Furnace tube end cover and silicon wafer coating equipment

Abstract

The utility model provides a furnace tube end cover and silicon wafer coating equipment, the furnace tube end cover is provided with a first exhaust port and a second exhaust port, the first exhaust port and the second exhaust port are respectively located at two sides of a vertical plane where the center of the furnace tube end cover is located, and the first exhaust port and the second exhaust port are symmetrically arranged relative to the vertical plane where the center of the furnace tube end cover is located; and the first exhaust port and the second exhaust port are used for exhausting gas in the furnace tube. The first exhaust port and the second exhaust port can disperse negative pressure, avoid excessive concentration of the negative pressure and reduce the pressure difference of the negative pressure between the exhaust ports and the edge of the furnace tube, so that the uniformity of the negative pressure is improved, gas can be exhausted only by flowing to the nearest first exhaust port or the second exhaust port, the distance that the gas does not need to flow in the radial direction is reduced, and the efficiency is improved. Therefore, the flow direction of the gas is more parallel to the axial direction of the furnace tube, so that the uniformity of the gas flowing through the silicon wafers is improved, the deposition rate values of the gas at all positions of all the silicon wafers are closer, and the coating uniformity is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer manufacturing, and in particular to a furnace tube end cover and silicon wafer coating equipment. Background Art

[0002] Currently, in the process of manufacturing silicon wafers, it is usually necessary to coat the silicon wafers. One coating method is: the silicon wafer is placed in a furnace tube through a carrier, and the reaction gas enters the furnace tube from the gas nozzle at the front end of the furnace tube. When flowing through the silicon wafer, it chemically reacts with the surface of the silicon wafer to form a thin film, and then is discharged from the exhaust port at the rear end of the furnace tube.

[0003] In the conventional related technology, only one exhaust port is arranged at the tail end of the furnace tube, and the exhaust port discharges the reaction gas through negative pressure. However, this method will cause the negative pressure at the tail end of the furnace tube to be too concentrated, and the pressure difference between the exhaust port and the edge of the furnace tube is large, resulting in low uniformity of the negative pressure. As a result, the reaction gas at the edge of the furnace tube needs to flow radially for a long distance at the tail end of the furnace tube before it can be discharged through the exhaust port, which in turn causes the flow direction of the reaction gas in the furnace tube to be difficult to be parallel to the axial direction of the furnace tube, thereby reducing the uniformity of the reaction gas flowing through the silicon wafer, causing the difference in the deposition rate values ​​of the reaction gas at various positions of the silicon wafer to become larger, and ultimately resulting in the problem of low coating uniformity. Utility Model Content

[0004] In view of this, it is necessary to provide a furnace tube end cover and silicon wafer coating equipment that can improve the uniformity of negative pressure at the tail end of the furnace tube, aiming to improve the coating uniformity of the silicon wafer.

[0005] In one embodiment of the present disclosure, a furnace tube end cover is provided, which is applied to a furnace tube. The furnace tube is used to accommodate a carrier carrying silicon wafers. The furnace tube end cover is provided with at least a first exhaust port and a second exhaust port. The first exhaust port and the second exhaust port are respectively located on both sides of an imaginary vertical plane where the center of the furnace tube end cover is located. The imaginary vertical plane is perpendicular to the surface of the furnace tube end cover. The first exhaust port and the second exhaust port are symmetrically arranged with respect to the imaginary vertical plane where the center of the furnace tube end cover is located. The first exhaust port and the second exhaust port are used to exhaust gas in the furnace tube. The furnace tube end cover is also provided with auxiliary heat pipe holes, which are respectively arranged at the top and bottom of the furnace tube end cover. The furnace tube end cover is also provided with electrode holes.

[0006] The furnace tube end cover has more than one exhaust port through the first exhaust port and the second exhaust port, and the first exhaust port and the second exhaust port are symmetrically arranged on both sides of the imaginary vertical plane, which not only makes the distribution of the first exhaust port and the second exhaust port more uniform, but also makes the flow direction of the gas near the horizontal center plane in the furnace tube more parallel to the axial direction of the furnace tube, so as to adapt to the size design of the carrier. Compared with the method of having only one exhaust port in the related art, the first exhaust port and the second exhaust port can disperse the negative pressure, avoid excessive concentration of negative pressure, reduce the pressure difference between the exhaust port and the edge of the furnace tube, thereby improving the uniformity of the negative pressure, so that the gas only needs to flow to the nearest first exhaust port or second exhaust port to be discharged, reducing the distance that the gas does not need to flow radially, and then making the flow direction of the gas more parallel to the axial direction of the furnace tube, thereby improving the uniformity of the gas flowing through the silicon wafer, so that the deposition rate value of the gas at each position of each silicon wafer is closer, thereby making the thin film formed on the surface of the silicon wafer more uniform, and improving the coating uniformity. In addition, the furnace tube end cover is installed with a heating tube for heating the gas in the furnace tube through the auxiliary heating tube hole, and an electrode is installed through the electrode hole to connect the power supply to energize the carrier, so that the gas in the furnace tube can react chemically with the surface of the silicon wafer to form a thin film.

[0007] In some embodiments, the center of the first exhaust port and the center of the second exhaust port are both located above an imaginary horizontal plane where the center of the furnace tube end cover is located.

[0008] In some embodiments, the centers of the first exhaust port and the second exhaust port are located on an imaginary horizontal plane where the center of the furnace tube end cover is located.

[0009] In some embodiments, the outer contour of the cross section of the furnace tube end cover is circular, and the first exhaust port and the second exhaust port are circular holes.

[0010] In some embodiments, the minimum distance between any point of the carrier in the projection area of ​​the furnace tube end cover and the edge of the first exhaust port or the second exhaust port is less than or equal to half of the radius of the furnace tube end cover.

[0011] In some embodiments, the furnace tube end cover is further provided with a third exhaust port, and the third exhaust port is located between the first exhaust port and the second exhaust port and is located on an imaginary vertical plane.

[0012] In some embodiments, the furnace tube end cover is further provided with a third exhaust port, and the first exhaust port, the second exhaust port and the third exhaust port are distributed as three vertices of a triangle.

[0013] In some embodiments, the furnace tube end cover is further provided with a sensor hole, and the sensor hole is used to install a sensor for sensing the gas temperature in the furnace tube.

[0014] In some embodiments, the furnace tube end cover is also provided with an observation window.

[0015] In one embodiment of the present disclosure, a silicon wafer coating device is also provided, including a furnace tube, a carrier and the furnace tube end cover in any of the above embodiments, the furnace tube end cover is arranged at one end of the furnace tube, and the carrier is arranged in the furnace tube and is used to carry the silicon wafer.

[0016] The silicon wafer coating equipment has more than one exhaust port through the first exhaust port and the second exhaust port, and the first exhaust port and the second exhaust port are symmetrically arranged on both sides of the imaginary vertical plane, which not only makes the distribution of the first exhaust port and the second exhaust port more uniform, but also makes the flow direction of the gas near the horizontal center plane in the furnace tube more parallel to the axial direction of the furnace tube, so as to adapt to the size design of the carrier. Compared with the method of having only one exhaust port in the related art, the first exhaust port and the second exhaust port can disperse the negative pressure, avoid excessive concentration of negative pressure, reduce the pressure difference between the exhaust port and the edge of the furnace tube, thereby improving the uniformity of the negative pressure, so that the gas only needs to flow to the nearest first exhaust port or second exhaust port to be discharged, reducing the distance that the gas does not need to flow radially, and then making the flow direction of the gas more parallel to the axial direction of the furnace tube, thereby improving the uniformity of the gas flowing through the silicon wafer, so that the deposition rate value of the gas at each position of each silicon wafer is closer, thereby making the thin film formed on the surface of the silicon wafer more uniform, and improving the coating uniformity. In addition, the silicon wafer coating equipment installs heating tubes for local heating through the auxiliary heating tube holes, and also installs electrodes through the electrode holes to connect the power supply to energize the carrier, which can realize the chemical reaction between the gas in the furnace tube and the surface of the silicon wafer to form a thin film. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is an exploded view of a silicon wafer coating device in one embodiment of the present disclosure.

[0018] Figure 2 It is a front view of the furnace tube end cover in one embodiment of the present disclosure.

[0019] Figure 3 for Figure 1 Cross-sectional view of the middle furnace tube and carrier.

[0020] Figure 4 It is a front view of a furnace tube end cover in another embodiment of the present disclosure.

[0021] Figure 5 It is a front view of a furnace tube end cover in another embodiment of the present disclosure.

[0022] Figure 6 It is a front view of a furnace tube end cover in another embodiment of the present disclosure.

[0023] Main component symbols

[0024] Furnace tube end cap 100

[0025] Silicon wafer coating equipment 200

[0026] Furnace pipe 201

[0027] Vehicle 202

[0028] The first exhaust port 10

[0029] Second exhaust port 20

[0030] The third exhaust port 30

[0031] Auxiliary heat pipe hole 40

[0032] Electrode hole 50

[0033] Sensor hole 60

[0034] Observation window 70 DETAILED DESCRIPTION

[0035] The technical solution of the present disclosure will be described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments.

[0036] It should be noted that when a component is referred to as being "provided on", "connected to" or "fixed to" another component, it may be directly on the other component or there may be a central component. The term "horizontal" as used herein refers to a vertical or horizontal state within a certain error range, not vertical or horizontal in an absolute sense. The terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance. The term "coincidence" refers to coincidence within a certain error range, not coincidence in an absolute sense.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure pertains. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure. The term "or / and" used herein includes any and all combinations of one or more of the related listed items.

[0038] Currently, in the process of manufacturing silicon wafers, it is usually necessary to coat the silicon wafers. One coating method is: the silicon wafer is placed in a furnace tube through a carrier, and the reaction gas enters the furnace tube from the gas nozzle at the front end of the furnace tube. When flowing through the silicon wafer, it chemically reacts with the surface of the silicon wafer to form a thin film, and then is discharged from the exhaust port at the rear end of the furnace tube.

[0039] In the conventional related technology, only one exhaust port is arranged at the tail end of the furnace tube, and the exhaust port discharges the reaction gas through negative pressure. However, this method will cause the negative pressure at the tail end of the furnace tube to be too concentrated, and the pressure difference between the exhaust port and the edge of the furnace tube is large, resulting in low uniformity of the negative pressure. As a result, the reaction gas at the edge of the furnace tube needs to flow radially for a long distance at the tail end of the furnace tube before it can be discharged through the exhaust port, which in turn causes the flow direction of the reaction gas in the furnace tube to be difficult to be parallel to the axial direction of the furnace tube, thereby reducing the uniformity of the reaction gas flowing through the silicon wafer, causing the difference in the deposition rate values ​​of the reaction gas at various positions of the silicon wafer to become larger, and ultimately resulting in the problem of low coating uniformity.

[0040] In view of this, it is necessary to provide a furnace tube end cover and silicon wafer coating equipment that can improve the uniformity of negative pressure at the tail end of the furnace tube, aiming to improve the coating uniformity of the silicon wafer. The furnace tube end cover is applied to the furnace tube, and the furnace tube is used to accommodate a carrier carrying silicon wafers. The furnace tube end cover is provided with at least a first exhaust port and a second exhaust port. The first exhaust port and the second exhaust port are respectively located on both sides of an imaginary vertical plane where the center of the furnace tube end cover is located. The imaginary vertical plane is perpendicular to the surface of the furnace tube end cover. The first exhaust port and the second exhaust port are symmetrically arranged with respect to the imaginary vertical plane where the center of the furnace tube end cover is located. The first exhaust port and the second exhaust port are used to discharge the gas in the furnace tube. The furnace tube end cover is also provided with auxiliary heat pipe holes, which are respectively arranged at the top and bottom of the furnace tube end cover. The furnace tube end cover is also provided with electrode holes, which are used to install electrodes.

[0041] The furnace tube end cover has more than one exhaust port through the first exhaust port and the second exhaust port, and the first exhaust port and the second exhaust port are symmetrically arranged on both sides of the imaginary vertical plane, which not only makes the distribution of the first exhaust port and the second exhaust port more uniform, but also makes the flow direction of the gas near the horizontal center plane in the furnace tube more parallel to the axial direction of the furnace tube, so as to adapt to the size design of the carrier. Compared with the method of having only one exhaust port in the related art, the first exhaust port and the second exhaust port can disperse the negative pressure, avoid excessive concentration of negative pressure, reduce the pressure difference between the exhaust port and the edge of the furnace tube, thereby improving the uniformity of the negative pressure, so that the gas only needs to flow to the nearest first exhaust port or second exhaust port to be discharged, reducing the distance that the gas does not need to flow radially, and then making the flow direction of the gas more parallel to the axial direction of the furnace tube, thereby improving the uniformity of the gas flowing through the silicon wafer, so that the deposition rate value of the gas at each position of each silicon wafer is closer, thereby making the thin film formed on the surface of the silicon wafer more uniform, and improving the coating uniformity. In addition, the furnace tube end cover is equipped with a heating tube for local heating through the auxiliary heating tube hole, and an electrode is installed through the electrode hole to connect the power supply to energize the carrier, so that the gas in the furnace tube can react chemically with the surface of the silicon wafer to form a thin film.

[0042] Combine the following Figures 1 to 6, some embodiments of the present disclosure are described in detail. In the absence of conflict, the following embodiments and features of the embodiments can be combined with each other.

[0043] like Figures 1 to 3 As shown, a furnace tube end cover 100 and a silicon wafer coating device 200 are provided in an embodiment of the present disclosure. The silicon wafer coating device 200 comprises a furnace tube 201, a carrier 202 and a furnace tube end cover 100. The carrier 202 is arranged in the furnace tube 201 and is used to carry silicon wafers. The furnace tube end cover 100 is arranged at the tail end of the furnace tube 201. The front end of the furnace tube 201 is for gas to enter. The gas flows through the silicon wafers in the carrier 202 to form a thin film on the surface of the silicon wafers. The gas flowing through the silicon wafers is discharged from the furnace tube 201 through the furnace tube end cover 100.

[0044] As an illustrative example, the silicon wafer coating equipment 200 is a tubular PECVD (Plasma Enhance Chemical Vapor Deposition) equipment, the carrier 202 is a graphite boat, and the gas in the furnace tube 201 is a reaction gas, such as silane, ammonia, silicon dioxide, etc. The reaction gas is excited by the electric field generated when the carrier 202 is powered on and reacts with the surface of the silicon wafer, thereby forming a desired thin film.

[0045] It should be noted that the length direction of the carrier 202 is parallel to the axial direction L of the furnace tube 201, and multiple silicon wafers are arranged in the carrier 202 along the length direction of the carrier 202. Since the reaction gas enters from one end of the furnace tube 201 and is discharged from the other end of the furnace tube 201, the more the flow direction of the reaction gas in the furnace tube 201 is parallel to the axial direction L of the furnace tube 201, the more the distribution uniformity of the reaction gas in the furnace tube 201 can be maintained, so that the deposition rate values ​​generated by the reaction gas at each position of each silicon wafer are closer, thereby making the thin film formed on the surface of the silicon wafer more uniform, that is, the coating uniformity is higher.

[0046] However, at the rear end of the furnace tube 201, since the furnace tube end cover 100 needs to exhaust the reaction gas through negative pressure, the uniformity of the negative pressure will affect the flow direction of the reaction gas in the furnace tube 201, and thus affect the distribution uniformity of the reaction gas in the furnace tube 201, and ultimately affect the coating uniformity.

[0047] Therefore, in order to improve the uniformity of negative pressure, the furnace tube end cover 100 provided in the present disclosure is provided with a first exhaust port 10 and a second exhaust port 20, and the first exhaust port 10 and the second exhaust port 20 are respectively located on both sides of an imaginary vertical plane A where the center M of the furnace tube end cover 100 is located, and the first exhaust port 10 and the second exhaust port 20 are symmetrically arranged with respect to the imaginary vertical plane A, and the first exhaust port 10 and the second exhaust port 20 simultaneously generate negative pressure to discharge the gas in the furnace tube 201.

[0048] The furnace tube end cover 100 provided by the present disclosure has more than one exhaust port through the first exhaust port 10 and the second exhaust port 20, and the first exhaust port 10 and the second exhaust port 20 are symmetrically arranged on both sides of the imaginary vertical plane A, so that the distribution of the first exhaust port 10 and the second exhaust port 20 is more uniform. Compared with the method of having only one exhaust port in the related art, the first exhaust port 10 and the second exhaust port 20 can disperse the negative pressure, avoid excessive concentration of negative pressure, reduce the pressure difference between the exhaust port and the edge of the furnace tube, thereby improving the uniformity of the negative pressure, so that the reaction gas only needs to flow to the nearest first exhaust port 10 or second exhaust port 20 to be discharged, reducing the distance that the reaction gas does not need to flow in the radial direction, thereby making the flow direction of the reaction gas more parallel to the axial direction L of the furnace tube, thereby improving the uniformity of the reaction gas flowing through the silicon wafer, so that the deposition rate value generated by the reaction gas at each position of each silicon wafer is closer, thereby making the thin film formed on the surface of the silicon wafer more uniform, and improving the coating uniformity.

[0049] In addition, it should be noted that the width direction of the carrier 202 is horizontally set, and the height direction of the carrier 202 is vertically set. The width W of the carrier 202 is greater than the height H of the carrier 202, that is, the lateral dimension of the cross section of the carrier 202 is larger than the longitudinal dimension. Therefore, the silicon wafers in the carrier 202 are more in contact with the reaction gas near the horizontal center plane U in the furnace tube 201, and less in contact with the reaction gas at the top and bottom of the furnace tube 201. The flow direction of the reaction gas near the horizontal center plane U in the furnace tube 201 should be more parallel to the axial direction L of the furnace tube 201, and the reaction gas at the top and bottom of the furnace tube 201 does not contact the silicon wafers in the carrier 202, so even if the flow direction is not parallel to the axial direction L, it will not have a significant impact on the coating. Therefore, the furnace tube end cover 100 provided in the present invention is symmetrically arranged on both sides of the imaginary vertical plane A through the first exhaust port 10 and the second exhaust port 20, so that the first exhaust port 10 and the second exhaust port 20 are distributed in the horizontal direction, so that the flow direction of the reaction gas close to the horizontal center plane U in the furnace tube 201 is more parallel to the axial direction L of the furnace tube 201, so as to adapt to the size design of the carrier 202, thereby improving the uniformity of the reaction gas flowing through the silicon wafer, so that the deposition rate values ​​generated by the reaction gas at each position of each silicon wafer are closer, thereby improving the uniformity of the coating.

[0050] It can be understood that in other embodiments, if the width W of the carrier 202 is smaller than the height H of the carrier 202, that is, the lateral dimension of the cross section of the carrier 202 is smaller than the longitudinal dimension, then the first exhaust port 10 and the second exhaust port 20 are symmetrically arranged on both sides of the imaginary horizontal plane B where the center M of the furnace tube end cover 100 is located, so that the first exhaust port 10 and the second exhaust port 20 are distributed in the vertical direction to adapt to the size design of the carrier 202.

[0051] In some embodiments, Figure 2As shown, since the furnace tube end cover 100 needs to be provided with other components, the centers of the first exhaust port 10 and the second exhaust port 20 are located above the imaginary horizontal plane B where the center M of the furnace tube end cover 100 is located, so as to free up enough area on the furnace tube end cover 100 to provide other components.

[0052] In some embodiments, Figure 4 As shown, the centers of the first exhaust port 10 and the second exhaust port 20 are located on the imaginary horizontal plane B where the center M of the furnace tube end cover 100 is located, so that the first exhaust port 10 and the second exhaust port 20 are not only symmetrically arranged with respect to the imaginary vertical plane A, but also symmetrically arranged with respect to the imaginary horizontal plane B, that is, the first exhaust port 10 and the second exhaust port 20 are symmetrically arranged with respect to the center M of the furnace tube end cover 100, thereby improving the symmetry of the first exhaust port 10 and the second exhaust port 20, and further improving the uniformity of the negative pressure.

[0053] In some embodiments, in addition to the first exhaust port 10 and the second exhaust port 20, the furnace tube end cover 100 may be provided with other number of exhaust ports. For example, the furnace tube end cover 100 is also provided with a third exhaust port 30. The position of the third exhaust port 30 may be set as needed as long as the uniformity of the negative pressure can be improved.

[0054] For example, Figure 5 As shown, the third exhaust port 30 is located between the first exhaust port 10 and the second exhaust port 20, and the center of the third exhaust port 30 is located on the imaginary vertical plane A. The first exhaust port 10, the second exhaust port 20 and the third exhaust port 30 simultaneously generate negative pressure to further disperse the negative pressure and improve the uniformity of the negative pressure.

[0055] For example, Figure 6 As shown, the first exhaust port 10, the second exhaust port 20 and the third exhaust port 30 are distributed at the three vertices of a triangle, so that the first exhaust port 10, the second exhaust port 20 and the third exhaust port 30 can not only disperse the negative pressure in the horizontal square, but also disperse the negative pressure in the vertical direction, thereby further improving the uniformity of the negative pressure.

[0056] In some embodiments, the outer contour of the cross section of the furnace tube end cover 100 is circular to accommodate the furnace tube 201 with a circular cross section. The first exhaust port 10 and the second exhaust port 20 are circular holes for easy processing and connection to pipelines.

[0057] In some embodiments, Figure 4 As shown, the radial dimension of the first exhaust port 10 or the second exhaust port 20 is configured as follows: the minimum distance D between any point of the carrier 202 within the projection area S of the furnace tube end cover 100 and the edge of the first exhaust port 10 or the second exhaust port 20 is less than or equal to half of the radius R of the furnace tube end cover 100.

[0058] For example, a point P at the corner of the projection area S is closer to the first exhaust port 10, so the reaction gas at the point P will be discharged through the first exhaust port 10, and the minimum distance D between the point P and the edge of the first exhaust port 10 is less than or equal to 0.5R, so that the radial flow distance of the reaction gas is small enough, and then the flow direction of the reaction gas in the furnace tube 201 is sufficiently parallel to the axial direction L of the furnace tube 201, so as to improve the uniformity of the coating.

[0059] In some embodiments, Figure 1 and Figure 2 As shown, the furnace tube end cover 100 is further provided with an auxiliary heat pipe hole 40, in which a heating pipe is installed, and the heating pipe is used to enhance the local heating effect in the furnace tube, such as a heating lamp. Optionally, the silicon wafer in the carrier 202 is exposed through the top and bottom of the carrier 202, so the auxiliary heat pipe holes 40 are distributed at the top and bottom of the furnace tube end cover 100, so that the light of the heating lamp can irradiate the silicon wafer and enhance the heating effect.

[0060] In some embodiments, the furnace tube end cover 100 is further provided with an electrode hole 50 , and the electrode hole 50 is used to install an electrode to connect a power source so as to energize the carrier 202 to ionize the reaction gas.

[0061] In some embodiments, the furnace tube end cover 100 is further provided with a sensor hole 60, and the sensor hole 60 is used to install a sensor for sensing the temperature of the reaction gas in the furnace tube. Optionally, there are two sensor holes 60 and they are arranged on both sides of the imaginary vertical plane A, and each sensor hole 60 is installed with a sensor, one of which is used and the other is used as a backup, so that when the sensor in use fails, the backup sensor can be activated in time to ensure the real-time temperature measurement. As an illustrative example, the sensor installed in the sensor hole 60 is a thermocouple.

[0062] In some embodiments, the furnace tube end cover 100 is further provided with an observation window 70, which facilitates the user to observe the situation inside the furnace tube 201. Optionally, there are two observation windows 70 symmetrically arranged on both sides of the imaginary vertical plane A, so that the user can observe the situation inside the furnace tube 201 from both sides.

[0063] In some embodiments, the silicon wafer coating device 200 includes a plurality of exhaust pipes for connecting to the exhaust ports, for example, the silicon wafer coating device 200 includes a first exhaust pipe for connecting to the first exhaust port 10, a second exhaust pipe for connecting to the second exhaust port 20, and a second exhaust pipe for connecting to the second exhaust port 20. The silicon wafer coating device 200 also includes one or more of an auxiliary heat pipe, an electrode, and a sensor. The auxiliary heat pipe is arranged through the auxiliary heat pipe hole 40, the electrode is arranged through the electrode hole 50, and the sensor is arranged through the sensor hole 60.

[0064] In addition, those skilled in the art should recognize that the above embodiments are only used to illustrate the present disclosure and are not intended to limit the present disclosure. As long as they are within the spirit of the present disclosure, appropriate changes and modifications to the above embodiments are within the scope of the present disclosure.

Claims

1. A furnace tube end cover, applied to a furnace tube, wherein the furnace tube is used to accommodate a carrier carrying a silicon wafer, characterized in that: The furnace tube end cover is provided with at least a first exhaust port and a second exhaust port, the first exhaust port and the second exhaust port are respectively located on both sides of an imaginary vertical plane where the center of the furnace tube end cover is located, the imaginary vertical plane is perpendicular to the surface of the furnace tube end cover, the first exhaust port and the second exhaust port are symmetrically arranged with respect to the imaginary vertical plane, and the first exhaust port and the second exhaust port are used to exhaust the gas in the furnace tube; The furnace tube end cover is also provided with auxiliary heat pipe holes, and the auxiliary heat pipe holes are respectively arranged at the top and bottom of the furnace tube end cover; The furnace tube end cover is also provided with an electrode hole.

2. The furnace tube end cover according to claim 1, characterized in that: The center of the first exhaust port and the center of the second exhaust port are both located above the imaginary horizontal plane where the center of the furnace tube end cover is located.

3. The furnace tube end cover according to claim 1, characterized in that: The centers of the first exhaust port and the second exhaust port are located in an imaginary horizontal plane where the center of the furnace tube end cover is located.

4. The furnace tube end cover according to claim 1, characterized in that: The outer contour of the cross section of the furnace tube end cover is circular, and the first exhaust port and the second exhaust port are circular holes.

5. The furnace tube end cover according to claim 4, characterized in that: The minimum distance between any point of the carrier in the projection area of ​​the furnace tube end cover and the edge of the first exhaust port or the second exhaust port is less than or equal to half of the radius of the furnace tube end cover.

6. The furnace tube end cover according to any one of claims 1 to 5, characterized in that: The furnace tube end cover is further provided with a third exhaust port, and the third exhaust port is located between the first exhaust port and the second exhaust port and is located on the imaginary vertical plane.

7. The furnace tube end cover according to any one of claims 1 to 5, characterized in that: The furnace tube end cover is further provided with a third exhaust port, and the first exhaust port, the second exhaust port and the third exhaust port are distributed as three vertices of a triangle.

8. The furnace tube end cover according to any one of claims 1 to 5, characterized in that: The furnace tube end cover is also provided with a sensor hole, and the sensor hole is used to install a sensor for sensing the gas temperature in the furnace tube.

9. The furnace tube end cover according to any one of claims 1 to 5, characterized in that: The furnace tube end cover is also provided with an observation window.

10. A silicon wafer coating device, characterized in that: It comprises a furnace tube, a carrier and a furnace tube end cover as claimed in any one of claims 1 to 9, wherein the furnace tube end cover is arranged at one end of the furnace tube, and the carrier is arranged in the furnace tube and is used for carrying silicon wafers.

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