Beta radiation volt photovoltaic dual-effect nuclear battery
Through the design of β-radiation volt photovoltaic dual-effect nuclear battery, combined with β-radiation volt effect and photovoltaic effect, the needs that traditional batteries are difficult to meet in high power density and long-life applications are solved, and efficient and stable energy conversion and high energy density are achieved.
Patent Information
- Application Number
- CN202421089431.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-17
- Publication Date
- 2025-05-09
- Estimated Expiration
- 2034-05-17
AI Technical Summary
Traditional chemical batteries are difficult to meet demand in high power density, long life and ultra-small power applications, and the energy conversion efficiency of nuclear batteries is low.
The β-radiation volt photovoltaic dual effect nuclear battery is used to further improve the energy conversion efficiency by combining β-radiation volt effect and photovoltaic effect released by radioisotope decay.
It significantly improves the energy conversion efficiency and stability of nuclear batteries, realizes high energy density and long life power supply, and is suitable for high-demand application scenarios.
Smart Images
Figure CN222851131U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of nuclear technology application, in particular to a β-radiation voltaic-photovoltaic dual-effect nuclear battery. Background Art
[0002] With the rapid development of modern science and technology, especially in the fields of aerospace, deep sea exploration, polar expeditions and micro-electromechanical systems, the demand for high power density, long life and ultra-small power sources is becoming increasingly urgent. Traditional chemical batteries can no longer meet the needs of these special applications in terms of energy density and life. Therefore, the development of new power technology with higher energy conversion efficiency and longer service life has become a hot topic in current research.
[0003] An isotope battery is a device that utilizes the energy released during the decay of radioactive isotopes or the thermal effect, light effect or ionization effect caused by it and converts it into electrical energy. Since the decay process of radioactive isotopes has its unique characteristics, it has the following advantages: First, the decay of radioactive isotopes is not affected by environmental factors such as temperature, pressure, magnetic field, chemical reaction, etc., so the isotope battery that relies on the decay of radioactive isotopes to generate electricity has extremely high working stability; secondly, the energy density released by the decay of isotopes used in isotope batteries is high, which is much higher than the energy density released by other commonly used energy sources. In addition, the radioactive isotopes used in isotope batteries have a long half-life, which ensures the long-term operation of isotope batteries and also makes it unnecessary for isotope batteries to frequently replenish materials or energy during operation. Therefore, isotope batteries are considered to be a new power technology with great potential.
[0004] In the study of isotope batteries, the beta radiation voltaic effect is an important energy conversion mechanism. When beta particles pass through a material, they interact with the electrons and nuclei in the material, resulting in a certain potential difference. This effect originates from the energy transfer process of beta particles in the material. They scatter or collide with electrons in the material, causing the movement and separation of electrons, thereby forming an electric current. At the same time, the photovoltaic effect is another important energy conversion method, which uses the photoelectric properties of semiconductor materials to directly convert light energy into electrical energy. Combining the beta radiation voltaic effect and the photovoltaic effect, we proposed a beta radiation voltaic photovoltaic dual effect nuclear battery. Utility Model Content
[0005] The main purpose of the utility model is to provide a β-radiation voltaic-photovoltaic dual-effect nuclear battery, which can effectively solve the problems in the background technology.
[0006] In order to achieve the above purpose, the technical solution adopted by the utility model is:
[0007] A beta radiation voltaic photovoltaic dual effect nuclear battery, comprising a 1-Al reflective layer, a radiation source and phosphor composite layer, a gallium nitride pin junction device and a battery protective shell, wherein the 1-Al reflective layer, the radiation source and phosphor composite layer and the gallium nitride pin junction device are all bonded to the inside of the battery protective shell by an adhesive material;
[0008] The internal structure of the GaN pin junction device is sequentially provided with a front indium tin metal oxide thin film electrode layer, a p-type aluminum gallium nitride cap layer, a p-type aluminum gallium nitride window layer, a p-type aluminum gallium nitride emitter layer, an aluminum gallium nitride intrinsic layer, an n-type aluminum gallium nitride base layer, an n-type aluminum gallium nitride backscattered layer, a gradient aluminum gallium nitride buffer layer, a gallium nitride substrate layer and a back metal electrode layer, and the radiation source and phosphor composite layer are arranged on the upper surface of the 1-Al reflective layer by electrophoretic deposition;
[0009] The lower surface of the back metal electrode layer is bonded with a conductive adhesive, the lower surface of the conductive adhesive is bonded with a metal plate, the lower surface of the metal plate is bonded with an adhesive material, and the lower surface of the adhesive material is bonded to the bottom wall inside the battery protective shell;
[0010] A battery positive lead is welded to the upper surface of the front indium tin metal oxide thin film electrode layer, a battery negative lead is welded to the upper surface of the metal plate, and a battery positive lead connection hole used in conjunction with the battery positive lead and a battery negative lead connection hole used in conjunction with the battery negative lead are provided on the outer surface of the battery protective shell.
[0011] Preferably, the radiation source and phosphor composite layer is made of 63Ni and ZnS:Cu,Al powder, and has a thickness of 10-150 μm.
[0012] Preferably, the battery protective shell is made of high molecular weight polyethylene plastic, and the thickness of the battery protective shell is 50-100 μm.
[0013] Preferably, the magnesium atom doping concentration of the p-type aluminum gallium nitride cap layer is 1×10 19 -9×10 19 cm -3 , with a thickness of 0.01-0.1 μm; the magnesium atom doping concentration of the p-type aluminum gallium nitride window layer is 1×10 16 -9×10 16 cm -3 , with a thickness of 0.05-0.1 μm; the magnesium atom doping concentration of the p-type aluminum gallium nitride emission layer is 1×10 18 -9×10 18 cm -3 , and its thickness is 0.1-0.5μm.
[0014] Preferably, the magnesium atom doping concentration of the p-type aluminum gallium nitride cap layer is preferably 3.5×10 19 cm -3 , and its preferred thickness is 0.04 μm; the preferred concentration of magnesium atoms doped in the p-type aluminum gallium nitride window layer is 3×10 16 cm -3 , and its preferred thickness is 0.08 μm; the preferred concentration of magnesium atoms doped in the p-type aluminum gallium nitride emission layer is 3×10 18 cm -3 , and its preferred thickness is 0.4 μm.
[0015] Preferably, the aluminum gallium nitride intrinsic layer has a thickness of 0.1-1 μm, and preferably has a thickness of 0.48 μm.
[0016] Preferably, the silicon atom doping concentration of the n-type aluminum gallium nitride base layer is 1×10 16 -9×10 16 cm -3 , and the preferred concentration is 3×10 16 cm -3 The thickness of the n-type aluminum gallium nitride base layer is 1-5 μm, and preferably 3 μm.
[0017] Preferably, the silicon atom doping concentration of the n-type aluminum gallium nitride backscattered layer is 1×10 18 -9×10 18 cm -3 , and the preferred concentration is 3×10 18 cm -3 The thickness of the n-type aluminum gallium nitride backscattered layer is 0.1-1 μm, and preferably 0.4 μm.
[0018] Preferably, the silicon atom doping concentration of the gradient aluminum gallium nitride buffer layer is 1×10 16 -9×10 16 cm -3 , and the preferred concentration is 4×10 16 cm -3 The thickness of the gradient aluminum gallium nitride buffer layer is 1-9 μm, and preferably 4 μm.
[0019] Preferably, the silicon atom doping concentration of the gallium nitride substrate layer is 1×10 20 -9×10 20 cm -3 , and the preferred concentration is 1×10 20 cm -3 , the thickness of the gallium nitride substrate layer is 1-350 μm.
[0020] Compared with the prior art, the utility model has the following beneficial effects:
[0021] 1. The β-radiovoltaic dual-effect nuclear battery provided by the utility model can not only utilize the β-particle energy released during the decay of radioactive isotopes and convert it into electrical energy through the β-radiovoltaic effect, but can also utilize the photovoltaic effect to further improve the energy conversion efficiency. It effectively utilizes the dual effects of radiovoltaic and photovoltaic, improves the output performance of the nuclear battery, solves the problem of low energy conversion efficiency of the nuclear battery, and significantly improves the energy conversion efficiency and stability of the nuclear battery.
[0022] 2. The β-radiation voltaic photovoltaic dual-effect nuclear battery provided by the utility model optimizes the quantum efficiency and carrier transport characteristics of the device by precisely controlling the doping concentration and thickness of each layer of gallium nitride, so that the battery can store more energy in a smaller volume and achieve high energy density. The use of radioactive isotopes with a long half-life as the radiation source ensures the long-term stable power supply capability of the battery and prolongs its service life.
[0023] 3. The beta radiation voltaic photovoltaic dual effect nuclear battery provided by the utility model has a nuclear battery protective shell made of corrosion-resistant high molecular polyethylene material, which effectively isolates the influence of the external environment and ensures that the battery can still work stably under extreme temperature, pressure and radiation conditions. Its closed design and sturdy packaging technology reduce the daily maintenance requirements, reduce maintenance frequency and costs.
[0024] 4. The technical route proposed by the utility model supports the large-area preparation of nuclear battery substrates, which can be flexibly cut into nuclear battery units of different sizes according to actual needs, meet the needs of diversified application scenarios, and facilitate large-scale production and application promotion. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 It is a schematic diagram of an axial section of a β-radiation voltaic-photovoltaic dual-effect nuclear battery of the utility model;
[0026] Figure 2 The utility model is a top view of a β-radiation voltaic-photovoltaic dual-effect nuclear battery.
[0027] In the figure: 1. 1-Al reflective layer; 2. Radioactive source and phosphor composite layer; 3. Front indium tin metal oxide thin film electrode layer; 4. p-type aluminum gallium nitride cap layer; 5. p-type aluminum gallium nitride window layer; 6. p-type aluminum gallium nitride emitter layer; 7. aluminum gallium nitride intrinsic layer; 8. n-type aluminum gallium nitride base layer; 9. n-type aluminum gallium nitride backscattered layer; 10. Gradient aluminum gallium nitride buffer layer; 11. Gallium nitride substrate layer; 12. Back metal electrode layer; 13. Conductive glue; 14. Metal plate; 15. Battery protective shell; 16. Adhesive material; 17. Battery positive lead; 18. Connection hole for battery positive lead; 19. Battery negative lead; 20. Connection hole for battery negative lead. DETAILED DESCRIPTION
[0028] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further described below in conjunction with specific implementation methods.
[0029] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "two ends", "one end", "the other end" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.
[0030] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0031] See also Figure 1-2 , the utility model provides a technical solution:
[0032] A β-radiation voltaic photovoltaic dual-effect nuclear battery, comprising a 1-Al reflective layer 1, a radiation source and phosphor composite layer 2, a gallium nitride pin junction device and a battery protective shell 15, wherein the 1-Al reflective layer 1, the radiation source and phosphor composite layer 2 and the gallium nitride pin junction device are all bonded to the inside of the battery protective shell 15 by an adhesive material 16;
[0033] The internal structure of the GaN pin junction device is provided with a front indium tin metal oxide thin film electrode layer 3, a p-type aluminum gallium nitride cap layer 4, a p-type aluminum gallium nitride window layer 5, a p-type aluminum gallium nitride emitter layer 6, an aluminum gallium nitride intrinsic layer 7, an n-type aluminum gallium nitride base layer 8, an n-type aluminum gallium nitride backscattered layer 9, a graded aluminum gallium nitride buffer layer 10, a gallium nitride substrate layer 11 and a back metal electrode layer 12 in sequence, and a radiation source and phosphor composite layer 2 is provided on the upper surface of the 1-Al reflective layer 1 by electrophoretic deposition;
[0034] The lower surface of the back metal electrode layer 12 is bonded with a conductive adhesive 13, the lower surface of the conductive adhesive 13 is bonded with a metal plate 14, the lower surface of the metal plate 14 is bonded with an adhesive material 16, and the lower surface of the adhesive material 16 is bonded to the bottom wall inside the battery protective shell 15;
[0035] A battery positive lead 17 is welded to the upper surface of the front indium tin metal oxide thin film electrode layer 3, a battery negative lead 19 is welded to the upper surface of the metal plate 14, and the outer surface of the battery protective shell 15 is provided with a battery positive lead connection hole 18 used in conjunction with the battery positive lead 17 and a battery negative lead connection hole 20 used in conjunction with the battery negative lead 19.
[0036] In this embodiment, the radiation source and phosphor composite layer 2 is made of 63Ni and ZnS:Cu,Al powder, and has a thickness of 10-150 μm.
[0037] In this embodiment, the battery protection shell 15 is made of high molecular weight polyethylene plastic, and the thickness of the battery protection shell 15 is 50-100 μm.
[0038] The magnesium atom doping concentration of the p-type aluminum gallium nitride cap layer 4 is 1×10 19 -9×10 19 cm -3 , with a thickness of 0.01-0.1 μm; the magnesium atom doping concentration of the p-type aluminum gallium nitride window layer 5 is 1×10 16 -9×10 16 cm -3 , with a thickness of 0.05-0.1 μm; the magnesium atom doping concentration of the p-type aluminum gallium nitride emitter layer 6 is 1×10 18 -9×10 18 cm -3 , with a thickness of 0.1-0.5 μm; the preferred concentration of magnesium atoms doped in the p-type aluminum gallium nitride cap layer 4 is 3.5×10 19 cm -3 , the preferred thickness is 0.04 μm; the preferred concentration of magnesium atoms doped in the p-type aluminum gallium nitride window layer 5 is 3×10 16 cm -3 , the preferred thickness is 0.08 μm; the preferred concentration of magnesium atoms doped in the p-type aluminum gallium nitride emitter layer 6 is 3×10 18 cm -3 , and its preferred thickness is 0.4 μm; the thickness of the aluminum gallium nitride intrinsic layer 7 is 0.1-1 μm, and the preferred thickness is 0.48 μm; the silicon atom doping concentration of the n-type aluminum gallium nitride base layer 8 is 1×10 16 -9×10 16 cm -3 , and the preferred concentration is 3×10 16 cm-3 The thickness of the n-type aluminum gallium nitride base layer 8 is 1-5 μm, and preferably 3 μm; the silicon atom doping concentration of the n-type aluminum gallium nitride backscattered layer 9 is 1×10 18 -9×10 18 cm -3 , and the preferred concentration is 3×10 18 cm -3 The thickness of the n-type aluminum gallium nitride backscatter layer 9 is 0.1-1 μm, and preferably 0.4 μm; the silicon atom doping concentration of the gradient aluminum gallium nitride buffer layer 10 is 1×10 16 -9×10 16 cm -3 , and the preferred concentration is 4×10 16 cm -3 The thickness of the gradient aluminum gallium nitride buffer layer 10 is 1-9 μm, and preferably 4 μm; the silicon atom doping concentration of the gallium nitride substrate layer 11 is 1×10 20 -9×10 20 cm -3 , and the preferred concentration is 1×10 20 cm -3 , the thickness of the gallium nitride substrate layer 11 is 1-350 μm.
[0039] The preparation steps of the above-mentioned β-radiation voltaic photovoltaic dual effect nuclear battery are as follows:
[0040] S1: Purchase a 4-inch diameter n-type highly doped gallium nitride substrate from the market. The n-type dopant is silicon, and the doped silicon atomic concentration ND is 1×10 20 / cm 3 The impurities on the surface of the gallium nitride substrate are cleaned with acetone, methanol, isopropanol and deionized water, and then the substrate is dried on a hot plate, and the gallium nitride substrate layer 11 is formed.
[0041] S2: Use MOCVD epitaxial growth equipment to complete the growth of high-precision n-type gallium arsenide epitaxial films based on gallium nitride.
[0042] Specifically, the following steps are included:
[0043] S201: Using MOCVD epitaxial growth equipment to vapor phase epitaxially grow a graded aluminum gallium nitride buffer layer 10 on the upper surface of the gallium nitride substrate layer 11 in a thermal decomposition reaction manner. The silicon atom doping concentration of the graded aluminum gallium nitride buffer layer 10 is 1×10 16 -9×10 16 cm -3 , and the preferred concentration is 4×10 16 cm -3 The thickness of the graded aluminum gallium nitride buffer layer 10 is 1-9 μm, and preferably 4 μm.
[0044] S202: Using a MOCVD epitaxial growth equipment system to vapor phase epitaxially grow an n-type aluminum gallium nitride backscattered layer 9 on the upper surface of the graded aluminum gallium nitride buffer layer 10 in a thermal decomposition reaction manner. The silicon atom doping concentration of the n-type aluminum gallium nitride backscattered layer 9 is 1×10 18 -9×10 18 cm -3 , and the preferred concentration is 3×10 18 cm -3 The thickness of the n-type aluminum gallium nitride backscattered layer 9 is 0.1-1 μm, and preferably 0.4 μm.
[0045] S203: Using MOCVD epitaxial growth equipment system to grow n-type aluminum gallium nitride base layer 8 on the upper surface of n-type aluminum gallium nitride backscattered layer 9 by thermal decomposition reaction. The silicon atom doping concentration of n-type aluminum gallium nitride base layer 8 is 1×10 16 -9×10 16 cm -3 , and the preferred concentration is 3×10 16 cm -3 The thickness of the n-type aluminum gallium nitride base layer 8 is 1-5 μm, and preferably 3 μm.
[0046] S204: Using MOCVD epitaxial growth equipment system to grow AlGaN intrinsic layer 7 on the upper surface of n-type AlGaN base layer 8 by vapor phase epitaxy in a thermal decomposition reaction manner. The thickness of AlGaN intrinsic layer 7 is 0.1-1 μm, and preferably 0.48 μm.
[0047] S3: Use MOCVD epitaxial growth equipment to complete the growth of high-precision p-type GaN-based epitaxial thin films.
[0048] Specifically, the following steps are included:
[0049] S301: Using an MOCVD epitaxial growth equipment system to vapor phase epitaxially grow a p-type aluminum gallium nitride emitter layer 6 on the upper surface of the aluminum gallium nitride intrinsic layer 7 by thermal decomposition reaction. The magnesium atom doping concentration of the p-type aluminum gallium nitride emitter layer 6 is 1×10 18 -9×10 18 cm -3 , and the preferred concentration is 3×10 18 cm -3 The thickness of the p-type aluminum gallium nitride emission layer 6 is 0.1-0.5 μm, and its preferred thickness is 0.4 μm.
[0050] S302: Using an MOCVD epitaxial growth equipment system to perform vapor phase epitaxial growth of a p-type aluminum gallium nitride window layer 5 on the upper surface of the p-type aluminum gallium nitride emitter layer 6 by means of a thermal decomposition reaction. The magnesium atom doping concentration of the p-type aluminum gallium nitride window layer 5 is 1×1016 -9×10 16 cm -3 The preferred concentration is 3×10 16 cm -3 The thickness of the p-type aluminum gallium nitride window layer 5 is 0.05-0.1 μm, and preferably 0.08 μm.
[0051] S303: Using an MOCVD epitaxial growth equipment system to vapor phase epitaxially grow a p-type aluminum gallium nitride cap layer 4 on the upper surface of the p-type aluminum gallium nitride window layer 5 in a thermal decomposition reaction manner. The magnesium atom doping concentration of the p-type aluminum gallium nitride cap layer 4 is 1×10 19 -9×10 19 cm -3 , and the preferred concentration is 3.5×10 19 cm -3 The thickness of the p-type aluminum gallium nitride cap layer 4 is 0.01-0.1 μm, and preferably 0.04 μm.
[0052] S4: Use the industrial standard wet cleaning process (RCA) to remove impurities on the upper surface of the p-type aluminum gallium nitride cap layer 4, and dry it on a hot plate; then, use an electron beam indium tin metal oxide (ITO) evaporation machine to introduce oxygen ions and use electron beam heating vacuum evaporation to prepare the ITO film, that is, use a high-energy electron beam to bombard the surface of the mixed raw material of indium and tin oxide, so that the evaporated Sn and In atoms are ionized into positive ions and accelerated in the electric field to gain kinetic energy. At the same time, oxygen ions have a higher reactivity than oxygen atoms, so that they sublimate, and then deposit on the upper surface of the p-type aluminum gallium nitride cap layer 4 to form a high-quality front indium tin metal oxide thin film electrode layer 3. The thickness of the front indium tin metal oxide thin film electrode layer 3 is 7-10nm, and the preferred thickness is 8nm. Finally, use a coating machine to apply photoresist on the upper surface of the front indium tin metal oxide thin film electrode layer 3 to form a protective film.
[0053] S5: Using an electron beam metal evaporation machine, evaporate the back metal electrode layer 12 on the lower surface of the gallium nitride substrate layer 11. Evaporate the Zr metal layer on the lower surface of the gallium nitride substrate layer 11, and then evaporate Au metal on the Zr metal layer to form a Zr / Au composite metal layer. The thickness of the Zr metal layer and the Au metal layer are 30nm and 300nm respectively. Finally, the prepared device is subjected to high temperature annealing and sintering to form a good ohmic contact.
[0054] S6: Electrophoretic deposition (EPD) is used to form a radiation source and phosphor composite layer 2 on the upper surface of the front indium tin metal oxide thin film electrode layer 3. Before performing EPD, a photoresist needs to be applied on the upper surface of the front indium tin metal oxide thin film electrode layer 3 using a coating machine, and a specific deposition pentagon is obtained by photolithography. The substrate formed by the gallium nitride pin junction device is placed in a container, and an electrolyte solution containing radioluminescent phosphor particles and radioactive isotope particles dispersed therein is filled in the container, and then the n-terminal electrode of the gallium nitride pin junction device is connected to the negative electrode of the DC power supply, and the platinum electrode is connected to the positive electrode of the power supply. Electrophoretic deposition (EPD) is performed by applying voltage to the substrate formed by the gallium nitride pin junction device and the electrode to form a radiation source and phosphor composite layer 2. The electrolyte solution is a conductive solution composed of an isopropyl alcohol (IPA) solution and a Mg(NO3)2·6H20 solution. Finally, after electrophoretic deposition, it is dried, and aluminum foil is bonded to the upper surface of the radiation source and phosphor composite layer 2 using a thin epoxy resin adhesive to form an Al reflective layer 1.
[0055] S7: The lower surface of the back metal electrode layer 12 is bonded to the metal plate 14 through the conductive adhesive 13. The upper surface of the front indium tin metal oxide film electrode layer 3 is welded with a wire to form a positive lead 17 of the battery, and the upper surface of the metal plate 14 is welded with a wire to form a negative lead 19 of the battery.
[0056] S8: The entire device is bonded to the inside of the battery protection shell 15 by the adhesive material 16. The battery protection shell 15 is made of high molecular polyethylene plastic with a thickness of 50-100 μm. The outer surface of the battery protection shell 15 is provided with a connection hole 18 for the battery positive lead used in conjunction with the battery positive lead 17 and a connection hole 20 for the battery negative lead used in conjunction with the battery negative lead 19.
[0057] It should be noted that the utility model provides a β-radiation voltaic-photovoltaic dual-effect nuclear battery substrate. In specific practical applications, the battery substrate can be cut into a β-radiation voltaic-photovoltaic dual-effect nuclear battery according to actual needs. For example, the cross-sectional size of the nuclear battery substrate prepared in the utility model is 4 inches. If a micro nuclear battery with a cross-sectional size of 1cm×1cm is obtained, 30-40 nuclear battery units can be obtained on the basis of fully utilizing the substrate area.
[0058] The above shows and describes the basic principle and main features of the utility model and the advantages of the utility model. Those skilled in the art should understand that the utility model is not limited by the above embodiments. The above embodiments and descriptions are only for explaining the principle of the utility model. Without departing from the spirit and scope of the utility model, the utility model may have various changes and improvements, which fall within the scope of the utility model to be protected. The scope of protection claimed by the utility model is defined by the attached claims and their equivalents.
Claims
1. A β-radiation voltaic-photovoltaic dual-effect nuclear battery, characterized in that: It comprises a 1-Al reflective layer (1), a radiation source and phosphor composite layer (2), a gallium nitride pin junction device and a battery protective shell (15), wherein the 1-Al reflective layer (1), the radiation source and phosphor composite layer (2) and the gallium nitride pin junction device are all bonded to the inside of the battery protective shell (15) by using an adhesive material (16); The internal structure of the gallium nitride pin junction device is provided with a front indium tin metal oxide thin film electrode layer (3), a p-type aluminum gallium nitride cap layer (4), a p-type aluminum gallium nitride window layer (5), a p-type aluminum gallium nitride emission layer (6), an aluminum gallium nitride intrinsic layer (7), an n-type aluminum gallium nitride base layer (8), an n-type aluminum gallium nitride backscattered layer (9), a gradient aluminum gallium nitride buffer layer (10), a gallium nitride substrate layer (11) and a back metal electrode layer (12) in sequence, and the radiation source and phosphor composite layer (2) is provided on the upper surface of the 1-Al reflective layer (1) by electrophoretic deposition; The lower surface of the back metal electrode layer (12) is bonded with a conductive adhesive (13), the lower surface of the conductive adhesive (13) is bonded with a metal plate (14), the lower surface of the metal plate (14) is bonded with an adhesive material (16), and the lower surface of the adhesive material (16) is bonded to the bottom wall inside the battery protective shell (15); A battery positive lead (17) is welded to the upper surface of the front indium tin metal oxide thin film electrode layer (3), a battery negative lead (19) is welded to the upper surface of the metal plate (14), and a battery positive lead connection hole (18) for use with the battery positive lead (17) and a battery negative lead connection hole (20) for use with the battery negative lead (19) are provided on the outer surface of the battery protective shell (15).
2. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The battery protection shell (15) is made of high molecular weight polyethylene plastic, and the thickness of the battery protection shell (15) is 50-100 μm.
3. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The magnesium atom doping concentration of the p-type aluminum gallium nitride cap layer (4) is 1×10 19 -9×10 19 cm -3 , with a thickness of 0.01-0.1 μm; the magnesium atom doping concentration of the p-type aluminum gallium nitride window layer (5) is 1×10 16 -9×10 16 cm -3 , with a thickness of 0.05-0.1 μm; the magnesium atom doping concentration of the p-type aluminum gallium nitride emission layer (6) is 1×10 18 -9×10 18 cm -3 , and its thickness is 0.1-0.5μm.
4. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The magnesium atom doping concentration of the p-type aluminum gallium nitride cap layer (4) is 3.5×10 19 cm -3 The magnesium atom doping concentration of the p-type aluminum gallium nitride window layer (5) is 3×10 16 cm -3 The magnesium atom doping concentration of the p-type aluminum gallium nitride emission layer (6) is 3×10 18 cm -3 .
5. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The thickness of the aluminum gallium nitride intrinsic layer (7) is 0.1-1 μm.
6. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The silicon atom doping concentration of the n-type aluminum gallium nitride base layer (8) is 1×10 16 -9×10 16 cm -3 The thickness of the n-type aluminum gallium nitride base layer (8) is 1-5 μm.
7. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The silicon atom doping concentration of the n-type aluminum gallium nitride backscattered layer (9) is 1×10 18 -9×10 18 cm -3 The thickness of the n-type aluminum gallium nitride backscattered layer (9) is 0.1-1 μm.
8. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The silicon atom doping concentration of the gradient aluminum gallium nitride buffer layer (10) is 1×10 16 -9×10 16 cm -3 The thickness of the gradient aluminum gallium nitride buffer layer (10) is 1-9 μm.
9. A β-radiation voltaic-photovoltaic dual-effect nuclear battery according to claim 1, characterized in that: The silicon atom doping concentration of the gallium nitride substrate layer (11) is 1×10 20 -9×10 20 cm -3 The gallium nitride substrate layer (11) has a thickness of 1-350 μm.