IGBT (Insulated Gate Bipolar Translator) power module and power equipment with same

Abstract

The utility model discloses an IGBT (Insulated Gate Bipolar Translator) power module and power equipment with the same. The IGBT power module comprises a chip; the lining plate is attached to the chip, and a high-temperature solder layer is arranged between the chip and the lining plate; the substrate is arranged on the side, away from the chip, of the lining plate, a low-temperature solder layer is arranged between the lining plate and the substrate, the melting point of the high-temperature solder layer is larger than that of the low-temperature solder layer, and the high-temperature solder layer and the low-temperature solder layer are made of lead-free solder. According to the IGBT power module provided by the utility model, the high-temperature solder layer and the low-temperature solder layer which are different in melting point and free of lead are adopted, so that when the substrate and the lining plate are welded, the welded high-temperature solder layer between the chip and the lining plate cannot be preheated and melted again, the quality and the yield of the IGBT power module are improved, and the production cost is reduced. And meanwhile, the low-temperature solder layer and the high-temperature solder layer do not generate toxic gas in the heating process, so that the harm to human bodies and the environment is avoided.

Description

Technical Field

[0001] The utility model relates to the field of household electrical appliances, in particular to an IGBT power module and a power device having the same. Background Art

[0002] In the related art, the mainstream packaging process of IGBT power modules requires two welding processes, namely, one welding between the liner and the chip, and a second welding between the liner and the substrate. In the traditional technology, solder with the same melting point is used for both the first welding and the second welding. When the second welding uses solder with the same melting point as the first welding, it is easy for the solder that has been melted and cooled in the first welding to be preheated and melted again, which increases the void rate of the product and seriously affects the product quality and yield.

[0003] In addition, the solder used in the first and second welding in traditional technology often contains lead. The lead-containing solder will produce toxic gas when heated to a certain temperature, causing great harm to the environment and human body. Utility Model Content

[0004] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the utility model is to provide an IGBT power module. According to the IGBT power module of the utility model, by using two lead-free high-temperature solder layers and low-temperature solder layers with different melting points, when welding the substrate and the liner, the high-temperature solder layer that has been welded between the chip and the liner will not be preheated and melted again, thereby improving the quality and yield of the IGBT power module. At the same time, the low-temperature solder layer and the high-temperature solder layer will not generate toxic gases during the heating process, and will not harm the human body and the environment.

[0005] The present application also proposes a power device having the above-mentioned IGBT power module.

[0006] According to the utility model, the IGBT power module includes: a chip; a lining plate, the lining plate is bonded to the chip, and a high-temperature solder layer is arranged between the chip and the lining plate; a substrate, the substrate is arranged on the side of the lining plate away from the chip, and a low-temperature solder layer is arranged between the lining plate and the substrate, wherein the melting point of the high-temperature solder layer is greater than the melting point of the low-temperature solder layer, and the high-temperature solder layer and the low-temperature solder layer are both constructed as lead-free solder.

[0007] According to the utility model, the IGBT power module adopts high-temperature solder layer welding between the chip and the liner, and adopts low-temperature solder layer welding between the substrate and the liner. The melting point of the high-temperature solder layer is greater than the melting point of the low-temperature solder layer. When the substrate and the liner are welded, the high-temperature solder layer that has been welded between the chip and the liner will not be preheated and melted again, thereby improving the quality and yield of the IGBT power module. At the same time, both the low-temperature solder layer and the high-temperature solder layer are constructed as lead-free solder. The low-temperature solder and the high-temperature solder will not generate toxic gases during the heating process, and will not harm the human body and the environment.

[0008] According to some embodiments of the present invention, the thickness of the high-temperature solder layer after welding is completed is H1 and satisfies: 0.1≤H1≤0.2.

[0009] According to some embodiments of the present invention, the thickness of the low-temperature solder layer after soldering is completed is H2 and satisfies: 0.2≤H1≤0.3.

[0010] According to some embodiments of the present invention, the melting point of the high temperature solder layer is T1, the melting point of the low temperature solder layer is T2, and the following condition is satisfied: 30°C ≤ (T1-T2) ≤ 40°C.

[0011] According to some embodiments of the present invention, the welding temperature of the high-temperature solder layer is Q1 and satisfies: Q1≤270°C.

[0012] According to some embodiments of the present invention, the high temperature solder layer and the low temperature solder layer are both constructed as solder sheets or solder paste.

[0013] According to some embodiments of the present invention, the low-temperature solder layer is constructed of SnBiAgCu.

[0014] According to some embodiments of the present invention, the area of ​​the high-temperature solder layer is S1, the area of ​​the chip is S2, and they satisfy: 0.9≤S1 / S2≤1.

[0015] According to some embodiments of the present invention, the area of ​​the low-temperature solder layer is S3, the area of ​​the lining plate is S4 and they satisfy: 0.9≤S3 / S4≤1.

[0016] The power equipment according to the utility model is briefly described below.

[0017] The power equipment according to the utility model is provided with the IGBT power module described in any one of the above embodiments. Since the power equipment according to the utility model is provided with the IGBT power module described in any one of the above embodiments, the power equipment according to the present application has good safety and high reliability.

[0018] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0020] Figure 1 This is a schematic diagram of the structure of an IGBT power module according to an embodiment of the utility model;

[0021] Figure 2 The figure is a schematic diagram of the welding process of an IGBT power module according to an embodiment of the utility model.

[0022] Reference numerals:

[0023] 100. IGBT power module;

[0024] 11. Chip; 12. Backing plate; 13. Substrate; 14. High-temperature solder layer; 15. Low-temperature solder layer. DETAILED DESCRIPTION

[0025] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0026] In the related art, the mainstream packaging process of IGBT power modules requires two welding processes, namely, one welding between the liner and the chip, and a second welding between the liner and the substrate. In the traditional technology, solder with the same melting point is used for both the first welding and the second welding. When the second welding uses solder with the same melting point as the first welding, it is easy for the solder that has been melted and cooled in the first welding to be preheated and melted again, which increases the void rate of the product and seriously affects the product quality and yield.

[0027] In addition, the solder used in the first and second welding in traditional technology often contains lead. The lead-containing solder will produce toxic gas when heated to a certain temperature, causing great harm to the environment and human body.

[0028] Reference below Figure 1-Figure 2 An IGBT power module according to an embodiment of the present invention is described.

[0029] According to the utility model, the IGBT power module 100 includes: a chip 11, a liner 12 and a substrate 13, wherein the liner 12 is bonded to the chip 11, and a high-temperature solder layer 14 is arranged between the chip 11 and the liner 12; the substrate 13 is arranged on the side of the liner 12 away from the chip 11, and a low-temperature solder layer 15 is arranged between the liner 12 and the substrate 13, wherein the melting point of the high-temperature solder layer 14 is greater than the melting point of the low-temperature solder layer 15, and both the high-temperature solder layer 14 and the low-temperature solder layer 15 are constructed as lead-free solder.

[0030] In some specific embodiments, the IGBT power module 100 is mainly composed of a chip 11, a liner 12 and a substrate 13. The liner 12 is arranged on the substrate 13. A battery cell is arranged on the side of the liner 12 away from the substrate 13. The battery cell and the liner 12 are welded by a high-temperature solder layer 14, and the liner 12 and the substrate 13 are welded by a low-temperature solder layer 15. The melting point of the high-temperature solder layer 14 is greater than the melting point of the low-temperature solder layer 15, so that in the process of welding the substrate 13 and the liner 12, the high-temperature solder layer 14 that has been welded between the chip 11 and the liner 12 will not be preheated and melted again, ensuring that the voids of the high-temperature solder after welding will not deteriorate or even delaminate, thereby improving the quality and yield of the IGBT power module 100. At the same time, since the low-temperature solder layer 15 and the high-temperature solder layer 14 are both constructed as lead-free solder, the low-temperature solder layer 15 and the high-temperature solder layer 14 will not generate toxic gases during the heating process, and will not harm the human body and the environment.

[0031] like Figure 2 As shown, the welding process of the IGBT power module 100 of the present application is as follows: first, the liner 12 is placed in the welding tray using a chip mounter, and the high-temperature solder layer 14 is cut to a welding size that matches the size of the chip 11. The nozzle of the chip mounter sucks the cut high-temperature solder layer 14 and mounts it to the corresponding position of the liner 12. The chip 11 is mounted on the high-temperature solder layer 14 of the liner 12 using an automatic chip mounter. The welding tray carries the liner 12 with the chip 11 mounted thereon into a vacuum welding furnace for a welding operation. In the process, the substrate 13 is placed in the welding tray by using a chip mounter, and the low-temperature solder layer 15 is cut into a welding size that matches the size of the liner 12. The nozzle of the chip mounter sucks the cut low-temperature solder layer 15 and mounts it to the corresponding position of the substrate 13. The liner 12 is mounted on the low-temperature solder layer 15 of the substrate 13 by using an automatic chip mounter. The welding tray carries the substrate 13 with the liner 12 mounted thereon into a vacuum welding furnace for a secondary welding process, thereby completing the manufacture of the IGBT power module 100.

[0032] According to the IGBT power module 100 of the utility model, a high-temperature solder layer 14 is used for welding between the chip 11 and the liner 12, and a low-temperature solder layer 15 is used for welding between the substrate 13 and the liner 12. The melting point of the high-temperature solder layer 14 is greater than the melting point of the low-temperature solder layer 15, so that when the substrate 13 and the liner 12 are welded, the high-temperature solder layer 14 that has been welded between the chip 11 and the liner 12 will not be preheated and melted again, thereby improving the quality and yield of the IGBT power module 100. At the same time, the low-temperature solder layer 15 and the high-temperature solder layer 14 are both constructed as lead-free solder. The low-temperature solder layer 15 and the high-temperature solder layer 14 will not generate toxic gases during the heating process, and will not harm the human body and the environment.

[0033] According to some embodiments of the present invention, the thickness of the high temperature solder layer 14 after soldering is completed is H1 and satisfies: 0.1≤H1≤0.2.

[0034] In some specific implementations, the thickness of the high-temperature solder layer 14 after welding is completed is H1, where H1 is set in the range of 0.1≤H1≤0.2, which can not only protect the battery cell and effectively prevent the battery cell from breaking, but also prevent the solder layer from being too thick after welding, thereby significantly increasing the thermal resistance of the battery cell, ensuring that the battery cell has good heat dissipation function.

[0035] According to some embodiments of the present invention, the thickness of the low-temperature solder layer 15 after soldering is completed is H2 and satisfies: 0.2≤H1≤0.3.

[0036] In some specific embodiments, the thickness of the low-temperature solder layer 15 after welding is completed is H2, wherein H2 is set within the range of 0.2≤H1≤0.3, so that the heat transfer between the lining 12 and the substrate 13 is more uniform, thereby ensuring the welding quality between the lining 12 and the substrate 13 and improving the stability and reliability of the connection between the lining 12 and the substrate 13.

[0037] According to some embodiments of the present invention, the melting point of the high temperature solder layer 14 is T1, the melting point of the low temperature solder layer 15 is T2, and the following condition is satisfied: 34°C ≤ (T1-T2) ≤ 40°C.

[0038] In some specific embodiments, the melting point of the high-temperature solder layer 14 is T1, the melting point of the low-temperature solder layer 15 is T2, and T1-T2 is set in the range of 30°C≤(T1-T2)≤40°C. Preferably, T1=217°C, T2=182°C, that is, when T1-T2 satisfies the above value range, since the welding temperature required for the high-temperature solder layer 14 is generally higher than the melting point, the maximum welding temperature required for the second welding will not exceed the melting point of the high-temperature solder layer 14, so that the high-temperature solder layer 14 will not have the risk of secondary melting, thereby avoiding the deterioration of the solder layer voids and improving the qualified rate of the IGBT power module 100 product.

[0039] According to some embodiments of the present invention, the soldering temperature of the high temperature solder layer 14 is Q1 and satisfies: Q1≤270°C.

[0040] In some specific implementations, the soldering temperature of the high temperature solder layer 14 is Q1, wherein Q1 is set within the range of Q1≤270°C.

[0041] When Q1 is set in the range of Q1≤270°C, since the high-temperature solder layer 14 used in the present application can be constructed as a lead-free alloy solder composed of SnAgCu, the maximum welding temperature required during welding does not exceed 270°C. Compared with the traditional technology, the welding temperature during the first welding is reduced, which effectively reduces the occurrence of tin beads, tin explosion, and tin creeping problems. At the same time, the reduction in the first welding temperature also shortens the heating and cooling time of the high-temperature solder layer 14, which can effectively improve the UPH (number of outputs per hour) of the first welding process and improve the output rate of the IGBT power module 100 per unit time.

[0042] According to some embodiments of the present invention, both the high temperature solder layer 14 and the low temperature solder layer 15 are constructed as solder sheets or solder pastes.

[0043] In some specific embodiments, the high-temperature solder layer 14 and the low-temperature solder layer 15 used in the present application can be constructed as solder paste, which is a mixture of metallic tin, flux and other ingredients, and can provide sufficient wettability during the welding process, so that the solder can better adhere to the welding surface and improve the welding quality. The solder paste can be customized according to different needs, such as adjusting its composition, viscosity, thixotropy, etc. to meet the welding requirements of different products. The solder paste can effectively transfer heat during the welding process so that the welding area is evenly heated, avoiding the occurrence of local overheating or cold drought. At the same time, the solder paste is inexpensive and can effectively reduce the manufacturing cost of the IGBT power module 100.

[0044] The high-temperature solder layer 14 and the low-temperature solder layer 15 used in the present application can also be constructed as welding pieces. The thickness, size and shape of the welding pieces can be planned and mass-produced according to product requirements. The user only needs to put the processed welding pieces directly between the chip 11 and the liner 12, and the substrate 13 and the liner 12, and then weld them. This process is simple and easy to operate, which shortens the time required for welding and improves the production efficiency of the IGBT power module 100.

[0045] According to some embodiments of the present invention, the low-temperature solder layer 15 is configured as SnBiAgCu.

[0046] In some specific embodiments, the low-temperature solder layer 15 can be constructed as a lead-free alloy solder composed of SnBiAgCu, and its microstructure after welding melting and cooling can improve the impact resistance and tensile mechanical strength, and at the same time has good wettability, which can effectively improve the welding quality between the substrate 13 and the lining plate 12, thereby improving the reliability of the IGBT power module 100.

[0047] According to some embodiments of the present invention, the area of ​​the high temperature solder layer 14 is S1, the area of ​​the chip 11 is S2, and the following condition is satisfied: 0.9≤S1 / S2≤1.

[0048] In some specific embodiments, since the high-temperature solder layer 14 can be constructed as solder paste or solder sheet, the solder paste and the solder sheet will melt after heating and their area will increase slightly. The area of ​​the high-temperature solder layer 14 is S1, and the area of ​​the chip 11 is S2. S1 / S2 is set within the range of 0.9≤S1 / S2≤1, so that the area of ​​the melted high-temperature solder layer 14 does not exceed the area of ​​the battery cell, thereby ensuring the consistency of the appearance of the battery cell and improving the appearance quality of the IGBT power module 100.

[0049] According to some embodiments of the present invention, the area of ​​the low-temperature solder layer 15 is S3, the area of ​​the liner 12 is S4, and the following relation is satisfied: 0.9≤S3 / S4≤1.

[0050] In some specific embodiments, since the low-temperature solder layer 15 can be constructed as solder paste or solder sheet, the solder paste and the solder sheet will melt after heating and their area will increase slightly. The area of ​​the low-temperature solder layer 15 is S3, and the area of ​​the liner 12 is S4. S3 / S4 is set within the range of 0.9≤S3 / S4≤1, so that the area of ​​the melted low-temperature solder layer 15 will not exceed the area of ​​the liner 12, thereby ensuring the neatness and consistency of the appearance after the liner 12 and the substrate 13 are welded, thereby improving the appearance quality of the IGBT power module 100.

[0051] The power equipment according to the utility model is briefly described below.

[0052] The power device according to the utility model is provided with the IGBT power module 100 described in any one of the above embodiments. Since the power device according to the utility model is provided with the IGBT power module 100 described in any one of the above embodiments, the power device according to the present application has good safety and high reliability.

[0053] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0054] In the description of the present invention, "first feature" or "second feature" may include one or more of the features.

[0055] In the description of the present invention, "plurality" means two or more.

[0056] In the description of the present invention, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact via another feature therebetween.

[0057] In the description of the present invention, a first feature “above”, “over” and “above” a second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature.

[0058] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0059] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. An IGBT power module (100), characterized in that: include: Chip (11); A liner (12), the liner (12) being bonded to the chip (11), and a high-temperature solder layer (14) being provided between the chip (11) and the liner (12); A substrate (13), the substrate (13) being arranged on a side of the backing plate (12) facing away from the chip (11), a low-temperature solder layer (15) being arranged between the backing plate (12) and the substrate (13), wherein the melting point of the high-temperature solder layer (14) is greater than the melting point of the low-temperature solder layer (15), and both the high-temperature solder layer (14) and the low-temperature solder layer are constructed of lead-free solder; The thickness of the high-temperature solder layer (14) after welding is completed is H1 and satisfies: 0.1≤H1≤0.2; the thickness of the low-temperature solder layer (15) after welding is H2 and satisfies: 0.2≤H1≤0.3; The area of ​​the high-temperature solder sheet is S1, the area of ​​the chip (11) is S2 and the following condition is satisfied: 0.9≤S1 / S2≤1; The area of ​​the low-temperature solder sheet is S3, the area of ​​the lining plate (12) is S4 and the following relationship is satisfied: 0.9≤S3 / S4≤1.

2. The IGBT power module (100) according to claim 1, characterized in that: The melting point of the high-temperature solder layer (14) is T1, the melting point of the low-temperature solder layer (15) is T2, and the following condition is satisfied: 30°C ≤ (T1-T2) ≤ 40°C.

3. The IGBT power module (100) according to claim 2, characterized in that: The welding temperature of the high-temperature solder layer (14) is Q1 and satisfies: Q1≤270°C.

4. The IGBT power module (100) according to claim 1, characterized in that: The high-temperature solder layer (14) and the low-temperature solder layer (15) are both constructed as solder sheets or solder paste.

5. The IGBT power module (100) according to claim 4, characterized in that: The low-temperature solder layer (15) is made of SnBiAgCu.

6. A power device, characterized in that: An IGBT power module (100) comprising any one of claims 1 to 5.

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