Atomic layer deposition equipment and semiconductor equipment

Abstract

The utility model provides atomic layer deposition equipment and semiconductor equipment. Wherein Tesla valves are arranged in the atomic layer deposition equipment and the semiconductor equipment. And the Tesla valves are arranged on the input pipeline and the output pipeline, so that the one-way flow characteristic of the Tesla valves is utilized to realize one-way flow of precursor gas sequentially passing through the input pipeline, the reaction chamber and the output pipeline, and the problem of pipeline pollution caused by gas reflux is effectively avoided. And meanwhile, the small-angle turning times of the input pipeline can be increased in the temperature change area of the heating belt, so that the heating gas is fully mixed, the process parameters such as the temperature, the flow velocity, the flow and the pressure of the precursor gas can be accurately controlled, the high-precision requirements of the atomic layer deposition process or other semiconductor processes are met, and the process effect is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to an atomic layer deposition device and a semiconductor device. Background Art

[0002] Atomic layer deposition (ALD) is a process that can deposit the material on the substrate surface layer by layer in the form of a single atomic film. It has the excellent performance of large-area uniform thin film deposition, controllable growth of nano-scale thin films, low-temperature deposition, and adaptability to various complex substrates (such as structures with ultra-high aspect ratios). As the critical dimensions in semiconductor processes continue to decrease, ALD's ultra-high precision film-forming characteristics make it widely used in semiconductor advanced thin film processes.

[0003] See also Figure 1 , the existing ALD equipment generally includes a precursor system 101, a reaction chamber 102 and an exhaust gas treatment system 103. The precursor system 101 is used to sequentially provide one or more precursor gases G1 to the reaction chamber 102; the reaction chamber 102 is used to accommodate the wafer W, and provide the wafer W and each precursor gas G1 with the space and pressure environment required for the reaction; the exhaust gas treatment system 103 is used to treat the exhaust gas G2 after the reaction. In the actual process, in order to ensure the precise control of the composition and thickness of the deposited material by ALD at the nanoscale, it is necessary to accurately control the process parameters such as the flow rate, flow velocity, pressure and temperature of the precursor gas G1. However, the existing ALD equipment has the risk of gas backflow. That is, due to the excessive difference in the pressure and flow rate of the precursor gas G1, the precursor gas G1 flows back from the reaction chamber 102 to the input pipe 1011, and the exhaust gas G2 flows back to the reaction chamber 102 through the output pipe 1031. This gas backflow phenomenon will not only cause changes in the gas process parameters in the reaction chamber 102, affecting the film growth effect, but will also cause pollution to other pipelines in the equipment, affecting the process progress. In this regard, the prior art relies on various valves V in the input pipeline 1011 and the output pipeline 1031 and gas purges to prevent the gas from backflowing into the core pipeline. However, this method cannot completely eliminate the occurrence of the backflow phenomenon. The gas backflow rate will still be affected by the process parameters such as gas pressure and flow rate. It is difficult to completely alleviate the adverse effects of gas backflow on film growth and pipeline pollution.

[0004] In addition, in order to ensure the effective transmission of the precursor gas G1 and avoid pipeline contamination, a heating device (not shown) is provided on the outer surface of the input pipeline 1011 of the precursor system 101 to heat the precursor gas G1 in the pipe. However, due to the difference in the distance between the precursor gas G1 in the pipe and the heat source, the temperature distribution of the precursor gas G1 in the pipe is uneven, that is, the temperature of the precursor gas G1 close to the pipe wall is higher than that of the precursor gas G1 close to the central axis of the pipe. The uneven temperature of the precursor gas G1 will not only lead to different film growth rates in different regions, affecting the uniformity of the film layer, but also cause the precursor gas G1 to precipitate in the pipeline, causing contamination to the pipeline, and causing the problem of insufficient supply of the precursor gas G1, affecting the process effect.

[0005] Therefore, a new atomic layer deposition equipment is urgently needed to solve the above technical problems. Utility Model Content

[0006] The utility model aims to provide an atomic layer deposition device and a semiconductor device to solve at least one of the following problems: how to avoid gas backflow, realize gas unidirectional flow, and how to improve gas temperature uniformity.

[0007] In order to solve the above technical problems, the utility model provides an atomic layer deposition device, including: a precursor gas supply module, a reaction chamber and an exhaust gas treatment module;

[0008] The precursor gas supply module includes at least one input pipeline, and the input pipeline is connected to the reaction chamber;

[0009] The exhaust gas treatment module includes at least one output pipeline, and the output pipeline is connected to the reaction chamber;

[0010] Wherein, at least one Tesla valve is respectively provided on the input pipeline and the output pipeline, so that the precursor gas flows unidirectionally through the input pipeline, the reaction chamber and the output pipeline in sequence.

[0011] Optionally, in the atomic layer deposition equipment, a first valve is also provided on the input pipeline, and the Tesla valve is provided on one side or both sides where the first valve is connected to the input pipeline; and a second valve is also provided on the output pipeline, and the Tesla valve is provided on one side or both sides where the second valve is connected to the output pipeline.

[0012] Optionally, in the atomic layer deposition equipment, a plurality of Tesla valves are spaced apart on the input pipe and the output pipe.

[0013] Optionally, in the atomic layer deposition equipment, a heating belt is provided on the outer surface of at least a portion of the input pipe section, and the heating belt has a first end and a second end opposite to each other, and the Tesla valve is provided at the first end and / or the second end corresponding to the position on the input pipe.

[0014] Optionally, in the atomic layer deposition equipment, when the number of the heating belts is greater than or equal to 2, the Tesla valve is arranged between adjacent heating belts.

[0015] Based on the same concept, the utility model also provides a semiconductor device, comprising: a fluid supply module, a reaction chamber and a fluid output module;

[0016] The fluid supply module includes at least one input pipeline, and the input pipeline is connected to the reaction chamber;

[0017] The fluid output module includes at least one output pipeline, and the output pipeline is connected to the reaction chamber;

[0018] Wherein, at least one Tesla valve is respectively provided on the input pipeline and the output pipeline, so that the fluid flows unidirectionally through the input pipeline, the reaction chamber and the output pipeline in sequence.

[0019] Optionally, in the semiconductor device, a first valve is further provided on the input pipeline, and the Tesla valve is provided on one side or both sides where the first valve is connected to the input pipeline; and a second valve is further provided on the output pipeline, and the Tesla valve is provided on one side or both sides where the second valve is connected to the output pipeline.

[0020] Optionally, in the semiconductor device, a plurality of Tesla valves are spaced apart on the input pipe and the output pipe.

[0021] Optionally, in the semiconductor device, a heating belt is provided on the outer surface of at least a portion of the input pipeline, and the heating belt has a first end and a second end opposite to each other, and the Tesla valve is provided at the first end and / or the second end corresponding to the position on the input pipeline.

[0022] Optionally, in the semiconductor device, when the number of the heating belts is greater than or equal to 2, the Tesla valve is arranged between adjacent heating belts.

[0023] In summary, the utility model provides an atomic layer deposition device and a semiconductor device. Among them, the atomic layer deposition device and the semiconductor device are both provided with a Tesla valve. And the Tesla valve is arranged on the input pipeline and the output pipeline, so as to utilize the unidirectional flow characteristics of the Tesla valve to realize the unidirectional flow of the precursor gas through the input pipeline, the reaction chamber and the output pipeline in sequence, and effectively avoid the pipeline contamination problem caused by gas backflow. Furthermore, the Tesla valve can also increase the number of small-angle changes of the input pipeline in the temperature change area of ​​the heating zone, so that the heating gas is fully mixed, which is conducive to accurately controlling the process parameters such as temperature, flow rate, flow rate and pressure of the precursor gas, meeting the high-precision requirements of the atomic layer deposition process or other semiconductor processes, and improving the process effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Those skilled in the art will appreciate that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.

[0025] Figure 1 It is a schematic diagram of the structure of an atomic layer deposition device in the prior art.

[0026] Figure 2 It is a schematic structural diagram of an atomic layer deposition device in an embodiment of the utility model.

[0027] Figure 3 It is a schematic diagram of the forward flow of the Tesla valve in the embodiment of the utility model.

[0028] Figure 4 Schematic diagram of the reverse flow of the Tesla valve in the embodiment of the utility model.

[0029] Figure 5 It is a schematic diagram of a Tesla valve being arranged on one side of the first valve in an embodiment of the utility model.

[0030] Figure 6 It is a schematic diagram of Tesla valves being arranged on both sides of the first valve in an embodiment of the utility model.

[0031] Figure 7 It is a schematic diagram of the distribution of heating belts in the prior art.

[0032] Figure 8 It is a schematic diagram of the positional relationship between the Tesla valve and the heating belt in the embodiment of the utility model.

[0033] Fig. 9 It is a schematic diagram of the Tesla valve uniform flow of precursor gas in an embodiment of the utility model.

[0034] And, in the attached drawings:

[0035] 101-precursor system; 1011-input pipeline; 102-reaction chamber; 103-exhaust gas treatment system; 1031-output pipeline;

[0036] 201-precursor gas supply module; 2011-input pipeline; 2012-first valve; 2013-heating belt; 202-reaction chamber; 203-exhaust gas treatment module; 2031-output pipeline; 2032-second valve; 2033-throttle valve;

[0037] G1-precursor gas; G2-exhaust gas; V-valve; W-wafer; A-carrier gas; B-gas supply; T-Tesla valve; F-wing barrier. DETAILED DESCRIPTION

[0038] In order to make the purpose, advantages and features of the utility model clearer, the utility model is further described in detail in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the utility model. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different proportions are used. It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third", etc. in the specification are only used to distinguish between the various components, elements, steps, etc. in the specification, and are not used to represent the logical relationship or sequential relationship between the various components, elements, steps, etc.

[0039] See also Figure 2 The present embodiment provides an atomic layer deposition device, comprising: a precursor gas supply module 201, a reaction chamber 202 and an exhaust gas treatment module 203; the precursor gas supply module 201 comprises at least one input pipeline 2011, and the input pipeline 2011 is connected to the reaction chamber 202; the exhaust gas treatment module 203 comprises at least one output pipeline 2031, and the output pipeline 2031 is connected to the reaction chamber 202; wherein, at least one Tesla valve T is respectively provided on the input pipeline 2011 and the output pipeline 2031, so that the precursor gas flows unidirectionally through the input pipeline 2011, the reaction chamber 202 and the output pipeline 2031 in sequence.

[0040] It can be seen that in this embodiment, the Tesla valve T is arranged on the input pipeline 2011 and the output pipeline 2031, so as to utilize the unidirectional flow characteristics of the Tesla valve T to realize the unidirectional flow of the precursor gas through the input pipeline 2011, the reaction chamber 202 and the output pipeline 2031 in sequence, effectively avoiding gas backflow, and facilitating accurate control of process parameters such as the flow rate, flow rate and pressure of the precursor gas, meeting the high-precision requirements of atomic layer deposition, and improving the process effect. At the same time, it is also possible to accurately control the air pressure environment in the reaction chamber 202 and avoid pipeline contamination caused by gas backflow.

[0041] The following is combined with Figures 2 to 9 , specifically describe the atomic layer deposition equipment provided in this embodiment.

[0042] Please continue reading Figure 2 , the atomic layer deposition equipment provided in this embodiment includes a precursor gas supply module 201, a reaction chamber 202 and an exhaust gas treatment module 203. The precursor gas supply module 201 is used to supply precursor gas that meets the reaction requirements to the reaction chamber 202; the reaction chamber 202 is used to carry the wafer W and provide the space and air pressure environment required for the reaction of the wafer W and the precursor gas; the exhaust gas treatment module 203 is used to extract and treat the exhaust gas after the reaction in the reaction chamber 202. It should be noted that the atomic layer deposition equipment also includes a monitoring module, an operating system module, a safety alarm module, etc., which are not described in detail in this embodiment.

[0043] Specifically, the precursor gas supply module 201 includes a gas supply source B and an input pipeline 2011. It should be noted that in the actual process, the precursor gas supply module 201 needs to provide at least one type of precursor gas to the reaction chamber 202 in sequence. For example, using trimethylaluminum [Al(CH3)3, TMA] and water (H2O) as precursor gases to deposit Al2O3 film, it is necessary to first provide trimethylaluminum to the reaction chamber 202, and then use an inert gas to purge the reaction chamber 202 after the reaction to remove residual TMA and by-products. Subsequently, water vapor is introduced into the reaction chamber 202. Based on this, in order to meet the reaction requirements, the precursor gas supply module 201 is generally provided with a plurality of gas supply sources B and a plurality of input pipelines 2011, each of which is connected to a gas supply source B and connected to the reaction chamber 202.

[0044] Furthermore, the end of the input pipe 2011 away from the reaction chamber 202 is also connected to a carrier gas A, and the carrier gas A passes through the gas supply source B to bring the precursor gas into the input pipe 2011 and then into the reaction chamber 202. The carrier gas A is generally an inert gas such as argon or nitrogen, and is also used to purge and clean the reaction chamber 202 before or during the reaction, and to adjust the gas pressure in the reaction chamber 202. Furthermore, since the process parameters such as the flow rate, flow velocity and pressure of the precursor gas have a direct impact on the atomic layer deposition process effect, the input pipe 2011 is generally provided with a first valve 2012 and a programmable logic controller (PLC). The first valve 2012 is not only used to adjust the process parameters such as the flow rate and flow of the precursor gas, but can also be quickly opened and closed to achieve the pulsed supply of the precursor gas. The PLC is used to cycle the first valve 2012 to ensure the normal reaction during the atomic layer deposition reaction.

[0045] See also Figure 2 , Figure 3 and Figure 4 The precursor gas supply module 201 provided in this embodiment is also provided with a Tesla valve T. The Tesla valve T is provided on the input pipeline 2011 to allow the precursor gas to flow unidirectionally from the gas supply source B toward the reaction chamber 202, so as to avoid the adverse effects of the precursor gas backflow on the atomic layer deposition and to avoid the backflow gas from polluting the core pipeline. It should be noted that the Tesla valve T is a passive one-way guide valve with a fixed geometric shape, which can allow the fluid to flow unidirectionally. Figure 3 and Figure 4 As shown, the flow rate of the fluid flowing forward (from right to left) and the reverse flow (from left to right) is very different. When flowing forward, the fluid can bypass all the wing-shaped obstacles F in the Tesla valve T, and then flow from the right to the left unimpeded. And, under the action of flow pressure, it can also play a technical effect of accelerating the flow of the fluid. When the fluid flows in the reverse direction, each time the fluid passes through a channel, it will be divided into two parts, one of which flows into the wing-shaped obstacle F, and the other flows in a straight line. And the part of the fluid that flows into the wing-shaped obstacle F will flow back to the pipeline where the part of the fluid that flows in a straight line is located, generating reverse resistance to it, affecting the overall forward flow of the fluid. In addition, the more wing-shaped obstacles F there are, the greater the resistance to the forward propulsion of the fluid. When there are both forward-flowing fluid and reverse-flowing fluid at the same time, it is difficult for the reverse-flowing fluid to pass through the Tesla valve T. Therefore, the Tesla valve T has a unique one-way conduction effect.

[0046] Based on this, in this embodiment, the Tesla valve T is arranged on the input pipeline 2011, so that the precursor gas flows along the forward direction of the Tesla valve T to the reaction chamber 202, effectively avoiding the problem of backflow of the gas in the reaction chamber 202 and / or part of the gas in the input pipeline 2011, thereby avoiding the pollution of the gas pipeline by the backflow gas, and facilitating the precise control of the process parameters such as the flow rate and flow velocity of the precursor gas, so as to achieve a better atomic layer deposition effect. Among them, this embodiment does not limit the specific setting position and specific number of the Tesla valve T. Since the first valve 2012 controls the core pipeline, it is preferred that Figure 2 , Figure 5 and Figure 6 As shown, the Tesla valve T is arranged on one side or both sides where the first valve 2012 is connected to the input pipeline 2011. For example, the first valve 2012 has a first end and a second end opposite to each other, and the first end and the second end are both connected to the input pipeline 2011, then the Tesla valve T can be arranged on the side of the first end, or on the side of the second end, or one Tesla valve T is arranged on the side of the first end and the second end, respectively, so that the driving gas flows forward along the Tesla valve T to the reaction chamber 202. In order to further improve the effect of unidirectional drainage, a plurality of Tesla valves T can be arranged on the input pipeline 2011, and each Tesla valve T is spaced apart along the input pipeline 2011 to achieve multi-level blocking of the reversely flowing gas, so as to avoid the instability of the process parameters such as the flow rate, flow velocity and pressure of the precursor gas caused by the reverse flow of the gas, thereby affecting the deposition effect.

[0047] For further information, please refer to Figure 2During the reaction process, a large amount of waste gas C and by-products are generated. If they stay in the reaction chamber 202 for a long time, it will affect the thin film deposition. Therefore, the waste gas and by-products need to be evacuated from the reaction chamber 202 in time; and after each precursor gas reacts, the carrier gas A needs to be introduced to purge and clean the reaction chamber 202, so the purge gas needs to be evacuated from the reaction chamber 202 in time. Therefore, the exhaust gas treatment module 203 is provided with an output pipe 2031, a second valve 2032, a throttle valve 2033 and a pump body (not shown), and the second valve 2032, the throttle valve 2033 and the pump body are all connected to the output pipe 2031, so that the exhaust gas C and other substances in the reaction chamber 202 can be extracted by the pump body and promptly flow out through the output pipe 2031 to the exhaust gas treatment device in the exhaust gas treatment module 203 for purification treatment. On the one hand, it can avoid the influence of exhaust gas C on thin film deposition, and on the other hand, it can also effectively control the air pressure in the reaction chamber 202. However, the existing exhaust gas treatment module is prone to the problem of exhaust gas C backflow, which is similar to the problem of precursor gas backflow. Therefore, the exhaust gas treatment module 203 provided in this embodiment is also provided with the Tesla valve T, so as to facilitate the unidirectional fluidity of the Tesla valve T to avoid the problem of exhaust gas C backflow. Preferably, reference can be made to Figure 5 and Figure 6 In the arrangement shown, the Tesla valve T is arranged on one side or both sides where the second valve 2032 is connected to the output pipe 2031. Similarly, to improve the backflow blocking effect, a plurality of Tesla valves T may be arranged on the output pipe 2031 at intervals.

[0048] Based on this, the precursor gas can pass through the input pipe 2011 and the reaction chamber 202 in sequence, and after reacting in the reaction chamber 202, generate waste gas and other by-products. These waste gas and other by-products will flow out through the output pipe 2031, realizing unidirectional flow of the entire reaction process, effectively avoiding the backflow problem of the precursor gas and the waste gas, and facilitating the precise control of the process parameters such as the flow rate, flow rate and pressure of the precursor gas, meeting the high-precision requirements of atomic layer deposition. At the same time, the air pressure environment in the reaction chamber 202 can also be precisely controlled to avoid pipeline contamination caused by backflow.

[0049] It should be noted that during the atomic layer deposition process, there is also a high requirement for the temperature uniformity of the precursor gas. If the temperature uniformity of the precursor gas entering the reaction chamber 202 is poor, it is easy to cause different reaction rates in different regions of the wafer W, resulting in poor uniformity of film deposition thickness, which seriously affects device performance and yield. Based on this, please refer to Figure 2 , Figure 7 , Figure 8 and Fig. 9The precursor gas supply module 201 provided in this embodiment further includes a heating belt 2013, which is sleeved on at least a portion of the input pipe 2011 and is used to keep the precursor gas heated during the transmission of the precursor gas. On the one hand, it can prevent the precursor gas from being cooled and precipitated in the input pipe 2011 during the transmission process, affecting the flow rate of the precursor gas and causing pipeline pollution; on the other hand, it can ensure that the precursor gas has a better reaction temperature when entering the reaction chamber 202. However, if Figure 7 As shown, since the heating belt 2013 is sleeved on the outer wall of the input pipe 2011, the heat will propagate from the outer wall of the input pipe 2011 toward the center of the cavity of the input pipe 2011, which will inevitably cause the temperature of the precursor gas near the outer wall of the input pipe 2011 to be greater than the temperature of the precursor gas located at the center of the inner cavity of the input pipe 2011. In other words, on the cross section formed perpendicular to the extension direction of the input pipe 2011, the temperature of the precursor gas decreases along the direction from the outer wall of the input pipe 2011 toward the center of the cross section. That is, the temperature of the precursor gas in the tube changes in a gradient. Therefore, as Figure 8 As shown, in order to improve the uniformity of the precursor gas, the present embodiment also sets the Tesla valve T between each section of the heating belt 2013, so as to increase the number of small angle changes of the input pipeline 2011 in the temperature change area of ​​the heating belt 2013, so as to fully mix the precursor gas, thereby enhancing the temperature uniformity of the precursor gas. Specifically, as Fig. 9 As shown, in view of the unique morphology of the internal channel of the Tesla valve T, the precursor gas heated by the heating belt 2013 will pass through the diversion and confluence links for many times, which can achieve multiple and sufficient mixing between the precursor gases, thereby causing the precursor gas to have better temperature uniformity, which is beneficial to accurately control the process parameters such as temperature, flow rate, flow rate and pressure of the precursor gas, meet the high-precision requirements of atomic layer deposition process or other semiconductor processes, and improve the process effect.

[0050] Further, the present embodiment does not limit the specific distribution position and specific number of the Tesla valves T relative to the heating belt 2013. Exemplarily, each section of the heating belt 2013 has a first end and a second end opposite to each other, and one or more Tesla valves T are arranged at the first end and / or the second end corresponding to the position on the input pipeline 2011. Preferably, when the number of the heating belts 2013 is greater than or equal to 2, the Tesla valves T are arranged between adjacent heating belts 2013 to improve the temperature uniformity of the precursor gas.

[0051] In summary, the atomic layer deposition equipment provided in this embodiment is provided with a plurality of Tesla valves T on the input pipeline 2011 and the output pipeline 2031, which can not only realize the unidirectional flow of gas and prevent gas backflow, but also improve the temperature uniformity of the precursor gas, thereby improving the preparation effect of the atomic layer deposition process, and meeting the high-precision requirements of the atomic layer deposition process. Based on the same concept, the Tesla valve T can also be set in other semiconductor devices with high-precision process requirements. Therefore, this embodiment also provides a semiconductor device, including: a fluid supply module, a reaction chamber and a fluid output module; the fluid supply module includes at least one input pipeline, and the input pipeline is connected to the reaction chamber; the fluid output module includes at least one output pipeline, and the output pipeline is connected to the reaction chamber; wherein, at least one Tesla valve is respectively provided on the input pipeline and the output pipeline, so that the fluid flows unidirectionally through the input pipeline, the reaction chamber and the output pipeline in sequence. It should be noted that the fluid can be a gas or a liquid.

[0052] Preferably, the arrangement of the Tesla valve can refer to the arrangement in the above-mentioned atomic layer deposition equipment. For example, a first valve is also arranged on the input pipeline, and the Tesla valve is arranged on one side or both sides where the first valve is connected to the input pipeline; and a second valve is also arranged on the output pipeline, and the Tesla valve is arranged on one side or both sides where the second valve is connected to the output pipeline. And, a plurality of Tesla valves are arranged at intervals on the input pipeline and the output pipeline, respectively. Similarly, when a heating belt is provided on the outer surface of at least part of the pipe section of the input pipeline, the Tesla valve is arranged at a position on the input pipeline corresponding to the first end and / or the second end opposite to the heating belt. And, when the number of the heating belts is greater than or equal to 2, the Tesla valve is arranged between adjacent heating belts.

[0053] In summary, in the atomic layer deposition equipment and semiconductor equipment provided in this embodiment, a plurality of Tesla valves T are arranged on the input pipeline 2011 and the output pipeline 2031, so as to utilize the unidirectional flow characteristics of the Tesla valve T to realize the unidirectional flow of gas and avoid gas backflow, which is conducive to accurately controlling the process parameters such as the flow rate, flow rate and pressure of the precursor gas, and meeting the high-precision requirements of atomic layer deposition and other semiconductor processes. At the same time, it is also possible to accurately control the air pressure environment in the reaction chamber 202 and avoid the pipeline pollution problem caused by backflow. In addition, the setting of the Tesla valve T can also increase the number of small-angle changes of the input pipeline 2011 in the temperature change area of ​​the heating belt 2013, so that the precursor gas is fully mixed, and the temperature uniformity of the precursor gas is improved, which can not only avoid the temperature difference causing the precursor gas to precipitate in the pipeline and cause pipeline pollution, but also the precursor gas with better uniformity can make the reaction rate of each area of ​​the wafer W uniform, which is conducive to uniform film formation, improve device performance and yield, and meet the high-precision requirements of atomic layer deposition process or other semiconductor processes.

[0054] In addition, it should be recognized that although the present invention has been disclosed as a preferred embodiment, the above embodiment is not intended to limit the present invention. For any technician familiar with the art, without departing from the scope of the technical solution of the present invention, the above disclosed technical content can be used to make many possible changes and modifications to the technical solution of the present invention, or modified into equivalent embodiments of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiment based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of protection of the technical solution of the present invention.

Claims

1. An atomic layer deposition device, characterized in that: include: Precursor gas supply module, reaction chamber and exhaust gas treatment module; The precursor gas supply module includes at least one input pipeline, and the input pipeline is connected to the reaction chamber; The exhaust gas treatment module includes at least one output pipeline, and the output pipeline is connected to the reaction chamber; Wherein, at least one Tesla valve is respectively provided on the input pipeline and the output pipeline, so that the precursor gas flows unidirectionally through the input pipeline, the reaction chamber and the output pipeline in sequence.

2. The atomic layer deposition device according to claim 1, characterized in that: The input pipeline is also provided with a first valve, and the Tesla valve is provided on one side or both sides where the first valve is connected to the input pipeline; and the output pipeline is also provided with a second valve, and the Tesla valve is provided on one side or both sides where the second valve is connected to the output pipeline.

3. The atomic layer deposition device according to claim 1, characterized in that: A plurality of Tesla valves are arranged at intervals on the input pipeline and the output pipeline respectively.

4. The atomic layer deposition device according to claim 1, characterized in that: The outer surface of at least a portion of the input pipeline is sheathed with a heating belt, and the heating belt has a first end and a second end opposite to each other, and the Tesla valve is arranged at the first end and / or the second end corresponding to the position on the input pipeline.

5. The atomic layer deposition device according to claim 4, characterized in that: When the number of the heating belts is greater than or equal to 2, the Tesla valve is arranged between adjacent heating belts.

6. A semiconductor device, characterized in that: include: A fluid supply module, a reaction chamber and a fluid output module; The fluid supply module includes at least one input pipeline, and the input pipeline is connected to the reaction chamber; The fluid output module includes at least one output pipeline, and the output pipeline is connected to the reaction chamber; Wherein, at least one Tesla valve is respectively provided on the input pipeline and the output pipeline, so that the fluid flows unidirectionally through the input pipeline, the reaction chamber and the output pipeline in sequence.

7. The semiconductor device according to claim 6, characterized in that The input pipeline is also provided with a first valve, and the Tesla valve is provided on one side or both sides where the first valve is connected to the input pipeline; and the output pipeline is also provided with a second valve, and the Tesla valve is provided on one side or both sides where the second valve is connected to the output pipeline.

8. The semiconductor device according to claim 6, wherein: A plurality of Tesla valves are arranged at intervals on the input pipeline and the output pipeline respectively.

9. The semiconductor device according to claim 6, wherein: The outer surface of at least a portion of the input pipeline is sheathed with a heating belt, and the heating belt has a first end and a second end opposite to each other, and the Tesla valve is arranged at the first end and / or the second end corresponding to the position on the input pipeline.

10. The semiconductor device according to claim 9, characterized in that When the number of the heating belts is greater than or equal to 2, the Tesla valve is arranged between adjacent heating belts.

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