Vertical cavity surface emitting laser

Abstract

A vertical cavity surface emitting laser, comprising: a substrate; a plurality of emission structures located on the substrate, wherein the projection patterns of the emission structures on the substrate are polygons; and the plurality of grooves are located on the substrate, the grooves are adjacent to the emission structure, the grooves expose the side surfaces of the emission structure, and the widths of the grooves in the direction perpendicular to the surface of the side wall of the emission structure are equal. The depth of the groove in the vertical cavity surface emitting laser is uniform, and the luminous efficiency is uniform.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a vertical cavity surface emitting laser. Background Art

[0002] Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor laser that emits laser perpendicular to the substrate surface. Currently, most VCSELs are based on gallium arsenide semiconductors, and the emission wavelength is mainly in the near-infrared band.

[0003] The structure of a vertical cavity surface emitting laser generally consists of three parts: an upper and lower Distributed Bragg Reflector (DBR) and an active part in the middle. The Bragg reflector is generally formed by alternating growth of two materials with different refractive indices and a thickness of one-quarter of the wavelength of light.

[0004] However, the structure and performance of existing VCSELs need to be improved. Utility Model Content

[0005] The technical problem solved by the utility model is to provide a vertical cavity surface emitting laser to improve the structure and performance of the vertical cavity surface emitting laser.

[0006] In order to solve the above technical problems, an embodiment of the utility model provides a vertical cavity surface emitting laser, comprising: a substrate; a plurality of emitting structures located on the substrate, the projection pattern of the emitting structures on the substrate is a polygon; a plurality of grooves located on the substrate, the grooves are adjacent to the emitting structures, the grooves expose the side surfaces of the emitting structures, and the widths of the grooves in the direction perpendicular to the side wall surfaces of the emitting structures are equal.

[0007] Optionally, the multiple emission structures include adjacent first emission structures and second emission structures, the groove is located between the first emission structure and the second emission structure, the groove exposes the side wall surface of the first emission structure, and the groove also exposes the corresponding side wall surface of the second emission structure, and the multiple grooves surrounding one emission structure are interconnected.

[0008] Optionally, the plurality of emission structures include adjacent first emission structures and second emission structures; the plurality of grooves include first grooves and second grooves, and one first groove and one second groove are located between adjacent first emission structures and second emission structures; the first groove is adjacent to the first emission structure, exposing the side wall surface of the first emission structure; the second groove is adjacent to the second emission structure, exposing the side wall surface of the second emission structure; the first groove has an equal width in a direction perpendicular to the side wall surface of the first emission structure, and the second groove has an equal width in a direction perpendicular to the side wall surface of the second emission structure; the first groove and the second groove are independent of each other.

[0009] Optionally, a plurality of the first grooves surrounding one of the first emitting structures are interconnected.

[0010] Optionally, a plurality of the second grooves surrounding one of the second emitting structures are interconnected.

[0011] Optionally, it further includes: a first protrusion located between the first emitting structure and the second emitting structure, and the first groove and the second groove respectively expose two opposite sides of the first protrusion.

[0012] Optionally, a plurality of the first grooves surrounding one of the first emitting structures are separated from each other; a plurality of the second grooves surrounding one of the second emitting structures are separated from each other.

[0013] Optionally, the first protrusion has a first width between the groove and the second groove, and an absolute value of a difference between a maximum value and a minimum value of the first width is within a preset range.

[0014] Optionally, the first width is greater than or equal to 2 microns.

[0015] Optionally, the shape of the polygon includes a regular hexagon or a square.

[0016] Optionally, the emitting structure includes: a first reflector structure located on the surface of the substrate; an active layer located on the first reflector structure; at least two overlapping second reflector structures located on the active layer, the conductivity type of the second reflector structure being different from the conductivity type of the first reflector structure; the groove passes through the second reflector structure and the active layer, and the bottom of the groove is embedded in the first reflector structure.

[0017] Optionally, the emitting structure further includes: a light blocking layer and a light transmitting layer located between two adjacent second reflector structures, the light blocking layer surrounds the light transmitting layer, and the projection pattern of the light transmitting layer on the surface of the substrate is a polygon; the groove exposes the side wall surface of the light blocking layer.

[0018] Compared with the prior art, the technical solution of the embodiment of the utility model has the following beneficial effects:

[0019] In the vertical cavity surface emitting laser of the embodiment of the utility model, the projection pattern of the emission structure on the substrate is a polygon, and the width of the groove in the direction perpendicular to the side wall surface of the emission structure is equal. Since the width of the groove in the direction perpendicular to the side wall surface of the emission structure is equal, the etching rate of the groove formed by etching is relatively uniform, and the depth uniformity of the formed groove is better, so that the vertical cavity surface emitting laser has a more uniform light-emitting effect, and the performance of the vertical cavity surface emitting laser is improved.

[0020] Furthermore, the plurality of grooves surrounding one emitting structure are separated, so that the projection of the light beam emitted by the emitting structure can be closer to the projection of the light beam emitted by a circular emitting structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 and Figure 2 is a schematic structural diagram of a vertical cavity surface emitting laser in one embodiment;

[0022] Figure 3 and Figure 4 It is a structural schematic diagram of a vertical cavity surface emitting laser in one embodiment of the utility model;

[0023] Figure 5 and Figure 6 is a schematic structural diagram of a vertical cavity surface emitting laser in another embodiment of the utility model;

[0024] Figure 7 and Figure 8 It is a structural schematic diagram of a vertical cavity surface emitting laser in another embodiment of the utility model. DETAILED DESCRIPTION

[0025] The structure and performance of the existing vertical cavity surface emitting lasers still need to be improved. Now, an analysis and description will be given in conjunction with specific embodiments.

[0026] Figure 1 and Figure 2 1 is a schematic diagram of the structure of a vertical cavity surface emitting laser in one embodiment.

[0027] Please refer to Figure 1 and Figure 2 , Figure 1 yes Figure 2 Schematic diagram of the cross-section structure along the section line AA1. Figure 2 for Figure 1The vertical cavity surface emitting laser comprises: a substrate 100, wherein the substrate 100 comprises a plurality of resonance regions I and an isolation region II surrounding the resonance region I; a first reflector structure located on the surface of the substrate 100, wherein the first reflector structure comprises a plurality of first stacked structures, wherein the first stacked structures comprise a first reflection layer 101 and a second reflection layer 102 located on the first reflection layer 101; an active layer 103 located on the first reflector structure; at least two overlapping second reflector structures located on the surface of the active layer 103 and a light-transmitting material layer 106 located between adjacent second reflector structures, wherein the conductivity type of the second reflector structure is opposite to that of the first reflector structure, wherein the second reflector structure comprises a plurality of second stacked structures, wherein the second stacked structures comprise a third reflection layer 104 and a fourth reflection layer 105 located on the third reflection layer 104; and a plurality of second reflector structures located on the surface of the resonant layer 101. A light-blocking layer 110 and a light-transmitting layer 109 between two adjacent second reflector structures on the resonance zone I, wherein the light-blocking layer 110 surrounds the light-transmitting layer 109, and the projection of the light-transmitting layer 109 on the surface of the substrate 100 is circular; a light-transmitting material layer 106 between two adjacent second reflector structures on the resonance zone I, wherein the light-blocking layer 110 is obtained by modifying the light-transmitting material layer 106; a first passivation layer 107 on the second reflector structure; a groove 111 on the isolation zone II, which passes through the first passivation layer 107, the second reflector structure and the active layer 103, wherein the bottom of the groove 111 is embedded in the first reflector structure, the groove 111 surrounds the resonance zone I, and the groove 111 exposes the side wall surface of the light-blocking layer 110 on the adjacent resonance zone I; and a second passivation layer 108 located on the side wall surface and bottom surface of the groove 111 and the surface of the first passivation layer 107.

[0028] In the vertical cavity surface emitting laser, the projection of the light-transmitting layer 109 on the surface of the substrate 100 is circular, the light-blocking layer 110 surrounds the light-transmitting layer 109, the projection of the resonance region I on the surface of the substrate 100 is circular, and the groove 111 exposes the side wall surface of the light-blocking layer 110 on the adjacent resonance region I. Then, the width of the groove 111 on the adjacent resonance region I is uneven, such as Figure 2 As shown, the width of the groove 111 between adjacent resonance regions I is wide or narrow, which makes the etching rate of forming the groove 111 with a wider width and the groove 111 with a narrower width different when the first passivation layer 107, the second reflector structure, the active layer 103 and the first reflector structure are etched to form the groove 111. The etching rate is faster in the wide area and slower in the narrow area, so that the depth h2 of the groove 111 in the wider area is greater than the depth h1 of the groove 111 in the narrower area ( Figure 1As shown in FIG. 1 , that is, the depths of the grooves 111 between adjacent resonance regions I are different, which makes the light-emitting efficiency of each resonance region I uneven, affecting the performance of the vertical cavity surface emitting laser.

[0029] In order to solve the above problems, the embodiment of the utility model provides a vertical cavity surface emitting laser, the projection pattern of the emitting structure on the substrate is a polygon, and the width of the groove in the direction perpendicular to the side wall surface of the emitting structure is equal. Since the width of the groove in the direction perpendicular to the side wall surface of the emitting structure is equal, the etching rate of the groove formed by etching is relatively uniform, and the depth uniformity of the formed groove is better, so that the vertical cavity surface emitting laser has a more uniform light-emitting effect, and the performance of the vertical cavity surface emitting laser is improved.

[0030] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0031] Figure 3 and Figure 4 It is a structural schematic diagram of a vertical cavity surface emitting laser in one embodiment of the utility model.

[0032] Please refer to Figure 3 and Figure 4 , Figure 3 yes Figure 4 Schematic diagram of the cross-section structure along the section line BB1. Figure 4 for Figure 3 The vertical cavity surface emitting laser comprises: a substrate 200; a plurality of emitting structures located on the substrate 200, wherein the projection pattern of the emitting structures on the substrate 200 is a polygon; a plurality of grooves 211 located on the substrate 200, wherein the grooves 211 are adjacent to the emitting structures, wherein the grooves 211 expose the side surfaces of the emitting structures, and wherein the widths of the grooves 211 in a direction perpendicular to the side wall surfaces of the emitting structures are equal.

[0033] Since the width of the groove 211 in the direction perpendicular to the side wall surface of the emitting structure is equal, the etching rate of the groove 211 is relatively uniform, and the depth uniformity of the formed groove 211 is better, so that the vertical cavity surface emitting laser has a more uniform light-emitting effect, thereby improving the performance of the vertical cavity surface emitting laser.

[0034] The emitting structure includes: a first reflector structure located on the surface of the substrate 200; an active layer 203 located on the first reflector structure; at least two overlapping second reflector structures located on the active layer 203, the conductivity type of the second reflector structure being different from that of the first reflector structure; the groove 211 passes through the second reflector structure and the active layer 203, and the bottom of the groove 211 is embedded in the first reflector structure.

[0035] The emitting structure also includes: a light-blocking layer 210 and a light-transmitting layer 209 located between two adjacent second reflector structures, the light-blocking layer 210 surrounds the light-transmitting layer 209, and the projection pattern of the light-transmitting layer 209 on the surface of the substrate 200 is a polygon; the groove 211 exposes the side wall surface of the light-blocking layer 210; a light-transmitting material layer 206 located between two adjacent second reflector structures, the light-blocking layer 210 is obtained by modifying the light-transmitting material layer 206; a first passivation layer 207 located on the second reflector structure; the groove 211 penetrates the first passivation layer 207, the second reflector structure and the active layer 203, and the bottom of the groove 211 is embedded in the first reflector structure.

[0036] In this embodiment, the multiple emission structures include adjacent first emission structures 220 and second emission structures 221, the groove 211 is located between the first emission structure 220 and the second emission structure 221, the groove 211 exposes the side wall surface of the first emission structure 220, and the groove 211 also exposes the corresponding side wall surface of the second emission structure 221, and the multiple grooves 211 surrounding one emission structure are interconnected.

[0037] The polygonal shape includes a regular hexagon or a square.

[0038] In this embodiment, the polygonal shape includes a regular hexagon. The plurality of emitting structures are distributed in a honeycomb shape.

[0039] In this embodiment, the absolute value of the difference between the maximum width and the minimum width of the groove 211 is within a preset range.

[0040] In this embodiment, the width of the groove 211 is greater than or equal to 2 micrometers.

[0041] The vertical cavity surface emitting laser further includes: a first passivation layer 207 located on the second reflector structure.

[0042] The formation process of the groove 211 is: etching the first passivation layer 207, the second reflector structure, the light-transmitting material layer 206, the active layer 203 and the first reflector structure to form the groove 211, which penetrates the first passivation layer 207, the second reflector structure, the light-transmitting material layer 206 and the active layer 203 and its bottom is embedded in the first reflector structure. Since the width of the groove 211 in the direction perpendicular to the side wall surface of the emission structure is equal, the etching rate of etching to form the groove 211 is relatively uniform, and the depth uniformity of the formed groove 211 is good, so that the vertical cavity surface emitting laser has a relatively uniform light-emitting effect, and the performance of the vertical cavity surface emitting laser is improved.

[0043] In this embodiment, the vertical cavity surface emitting laser also includes: a second passivation layer 208 located on the side wall surface and bottom surface of the groove 211 and the surface of the first passivation layer 207; a first electrode layer 212 located in the first passivation layer 207, in the second passivation layer 208 and on the surface of the second passivation layer 208, and the first electrode layer 212 is electrically connected to the second reflector structure.

[0044] In this embodiment, the substrate 200 includes a first surface and a second surface opposite to each other, and the first reflector structure is located on the first surface of the substrate 200 ; the VCSEL further includes: a second electrode layer 213 located on the second surface of the substrate 200 .

[0045] In this embodiment, the first reflector structure is an N-type Bragg reflector, and the second reflector structure is a P-type Bragg reflector. The material of the first reflector structure is doped with silicon ions, and the material of the second reflector structure is doped with carbon ions.

[0046] The first reflector structure includes a plurality of first stacked structures. The first stacked structures include a first reflective layer 201 and a second reflective layer 202 located on the first reflective layer 201. The first reflective layer 201 and the second reflective layer 202 have different refractive indices.

[0047] In this embodiment, the material of the first reflective layer 201 includes AlGaAs x Ga 1-x As), the material of the second reflective layer 202 includes gallium arsenide.

[0048] The second reflector structure includes a plurality of second stacked structures. The second stacked structures include a third reflective layer 204 and a fourth reflective layer 205 located on the third reflective layer 204. The third reflective layer 204 and the fourth reflective layer 205 have different refractive indices.

[0049] In this embodiment, the material of the third reflective layer 204 includes AlGaAs x Ga 1-x As), the material of the fourth reflective layer 205 includes gallium arsenide.

[0050] The active layer 203 includes a plurality of first barrier layers (not shown) and a second barrier layer (not shown) alternately stacked along a direction perpendicular to the surface of the substrate 200 , and a well layer (not shown) located between adjacent first barrier layers and second barrier layers.

[0051] The material of the first barrier layer includes P-type gallium arsenide, in which carbon ions are doped; the material of the second barrier layer includes N-type gallium arsenide, in which silicon ions are doped; the material of the well layer includes indium gallium arsenide (InGaAs). 0.2 Ga 0.8 As).

[0052] In this embodiment, the vertical cavity surface emitting laser also includes: a reflective material layer (not marked) located on the light blocking layer 210 and on the surface of the light transmitting layer 209, the material of the reflective material layer being the same as the material of the second reflective layer 202; the reflective material layer being located between two adjacent layers of the second reflector structure.

[0053] In this embodiment, the material of the light-transmitting material layer 206 includes gallium aluminum arsenide.

[0054] In this embodiment, the material of the first passivation layer 207 includes silicon nitride; the material of the second passivation layer 208 includes silicon nitride.

[0055] Figure 5 and Figure 6 It is a structural schematic diagram of a vertical cavity surface emitting laser in another embodiment of the utility model.

[0056] Please refer to Figure 5 and Figure 6 , Figure 5 yes Figure 6 Schematic diagram of the cross-sectional structure along the section line CC1. Figure 6 for Figure 5 The vertical cavity surface emitting laser comprises: a substrate 300; a plurality of emitting structures located on the substrate 300, wherein the projection pattern of the emitting structures on the substrate 300 is a polygon; a plurality of grooves located on the substrate 300, wherein the grooves are adjacent to the emitting structures, the grooves expose the side surfaces of the emitting structures, and the widths of the grooves in the direction perpendicular to the side wall surfaces of the emitting structures are equal.

[0057] Since the width of the groove in the direction perpendicular to the side wall surface of the emitting structure is equal, the etching rate of the groove is relatively uniform, and the depth uniformity of the formed groove is better, so that the vertical cavity surface emitting laser has a more uniform light-emitting effect, thereby improving the performance of the vertical cavity surface emitting laser.

[0058] In this embodiment, the multiple emission structures include adjacent first emission structures 321 and second emission structures 320, and the multiple grooves include first grooves 311 and second grooves 314. One first groove 311 and one second groove 314 are located between adjacent first emission structures 321 and second emission structures 320. The first groove 311 exposes the side wall surface of the first emission structure 321, and the second groove 314 exposes the side wall surface of the second emission structure 320. The first groove 311 and the second groove 314 are independent of each other.

[0059] In this embodiment, a plurality of first grooves 311 surrounding one first emitting structure 321 are interconnected.

[0060] In this embodiment, a plurality of second grooves 314 surrounding one second emitting structure 320 are interconnected.

[0061] In this embodiment, the VCSEL further includes: a first protrusion 322 located between the first emitting structure 321 and the second emitting structure 320 , and the first groove 311 and the second groove 314 respectively expose two opposite sides of the first protrusion 322 .

[0062] In this embodiment, the first protrusion 322 has a first width d1 between the first groove 311 and the second groove 314 , and the absolute value of the difference between the maximum value and the minimum value of the first width d1 is within a preset range.

[0063] In this embodiment, the first width d1 is greater than or equal to 2 micrometers.

[0064] The emitting structure includes: a first reflector structure located on the surface of the substrate 300; an active layer 303 located on the first reflector structure; at least two overlapping second reflector structures located on the active layer 303, the conductivity type of the second reflector structure being different from that of the first reflector structure; the groove runs through the second reflector structure and the active layer 303, and the bottom of the groove is embedded in the first reflector structure.

[0065] The emitting structure also includes: a light-blocking layer 310 and a light-transmitting layer 309 located between two adjacent second reflector structures, wherein the light-blocking layer 310 surrounds the light-transmitting layer 309, and the projection pattern of the light-transmitting layer 309 on the surface of the substrate 300 is a polygon; the groove 311 exposes the side wall surface of the light-blocking layer 310; a light-transmitting material layer 306 located between two adjacent second reflector structures, wherein the light-blocking layer 310 is obtained by modifying the light-transmitting material layer 306; a first passivation layer 307 located on the second reflector structure; and the groove passes through the first passivation layer 307, the second reflector structure and the active layer 303, and is embedded in the first reflector structure.

[0066] The polygonal shape includes a regular hexagon or a square.

[0067] In this embodiment, the polygonal shape includes a regular hexagon. The plurality of emitting structures are distributed in a honeycomb shape.

[0068] In this embodiment, the width of the first groove 311 is greater than or equal to 2 micrometers; the width of the second groove 314 is greater than or equal to 2 micrometers.

[0069] In this embodiment, the vertical cavity surface emitting laser also includes: a first passivation layer 307 located on the second reflector structure; a second passivation layer 308 located on the side wall surface and bottom surface of the first groove 311, the side wall surface and bottom surface of the second groove 314, and the surface of the first passivation layer 307; a first electrode layer 312 located in the first passivation layer 307, in the second passivation layer 308, and on the surface of the second passivation layer 308, and the first electrode layer 312 is electrically connected to the second reflector structure.

[0070] In this embodiment, the substrate 300 includes a first surface and a second surface opposite to each other, and the first reflector structure is located on the first surface of the substrate 300; the vertical cavity surface emitting laser further includes: a second electrode layer 313 located on the second surface of the substrate 300.

[0071] In this embodiment, the first reflector structure is an N-type Bragg reflector, and the second reflector structure is a P-type Bragg reflector. The material of the first reflector structure is doped with silicon ions, and the material of the second reflector structure is doped with carbon ions.

[0072] The first reflector structure includes a plurality of first stacked structures. The first stacked structures include a first reflective layer 301 and a second reflective layer 302 located on the first reflective layer 301 . The first reflective layer 301 and the second reflective layer 302 have different refractive indices.

[0073] In this embodiment, the material of the first reflective layer 301 includes AlGaAs x Ga 1-x As), the material of the second reflective layer 302 includes gallium arsenide.

[0074] The second reflector structure includes a plurality of second stacked structures, wherein the second stacked structures include a third reflective layer 304 and a fourth reflective layer 305 located on the third reflective layer 304 , and the third reflective layer 304 and the fourth reflective layer 305 have different refractive indices.

[0075] In this embodiment, the material of the third reflective layer 304 includes AlGaAs x Ga 1-x As), the material of the fourth reflective layer 305 includes gallium arsenide.

[0076] The active layer 303 includes a plurality of first barrier layers (not shown) and a second barrier layer (not shown) alternately stacked in a direction perpendicular to the surface of the substrate 300 , and a well layer (not shown) located between adjacent first barrier layers and second barrier layers.

[0077] The material of the first barrier layer includes P-type gallium arsenide, in which carbon ions are doped; the material of the second barrier layer includes N-type gallium arsenide, in which silicon ions are doped; the material of the well layer includes indium gallium arsenide (InGaAs). 0.2 Ga 0.8 As).

[0078] In this embodiment, the vertical cavity surface emitting laser also includes: a reflective material layer (not marked) located on the light blocking layer 310 and on the surface of the light transmitting layer 309, the material of the reflective material layer being the same as the material of the second reflective layer 302; the reflective material layer being located between two adjacent layers of the second reflector structure.

[0079] In this embodiment, the material of the light-transmitting material layer 306 includes gallium aluminum arsenide.

[0080] In this embodiment, the material of the first passivation layer 307 includes silicon nitride; the material of the second passivation layer 308 includes silicon nitride.

[0081] Figure 7 and Figure 8 It is a structural schematic diagram of a vertical cavity surface emitting laser in another embodiment of the utility model.

[0082] Please refer to Figure 7 and Figure 8 , Figure 8 yes Figure 7 Schematic diagram of the cross-sectional structure along the section line DD1. Figure 8To omit Figure 7 A top view of the structure at the first width d1, Figure 7 and Figure 8 The vertical cavity surface emitting laser in Figure 5 and Figure 6 The difference between the vertical cavity surface emitting laser and the vertical cavity surface emitting laser is that: in this embodiment, the plurality of first grooves 311 are separated from each other; and the plurality of second grooves 314 are separated from each other.

[0083] Since the width of the first groove 311 in the direction perpendicular to the side wall surface of the emitting structure is equal, and the width of the second groove 314 in the direction perpendicular to the side wall surface of the emitting structure is equal, the etching rate for etching the first groove 311 and the second groove 314 is relatively uniform, and the depth uniformity of the formed first groove 311 and the second groove 314 is better, so that the vertical cavity surface emitting laser has a more uniform light-emitting effect, thereby improving the performance of the vertical cavity surface emitting laser.

[0084] In addition, a plurality of the first grooves 311 are separated, and a plurality of the second grooves 314 are separated, so that the projection of the light beam emitted by the emitting structure can be closer to the projection of the light beam emitted by the circular emitting structure.

[0085] Although the utility model is disclosed as above, the utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the utility model. Therefore, the protection scope of the utility model shall be subject to the scope defined by the claims.

Claims

1. A vertical cavity surface emitting laser, characterized in that: include: substrate; A plurality of emitting structures are located on the substrate, wherein the projection patterns of the emitting structures on the substrate are polygonal; A plurality of grooves are disposed on the substrate, wherein the grooves are adjacent to the emission structure, the grooves expose side surfaces of the emission structure, and the grooves have equal widths in a direction perpendicular to the sidewall surfaces of the emission structure.

2. The vertical cavity surface emitting laser according to claim 1, characterized in that: The multiple emission structures include adjacent first emission structures and second emission structures, the groove is located between the first emission structure and the second emission structure, the groove exposes the side wall surface of the first emission structure, and the groove also exposes the corresponding side wall surface of the second emission structure, and the multiple grooves surrounding one emission structure are interconnected.

3. The vertical cavity surface emitting laser according to claim 1, characterized in that: The plurality of emission structures include adjacent first emission structures and second emission structures; the plurality of grooves include first grooves and second grooves, one first groove and one second groove are located between adjacent first emission structures and second emission structures; the first groove is adjacent to the first emission structure and exposes the side wall surface of the first emission structure; the second groove is adjacent to the second emission structure and exposes the side wall surface of the second emission structure; the first groove has an equal width in a direction perpendicular to the side wall surface of the first emission structure, and the second groove has an equal width in a direction perpendicular to the side wall surface of the second emission structure; The first groove and the second groove are independent of each other.

4. The vertical cavity surface emitting laser according to claim 3, characterized in that: A plurality of the first grooves surrounding one of the first emitting structures are interconnected.

5. The vertical cavity surface emitting laser according to claim 3, characterized in that: A plurality of the second grooves surrounding one of the second emitting structures penetrate each other.

6. The vertical cavity surface emitting laser according to claim 3, characterized in that: Also includes: The first protrusion is located between the first emitting structure and the second emitting structure, and the first groove and the second groove respectively expose two opposite sides of the first protrusion.

7. The vertical cavity surface emitting laser according to claim 6, characterized in that: A plurality of the first grooves surrounding one of the first emission structures are separated from each other; a plurality of the second grooves surrounding one of the second emission structures are separated from each other.

8. The vertical cavity surface emitting laser according to claim 6, characterized in that: The first protrusion has a first width between the first groove and the second groove, and an absolute value of a difference between a maximum value and a minimum value of the first width is within a preset range.

9. The vertical cavity surface emitting laser according to claim 8, characterized in that: The first width is in a range greater than or equal to 2 micrometers.

10. The vertical cavity surface emitting laser according to claim 1, characterized in that: The polygonal shape includes a regular hexagon or a square.

11. The vertical cavity surface emitting laser according to claim 1, characterized in that: The emitting structure includes: a first reflector structure located on the surface of the substrate; an active layer located on the first reflector structure; at least two overlapping second reflector structures located on the active layer, the conductivity type of the second reflector structure being different from that of the first reflector structure; the groove runs through the second reflector structure and the active layer, and the bottom of the groove is embedded in the first reflector structure.

12. The vertical cavity surface emitting laser according to claim 11, characterized in that: The emission structure also includes: a light blocking layer and a light transmitting layer located between two adjacent second reflector structures, the light blocking layer surrounds the light transmitting layer, and the projection pattern of the light transmitting layer on the substrate surface is a polygon; the groove exposes the side wall surface of the light blocking layer.

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