Chip-scale LED packaging element

Abstract

The utility model discloses a chip-level LED packaging element, which comprises an inverted LED chip. The wavelength conversion layer covers the upper surface of the LED chip; the first reflecting layer is arranged on the periphery of the side wall of the LED chip in a surrounding manner, and an electrode of the LED chip is exposed out of the first reflecting layer; the light transmitting layer is arranged above the wavelength conversion layer and the first reflecting layer; and the light shielding layer is arranged above the light transmitting layer. The light distribution angle of the chip-scale packaging element provided by the utility model reaches 180 degrees, the relative light intensity is not less than 50%, large-angle light emission is performed while chip-scale packaging is realized, central bright spots are avoided, and the light emission intensity of the periphery is enhanced.

Description

Technical Field

[0001] The utility model relates to the technical field of LED packaging, in particular to a chip-level LED packaging component. Background Art

[0002] Light emitting diodes (LEDs) are semiconductor lighting devices that have many advantages over conventional lighting devices. For example, LEDs have a longer service life, are compact, consume less power, and are free of mercury pollution. Therefore, LEDs are frequently used as new lighting devices and backlight products instead of conventional lighting devices.

[0003] Among the existing packaging structures of light-emitting diodes, some packaging structures directly set a reflective layer on the side of the chip, such as Chinese patent CN202110965678.3, patent name: New micro-LED packaging structure and packaging method thereof. This packaging structure can only realize single-sided light emission of the chip, and the light emission angle is about 110~120°. When applied to backlight source display devices, if the uniformity of module light emission is achieved, the spacing between LEDs will inevitably be reduced, which increases the cost of the device. In addition, the light conversion layer is exposed to the air, so KSF phosphors that are easily susceptible to moisture cannot be used, and only conventional non-fluoride phosphors can be used, resulting in the inability to achieve a high color gamut of the device; or the light emission angle of the LED is expanded to about 170° by installing a lens, but it still cannot meet the requirements for 180° and near 180° light emission angles in vehicle-mounted backlight or lighting applications. Utility Model Content

[0004] The purpose of the utility model is to provide a chip-level LED packaging component, which can increase the light output angle of the chip, reduce the number of LED particles used in backlight applications, reduce costs, protect the wavelength conversion layer, and achieve a high color gamut of the device.

[0005] To achieve the above object, the utility model provides a chip-level LED packaging component, comprising:

[0006] A flip-chip LED chip having an upper surface, a lower surface disposed opposite to the upper surface, and a side wall connecting the upper surface and the lower surface, wherein at least two electrodes with different polarities are disposed at the lower portion of the lower surface;

[0007] The wavelength conversion layer at least covers the upper surface of the LED chip; the first reflective layer at least covers the side wall of the LED chip and exposes at least a portion of the electrode; the light-transmitting layer is arranged on the wavelength conversion layer; and the light-shielding layer is arranged on the light-transmitting layer.

[0008] Furthermore, the relative light intensity of the packaging component is the smallest in the central area.

[0009] Furthermore, the bottom surface of the light-transmitting layer at least covers the top surface of the wavelength conversion layer, the top surface and / or the side surface of the first reflective layer, and the bottom surface of the light-shielding layer covers the top surface of the light-transmitting layer.

[0010] Furthermore, the width of the wavelength conversion layer is greater than the width of the LED chip, and the width difference is 20-50 um.

[0011] Furthermore, the packaging element further includes a second reflective layer, which is disposed on the bottom surface of the light-transmitting layer and surrounds the side surfaces of the first reflective layer.

[0012] Furthermore, the side surface of the wavelength conversion layer is flush with the side surface of the second reflective layer and the side surface of the light-transmitting layer.

[0013] Furthermore, the thickness of the second reflective layer is H1, the thickness of the wavelength conversion layer is H4, the height of the LED chip is H2, and H2+H4≥H1≥0.

[0014] Furthermore, the shading layer is made of transparent silica gel, the transparent silica gel is doped with reflective particles, and the doping concentration of the reflective particles is 20% to 50%.

[0015] Furthermore, the vertical distance between the top surface of the wavelength conversion layer and the bottom surface of the light shielding layer is D1, 1000um>D1>100um;

[0016] Preferably, 500um≥D1≥300um.

[0017] Furthermore, the thickness of the light shielding layer is H3, 1000um>H3>10um.

[0018] Furthermore, in the horizontal projection direction, the ratio of the projection area of ​​the light shielding layer to the projection area of ​​the LED chip is not greater than 1.2.

[0019] Furthermore, a bowl-cup structure is provided between the first reflective layer and the LED chip, and the bowl-cup structure covers the side walls around the LED chip.

[0020] A further improvement of the present invention is that the width of the wavelength conversion layer is greater than the width of the LED chip, the first reflective layer covers the sides and part of the bottom of the LED chip and the sides of the wavelength conversion layer, and the top surface of the first reflective layer is flush with the top surface of the wavelength conversion layer.

[0021] A further improvement of the utility model is that the width of the wavelength conversion layer is 20-50um greater than the width of the LED chip, and the distance from the edge of the wavelength conversion layer to the outside of the first reflective layer is greater than 50um. The width of the wavelength conversion layer is greater than the width of the LED chip because it is required to be cut so that it will not be flush, and the distance from the outside of the first reflective layer is greater than 50um to protect the KSF phosphor.

[0022] A further improvement of the present invention is that it further comprises a second reflective layer, wherein the light-transmitting layer wraps a portion of the side wall of the first reflective layer, and the second reflective layer is arranged on the bottom surface of the light-transmitting layer and surrounds the first reflective layer.

[0023] A further improvement of the utility model is that the width of the wavelength conversion layer is greater than the width of the LED chip, the top surface of the first reflective layer is flush with the top surface of the LED chip, the wavelength conversion layer covers the top surface of the LED chip and the top surface of the first reflective layer; the light-transmitting layer wraps the entire top surface and side walls of the wavelength conversion layer.

[0024] A further improvement of the present invention is that it further comprises a second reflective layer, wherein the light-transmitting layer wraps a portion of the side wall of the first reflective layer, and the second reflective layer is arranged on the bottom surface of the light-transmitting layer and surrounds the first reflective layer.

[0025] A further improvement of the utility model is that the width of the wavelength conversion layer is greater than the width of the LED chip, the wavelength conversion layer covers the top surface of the LED chip and wraps part of the side surface of the LED chip, the light-transmitting layer wraps the entire top surface and side surfaces of the wavelength conversion layer, and the top surface of the first reflective layer is flush with the bottom surface of the light-transmitting layer.

[0026] A further improvement of the present invention is that the side surface of the first reflective layer is flush with the side surface of the wavelength conversion layer, the side surface of the first reflective layer is surrounded by a second reflective layer, and the side surface of the second reflective layer is flush with the side surface of the light-transmitting layer.

[0027] A further improvement of the present invention is that the reflective particles are TiO2 and / or SiO2.

[0028] A further improvement of the utility model is that the reflective particles are TiO2 and SiO2, the mass fraction of TiO2 in the shading layer is 10-50%, preferably 20%-30%, and the mass fraction of SiO2 is 0-150%, preferably 30%-60%.

[0029] A further improvement of the present invention is that the distance between the top surface of the wavelength conversion layer and the bottom surface of the light shielding layer is D1, 1000um>D1>100um.

[0030] A further improvement of the utility model is that the thickness of the light shielding layer is H3, 1000um>H3>10um, preferably 200~400um. The thickness H3 of the light shielding layer is designed according to the overall height of the device and the light type requirements. By adjusting the thickness of the light shielding layer and the doping concentration, the "M" type luminous morphology can be achieved, the central light intensity can be reduced, and the visual effect can be improved; by changing the thickness of the light shielding layer and the solubility of the doped particles, the relative intensity of the central light intensity can be changed, thereby adapting to the requirements of different application end designs (finished product thickness requirements OD requirements / product arrangement pich requirements, etc.), and achieving a good visual effect.

[0031] A further improvement of the present invention is that the distance between the outer wall of the light-transmitting layer and the outer wall of the first reflective layer is D2, and D2>50um. If D2 is too thin, the protection effect of the side wall of the wavelength conversion layer will be poor, and moisture will easily penetrate and cause KSF failure.

[0032] A further improvement of the present invention is that the first reflective layer and the second reflective layer are made of highly reflective white glue.

[0033] A further improvement of the utility model is that the LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, and a second semiconductor layer arranged in sequence from top to bottom, and the electrode includes a first electrode arranged on the lower end surface of the second semiconductor layer and electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer.

[0034] A further improvement of the present invention is that the bottom surface of the first reflective layer is flush with the bottom surface of the electrode and exposes the electrode, and the first reflective layer is an insulating reflective layer.

[0035] The beneficial effects of the utility model are:

[0036] The utility model sets a light-transmitting layer and a light-shielding layer on the wavelength conversion layer, so that the LED chip emits more light from the side, which can increase the light emission angle of the chip and improve the light emission effect of the packaging structure. The light-shielding layer mainly reflects and blocks the transmission of the front light. The intensity of the side light is higher than that of the front light, and the light emission angle is large, which can effectively reduce the number of LED particles used in backlight applications and reduce costs.

[0037] The existing LED has the problem that the brightness of the front area is higher than that of the side area, resulting in the presence of visual "bright spots". The utility model adjusts the light type of the package by adjusting the thickness and position of the light-transmitting layer and the light-shielding layer, the concentration of reflective particles in the light-shielding layer, etc., so that the light intensity of the package gradually increases and then decreases from the central area to the surrounding area, thereby eliminating the visual "bright spots".

[0038] Compared with the prior art that exposes the wavelength conversion layer, the utility model completely wraps the phosphor inside the package by setting a light-transmitting layer, which can effectively isolate water vapor and achieve high reliability, and then use the KSF phosphor film that is easily affected by moisture to achieve a high color gamut. The high color gamut is achieved by exciting the KSF phosphor film. Without using a QD film, a high color gamut (NTSC>85%) of the backlight product is achieved.

[0039] In the utility model, the reflection efficiency of the side light of the LED chip is improved by the bowl-cup structure, the light emitted from the side of the LED chip is effectively utilized, the light output rate of the LED chip is improved, and the light output angle is further improved.

[0040] The utility model arranges a reflective layer made of high-reflective white glue at the bottom of the LED chip, which can improve the brightness.

[0041] In the utility model, the KSF powder wavelength conversion layer is above the LED chip, and is mainly used for the LED to excite the required white light; and is wrapped between the high-reflection white glue and the light-transmitting layer, so as to protect the KSF phosphor and prevent the product from failing due to moisture.

[0042] In the utility model, a high-reflective white glue layer can be arranged around the entire structure, wrapping the KSF powder wavelength conversion layer / transparent silicone anti-color cavity / LED chip and LED electrode gap, and the top surface is flush with the top surface of the KSF powder wavelength conversion layer, mainly playing a structural support role and reflecting the LED side light, protecting the side of the KSF powder wavelength conversion layer.

[0043] In the utility model, the light-transmitting layer is above the wavelength conversion layer and the first reflection layer, and plays the role of transmitting light and protecting the KSF wavelength conversion layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 This is a schematic structural diagram of Example 1 of the utility model.

[0045] Figure 2 This is a structural schematic diagram of a modified implementation of Example 1 of the utility model;

[0046] Figure 3 This is a structural schematic diagram of another variant implementation of Example 1 of the utility model;

[0047] Figure 4 This is a schematic diagram of the structure of Example 2 of the present utility model;

[0048] Figure 5 This is a schematic diagram of the structure of Embodiment 3 of the present utility model;

[0049] Figure 6 This is a schematic diagram of the structure of Embodiment 4 of the present utility model;

[0050] Figure 7 This is a schematic diagram of the structure of Example 5 of the present utility model;

[0051] Figure 8 This is a schematic diagram of the structure of Example 6 of the present utility model;

[0052] Figure 9a is a light distribution curve diagram of absolute luminous intensity of Example 1 of the utility model;

[0053] Figure 9b The light distribution curve diagram of the relative luminous intensity of Example 1 of the utility model;

[0054] Fig.10a , Fig.10b , Fig.10c , Fig.10d This is a light distribution curve diagram of Experimental Example 1 of the present utility model;

[0055] Fig.11a , Fig.11b , Fig.11c , Fig.11d This is the light distribution curve diagram of Experimental Example 2 of the present utility model.

[0056] In the figure, 1-wavelength conversion layer, 2-LED chip, 3-first reflection layer, 4-electrode, 5-light-transmitting layer, 6-light-shielding layer, 7-second reflection layer, 8-bowl-cup structure. DETAILED DESCRIPTION

[0057] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present disclosure more clearly understood, the present disclosure is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure and are not used to limit the present disclosure.

[0058] It should be noted that when a component is referred to as being "fixed on" or "disposed on" another component, it may be directly or indirectly located on the other component. When a component is referred to as being "connected to" another component, it may be directly or indirectly connected to the other component. The orientation or position indicated by the terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inside", "outside", "side", etc. is based on the orientation or position shown in the accompanying drawings and is only for the convenience of description and cannot be understood as a limitation on the present technical solution. The terms "first" and "second" are only used for the convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0059] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. Example 1

[0060] Combination Figure 1 It can be seen that a chip-level LED packaging component includes: a flip-chip LED chip 2, having an upper surface, a lower surface arranged opposite to the upper surface, and a side wall connecting the upper surface and the lower surface, wherein at least two electrodes 4 with different polarities are arranged at the lower part of the lower surface;

[0061] A wavelength conversion layer 1, covering at least the upper surface of the LED chip 2;

[0062] A first reflective layer 3 at least covers the side wall of the LED chip 2 and exposes at least a portion of the electrode 4;

[0063] A light-transmitting layer 5, disposed on the wavelength conversion layer 1;

[0064] A light shielding layer 6, disposed on the light-transmitting layer 5;

[0065] The light distribution angle of the packaging component is 180°, and the relative light intensity is ≥50%.

[0066] The relative light intensity distribution curve of the packaging component is in an "M" shape. That is, the light distribution curve of the packaging component is in an "M" shape.

[0067] The strongest light intensity of the packaging component is located between -90° and -75°, and between 90° and 75° on the relative light intensity distribution curve.

[0068] Preferably, in the horizontal projection direction, the ratio of the projection area of ​​the light shielding layer 6 to the projection area of ​​the LED chip is not greater than 1.2.

[0069] Specifically, the LED chip 2 includes a substrate, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer arranged in sequence from top to bottom, and the electrode 4 includes a first electrode arranged on the lower end surface of the second semiconductor layer and electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first electrode and the second electrode are opposite, that is, if the first electrode is a P-type electrode, the second electrode is an N-type electrode; if the first electrode is an N-type electrode, the second electrode is a P-type electrode, and the number of the first electrode and the second electrode can be one or more according to design requirements.

[0070] In this embodiment, the first electrode and the second electrode are composed of multiple layers of metal, including a Ti layer, a Cu layer, a Ni layer, and an Au layer in sequence from the end close to the LED chip to the end farthest from the LED chip, or a Cr layer, a Cu layer, a Ni layer, and an Au layer in sequence; wherein the Ti layer or the Cr layer serves as an adhesion layer with a thickness of 100Å~5000Å; the Cu layer has excellent electrical and thermal conductivity, and as the main component of the first electrode and the second electrode, its thickness is 1μm~100μm, preferably 30μm~60μm; the Au layer serves as the outermost metal layer, and its thickness is 200Å~5000Å, preferably 650Å~950Å; the Ni layer is arranged between the Cu layer and the Au layer, and its thickness is 1μm~10μm, preferably 2μm~4μm.

[0071] The bottom surface of the light-transmitting layer 5 at least covers the top surface of the wavelength conversion layer 1 and the top surface and / or side surface of the first reflective layer 3 , and the bottom surface of the light-shielding layer 6 covers the top surface of the light-transmitting layer 5 .

[0072] The width of the wavelength conversion layer 1 is not less than the width of the LED chip 2 , the first reflective layer 3 covers the sides and part of the bottom of the LED chip 2 and the sides of the wavelength conversion layer 1 , and the top surface of the first reflective layer 3 is flush with the top surface of the wavelength conversion layer 1 .

[0073] Preferably, the width of the wavelength conversion layer 1 is greater than that of the LED chip 2 , the width difference is 20-50 um, and the distance from the edge of the wavelength conversion layer 1 to the outside of the first reflective layer 3 is greater than 50 um, and the first reflective layer 3 covers the sides and part of the bottom of the wavelength conversion layer 1 .

[0074] The wavelength conversion layer 1 can be formed by first mixing a dopant with a colloid to form a precursor, and then by a film forming process. The dopant is a phosphor, including one or more of KSF powder, nitride phosphor, silicate phosphor, chlorate phosphor, YAG phosphor, and sulfide phosphor. The light emitted by the LED chip can be blue, green or red. The light emitted by the LED chip is converted in wavelength after passing through the fluorescent film to emit light of another color. In this embodiment, since the required LED package is white light, but the light emitted by the LED chip 2 is blue light, the required fluorescent film needs to convert the blue light into white light.

[0075] Furthermore, the distance between the top surface of the wavelength conversion layer 1 and the bottom surface of the light shielding layer 6 is D1, 1000um≥D1≥100um. Preferably, 500um≥D1≥300um. The smaller D1 is, the easier it is to achieve large-angle light emission. However, when D1 is too small, light is easily reflected back and forth between the light shielding layer 6 and the wavelength conversion layer 1, and the brightness is small after light loss. If D1 is too large, it will affect the height of the entire device and is not suitable for application.

[0076] The light shielding layer 6 is made of transparent silica gel, and the transparent silica gel is doped with reflective particles. The reflective particles can be TiO2 or SiO2. The reflective particles can also be co-doped with TiO2 and SiO2. When the reflective particles are TiO2 and SiO2, the mass fraction of TiO2 in the light shielding layer is 10-50%, preferably 20%-30%, and the mass fraction of SiO2 is 0-150%, preferably 30%-60%.

[0077] The light-transmitting layer 5 can be pure transparent silica gel, or fluorescent glue doped with fluorescent powder. The distance between the outer wall of the light-transmitting layer 5 and the outer wall of the first reflective layer 3 is D2, preferably 300um>D2>50um. If D2 is too thin, the protection effect of the side wall of the wavelength conversion layer 1 will be poor, and moisture will easily penetrate and cause the KSF fluorescent powder to fail. If D2 is too thick, the side light intensity will be reduced. And the size is too large and not suitable for application. The light-transmitting layer 5 can be pure transparent silica gel or fluorescent glue doped with fluorescent powder.

[0078] The bottom surface of the first reflective layer 3 is flush with the bottom surface of the electrode 4 and exposes the lower surface of the electrode 4. The first reflective layer 3 is an insulating reflective layer. In addition to reflecting the lateral light emitted by the LED chip, it also protects the chip. In this embodiment, the reflectivity of the first reflective layer 3 is greater than 90%, and the material is transparent silica gel doped with reflective particles, that is, high-reflective white glue. The reflective particles can be insulating particles, such as TiO2, SiO2, SiN, etc., or metal particles, such as Al particles, Ag particles, Cu particles, etc. In another embodiment, the first reflective layer can also be a DBR reflective layer.

[0079] Figure 9a The absolute luminous intensity distribution curve of the package of this embodiment is shown in FIG. Figure 9b The light distribution curve of the relative luminous intensity of the package of this embodiment is shown, wherein the light distribution curve refers to the distribution of the light intensity of the light source or lamp in all directions in space; the luminous intensity refers to the luminous flux per unit solid angle, and the unit is candela (cd); the relative luminous intensity refers to the ratio of the absolute luminous intensity to the standard luminous intensity, which can better show the uniformity of light output at different angles.

[0080] The package provided in this embodiment realizes light emission from the top surface and the surrounding sides of the package, that is, "five-sided light emission" through the setting of the first reflective layer, the shading layer, and the light-transmitting layer. At the same time, the light intensity in the central area of ​​the package is reduced by adjusting the thickness of the shading layer and the doping concentration of the reflective particles, so that the light type of the package in this embodiment gradually increases and then decreases from the central area (referring to the light distribution angle of 0° or close to 0°) to the surrounding area, that is, its relative luminous intensity distribution curve is roughly "M"-shaped, the light distribution angle can reach 180°, and the relative luminous intensity of each light distribution angle is not less than 50%. At the same time, it can be seen that the strongest luminous intensity R is distributed near ±80°~85°, avoiding the appearance of "two points" in the center.

[0081] In a modified implementation of Example 1, compared with Example 1, the structures of the wavelength conversion layer 1, the first reflective layer 3 and the light-transmitting layer 5 are changed, such as Figure 3 As shown, the first reflective layer 3 covers the four sides and bottom of the LED chip 2, exposing the top surface of the LED chip 2 and the lower surface of the electrode. The edge of the wavelength conversion layer 1 can be flush with the edge of the first reflective layer 3, or slightly larger.

[0082] The width of the wavelength conversion layer 1 is greater than the width of the LED chip 2, the top surface of the first reflective layer 3 is flush with the top surface of the LED chip 2, and the wavelength conversion layer 1 covers the top surface of the LED chip 2 and the top surface of the first reflective layer 3. The light-transmitting layer 5 at least wraps the entire top surface and side surfaces of the wavelength conversion layer 1.

[0083] Preferably, the light-transmitting layer 5 covers the top surface of the wavelength conversion layer 1 and the four sides of the first reflective layer 3 , and the bottom surface of the light-transmitting layer 5 , the bottom surface of the first reflective layer 3 , and the lower surface of the electrode are flush.

[0084] This design partially increases the thickness of the light-transmitting layer 5 while keeping the distance D1 between the top surface of the wavelength conversion layer 1 and the bottom surface of the light-shielding layer 6 unchanged, so that the thickness of the edge of the light-transmitting layer 5 is equal to the height H2 of the chip 2 plus the thickness H4 of the wavelength conversion layer 1 plus the distance D1 between the top surface of the wavelength conversion layer 1 and the bottom surface of the light-shielding layer 6. The increase in the edge thickness of the light-transmitting layer 5 increases the light-emitting area on the side of the device. Example 2

[0085] This embodiment is substantially the same as the embodiment 1, except that: the width of the wavelength conversion layer 1 is greater than the width of the LED chip 2, the top surface of the first reflection layer 3 is flush with the top surface of the LED chip 2, and the wavelength conversion layer 1 covers the top surface of the LED chip 2 and the top surface of the first reflection layer 3; the light-transmitting layer 5 wraps the entire top surface and side walls of the wavelength conversion layer 1, and the structure of the light-emitting diode package is as follows: Figure 4 shown.

[0086] Preferably, the present embodiment further includes a second reflective layer 7, the light-transmitting layer 5 wraps part of the side wall of the first reflective layer 3, and the second reflective layer 7 is arranged on the bottom surface of the light-transmitting layer 5 and surrounds the first reflective layer 3. The lower surface of the second reflective layer 7, the bottom surface of the first reflective layer 3, and the lower surface of the electrode 4 are flush.

[0087] The thickness of the second reflective layer 7 is H1, the thickness of the wavelength conversion layer 1 is H4, the height of the LED chip 2 is H2, H2+H4>H1≥0, H1<D1. The thickness of the light shielding layer 6 is H3, 1000um>H3>10um, preferably 200~400um. In this embodiment, the reflectivity of the second reflective layer 7 is greater than 90%, and the material is transparent silica gel doped with reflective particles, that is, high-reflective white glue. The reflective particles can be insulating particles, such as TiO2, SiO2, SiN, etc., or metal particles, such as Al particles, Ag particles, Cu particles, etc.

[0088] The upper surface of the second reflective layer and the side wall of the first reflective layer have a function of re-reflecting the light reflected downward from the light shielding layer, and together form three-side reflective surfaces to emit the light toward the side surface of the light-transmitting layer.

[0089] Specifically, when the thickness H3 of the light shielding layer is 400um, the minimum thickness D1 of the light-transmitting layer is 350um, and the concentration of reflective particles in the light shielding layer is 30%, the light output angle is 180°, the light intensity in the central area is the lowest, and the light intensity gradually increases and then decreases from the midline area to the surrounding areas. The strongest light intensity of the package is near the light output angle of ±85°, and the light intensity at ±90° is greater than the light intensity at the center.

[0090] Apart from this, this embodiment is completely the same as Embodiment 1 and will not be described in detail here.

[0091] Compared with Example 1, this embodiment improves the first reflective layer 3 and the light-transmitting layer 5, increases the volume of the light-transmitting layer 5, increases the range of light refraction, and enhances the light extraction effect. Example 3

[0092] Combination Figure 5 It can be seen that this embodiment is substantially the same as Embodiment 2, except that: the wavelength conversion layer 1 covers the top surface of the LED chip 2, the areas of the two are close or the area of ​​the wavelength conversion layer 1 is slightly larger than the top surface area of ​​the LED chip 2, and the first reflective layer 3 covers the LED chip 2 and the surrounding sides of the wavelength conversion layer 1, as well as the bottom surface of the LED chip 2. The thickness H1 of the second reflective layer 7 is less than the chip height H2.

[0093] Specifically, when the thickness H3 of the shading layer is 100um, the minimum thickness D1 of the light-transmitting layer is 350um, and the concentration of reflective particles in the shading layer is 30%, the light output angle is still 180°, and the light intensity gradually increases and then decreases from the midline area to the surrounding areas, but the light intensity in the central area is increased compared with Example 2, and the central area is not the lowest light intensity point, and the lowest light intensity point is approximately at ±90°.

[0094] Apart from this, this embodiment is exactly the same as Embodiment 2 and will not be described in detail here. Example 4

[0095] This embodiment is substantially the same as Embodiment 2, except that: the width of the wavelength conversion layer 1 is greater than the width of the LED chip 2, the wavelength conversion layer 1 covers the top surface of the LED chip 2 and wraps part of the side surface of the LED chip 2, the light-transmitting layer 5 wraps the entire top surface and side surface of the wavelength conversion layer 1, and the top surface of the first reflective layer 3 is flush with the bottom surface of the light-transmitting layer 5 and the bottom of the side surface of the wavelength conversion layer 1. The structure of the light-emitting diode package is as follows: Figure 6 shown.

[0096] The side surface of the first reflective layer 3 is flush with the side surface of the wavelength conversion layer 1 . The side surface of the first reflective layer 3 is surrounded by a second reflective layer 7 . The side surface of the second reflective layer 7 is flush with the side surface of the light-transmitting layer 5 .

[0097] Optionally, the bottom surface of the light-transmitting layer 5 is flush with the bottom of the side surface of the wavelength conversion layer 1 .

[0098] Optionally, the bottom surface of the light-transmitting layer 5 is not flush with the bottom of the side surface of the wavelength conversion layer 1 .

[0099] The thickness of the second reflective layer 7 is H1, which is the same as the thickness of the first reflective layer, or the first reflective layer and the second reflective layer are integrally formed. Both are highly reflective white glue with a reflectivity greater than 98%. Furthermore, the thickness of the first reflective layer needs to be greater than the thickness of the electrode, that is, the first reflective layer and / or the second reflective layer must cover the side wall and bottom surface of the electrode.

[0100] Apart from this, this embodiment is completely the same as Embodiment 1 and will not be described in detail here.

[0101] Compared with Example 1, this embodiment improves the wavelength conversion layer 1, the light-transmitting layer 5, and the first reflective layer 3, thereby increasing the area covered by the wavelength conversion layer 1 on the LED chip 2, and being able to effectively utilize the side light of the chip. Example 5

[0102] Figure 7A package provided is substantially the same as Embodiment 1, except that a bowl-cup structure 8 is provided between the first reflective layer 3 and the LED chip 2, and the bowl-cup structure 8 covers part of the surrounding sides of the LED chip 2. The bowl-cup structure is a transparent reflective cavity, preferably made of transparent silicone.

[0103] Apart from this, this embodiment is completely the same as Embodiment 1 and will not be described in detail here.

[0104] Compared with Example 1, this embodiment improves the reflection efficiency of the side light of the LED chip by setting a bowl-cup structure, effectively utilizes the light emitted from the side of the LED chip, improves the light output rate of the LED chip, and further improves the light output angle. Example 6

[0105] Figure 8 A package provided is substantially the same as Embodiment 2, except that a bowl-cup structure 8 is provided between the first reflective layer 3 and the LED chip 2, and the bowl-cup structure 8 covers the side walls of the LED chip 2. The bowl-cup structure is a transparent reflective cavity, preferably made of transparent silicone.

[0106] Apart from this, this embodiment is exactly the same as Embodiment 2 and will not be described in detail here.

[0107] Compared with Example 2, this embodiment improves the reflection efficiency of the side light of the LED chip by setting a bowl-cup structure, effectively utilizes the light emitted from the side of the LED chip, improves the light output rate of the LED chip, and further improves the light output angle.

[0108] Experimental Example 1:

[0109] The experimental example is based on the example 1. Figure 1 Taking the package component structure described above as an example, the thickness of the light-shielding layer, the thickness of the light-transmitting layer, and the concentration of the reflective particles in the light-shielding layer are adjusted to verify the luminous angle and luminous intensity distribution of the package component. Specifically, Experimental Example 1 keeps the thickness of the light-transmitting layer and the doping concentration of the reflective particles in the light-shielding layer unchanged, such as the thickness of the light-transmitting layer is 300um, and the doping concentration of the reflective particles is 30%, to verify the light distribution angle and light intensity of the package components with different thicknesses.

[0110] Table 1: Light distribution area and relative light intensity of the central area corresponding to different thickness of shading layer

[0111]

[0112] Combined with Table 1 and Appendix Fig.10a , 10b, 10c, and 10d, it can be seen that the light distribution curves of the four packaging components provided in Experimental Example 1 are all "M"-shaped, that is, the luminous intensity of the packaging components gradually increases from the central area to the surrounding areas and weakens when approaching the edge area. At the same time, it can be seen from the light distribution curve that the relative luminous intensity of the four packaging components within the light output angle range of 180° is greater than 50%, and the relative luminous intensity is 100% or close to 100% when the light distribution angle is between -90° and -75°, and between 90° and 75°, and as the thickness of the shading layer increases, the relative luminous intensity of the central area gradually decreases. This type of packaging component is particularly suitable for vehicle-mounted lighting applications. While ensuring the uniformity of light output within the 180° angle range, it avoids the strong radiation of forward light, but increases the intensity of lateral light, reduces the blind spot of night driving, and avoids the impact of strong light on other vehicles when meeting.

[0113] Experimental Example 2:

[0114] The difference between Experimental Example 2 and Experimental Example 1 is that in Experimental Example 2, the thickness of the light-transmitting layer and the thickness of the light-shielding layer remain unchanged, and the effect of the doping concentration of different reflective particles in the light-shielding layer on the light distribution angle and light output intensity of the packaged component is verified.

[0115] Table 2: Relative light intensity in the light distribution area and the center area corresponding to the doping concentration of reflective particles

[0116]

[0117] In the description of the present utility model, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inside", "outside", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present utility model. Any equivalent structure or equivalent process transformation made using the contents of the utility model specification and the accompanying drawings, or directly or indirectly used in other related technical fields, are similarly included in the patent protection scope of the present utility model.

Claims

1. A chip-level LED packaging component, comprising: A flip-chip LED chip (2) comprising an upper surface, a lower surface arranged opposite to the upper surface, and a side wall connecting the upper surface and the lower surface, wherein at least two electrodes (4) with different polarities are arranged at the lower portion of the lower surface; It is characterized in that A wavelength conversion layer (1), at least covering the upper surface of the LED chip (2); A first reflective layer (3) at least covers the side wall of the LED chip (2) and exposes at least a portion of the electrode (4); A light-transmitting layer (5) disposed on the wavelength conversion layer (1); A light shielding layer (6) is arranged on the light-transmitting layer (5); The bottom surface of the light-transmitting layer (5) at least covers the top surface of the wavelength conversion layer (1) and the top surface and / or side surfaces of the first reflective layer (3).

2. The chip-level LED packaging component according to claim 1, characterized in that: The relative light intensity of the package component is the smallest in the central area.

3. The chip-scale LED packaging component according to claim 1, characterized in that: The bottom surface of the light-shielding layer (6) covers the top surface of the light-transmitting layer (5).

4. A chip-level LED packaging component according to claim 3, characterized in that: The width of the wavelength conversion layer (1) is greater than the width of the LED chip (2), and the width difference is 20-50 um.

5. The chip-level LED packaging component according to claim 3, characterized in that: It also comprises a second reflective layer (7), which is arranged on the bottom surface of the light-transmitting layer (5) and surrounds the side surfaces of the first reflective layer (3).

6. The chip-level LED packaging component according to claim 5, characterized in that: The side surface of the wavelength conversion layer (1) is flush with the side surface of the second reflective layer (7) and the side surface of the light-transmitting layer (5).

7. The chip-level LED packaging component according to claim 5, characterized in that: The thickness of the second reflective layer (7) is H1, the thickness of the wavelength conversion layer (1) is H4, the height of the LED chip (2) is H2, and H2+H4≥H1≥0.

8. The chip-level LED packaging component according to claim 1, characterized in that: The vertical distance between the top surface of the wavelength conversion layer (1) and the bottom surface of the light shielding layer (6) is D1, 1000um>D1>100um; And / or, the thickness of the light shielding layer (6) is H3, 1000um>H3>10um.

9. The chip-level LED packaging component according to claim 1, characterized in that: In the horizontal projection direction, the ratio of the projection area of ​​the light shielding layer (6) to the projection area of ​​the LED chip (2) is not greater than 1.

2.

10. The chip-level LED packaging component according to claim 1, characterized in that: A bowl-cup structure (8) is provided between the first reflective layer (3) and the LED chip (2), and the bowl-cup structure (8) covers the side walls around the LED chip (2).

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