heat dissipation area of ​​the metal oxide semiconductor field effect transistor. The heat generated by the metal oxide semiconductor field effect transistor is transferred to the heat dissipation structure through the opened through holes and the PCB substrate. However, the thermal resistance of the heat transfer path of this heat dissipation method is too large, resulting in poor heat dissipation efficiency.

[0033] (2) A phase-change thermally conductive insulating material is provided between the metal oxide semiconductor field effect transistor and the heat dissipation structure so as to directly transfer the heat generated by the metal oxide semiconductor field effect transistor to the heat dissipation structure through the phase-change thermally conductive insulating material. However, this heat dissipation method is limited by the difficulty of processing the phase change material, which leads to high difficulty in preparation, and the phase change material is easily scratched, causing insulation failure. At the same time, it is limited by the supercooling phenomenon and phase separation phenomenon of the phase change material, resulting in an unstable heat dissipation process.

[0034] (3) Soldering the MOSFET to the aluminum substrate, and transferring the heat generated by the MOSFET to the heat dissipation structure through the aluminum substrate. However, this heat dissipation method is limited by the fact that the aluminum substrate can only be connected on one side, resulting in the structure occupying a large space.

[0035] In summary, the heat dissipation process based on metal oxide semiconductor field effect transistor in the prior art has the above-mentioned disadvantages, which reduces the heat dissipation efficiency of the structure.

[0036] The power module based on the MOSFET provided by the utility model is applied, and the top heat dissipation area of ​​the MOSFET is bonded with the thermal conductive adhesive by adopting the MOSFET with top heat dissipation package, and the insulating thermal conductive sheet, the thermal conductive adhesive and the heat dissipation structure are bonded in sequence, so that the heat generated by the MOSFET is transferred to the heat dissipation structure for heat dissipation by utilizing the structure formed by bonding the thermal conductive adhesive, the insulating thermal conductive sheet and the thermal conductive adhesive, thereby reducing the thermal resistance of the heat conduction path of the MOSFET, and at the same time utilizing the insulating thermal conductive sheet to ensure the insulation of the heat conduction structure, thereby preventing the MOSFET from being damaged and failing. Please refer to the following embodiments for details.

[0037] Embodiment 1:

[0038] Please refer to Figure 1 , Figure 1 A schematic diagram of the structure of a power module based on a metal oxide semi-conductor field effect transistor provided in an embodiment of the utility model. The power module may include:

[0039] A top heat dissipation packaged MOSFET 10, a printed circuit board 20, a heat dissipation structure 30 and an insulating heat conducting structure;

[0040] The insulating heat-conducting structure includes an insulating heat-conducting sheet 41 and heat-conducting glue 42 disposed on both sides of the insulating heat-conducting sheet 41; the thermal resistance of the insulating heat-conducting structure is less than the thermal resistance of the printed circuit board 20;

[0041] The thermally conductive adhesive 42 on one side of the insulating thermally conductive sheet 41 is bonded to the heat dissipation structure 30 , and the thermally conductive adhesive 42 on the other side of the insulating thermally conductive sheet 41 is bonded to the top of the MOSFET;

[0042] The MOSFET is connected to the printed circuit board 20 via pins.

[0043] In this embodiment, the metal oxide semiconductor field effect transistor is a MOS tube (MOS tube is a metal oxide semiconductor field effect transistor). In this embodiment, the metal oxide semiconductor field effect transistor is set as a top heat dissipation package. Compared with the conventional metal oxide semiconductor field effect transistor in which the drain pad in the lead frame is directly welded to the copper clad area and connected to the printed circuit board 20, the drain pad in the metal oxide semiconductor field effect transistor of the top heat dissipation package is exposed at the top, that is, the side of the metal oxide semiconductor field effect transistor facing away from the printed circuit board 20. At this time, the top of the metal oxide semiconductor field effect transistor can be directly connected to the heat dissipation structure 30 through a heat conductive medium, which can reduce the thermal resistance in the heat transfer path. In this embodiment, the bottom of the metal oxide semiconductor field effect transistor is connected to the printed circuit board 20 through a pin. The top and bottom of the metal oxide semiconductor field effect transistor in this embodiment are relative to the conventional metal oxide semiconductor field effect transistor, and do not refer to the upper and lower positions in the actual space.

[0044] In this embodiment, an insulating heat-conducting structure is used to transfer the heat generated by the metal oxide semiconductor field effect transistor to the heat dissipation structure 30. The insulating heat-conducting structure is configured as a heat-conducting adhesive 42, an insulating heat-conducting sheet 41 and a heat-conducting adhesive 42 which are sequentially attached along the heat transfer path. By arranging the insulating heat-conducting sheet 41 on the heat transfer path between the metal oxide semiconductor field effect transistor and the heat dissipation structure 30, the heat conduction efficiency can be improved while ensuring the insulation of the heat transfer path, so that the metal oxide semiconductor field effect transistor is insulated and connected to the external heat dissipation structure 30. At the same time, heat-conducting adhesive 42 is arranged on both sides of the insulating heat-conducting sheet 41 along the heat transfer path, so that the insulating heat-conducting structure can be closely attached to the metal oxide semiconductor field effect transistor and the heat dissipation structure 30, respectively, so as to avoid the presence of gaps in the heat transfer path that causes air to fill in and reduce the heat dissipation efficiency.

[0045] It should be noted that, in this embodiment, the insulating thermal conductive sheet 41 needs to be made of a material with a thermal resistance less than that of the printed circuit board 20, but this embodiment does not limit the specific material of the insulating thermal conductive sheet 41, as long as the thermal resistance of the selected material is less than that of the printed circuit board 20. Correspondingly, this embodiment does not limit the specific material of the thermal conductive adhesive 42, as long as it has a good thermal conductivity and can ensure that it can be closely attached to the heat dissipation structure 30, the insulating thermal conductive sheet 41 and the metal oxide semiconductor field effect transistor. This embodiment also does not limit the specific type of the thermal conductive adhesive 42, which can be a curing thermal conductive adhesive 42 or a non-curing thermal conductive adhesive 42. Accordingly, the specific material of the printed circuit board 20 in this embodiment can be selected according to the specific material of the printed circuit board 20 in the prior art.

[0046] A power module based on a metal oxide semi-field effect transistor provided by an embodiment of the utility model includes a metal oxide semi-field effect transistor 10 with a top heat dissipation package, a printed circuit board 20, a heat dissipation structure 30 and an insulating heat-conducting structure. The insulating heat-conducting structure includes an insulating heat-conducting sheet 41 and a thermally conductive adhesive 42 arranged on both sides of the insulating heat-conducting sheet 41. The thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board 20. The thermally conductive adhesive 42 located on one side of the insulating heat-conducting sheet 41 is bonded to the heat dissipation structure 30, and the thermally conductive adhesive 42 located on the other side of the insulating heat-conducting sheet 41 is bonded to the top of the metal oxide semi-field effect transistor. The metal oxide semi-field effect transistor is connected to the printed circuit board 20 through pins. The embodiment of the utility model adopts a MOSFET 10 with a top heat dissipation package, adheres the top heat dissipation area of ​​the MOSFET to a thermally conductive adhesive 42, and sequentially adheres an insulating thermally conductive sheet 41, a thermally conductive adhesive 42 and a heat dissipation structure 30, so that the heat generated by the MOSFET is conducted to the heat dissipation structure 30 for heat dissipation by utilizing the structure formed by adhering the thermally conductive adhesive 42, the insulating thermally conductive sheet 41 and the thermally conductive adhesive 42, thereby reducing the thermal resistance of the heat conduction path of the MOSFET, and at the same time utilizing the insulating thermally conductive sheet 41 to ensure the insulation of the heat conduction structure, thereby preventing the MOSFET from being damaged or failing.

[0047] Embodiment 2:

[0048] The power module based on metal oxide semiconductor field effect transistor provided by the embodiment of the utility model may include:

[0049] A top heat dissipation packaged MOSFET, a printed circuit board, a heat dissipation structure and an insulating thermal conductive structure;

[0050] The insulating heat-conducting structure includes a ceramic sheet and heat-conducting glue arranged on both sides of the ceramic sheet; the thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board;

[0051] The thermal conductive adhesive on one side of the ceramic sheet is bonded to the heat dissipation structure, and the thermal conductive adhesive on the other side of the ceramic sheet is bonded to the top of the MOSFET;

[0052] The MOSFET is connected to the printed circuit board through pins.

[0053] It should be noted that, because the ceramic sheet has both good thermal conductivity and insulation effects, the insulating thermal conductive sheet is set as a ceramic sheet in this embodiment, which can reduce the thermal resistance of the heat dissipation path of the metal oxide semiconductor field effect transistor, while ensuring that the metal oxide semiconductor field effect transistor is insulated and connected to the heat dissipation structure. In this embodiment, the ceramic sheet can be set to an aluminum oxide material, or the ceramic sheet can also be set to an aluminum nitride material, or it can also be set to a ceramic sheet of other materials. Accordingly, this embodiment does not limit the specific thickness of the ceramic sheet. It should be noted that while ensuring the insulation effect, the smaller the thickness of the ceramic sheet, the more conducive it is to the heat dissipation of the metal oxide semiconductor field effect transistor, but in the case of comprehensive consideration of the processing difficulty and structural strength, it is necessary to ensure that the thickness of the ceramic sheet is not too low.

[0054] The power module based on the metal oxide semi-field effect transistor provided by the embodiment of the utility model comprises a metal oxide semi-field effect transistor with a top heat dissipation package, a printed circuit board, a heat dissipation structure and an insulating heat conductive structure, wherein the insulating heat conductive structure comprises a ceramic sheet and a heat conductive adhesive arranged on both sides of the ceramic sheet, the thermal resistance of the insulating heat conductive structure is less than the thermal resistance of the printed circuit board, the heat conductive adhesive located on one side of the ceramic sheet is bonded to the heat dissipation structure, the heat conductive adhesive located on the other side of the ceramic sheet is bonded to the top of the metal oxide semi-field effect transistor, and the metal oxide semi-field effect transistor is connected to the printed circuit board through pins. The embodiment of the utility model adopts a metal oxide semi-field effect transistor with a top heat dissipation package, bonds the top heat dissipation area of ​​the metal oxide semi-field effect transistor with the heat conductive adhesive, and sequentially bonds the ceramic sheet, the heat conductive adhesive and the heat dissipation structure, so that the heat generated by the metal oxide semi-field effect transistor is conducted to the heat dissipation structure for heat dissipation by using the structure formed by bonding the heat conductive adhesive, the ceramic sheet and the heat conductive adhesive, thereby reducing the thermal resistance of the heat conduction path of the metal oxide semi-field effect transistor, and in addition, the ceramic sheet is used to ensure good heat conduction efficiency while ensuring the insulation of the heat conductive structure, thereby avoiding damage and failure of the metal oxide semi-field effect transistor.

[0055] Embodiment 3:

[0056] The power module based on metal oxide semiconductor field effect transistor provided by the embodiment of the utility model may include:

[0057] A top heat dissipation packaged MOSFET, a printed circuit board, a heat dissipation structure and an insulating thermal conductive structure;

[0058] The insulating heat-conducting structure includes an insulating heat-conducting sheet and heat-conducting glue arranged on both sides of the insulating heat-conducting sheet; the thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board;

[0059] The thermally conductive adhesive on one side of the insulating thermally conductive sheet is bonded to the heat dissipation structure, and the thermally conductive adhesive on the other side of the insulating thermally conductive sheet is bonded to the top of the metal oxide semi-field effect transistor;

[0060] The MOSFET is connected to the printed circuit board through pins;

[0061] All thermal conductive adhesives are curing thermal conductive adhesives.

[0062] In this embodiment, the thermal conductive adhesive is set as a curing type thermal conductive adhesive. After the curing type thermal conductive adhesive is laid on the specified surface during preparation, the curing type thermal conductive adhesive is adhered by curing treatment. While improving the close contact effect with the contact surface, the bonding strength can be improved, thereby improving the stability of the structure on the heat dissipation path. In this embodiment, the specific curing method of the curing type thermal conductive adhesive is not limited. For example, a thermal curing treatment method can be selected, or an ultraviolet curing treatment method can be selected, or a chemical curing treatment method can be selected. The specific curing method is selected according to the matrix of the curing type thermal conductive adhesive. It should be noted that when preparing the thermal conductive adhesive in this embodiment, the first uncured thermal conductive adhesive can be first applied to the area corresponding to the insulating thermal conductive structure connected in the heat dissipation structure, and an insulating thermal conductive sheet can be laid on the surface of the initial thermal conductive adhesive, and then the second uncured thermal conductive adhesive can be applied to the surface of the insulating thermal conductive sheet facing away from the heat dissipation structure, and the second thermal conductive adhesive is bonded to the top heat dissipation area of ​​the metal oxide semiconductor field effect transistor. After bonding, the above-mentioned first thermal conductive adhesive and the second thermal conductive adhesive can be uniformly cured.

[0063] Furthermore, in order to ensure the heat conduction efficiency of the thermally conductive adhesive and to match the structure of the thermally conductive adhesive, the thermally conductive adhesive can be configured as thermally conductive silicone.

[0064] In this embodiment, the thermally conductive adhesive is set as thermally conductive silicone rubber, and the insulating thermally conductive sheet can be set as a ceramic sheet, which can ensure that the thermally conductive silicone rubber is compatible with other fitting structures and ensure the thermal conductivity efficiency of the heat dissipation path.

[0065] Furthermore, in order to reduce the thermal resistance of the heat dissipation path and improve the convenience of preparation, the thickness of the above-mentioned thermal conductive silicone can be set to 0.1 mm-0.15 mm.

[0066] It should be noted that in this embodiment, the thickness of the thermally conductive silicone is set to 0.1 mm to 0.15 mm. During preparation, the thickness of each layer of thermally conductive silicone needs to be compressed to balance the difficulty of preparing the thermally conductive silicone compression and the thermal resistance of the thermally conductive silicone along the heat conduction path, and the thickness of the thermally conductive silicone set on both sides of the insulating thermally conductive sheet is set to 0.1 mm to 0.15 mm. It should be further noted that in this embodiment, the thickness of the first thermally conductive silicone prepared on one side of the insulating thermally conductive sheet can be preferably compressed and controlled to 0.1 mm to 0.15 mm. When preparing the second thermally conductive silicone on the other side of the insulating thermally conductive sheet, the compression amount of the second thermally conductive silicone can be adjusted according to the thickness of the first thermally conductive silicone, so that the total thickness of the first thermally conductive silicone and the second thermally conductive silicone is maintained at 0.3 mm, so as to ensure the consistency of the total thermal resistance and reduce the stress on the contact surface with the PCB board.

[0067] A power module based on a metal oxide semi-conductor field effect transistor provided by an embodiment of the utility model includes a metal oxide semi-conductor field effect transistor with a top heat dissipation package, a printed circuit board, a heat dissipation structure and an insulating heat-conducting structure. The insulating heat-conducting structure includes an insulating heat-conducting sheet and a thermally conductive adhesive arranged on both sides of the insulating heat-conducting sheet. The thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board. The thermally conductive adhesive located on one side of the insulating heat-conducting sheet is bonded to the heat dissipation structure, and the thermally conductive adhesive located on the other side of the insulating heat-conducting sheet is bonded to the top of the metal oxide semi-conductor field effect transistor. The metal oxide semi-conductor field effect transistor is connected to the printed circuit board through pins, and the thermally conductive adhesive is a curing thermally conductive adhesive. The embodiment of the utility model adopts a MOSFET with a top heat dissipation package, fits the top heat dissipation area of ​​the MOSFET with a thermally conductive adhesive, and sequentially fits an insulating thermally conductive sheet, a thermally conductive adhesive, and a heat dissipation structure, so that the heat generated by the MOSFET is transferred to the heat dissipation structure for heat dissipation by using the structure formed by the thermally conductive adhesive, the insulating thermally conductive sheet, and the thermally conductive adhesive, thereby reducing the thermal resistance of the heat conduction path of the MOSFET. At the same time, the insulating thermally conductive sheet is used to ensure the insulation of the thermally conductive structure, thereby preventing the MOSFET from being damaged and failing. By setting the thermally conductive adhesive as a curing thermally conductive adhesive, the stability of the overall structure is ensured. In addition, by setting the thermally conductive adhesive as a thermally conductive silicone, the embodiment of the utility model can ensure that the thermally conductive silicone is compatible with the other fitted structures, while ensuring the thermal conductivity efficiency of the heat dissipation path; by setting the thickness of the thermally conductive silicone to 0.1 mm to 0.15 mm, the difficulty of preparing the thermally conductive silicone can be reduced while ensuring the thermal resistance of the heat dissipation path.

[0068] Embodiment 4:

[0069] Please refer to Figure 2 , Figure 2 A schematic diagram of the structure of another power module based on a metal oxide semiconductor field effect transistor provided in an embodiment of the utility model. The power module may include:

[0070] A top heat dissipation packaged MOSFET 10, a printed circuit board 20, a heat dissipation structure and an insulating heat conducting structure;

[0071] The insulating heat-conducting structure includes an insulating heat-conducting sheet 41 and heat-conducting glue 42 disposed on both sides of the insulating heat-conducting sheet 41; the thermal resistance of the insulating heat-conducting structure is less than the thermal resistance of the printed circuit board 20;

[0072] The thermally conductive adhesive 42 on one side of the insulating thermally conductive sheet 41 is bonded to the heat dissipation structure, and the thermally conductive adhesive 42 on the other side of the insulating thermally conductive sheet 41 is bonded to the top of the MOSFET;

[0073] The MOSFET is connected to the printed circuit board 20 via pins;

[0074] The heat dissipation structure is a water-cooled heat dissipation structure; the water-cooled heat dissipation structure includes a water-cooled plate 31 bonded to a heat-conducting adhesive 42 , and a cooling water channel 32 formed on a side of the water-cooled plate 31 facing away from the heat-conducting adhesive 42 .

[0075] In this embodiment, the heat dissipation structure is set as a water-cooled heat dissipation structure, which can further improve the heat dissipation efficiency of the metal oxide semiconductor field effect transistor.

[0076] Furthermore, in order to improve the preparation efficiency of the thermal conductive adhesive 42 and avoid increasing the stress between the contact surfaces when compressing the thickness of the thermal conductive adhesive 42, the surface of the water cooling plate 31 on one side close to the thermal conductive adhesive 42 can be provided with a groove 311 for accommodating the overflow of the thermal conductive adhesive 42.

[0077] In the present embodiment, when compressing the thickness of the thermally conductive adhesive 42 bonded to the water-cooling plate 31, the thickness of the thermally conductive adhesive 42 can be compressed to a limit thickness, so that when preparing the thermally conductive adhesive 42 on the other side of the insulating thermally conductive sheet 41, the compression amount can be appropriately reduced. At the same time, a groove 311 is provided on the surface of one side of the water-cooling plate 31 bonded to the thermally conductive adhesive 42, so that overflow of the thermally conductive adhesive 42 during compression can enter the groove 311, thereby reducing stress accumulation between contact surfaces and improving the stability of the structure.

[0078] Furthermore, in order to ensure that the water-cooling plate 31 is in close contact with the heat-conducting adhesive 42, the surface of the water-cooling plate 31 in contact with the heat-conducting adhesive 42 may be flattened. To further improve the processing efficiency, the groove 311 may be set as an annular groove.

[0079] The water cooling plate 31 includes a heat conduction area surrounded by the inner side of the annular groove and an edge area located outside the annular groove, and the surface of the water cooling plate 31 in the heat conduction area may be higher than the surface of the water cooling plate 31 in the edge area.

[0080] In this embodiment, by setting the surface of the water-cooling plate 31 in the above-mentioned heat-conducting area to be higher than the surface of the water-cooling plate 31 in the edge area, when the heat-conducting area in the water-cooling plate 31 is flattened, the edge area will not be affected, thereby ensuring the processing efficiency.

[0081] Furthermore, in order to ensure the heat dissipation efficiency of the water cooling plate 31, the water cooling plate 31 may be configured as an aluminum alloy water cooling plate.

[0082] In this embodiment, the water cooling plate 31 is set as an aluminum alloy water cooling plate 31, which improves the lightness of the structure while ensuring the heat dissipation efficiency of the water cooling plate 31. In this embodiment, the aluminum alloy water cooling plate 31 and the cooling water channel 32 can be prepared by die-casting aluminum alloy technology, or by CNC (computer numerical control) processing or 3D printing and other processes.

[0083] A power module based on a metal oxide semi-field effect transistor provided by an embodiment of the utility model comprises a metal oxide semi-field effect transistor 10 with a top heat dissipation package, a printed circuit board 20, a heat dissipation structure and an insulating heat-conducting structure, wherein the insulating heat-conducting structure comprises an insulating heat-conducting sheet 41 and a thermally conductive adhesive 42 arranged on both side surfaces of the insulating heat-conducting sheet 41, the thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board 20, the thermally conductive adhesive 42 located on one side of the insulating heat-conducting sheet 41 is bonded to the heat dissipation structure, the thermally conductive adhesive 42 located on the other side of the insulating heat-conducting sheet 41 is bonded to the top of the metal oxide semi-field effect transistor, the metal oxide semi-field effect transistor is connected to the printed circuit board 20 through pins, and the heat dissipation structure is a water-cooled heat dissipation structure, which comprises a water-cooled plate 31 bonded to the thermally conductive adhesive 42, and a cooling water channel 32 formed on the side of the water-cooled plate 31 facing away from the thermally conductive adhesive 42. The embodiment of the utility model adopts a metal oxide semiconductor field effect transistor 10 with a top heat dissipation package, adheres the top heat dissipation area of ​​the metal oxide semiconductor field effect transistor to the thermal conductive adhesive 42, and sequentially adheres an insulating thermal conductive sheet 41, a thermal conductive adhesive 42 and a heat dissipation structure, so that the heat generated by the metal oxide semiconductor field effect transistor is conducted to the heat dissipation structure for heat dissipation by utilizing the structure formed by adhering the thermal conductive adhesive 42, the insulating thermal conductive sheet 41 and the thermal conductive adhesive 42, thereby reducing the thermal resistance of the heat conduction path of the metal oxide semiconductor field effect transistor. At the same time, the insulating thermal conductive sheet 41 is utilized to ensure the insulation of the heat conduction structure, thereby preventing the metal oxide semiconductor field effect transistor from being damaged and failing. By configuring the heat dissipation structure as a water-cooled heat dissipation structure, the heat dissipation efficiency of the metal oxide semiconductor field effect transistor can be further improved. In addition, the embodiment of the utility model is capable of reducing the stress accumulation between the thermally conductive adhesive 42 and the contact surface and improving the stability of the structure by providing a groove for accommodating the overflow of the thermally conductive adhesive 42 on the surface of one side of the water-cooling plate 31 close to the thermally conductive adhesive 42; by setting the surface of the water-cooling plate 31 in the above-mentioned heat-conducting area to be higher than the surface of the water-cooling plate 31 in the edge area, when the heat-conducting area in the water-cooling plate 31 is flattened, it will not act on the edge area, thereby ensuring the processing efficiency; the water-cooling plate 31 is set to be an aluminum alloy water-cooling plate, so as to improve the lightweight degree of the structure while ensuring the heat dissipation efficiency of the water-cooling plate 31.

[0084] Specifically, the power module based on metal oxide semiconductor field effect transistor provided by the utility model can refer to Figure 3 , Figure 3 A schematic diagram of the structural position relationship in a power module based on a metal oxide semiconductor field effect transistor provided by an embodiment of the utility model. Specifically, it may include the following structures:

[0085] Top heat dissipation packaged MOSFET, printed circuit board, water-cooled heat dissipation structure and insulating heat-conducting structure;

[0086] The insulating heat-conducting structure includes a ceramic sheet 411 and a cured heat-conducting silica gel 421 disposed on both sides of the ceramic sheet 411; the thermal resistance of the insulating heat-conducting structure is less than the thermal resistance of the printed circuit board;

[0087] The cured thermally conductive silicone 421 on one side of the ceramic sheet 411 is bonded to the water cooling structure, and the cured thermally conductive silicone 421 on the other side of the ceramic sheet 411 is bonded to the top of the MOSFET; the thickness of the cured thermally conductive silicone 421 is 0.1 mm to 0.15 mm.

[0088] The MOSFET is connected to the printed circuit board through pins;

[0089] The water-cooling heat dissipation structure includes an aluminum alloy water-cooling plate bonded with the thermal conductive adhesive, and a cooling water channel 32 formed on the side of the aluminum alloy water-cooling plate facing away from the thermal conductive adhesive; a ring-shaped groove for accommodating the overflow of the cured thermal conductive silicone is provided on the surface of the aluminum alloy water-cooling plate facing the cured thermal conductive silicone 421;

[0090] The aluminum alloy water cooling plate comprises a heat conduction area surrounded by the inner side of the annular groove and an edge area located outside the annular groove, and the surface of the aluminum alloy water cooling plate in the heat conduction area is higher than the surface of the aluminum alloy water cooling plate in the edge area.

[0091] It should be noted that in this embodiment, the water cooling heat dissipation structure and the die-cast housing can be integrally formed, and the above structures are all arranged in the die-cast housing. The specific assembly steps may include:

[0092] Step S1: dispensing glue once in the heat conduction area of ​​the aluminum alloy water cooling plate in the die-cast housing;

[0093] Step S2: Pressing a ceramic sheet 411 in the primary glue dispensing area;

[0094] Step S3: performing secondary glue dispensing on the surface of the ceramic sheet 411 facing away from the aluminum alloy water cooling plate;

[0095] Step S4: placing a circuit board 1 with a top heat dissipation packaged MOSFET in the secondary glue dispensing area, wherein the top of the MOSFET is in contact with the secondary glue dispensing area.

[0096] The power module assembled in this embodiment can refer to Figure 4 , Figure 4 A schematic diagram of a power module based on a MOSFET provided by an embodiment of the utility model is shown in FIG. 1 , wherein the MOSFET is arranged downward. In this embodiment, the structure can be fixed in the die-cast housing by screws, and the specific arrangement position and number of the screws can be adjusted according to the position of the MOSFET.

[0097] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0098] It should also be noted that, in this article, relationships such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variants are intended to cover non-exclusive inclusions.

[0099] The power module based on metal oxide semi-conductor field effect transistor provided by the utility model is introduced in detail above. The principle and implementation mode of the utility model are explained in this article by using specific examples. The description of the above embodiments is only used to help understand the structure and core idea of ​​the utility model. At the same time, for the general technical personnel in this field, according to the idea of ​​the utility model, there will be changes in the specific implementation mode and the scope of application. In summary, the content of this specification should not be understood as a limitation on the utility model.

Claims

1. A power module based on metal oxide semi-conductor field effect transistor, characterized in that: include: A top heat dissipation packaged MOSFET, a printed circuit board, a heat dissipation structure and an insulating thermal conductive structure; The insulating heat-conducting structure comprises an insulating heat-conducting sheet and heat-conducting glue arranged on both sides of the insulating heat-conducting sheet; the thermal resistance of the insulating heat-conducting structure is smaller than the thermal resistance of the printed circuit board; The thermally conductive adhesive on one side of the insulating thermally conductive sheet is bonded to the heat dissipation structure, and the thermally conductive adhesive on the other side of the insulating thermally conductive sheet is bonded to the top of the metal oxide semi-conductive transistor; The metal oxide semi-field effect transistor is connected to the printed circuit board through pins.

2. The power module based on metal oxide semi-conductor field effect transistor according to claim 1, characterized in that: The insulating heat-conducting sheet is a ceramic sheet.

3. The power module based on metal oxide semi-conductor field effect transistor according to claim 1, characterized in that: The thermally conductive adhesives are all curing thermally conductive adhesives.

4. The power module based on metal oxide semi-conductor field effect transistor according to claim 1, characterized in that: The thermally conductive adhesives are all thermally conductive silicone rubber.

5. The power module based on metal oxide semi-conductor field effect transistor according to claim 4, characterized in that: The thickness of the thermally conductive silica gel is 0.1 mm to 0.15 mm.

6. The power module based on metal oxide semi-conductor field effect transistor according to claim 1, characterized in that: The heat dissipation structure is a water-cooling heat dissipation structure; The water-cooling heat dissipation structure includes a water-cooling plate adhered to the heat-conducting adhesive, and a cooling water channel formed on a side of the water-cooling plate facing away from the heat-conducting adhesive.

7. The power module based on metal oxide semi-conductor field effect transistor according to claim 6, characterized in that: A groove for accommodating overflow of the thermal conductive adhesive is arranged on a surface of the water cooling plate on one side close to the thermal conductive adhesive.

8. The power module based on metal oxide semi-conductor field effect transistor according to claim 7, characterized in that: The groove is an annular groove; The water cooling plate comprises a heat conduction area surrounded by the inner side of the annular groove and an edge area located outside the annular groove, and a surface of the water cooling plate in the heat conduction area is higher than a surface of the water cooling plate in the edge area.

9. The power module based on metal oxide semi-conductor field effect transistor according to claim 6, characterized in that: The water cooling plate is an aluminum alloy water cooling plate.

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