TOPCon-SE Solar Cell
By designing the optimized first and second laser doped regions in TOPCon-SE solar cells, the problem of insufficient SE laser graphic design in the prior art is solved, and more efficient battery performance and lower production costs are achieved.
Patent Information
- Application Number
- CN202421281701.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-06
- Publication Date
- 2025-04-11
- Estimated Expiration
- 2034-06-06
AI Technical Summary
The SE laser graphic design of existing TOPCon-SE solar cells is insufficient, resulting in poor contact between the silver main gate paste and silicon wafer, which cannot fully reflect the advantages of TOPCon-SE batteries.
A TOPCon-SE solar cell is designed, and the front area of the silicon wafer includes the first and second laser doped regions, the second laser doped region completely covers the secondary gate line region, and the first laser doped region partially covers the main gate line region, and the corresponding relationship with the main gate line and the secondary gate line is optimized by adjusting the position and size of the laser doped region.
It effectively reduces internal and external losses, improves the overall performance of the battery, reduces production costs, improves production efficiency, and improves the output current and voltage of the battery while ensuring photoelectric conversion efficiency.
Smart Images
Figure CN222750801U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of solar cells, in particular to a TOPCon-SE solar cell. Background Art
[0002] TOPCon-SE cell is a solar cell that combines TOPCon cell structure and selective emitter (SE) technology. Selective emitter (SE) refers to the use of high energy density of laser to perform secondary doping on the boron-doped area, so that the metal grid line area and the non-metal grid line area form a high-low junction, reduce the contact resistance between the front metal electrode and the silicon wafer, and reduce the recombination of the diffusion layer, thereby improving the output current and voltage of the battery and increasing the photoelectric conversion efficiency. The SE laser pattern commonly used in the industry is only used in the area where the fine grid lines are printed after laser processing. Such SE laser patterns make it impossible for the front silver main grid paste to form a better contact with the silicon wafer, and cannot fully reflect the advantages of TOPCON-SE cells compared to conventional cells.
[0003] Therefore, it is necessary to design a TOPCon-SE solar cell to solve the above problems. Utility Model Content
[0004] The utility model aims to provide a TOPCon-SE solar cell with low cost and high conversion efficiency.
[0005] To achieve the above-mentioned purpose, the utility model adopts the following technical scheme: a TOPCon-SE solar cell, which includes a silicon wafer, a front electrode and a back electrode, the front electrode includes a plurality of main grid lines arranged in parallel and a plurality of auxiliary grid lines arranged in parallel perpendicular to the main grid lines, the front area of the silicon wafer includes a first laser doping area and a second laser doping area, the second laser doping area is arranged along the area where the auxiliary grid lines are located and completely covers the area where the auxiliary grid lines are located, and the first laser doping area is arranged along the area where the main grid lines are located and partially covers the area where the main grid lines are located.
[0006] As a further improved technical solution of the utility model, the first laser doped region covers a region where a main grid line is located every other main grid line.
[0007] As a further improved technical solution of the utility model, the first laser doping region covers a region where a main grid line is located every two main grid lines.
[0008] As a further improved technical solution of the present invention, the first laser doped region covers all the main grid lines in the main grid line arrangement direction, and covers 1 / 2 to 1 / 3 of the length of the main grid lines in the main grid line length direction.
[0009] As a further improved technical solution of the utility model, the TOPCon-SE solar cell includes two half-cell regions, and the first laser doping regions of the two half-cell regions are staggered.
[0010] As a further improved technical solution of the utility model, the TOPCon-SE solar cell includes two half-cell regions, and the first laser doping regions of the two half-cell regions are arranged in alignment.
[0011] As a further improved technical solution of the utility model, the width of the first laser doping region is 70-100 μm.
[0012] As a further improved technical solution of the utility model, the width of the second laser doping region is 70-100 μm. Controlling the width of the doping region helps to achieve the best carrier collection efficiency and the minimum series resistance.
[0013] It can be seen from the above technical solutions that the TOPCon-SE solar cell of the utility model optimizes the regional position and size of the first laser doping area and the second laser doping area, especially the correspondence between the laser doping area and the main grid line and the auxiliary grid line, which not only effectively reduces the intrinsic and external losses and improves the overall performance of the battery, but also can reduce production costs and improve production efficiency while at least ensuring the photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 It is a schematic diagram of the TOPCon-SE solar cell of the present invention.
[0015] Figure 2 Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 1.
[0016] Figure 3 Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 2.
[0017] Figure 4 Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 3.
[0018] Figure 5 Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 4.
[0019] Figure 6 Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 5.
[0020] Figure 7Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 6.
[0021] Figure 8 Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 7.
[0022] Fig. 9 Schematic diagram of the position of the first laser doping region of the TOPCon-SE solar cell of Example 8. DETAILED DESCRIPTION
[0023] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.
[0024] Please refer to Figure 1 As shown, the utility model provides a TOPCon-SE solar cell, which includes a silicon wafer, a front electrode and a back electrode. The front electrode includes a plurality of main grid lines arranged in parallel and a plurality of auxiliary grid lines arranged in parallel perpendicular to the main grid lines, and the front area of the silicon wafer includes a first laser doping area and a second laser doping area, the second laser doping area is arranged along the area where the auxiliary grid lines are located and completely covers the area where the auxiliary grid lines are located, and the first laser doping area is arranged along the area where the main grid lines are located and partially covers the area where the main grid lines are located.
[0025] Preferably, the first laser doped region 3 covers a region where a main grid line 1 is located every other main grid line 1. Figure 2 In Example 2, the first laser doping regions 3 are arranged in a manner that each first laser doping region 3 covers an area where a main grid line 1 is located, and the first laser doping regions 3 on the two half-cell regions 11 and 12 of the TOPCon-SE solar cell are staggered, that is, the first laser doping region 3 on the half-cell region 11 is directly opposite to the main grid line that is not laser doped on the half-cell region 12; compared with laser doping of the entire main grid area, the laser doping area can be reduced by 1 / 2; please also refer to Figure 3 As shown, in Example 4, the first laser doping region 3 is also arranged to cover the area where a main grid line 1 is located with one main grid line spaced apart. The difference from Example 3 is that in this embodiment, the first laser doping regions 3 on the two half-cell areas 11 and 12 of the TOPCon-SE solar cell are aligned.
[0026] Preferably, the first laser doped region 3 covers a region where a main grid line 1 is located every two main grid lines 1. Figure 4 and Figure 5As shown, in the batteries of Example 3 and Example 4, the first laser doped region 3 covers the area where a main grid line 1 is located every two main grid lines 1. The difference is that in Example 5, the first laser doped regions 3 of the two half-cell areas are aligned one by one, while in Example 6, the first laser doped regions 3 of the two half-cell areas are staggered.
[0027] Please refer to Figures 6 to 9 As shown, the first laser doped region 3 covers all the main grid lines 1 in the arrangement direction of the main grid lines 1, and covers 1 / 2 to 1 / 3 of the length of the main grid lines in the length direction of the main grid lines. Figure 6 , which is a schematic diagram of a battery of Example 5, wherein the first laser doping regions 3 on the half-cell regions 11 and 12 are half the length of the main grid line, so compared with the laser doping of the entire main grid area, the laser doping area can be reduced by 1 / 2; the first laser doping regions 3 on the half-cell regions 11 and 12 are arranged at one end away from each other. Figure 7 As shown, the battery of Example 6 is different from Example 6 in that the first laser doping regions 3 on the half-chip regions 11 and 12 are both arranged in the middle of the half-chip regions; Figure 8 In the cell of the embodiment 7 shown, the first laser doping region 3 on the half-cell region 11 is arranged on the outer side of the half-cell region 11, and the first laser doping region 3 on the half-cell region 12 is arranged on the inner side of the half-cell region 12. Fig. 9 In the embodiment 8 shown, the first laser doped region 3 completely covers all the main gate areas on the half-chip area 11, and the main gate line positions on the other half-chip area 12 are not laser doped.
[0028] Preferably, the width of the first laser doped region is 70-100 μm, and the width of the second laser doped region is 70-100 μm. Controlling the width of the doped region helps to achieve better carrier collection efficiency and smaller series resistance.
[0029] The solar cells in the above embodiments were tested, and the test results are shown in Table 1 below:
[0030] Table 1 Test data of solar cells of various embodiments
[0031]
[0032] From the test results in Table 1 above, it can be seen that the solar cells of the above embodiments have a high test efficiency (all > 26%), which can more efficiently convert light energy into electrical energy, providing more sufficient power supply for practical applications; the outstanding performance of short-circuit current also helps to improve the overall current output capacity; the low series resistance can reduce energy loss and make the energy transmission of the battery smoother; the low temperature coefficient ensures the stable working performance of the battery under different temperature environments and reduces the adverse effects of temperature on it. In addition, the laser processing time of the solar cell of the utility model is greatly reduced, which not only improves the production efficiency, but also reduces the production cost and enhances the competitiveness of the product in the market.
[0033] The terms used herein to indicate spatial relative positions are used for the purpose of convenience to describe the relationship of one feature relative to another feature as shown in the drawings. It is understood that, depending on the different positions of the products, the terms of spatial relative positions may be intended to include different orientations in addition to the orientations shown in the drawings, and should not be construed as limitations on the claims.
[0034] In addition, the above embodiments are only used to illustrate the present invention and are not intended to limit the technical solutions described in the present invention. The understanding of this specification should be based on the technical personnel in the relevant technical field. Although this specification has described the present invention in detail with reference to the above embodiments, ordinary technical personnel in the field should understand that the technical personnel in the relevant technical field can still modify or make equivalent substitutions to the present invention, and all technical solutions and improvements thereof that do not depart from the spirit and scope of the present invention should be included in the scope of the claims of the present invention.
Claims
1. A TOPCon-SE solar cell, characterized in that: It includes a silicon wafer, a front electrode and a back electrode, the front electrode includes a plurality of main grid lines arranged in parallel and a plurality of auxiliary grid lines arranged in parallel perpendicular to the main grid lines, the front area of the silicon wafer includes a first laser doping area and a second laser doping area, the second laser doping area is arranged along the area where the auxiliary grid lines are located and completely covers the area where the auxiliary grid lines are located, and the first laser doping area is arranged along the area where the main grid lines are located and partially covers the area where the main grid lines are located.
2. The TOPCon-SE solar cell according to claim 1, characterized in that: The first laser doped region covers a region where a main gate line is located every other main gate line.
3. The TOPCon-SE solar cell according to claim 1, characterized in that: The first laser doped region covers a region where a main gate line is located every two main gate lines.
4. The TOPCon-SE solar cell according to claim 1, characterized in that: The first laser doped region covers all the main gate lines in the main gate line arrangement direction, and covers 1 / 2 to 1 / 3 of the length of the main gate lines in the main gate line length direction.
5. The TOPCon-SE solar cell according to claim 1, characterized in that: The TOPCon-SE solar cell includes two half-cell regions, and the first laser doping regions of the two half-cell regions are staggered.
6. The TOPCon-SE solar cell according to claim 1, characterized in that: The TOPCon-SE solar cell includes two half-cell regions, and the first laser doping regions of the two half-cell regions are arranged in alignment.
7. The TOPCon-SE solar cell according to claim 1, characterized in that: The width of the first laser doped region is 70-100 μm.
8. The TOPCon-SE solar cell according to claim 1, characterized in that: The width of the second laser doping region is 70-100 μm.