Novel SiO preparation and purification device

CN222901071UActive Publication Date: 2025-05-27HUBEI SINOPHORUS ELECTRONIC MATERIALS CO LTD
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Patent Information

Application Number
CN202421993858.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-08-16
Publication Date
2025-05-27
Estimated Expiration
2034-08-16

AI Technical Summary

Technical Problem

Traditional SiO preparation devices are complex, have high energy consumption and uncontrollable crystal form, resulting in low yield and high cost of SiO.

Method used

A new SiO preparation and purification device is designed, including a rotary tube furnace, an argon system, a material deposition furnace, a filter and a vacuum pump. The material is heated through a rotary tube furnace, and the argon gas brings out SiO vapor, which is deposited at the rear and extracted by a vacuum pump to achieve SiO purification.

Benefits of technology

The SiO preparation and purification process is simplified, with low energy consumption and reduced cost. It can be widely used in the preparation of precursors of silicon-based anode materials, and the prepared nano-SiO materials have high purity.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to a novel SiO preparation and purification device. The front end of the rotary tube furnace is connected with the argon system, the rear end of the rotary tube furnace is sequentially connected with the material deposition furnace, the filter and the vacuum pump, the argon system is formed by connecting an argon cylinder, a pressure reducing valve and a gas flow meter through pipelines, and a resistance wire is arranged in the material deposition furnace and used for heating. And the material deposition furnace and the water circulation thermostat form a loop through a pipeline for cooling the material deposition furnace. The furnace tube of the tubular furnace continuously rotates during heating, so that materials are in full contact, the reaction rate is increased, material agglomeration during sintering is reduced, the escape rate of silicon monoxide is greatly improved, argon is introduced into the front part of the tubular furnace, the vacuum pump is arranged at the rear part of the tubular furnace for vacuumizing, the argon brings out SiO steam, and the SiO steam is cooled and settled in the material deposition furnace, so that the material deposition rate is greatly improved. SiO in different forms can be obtained, and the prepared nano SiO material is high in purity and low in production cost.
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Description

Technical Field

[0001] The utility model belongs to the field of preparation and purification of silicon-based anode material precursors for lithium-ion batteries, and particularly relates to a device for the preparation and purification of SiO. Background Art

[0002] Lithium-ion batteries are widely used in consumer products such as mobile phones and laptop computers, and fields such as electric vehicles. At present, the anode material of lithium-ion batteries is mainly graphite, and its actual specific capacity has approached the theoretical specific capacity of 372 mAh / g. The theoretical specific capacity of SiO reaches 2600 mAh / g, and it has a smaller expansion effect than the same silicon-based anode, elemental silicon. It has a broader application prospect in the field of lithium-ion battery anode materials.

[0003] At present, the traditional device for preparing SiO is relatively complex, consumes a high amount of energy, and the crystal form of the prepared SiO is uncontrollable, resulting in a low yield of SiO and an increase in cost. Due to many technical problems, it is urgent to find a reasonable process route and device. Summary of the Utility Model

[0004] In order to solve the above problems, the utility model aims to provide a new device for the preparation and purification of SiO. The device greatly simplifies the process of preparing and purifying SiO, has low energy consumption, further reduces costs, and can be widely applied to the preparation of silicon-based anode material precursors.

[0005] The technical solution of the utility model is as follows:

[0006] A new device for the preparation and purification of SiO, the device includes a rotary tube furnace, the front end of the rotary tube furnace is connected to an argon gas system, and the rear end is successively connected to a material deposition furnace, a filter, and a vacuum pump. The argon gas system is composed of an argon gas cylinder, a pressure reducing valve, and a gas flow meter connected by pipelines. The inside of the material deposition furnace is provided with a resistance wire for heating, and the material deposition furnace forms a loop with a water circulation constant temperature mechanism through a pipeline for cooling the material deposition furnace.

[0007] In a preferred solution, corundum tubes are provided in the internal heating area of the rotary tube furnace, the outer shell is made of cold-rolled steel plate, and several first temperature sensors are provided in the rotary tube furnace.

[0008] In a preferred solution, the vacuum pump is a two-stage rotary vane vacuum pump.

[0009] In a preferred solution, the rotary tube furnace and the material deposition furnace are connected by magnetic fluid sealing, and a pressure gauge is provided between the rotary tube furnace and the material deposition furnace.

[0010] In a preferred solution, the rotary tube furnace is provided with a cooling water inlet and a cooling water outlet, and a second temperature sensor is also provided on the rotary tube furnace.

[0011] In a preferred embodiment, the pipes and filters in the device are made of stainless steel.

[0012] The beneficial effects of the present utility model are as follows:

[0013] The furnace tubes of the tube furnace rotate continuously during heating, enabling the materials to come into full contact with each other. This not only increases the reaction rate but also reduces the agglomeration of the materials during sintering, greatly improving the escape rate of silicon monoxide. By setting up an argon system, argon is introduced at the front of the tube furnace, and a vacuum pump is set at the rear to evacuate the air. The argon carries out SiO vapor, which cools and settles in the material deposition furnace. The temperature of the deposition furnace can be changed by heating with resistance wires or introducing cooling water to obtain SiO in different forms. This device is easy to transform and upgrade, has strong R & D properties, the prepared nano-SiO material has high purity, and the production cost is low. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present utility model will be further described below in conjunction with the drawings and embodiments:

[0015] Figure 1 It is a schematic diagram of the overall structure of the present utility model;

[0016] In the figure: argon gas cylinder 1, pressure reducing valve 2, gas flow meter 3, rotating tube furnace 4, first temperature sensor 5, corundum tube 6, pressure gauge 7, cooling water outlet 8, second temperature sensor 9, water circulation constant temperature machine 10, cooling water inlet 11, material deposition furnace 12, filter 13, vacuum pump 14. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the specific embodiments and drawings of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0018] Embodiment 1

[0019] See Figure 1 , a preparation and purification device for a new type of SiO, the device includes a rotating tube furnace 4, the front end of the rotating tube furnace 4 is connected to an argon system, and the rear end is sequentially connected to a material deposition furnace 12, a filter 13, and a vacuum pump 14. The argon system is composed of an argon gas cylinder 1, a pressure reducing valve 2, and a gas flow meter 3 connected by pipes to control the gas flow. The inside of the material deposition furnace 12 is provided with resistance wires for heating, and the material deposition furnace 12 forms a loop with a water circulation constant temperature machine 10 through pipes for cooling the material deposition furnace 12.

[0020] In a preferred embodiment, corundum tubes 6 are provided in the internal heating area of the rotary tube furnace 4, the outer shell is made of cold-rolled steel plate, and a number of first temperature sensors 5 are provided in the rotary tube furnace 4.

[0021] In a preferred embodiment, the vacuum pump 14 is a two-stage rotary vane vacuum pump.

[0022] In a preferred embodiment, the rotary tube furnace 4 and the material deposition furnace 12 are connected by a magnetohydrodynamic seal, and a pressure gauge 7 is provided between the rotary tube furnace 4 and the material deposition furnace 12.

[0023] In a preferred embodiment, the rotary tube furnace 4 is provided with a cooling water inlet 11 and a cooling water outlet 8, and a second temperature sensor 9 is also provided on the rotary tube furnace 4.

[0024] In a preferred embodiment, the pipes and the filter 13 in the device are made of stainless steel.

[0025] The rotary tube furnace 4 is used to heat the material. The material is restricted in the heating area of the furnace tube by a pipe plug with a hole in the middle. After SiO is vaporized at high temperature, it is carried by argon into the subsequent material deposition furnace. A temperature sensor 5 is provided on the furnace tube and is interlocked with the heating system to control the furnace tube temperature; the rotary tube furnace 4 is connected to the rear material deposition furnace through a magnetohydrodynamic seal. A pressure sensor 7 is installed on the pipeline to monitor the system pressure in real time. The magnetohydrodynamic seal enables the corundum tube 6 of the rotary tube furnace 4 to rotate stably while ensuring the system seal. The outer side of the material deposition furnace uses cold-rolled steel plate, and the inner side uses 2520 stainless steel. The inner side is polished to facilitate the subsequent removal of SiO. The resistance wire can be used to heat up the furnace and can also cool down by introducing cooling water into the furnace cover through a water circulation thermostat. An internal temperature sensor is provided, and the temperature of the inner deposition chamber can be controlled by controlling the cooling water flow or the heating power of the resistance wire, and the temperature control range can be achieved between 5°C and 800°C to help obtain SiO products in different forms; the rear of the material deposition furnace is connected to the vacuum pump 14 through a 304 stainless steel pipeline, and a stainless steel filter is installed on the pipeline to filter SiO powder to prevent damage to the vacuum pump.

[0026] The gas flowmeter is a rotameter with a range of 0 - 10 L / min.

[0027] The corundum tube 6 is made of 99% high-purity corundum, and the long-term service temperature is below 1600°C.

[0028] The magnetohydrodynamic seal can ensure the seal even when the furnace tube can rotate.

[0029] The stainless steel filter 13 can effectively filter more than 95% of the particles larger than 10 microns.

[0030] The technical solution of the present utility model is explained by the above embodiments, but the present utility model is not limited to the above embodiments, that is, it does not mean that the present utility model must rely on the above specific embodiments to be implemented. Any improvements made by those skilled in the art on the basis of the present utility model, or equivalent replacements of the materials selected for the present utility model, etc., all fall within the protection scope of the patent.

Claims

1. A novel SiO preparation and purification device, comprising a rotary tube furnace (4), characterized in that: The front end of the rotary tube furnace (4) is connected to an argon system, and the rear end is connected to a material deposition furnace (12), a filter (13), and a vacuum pump (14) in sequence. The argon system is composed of an argon gas cylinder (1), a pressure reducing valve (2), and a gas flow meter (3) connected by a pipeline. A resistance wire is provided inside the material deposition furnace (12) for heating. The material deposition furnace (12) forms a loop with a water circulation thermostat (10) through a pipeline for cooling the material deposition furnace (12).

2. The novel SiO preparation and purification device according to claim 1, characterized in that: The internal heating area of ​​the rotary tube furnace (4) is provided with a corundum tube (6), the outer shell is a cold-rolled steel plate, and a plurality of first temperature sensors (5) are provided in the rotary tube furnace (4).

3. The novel SiO preparation and purification device according to claim 1 is characterized in that: The vacuum pump (14) is a two-stage rotary vane vacuum pump.

4. The novel SiO preparation and purification device according to claim 1 is characterized in that: The rotary tube furnace (4) and the material deposition furnace (12) are connected via a magnetic fluid seal, and a pressure gauge (7) is provided between the rotary tube furnace (4) and the material deposition furnace (12).

5. The novel SiO preparation and purification device according to claim 1 is characterized in that: The rotary tube furnace (4) is provided with a cooling water inlet (11) and a cooling water outlet (8), and the rotary tube furnace (4) is also provided with a second temperature sensor (9).

6. The novel SiO preparation and purification device according to claim 1, characterized in that: The pipes and filters (13) in the device are made of stainless steel.