Capacitor structure of high-voltage capacitor and voltage measuring equipment

Abstract

The utility model relates to the technical field of capacitors, in particular to a capacitor structure of a high-voltage capacitor and voltage measuring equipment, and the high-voltage capacitor is used for being connected with a low-voltage capacitor in series to form the voltage measuring equipment of a power grid. The capacitor structure comprises a capacitor chip of an I-shaped structure and a copper pipe, wherein the capacitor chip is used for increasing the creepage distance along the surface when the basic performance of the capacitor structure is specified; the copper pipe is welded on the capacitor chip; the capacitor chip comprises a first electrode layer, a second electrode layer and a ceramic body, the ceramic body is of a hollow cylinder structure, an annular groove is formed in the outer surface of the ceramic body, the first electrode layer covers the annular groove, and the second electrode layer covers the inner surface of the hollow cylinder structure. According to the capacitor structure, the creepage distance of the capacitor chip along the surface is effectively improved, the use requirements of users are met, and the product performance is stable.

Description

Technical Field

[0001] The utility model relates to the technical field of capacitors, in particular to a capacitor structure of a high-voltage capacitor and a voltage measuring device. Background Art

[0002] At present, AC sensors are widely used as voltage measurement equipment for high-voltage and medium-voltage power grids in my country. According to different voltage requirements, a high-voltage and low-voltage capacitor series structure (high-voltage capacitor C1 and low-voltage capacitor C2) is used for voltage division, and then the signal and energy are extracted at the low-voltage end. The withstand voltage of high-voltage capacitors is one of the main performance indicators.

[0003] The current high-voltage capacitor adopts a disc-shaped structure design, with a disc-shaped chip inside and an insulating resin outside. The insulation distance of the capacitor is relatively small. In actual application, arcing often occurs along the surface of the chip inside the resin, causing capacitor failure and causing great losses. This seriously affects the realization of the normal function of the sensor and restricts the normal development of the smart grid.

[0004] Therefore, there is an urgent need for a capacitor structure of a high-voltage capacitor and a voltage measuring device. Utility Model Content

[0005] 1. Technical issues to be resolved

[0006] In view of the above-mentioned shortcomings and deficiencies of the prior art, the utility model provides a capacitor structure and a voltage measuring device for a high-voltage capacitor, which effectively improves the surface creepage distance of the capacitor chip, solves the technical problem in the prior art that the voltage failure rate of the high-voltage capacitor is high, which seriously affects the normal function of the sensor.

[0007] (II) Technical solution

[0008] In order to achieve the above-mentioned purpose, the main technical solutions adopted by the utility model include:

[0009] In a first aspect, an embodiment of the utility model provides a capacitor structure of a high-voltage capacitor, wherein the high-voltage capacitor is used to form a voltage measurement device of a power grid in series with a low-voltage capacitor, and the capacitor structure includes:

[0010] An I-shaped capacitor chip and a copper tube for improving the surface creepage distance when specifying the basic performance of the capacitor structure; the copper tube is welded on the capacitor chip;

[0011] The capacitor chip comprises:

[0012] A first electrode layer, a second electrode layer, and a ceramic body;

[0013] The ceramic body is a hollow cylindrical structure, an annular groove is provided on the outer surface of the ceramic body, the first electrode layer covers the annular groove, and the second electrode layer covers the inner surface of the hollow cylindrical structure.

[0014] Optionally, the copper tube is welded to the inner surface of the hollow cylindrical structure by soldering.

[0015] Optionally, the first electrode layer is a silver electrode layer coated on the annular groove, and the second electrode layer is a silver electrode layer coated on the inner surface of the hollow cylindrical structure;

[0016] The thickness of the first electrode layer and the second electrode layer ranges from 3 to 7 μm.

[0017] Optionally, the center of the annular groove and the center of the hollow cylindrical structure are located at the same height.

[0018] Optionally, the annular groove is a semicircular groove.

[0019] Optionally, the top surface and the side surface of the hollow cylindrical structure are connected via a rounded corner, and the bottom surface and the side surface of the hollow cylindrical structure are connected via a rounded corner.

[0020] Optionally, the capacitor structure further comprises: tinned copper wire;

[0021] The first end and the second end of the tinned copper wire are respectively arranged on the first electrode layer;

[0022] A line connecting the first end and the second end coincides with a diameter of the hollow cylindrical structure.

[0023] Optionally, the basic performance of the specified capacitor structure includes:

[0024] The capacitance of the capacitor structure is 220pF, and the dielectric withstand voltage of the capacitor structure is 10kV; the dimensions of the capacitor structure are 60mm in diameter and 53mm in height; the capacitor chip height is 32mm, the thickness is 11mm, and the creepage distance is 24.85mm.

[0025] Optionally, the creepage distance is a creepage distance from the first electrode layer to the second electrode layer;

[0026] The calculation formula of the creepage distance is:

[0027]

[0028] Where C is the creepage distance, D is the height of the capacitor chip, and d 圆角 is the diameter of the fillet, d 凹槽 is the diameter of the annular groove, d is the diameter of the capacitor structure, d内径 is the inner diameter of the capacitor’s hollow cylindrical structure.

[0029] In a second aspect, an embodiment of the utility model provides a voltage measuring device, which is used in a high-voltage power grid or a medium-high voltage power grid, and includes a capacitor structure of any of the high-voltage capacitors described above, wherein the capacitor structure of the high-voltage capacitor is connected in series with a low-voltage capacitor to form a voltage measuring device.

[0030] (III) Beneficial effects

[0031] The beneficial effects of the utility model are:

[0032] The utility model discloses a capacitor structure and voltage measuring device for a high-voltage capacitor. Due to the use of an I-shaped capacitor chip, compared with the prior art, it effectively increases the creepage distance between the two poles of the capacitor, reduces the probability of arc failure along the surface of the chip, and reduces the voltage failure rate of the capacitor. This solves the technical problem in the prior art that the voltage failure rate of the high-voltage capacitor is high, mainly manifested as surface breakdown, which seriously affects the realization of the normal function of the sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 This is a schematic diagram of the capacitor structure in Example 1 of the utility model;

[0034] Figure 2 It is a schematic diagram of the dimensions of the capacitor structure in Example 1 of the utility model;

[0035] Figure 3 This is a schematic structural diagram of an original design capacitor that does not adopt an I-shaped structure in Example 1 of the utility model.

[0036] [Description of Reference Numerals]

[0037] 1: Ceramic body; 2: Second electrode layer; 3: First electrode layer; 4: Copper tube; 5: Tinned copper wire. DETAILED DESCRIPTION

[0038] In order to better explain the present invention and facilitate understanding, the present invention is described in detail below through specific implementation modes in conjunction with the accompanying drawings.

[0039] The utility model proposes a capacitor structure and a voltage measuring device for a high-voltage capacitor. By adopting an I-shaped capacitor chip, the creepage distance between the two poles of the capacitor is increased, and the probability of arc failure along the chip surface is reduced. The user's use requirements are met and the user's use is convenient. The product performance is stable and fully meets the market demand.

[0040] In order to better understand the above technical solution, exemplary embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a clearer and more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0041] Specific embodiment description part

[0042] Example 1

[0043] See also Figure 1 The embodiment of the utility model provides a capacitor structure of a high-voltage capacitor, the high-voltage capacitor is used to form a voltage measurement device of a power grid in series with a low-voltage capacitor, and the capacitor structure includes:

[0044] The capacitor chip and copper tube 4 of the I-shaped structure used to improve the creepage distance when the basic performance of the capacitor structure is specified; the copper tube 4 is welded on the capacitor chip.

[0045] In this embodiment, the height of the copper tube 4 is 53 mm.

[0046] Capacitor chips include:

[0047] A first electrode layer 3 , a second electrode layer 2 , and a ceramic body 1 .

[0048] The ceramic body 1 is a hollow cylindrical structure. An annular groove is provided on the outer surface of the ceramic body 1. The first electrode layer 3 covers the annular groove, and the second electrode layer 2 covers the inner surface of the hollow cylindrical structure.

[0049] In this embodiment, by providing the annular groove, not only the functionality and stability of the ceramic body 1 are increased, but also the design of the annular groove can effectively prevent the ceramic body from breaking due to excessive temperature, thereby improving safety.

[0050] In this embodiment, the annular groove is a semicircular groove.

[0051] In this embodiment, by setting the annular groove as a semicircular groove, the complexity and error in the manufacturing process can be reduced.

[0052] In this embodiment, the diameter of the annular groove is 10 mm.

[0053] In this embodiment, the copper tube 4 is welded to the inner surface of the hollow cylindrical structure by soldering.

[0054] In this embodiment, the first electrode layer 3 is a silver electrode layer coated on the annular groove, and the second electrode layer 2 is a silver electrode layer coated on the inner surface of the hollow cylindrical structure.

[0055] In this embodiment, by setting the first electrode layer 3 and the second electrode layer 2 as silver electrode layers, they have better electrical conductivity and higher chemical stability.

[0056] The thickness of the first electrode layer 3 and the second electrode layer 2 is in the range of 3 to 7 μm.

[0057] In this embodiment, the center of the annular groove and the center of the hollow cylindrical structure are located at the same height.

[0058] In this embodiment, the top surface and the side surface of the hollow cylindrical structure are connected through rounded corners, and the bottom surface and the side surface of the hollow cylindrical structure are connected through rounded corners.

[0059] In this embodiment, by using rounded corner connections, the flexibility of the capacitor structure can be increased, making it more resistant to physical stress, thereby improving the durability and reliability of the capacitor, while providing a smoother and softer appearance, making the capacitor look more modern and beautiful.

[0060] In this embodiment, the diameter of the fillet is 10 mm.

[0061] In this embodiment, the capacitor structure further includes: a tinned copper wire 5 .

[0062] The first end and the second end of the tinned copper wire 5 are respectively disposed on the first electrode layer 3 .

[0063] In this embodiment, the tinned copper wire 5 has good electrical conductivity and can prevent the copper wire from being oxidized, thereby extending its service life.

[0064] A line connecting the first end and the second end coincides with the diameter of the hollow cylindrical structure.

[0065] In this embodiment, see Figure 2 , the basic performance of the specified capacitor structure includes:

[0066] The capacitance of the capacitor structure is 220pF, and the dielectric withstand voltage of the capacitor structure is 10kV; the dimensions of the capacitor structure are 60mm in diameter and 53mm in height; the capacitor chip height is 32mm, the thickness is 11mm, and the creepage distance is 24.85mm.

[0067] In this embodiment, the creepage distance is the distance along the surface from the first electrode layer 3 to the second electrode layer 2 .

[0068] The calculation formula for creepage distance is:

[0069]

[0070] Where C is the creepage distance, D is the height of the capacitor chip, and d 圆角is the diameter of the fillet, d 凹槽 is the diameter of the annular groove, d is the diameter of the capacitor structure, d 内径 is the inner diameter of the capacitor’s hollow cylindrical structure.

[0071] In this embodiment, the height of the capacitor chip is 32 mm, the diameter of the annular groove is 10 mm, the diameter of the fillet is 10 mm, and the inner diameter of the capacitor hollow cylindrical structure is 28 mm.

[0072] Creepage distance

[0073]

[0074] See also Figure 3 When the capacitor structure of the I-shaped chip is not used, and the capacitance of the capacitor structure is 220pF and the dielectric withstand voltage of the capacitor structure is 10kV, the size of the capacitor structure is 60mm in diameter and 53mm in height, and the creepage distance of the capacitor is 11mm.

[0075] In this embodiment, the allowable error range is 0 to 1 mm.

[0076] In this embodiment, after optimized design, an I-shaped structure design is adopted, the size of the capacitor remains unchanged, ensuring that the capacitance and dielectric withstand voltage meet user requirements, and the creepage distance is increased from 11mm to 24.85mm, thereby increasing the creepage distance and greatly reducing the electric shock breakdown efficiency, thereby solving the technical problem that surface breakdown seriously affects the normal function of the capacitor.

[0077] The capacitor structure of a high-voltage capacitor in this embodiment effectively increases the creepage distance between the two electrodes of the capacitor, reduces the probability of arcing along the chip surface, and reduces the voltage failure rate of the capacitor. At the same time, it meets the user's use needs, is convenient for users to use, and has stable product performance, which fully meets market demand.

[0078] Example 2

[0079] A voltage measuring device of this embodiment is used for a high-voltage power grid or a medium-high voltage power grid. The voltage measuring device includes a capacitor structure of any high-voltage capacitor in Embodiment 1. The high-voltage capacitor and the low-voltage capacitor are connected in series to form the voltage measuring device.

[0080] In this embodiment, by using the capacitor structure of any high-voltage capacitor in Embodiment 1, the creepage distance of the capacitor is effectively improved, which not only meets the user's usage requirements but also facilitates the user's use, and the product performance is stable, which fully meets the market demand.

[0081] In the description of the present utility model, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0082] In the present invention, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", "fix" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0083] In the present utility model, unless otherwise clearly specified and limited, when a first feature is “on” or “below” a second feature, it may be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, when a first feature is “above”, “above” or “above” a second feature, it may be that the first feature is directly above or obliquely above the second feature, or it may simply mean that the first feature is higher in level than the second feature. When a first feature is “below”, “below” or “below” a second feature, it may be that the first feature is directly below or obliquely below the second feature, or it may simply mean that the first feature is lower in level than the second feature.

[0084] In the description of this specification, the description of the terms "one embodiment", "some embodiments", "embodiment", "example", "specific example" or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0085] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations of the present invention. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A capacitor structure of a high-voltage capacitor, wherein the high-voltage capacitor is used to form a voltage measurement device of a power grid in series with a low-voltage capacitor, characterized in that: The capacitor structure includes: An I-shaped capacitor chip and a copper tube (4) for improving the surface creepage distance when the basic performance of the capacitor structure is specified; the copper tube (4) is welded on the capacitor chip; The capacitor chip comprises: A first electrode layer (3), a second electrode layer (2), and a ceramic body (1); The ceramic body (1) is a hollow cylindrical structure, an annular groove is provided on the outer surface of the ceramic body (1), the first electrode layer (3) covers the annular groove, and the second electrode layer (2) covers the inner surface of the hollow cylindrical structure.

2. The capacitor structure of a high voltage capacitor according to claim 1, characterized in that: The copper tube (4) is welded to the inner surface of the hollow cylindrical structure by soldering.

3. The capacitor structure of a high voltage capacitor according to claim 1, characterized in that: The first electrode layer (3) is a silver electrode layer coated on the annular groove, and the second electrode layer (2) is a silver electrode layer coated on the inner surface of the hollow cylindrical structure; The thickness of the first electrode layer (3) and the second electrode layer (2) ranges from 3 to 7 μm.

4. The capacitor structure of a high voltage capacitor according to claim 1, characterized in that: The center of the annular groove and the center of the hollow cylindrical structure are located at the same height.

5. The capacitor structure of a high voltage capacitor according to claim 4, characterized in that: The annular groove is a semicircular groove.

6. The capacitor structure of a high voltage capacitor according to claim 1, characterized in that: The top surface and the side surface of the hollow cylindrical structure are connected through rounded corners, and the bottom surface and the side surface of the hollow cylindrical structure are connected through rounded corners.

7. The capacitor structure of a high voltage capacitor according to claim 1, characterized in that: The capacitor structure further comprises: a tinned copper wire (5); The first end and the second end of the tinned copper wire (5) are respectively arranged on the first electrode layer (3); A line connecting the first end and the second end coincides with a diameter of the hollow cylindrical structure.

8. The capacitor structure of a high voltage capacitor according to claim 1, characterized in that: The basic properties of the specified capacitor structure include: The capacitance of the capacitor structure is 220pF, and the dielectric withstand voltage of the capacitor structure is 10kV; the dimensions of the capacitor structure are 60mm in diameter and 53mm in height; the capacitor chip height is 32mm, the thickness is 11mm, and the creepage distance is 24.85mm.

9. The capacitor structure of a high voltage capacitor according to claim 8, characterized in that: The creepage distance is the distance along the surface from the first electrode layer (3) to the second electrode layer (2); The calculation formula of the creepage distance is: Where C is the creepage distance, D is the height of the capacitor chip, and d 圆角 is the diameter of the fillet, d 凹槽 is the diameter of the annular groove, d is the diameter of the capacitor structure, d 内径 is the inner diameter of the capacitor’s hollow cylindrical structure.

10. A voltage measuring device, characterized in that: The voltage measuring device is used for a high voltage power grid or a medium-high voltage power grid, and comprises a capacitor structure of a high voltage capacitor as claimed in any one of claims 1 to 9, wherein the capacitor structure of the high voltage capacitor is connected in series with a low voltage capacitor to form a voltage measuring device.

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