Three-dimensional stacked high-voltage super-power power amplifier module

Abstract

The utility model discloses a three-dimensional stacked high-voltage super-power power amplifier module, which adopts a three-dimensional stacked structural design, and is characterized in that a power supply module for realizing a power supply control function in the module is arranged above a power amplifier module for realizing a radio-frequency signal output function; the vertical electrical interconnection between the power supply part and the radio frequency module part is realized through the metal column, and the electrical interconnection realized based on the mode can ensure that smaller parasitic inductance exists between the output port of the power supply module and the power supply port of the radio frequency power amplifier module, so that smaller overshoot voltage exists when the high-power radio frequency power amplifier is turned on or turned off; therefore, the working reliability of the high-voltage super-power power amplifier module can be greatly improved, and the miniaturization design of the power amplifier module can be realized. Under the condition that design complexity and cost do not need to be increased too much, working reliability of the high-voltage super-power power amplifier module can be greatly improved, miniaturization design can be achieved, and the high-voltage super-power power amplifier module has wide application prospects in the fields of space flight and aviation and the like.

Description

Technical Field

[0001] The utility model relates to the technical field of microwave power devices, in particular to a three-dimensional stacked high-voltage ultra-high-power amplifier module. Background Art

[0002] GaN HEMT power devices have the advantages of high operating frequency, high power density, high breakdown voltage, and high efficiency. They have become ideal devices for microwave high-power device applications. As a new generation of solid-state microwave power devices, GaN HEMT microwave power devices have received special attention and key development since their introduction. In recent years, GaN HEMT product technology has become more and more mature and has achieved great development. The performance of its products has been continuously improved, especially the operating voltage has been getting higher and higher, and the output power has been getting higher and higher. At present, the operating voltage of GaN-based high-power device products at home and abroad has reached more than 100V, and the output power has reached several kilowatts. The higher and higher operating voltage of GaN HEMT power devices brings challenges to the design of ultra-high power amplifier modules.

[0003] The operating voltage of the ultra-high power devices currently in use is getting higher and higher, reaching hundreds of volts, and the operating current is also getting larger and larger, with the maximum reaching hundreds of amperes. If the power control part and the RF part are integrated and interconnected on a plane through metal wires, when the RF high-power device works in a fast pulse modulation state, the parasitic inductance generated by the interconnected metal wires will cause the RF power amplifier to generate a high overshoot voltage during operation, which is prone to voltage breakdown, resulting in a reduction in the overall reliability of the ultra-high power amplifier module; and the increase in parasitic inductance caused by the excessive length of the metal wire will also cause the rise of the modulation working voltage to slow down, resulting in low efficiency when the ultra-high power module is working. On the other hand, integrating the power modulation part and the RF power part on a plane will result in a larger size of the entire module, especially in phased array system applications, which will result in excessively large unit spacing, thus affecting performance; therefore, there is an urgent need to reduce the structural size of the ultra-high power module. Utility Model Content

[0004] Purpose of the utility model: The purpose of the utility model is to provide a three-stacked high-voltage ultra-high-power amplifier module with sophisticated structural design and weak feeding parasitic inductance.

[0005] Technical solution: The utility model discloses a three-dimensional stacked high-voltage ultra-high-power amplifier module, which includes a power control module, a radio frequency power module and a plurality of metal columns. One end of the metal column is connected to the power control module, and the other end is connected to the feeding position of the radio frequency power module. The power control and the radio frequency power module are vertically electrically connected through the metal column.

[0006] The electrical interconnection achieved by the metal column can effectively reduce the parasitic inductance between the output port of the power module and the power supply port of the RF power amplifier module. When the high-voltage power supply is applied, the overshoot voltage caused by the parasitic inductance when the RF high-power device is turned on or off can be greatly reduced, thereby greatly improving the reliability of the high-voltage and high-power power amplifier module, and also realizing the miniaturization design of the power amplifier module.

[0007] Furthermore, the radio frequency power module includes a feed bias circuit, high-power devices, and resistors and capacitors.

[0008] Furthermore, the power control module includes a voltage conversion module, a gate voltage stabilization module, a pulse modulation module and a filtering energy storage module.

[0009] Furthermore, the power control module also includes a PCB substrate, a power switch device, a driver chip, a capacitor, and an inductor. The RF power module also includes a module housing. The module housing is equipped with a plurality of metal support columns, and the power control module is installed on the metal support columns.

[0010] Furthermore, the power control module is integrally mounted on the metal support column by screws.

[0011] Furthermore, the power control module is arranged opposite to the RF power module, and can be placed directly above the RF module, or at the back of the RF module or at other locations.

[0012] Furthermore, the three-dimensional stacked high-voltage ultra-high-power amplifier module has at least two layers, the RF power module is arranged on the bottom layer, and other functional modules are arranged on other layers. It can be two layers, or three layers or more, wherein the bottom layer is a high-power RF device, and the middle layer and the layers above it are power control modules or other functional modules.

[0013] Furthermore, the radio frequency power module is a single-stage high-power radio frequency device or a multi-stage high-power transmission link.

[0014] Furthermore, the length of the metal column is 10-15 mm and the diameter is 3 mm.

[0015] Furthermore, the functions included in the power control module include not only the necessary pulse voltage modulation function, but also various control functions such as voltage conversion, voltage stabilization, and timing protection.

[0016] Furthermore, the three-dimensional stacking structure can be applied to ultra-high power amplifier modules as well as ultra-high power transmitting modules or components.

[0017] Design principle: The length of the metal column used in the utility model is as short as possible to effectively reduce the parasitic inductance between the output port of the power module and the power supply port of the RF power amplifier module. When the RF power device works in a fast pulse modulation state, the overshoot voltage can be greatly reduced, thereby greatly improving the reliability of the ultra-high power amplifier module; at the same time, since the ultra-high power module based on the three-dimensional stacked structure has a high degree of integration and a small size, when it is used in a phased array system, it can fully meet the spacing requirements between transmitting units.

[0018] Beneficial effects: Compared with the prior art, the utility model has the following advantages: the utility model adopts a three-dimensional stacked structure design, the power control module is partially installed above the radio frequency module, and a short metal column is introduced downward to realize electrical interconnection. The parasitic inductance introduced by this feeding method can be minimized, so the overshoot voltage generated by the high-power device in the fast modulation working state is minimized, thereby greatly improving the reliability of the ultra-high power amplifier module; at the same time, the parasitic inductance becomes smaller, and the rising edge of the control electrical signal of the ultra-high power amplifier module will also become faster, thereby meeting the extreme feeding requirements of the ultra-high power module, and the solution can also realize the integrated and miniaturized design of the ultra-high power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is the overall assembly diagram of the utility model;

[0020] Figure 2 This is a schematic diagram of module connection of the utility model. DETAILED DESCRIPTION

[0021] The technical solution of the utility model is further described below in conjunction with the accompanying drawings. A three-dimensional stacked high-voltage ultra-high-power amplifier module of the utility model includes a power control module, a radio frequency power module and a plurality of metal pillars 10, the radio frequency power module feed includes a bias circuit 1, a high-power device 2, a resistor and a capacitor, and a module housing 7, the power control module includes a voltage conversion module 3, a gate voltage regulator module 4, a pulse modulation module 5, a filter energy storage module 6, a PCB substrate, a power switch device, a driver chip, a capacitor, and an inductor. By installing a plurality of metal support pillars 8 on the radio frequency module housing 7, and then installing the power control module part as a whole on the metal support pillars through screws 9, the whole is slightly higher than the radio frequency module part. At each feeding position of the RF module, the power control module introduces a metal column 10 downward to interconnect with the metal column 10 to realize power supply to the high-power device. The metal column 10 used has the characteristics of large diameter and short length. Therefore, the parasitic inductance introduced at each feeding position of the ultra-high power amplifier module is very small, and the rising edge of the modulation signal is fast. When the high-power device is turned on or off, the overshoot voltage caused by the parasitic inductance can be greatly reduced, thereby realizing long-term stable operation of the ultra-high power amplifier module. In some embodiments, the length of the metal column is 10-15mm and the diameter is 3mm.

[0022] The ultra-high power amplifier module of this embodiment adopts a three-dimensional stacked structural design, with the power control module part installed above the radio frequency module, and a short metal column is introduced downward to achieve electrical interconnection. The parasitic inductance introduced by this feeding method can be minimized, so the overshoot voltage generated by the high-power device in the fast modulation working state is minimized, thereby greatly improving the reliability of the ultra-high power amplifier module; at the same time, the parasitic inductance becomes smaller, and the rising edge of the control electrical signal of the ultra-high power amplifier module will also become faster, thereby meeting the extreme feeding requirements of the ultra-high power module, and this solution can also realize the integrated and miniaturized design of the ultra-high power module.

[0023] The above-described embodiments are intended to facilitate understanding of the present disclosure and are not intended to limit the interpretation of the present disclosure. The present disclosure can be changed or improved without departing from its main purpose, and its equivalents are also included in the present disclosure. That is, as long as the technical personnel in the field appropriately design and change the embodiments to obtain the features of the present disclosure, they are also included in the scope of the present disclosure. The elements and their configurations, etc., provided in the embodiments are not limited to the illustrated cases and can be appropriately changed.

Claims

1. A three-dimensional stacked high-voltage ultra-high-power amplifier module, comprising a power control module and a radio frequency power module, characterized in that: It also includes a plurality of metal columns (10), one end of the metal column (10) is connected to the power control module, and the other end is connected to the feeding position of the radio frequency power module, and the power control and the radio frequency power module are vertically electrically connected through the metal column (10).

2. A three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 1, characterized in that: The radio frequency power module comprises an electrical bias circuit (1), a high power device (2) and a resistor and a capacitor.

3. The three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 1, characterized in that: The power supply control module comprises a voltage conversion module (3), a gate voltage stabilization module (4), a pulse modulation module (5) and a filtering energy storage module (6).

4. The three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 2, characterized in that: The power control module further comprises a PCB substrate, a power switch device, a drive chip, a capacitor, and an inductor. The radio frequency power module further comprises a module housing (7). The module housing (7) is provided with a plurality of metal support columns (8), and the power control module is mounted on the metal support columns (8).

5. The three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 3, characterized in that: The power control module is integrally mounted on the metal support column (8) by means of screws (9).

6. The three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 1, characterized in that: The power control module is arranged opposite to the radio frequency power module.

7. The three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 1, characterized in that: The three-dimensional stacked high-voltage ultra-high-power amplifier module has at least two layers, the radio frequency power module is arranged on the bottom layer, and other functional modules are arranged on other layers.

8. The three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 2, characterized in that: The radio frequency power module is a single-stage high-power radio frequency device or a multi-stage high-power transmission link.

9. The three-dimensional stacked high-voltage ultra-high-power amplifier module according to claim 1, characterized in that: The metal column (10) has a length of 10-15 mm and a diameter of 3 mm.

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