Split type cavity of silicon single crystal furnace

Abstract

The utility model discloses a split type cavity of a silicon single crystal furnace, which comprises at least two furnace cavity units and a furnace cover, and a cavity positioning structure is arranged between the upper and lower adjacent furnace cavity units; the cavity positioning structure comprises a first positioning ring arranged on the upper edge of the furnace cavity unit and a second positioning ring arranged on the lower edge of the furnace cavity unit. And the second positioning ring can be nested on the outer side wall of the first positioning ring. The utility model has the beneficial effects that the first positioning ring and the second positioning ring in the technical scheme can be automatically calibrated when being assembled, so that the central axis of the furnace cavity unit is overlapped with the designed central axis, the quick positioning and installation can be ensured when the furnace cavity unit is assembled, the structure is simple, and the maintenance cost is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal production, in particular to a split cavity of a silicon single crystal furnace. Background Art

[0002] The world energy crisis has promoted the development of the photovoltaic market. Crystalline silicon solar cells are the leading products in the photovoltaic industry. Silicon single crystal furnaces are devices that produce single crystal silicon required for solar cells. They are composed of six parts: chassis, lower furnace chamber, upper furnace chamber, furnace cover, flip box, and crystal storage chamber. With the development of the market, the market competition for crystalline silicon solar cells is fierce, and how to improve the quality and production efficiency of single crystal furnaces has received widespread attention.

[0003] At present, in order to ensure the quality of crystals, the silicon single crystal furnace needs to be dismantled and cleaned once every five furnaces. However, after the cleaning is completed, the silicon single crystal furnace needs to be assembled. Since all the upper and lower furnace cavity units must be coaxial during assembly, the alignment and connection structure between the furnace cavity units are extremely high. Therefore, it is necessary to develop a single crystal furnace split cavity that can be highly coaxial during installation. After searching, no technical solution identical to the present utility model was found. Utility Model Content

[0004] The main technical problem solved by the utility model is to provide a split-type cavity of a single crystal furnace which can be highly coaxial during installation, so as to solve one or more of the above-mentioned problems of the prior art.

[0005] In order to solve the above technical problems, a technical solution adopted by the utility model is: a split cavity of a silicon single crystal furnace, the innovation of which is: comprising at least two furnace cavity units and a furnace cover, and a cavity positioning structure is provided between the upper and lower adjacent furnace cavity units;

[0006] The cavity positioning structure comprises a first positioning ring arranged at the upper edge of the furnace cavity unit and a second positioning ring arranged at the lower edge of the furnace cavity unit;

[0007] The second positioning ring can be nested on the outer side wall of the first positioning ring.

[0008] In some embodiments, the first positioning ring is located on the outer side wall of the furnace cavity unit and the upper edge of the first positioning ring is flush with the top upper edge of the furnace cavity unit, and the outer side of the first positioning ring is stepped.

[0009] In some embodiments, the outer wall of the first positioning ring is composed of a first light plane, a first slope surface, and a second light plane, and the upper and lower ends of the first slope surface are connected to the first light plane and the second light plane respectively; the distance between the first light plane and the central axis of the first positioning ring is r, the distance between the second light plane and the central axis of the first positioning ring is R, and the radius R of the inner wall of the second positioning ring is， , the R ， The value of is between r and R.

[0010] In some embodiments, the inner wall of the second positioning ring is sloped, the inclination angle of the inner wall of the second positioning ring is consistent with the inclination angle of the second light plane, and the slope width of the inner wall of the second positioning ring is smaller than the width of the second light plane.

[0011] The beneficial effects of the utility model are as follows: the first positioning ring and the second positioning ring of the technical solution will automatically calibrate during assembly so that the central axis of the furnace cavity unit coincides with the designed central axis, ensuring rapid positioning and installation during assembly. The technical solution has a simple structure and reduces maintenance costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0013] Figure 1 It is a structural schematic diagram of Example 1 of a split cavity of a silicon single crystal furnace of the utility model.

[0014] Figure 2 yes Figure 1 A partial enlarged view of .

[0015] Figure 3 It is a structural schematic diagram of Example 2 of a split cavity of a silicon single crystal furnace of the utility model.

[0016] Figure 4 yes Figure 3 A partial enlarged view of .

[0017] Figure 5 It is a structural schematic diagram of Example 3 of a split cavity of a silicon single crystal furnace of the utility model.

[0018] Figure 6 yes Figure 5 A partial enlarged view of . DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Example

[0020] like Figure 1 and Figure 2 As shown, the embodiment of the utility model includes:

[0021] A split cavity of a silicon single crystal furnace comprises at least two furnace cavity units and a furnace cover, wherein a cavity positioning structure is provided between the upper and lower adjacent furnace cavity units;

[0022] The cavity positioning structure comprises a first positioning ring 100 arranged at the upper edge of the furnace cavity unit and a second positioning ring 200 arranged at the lower edge of the furnace cavity unit;

[0023] The second positioning ring 200 may be nested on the outer side wall of the first positioning ring 100 .

[0024] In this embodiment, the first positioning ring 100 is located on the outer side wall of the furnace cavity unit and the upper edge of the first positioning ring 100 is flush with the top upper edge of the furnace cavity unit, and the outer side of the first positioning ring 100 is stepped.

[0025] In the technical solution, the two upper and lower adjacent furnace cavity units are self-positioned by the first positioning ring 100 and the second positioning ring 200, which can achieve rapid positioning during the actual assembly process, facilitate subsequent locking, and achieve basic coaxiality between the installation and the designed central axis. Example

[0026] like Figure 3 and Figure 4 As shown, the embodiment of the utility model includes:

[0027] A split cavity of a silicon single crystal furnace comprises at least two furnace cavity units and a furnace cover, wherein a cavity positioning structure is provided between the upper and lower adjacent furnace cavity units;

[0028] The cavity positioning structure comprises a first positioning ring 100 arranged at the upper edge of the furnace cavity unit and a second positioning ring 200 arranged at the lower edge of the furnace cavity unit;

[0029] The second positioning ring 200 may be nested on the outer side wall of the first positioning ring 100 .

[0030] In some embodiments, the first positioning ring 100 is located on the outer side wall of the furnace cavity unit and the upper edge of the first positioning ring 100 is flush with the top upper edge of the furnace cavity unit, and the outer side of the first positioning ring 100 is stepped.

[0031] In some embodiments, the outer wall of the first positioning ring 100 is composed of a first light plane 101, a first slope surface 102 and a second light plane 103, and the upper and lower ends of the first slope surface 102 are connected to the first light plane 101 and the second light plane respectively; the distance between the first light plane 101 and the central axis of the first positioning ring 100 is r, the distance between the second light plane and the central axis of the first positioning ring is R, and the radius R of the inner wall of the second positioning ring 200 ， , the R ， The value of is between r and R.

[0032] In the technical solution, the two furnace cavity units adjacent to each other above and below are self-positioned by the first positioning ring 100 and the second positioning ring 200. In the technical solution, the bottom of the second positioning ring 200 is sleeved on the first slope surface 102 of the first positioning ring 100, and the slope of the second light plane is used with the furnace cavity unit of the upper layer to achieve rapid self-axis positioning. This solution can re-axis and coincide with the designed axis when axis deviation occurs during the installation of the lower layer, thereby avoiding secondary deviation and preventing the deviation from becoming larger and larger. The overall crystallization ability and air tightness of the furnace body are not affected after re-axis positioning. Example

[0033] like Figure 5 and Figure 6 As shown, the embodiment of the utility model includes:

[0034] A split cavity of a silicon single crystal furnace comprises at least two furnace cavity units and a furnace cover, wherein a cavity positioning structure is provided between the upper and lower adjacent furnace cavity units;

[0035] The cavity positioning structure comprises a first positioning ring 100 arranged at the upper edge of the furnace cavity unit and a second positioning ring 200 arranged at the lower edge of the furnace cavity unit;

[0036] The second positioning ring 200 may be nested on the outer side wall of the first positioning ring 100 .

[0037] In some embodiments, the first positioning ring 100 is located on the outer side wall of the furnace cavity unit and the upper edge of the first positioning ring 100 is flush with the top upper edge of the furnace cavity unit, and the outer side of the first positioning ring 100 is stepped.

[0038] In some embodiments, the outer wall of the first positioning ring 100 is composed of a first light plane 101, a first slope surface 102 and a second light plane 103, and the upper and lower ends of the first slope surface 102 are connected to the first light plane 101 and the second light plane respectively; the distance between the first light plane 101 and the central axis of the first positioning ring 100 is r, the distance between the second light plane and the central axis of the first positioning ring is R, and the radius R of the inner wall of the second positioning ring 200 ， , the R， The value of is between r and R.

[0039] In some embodiments, the inner wall of the second positioning ring 200 is sloped, the inclination angle of the inner wall of the second positioning ring 200 is consistent with the inclination angle of the second light plane, and the slope width of the inner wall of the second positioning ring 200 is smaller than the width of the second light plane.

[0040] In the technical scheme, the two furnace cavity units adjacent to each other above and below are self-positioned by the first positioning ring 100 and the second positioning ring 200. In the technical scheme, the inner wall slope of the second positioning ring 200 will be sleeved on the first slope surface 102 of the first positioning ring 100, and the slope of the second light plane and the slope of the inner wall of the second positioning ring 200 of the upper furnace cavity unit are used to achieve rapid self-axis positioning. This scheme can realize re-axis positioning and coincide with the designed central axis when axis deviation occurs during the installation of the lower layer, thereby avoiding secondary deviation and preventing the deviation from becoming larger and larger. The overall crystallization ability and air tightness of the furnace body are not affected after re-axis positioning.

[0041] The beneficial effects of the utility model are as follows: the first positioning ring 100 and the second positioning ring 200 of the technical solution will automatically calibrate during assembly so that the central axis of the furnace cavity unit coincides with the designed central axis, ensuring rapid positioning and installation during assembly. The technical solution has a simple structure and reduces maintenance costs.

[0042] The above description is only an embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A split cavity of a silicon single crystal furnace, characterized in that: It comprises at least two furnace cavity units and a furnace cover, and a cavity positioning structure is provided between the upper and lower adjacent furnace cavity units; The cavity positioning structure comprises a first positioning ring (100) arranged on the upper edge of the furnace cavity unit and a second positioning ring (200) arranged on the lower edge of the furnace cavity unit; the second positioning ring (200) can be nested on the outer side wall of the first positioning ring (100).

2. The split-type cavity of a silicon single crystal furnace according to claim 1, characterized in that: The first positioning ring (100) is located on the outer side wall of the furnace cavity unit, and the upper edge of the first positioning ring (100) is flush with the upper edge of the top of the furnace cavity unit; the outer side of the first positioning ring (100) is in a stepped shape.

3. The split-type chamber of a silicon single crystal furnace according to claim 1, characterized in that: The outer wall of the first positioning ring (100) is composed of a first light plane (101), a first slope surface (102) and a second light plane (103); the upper and lower ends of the first slope surface (102) are connected to the first light plane (101) and the second light plane respectively; the distance between the first light plane (101) and the central axis of the first positioning ring (100) is r, the distance between the second light plane and the central axis of the first positioning ring is R, and the radius R of the inner wall of the second positioning ring (200) is ， , the value of R is between r and R ， between.

4. The split-type cavity of a silicon single crystal furnace according to claim 1, characterized in that: The inner wall of the second positioning ring (200) is sloped, the inclination angle of the inner wall of the second positioning ring (200) is consistent with the inclination angle of the second light plane, and the slope width of the inner wall of the second positioning ring (200) is smaller than the width of the second light plane.

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