Wire cut electrical discharge machining device for large-size silicon carbide

Abstract

The utility model provides a large-size silicon carbide wire cut electrical discharge machining device which comprises a main body assembly, a fixing assembly is arranged at the top of the main body assembly, and the fixing assembly comprises a base, a fixing plate, a second driving motor, a rotating table, an insulation transition plate, a three-jaw chuck, a conductive transition plate, a silicon carbide crystal ingot, a support and an electric brush. A fixing plate is fixedly connected to the top of the base, a second driving motor is installed on one side of the fixing plate, and an output shaft of the second driving motor is fixedly connected with the rotating table. The lead screw rotates to drive the electrode wire to move to cut silicon carbide, meanwhile, the driving motor is used for driving a silicon carbide crystal ingot to rotate in the cutting process, rotary machining partition cutting is achieved, and the cutting thickness of the electrode wire to the silicon carbide is reduced; by means of the wire cut electrical discharge machining method, machining of large-diameter silicon carbide materials can be achieved, and particularly the difficulty of cutting machining of wafer substrates with the size larger than 12 inches is broken through.

Description

Technical Field

[0001] The utility model relates to a processing device and a method, in particular to an electric spark wire cutting processing device for large-size silicon carbide, belonging to the technical field of electric spark wire cutting. Background Art

[0002] The wire EDM technology uses electrode wire (molybdenum wire, copper wire, etc.) as the tool electrode. Under the action of pulse power, spark discharge is formed between the tool electrode and the workpiece. The spark channel instantly generates a large amount of heat, causing the workpiece surface to melt or even gasify. The wire EDM technology has the following advantages: there is no significant mechanical cutting force during processing, and no matter how hard and rigid the workpiece is, any conductive or semi-conductive material can be processed; the processing accuracy is high, the cutting seam produced during processing is narrow, and the amount of material removed is small, which is conducive to improving the utilization rate of materials.

[0003] Silicon carbide (SiC) material has high hardness and strength at high temperatures. The gasification temperature of silicon carbide is at least above 2000°C. Silicon carbide has stable chemical properties, high temperature resistance, oxidation resistance, and has excellent thermal conductivity and low thermal expansion coefficient. Due to these characteristics, silicon carbide is widely used in high temperature materials, electronic equipment, solar panels, semiconductor high-power components and other fields.

[0004] Semiconductor materials are highly brittle and have low fracture toughness. Traditional mechanical processing technology makes it difficult to process semiconductor materials, which are prone to collapse and fracture. Wire EDM has the advantages of high energy and no macroscopic stress. During the processing, there is no actual macroscopic contact between the electrode wire and the workpiece, so semiconductor materials are not prone to collapse and fracture during the processing.

[0005] During the process of cutting materials with electric spark discharge, the electrode wire will also wear out and become thinner. When cutting thick materials, the working fluid cooling and chip removal in the cutting seam will deteriorate, resulting in reduced processing efficiency, severe electrode wire wear and even burnout. Due to the characteristics of silicon carbide, it is technically difficult to use electric spark wire cutting to process silicon carbide ingots with a diameter of more than 200 mm. Therefore, a large-size silicon carbide electric spark wire cutting processing device is proposed. Utility Model Content

[0006] In view of this, the utility model provides an electric spark wire cutting processing device for large-sized silicon carbide to solve or alleviate the technical problems existing in the prior art and at least provide a beneficial choice.

[0007] The technical solution of the embodiment of the utility model is implemented as follows: a large-size silicon carbide wire-cutting electric spark machining device comprises a main body assembly, a fixing assembly is arranged on the top of the main body assembly, and the fixing assembly comprises a base, a fixing plate, a second driving motor, a rotating table, an insulating transition plate, a three-jaw chuck, a conductive transition plate, a silicon carbide ingot, a bracket and a brush;

[0008] A fixing plate is fixedly connected to the top of the base, a second drive motor is installed on one side of the fixing plate, an output shaft of the second drive motor is fixedly connected to a rotating table, the rotating table is rotatably connected to one side of the fixing plate, an insulating transition plate is fixedly connected to one side of the rotating table, a three-jaw chuck is fixedly connected to one side of the insulating transition plate, a conductive transition plate is detachably fixedly connected to the inside of the three-jaw chuck, a silicon carbide ingot is fixedly connected to one side of the conductive transition plate, a bracket is fixedly connected to one side of the fixing plate, and a brush is installed on the top of the bracket.

[0009] Further preferably: the main body assembly includes an EDM machine body, a control console and a pulse power supply;

[0010] A control console and a pulse power supply are installed on the top of the main body of the electric spark cutting machine. The positive pole of the pulse power supply is electrically connected to the brush, and the conductor of the brush is electrically connected to the three-jaw chuck and the conductive transition plate.

[0011] Further preferably, a workbench is fixedly connected to the upper surface of the electric spark cutting machine body.

[0012] Further preferably, the base is installed on the upper surface of the workbench.

[0013] Further preferably, a first driving motor is installed on the rear surface of the workbench.

[0014] Further preferably, the output shaft of the first driving motor is fixedly connected to one end of a screw rod, and the screw rod is rotatably connected to the inner wall of the workbench.

[0015] Further preferably, the outer side wall of the screw rod is threadedly connected with a mounting seat.

[0016] Further preferably, an electrode wire is installed inside the mounting seat, and the electrode wire is electrically connected to the negative pole of the pulse power supply.

[0017] The embodiment of the utility model has the following advantages due to the adoption of the above technical solution:

[0018] 1. The utility model adopts electric spark wire cutting to process silicon carbide ingots. Compared with diamond wire cutting, electric spark wire cutting is non-mechanical processing. In addition to the explosive force of discharge, the silicon carbide workpiece has no mechanical cutting force, and the material is not easy to break, which effectively improves the processing success rate.

[0019] 2. Compared with diamond wire cutting, electric spark wire cutting has a smaller electrode wire diameter and discharge gap, and a narrower cutting gap, which can effectively improve the utilization rate of silicon carbide materials.

[0020] 3. The utility model drives the electrode wire to move and cut silicon carbide by rotating the lead screw. At the same time, the driving motor is used to drive the silicon carbide ingot to rotate during the cutting process, so as to realize rotary processing and partition cutting, reduce the cutting thickness of the electrode wire on silicon carbide, and make the electric spark wire cutting processing method able to realize the processing of large-diameter silicon carbide materials, especially breaking through the difficulty of cutting and processing wafer substrates above 12 inches.

[0021] Fourth, the utility model adopts the method of electric spark discharge cutting, and the flatness and surface roughness of the cutting are greatly improved compared with the diamond wire, which reduces the workload of subsequent polishing and thinning of the silicon carbide wafer.

[0022] The above summary is for the purpose of description only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the utility model will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 It is a structural diagram of the utility model;

[0025] Figure 2 It is a front view structural diagram of the utility model;

[0026] Figure 3 It is a top view of the structure of the utility model;

[0027] Figure 4 It is a schematic diagram of the first area of ​​the first circle from the outside to the inside of the cutting of silicon carbide of the utility model;

[0028] Figure 5 This is a schematic diagram of the relative positions of the electrode wire and silicon carbide after the first region of the first circle of the present invention is cut;

[0029] Figure 6 It is a schematic diagram of the second area of ​​the first circle from the outside to the inside of the cutting silicon carbide of the utility model;

[0030] Figure 7 It is a schematic diagram of the eight regions of the first circle from the outside to the inside of the cutting of silicon carbide according to the present invention;

[0031] Figure 8 It is a schematic diagram of the first area of ​​the second circle from the outside to the inside of the cutting silicon carbide of the utility model;

[0032] Fig. 9 It is a schematic diagram of the eight regions of the second circle from the outside to the inside of the cutting of silicon carbide according to the present invention;

[0033] Fig.10 This is a schematic diagram of the eight regions of the nth circle from the outside to the inside of the cutting of silicon carbide according to the present invention.

[0034] Figure numerals: 10, main assembly; 11, EDM cutting machine body; 12, control console; 13, pulse power supply; 14, workbench; 15, first drive motor; 16, lead screw; 17, mounting seat; 18, electrode wire; 20, fixing assembly; 21, base; 22, fixing plate; 23, second drive motor; 24, rotating table; 25, insulating transition plate; 26, three-jaw chuck; 27, conductive transition plate; 28, silicon carbide ingot; 29, bracket; 210, brush. DETAILED DESCRIPTION

[0035] The embodiments of the present utility model are described in detail below with reference to the accompanying drawings.

[0036] It should be clear that the following embodiments of the present disclosure are described by specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that the following embodiments and features in the embodiments can be combined with each other in the absence of conflict. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present disclosure.

[0037] It should be noted that various aspects of the embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein may be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on the present disclosure, it should be understood by those skilled in the art that an aspect described herein may be implemented independently of any other aspect, and two or more of these aspects may be combined in various ways. For example, any number of aspects described herein may be used to implement the device and / or practice the method. In addition, other structures and / or functionalities other than one or more of the aspects described herein may be used to implement this device and / or practice this method.

[0038] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present disclosure. The drawings only show components related to the present disclosure rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0039] Additionally, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects described may be practiced without these specific details.

[0040] Embodiment 1

[0041] like Figure 1-Figure 3 As shown, the embodiment of the utility model provides an electric spark wire cutting processing device for large-size silicon carbide, including a main body component 10, a fixing component 20 is arranged on the top of the main body component 10, and the fixing component 20 includes a base 21, a fixing plate 22, a second driving motor 23, a rotating table 24, an insulating transition plate 25, a three-jaw chuck 26, a conductive transition plate 27, a silicon carbide ingot 28, a bracket 29 and a brush 210;

[0042] A fixed plate 22 is fixedly connected to the top of the base 21, a second drive motor 23 is installed on one side of the fixed plate 22, the output shaft of the second drive motor 23 is fixedly connected to a rotating table 24, the rotating table 24 is rotatably connected to one side of the fixed plate 22, an insulating transition plate 25 is fixedly connected to one side of the rotating table 24, a three-jaw chuck 26 is fixedly connected to one side of the insulating transition plate 25, a conductive transition plate 27 is detachably fixedly connected to the inside of the three-jaw chuck 26, a silicon carbide ingot 28 is fixedly connected to one side of the conductive transition plate 27, a bracket 29 is fixedly connected to one side of the fixed plate 22, and a brush 210 is installed on the top of the bracket 29.

[0043] In this embodiment, specifically: the main assembly 10 includes an EDM machine tool body 11, a control console 12 and a pulse power supply 13;

[0044] A control console 12 and a pulse power supply 13 are installed on the top of the EDM cutting machine body 11. The positive pole of the pulse power supply 13 is electrically connected to the brush 210. The conductor of the brush 210 is electrically connected to the three-jaw chuck 26 and the conductive transition plate 27. The working state of the first drive motor 15 and the second drive motor 23 is controlled by the control console 12, so as to accurately control the feed, retraction speed and position of the electrode wire 18, and the rotation direction, angle and speed of the rotary table 24.

[0045] In this embodiment, specifically: a workbench 14 is fixedly connected to the upper surface of the electric spark cutting machine body 11 .

[0046] In this embodiment, specifically: the base 21 is installed on the upper surface of the workbench 14, and a guide rail can be installed at the bottom of the base 21 to achieve continuous cutting of silicon carbide.

[0047] In this embodiment, specifically: a first driving motor 15 is installed on the rear surface of the workbench 14 , and the first driving motor 15 drives the lead screw 16 to rotate.

[0048] In this embodiment, specifically: the output shaft of the first driving motor 15 is fixedly connected to one end of the screw rod 16 , and the screw rod 16 is rotatably connected to the inner wall of the workbench 14 , and the screw rod 16 drives the mounting seat 17 to move when rotating.

[0049] In this embodiment, specifically: the outer wall of the screw rod 16 is threadedly connected with a mounting seat 17 , and the electrode wire 18 moves together with the mounting seat 17 .

[0050] In this embodiment, specifically: an electrode wire 18 is installed inside the mounting seat 17, and the electrode wire 18 is electrically connected to the negative pole of the pulse power supply 13. The pulse power supply 13 transmits pulse voltage and current to between silicon carbide and the electrode wire 18, breaking through the insulating medium of the working fluid between the two and generating electric spark discharge. The instantaneous high temperature in the discharge area can vaporize or decompose the silicon carbide, thereby realizing the cutting processing of the silicon carbide by the electrode wire 18.

[0051] When the utility model is working: a large-diameter silicon carbide ingot 28 with good conductivity is fixed on the three-jaw chuck 26 of the electric spark cutting machine body 11, and a pulse voltage and current are transmitted between the silicon carbide ingot 28 and the electrode wire 18 through the pulse power supply 13, so as to break through the insulating medium of the working fluid between the two and generate electric spark discharge. The instantaneous high temperature in the discharge area can gasify or decompose the silicon carbide, so as to realize the cutting process of the electrode wire 18 on the silicon carbide. When cutting, the first drive motor 15 drives the lead screw 16 to rotate, so that the mounting seat 17 and the electrode wire 18 reciprocate along the lead screw 16 to perform cutting. During the cutting process, the control console 12 controls the second drive motor 23 to work, so that the rotating table 24 rotates, and the cutting surface is divided into multiple areas for cutting in sequence.

[0052] Embodiment 2

[0053] like Figure 4-Figure 10 As shown, the embodiment of the utility model provides a method for processing large-size silicon carbide by wire electric discharge machining, wherein the method for controlling cutting and rotating table rotation of the wire electric discharge machining machine is: using G code instructions in the processing program file to automatically cut the silicon carbide ingot 28. The G code instructions used in the processing program mainly include:

[0054] Linear interpolation code G01XxYy: Turn on the machining power, and the electrode wire 18 runs from the starting point to the end point at the machining speed.

[0055] Linear movement code G00XxYy: Turn off the machining power, and the electrode wire 18 moves quickly from the starting point to the end point.

[0056] A-axis rotation code G00Aa: Turn off the machining power, and the A-axis will rotate rapidly counterclockwise by angle a. When a is a negative number, the A-axis will rotate rapidly clockwise by angle |a|.

[0057] According to the processing capability of the wire-cut electric discharge machine tool for cutting the silicon carbide ingot 28, a reasonable processing program can be compiled to make the processing more stable and more efficient.

[0058] The processing capability of the wire-cut EDM machine tool for cutting the silicon carbide ingot 28 is as follows:

[0059] The conductive silicon carbide ingot 28 can be cut into circular silicon carbide slices with a diameter of 100-350 mm and a thickness of 0.5-1.5 mm using an electric spark wire cutting machine as a raw material for silicon carbide wafers.

[0060] When the silicon carbide cutting thickness is less than 200mm, the electric spark wire cutting machine can cut silicon carbide more stably. When the silicon carbide cutting thickness is 200 to 350mm or even larger, the efficiency of the electric spark wire cutting machine in cutting silicon carbide will become lower, and the electrode wire 18 will break more frequently, affecting the processing efficiency and processing quality.

[0061] The principle of regional division for cutting the silicon carbide ingot 28 is to make the silicon carbide in direct contact with the electrode wire 18 less than a certain thickness. Assume that the diameter of the silicon carbide ingot 28 is D=350mm. Assume that the thickness of the silicon carbide in direct contact with the electrode wire 18 is h. The data obtained through actual processing show that when h is less than 200mm, the efficiency of cutting silicon carbide is higher and the probability of the electrode wire 18 breaking is lower. Therefore, limiting h to less than 200mm during cutting is conducive to the stable cutting of silicon carbide.

[0062] The EDM wire cutting method for large-size silicon carbide specifically includes:

[0063] Step 1: Cut the first area of ​​the first circle of silicon carbide from the outside to the inside. Figure 4 As shown, using code G01X20, the machine tool turns on the processing power, and the electrode wire 18 cuts silicon carbide. The electrode wire 18 cuts a distance x1=20mm from the outside to the center of the silicon carbide ingot 28 with a diameter of D=350mm. Cut the first area S1 of the first circle from the outside to the inside of the silicon carbide. The maximum thickness of the silicon carbide in direct contact with the electrode wire 18 in this area S is h1=162.48mm, which meets the restriction requirement of cutting thickness less than 200mm, and h1 is greater than the side length of the inscribed regular octagon of the silicon carbide ingot 28. In the figure, L is an auxiliary line for drawing, and the spacing of each grid is 10mm.

[0064] Step 2: Figure 5 As shown, using code G00X-20, the machine tool turns off the processing power, the electrode wire 18 does not cut silicon carbide, and the electrode wire 18 quickly retreats a distance x1 = 20 mm in the cut seam.

[0065] Step 3: Figure 5 As shown, using code G00A45, the machine tool turns off the processing power, the electrode wire 18 does not cut silicon carbide, and the turntable drives the ingot to rotate 45° counterclockwise.

[0066] Step 4: Repeat steps 1-3 to cut the second area of ​​the first circle of silicon carbide from the outside to the inside (such as Figure 6 As shown) to area 8. Figure 7 As shown, the first circle of the crystal ingot from the outside to the inside has been cut by the electrode wire 18, and the cross-section of the inner part of the crystal ingot that has not been cut is a regular octagon with a distance of opposite sides B1 = 310 mm.

[0067] Step 5: Figure 8 As shown, the first area S2 of the second circle of silicon carbide from the outside to the inside is cut. Using code G01X20, the machine tool turns on the processing power, and the electrode wire 18 cuts silicon carbide. The electrode wire 18 cuts the distance x2 = 20mm from the outside of the octagon with a distance B1 = 310mm from the opposite side of the silicon carbide that has not been cut to the center. The maximum thickness of the silicon carbide in this area 23 that is in direct contact with the electrode wire 18 for discharge is h2 = 168.41mm, which meets the restriction requirement of cutting thickness less than 200mm.

[0068] Step 6, using code G00X-20, the machine tool turns off the processing power, the electrode wire 18 does not cut silicon carbide, and the electrode wire 18 quickly retreats in the cut slit by a distance of x2=20 mm.

[0069] Step 7, using code G00A45, the machine tool turns off the processing power, the electrode wire 18 does not cut the silicon carbide, and the turntable drives the ingot to rotate 45° counterclockwise.

[0070] Step 8: Repeat steps 5-7 to cut the silicon carbide from the second area to the eighth area of ​​the second circle from the outside to the inside. Fig. 9 As shown, the second circle of the ingot from the outside to the inside has been cut by the electrode wire 18, and the cross section of the inner part of the ingot that has not been cut is a regular octagon with a distance of B2 = 270 mm from the opposite side, and B2 <B1。

[0071] Step 9: Figure 8 As shown, the 3rd to nth circles of the ingot are cut from the outside to the inside in the same way as steps 5-8. When cutting each circle of cross-section, the distance xn of the electrode wire 18 can be adjusted, but it is necessary to ensure that the maximum thickness hn of the silicon carbide that is in direct contact with the electrode wire 18 for discharge meets the restriction requirement of cutting thickness less than 200mm. Until the cross-section of the uncut part inside the ingot is a regular octagon with opposite sides Bn, and Bn is less than 200mm.

[0072] Step 10. Because the maximum thickness Bn of the uncut portion inside the ingot is less than 200 mm, code G01XBn is used. The machine tool turns on the processing power, and the electrode wire 18 cuts the silicon carbide. The electrode wire 18 cuts a distance Bn from the outside of the octagon of the uncut opposite side distance Bn to the center.

[0073] Through steps 1-10, a circular slice with a diameter of D=350 mm can be cut from the silicon carbide ingot 28 with a diameter of D=350 mm. During the entire cutting process, the thickness of the silicon carbide directly contacting the electrode wire 18 for discharge is always less than 200 mm, ensuring cutting efficiency and stable cutting.

[0074] The utility model adopts electric spark wire cutting to process silicon carbide ingot 28. Compared with diamond wire cutting, electric spark wire cutting is non-mechanical processing. Silicon carbide workpiece has no mechanical cutting force except the explosive force of discharge, and the material is not easy to break, which effectively improves the processing success rate.

[0075] Compared with diamond wire cutting, electric spark wire cutting has a smaller wire diameter and discharge gap of the electrode wire 18 and a narrower cutting gap, which can effectively improve the utilization rate of silicon carbide materials.

[0076] The utility model drives the electrode wire 18 to move and cut silicon carbide by rotating the lead screw 16. At the same time, the driving motor is used to drive the silicon carbide ingot 28 to rotate during the cutting process to realize rotary processing and partitioned cutting, which reduces the cutting thickness of the silicon carbide by the electrode wire 18. The electric spark wire cutting processing method can realize the processing of large-diameter silicon carbide materials, especially breaking through the difficulty of cutting and processing wafer substrates above 12 inches.

[0077] The utility model adopts an electric spark discharge cutting method, and compared with diamond wire, the cutting flatness and surface roughness are greatly improved, thereby reducing the workload of subsequent polishing and thinning of silicon carbide wafers.

[0078] The basic principles of the present disclosure are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present disclosure are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present disclosure. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, and are not limitations. The above details do not limit the present disclosure to the necessity of adopting the above specific details to be implemented.

[0079] The above is only a specific implementation of the utility model, but the protection scope of the utility model is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed by the utility model, which should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims

1. A large-size silicon carbide wire-cutting electric discharge machining device, comprising a main assembly (10), characterized in that: A fixing assembly (20) is arranged on the top of the main assembly (10), and the fixing assembly (20) comprises a base (21), a fixing plate (22), a second driving motor (23), a rotating table (24), an insulating transition plate (25), a three-jaw chuck (26), a conductive transition plate (27), a silicon carbide ingot (28), a bracket (29) and a brush (210); A fixing plate (22) is fixedly connected to the top of the base (21), a second drive motor (23) is installed on one side of the fixing plate (22), an output shaft of the second drive motor (23) is fixedly connected to a rotating table (24), the rotating table (24) is rotatably connected to one side of the fixing plate (22), an insulating transition plate (25) is fixedly connected to one side of the rotating table (24), a three-jaw chuck (26) is fixedly connected to one side of the insulating transition plate (25), a conductive transition plate (27) is detachably fixedly connected inside the three-jaw chuck (26), a silicon carbide crystal ingot (28) is fixedly connected to one side of the conductive transition plate (27), a bracket (29) is fixedly connected to one side of the fixing plate (22), and a brush (210) is installed on the top of the bracket (29).

2. The large-size silicon carbide wire-cutting electric discharge machining device according to claim 1, characterized in that: The main body component (10) comprises an electric spark cutting machine tool body (11), a control console (12) and a pulse power supply (13); A control console (12) and a pulse power supply (13) are installed on the top of the electric spark cutting machine body (11); the positive electrode of the pulse power supply (13) is electrically connected to the brush (210); and the conductor of the brush (210) is electrically connected to the three-jaw chuck (26) and the conductive transition plate (27).

3. The large-size silicon carbide wire-cutting electric discharge machining device according to claim 2, characterized in that: A workbench (14) is fixedly connected to the upper surface of the electric spark cutting machine tool body (11).

4. The large-size silicon carbide wire-cutting electric discharge machining device according to claim 3, characterized in that: The base (21) is installed on the upper surface of the workbench (14).

5. The large-size silicon carbide wire-cutting electric discharge machining device according to claim 4, characterized in that: A first driving motor (15) is installed on the rear surface of the workbench (14).

6. The large-size silicon carbide wire-cutting electric discharge machining device according to claim 5, characterized in that: The output shaft of the first driving motor (15) is fixedly connected to one end of a screw rod (16), and the screw rod (16) is rotatably connected to the inner wall of the workbench (14).

7. The large-size silicon carbide wire-cutting electric discharge machining device according to claim 6, characterized in that: The outer side wall of the screw rod (16) is threadedly connected with a mounting seat (17).

8. The large-size silicon carbide wire-cutting electric discharge machining device according to claim 7, characterized in that: An electrode wire (18) is installed inside the mounting seat (17), and the electrode wire (18) is electrically connected to the negative pole of the pulse power supply (13).

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