Connection section, gate drive unit, and power electronic device

Abstract

The utility model provides a connection section, a gate driving unit and power electronic equipment, and relates to the technical field of semiconductors, at least one first contact electrode is arranged on a first concave side of a first main body part, and at least one first connection contact is arranged on at least one first end side of the first main body part; a second concave side of the second main body part is provided with at least one second contact electrode, at least one second end side of the second main body part is provided with at least one second connecting contact, the first connecting contact and the second connecting contact are electrically contacted with each other, and the first contact electrode and the second contact electrode are connected with the gate lead-out structure and the cathode lead-out structure in a welding manner. Based on the welding connection mode, a threaded connection mode in the prior art can be replaced, and then a series of defects caused by the threaded connection mode are overcome. The direct electrical connection between the first connection contact and the second connection contact can effectively ensure the reduction of parasitic impedance and the improvement of turn-off current.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, in particular to a connecting section, a gate drive unit and a power electronic device. Background Art

[0002] Existing power semiconductor devices are usually connected to the gate drive unit by fastening screws. This threaded connection method is not only complicated and time-consuming to disassemble and install, but also easily causes deformation of the gate lead structure and cathode lead structure during the disassembly and installation process, resulting in degradation of power semiconductor performance. In addition, the threaded connection belongs to pressure contact, which has technical problems such as large parasitic parameters and limiting the further increase of the turn-off current. Utility Model Content

[0003] Based on this, it is necessary to provide a connection section, a gate drive unit and a power electronic device to address the above-mentioned technical problems.

[0004] The present application provides a connection section of a gate drive unit, the connection section comprising:

[0005] A first main body portion, the first main body portion having a first concave side, a first convex side and two first end sides, the first concave side of the first main body portion being provided with at least one first contact electrode, and at least one first end side of the first main body portion being provided with at least one first connection contact;

[0006] a second main body portion, the second main body portion having a second concave side, a second convex side and two second end sides, the second concave side of the second main body portion being provided with at least one second contact electrode, and at least one second end side of the second main body portion being provided with at least one second connection contact;

[0007] The first main body portion and the second main body portion are configured to be spliced ​​with each other, thereby forming a through space between the first concave side of the first main body portion and the second concave side of the second main body portion, the first connecting contact of the first main body portion and the second connecting contact of the second main body portion are configured to be in electrical contact with each other, and the first contact electrode of the first main body portion and the second contact electrode of the second main body portion are configured to be welded to the gate lead structure and the cathode lead structure of the power semiconductor device.

[0008] In one embodiment, the first contact electrode is fixedly connected to at least one of the first connection contacts; or,

[0009] The first contact electrode and all the first connection contacts are spaced apart from each other; or,

[0010] The second contact electrode is fixedly connected to at least one of the second connection contacts; or,

[0011] The second contact electrode and all the second connection contacts are spaced apart from each other; or,

[0012] At least one of the first main body portion and the second main body portion is configured as a curved structure; or,

[0013] At least a portion of at least one of the first body portion and the second body portion is configured as a solder resist region.

[0014] In one embodiment, one first connection contact is disposed on one first end side of the first main body, and one first connection contact is disposed on the other first end side of the first main body; and / or,

[0015] One second connection contact is disposed on one second end side of the second main body, and one second connection contact is disposed on the other second end side of the second main body.

[0016] In one embodiment, one first connection contact is disposed on a first end side of the first main body, and a plurality of first connection contacts are disposed on another first end side of the first main body; and / or,

[0017] One second connection contact is disposed on a second end side of the second main body portion, and a plurality of second connection contacts are disposed on the other second end side of the second main body portion.

[0018] In one embodiment, a plurality of the first connection contacts are disposed on a first end side of the first main body, and a plurality of the first connection contacts are disposed on another first end side of the first main body; and / or,

[0019] One of the second connection contacts is disposed on the second end sides of the second main body, and a plurality of the second connection contacts is disposed on the other second end side of the second main body.

[0020] In one embodiment, a first sub-body portion is disposed on the first concave side of the first main body portion, at least a portion of the first sub-body portion is configured as a solder resist area, and the first contact electrode is located between the first main body portion and the first sub-body portion; and / or,

[0021] A second sub-body portion is disposed on the second inner concave side of the second main body portion, at least a portion of the second sub-body portion is configured as a solder resist region, and the second contact electrode is located between the second main body portion and the second sub-body portion.

[0022] In one embodiment, a first end side of the first main body is fixedly connected to a second end side of the second main body, and a separation gap exists between another first end side of the first main body and another second end side of the second main body.

[0023] In one embodiment, the first contact electrode of the first body portion and the second contact electrode of the second body portion are fixedly connected.

[0024] The present application provides a gate drive unit, the gate drive unit comprising:

[0025] the connecting section;

[0026] A functional section is connected to the connecting section.

[0027] The present application provides a power electronic device, the power electronic device comprising:

[0028] A power semiconductor device, wherein the power semiconductor device has a gate lead-out structure and a cathode lead-out structure;

[0029] The gate drive unit, the connecting section of the gate drive unit is configured to be connected to the gate lead structure and the cathode lead structure of the power semiconductor device by welding.

[0030] In the above-mentioned connecting section, gate drive unit and power electronic equipment, when the above-mentioned gate drive unit is connected to the gate lead structure and cathode lead structure of the power semiconductor device by using its connecting section, the first contact electrode of the first main body and the second contact electrode of the second main body can be configured to be welded to the gate lead structure and cathode lead structure of the power semiconductor device, which is also equivalent to inserting the first contact electrode of the first main body and the second contact electrode of the second main body between the gate lead structure and the cathode lead structure of the tube shell package of the power semiconductor device, and welding the first contact electrode of the first main body and the second contact electrode of the second main body to the gate lead structure and the cathode lead structure.

[0031] Based on the welding connection method mentioned above, the threaded connection method in the prior art can be replaced, thereby solving a series of disadvantages brought about by the threaded connection method. Moreover, when the gate drive unit uses its connection section to connect with the gate lead structure and the cathode lead structure of the power semiconductor device, the first connection contact of the first main body and the second connection contact of the second main body can also be configured to be in electrical contact with each other at the same time, thereby achieving direct electrical connection between the first connection contact of the first main body and the second connection contact of the second main body. The direct electrical connection method can effectively ensure the reduction of parasitic impedance and the improvement of the shutdown current. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a three-dimensional cross-sectional view of a power semiconductor device provided in one embodiment.

[0033] Figure 2 This is a schematic diagram of the structure of the connection section provided in the first embodiment of the present application.

[0034] Figure 3 This is a schematic diagram of the structure of the connection section provided in the second embodiment of the present application.

[0035] Figure 4 This is a schematic diagram of the structure of the connection section provided in the third embodiment of the present application.

[0036] Figure 5 This is a schematic diagram of the structure of the connection section provided in the fourth embodiment of the present application.

[0037] Figure 6 This is a schematic diagram of the structure of the connection section provided in the fifth embodiment of the present application.

[0038] Figure 7 This is a schematic diagram of the structure of the connection section provided in the sixth embodiment of the present application.

[0039] Figure 8 This is a schematic diagram of the structure of the connection section provided in the seventh embodiment of the present application.

[0040] Fig. 9 This is a schematic diagram of the structure of the connection section provided in the eighth embodiment of the present application.

[0041] Fig.10 This is a schematic diagram of the structure of the connection section provided in the ninth embodiment of the present application.

[0042] Fig.11 This is a schematic diagram of the structure of the connection section provided in the tenth embodiment of the present application.

[0043] Figure Number:

[0044] 1. Anode electrode; 2. Anode molybdenum sheet; 3. Power semiconductor chip; 4. Cathode molybdenum sheet; 5. Cathode electrode; 6. Gate molybdenum sheet; 7. Gate assembly; 8. Gate spokes; 9. Anode lead structure; 10. Ceramic tube shell; 11. Gate metal ring; 12. Gate isolation ring; 13. Gate lead structure; 14. Cathode lead structure; 15. Ceramic ring;

[0045] 161. Complete main body; 162. Complete contact electrode; 163. Complete secondary body;

[0046] 1641, first contact electrode; 1642, first connection contact; 1643, first main body; 1644, first auxiliary body;

[0047] 1651. Second contact electrode; 1652. Second connection contact point; 1653. Second main body; 1654. Second auxiliary body. DETAILED DESCRIPTION

[0048] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0049] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0050] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0051] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0052] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0053] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0054] The present application provides a power electronic device, the power electronic device comprising a power semiconductor device and a gate drive unit, Figure 1 As shown, the power semiconductor device may include an anode electrode 1, an anode molybdenum sheet 2, a cathode molybdenum sheet 4 and a cathode electrode 5. A power semiconductor chip 3 may be arranged inside the power semiconductor device, and the power semiconductor chip 3 is located between the anode molybdenum sheet 2 and the cathode molybdenum sheet 4. Among them, the gate spoke 8 may contact the gate molybdenum sheet 6 under the elastic pressure of the gate assembly 7, and the anode molybdenum sheet 2, the cathode molybdenum sheet 4 and the gate molybdenum sheet 6 may contact the anode region, the cathode region and the gate region of the power semiconductor chip 3 respectively under the action of external pressure.

[0055] Continue reading Figure 1 As shown, the anode lead structure 9 (such as an anode flange) connects the ceramic tube 10 and the anode electrode 1, the cathode lead structure 14 (such as a cathode flange) connects the ceramic ring 15 and the cathode electrode 5, and the cathode lead structure 14 has a gate lead structure 13 (such as a gate connecting ring) to lead out the gate spoke 8 and connect the ceramic tube 10 and the ceramic ring 15. At the same time, the cathode lead structure 14 has a radial groove from the outer edge to the ceramic ring 15 for installing the gate drive unit, and longitudinal through holes are left on the gate lead structure 13 and the cathode lead structure 14. The gate isolation ring 12 and the gate metal ring 11 can be stacked on the gate lead structure 13.

[0056] Regarding the gate drive unit mentioned above, the connection section of the gate drive unit can be configured to be connected to the gate lead structure 13 and the cathode lead structure 14 of the power semiconductor device, and the connection section can be connected to the gate lead structure 13 and the cathode lead structure 14 by welding, thereby completing the electrical connection and mechanical fixation. Among them, the welding method can adopt a variety of welding methods such as preformed solder sheet welding, pre-coated solder welding, brazing, wave soldering, reflow soldering, laser welding, plasma welding, cold pressure welding, etc., or a combination of at least two of the above welding methods can be adopted. Therefore, the present application uses welding to replace the threaded connection method, which can effectively avoid a series of disadvantages brought about by the threaded connection method.

[0057] Moreover, regarding the above-mentioned welding connection, the present application also provides a corresponding welding design based on the limitation of the structural design. Regarding the gate drive unit mentioned above, the gate drive unit mainly includes a connection section and a functional section, and the functional section is connected to the connection section. The functional section and the connection section can be based on the same printed circuit board. The functional section is arranged with various drive module electronic components and connection lines that realize the driving function on the printed circuit board. The connection section of the gate drive unit is mainly used to connect with the gate lead structure 13 and the cathode lead structure 14. Therefore, the structural design for welding connection is also located in the connection section of the gate drive unit.

[0058] See also Figures 2 to 11 As shown, the connection section may include a first main body portion 1643 and a second main body portion 1653. It should be noted that the first main body portion 1643 and the second main body portion 1653 may be Figures 2 to 10 The two separable independent parts shown can also be Fig.11 For different regional parts of an integral part shown, without affecting the basic design concept of the present application, technicians in this field can choose different design methods according to actual needs, and no limitation is made here.

[0059] For the separation method of the first main body 1643 and the second main body 1653, see Figures 2 to 5 As shown, the first main body portion 1643 and the second main body portion 1653 can be separated laterally, that is, separated laterally along a direction perpendicular to the connection direction of the functional section and the connection section. Figures 6 to 10 As shown, the first main body 1643 and the second main body 1653 can also be separated longitudinally, that is, they can be separated transversely along the connection direction between the functional section and the connection section. In addition, the first main body 1643 and the second main body 1653 can also be separated obliquely based on other directions, and the size, structure, shape, etc. of the separation between the first main body 1643 and the second main body 1653 can be set according to specific needs, and are not limited to the following. Figures 2 to 10The separation methods shown in several embodiments are not limited here.

[0060] Furthermore, this application is only Figures 2 to 11 The ten embodiments shown demonstrate the structural design concept of the above-mentioned connecting section, but the structural design scope covered by this application is not limited to the above-mentioned ten embodiments. Those skilled in the art can modify the above-mentioned embodiments within the scope of the design concept provided by this application, thereby forming more embodiments other than these, which are not limited here.

[0061] In one embodiment, the first body portion 1643 may be defined as having a first concave side, a first convex side, and two first end sides, the first concave side, the first convex side, and the two first end sides may substantially surround the first body portion 1643, at least one first contact electrode 1641 is disposed on the first concave side of the first body portion 1643, and at least one first end side of the first body portion 1643 is disposed with at least one first connection contact 1642. Therefore, as Figure 2 As shown, the approximate positions of the first concave side, the first convex side and the two first end sides can be determined based on the positions where the first contact electrodes 1641 and the first connection contacts 1642 are arranged.

[0062] Similarly, the second body portion 1653 may be defined as having a second concave side, a second convex side and two second end sides, the second concave side, the second convex side and the two second end sides may substantially surround the second body portion 1653, at least one second contact electrode 1651 is disposed on the second concave side of the second body portion 1653, and at least one second end side of the second body portion 1653 is disposed with at least one second connection contact 1652. Similarly, if Figure 2 As shown, based on the positions where the second contact electrodes 1651 and the second connection contacts 1652 are arranged, the approximate positions of the second inner concave side, the second outer convex side and the two second end sides can be determined.

[0063] The first main body 1643 and the second main body 1653 are configured to be spliced ​​with each other, and a complete structure can be formed based on the splicing between the first main body 1643 and the second main body 1653, thereby forming a through space between the first concave side of the first main body 1643 and the second concave side of the second main body 1653, and the through space can be configured to connect the gate lead structure 13 and the cathode lead structure 14 of the power semiconductor device. In the shape design of the first main body 1643 and the second main body 1653, the first main body 1643 and the second main body 1653 can be configured as a curved structure, for example, the first main body 1643 and the second main body 1653 are configured as a circular arc, an elliptical arc, etc., thereby forming a circular or elliptical structure with a through space inside through the splicing between the first main body 1643 and the second main body 1653, which is not limited here.

[0064] Continue reading Figure 2 As shown, when the gate drive unit mentioned above is connected to the gate lead structure 13 and the cathode lead structure 14 of the power semiconductor device by using its connecting section, the first contact electrode 1641 of the first main body 1643 and the second contact electrode 1651 of the second main body 1653 can be configured to be welded to the gate lead structure 13 and the cathode lead structure 14 of the power semiconductor device, which is also equivalent to inserting the first contact electrode 1641 of the first main body 1643 and the second contact electrode 1651 of the second main body 1653 between the gate lead structure 13 and the cathode lead structure 14 of the tube shell package of the power semiconductor device, and welding the first contact electrode 1641 of the first main body 1643 and the second contact electrode 1651 of the second main body 1653 to the gate lead structure 13 and the cathode lead structure 14.

[0065] Based on the welding connection method mentioned above, the threaded connection method in the prior art can be replaced, thereby solving a series of disadvantages brought about by the threaded connection method. Moreover, when the gate drive unit uses its connection section to connect with the gate lead structure 13 and the cathode lead structure 14 of the power semiconductor device, the first connection contact 1642 of the first main body 1643 and the second connection contact 1652 of the second main body 1653 can also be configured to be used for mutual electrical contact at the same time, thereby achieving direct electrical connection between the first connection contact 1642 of the first main body 1643 and the second connection contact 1652 of the second main body 1653. The direct electrical connection method can effectively ensure the reduction of parasitic impedance and the improvement of the shutdown current.

[0066] Regarding the first contact electrode 1641, the second contact electrode 1651, the first connection contact 1642, and the second connection contact 1652 mentioned above, in one embodiment, the first contact electrode 1641 may be configured to be fixedly connected to at least one first connection contact 1642, or the first contact electrode 1641 may be configured to be spaced apart from all the first connection contacts 1642, that is, the first contact electrode 1641 is not directly connected to any of the first connection contacts 1642. At the same time, the second contact electrode 1651 may be configured to be fixedly connected to at least one second connection contact 1652, or the second contact electrode 1651 may be configured to be spaced apart from all the second connection contacts 1652, that is, the second contact electrode 1651 is not directly connected to any of the second connection contacts 1652.

[0067] In one embodiment, one first end side of the first main body 1643 may be provided with one first connection contact 1642, and the other first end side of the first main body 1643 may be provided with one first connection contact 1642, that is, the two first end sides of the first main body 1643 may be provided with one first connection contact 1642 respectively. Alternatively, one first end side of the first main body 1643 may be provided with one first connection contact 1642, and the other first end side of the first main body 1643 may be provided with a plurality of first connection contacts 1642. Alternatively, one first end side of the first main body 1643 may be provided with a plurality of first connection contacts 1642, and the other first end side of the first main body 1643 may be provided with a plurality of first connection contacts 1642.

[0068] At the same time, one second end side of the second body portion 1653 may be provided with a second connection contact 1652, and the other second end side of the second body portion 1653 may be provided with a second connection contact 1652, that is, the two second end sides of the second body portion 1653 may be provided with a second connection contact 1652 respectively. Alternatively, one second end side of the second body portion 1653 may be provided with a second connection contact 1652, and the other second end side of the second body portion 1653 may be provided with a plurality of second connection contacts 1652. Alternatively, one second connection contact 1652 may be provided on the plurality of second end sides of the second body portion 1653, and the other second end side of the second body portion 1653 may be provided with a plurality of second connection contacts 1652.

[0069] For example, see Figure 4 As shown, when the first main body 1643 and the second main body 1653 are separated laterally, a plurality of first connection contacts 1642 may be disposed at two first end sides of the first main body 1643, and a plurality of second connection contacts 1652 may be disposed at two second end sides of the second main body 1653. Figure 5 As shown, when the first main body 1643 and the second main body 1653 are separated laterally, a plurality of first connection contacts 1642 may be disposed at two first end sides of the first main body 1643, and a second connection contact 1652 may be disposed at two second end sides of the second main body 1653. Figure 8 As shown, when the first main body 1643 and the second main body 1653 are separated longitudinally, a first connection contact 1642 can be set at two first end sides of the first main body 1643, and a second connection contact 1652 can be set at two second end sides of the second main body 1653.

[0070] See also Fig. 9As shown, when the first body portion 1643 and the second body portion 1653 are separated longitudinally, a first end side of the first body portion 1643 may be provided with a first connection contact 1642, another first end side of the first body portion 1643 may be provided with a plurality of first connection contacts 1642, a second end side of the second body portion 1653 may be provided with a second connection contact 1652, and another second end side of the second body portion 1653 may be provided with a plurality of second connection contacts 1652. Fig.10 As shown, when the first main body 1643 and the second main body 1653 are separated longitudinally, a first connecting contact 1642 can be set on a first end side of the first main body 1643, a plurality of first connecting contacts 1642 can be set on the other first end side of the first main body 1643, a second connecting contact 1652 can be set on a second end side of the second main body 1653, and a second connecting contact 1652 can be set on the other second end side of the second main body 1653.

[0071] Therefore, based on the above-mentioned embodiments, it can be known that the number, position, and matching relationship of the first contact electrode 1641, the second contact electrode 1651, the first connection contact 1642, and the second connection contact 1652 can be designed in a variety of ways and are not limited to certain listed embodiments. Therefore, those skilled in the art can select the number, position, and matching relationship of the first contact electrode 1641, the second contact electrode 1651, the first connection contact 1642, and the second connection contact 1652 according to actual needs, and are not limited here.

[0072] Moreover, when the number of the first connection contacts 1642 or the second connection contacts 1652 increases, the amount of solder used for each of the first connection contacts 1642 and the second connection contacts 1652 can also be reduced to reduce the mutual influence of the welding process. The structural design of the connection section formed based on the number, position and matching relationship of the first contact electrode 1641, the second contact electrode 1651, the first connection contact 1642 and the second connection contact 1652 can make the manufacturing process mature and controllable, with high tolerance for process tolerance and good process compatibility.

[0073] At least one of the first main body 1643 and the second main body 1653 can be formed by stacking copper layers and insulating materials, such as a multi-layer printed circuit board, a composite busbar, a laminated busbar, and a combination of the above-mentioned plates. Among them, at least a part of the area of ​​at least one of the first main body 1643 and the second main body 1653 is configured as a solder resist area, that is, the first main body 1643 and the second main body 1653 can be set as a solder resist area according to requirements, and the solder resist areas of the first main body 1643 and the second main body 1653 can be set as a part of the area or the whole area according to requirements, which is not limited here.

[0074] Also, continue reading Figures 3 to 5 ,as well as Figures 7 to 10 As shown, in the scheme of horizontal separation or vertical separation of the first main body 1643 and the second main body 1653, the first concave side of the first main body 1643 can be provided with the first sub-body 1644 as required, and the first contact electrode 1641 is located between the first main body 1643 and the first sub-body 1644, and at least a part of the first sub-body 1644 is configured as a solder resist area. The second concave side of the second main body 1653 can also be provided with the second sub-body 1654 as required, and the second contact electrode 1651 is located between the second main body 1653 and the second sub-body 1654, and at least a part of the second sub-body 1654 is configured as a solder resist area.

[0075] The solder resist area provided on any one of the first main body 1643 , the second main body 1653 , the first auxiliary body 1644 and the second auxiliary body 1654 can be mainly used to prevent the flowing solder from entering the internal cavity during the welding process and causing a short circuit between the gate lead structure 13 and the cathode lead structure 14 .

[0076] See also Fig.11 As shown, in one embodiment, a first end side of the first main body 1643 and a second end side of the second main body 1653 can be fixedly connected. For example, a first end side of the first main body 1643 and a second end side of the second main body 1653 can be fixedly connected to each other to form an integrally formed structure, that is, the first main body 1643 and the second main body 1653 mentioned above can be as follows Fig.11 At this time, the first main body 1643 and the second main body 1653 can be formed into a complete main body 161, and there is a separation gap between the other first end side of the first main body 1643 and the other second end side of the second main body 1653, based on which the gate lead-out structure 13 and the cathode lead-out structure 14 of the power semiconductor device can be welded and installed.

[0077] For example, during installation, the first body portion 1643 and the second body portion 1653 may be separated based on the separation gap between the first body portion 1643 and the second body portion 1653. Figure 1 The gate lead structure 13 and the cathode lead structure 14 of the power semiconductor device shown are screwed into the through space formed between the first concave side of the first main body 1643 and the second concave side of the second main body 1653, so that the first contact electrode 1641 and the second contact electrode 1651 of the gate drive unit are in contact with the gate lead structure 13 and the cathode lead structure 14, and are welded together to complete the electrical connection and mechanical fixation.

[0078] Based on the above-mentioned one-piece structure formed by the first main body 1643 and the second main body 1653 being fixedly connected to each other, the structural designs such as the first contact electrode 1641, the second contact electrode 1651, the first connecting contact 1642, the second connecting contact 1652, the first auxiliary body 1644 and the second auxiliary body 1654 can also be correspondingly set as an one-piece structure fixedly connected to each other, thereby matching the one-piece structural design of the connecting section.

[0079] For example, continue to see Fig.11 As shown, in one embodiment, the first contact electrode 1641 of the first main body 1643 and the second contact electrode 1651 of the second main body 1653 are fixedly connected, so that the first contact electrode 1641 and the second contact electrode 1651 are formed into an integral structure. In this case, the first contact electrode 1641 and the second contact electrode 1651 can be formed into a complete contact electrode 162, and the corresponding position of the separation gap set between the first main body 1643 and the second main body 1653 also forms a separated gap. Similarly, the first auxiliary body 1644 and the second auxiliary body 1654 can also be fixedly connected, so that the first auxiliary body 1644 and the second auxiliary body 1654 are formed into an integral structure. In this case, the first auxiliary body 1644 and the second auxiliary body 1654 can be formed into a complete auxiliary body 163, and the corresponding position of the separation gap set between the first main body 1643 and the second main body 1653 also forms a separated gap. Those skilled in the art can make corresponding structural designs according to actual needs, which are not limited here.

[0080] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0081] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A connection section of a gate drive unit, characterized in that: The connection section comprises: A first main body portion, the first main body portion having a first concave side, a first convex side and two first end sides, the first concave side of the first main body portion being provided with at least one first contact electrode, and at least one first end side of the first main body portion being provided with at least one first connection contact; a second main body portion, the second main body portion having a second concave side, a second convex side and two second end sides, the second concave side of the second main body portion being provided with at least one second contact electrode, and at least one second end side of the second main body portion being provided with at least one second connection contact; The first main body portion and the second main body portion are configured to be spliced ​​with each other, thereby forming a through space between the first concave side of the first main body portion and the second concave side of the second main body portion, the first connecting contact of the first main body portion and the second connecting contact of the second main body portion are configured to be in electrical contact with each other, and the first contact electrode of the first main body portion and the second contact electrode of the second main body portion are configured to be welded to the gate lead structure and the cathode lead structure of the power semiconductor device.

2. The connecting section according to claim 1, characterized in that The first contact electrode is fixedly connected to at least one of the first connection contacts; or, The first contact electrode and all the first connection contacts are spaced apart from each other; or, The second contact electrode is fixedly connected to at least one of the second connection contacts; or, The second contact electrode and all the second connection contacts are spaced apart from each other; or, At least one of the first main body portion and the second main body portion is configured as a curved structure; or, At least a portion of at least one of the first body portion and the second body portion is configured as a solder resist region.

3. The connecting section according to claim 1, characterized in that One first connection contact is disposed on one first end side of the first main body, and one first connection contact is disposed on the other first end side of the first main body; and / or, One second connection contact is disposed on one second end side of the second main body, and one second connection contact is disposed on the other second end side of the second main body.

4. The connecting section according to claim 1, characterized in that One first connection contact is disposed on a first end side of the first main body, and a plurality of first connection contacts are disposed on another first end side of the first main body; and / or, One second connection contact is disposed on a second end side of the second main body portion, and a plurality of second connection contacts are disposed on the other second end side of the second main body portion.

5. The connecting section according to claim 1, characterized in that A plurality of the first connection contacts are disposed on a first end side of the first main body, and a plurality of the first connection contacts are disposed on another first end side of the first main body; and / or, One of the second connection contacts is disposed on each of the second end sides of the second main body, and a plurality of the second connection contacts is disposed on another second end side of the second main body.

6. The connecting section according to claim 1, characterized in that A first sub-body portion is disposed on the first concave side of the first main body portion, and the first contact electrode is located between the first main body portion and the first sub-body portion; and / or, The second concave side of the second main body is provided with a second auxiliary body, and the second contact electrode is located between the second main body and the second auxiliary body.

7. The connecting section according to any one of claims 1 to 6, characterized in that: A first end side of the first main body is fixedly connected to a second end side of the second main body, and a separation gap exists between the other first end side of the first main body and the other second end side of the second main body.

8. The connecting section according to claim 7, characterized in that The first contact electrode of the first body portion and the second contact electrode of the second body portion are fixedly connected.

9. A gate drive unit, characterized in that: The gate drive unit comprises: The connecting section according to any one of claims 1 to 8; A functional section is connected to the connecting section.

10. A power electronic device, characterized in that: The power electronic device comprises: A power semiconductor device, wherein the power semiconductor device has a gate lead-out structure and a cathode lead-out structure; The gate drive unit according to claim 9, wherein the connection section of the gate drive unit is configured to be connected to the gate lead structure and the cathode lead structure of the power semiconductor device by welding.

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