Resistance method silicon carbide single crystal growth equipment

Abstract

The utility model discloses resistance method silicon carbide single crystal growth equipment which comprises a support, a vacuum chamber is arranged on the support, a graphite heating body is arranged in the vacuum chamber, a heating assembly is arranged on the vacuum chamber, and the heating assembly penetrates through the vacuum chamber to be connected with the graphite heating body. The graphite heating body is vertically hung in the vacuum chamber through the heating assembly, and the heating assembly enables the graphite heating body to heat through current so as to heat the interior of the vacuum chamber. According to the resistance method silicon carbide single crystal growth equipment provided by the utility model, through a resistance heating principle, a relatively uniform heating effect can be realized, the quality problem caused by non-uniform temperature is avoided, and compared with other heating modes, the graphite heating body heating can efficiently convert electric energy into heat energy, reduce energy loss, improve energy utilization efficiency and reduce energy consumption. And the heating power and the heating time of the graphite heating body can be controlled by adjusting parameters such as current and voltage, and the operation is simple.

Description

Technical Field

[0001] The utility model belongs to the technical field of silicon carbide single crystal growth, and in particular relates to silicon carbide single crystal growth equipment using a resistance method. Background Art

[0002] Silicon carbide is an important semiconductor material with a high melting point, excellent electrical and thermal properties, and is therefore widely used in power electronics, optoelectronics, semiconductor devices, and other fields. Resistance-based silicon carbide crystal growth is a common method for preparing large-size silicon carbide single crystals. The principle is to place a source block (usually a polycrystalline source) containing the target material and a bottom block (for receiving the growing single crystal) in a reaction chamber and heat them to produce gaseous substances, which will be carried to the target site by an inert gas (such as argon). At the target site, the gaseous substance will cool and condense to form a single crystal, and the temperature in the resistance furnace will be adjusted by a precise temperature control system to ensure temperature conditions suitable for the growth of silicon carbide single crystals.

[0003] Most of the current silicon carbide crystals are produced using induction silicon carbide equipment, which has certain disadvantages when used: 1) Induction furnaces mainly achieve heating through the principle of induction heating, which can easily cause the surface temperature of the heated material to rise quickly, while the internal temperature rises slowly, which may cause uneven temperature; 2) In induction furnaces, since induction heating is eddy current heating generated by electromagnetic induction, it will produce a certain amount of energy loss, affecting thermal efficiency; 3) Induction furnaces have certain requirements on the characteristics of the heated materials, usually requiring the heated materials to be metal materials with good conductivity, and the heating effect is not good for non-metallic materials or materials with poor conductivity; 4) Due to the high temperature and electromagnetic field inside the induction furnace, maintenance and cleaning are more difficult, and professional personnel are required to perform maintenance and maintenance; 5) The manufacturing and installation costs of induction furnaces are relatively high, especially for large induction furnaces that require customized designs.

[0004] Therefore, there is an urgent need to design a resistance method silicon carbide single crystal growth equipment to solve the problems mentioned above in the prior art of using induction heating, which results in uneven heating, low heating efficiency, high cost, and inconvenience for professional personnel to maintain and service. Utility Model Content

[0005] In order to solve the technical problems mentioned in the background technology that the prior art uses induction heating, resulting in uneven heating, low heating efficiency, high cost, and inconvenience for professional maintenance and servicing, a resistance method silicon carbide single crystal growth equipment is provided to solve the above problems.

[0006] To achieve the above purpose, the specific technical scheme of the resistance method silicon carbide single crystal growth equipment of the utility model is as follows:

[0007] A resistance method silicon carbide single crystal growth device includes a bracket, a vacuum chamber is arranged on the bracket, a graphite heating element is arranged in the vacuum chamber, a heating component is arranged on the vacuum chamber, the heating component passes through the vacuum chamber and is connected to the graphite heating element, the heating component vertically suspends the graphite heating element inside the vacuum chamber, and the heating component generates heat through electric current to heat the inside of the vacuum chamber.

[0008] Furthermore, the heating component includes a DC power supply cabinet, which is arranged on a bracket. A first copper bar connecting plate and a second copper bar connecting plate are horizontally arranged on the DC power supply cabinet. The end of the first copper bar connecting plate away from the DC power supply cabinet is vertically connected to the first copper rod, and the end of the second copper bar connecting plate away from the DC power supply cabinet is vertically connected to the second copper rod. The first copper rod and the second copper rod pass through the vacuum chamber and are respectively connected to the first water-cooled electrode and the second water-cooled electrode, and a side of the first water-cooled electrode away from the first copper rod and a side of the second water-cooled electrode away from the second copper rod are both connected to the graphite heating element.

[0009] Furthermore, a boss is provided at one end of the graphite heating element, and the boss is fixedly connected to the first water-cooled electrode and the second water-cooled electrode by bolts.

[0010] Furthermore, a plurality of cutting grooves are arranged on the outer periphery of the graphite heating body, and the plurality of cutting grooves are arranged at intervals along the axial direction of the graphite heating body.

[0011] Furthermore, it also includes a cold water component. The vacuum chamber includes an inner shell and an outer shell. The inner shell is arranged in the outer shell. An upper cover is arranged on the top of the vacuum chamber. A top cover is arranged on the upper cover. A bottom cover is arranged on the bottom of the vacuum chamber. The inner shell and the outer shell of the vacuum chamber, the upper cover, the top cover and the bottom cover are all connected to the cold water component.

[0012] Furthermore, it also includes a lifting module, which is arranged on a bracket. The lifting module is provided with a rotating component, and the rotating component is rotatably provided with a rotating shaft. The rotating shaft passes through the bottom cover of the vacuum chamber and is connected to the crystal disk in the vacuum chamber to drive the crystal disk to rotate and lift.

[0013] Furthermore, it also includes a primary vacuum pumping component and a secondary vacuum pumping component. The side wall of the vacuum chamber is provided with a first vacuum hole and a second vacuum hole. The primary vacuum pumping component is connected to the first vacuum hole, and is used to pre-vacuum the vacuum chamber. The secondary vacuum pumping component is connected to the second vacuum hole, and is used to evacuate the inside of the vacuum chamber to a predetermined vacuum value.

[0014] Furthermore, it also includes a high-temperature infrared thermometer, which is arranged on the top of the vacuum chamber. The top cover of the vacuum chamber is provided with a temperature sensing hole. The high-temperature infrared thermometer is aligned with the temperature sensing hole to measure the temperature inside the vacuum chamber.

[0015] Furthermore, it also includes a ventilation component. A process gas interface is opened on the side wall of the vacuum chamber. The ventilation component is connected to the interior of the vacuum chamber through the process gas interface to allow inert gas to be introduced into the interior of the vacuum chamber.

[0016] Furthermore, a maintenance opening is provided on the side wall of the vacuum chamber for maintenance.

[0017] The resistance method silicon carbide single crystal growth equipment of the utility model has the following advantages:

[0018] A graphite heating element is arranged in a vacuum chamber, a heating component is arranged on the vacuum chamber, the heating component passes through the vacuum chamber and is connected to the graphite heating element, the heating component vertically suspends the graphite heating element inside the vacuum chamber, and the heating component causes the graphite heating element to generate heat through electric current to heat the inside of the vacuum chamber. Through the principle of resistance heating, a relatively uniform heating effect can be achieved, and quality problems caused by uneven temperature are avoided. Compared with other heating methods, graphite heating element heating can efficiently convert electrical energy into thermal energy, reduce energy loss, and improve energy utilization efficiency. Moreover, the heating power and heating time of the graphite heating element can be controlled by adjusting parameters such as current and voltage, and the operation is simple. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of the structure of the resistance method silicon carbide single crystal growth equipment of the utility model;

[0020] Figure 2 This is a front view of the resistance method silicon carbide single crystal growth equipment of the utility model;

[0021] Figure 3 This is a rear view of the resistance method silicon carbide single crystal growth device of the utility model;

[0022] Figure 4 The structure of the vacuum chamber of the utility model is shown in FIG. Figure 1 ;

[0023] Figure 5 The structure of the vacuum chamber of the utility model is shown in FIG. Figure 2 ;

[0024] Figure 6 It is a schematic diagram of the cross-sectional structure of the vacuum chamber of the utility model.

[0025] Description of the markings in the figure:

[0026] 100, bracket; 200, cold water assembly; 300, vacuum pipe assembly; 400, ventilation assembly; 1, vacuum chamber; 11, outer shell; 12, inner shell; 13, temperature sensing hole; 14, inspection port; 15, upper cover; 16, top cover; 17, bottom cover; 2, graphite heating element; 21, boss; 22, cutting groove; 3, heating assembly; 31, DC power supply cabinet; 32, first copper bar connecting plate; 33, second copper bar connecting plate; 3 4. First copper rod; 35. Second copper rod; 36. First water-cooled electrode; 37. Second water-cooled electrode; 4. Lifting module; 41. Second connecting plate; 5. Rotating assembly; 51. Rotating shaft; 52. Bellows; 53. Connecting seat; 54. First connecting plate; 55. Motor; 56. First pulley; 57. Second pulley; 58. Synchronous belt; 6. Primary vacuum assembly; 7. Secondary vacuum assembly; 8. High-temperature infrared thermometer. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the utility model.

[0028] Those skilled in the art will appreciate that, although some embodiments herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present invention and form different embodiments. For example, in the claims, any one of the claimed embodiments may be used in any combination.

[0029] Please refer to the attached Figure 1 To Attachment Figure 6 The utility model is described in detail. The utility model relates to a resistance method silicon carbide single crystal growth device.

[0030] like Figures 1 to 6As shown, the resistance method silicon carbide single crystal growth device in the utility model includes a bracket 100, a vacuum chamber 1 is arranged on the bracket 100, a graphite heating element 2 is arranged in the vacuum chamber 1, a heating component 3 is arranged on the vacuum chamber 1, the heating component 3 passes through the vacuum chamber 1 and is connected to the graphite heating element 2, the heating component 3 vertically suspends the graphite heating element 2 inside the vacuum chamber 1, and the heating component 3 makes the graphite heating element 2 generate heat through electric current to heat the inside of the vacuum chamber 1. In this embodiment, the graphite heating element 2 is used as the heating element. Graphite has high temperature resistance, small expansion coefficient, good chemical stability, high melting point, good thermal conductivity, can quickly conduct heat, achieve rapid heating effect, improve heating efficiency, and the graphite heating element 2 can achieve a relatively uniform heating effect, avoiding quality problems caused by uneven temperature, and the graphite heating element 2 has high heat transfer efficiency, can effectively convert electrical energy into thermal energy, save energy and reduce emissions, and meet the requirements of energy conservation and environmental protection.

[0031] A graphite heating element 2 is arranged in a vacuum chamber 1, a heating component 3 is arranged on the vacuum chamber 1, the heating component 3 passes through the vacuum chamber 1 and is connected to the graphite heating element 2, the heating component 3 vertically suspends the graphite heating element 2 inside the vacuum chamber 1, and the heating component 3 makes the graphite heating element 2 heat up through an electric current to heat the inside of the vacuum chamber 1. Through the principle of resistance heating, a relatively uniform heating effect can be achieved, and quality problems caused by uneven temperature are avoided. Compared with other heating methods, heating of the graphite heating element 2 can efficiently convert electrical energy into thermal energy, reduce energy loss, and improve energy utilization efficiency. Moreover, the heating power and heating time of the graphite heating element 2 can be controlled by adjusting parameters such as current and voltage, and the operation is simple.

[0032] Further, if Figures 2 to 6As shown, the heating assembly 3 includes a DC power supply cabinet 31, which is arranged on a bracket 100, and a first copper bar connecting plate 32 and a second copper bar connecting plate 33 are horizontally arranged on the DC power supply cabinet 31, and the first copper bar connecting plate 32 is vertically connected to a first copper rod 34 at one end away from the DC power supply cabinet 31, and the second copper bar connecting plate 33 is vertically connected to a second copper rod 35 at one end away from the DC power supply cabinet 31, and the first copper rod 34 and the second copper rod 35 pass through the vacuum chamber 1 and are respectively connected to the first water-cooled electrode 36 and the second water-cooled electrode 37, and the first water-cooled electrode 36 is away from the first copper rod 34 and the second water-cooled electrode 37 is away from the second copper rod 35. Both are connected to the graphite heating element 2. In this embodiment, a DC power supply cabinet 31 is used for power supply. Compared with AC power, the DC power supply has better stability, the voltage, current and other parameters of the DC power supply are easy to control, the energy loss is low in power transmission and conversion, and the efficiency is relatively high compared to the AC power supply. In this embodiment, the material of the water-cooled electrode device is copper, which has the following advantages: 1) Copper is a good conductive material, which is conducive to the passage of current through the electrode and provides a stable heating effect; 2) Copper has a high melting point and good high temperature resistance, which is suitable for long-term work in a high temperature environment and meets the high temperature heating requirements in a vacuum electrical environment; 3) The structure of the copper water-cooled electrode is stable, not easy to deform or damage, and can maintain a stable heating effect during long-term use; 4) The water-cooled electrode conductive rod is provided with a cooling water channel, which can realize rapid cooling of the electrode, effectively control the electrode temperature, and avoid problems caused by overheating of the electrode. At the same time, the current density of the water-cooled electrode conductive rod can be increased through the cooling design. Sealing, insulation and other measures are adopted between the first water-cooled electrode 36, the second water-cooled electrode 37 and the vacuum chamber 1 to ensure safety.

[0033] Further, if Figure 6As shown, a boss 21 is provided at one end of the graphite heating element 2, and the boss 21 is fixedly connected to the first water-cooled electrode 36 and the second water-cooled electrode 37 by bolts. A plurality of first connection holes are provided on the boss 21, a plurality of second connection holes are provided on the first water-cooled electrode 36, and a plurality of third connection holes are provided on the second water-cooled electrode 37. The first connecting member connects the boss 21 to the first water-cooled electrode 36 through the first connection hole and the second connection hole in sequence, and the second connecting member connects the boss 21 to the second water-cooled electrode 37 through the first connection hole and the third connection hole in sequence. Power is supplied through the DC power supply cabinet 31, so that the graphite heating element 2 is heated, and heat is supplied to the vacuum chamber 1. In this embodiment, the graphite heating element 2 is a hollow sleeve structure, and a plurality of cutting grooves 22 are provided on the periphery of the graphite heating element 2. By providing a plurality of cutting grooves 22, the plurality of cutting grooves 22 are arranged at intervals along the axial direction of the graphite heating element 2. The multiple ring cutting grooves 22 provided on the graphite heating element 2 can reduce the resistance of the graphite heating element 2 itself, help optimize the flow path of the current, and enable the current to be more evenly distributed on the surface of the graphite heating element 2, thereby achieving uniform distribution of heat and reducing local current density, reducing local overheating and uneven resistance, achieving uniform distribution of heat, and at the same time optimizing the temperature gradient within the graphite heating element 2, thereby improving the overall heating efficiency and heating effect of the graphite heating element 2.

[0034] Further, if Figures 2 to 6 As shown, in the resistance method silicon carbide single crystal growth equipment of the utility model, a large amount of heat will be generated by the internal graphite heating element 2 during operation. The internal heat will mainly diffuse to the surroundings by radiation. In order to prevent the deformation of the vacuum chamber 1 caused by uneven heating, the temperature of the vacuum chamber 1 is reduced to ensure the safety of the equipment and possible accidental injuries to personnel, such as burns. The resistance method silicon carbide single crystal growth equipment in the utility model also includes a cold water component 200, the vacuum chamber 1 includes an inner shell 12 and an outer shell 11, the inner shell 12 is sleeved in the outer shell 11, an upper cover 15 is arranged on the top of the vacuum chamber 1, a top cover 16 is arranged on the upper cover 15, and a bottom cover 17 is arranged on the bottom of the vacuum chamber 1, the inner shell 12 and the outer shell 11 of the vacuum chamber 1, the upper cover 15, the top cover 16 and the bottom cover 17 are all connected to the cold water component 200, and cold water is introduced between the inner shell 12 and the outer shell 11 of the vacuum chamber 1 through the cold water component 200, and cold water is introduced into the upper cover 15, the top cover 16 and the bottom cover 17 to ensure the safety of the equipment and possible accidental injuries to personnel. In this embodiment, the cold water assembly 200 is provided with multiple groups of water channels, each group of water channels includes a water inlet pipe and a water outlet pipe, and the inner shell 12 and the outer shell 11 of the vacuum chamber 1, as well as the upper cover 15, the top cover 16 and the bottom cover 17 are respectively connected to the corresponding water channels on the cold water assembly 200.

[0035] Further, if Figures 2 to 6As shown, the resistance method silicon carbide single crystal growth device in the utility model also includes a lifting module 4, which is arranged on a bracket 100, and a rotating assembly 5 is arranged on the lifting module 4. A rotating shaft 51 is rotatably arranged on the rotating assembly 5, and the rotating shaft 51 passes through the bottom cover 17 of the vacuum chamber 1 and is connected to the crystal disk in the vacuum chamber 1 to drive the crystal disk to rotate and lift. Specifically, a through hole is opened on the bottom wall of the vacuum chamber 1, and one end of the rotating shaft 51 passes through the through hole to enter the vacuum chamber 1 and is connected to the crystal disk, and a crystal is placed on the crystal disk. A bellows 52 and a connecting seat 53 are provided on the other end of the rotating shaft 51, and one end of the bellows 52 is sealed and connected to the through hole, and the other end of the bellows 52 is sealed and connected to the connecting seat 53, and the connecting seat 53 is sealed with the rotating shaft 51 to isolate the vacuum chamber 1 from the air, and the rotating shaft 51 is connected to the rotating assembly 5, and the rotating assembly 5 drives the rotating shaft 51 to rotate, so as to drive the crystal disk to rotate, which can further ensure the uniformity of the thermal field of crystal growth. The connection seat 53 is connected to the lifting module 4, and the lifting module 4 drives the connection seat 53 to rise and fall, so that the rotating shaft 51 drives the crystal plate to rise and fall. In this embodiment, the rotating shaft 51 is also connected to a set of water inlet pipes and water outlet pipes in the cold water assembly 200, and cold water is also passed into the rotating shaft 51. The purpose of passing cold water into the rotating shaft 51 is also to prevent thermal stress concentration, which may cause material fatigue, cracks or other forms of damage.

[0036] The resistance method silicon carbide single crystal growth equipment in the utility model also includes a first flange, which is sleeved outside the rotating shaft 51, one end of the first flange is sealed and connected to the through hole of the bottom wall of the vacuum chamber 1, and the other end of the first flange is sealed and connected to the bellows 52. In order to further ensure the sealing of the connection between the through hole and the first flange, the resistance method silicon carbide single crystal growth equipment in the utility model also includes a first seal, which is arranged between the through hole of the bottom wall of the vacuum chamber 1 and the first flange to seal the through hole and the first flange. The resistance method silicon carbide single crystal growth equipment in the utility model also includes a second flange, which is sleeved outside the rotating shaft 51, one end of the second flange is sealed and connected to one end of the bellows 52 away from the first flange, and the other end of the second flange is sealed and connected to the connecting seat 53. In order to further ensure the sealing of the connection between the second flange and the connecting seat 53, a second seal is also included, which is arranged between the second flange and the connecting seat 53 to seal the second flange and the connecting seat 53.

[0037] The rotating shaft 51 and the through hole, the first flange, the bellows 52 and the second flange are all clearance-fitted, so that during the rotation of the rotating shaft 51, the through hole, the first flange, the bellows 52 and the second flange will not interfere with each other during the rotation process, and a closed space is formed between the vacuum chamber 1, the through hole, the first flange, the bellows 52, the second flange and the connecting seat 53. After sealing, the vacuum chamber 11 is separated from the outside air, thereby ensuring the sealing effect.

[0038] Further, if Figure 5 and Figure 6 As shown, the resistance method silicon carbide single crystal growth device in the utility model in the utility model also includes a first connecting plate 54, the first connecting plate 54 is connected to the connecting seat 53, and a rotating assembly 5 is arranged on the first connecting plate 54, and the rotating assembly 5 drives the rotating shaft 51 to rotate so as to rotate the crystal disk. Specifically, the rotating assembly 5 includes a motor 55, a first pulley 56, a second pulley 57 and a synchronous belt 58, the motor 55 is arranged on the first connecting plate 54, the driving end of the motor 55 is connected to the first pulley 56, the second pulley 57 is sleeved outside the rotating shaft 51, and the first pulley 56 and the second pulley 57 are connected by a synchronous belt 58. In other embodiments, the first pulley 56 and the second pulley 57 can also be replaced by a first gear and a second gear, the first gear and the second gear are meshed, the motor 55 drives the first gear to rotate, and then drives the second gear to rotate, and the second gear drives the rotating shaft 51 to rotate, so as to realize the rotation of the crystal disk. The resistance method silicon carbide single crystal growth device of the utility model further includes a second connecting plate 41, the second connecting plate 41 is connected to the connecting seat 53, and a lifting module 4 is arranged on the second connecting plate 41, and the lifting module 4 drives the connecting seat 53 to rise and fall, so that the rotating shaft 51 drives the crystal disk to rise and fall. In this embodiment, the lifting and falling of the lifting module 4 will drive the driving component and the connecting seat 53, the rotating shaft 51, and the second flange to rise and fall synchronously, and the lifting and falling of the rotating shaft 51 relative to the vacuum chamber 1 is realized by the compression and extension of the bellows 52, thereby realizing the lifting and falling movement of the crystal disk.

[0039] Further, if Figure 4 As shown, the resistance method silicon carbide single crystal growth device in the utility model also includes a primary vacuum pumping component 6 and a secondary vacuum pumping component 7, and the primary vacuum pumping component 6 and the secondary vacuum pumping component 7 are connected to the vacuum chamber 1 through a vacuum pipeline component 300. A first vacuum hole and a second vacuum hole are opened on the side wall of the vacuum chamber 1, and the primary vacuum pumping component 6 is connected to the first vacuum hole, and the primary vacuum pumping component 6 is used to pre-vacuum the vacuum chamber 1, and the secondary vacuum pumping component 7 is connected to the second vacuum hole, and the secondary vacuum pumping component 7 is used to evacuate the inside of the vacuum chamber 1 to a predetermined vacuum value.

[0040] Further, if Figures 1 to 6As shown, the vacuum pipeline assembly 300 includes a mechanical pump, a molecular pump, a high vacuum gate valve, a butterfly valve, a bellows and a vacuum gauge. The vacuum measurement uses a full-range vacuum gauge and a vacuum gauge, which is convenient for observing the data at the ultimate vacuum and ensuring the precise control of the vacuum degree inside the vacuum chamber 1 during the crystal growth process. The primary vacuum pumping assembly 6 and the secondary vacuum pumping assembly 7 are open layouts, which are convenient for maintenance, cleaning and replacement. A pressure regulating butterfly valve is arranged on the main exhaust pipeline of the primary vacuum pumping assembly 6 and the secondary vacuum pumping assembly 7. The advanced PID control is adopted to realize the vacuuming according to any pressure control curve set by the user, so as to realize flexible vacuuming. The primary vacuum pumping assembly 6 and the secondary vacuum pumping assembly 7 can cooperate with the ventilation assembly 400. Under the condition of constant air intake of the ventilation assembly 400, the opening degree of the butterfly valve is adjusted by the PID control strategy, and then the pump group is adjusted to make the pressure in the furnace body dynamically stable at a certain constant value; a metal bellows is arranged between the furnace body and the vacuum pump to reduce the impact of the vibration of the vacuum pump on the furnace body during operation. A vacuum leak detection interface is arranged on the vacuum pipeline for rapid leak detection of the system. When working, first open the butterfly valve, then open the angle valve behind the butterfly valve, the primary vacuum assembly 6 is vacuumed by the mechanical pump, the vacuum gauge detects the vacuum degree of the cavity, and when the vacuum value reaches a certain value, the front angle valve of the molecular pump, the molecular pump, and the plug valve are opened in sequence, and the secondary vacuum assembly 7 starts the main pumping until the required vacuum degree; when the process needs to be broken, the special gas is filled into the vacuum chamber 1 through the special gas system to break the air. In this embodiment, the molecular pump is also connected to a group of water inlet pipes and outlet pipes in the cold water assembly 200, and cold water is also introduced into the molecular pump. The molecular pump is introduced with cooling water to prevent the components from overheating and ensure that the components operate safely within normal temperatures.

[0041] Further, if Figures 2 to 6 As shown, the first water-cooled electrode 36, the second water-cooled electrode 37 and the DC power supply cabinet 31 are also respectively connected to a group of water inlet pipes and water outlet pipes in the cold water assembly 200. The cooling water is introduced into the first water-cooled electrode 36 and the second water-cooled electrode 37 because most of the first water-cooled electrode 36 and the second water-cooled electrode 37 are in the vacuum chamber 1, and will be subjected to some radiant heat during the operation of the equipment. This part of radiant heat may cause the first water-cooled electrode 36 and the second water-cooled electrode 37 to concentrate thermal stress. This thermal stress may cause material fatigue, cracks or other forms of damage. The circulation of cold water can help disperse these thermal stresses and extend the service life of the first water-cooled electrode 36 and the second water-cooled electrode 37. On the other hand, the first water-cooled electrode 36 and the second water-cooled electrode 37 are covered with sealing components on their outer columns. If the temperature of the first water-cooled electrode 36 and the second water-cooled electrode 37 is too high, the sealing components may be deformed or even melted, affecting the sealing effect, or even completely unable to achieve sealing.

[0042] Further, if Figures 2 to 6As shown, the resistance method silicon carbide single crystal growth equipment in the utility model also includes a high-temperature infrared thermometer 8, which is arranged on the top of the vacuum chamber 1. The top cover 16 of the vacuum chamber 1 is provided with a temperature sensing hole 13, and the temperature sensing hole 13 is connected to the inside of the vacuum chamber 1. The high-temperature infrared thermometer 8 is aligned with the temperature sensing hole 13 to measure the temperature inside the vacuum chamber 1. The temperature is measured by the high-temperature infrared thermometer 8 to measure and control the temperature inside the vacuum chamber 1. It has three control modes: constant voltage, constant current, and constant power, which can be selected according to actual conditions. At the same time, it has multiple protection modes such as low water flow, overheating warning, overheating protection, overvoltage protection, overcurrent protection, module failure protection, etc., and a multi-module parallel redundant design can be selected. When a single module fails, the remaining modules automatically adjust the output to maintain the power output, thereby improving the stability of system operation.

[0043] Further, if Figure 3 As shown, the resistance method silicon carbide single crystal growth equipment in the utility model also includes a ventilation component 400. A process gas interface is provided on the side wall of the vacuum chamber 1. The ventilation component 400 is connected to the inside of the vacuum chamber 1 through the process gas interface to pass the inert gas into the inside of the vacuum chamber 1. Specifically, the ventilation component 400 is divided into two parts: a special gas component and a compressed air component. The special gas component is composed of a hand valve, a pressure regulating valve, a filter, a mass flow meter, an air intake pipeline, etc. The equipment has three air intakes, one for argon, one for hydrogen, and one for nitrogen. The flow rate of each air intake is set according to the process. Argon, hydrogen and nitrogen can all be adjusted and controlled in real time by a gas mass flow meter. The compressed air is connected to the valve island through a pressure reducing valve, and each pneumatic valve is supplied with air through a program.

[0044] Further, if Figure 4 and Figure 5 As shown, the side wall of the vacuum chamber 1 is also provided with an inspection port 14 for inspection.

[0045] Further, if Figure 1 and Figure 2 As shown, the bracket 100 is composed of a square tube bracket 100 and an exterior sheet metal. The bracket 100 is set to an upper and lower two-layer structure, and the bracket 100 also includes an electrical cabinet, an operation screen, etc. The vacuum chamber 1 is fixed on the upper platform of the frame body. At the same time, the operator can enter the platform through a movable simple staircase to operate and conveniently take and place the heating body. A touch screen and related buttons and indicator lights are designed on the outer panel of the bracket 100, and an audible and visual alarm is provided on the top. When the equipment has faults such as over-temperature, over-pressure, and insufficient vacuum, the equipment will send out an audible and visual alarm signal.

[0046] Further, if Figures 3 to 6As shown, the vacuum chamber 1 is formed by connecting the upper chamber and the lower chamber, and both the upper chamber and the lower chamber include an inner shell 12 and an outer shell 11. Cold water flows in the inner shell 12 and the outer shell 11. The upper chamber and the lower chamber are connected by flanges, and a sealing ring is arranged between the flanges for sealing. The inner shell 12 and the flange of the vacuum chamber 1 are made of high-quality stainless steel 316L, the outer shell 11 is made of high-quality stainless steel 304, and the inner wall of the entire inner shell 12 adopts a double-sided welding structure. The inner surface is matte polished to reduce reflected light and heat, the outer surface of the outer shell 11 is sandblasted and electrolyzed, and the furnace shell is equipped with interfaces such as water-cooled electrodes, vacuum, cooling water, and process gas circuits; the flange is a double-layer sandwich water-cooled structure, and circulating water is passed in the middle to prevent the furnace surface from overheating. The flange surface is sandblasted and electrolyzed, and the furnace body is sealed with an O-type vacuum rubber sealing ring. In this embodiment, the water circuits of the cold water assembly 200 are divided into 9 groups, and the 9 groups of water circuits are respectively provided with water for the top cover 16, the upper cover 15, the upper chamber, the lower chamber, the bottom cover 17, the rotating shaft 51 and the molecular pump, the power cabinet and the first water-cooled electrode 36 and the second water-cooled electrode 37. The cold water assembly 200 is provided with components such as a ball valve, a pressure gauge, a pressure sensor, a flow meter, a pipe joint, a temperature sensor, etc., which generally control the flow, pressure, temperature, etc. of each group of water circuits of the cold water assembly 200.

[0047] Furthermore, the resistance method silicon carbide single crystal growth equipment in the utility model also includes an electrical component, which is controlled by a programmable controller PLC. The heating and heating time parameters can be set according to different process requirements, and the automatic control has a strong anti-interference ability. The touch screen with corresponding devices and interfaces can realize the process parameter setting, control, display, storage, transmission and other operations. The touch screen interface is a Chinese and English interface, which can realize manual and automatic operation modes. The touch screen can realize the valve opening and closing, heating and other action control, parameter setting, equipment operation real-time data display, temperature, power, pressure and other data list display, alarm information display and pop-up problem solving sub-interface, recording, data export and other functions, and can also realize authority management to prevent unauthorized operation of the equipment. The main circuit and control circuit of the control part are separated, and both are equipped with air switches and circuit breakers, with perfect overload protection functions, and have over-temperature, over-current, short circuit and other functions.

[0048] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation methods of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all implementation methods here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included in the protection scope of the claims of the present invention.

Claims

1. A resistance method silicon carbide single crystal growth device, characterized in that: The invention comprises a bracket, a vacuum chamber is arranged on the bracket, a graphite heating element is arranged in the vacuum chamber, a heating component is arranged on the vacuum chamber, the heating component passes through the vacuum chamber and is connected with the graphite heating element, the heating component vertically suspends the graphite heating element inside the vacuum chamber, and the heating component generates heat through electric current to heat the inside of the vacuum chamber.

2. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: The heating component includes a DC power supply cabinet, which is arranged on a bracket. A first copper bar connecting plate and a second copper bar connecting plate are horizontally arranged on the DC power supply cabinet. The end of the first copper bar connecting plate away from the DC power supply cabinet is vertically connected to a first copper rod, and the end of the second copper bar connecting plate away from the DC power supply cabinet is vertically connected to a second copper rod. The first copper rod and the second copper rod pass through a vacuum chamber and are respectively connected to a first water-cooled electrode and a second water-cooled electrode. A side of the first water-cooled electrode away from the first copper rod and a side of the second water-cooled electrode away from the second copper rod are both connected to the graphite heating element.

3. The resistance method silicon carbide single crystal growth equipment according to claim 2, characterized in that: A boss is arranged at one end of the graphite heating element, and the boss is fixedly connected to the first water-cooling electrode and the second water-cooling electrode by bolts.

4. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: A plurality of cutting grooves are arranged on the outer periphery of the graphite heating body, and the plurality of cutting grooves are arranged at intervals along the axial direction of the graphite heating body.

5. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: It also includes a cold water component. The vacuum chamber includes an inner shell and an outer shell. The inner shell is arranged in the outer shell. An upper cover is arranged on the top of the vacuum chamber. A top cover is arranged on the upper cover. A bottom cover is arranged on the bottom of the vacuum chamber. The inner shell and the outer shell of the vacuum chamber, the upper cover, the top cover and the bottom cover are all connected to the cold water component.

6. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: It also includes a lifting module, which is arranged on a bracket. The lifting module is provided with a rotating component, and the rotating component is rotatably provided with a rotating shaft. The rotating shaft passes through the bottom cover of the vacuum chamber and is connected with the crystal disk in the vacuum chamber to drive the crystal disk to rotate and lift.

7. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: It also includes a primary vacuum pumping component and a secondary vacuum pumping component. The side wall of the vacuum chamber is provided with a first vacuum hole and a second vacuum hole. The primary vacuum pumping component is connected to the first vacuum hole and is used to pre-vacuum the vacuum chamber. The secondary vacuum pumping component is connected to the second vacuum hole and is used to evacuate the interior of the vacuum chamber to a predetermined vacuum value.

8. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: It also includes a high-temperature infrared thermometer, which is arranged on the top of the vacuum chamber. The top cover of the vacuum chamber is provided with a temperature sensing hole. The high-temperature infrared thermometer is aligned with the temperature sensing hole to measure the temperature inside the vacuum chamber.

9. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: It also includes a ventilation component. A process gas interface is opened on the side wall of the vacuum chamber. The ventilation component is connected to the interior of the vacuum chamber through the process gas interface to allow inert gas to be introduced into the interior of the vacuum chamber.

10. The resistance method silicon carbide single crystal growth equipment according to claim 1, characterized in that: The side wall of the vacuum chamber is also provided with an inspection port for maintenance.

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