Semiconductor device

Abstract

The utility model provides a semiconductor device. The semiconductor device includes: a plurality of semiconductor chips; and a connection member electrically connected to the plurality of semiconductor chips, the connection member having: an external terminal; a plate-shaped part which is connected with the external terminal; a first connection part group connected to the plate-shaped part and including one or a plurality of connection parts electrically connected to the plurality of semiconductor chips; and a second connection part group including one or more connection parts provided farther from the external terminal than the first connection part group, the plate-shaped part including: a first plate thickness region connected to the first connection part group and having a predetermined first thickness; and a second plate thickness region that is connected to the second connection part group and has a second thickness that is thicker than the first thickness.

Description

Technical Field

[0001] The utility model relates to a semiconductor device. Background Art

[0002] Patent Document 1 describes a “semiconductor device that suppresses fluctuation in resistance value of a current path”.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2019 / 230292

[0006] Patent Document 2: International Publication No. 2021 / 002132

[0007] Patent Document 3: Japanese Patent Application Publication No. 2006-203974

[0008] Patent Document 4: Japanese Patent Application Publication No. 2022-162191

[0009] Patent Document 5: Japanese Patent Application Publication No. 2021-64674 Utility Model Content

[0010] In the present utility model, a semiconductor device is provided, comprising: a plurality of semiconductor chips; and a connecting component, which electrically connects the plurality of semiconductor chips, the connecting component having: an external terminal; a plate-like portion, which is connected to the external terminal; a first connecting portion group, which is connected to the plate-like portion and includes one or more connecting portions for electrically connecting the plurality of semiconductor chips; and a second connecting portion group, which includes one or more connecting portions arranged farther away from the external terminal than the first connecting portion group, the plate-like portion including: a first plate thickness region, which is connected to the first connecting portion and has a predetermined first thickness; and a second plate thickness region, which is connected to the second connecting portion and has a second thickness thicker than the first thickness.

[0011] In any of the semiconductor devices described above, the plate-shaped portion may include a first metal plate and a second metal plate joined to the first metal plate. The first plate thickness region may be a region formed by the first metal plate. The second plate thickness region may be a region formed by joining the first metal plate to the second metal plate.

[0012] In any of the above-mentioned semiconductor devices, the first metal plate and the second metal plate may be joined by solder.

[0013] In any of the above-mentioned semiconductor devices, the first metal plate and the second metal plate may be bonded with a sintered material.

[0014] In any of the above-mentioned semiconductor devices, the first metal plate and the second metal plate may be joined by welding.

[0015] In any of the above semiconductor devices, the first metal plate and the second metal plate may be formed of the same material.

[0016] In any of the above semiconductor devices, the second thickness may be 1.5 times or more and 3.5 times or less of the first thickness.

[0017] In any of the above semiconductor devices, the second thickness may be twice the first thickness.

[0018] In any of the semiconductor devices described above, the first connection portion group and the second connection portion group may be arranged in a predetermined first direction. One end of a boundary between the first plate thickness region and the second plate thickness region may be located between two connection portions sandwiching the center of the plate-shaped portion in the first direction.

[0019] In any of the above-mentioned semiconductor devices, the number of the connection portions included in the first connection portion group may be equal to the number of the connection portions included in the second connection portion group.

[0020] In any of the above-mentioned semiconductor devices, a boundary between the first thickness region and the second thickness region may be in contact with a first farthest terminal farthest from the external terminal among the one or more connection portions included in the first connection portion group.

[0021] In any of the semiconductor devices described above, the plate-shaped portion may include a third plate-thickness region having a third thickness that is thicker than the second thickness.

[0022] In any of the semiconductor devices described above, the connection member may include a third connection portion group including one or more connection portions disposed farther from the external terminal than the second connection portion group. The third plate thickness region may be connected to the third connection portion group.

[0023] It should be noted that the above utility model does not list all the technical features of the utility model. In addition, sub-combinations of these features can also constitute inventions. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1A An example of a perspective view of the semiconductor device 100 is shown.

[0025] Figure 1B An example of a top view of the semiconductor device 100 is shown.

[0026] Figure 2A An example of a plan view of the connection member 30 is shown.

[0027] Figure 2B Show Figure 2A An example of the a-a' cross section.

[0028] Figure 3 A plan view showing a modified example of the connecting member 30 is shown.

[0029] Figure 4A A plan view showing a modified example of the connecting member 30 is shown.

[0030] Figure 4B Show Figure 4A An example of the b-b' cross section.

[0031] Figure 5A A plan view showing a modified example of the connecting member 30 is shown.

[0032] Figure 5B Show Figure 5A An example of the c-c' cross section.

[0033] Explanation of symbols

[0034] 20…Insulating plate, 22…Output terminal, 24…Positive terminal, 26…Negative terminal, 30…Connecting member, 32…Connecting portion, 34…Plate portion, 36…External terminal, 40…Semiconductor chip, 42…Transistor portion, 44…Diode portion, 50…Gate terminal, 52…Gate connecting portion, 60…Emitter terminal, 62…Emitter connecting portion, 66…Auxiliary collector terminal, 68…Auxiliary collector connecting portion, 70…External output terminal, 72…External positive terminal, 74…External negative terminal, 80…Temperature sensing terminal , 82…temperature sensing connection portion, 84…temperature sensing portion, 100…semiconductor device, 110…housing portion, 112…cut-in portion, 114…terminal configuration surface, 116…convex portion, 120…base portion, 322…first connection portion group, 324…first connection portion, 326…second connection portion group, 328…second connection portion, 330…third connection portion group, 340…first plate thickness region, 342…second plate thickness region, 344…third plate thickness region, 350…first metal plate, 352…second metal plate, 354…third metal plate. DETAILED DESCRIPTION

[0035] Although the present invention is described below by way of the embodiments of the utility model, the following embodiments do not limit the invention of the utility model claims. In addition, all combinations of features described in the embodiments are not necessarily required for the technical solution of the utility model.

[0036] In this specification, technical matters are sometimes described using orthogonal coordinate axes of X, Y, and Z. In this specification, a plane parallel to the upper surface of a semiconductor chip is defined as an XY plane, and a depth direction of a semiconductor substrate of a semiconductor chip is defined as a Z axis.

[0037] In this specification, the term "same" or "equal" includes a case where there is an error due to manufacturing variation, etc. The error is within 10%, for example.

[0038] Figure 1A An example of a three-dimensional view of a semiconductor device 100 is shown. The semiconductor device 100 includes a housing 110, a base 120, and a plurality of terminals. The semiconductor device 100 can function as a power conversion device such as an inverter or a converter. The semiconductor device 100 can accommodate a semiconductor chip 40 and the like therein. The semiconductor device 100 includes a plurality of semiconductor chips 40. The semiconductor chip 40 will be described later.

[0039] The housing 110 accommodates the plurality of semiconductor chips 40 and the like included in the semiconductor device 100. The housing 110 is molded of insulating resin. The housing 110 is provided on the base 120. The housing 110 is provided with a cutout portion 112 for ensuring insulation.

[0040] The base portion 120 is fixed to the case portion 110 by screws or the like. The case portion 110 may be provided with a hole for fixing the base portion 120. The base portion 120 may be set to a ground potential. The base portion 120 has a main surface in the XY plane.

[0041] The terminal arrangement surface 114 is a surface on which a plurality of terminals are arranged on the upper surface side of the housing 110. The gate terminal 50, the emitter terminal 60, the auxiliary collector terminal 66, and the temperature sensing terminal 80 can be arranged on the terminal arrangement surface 114. The terminal arrangement surface 114 has a convex portion 116 in the Z-axis direction.

[0042] The convex portion 116 is provided near the center of the terminal configuration surface 114. The convex portion 116 is provided to extend in the longitudinal direction (in this example, the X-axis direction) of the terminal configuration surface 114. The external output terminal 70, the external positive terminal 72, and the external negative terminal 74 are provided on the convex portion 116. The external output terminal 70, the external positive terminal 72, and the external negative terminal 74 can form a current path for a large current flowing in a power device such as an IGBT. In a plan view, the area of ​​the external output terminal 70, the external positive terminal 72, and the external negative terminal 74 provided on the convex portion 116 can be larger than the area of ​​the gate terminal 50, the emitter terminal 60, the auxiliary collector terminal 66, and the temperature sensing terminal 80 provided on the terminal configuration surface 114. The external output terminal 70, the external positive terminal 72, and the external negative terminal 74 are examples of the external terminal 36 of the connection member 30. The connection member 30 and the external terminal 36 will be described later.

[0043] The external output terminal 70 is an AC output terminal. The external positive terminal 72 is a positive terminal of a DC power source. The external negative terminal 74 is a negative terminal of a DC power source. Each terminal can be electrically connected to a corresponding terminal of a plurality of semiconductor chips 40 included in the semiconductor device 100 .

[0044] The gate terminal 50 is a gate terminal for supplying a gate voltage of a transistor unit 42 described later. The emitter terminal 60 outputs the emitter voltage of the transistor unit 42. The auxiliary collector terminal 66 outputs the collector voltage of the transistor unit 42. The temperature sensing terminal 80 is a terminal for a thermistor connected to a thermistor embedded in the housing 110 and detecting the internal temperature of the housing 110.

[0045] Figure 1B An example of a top view of the semiconductor device 100 is shown. Figure 1B The example of arrangement of the circuit provided on the base portion 120 in the housing portion 110 is shown. The semiconductor device 100 of this example is a two-level power converter. The semiconductor device 100 may be a three-level power converter or other devices.

[0046] The semiconductor device 100 includes one or more insulating plates 20 on the base portion 120. The semiconductor device 100 of this example includes six insulating plates 20 on the base portion 120. In this example, the six insulating plates 20 are arranged on the base portion 120 in a row in the X-axis direction.

[0047] A plurality of semiconductor chips 40 and a plurality of wiring patterns may be arranged on the insulating plate 20. The plurality of semiconductor chips 40 may have a transistor portion 42 and a diode portion 44. The transistor portion 42 and the diode portion 44 may be connected by a wiring pattern and / or a wire member, etc., to form a power conversion circuit. The circuits formed by the plurality of semiconductor chips 40 arranged on each insulating plate 20 may be the same.

[0048] The insulating plate 20 is bonded to the base 120. The insulating plate 20 may have conductive patterns on both sides of a ceramic substrate (eg, alumina) having good thermal conductivity. For example, the insulating plate 20 is a DCB (Direct Copper Bond) substrate in which a copper circuit board is directly bonded to a ceramic substrate.

[0049] The insulating plates 20 may be connected in parallel via the connection member 30. By forming the same circuit on the insulating plates 20 and connecting the insulating plates 20 in parallel via the connection member 30, the rated current of the semiconductor device 100 can be increased.

[0050] The base portion 120 may be provided with a gate connection portion 52, an emitter connection portion 62, an auxiliary collector connection portion 68, and a temperature sensing connection portion 82. Each connection portion may be a circuit pattern provided on the base portion 120. Each connection portion is connected to each terminal provided on the housing portion 110. The gate connection portion 52 is connected to the gate terminal 50. The emitter connection portion 62 is connected to the emitter terminal 60. The auxiliary collector connection portion 68 is connected to the auxiliary collector terminal 66. The temperature sensing connection portion 82 is connected to the temperature sensing terminal 80.

[0051] The temperature sensing connection portion 82 may be connected to a temperature sensing portion 84. As an example, the temperature sensing portion 84 is a thermistor.

[0052] The connection component 30 is electrically connected to the plurality of semiconductor chips 40. The connection component 30 may be formed of a conductive material such as a metal. For example, the material of the connection component 30 may be aluminum or copper. The connection component 30 may have one or more connection portions 32 and a plate-like portion 34. The one or more connection portions 32 are electrically connected to the plurality of semiconductor chips 40. The connection component 30 has a main surface in the XZ plane.

[0053] Each insulating plate 20 may include an output terminal 22, a positive electrode terminal 24, and a negative electrode terminal 26. Each terminal may be electrically connected to a corresponding external terminal.

[0054] The output terminal 22 may be connected to the plate-shaped portion 34 via the connection portion 32. The plate-shaped portion 34 to which the output terminal 22 is connected may be connected to the external output terminal 70 at the upper portion in the housing portion 110. In this case, the external terminal 36 of the connection member 30 is the external output terminal 70.

[0055] The positive terminal 24 can be connected to the plate-shaped portion 34 via the connection portion 32. The plate-shaped portion 34 connected with the positive terminal 24 can be connected to the external positive terminal 72 at the upper portion in the case portion 110. In this case, the external terminal 36 of the connection member 30 is the external positive terminal 72.

[0056] The negative terminal 26 can be connected to the plate portion 34 via the connection portion 32. The plate portion 34 connected with the negative terminal 26 can be connected to the external negative terminal 74 at the upper portion in the case portion 110. In this case, the external terminal 36 of the connection member 30 is the external negative terminal 74.

[0057] Figure 2A FIG. 2 shows an example of a top view of the connection component 30. The connection component 30 includes a plurality of connection portions 32, a plate-shaped portion 34, and an external terminal 36. It should be noted that the connection portion 32 is simplified in this figure. Figure 1B As shown, the connection portion 32 can be bent to be connected to each insulating plate 20 .

[0058] The external terminal 36 is a terminal provided to be exposed outside the housing portion 110 of the semiconductor device 100. The external terminal 36 may be an external output terminal 70, an external positive terminal 72, or an external negative terminal 74. That is, the connection member 30 of this example may be electrically connected to the output terminal 22 of each insulating plate 20, may be electrically connected to the positive terminal 24 of each insulating plate 20, or may be electrically connected to the negative terminal 26 of each insulating plate 20.

[0059] The plate-like portion 34 is connected to the external terminal 36. The connection between the plate-like portion 34 and the external terminal 36 may be a state where the plate-like portion 34 and the external terminal 36 are physically combined. The plate-like portion 34 and the external terminal 36 may be formed integrally. By forming the plate-like portion 34 and the external terminal 36 integrally, the plate-like portion 34 may be connected to the external terminal 36.

[0060] The plate-like portion 34 includes a first plate thickness region 340 and a second plate thickness region 342. The first plate thickness region 340 may have a predetermined first thickness. The second plate thickness region 342 may have a second thickness thicker than the first thickness. The second thickness may be greater than 1.5 times and less than 3.5 times the first thickness. As an example, the second thickness is twice the first thickness. Here, the thickness of the plate-like portion 34 may be the length in a direction orthogonal to the main surface of the plate-like portion 34. The plate-like portion 34 of this example has a main surface in the XZ plane, so the thickness of the plate-like portion 34 may be the length in the Y-axis direction.

[0061] The thickness of the external terminal 36 may be the same as the first thickness of the first plate thickness region 340, or may be different from the second thickness of the second plate thickness region 342. When the thickness of the external terminal 36 is the same as the first thickness of the first plate thickness region 340, the first plate thickness region 340 is formed integrally with the external terminal 36, so that the plate-shaped portion 34 can be connected to the external terminal 36.

[0062] The connection part 32 is connected to the plate-shaped part 34. The connection between the connection part 32 and the plate-shaped part 34 may be a state where the connection part 32 and the plate-shaped part 34 are physically combined. The connection part 32 and the plate-shaped part 34 may be formed integrally. By forming the connection part 32 and the plate-shaped part 34 integrally, the connection part 32 can be connected to the plate-shaped part 34.

[0063] The connection component 30 of this example has six connection parts 32. The number of connection parts 32 of the connection component 30 is not limited thereto. The connection component 30 may have five or less connection parts 32, or may have seven or more connection parts 32. For example, the connection component 30 may have three connection parts 32, or may have four connection parts 32, or may have eight connection parts 32. In this case, three insulating plates 20 may be connected in parallel through the connection component 30, or four insulating plates 20 may be connected in parallel through the connection component 30, or eight insulating plates 20 may be connected in parallel through the connection component 30.

[0064] The connection member 30 has a first connection portion group 322 and a second connection portion group 326. The first connection portion group 322 includes one or more first connection portions 324. The second connection portion group 326 is disposed farther from the external terminal 36 than the first connection portion group 322. The first plate thickness region 340 may be connected to the first connection portion group 322. The second plate thickness region 342 may be connected to the second connection portion group 326.

[0065] The thickness of the connecting portion 32 may be the same as the first thickness of the first plate thickness region 340, or may be different from the second thickness of the second plate thickness region 342. That is, the thickness of any one of the one or more first connecting portions 324 included in the first connecting portion group 322 connected to the first plate thickness region 340 and the one or more second connecting portions 328 included in the second connecting portion group 326 connected to the second plate thickness region 342 may be the same as the first thickness of the first plate thickness region 340.

[0066] The external terminal 36 of this example is provided at the end portion on the negative side in the X-axis direction of the plate-shaped portion 34. The first plate thickness region 340 is provided at a position closer to the negative side in the X-axis direction than the second plate thickness region 342. In this way, the second connection portion group 326 connected to the second plate thickness region 342 can be provided at a position farther from the external terminal 36 than the first connection portion group 322 connected to the first plate thickness region 340.

[0067] When current flows between the external terminal 36 and each of the plurality of connection portions 32, the length of the current path between the external terminal 36 and each of the plurality of connection portions 32 is different. As a result, the inductance components of the current paths between the external terminal 36 and each of the plurality of connection portions 32 are different, and thus, there is a case where the impedance of each current path is unbalanced. The unbalanced impedance of each current path causes current imbalance, which causes spikes and / or transients during switching operations, and the semiconductor device 100 may be damaged.

[0068] In the semiconductor device 100 of this example, the second thickness of the second plate thickness region 342 can be thicker than the first thickness of the first plate thickness region 340, and the second connection portion group 326 connected to the second plate thickness region 342 can be arranged farther away from the external terminal 36 than the first connection portion group 322 connected to the first plate thickness region 340. That is, the inductance component of the current path between the external terminal 36 and the second connection portion group 326 is larger than the inductance component of the current path between the external terminal 36 and the first connection portion group 322, and the resistance component of the current path between the external terminal 36 and the second connection portion group 326 is smaller than the resistance component of the current path between the external terminal 36 and the first connection portion group 322. The semiconductor device 100 of this example eliminates the difference in inductance component by the difference in resistance component, thereby suppressing the imbalance of impedance of each current path. Furthermore, the semiconductor device 100 of this example can prevent the damage of the semiconductor device 100 by suppressing the current imbalance and suppressing the generation of spikes and / or transients during switching.

[0069] Sometimes, by providing a slit or the like in the connection member 30, the length of the current path between the external terminal 36 and the first connection member group 322 is lengthened, thereby increasing the inductance component of the current path, thereby suppressing the imbalance of the inductance component of the current path between the external terminal 36 and the second connection member group 326. In this case, since the parasitic impedance increases due to the increase in the length of the current path, the surge voltage may increase when the switching speed of the semiconductor device 100 is increased. The semiconductor device 100 of this example can suppress the increase of the surge voltage when the switching speed of the semiconductor device 100 is increased, compared with the case where the length of the current path is lengthened by providing a slit or the like in the connection member 30. However, the imbalance of impedance can also be suppressed by adjusting both the resistance component and the inductance component by adjusting the plate thickness and adjusting the current path based on the configuration of the slit or the like.

[0070] The first connection part group 322 of this example includes three connection parts 32. The number of connection parts 32 included in the first connection part group 322 is not limited thereto. The second connection part group 326 of this example includes three connection parts 32. The number of connection parts 32 included in the second connection part group 326 is not limited thereto.

[0071] Since the lengths of the current paths between the first connection parts 324 included in the first connection part group 322 and the external terminal 36 are different, the impedance imbalance of each current path may occur. The impedance imbalance of the current path between each first connection part 324 included in the first connection part group 322 and the external terminal 36 may be smaller than the impedance imbalance of the current path between each of the first connection part group 322 and the second connection part group 326 and the external terminal 36. Similarly, the impedance imbalance of the current path between each second connection part 328 included in the second connection part group 326 and the external terminal 36 may be smaller than the impedance imbalance of the current path between each of the first connection part group 322 and the second connection part group 326 and the external terminal 36. That is, for the semiconductor device 100, since the impedance imbalance of the current path between each of the first connection part group 322 and the second connection part group 326 and the external terminal 36 is suppressed, the overall impedance imbalance can be suppressed.

[0072] The first connection portion group 322 and the second connection portion group 326 may be arranged in a predetermined first direction. The first connection portion group 322 and the second connection portion group 326 of this example are arranged in the X-axis direction. One end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 may be located between two connection portions 32 sandwiching the center CL of the plate-shaped portion 34 in the first direction. One end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 of this example may be located between the first connection portion 324c and the second connection portion 328a sandwiching the center CL of the plate-shaped portion 34 in the X-axis direction. That is, the semiconductor device 100 of this example suppresses the imbalance of the impedance of the current path between the first connection portion group 322 and the second connection portion group 326 and the external terminal 36 by adjusting the resistance component of the current path between the second connection portion group 326 and the external terminal 36, and the second connection portion group 326 is arranged at a position farther from the external terminal 36 than the center CL of the plate-shaped portion 34 in the X-axis direction.

[0073] The boundary between the first plate thickness region 340 and the second plate thickness region 342 may be connected to the first farthest terminal farthest from the external terminal 36 among one or more connection parts 32 included in the first connection part group 322. One end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 in this example is connected to the first connection part 324c, which is the first farthest terminal farthest from the external terminal 36 among the connection parts 32 included in the first connection part group 322. By connecting one end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 in this example to the first farthest terminal, the resistance component of the current path between the second connection part group 326 and the external terminal 36 can be effectively reduced, and the second connection part group 326 is arranged at a position farther from the external terminal 36 than the first farthest terminal.

[0074] The other end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 may be located below the external terminal 36. However, the position of the other end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 is not limited thereto. The position of the other end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 may also be separated from the external terminal 36. That is, as long as the second plate thickness region 342 is arranged at a position that reduces the resistance component of the current path between the second connection portion 328 and the external terminal 36 and suppresses the imbalance of impedance, its arrangement is not limited.

[0075] The number of connection parts 32 included in the first connection part group 322 and the number of connection parts 32 included in the second connection part group 326 can be equal. Since the first connection part group 322 of this example includes three connection parts 32 and the second connection part group 326 of this example includes three connection parts 32, the number of connection parts 32 included in each connection part group is equal. However, the number of connection parts 32 included in each connection part group may also be unequal. The number of connection parts 32 included in each connection part group can be designed in a manner that can suppress the imbalance of impedance. That is, the number of second connection parts 328 connected to the second plate thickness zone 342 for reducing the resistance component can be determined based on the number of connection parts 32 where the imbalance of impedance becomes larger when the second plate thickness zone 342 is not provided.

[0076] The external terminal 36 of this example is provided at the end of the negative side of the plate-like portion 34 in the X-axis direction. The position where the external terminal 36 is provided is not limited thereto. The external terminal 36 may be provided near the center CL of the plate-like portion 34, or may be provided at the end of the positive side of the plate-like portion 34 in the X-axis direction. In the case where the position of the external terminal 36 is different, the position where the second plate thickness region 342 is provided may be different. That is, the second plate thickness region 342 may be configured at such a position that the resistance component of the current path between the connection portion 32 provided at a position farther away from the external terminal 36 than other connection portions 32 and the external terminal 36 is reduced, and the impedance imbalance is suppressed.

[0077] Figure 2B Show Figure 2A An example of the a-a' cross section in FIG. The plate-shaped portion 34 of this example includes a first metal plate 350 and a second metal plate 352. The first metal plate 350 and the second metal plate 352 can be made of metal. For example, the material of the first metal plate 350 and the second metal plate 352 can be aluminum or copper. The first metal plate 350 and the second metal plate 352 can be made of the same material.

[0078] The second metal plate 352 may be joined to the first metal plate 350. The first metal plate 350 and the second metal plate 352 may be joined by a method capable of conducting electricity. For example, the first metal plate 350 and the second metal plate 352 may be joined using solder, may be joined using a sintered material, or may be joined by welding.

[0079] The first plate thickness region 340 may be a region formed by the first metal plate 350. That is, the first thickness TR1 of the first plate thickness region 340 may be the thickness TM1 of the first metal plate 350. The second plate thickness region 342 may be a region obtained by joining the first metal plate 350 and the second metal plate 352. That is, the second thickness TR2 of the second plate thickness region 342 may be the sum of the thickness TM1 of the first metal plate 350 and the thickness TM2 of the second metal plate 352. Thus, the second thickness TR2 is thicker than the first thickness TR1.

[0080] The thickness TM1 of the first metal plate 350 and the thickness TM2 of the second metal plate 352 may be the same or different. As described above, the second thickness TR2 may be greater than 1.5 times and less than 3.5 times the first thickness TR1. That is, the thickness TM2 of the second metal plate 352 may be greater than 0.5 times and less than 2.5 times the thickness TM1 of the first metal plate 350. As an example, when the thickness TM1 of the first metal plate 350 and the thickness TM2 of the second metal plate 352 are the same, the second thickness TR2 is twice the first thickness TR1.

[0081] The semiconductor device 100 of this example can reduce the resistance component of the current path through the second plate thickness region 342 and suppress impedance imbalance by joining the first metal plate 350 and the second metal plate 352 using a conductive method. The second plate thickness region 342 is the region obtained by joining the first metal plate 350 and the second metal plate 352.

[0082] The second metal plate 352 of this example is bonded to the negative side of the Y-axis direction relative to the first metal plate 350. The bonding direction of the second metal plate 352 is not limited thereto. The second metal plate 352 may be bonded to the positive side of the Y-axis direction relative to the first metal plate 350.

[0083] The external terminal 36 and the connection portion 32 may be formed integrally with the first metal plate 350. That is, after the metal plate forming the first metal plate 350 is cut out to form the external terminal 36, the plate-shaped portion 34, and the connection portion 32, the second metal plate 352 may be joined to the first metal plate 350 in a region to be the second plate thickness region 342, thereby forming the connection member 30. In this way, the thickness of any one of the external terminal 36, the one or more first connection portions 324 included in the first connection portion group 322 connected to the first plate thickness region 340, and the one or more second connection portions 328 included in the second connection portion group 326 connected to the second plate thickness region 342 may be the same as the first thickness TR1 of the first plate thickness region 340.

[0084] Figure 3 A top view of a modified example of the connecting member 30 is shown. Figure 2A The difference of the embodiment is that one end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 is located at the center CL of the first direction (in this example, the X axis) of the plate-shaped portion 34. Figure 2A Even in this example, by positioning one end of the boundary between the first plate thickness zone 340 and the second plate thickness zone 342 between the two connecting portions 32 sandwiching the center CL of the plate-shaped portion 34 in the first direction, the resistance component of the current path passing through the second plate thickness zone 342 can be reduced and the imbalance of impedance can be suppressed.

[0085] Figure 4A A top view of a modified example of the connecting member 30 is shown. Figure 2A and Figure 3 The difference between the embodiments is that the external terminal 36 is arranged near the center of the plate-shaped portion 34 in the first direction, the second plate thickness area 342 is arranged at both ends of the plate-shaped portion 34, and the number of the plurality of connecting portions 32 is different. Figure 2A and / or Figure 3 The same as the embodiment.

[0086] The connection member 30 of this example has three connection portions 32. In this case, the three insulating plates 20 can be connected in parallel by the connection member 30.

[0087] The external terminal 36 of this example is arranged near the center in the first direction of the plate-shaped portion 34. In this way, the position of the external terminal 36 can be changed according to the position exposed to the outside of the housing portion 110 of the semiconductor device 100.

[0088] The first connection portion 324 of this example is arranged near the center of the plate-shaped portion 34 in the first direction, and the second connection portion 328 is arranged near both ends of the plate-shaped portion 34. Therefore, the second connection portion 328 is arranged farther away from the external terminal 36 than the first connection portion 324. Even in this example, by connecting the first plate thickness region 340 to the first connection portion 324 and connecting the second plate thickness region 342 to the second connection portion 328, it is possible to suppress the imbalance of the impedance of the current path between each of the first connection portion 324 and the second connection portion 328 and the external terminal 36.

[0089] In this example, one end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 is located near the middle of the first direction between the first connecting portion 324 and the second connecting portion 328. The other end of the boundary between the first plate thickness region 340 and the second plate thickness region 342 may be located below the external terminal 36. However, as long as the second plate thickness region 342 is provided at a position that reduces the resistance component of the current path between the second connecting portion 328 and the external terminal 36 and suppresses the imbalance of impedance, its configuration is not limited.

[0090] Figure 4B Show Figure 4A The second metal plate 352 of this example is joined to the positive side of the first metal plate 350 in the Y-axis direction.

[0091] The second metal plate 352 may include a plurality of second metal plates 352 according to the number of the second plate thickness regions 342. The second metal plate 352 in this example includes two second metal plates 352.

[0092] Figure 5A A top view of a modified example of the connecting member 30 is shown. Figure 2A The difference of the embodiment is that the plate-shaped portion 34 includes a third plate thickness region 344. Figure 2A The same as the embodiment.

[0093] The third plate thickness region 344 may have a third thickness thicker than the second thickness. The third thickness may be greater than 2 times and less than 6 times the first thickness. As an example, the third thickness is 3 times the first thickness.

[0094] The connection part 30 may have a third connection part group 330, and the third connection part group 330 includes one or more connection parts 32 arranged farther away from the external terminal 36 than the second connection part group 326. The third connection part group 330 of this example includes one connection part 32. The third plate thickness area 344 may be connected to the third connection part group 330. Thus, the semiconductor device 100 of this example can suppress the imbalance of impedance of the current path between the first connection part group 322, the second connection part group 326, and the third connection part group 330 and the external terminal 36. In particular, the third plate thickness area 344 may be provided in the case where the imbalance of impedance based only on the second plate thickness area 342 is not sufficiently suppressed. In this way, the connection part 30 may include a plurality of plate thickness areas, and the imbalance of impedance between the current paths may be suppressed by adjusting the thickness of each of the plurality of plate thickness areas.

[0095] Figure 5B Show Figure 5A The plate-like portion 34 of this example includes a third metal plate 354. The third metal plate 354 can be made of metal. For example, the material of the third metal plate 354 can be aluminum or copper. The third metal plate 354 can be made of the same material as the first metal plate 350 and the second metal plate 352.

[0096] The third metal plate 354 may be joined to the first metal plate 350 or the second metal plate 352. In this example, the third metal plate 354 is joined to the second metal plate 352. As another example, the second metal plate 352 may be joined to the first metal plate 350 on the negative side in the Y-axis direction, and the third metal plate 354 may be joined to the first metal plate 350 on the positive side in the Y-axis direction.

[0097] The third metal plate 354 and the first metal plate 350 or the second metal plate 352 may be joined by a conductive method. For example, the third metal plate 354 and the first metal plate 350 or the second metal plate 352 may be joined by solder, sintered material, or welding.

[0098] The third plate thickness region 344 may be a region where the first metal plate 350 is joined to the second metal plate 352 and the third metal plate 354. The thickness TR3 of the third plate thickness region 344 may be the sum of the thickness TM1 of the first metal plate 350, the thickness TM2 of the second metal plate 352, and the thickness TM3 of the third metal plate 354. Thus, the third thickness TR3 may be greater than the second thickness TR2.

[0099] The thickness TM3 of the third metal plate 354 may be the same as the thickness TM1 of the first metal plate 350 and / or the thickness TM2 of the second metal plate 352, or may be different from the thickness TM1 of the first metal plate 350 and / or the thickness TM2 of the second metal plate 352. The thickness TM3 of the third metal plate 354 may be greater than or equal to 0.5 times and less than or equal to 2.5 times the thickness TM1 of the first metal plate 350. For example, if the thickness TM1 of the first metal plate 350 is the same as the thickness TM2 of the second metal plate 352 and the thickness TM3 of the third metal plate 354, the third thickness TR3 may be three times the first thickness TR1.

[0100] The semiconductor device 100 of this example can reduce the resistance component of the current path through the third plate thickness region 344 and suppress impedance imbalance by utilizing a conductive method to join the third metal plate 354 to the first metal plate 350 or the second metal plate 352. The third plate thickness region 344 is the region obtained by joining the first metal plate 350, the second metal plate 352 and the third metal plate 354.

[0101] The external terminal 36 and the connection portion 32 may be formed integrally with the first metal plate 350. That is, after the metal plate forming the first metal plate 350 is cut out to form the external terminal 36, the plate-shaped portion 34, and the connection portion 32, the second metal plate 352 may be joined to the first metal plate 350 in a region to become the second plate thickness region 342, and the third metal plate 354 may be joined to the first metal plate 350 or the second metal plate 352 in a region to become the third plate thickness region 344, thereby forming the connection member 30. In this way, the thickness of any one of the external terminal 36, the one or more connection portions 32 included in the first connection portion group 322 connected to the first plate thickness region 340, the one or more connection portions 32 included in the second connection portion group 326 connected to the second plate thickness region 342, and the one or more connection portions 32 included in the third connection portion group 330 connected to the third plate thickness region 344 may be the same as the first thickness TR1 of the first plate thickness region 340.

[0102] The present invention has been described above using embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the description of the utility model claims that such changes or improvements can also be included in the technical scope of the present invention.

[0103] The execution order of each process such as actions, sequences, steps and stages in the apparatus, system, program and method shown in the claims, specifications and drawings of the utility model can be implemented in any order unless it is specifically stated that "before" or "earlier than", and in addition, as long as the result of the previous process is not used in the subsequent process. Regarding the action flow in the claims, specifications and drawings of the utility model, although "first" or "next" is used for convenience, it does not mean that it must be implemented in this order.

Claims

1. A semiconductor device, characterized in that: have: a plurality of semiconductor chips; and a connecting member electrically connected to the plurality of semiconductor chips, The connecting component has: external terminals; a plate-shaped portion connected to the external terminal; a first connection portion group connected to the plate-shaped portion and including one or more connection portions for electrically connecting to the plurality of semiconductor chips; as well as a second connection portion group including one or more connection portions disposed farther away from the external terminal than the first connection portion group, The plate-shaped portion comprises: a first plate thickness region connected to the first connecting portion group and having a predetermined first thickness; as well as A second plate thickness region is connected to the second connection portion group and has a second thickness thicker than the first thickness.

2. The semiconductor device according to claim 1, wherein: The plate-shaped portion comprises: a first metal plate; and a second metal plate joined to the first metal plate, The first plate thickness region is a region consisting of the first metal plate, The second plate thickness region is a region where the first metal plate and the second metal plate are joined.

3. The semiconductor device according to claim 2, wherein: The first metal plate and the second metal plate are joined with solder.

4. The semiconductor device according to claim 2, wherein: The first metal plate and the second metal plate are joined with a sintered material.

5. The semiconductor device according to claim 2, wherein: The first metal plate and the second metal plate are joined by welding.

6. The semiconductor device according to claim 2, wherein: The first metal plate and the second metal plate are made of the same material.

7. The semiconductor device according to any one of claims 1 to 6, characterized in that The second thickness is not less than 1.5 times and not more than 3.5 times the first thickness.

8. The semiconductor device according to claim 7, wherein: The second thickness is twice the first thickness.

9. The semiconductor device according to any one of claims 1 to 6, characterized in that The first connection portion group and the second connection portion group are arranged in a predetermined first direction, One end of a boundary between the first plate thickness region and the second plate thickness region is located between two connecting portions sandwiching the center of the plate-shaped portion in the first direction.

10. The semiconductor device according to any one of claims 1 to 6, characterized in that The number of the connection parts included in the first connection part group is equal to the number of the connection parts included in the second connection part group.

11. The semiconductor device according to any one of claims 1 to 6, characterized in that A boundary between the first plate thickness region and the second plate thickness region is connected to a first farthest terminal farthest from the external terminal among the one or more connection portions included in the first connection portion group.

12. The semiconductor device according to any one of claims 1 to 6, characterized in that The plate-shaped portion includes a third plate-thickness region having a third thickness that is thicker than the second thickness.

13. The semiconductor device according to claim 12, wherein: The connecting member has a third connecting portion group, the third connecting portion group including one or more connecting portions arranged farther away from the external terminal than the second connecting portion group. The third plate thickness region is connected to the third connection portion group.

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